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Journal articles on the topic 'Silicon passive components'

Author: Grafiati

Published: 31 May 2025

Last updated: 31 July 2025

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1

Liu, Kai, YongTaek Lee, HyunTai Kim, et al. "Passive Device Integration from Silicon Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (2010): 001967–89. http://dx.doi.org/10.4071/2010dpc-wp36.

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Passive components are indispensible parts used in electronics circuits for various functions, such decoupling, biasing, resonating, filtering, matching, transforming, etc. These passive components can be made on chips, or in PCBs, or in SMDs. SOC (system-on-chip) solutions where all passives are implemented may be long-term goals, but suffer high cost and long development cycle times at the time being. Making passive components embedded inside laminate substrates is limited on passive density. SMD solutions are by far the most popular approaches in the industry, and may still be dominant for

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2

Fainman, Yeshaiahu, D. Tan, S. Zamek, et al. "Passive and Active Nanophotonics." Advances in Science and Technology 82 (September 2012): 9–18. http://dx.doi.org/10.4028/www.scientific.net/ast.82.9.

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Dense photonic integration requires miniaturization of materials, devices and subsystems, including passive components (e.g., engineered composite metamaterials, filters, etc.) and active components (e.g., lasers, modulators, detectors). This paper discusses passive and active devices that recently have been demonstrated in our laboratory, including monolithically integrated short pulse compressor utilized with silicon on insulator material platform and design, fabrication and testing of nanolasers constructed using metal-dielectric-semiconductor resonators confined in all three dimensions.

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3

Pantellini, Alessio, Claudio Lanzieri, Antonio Nanni, et al. "GaN-on-Silicon Evaluation for High-Power MMIC Applications." Materials Science Forum 711 (January 2012): 223–27. http://dx.doi.org/10.4028/www.scientific.net/msf.711.223.

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Today microwave market has identified GaN-HEMT technology as a strategic enabling technology for next generation MMICs to be implemented in high performance RF sub-assemblies such as T/R Modules, Solid State Power Transmitters, Compact Receivers, High Speed Communications. To allow commercial market entry of GaN technology, a tradeoff between high RF performance and low cost is mandatory and a possible solution is represented by GaN-on-Silicon substrate. In this scenario the evaluation of FETs RF performance and losses of passive components are demanding to understand the feasibility of GaN MM

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Grzybowski, R. R., and B. Gingrich. "High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications." Journal of Engineering for Gas Turbines and Power 121, no. 4 (1999): 622–28. http://dx.doi.org/10.1115/1.2818517.

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Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging, and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capaci

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Soref, Richard. "Silicon-based silicon–germanium–tin heterostructure photonics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (2014): 20130113. http://dx.doi.org/10.1098/rsta.2013.0113.

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The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

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Kyranas, Aristides, and Yannis Papananos. "Passive On-Chip Components for Fully Integrated Silicon RF VCOs." Active and Passive Electronic Components 25, no. 1 (2002): 83–95. http://dx.doi.org/10.1080/08827510211281.

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7

Mccourt, Martin. "Status of Glass and Silicon-Based Technologies for Passive Components." European Transactions on Telecommunications 4, no. 6 (1993): 685–89. http://dx.doi.org/10.1002/ett.4460040618.

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8

Bunel, Catherine, Stephane Bellenger, Sebastien Leruez, Lionel Lenoir, and Franck Murray. "Low Profile Silicon Interposer using Passive Integration (PICS)." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 001918–48. http://dx.doi.org/10.4071/2011dpc-wp41.

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Thanks to their 3D structure, the Silicon Capacitors offer drastic improvements in terms of performances compared to the commonly used ceramic and tantalum capacitors. They are also a smart way to reduce the application volume and increase the IP protection level. With the increasing complexity in the die and package designs and ever increasing cost pressure in today's microelectronic industry, IPDIA is offering for a large range of products, customized or standard components, a low cost packaging solution: the Wafer Level Chip Scale Packaging. While wire-bond interface may remain the preferen

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Capelle, Marie, Jérome Billoué, Patrick Poveda, and Gael Gautier. "Study of porous silicon substrates for the monolithic integration of radiofrequency circuits." International Journal of Microwave and Wireless Technologies 6, no. 1 (2013): 39–43. http://dx.doi.org/10.1017/s1759078713001050.

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The silicon/porous silicon (PS) hybrid substrate is an interesting candidate for the monolithic integration of radiofrequency (RF) circuits. Thus, passive components can be integrated on the insulating PS regions close to the active devices integrated on silicon. Regarding silicon, hybrid substrates allow the improvement of RF circuits performances. To demonstrate it, coplanar waveguides have been integrated on glass, silicon, and localized PS substrates. The characterization results show that the substrate losses are reduced with PS.

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Wu, Marcelo, Zhanghua Han, and Vien Van. "Conductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale." Optics Express 18, no. 11 (2010): 11728. http://dx.doi.org/10.1364/oe.18.011728.

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11

Ziaie, Babak, and Khalil Najafi. "A generic micromachined silicon platform for high-performance RF passive components." Journal of Micromechanics and Microengineering 10, no. 3 (2000): 365–71. http://dx.doi.org/10.1088/0960-1317/10/3/310.

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12

Elsobky, Mourad, Golzar Alavi, Björn Albrecht, et al. "Ultra-Thin Sensor Systems Integrating Silicon Chips with On-Foil Passive and Active Components." Proceedings 2, no. 13 (2018): 748. http://dx.doi.org/10.3390/proceedings2130748.

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Hybrid System-in-Foil exploits the complementary benefits of integrating embedded silicon chips with on-foil passive and active electronic components. In this work, the design, fabrication and characterization of three on-foil components, namely a humidity sensor, near field communication antenna and organic thin-film transistors, are investigated.

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Liu, Kai, YongTaek Lee, HyunTai Kim, and MaPhooPwint Hlaing. "Mobile Device Passive Integration from Wafer Process." International Symposium on Microelectronics 2011, no. 1 (2011): 000878–86. http://dx.doi.org/10.4071/isom-2011-tha1-paper1.

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In this paper, we present some passive components made from silicon substrate technology (Integrated Passive Device process) and integration schemes using these components for RF applications. RF decoupling capacitors from this process are characterized on ESR and ESL performance. Functional blocks (filters, baluns, diplexers, matching, etc) made from the IPD process, have shown good electrical performance with small form-factor features. The thin profiles from the IPDs make them very suitable to be used inside laminate and QFN packages. System-in-Packages or multiple-chip-modules using IPD ap

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Gaborieau, Sophie, Catherine Bunel, and Franck Murray. "3D Passive Integrated Capacitors Towards Even Higher Integration." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (2010): 001907–30. http://dx.doi.org/10.4071/2010dpc-wp32.

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IPDIA is involved in Silicon based 3D-IPD advanced technology. This very flexible technology is using standard processing techniques to integrate passive components such as inductors, resistors or capacitors into a silicon substrate. 3D high-density capacitor is at the forefront of IPDIA development program. First process generation with 25nF/mm2 and second generation reaching 80nF/mm2 have been in production for several years. The third generation with multiple metal-insulator-metal (MIM) layer stacks in the pores is reaching 250nF/mm2 and is being qualified now. Intrinsic low parasitic eleme

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15

Lelit, Marcin, Mateusz Słowikowski, Maciej Filipiak, et al. "Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform." Materials 15, no. 4 (2022): 1398. http://dx.doi.org/10.3390/ma15041398.

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The fabrication processes for silicon nitride photonic integrated circuits evolved from microelectronics components technology—basic processes have common roots and can be executed using the same type of equipment. In comparison to that of electronics components, passive photonic structures require fewer manufacturing steps and fabricated elements have larger critical dimensions. In this work, we present and discuss our first results on design and development of fundamental building blocks for silicon nitride integrated photonic platform. The scope of the work covers the full design and manufa

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16

Solberg, Vern. "Design and Process Implementation for Embedding Components." International Symposium on Microelectronics 2011, no. 1 (2011): 000279–85. http://dx.doi.org/10.4071/isom-2011-tp3-paper1.

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Although the printed circuit has traditionally served as the platform for mounting and interconnecting active and passive components on the outer surfaces, companies attempting to improve product functionality and minimize space are now considering embedding a broad range of these components within the circuit structure. Both uncased active and passive component elements are candidates for embedding but the decision to embed components within the multilayer circuit structure must be made early in the design process. Some components are easy candidates for integrating into the substrate while o

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17

Amanti, Francesco, Greta Andrini, Fabrizio Armani, et al. "Integrated Photonic Passive Building Blocks on Silicon-On-Insulator Platform." Photonics 11, no. 6 (2024): 494. http://dx.doi.org/10.3390/photonics11060494.

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Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few ’building blocks’ which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design

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18

Herrault, Florian, M. Yajima, M. Chen, C. McGuire, and A. Margomenos. "Silicon-Embedded RF Micro-Inductors for Ultra-Compact RF Subsystems." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (2015): 000939–57. http://dx.doi.org/10.4071/2015dpc-tp44.

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Advances in 2.5D and 3D integration technologies are enabling ultra-compact multi-chip modules. In this abstract, we present the design, fabrication, and experimental characterization of RF inductors microfabricated inside deep silicon recesses. Because silicon is often used as a substrate of packaging material for 3D integration and microelectromechanical systems (MEMS), developing microfabrication technologies to embed passive components in the unused volume of the silicon package is a promising approach to realize ultra-compact RF subsystems. Inductors and capacitors are critical in dc-bias

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19

AZUMA, Naoya, and Makoto NAGATA. "Equivalent Circuit Representation of Silicon Substrate Coupling of Passive and Active RF Components." IEICE Transactions on Electronics E96.C, no. 6 (2013): 875–83. http://dx.doi.org/10.1587/transele.e96.c.875.

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20

Friedrichs, Peter, and Reinhold Bayerer. "SiC High Power Devices – Challenges for Assembly and Thermal Management." Materials Science Forum 740-742 (January 2013): 869–72. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.869.

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Silicon carbide power devices are intended and to enter new application regimes in power electronics, in fact, they are enabling components mainly if higher switching frequencies in power electronics are considered. This trend can be clearly observed since power density can be increased and efforts towards passive components and other mechanical contributions to the system can be reduced. However, this trend imposes new challenges towards the surrounding of the chips in form of the package itself and the whole system around. Stray components like inductances and impedance elements become cruci

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21

Cretu, B., A. Tahiat, R. Coq Germanicus, et al. "Low Frequency Noise Spectroscopy: A Powerful Diagnostic Tool for Trap Identification in Active and Passive Components." EDFA Technical Articles 27, no. 1 (2025): 8–17. https://doi.org/10.31399/asm.edfa.2025-1.p008.

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Abstract Low-frequency noise spectroscopy is a promising characterization technique for nanoscale devices and failure analysis investigations. This article describes and shows how low-frequency noise spectroscopy can be applied to identify stable traps induced by proton irradiations on silicon passive devices. The work focuses on traps located in the depleted region of the semiconductor material of already studied nanoscale transistor technologies.

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22

Yoon, Hong-Sun, Min-Soo Park, Jong-Min Yook, Dongsu Kim, and Youngcheol Park. "Compact Asymmetrical Quasi-MMIC Doherty Power Amplifier." Journal of Electromagnetic Engineering and Science 23, no. 4 (2023): 381–83. http://dx.doi.org/10.26866/jees.2023.4.l.15.

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This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs and several passive components implemented on a silicon (Si) substrate. In order to achieve size and cost advantages, passive components such as a power divider, input matching networks, output matching networks, and a Doherty combiner are realized using Si-integrated passive device (Si-IPD) technology, which costs about 40% of the budget for the entire GaN MMIC process. For the 3.5 GHz pulsed-cont

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23

Loncarski, Jelena, Hussain A. Hussain, and Alberto Bellini. "Efficiency, Cost, and Volume Comparison of SiC-Based and IGBT-Based Full-Scale Converter in PMSG Wind Turbine." Electronics 12, no. 2 (2023): 385. http://dx.doi.org/10.3390/electronics12020385.

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Power electronics, as an enabling technology in most renewable energy systems, is gaining attention as the penetration of renewable energy sources increases. Wide-bandgap power electronics are of particular interest due to their superior voltage blocking capabilities and fast switching speeds. They can viably be considered in the renewable energy sources, especially as the penetration of wind energy is expected to increase by a great extent in the upcoming years. In this paper, a comparison of Silicon Carbide-based and Silicon-based wind energy conversion systems has been performed, as it is c

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24

Prashant, Meenakshi, Seung Wook Yoon, GeunSik Kim, Kai Liu, and Flynn Carson. "Advanced SiP Packaging Technologies of IPD for Mobile Applications." Journal of Microelectronics and Electronic Packaging 7, no. 4 (2010): 223–27. http://dx.doi.org/10.4071/imaps.267.

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Integrated passive device (IPD) technology was originally developed as a way to replace bulky discrete passive components, but it is now gaining popularity in ESD/EMI protection applications, as well as in RF, high-brightness LED silicon submounts, and digital and mixed-signal devices. IPD is a device realized by resistors, inductors, capacitors, filters, and so on, for electrical functions such as matching and transforming, among others. Passive devices essentially optimize overall device performance. The key benefits offered by IPDs, as compared with LTCC and laminate-embedded passive device

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25

Buttay, Cyril, Remi Robutel, Christian Martin, et al. "Effect of High Temperature Ageing on Active and Passive Power Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (2010): 000228–35. http://dx.doi.org/10.4071/hitec-rrobutel-wa24.

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The power devices needed to build a high-temperature converter (inductors, capacitors and active devices) have been stored at 200°C for up to 1000 hrs. Their characteristics have been monitored. Capacitors and magnetic materials from various manufacturers and technologies are tested, as well as silicon-carbide diodes. It is shown that by carefully choosing the components, it is possible to build a reliable power converter operating at high temperature.

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Xie, Jingya, Wangcheng Ye, Linjie Zhou, et al. "A Review on Terahertz Technologies Accelerated by Silicon Photonics." Nanomaterials 11, no. 7 (2021): 1646. http://dx.doi.org/10.3390/nano11071646.

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In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication

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27

Gostimirovic, Dusan, and Richard Soref. "An Integrated Optical Circuit Architecture for Inverse-Designed Silicon Photonic Components." Sensors 23, no. 2 (2023): 626. http://dx.doi.org/10.3390/s23020626.

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In this work, we demonstrate a compact toolkit of inverse-designed, topologically optimized silicon photonic devices that are arranged in a “plug-and-play” fashion to realize many different photonic integrated circuits, both passive and active, each with a small footprint. The silicon-on-insulator 1550-nm toolkit contains a 2 × 2 3-dB splitter/combiner, a 2 × 2 waveguide crossover, and a 2 × 2 all-forward add–drop resonator. The resonator can become a 2 × 2 electro-optical crossbar switch by means of the thermo-optical effect, phase-change cladding, or free-carrier injection. For each of the t

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28

Yun, Young, and Se-Ho Kim. "A Development of Ultra-compact Passive Components Employing Periodic Ground Structure for Silicon RFIC." Journal of the Korean Society of Marine Engineering 33, no. 4 (2009): 562–68. http://dx.doi.org/10.5916/jkosme.2009.33.4.562.

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29

Soref, R., та J. Larenzo. "All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm". IEEE Journal of Quantum Electronics 22, № 6 (1986): 873–79. http://dx.doi.org/10.1109/jqe.1986.1073057.

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30

Beal, Aubrey N., John Tatarchuk, Colin Stevens, Thomas Baginski, Michael Hamilton, and Robert N. Dean. "Design Considerations and Ring-down Characteristics of Micromachined, High Current Density Capacitors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (2014): 001380–406. http://dx.doi.org/10.4071/2014dpc-wa32.

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The need for integrated passive components which meet the stringent power system requirements imposed by increased data rates, signal path density and challenging power distribution network topologies in integrated systems yield diverse motivations for high density, miniaturized capacitors capable of quickly sourcing large quantities of current. These diverse motivations have led to the realization of high density capacitor structures through the means of several technologies. These structures have been evaluated as high-speed, energy storage devices and their respective fabrication technologi

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31

Majeed, Bivragh, Lei Zhang, Giuseppe Fiorentino, et al. "Silicon microfluidics: An enabling technology for life sciences application." International Symposium on Microelectronics 2017, no. 1 (2017): 000188–93. http://dx.doi.org/10.4071/isom-2017-wa21_155.

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Abstract In this paper we review the silicon microfabrication process that has been developed for various life science applications over the last several years. Silicon microfabrication is a key enabling technology in the developing personalized point of care or point of need systems. Silicon microfabrication allows for accurate control of fine features and it can combine active and passive components within a single chip. It is also very reliable, repeatable and it benefits from cost reduction due to mass production capabilities Depending on the application, we have fabricated devices with ei

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Zhang, Sen, Wei Du, Wenjie Chen, et al. "Self-adaptive passive temperature management for silicon chips based on near-field thermal radiation." Journal of Applied Physics 132, no. 22 (2022): 223104. http://dx.doi.org/10.1063/5.0121043.

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Temperature management in modern instruments is often a great task, particularly for silicon chip technologies against the background of the ever-increasing demanding for larger scale and higher density electronics integration. Enormous efforts have been made to solve this long-pending issue, mostly relying on active equipment that consume more energy and more space. Here, a compact thermal management technique for silicon chips is proposed, which is able to passively maintain the operation temperature of targets within a wide range of input power. The core part is a self-adaptive near-field t

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Xu, Fujia, Shujing Su, Lili Zhang, and Ting Ren. "Design and Research of Wireless Passive High-Temperature Sensor Based on SIW Resonance." Micromachines 13, no. 7 (2022): 1035. http://dx.doi.org/10.3390/mi13071035.

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The temperature of advanced components in aviation and aerospace fields is difficult to obtain timely. In this study, we aimed to investigate microwave backscattering technology combined with the theory of substrate integrated waveguide and resonant cavity to design a wireless passive temperature sensor and explore its potential in this field. We employed silicon carbide and aluminum ceramic as the substrate to make sensors. The interrogation antenna was designed to test the sensor, which could completely cover the working frequency of the sensor and had good radiation characteristics. Based o

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Charlet, Barbara, B. Charlet, L. Di Cioccio, et al. "Hetero-Structure Integration using an Atmospheric Plasma Treatment for Surface Preparation before its Interconnection." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 000817–35. http://dx.doi.org/10.4071/2011dpc-tp15.

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One of the open challenges, related to the heterogeneous devices stacking, is its surface preparation, in order to assure the optimal electrical connections, and finally achieve the high performance structures having the stacked chips and passive components. Several techniques, using dry or wet process, allow the surface activation and preparation before the successive vertical interconnection achievement. We report the implementation of an environment friendly method, developed for chips and passive circuits surface preparation before its interconnection. This method is based on the use of at

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Holm, Johan, Henrik Åhlfeldt, Magnus Svensson, and Christian Vieider. "Through-etched silicon carriers for passive alignment of optical fibers to surface-active optoelectronic components." Sensors and Actuators A: Physical 82, no. 1-3 (2000): 245–48. http://dx.doi.org/10.1016/s0924-4247(99)00339-8.

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Park, Yun-Mook, Jun-Kyu Lee, Byung-Jin Park, Byeung-Gee Kim, Jung-Won Lee, and In-Soo Kang. "Development on Silicon module with Cu-filled TSV and Integrated Passive Devices." International Symposium on Microelectronics 2010, no. 1 (2010): 000385–91. http://dx.doi.org/10.4071/isom-2010-wa1-paper6.

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In recent years, market demands on more functionality, smaller form factor and higher speed is becoming strong increasingly. In order to come up with those, many new technologies are emerging in the market. Among them, TSV and IPD are key enabling technology to meet market demands because TSV interconnection can provide wider bandwidth and high transmission speed due to vertical one compared to wire bonding technology and IPD can provide higher performance, more area saving to be assembled and small form factor compared to discrete passive components. In this work, we have developed the silico

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Patil, Amita, Xiao An Fu, Philip G. Neudeck, Glenn M. Beheim, Mehran Mehregany, and Steven Garverick. "Silicon Carbide Differential Amplifiers for High-Temperature Sensing." Materials Science Forum 600-603 (September 2008): 1083–86. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1083.

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This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased sensors operating in harsh environments. More specifically, differential amplifiers were constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passive components. A three-stage voltage amplifier has a differential voltage gain of ~50 dB and a gainbandwidth of ~200 kHz at 450oC, as limited by test parasitics. Such an amplifier could be used to amplify the signals produced by a piezoresistive Wheatstone bridge sensor, for example. Design considerations for 6H-SiC JFET transimpe

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Wei, Zhaopeng, Gilles Jacquemod, Yves Leduc, Emeric de Foucauld, Jerome Prouvee, and Benjamin Blampey. "Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits." Active and Passive Electronic Components 2019 (July 4, 2019): 1–9. http://dx.doi.org/10.1155/2019/4578501.

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Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to implement longer transistor, especially for analog cell. In this paper, we propose a new topology using some advantages of the FDSOI (Fully Depleted Silicon on Insulator) technology in order to reduce the size of analog cells. First, a current mirror was chosen to illustrate and validate a new design. Measured currents, with 35nm transistor length, have validated our new cross-coupled back-gate topology. Then, a VCRO (Voltage Controlled Ring Osc

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Bicer, Mahmut, Stefano Valle, Jacob Brown, Martin Kuball, and Krishna C. Balram. "Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices." Applied Physics Letters 120, no. 24 (2022): 243502. http://dx.doi.org/10.1063/5.0082467.

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Strong transverse confinement of high-frequency sound and low-loss routing in on-chip waveguides will bring new degrees of freedom to manipulate GHz frequency acoustic waves, analogous to the change brought forth by silicon integrated photonics to the routing and manipulation of light on a chip. Here, we demonstrate that high frequency (>3 GHz) sound can be efficiently guided in μm-scale gallium nitride (GaN) waveguides and ring resonators by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifi

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Baca Arroyo, Roberto. "Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities." Advances in Condensed Matter Physics 2018 (September 12, 2018): 1–10. http://dx.doi.org/10.1155/2018/4237686.

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The dynamical behavior of impurities into the silicon junction transistor has been studied using an empirical methodology to investigate its behavior knowing only the physical parameters of materials together with practical behavior of their passive components. The operating modes suggested with equations governing circuit performance are derived considering transient analysis. The relationship between material properties and equivalent circuit is discussed from a physical viewpoint. Theoretical solution of the equations yields a graphical response as approximation of the experimental results

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Chakravarthy, B. K., and G. Sree Lakshmi. "Power Savings with all SiC Inverter in Electric Traction applications." E3S Web of Conferences 87 (2019): 01014. http://dx.doi.org/10.1051/e3sconf/20198701014.

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The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and smaller passive components which result in higher power density. SiC devices have higher blocking voltages, lower on-state resistance and switching losses and higher thermal conductivity and operating temperatures. SiC devices can operate at higher voltages, higher frequencies and higher junction temperatures than comparable Si devices, which results in significant reduction in weight and size of the power converter and increase in system efficiency.

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Adamo, Cristina B., Alexander Flacker, Wilson Freitas, Ricardo C. Teixeira, Michele O. Da Silva, and Antonio L. Rotondaro. "Multi-Chip Module (MCM-D) Using Thin Film Technology." Journal of Integrated Circuits and Systems 10, no. 1 (2015): 21–29. http://dx.doi.org/10.29292/jics.v10i1.401.

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Multi-chip Module (MCM) is a technology that can be applied to silicon and alumina modules allowing advantages in the integration complexity. This paper reports a MCM-D (D for deposition) technology suitable to fabricate passive components using two metal levels and non-photosensitive polymer benzocyclobutene as dielectric. The devices are produced using thin film technology, vacuum metallization, electroless and electrolytic deposition, photolithography process and wet etching. Electrical measurements and focused ion beam (FIB) were used to evaluate the characteristics of the MCM-D structures

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Luo, F., and M. Ul Hassan. "Review of cryogenic power conversion and its potential in future all electric transportation systems: from silicon age to WBG era." IOP Conference Series: Materials Science and Engineering 1302, no. 1 (2024): 012018. http://dx.doi.org/10.1088/1757-899x/1302/1/012018.

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Abstract Cryogenic power electronic conversion (< 123 K) is expected to offer higher efficiencies for future all-electric transportation platforms. Low temperature operation of converters together with integration of wide bandgap devices (WBG) can enable higher switching frequencies with reduced filtering components. This paper briefly reviews the passive components involved in the development of a cryogenic converter. The paper also reviews in detail the converter development with WBG devices by far, and provides a discussion on benefits achieved, and challenges in terms of auxiliary compo

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Pares, G., J. P. Michel, E. Deschaseaux, et al. "INDUCTORS USING 2.5D SILICON INTERPOSER WITH THICK RDL AND TSV-LAST TECHNOLOGIES." International Symposium on Microelectronics 2017, no. 1 (2017): 000072–77. http://dx.doi.org/10.4071/isom-2017-tp32_061.

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Abstract Silicon interposers represents an interesting alternatives to organic packages for the fabrication of complex System In Package (SIP) modules especially for RF application. Among the advantages of this technology are the capability to fabricate fine-pitch redistribution layers and also to embed high quality passive components inside the interposer. This allows the passive components to be very close to the active chips resulting in highly integrated and high performance systems. To keep the technology at a reasonable cost these last add-on features need to be fabricated with no or min

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Walkowiak, Mariusz, Daniel Waszak, Błażej Gierczyk, and Grzegorz Schroeder. "Impact of selected supramolecular additives on the initial electrochemical lithium intercalation into graphite in propylene carbonate." Open Chemistry 6, no. 4 (2008): 600–606. http://dx.doi.org/10.2478/s11532-008-0058-8.

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AbstractImpact of silicon tripodand-type electrolyte additives and graphite pre-treatment agents on the electrochemical intercalation of lithium cations into graphite was investigated. Addition of Si-tripodand-type silanes to propylene carbonate-based electrolytes was found to suppress detrimental solvent co-intercalation and graphite exfoliation. Similar effects were observed for graphite pre-treated with the reported silane agents. It was observed that the presented supramolecular additives allow for the formation of effective passive layers on graphite during first charging, and thus can be

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Baca-Arroyo, Roberto. "Reconfiguration Using Bio-Inspired Conduction Mode of Field-Effect Transistors toward the Creation of Recyclable Devices." Electronics 12, no. 10 (2023): 2270. http://dx.doi.org/10.3390/electronics12102270.

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A bio-inspired conduction mode in silicon-based field-effect transistors was studied here using the frequency-dependent reconfiguration principle in a size-reduced circuit architecture. Analog circuits comprising neuromorphic and reconfigurable behavior were analyzed across their physical quantities using a set of equations governing circuit performance. Practical examples were built, analyzed, and discussed from a phenomenological viewpoint. Upon exploiting their reconfiguration properties when semiconductor devices and passive components are interconnected, novel operating principles might i

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Andersson, R., M. Bylund, V. Desmaris, et al. "Electrical Performance and Robustness of Ultrathin High-Density Carbon Nanofiber Capacitors on Silicon, Alumina and Glass Substrate Materials." International Symposium on Microelectronics 2020, no. 1 (2020): 000206–10. http://dx.doi.org/10.4071/2380-4505-2020.1.000206.

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AbstractWe demonstrate the feasibility of implementing carbon nano fiber based metal-insulator-metal (CNFMIM) capacitors on different substrates such as glass, alumina and silicon for use as integrated or discrete passive components on chips or interposers. The effects of biasing voltage and high operating temperatures on the performance of the devices are also investigated. Capacitance densities of 300 nF/mm2 are demonstrated on all substrates at a device thickness of only 5 μm. The manufactured capacitors feature ESR values at or below 100 mΩ, ESL below 15 pH and show little change in capaci

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Leduc, Philippe, Didier Magnon, and Fabrice Guitton. "Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme." Sultan Qaboos University Journal for Science [SQUJS] 7, no. 1 (2002): 71. http://dx.doi.org/10.24200/squjs.vol7iss1pp71-80.

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Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN) resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate"). The results show the unicity in most cases of the lumped element determ

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Farjana, Sadia, Mohamadamir Ghaderi, Sofia Rahiminejad, Sjoerd Haasl, and Peter Enoksson. "Dry Film Photoresist-Based Microfabrication: A New Method to Fabricate Millimeter-Wave Waveguide Components." Micromachines 12, no. 3 (2021): 260. http://dx.doi.org/10.3390/mi12030260.

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This paper presents a novel fabrication method based on dry film photoresists to realize waveguides and waveguide-based passive components operating at the millimeter-wave frequency (30–300 GHz). We demonstrate that the proposed fabrication method has a high potential as an alternative to other microfabrication technologies, such as silicon-based and SU8-based micromachining for realizing millimeter-wave waveguide components. Along with the nearly identical transfer of geometrical structures, the dry film photoresist offers other advantages such as fewer processing steps, lower production cost

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Yun, Y., Y. B. Park, and K. H. Park. "Short wavelength coplanar waveguide employing PAGS on silicon substrate for application to miniaturised passive components on RFIC." Electronics Letters 45, no. 5 (2009): 270. http://dx.doi.org/10.1049/el:20092742.

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