Relevant bibliographies by topics / Silicon power device

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Silicon power device'

Author: Grafiati
Published: 4 June 2025
Last updated: 1 August 2025

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Journal articles on the topic "Silicon power device"

1

Bakowski, Mietek. "Roadmap for SiC power devices." Journal of Telecommunications and Information Technology, no. 3-4 (December 30, 2000): 19–30. http://dx.doi.org/10.26636/jtit.2000.3-4.30.

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Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems. The challenges and prospects of SiC power device development are reviewed considering different device types. A close correlation between an exponential increase of current handling capability during recent five years and improvement in substrate quality is demonstrated. The voltage range of silicon and SiC unipolar and bipolar power devices with respect to the on-state voltage is determined based on device simulation. 4H-SiC unipolar de
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Muhamad, Faizal Yaakub, Amran Mohd Radzi Mohd, Hanim Mohd Noh Faridah, and Azri Maaspaliza. "Silicon carbide power device characteristics, applications and challenges: an overview." International Journal of Power Electronics and Drive System (IJPEDS) 11, no. 4 (2020): 2194–202. https://doi.org/10.11591/ijpeds.v11.i4.pp2194-2202.

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Silicon (Si) based power devices have been employed in most high power applications since decades ago. However, nowadays, most major applications demand higher efficiency and power density due to various reasons. The previously well-known Si devices, unfortunately, have reached their performance limitation to cover all those requirements. Therefore, Silicon Carbide (SiC) with its unique and astonishing characteristic has gained huge attention, particularly in the power electronics field. Comparing both, SiC presents a remarkable ability to enhance overall system performance and the transition
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Tsai, Hsin Luen. "Fabrication of Silicon Nanowires by Electroless Etching for Thermoelectric Application." Advanced Materials Research 652-654 (January 2013): 642–46. http://dx.doi.org/10.4028/www.scientific.net/amr.652-654.642.

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The fabrication procedure of silicon nanowire thermoelectric device has been developed based on the electroless etching method. Under a fixed etching solution concentration ratio and the etching reaction temperature, silicon nanowire arrays of different lengths manufactured at different etching time were investigated. The longer etching time results in the longer nanowire length. The silicon nanowire arrays were utilized to produce a silicon nanowire thermoelectric device. The I-V characteristics of the present SiNWs thermoelectric device were recorded under different heating temperatures, and
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Vobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.

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Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to
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Soelkner, Gerald, Winfried Kaindl, Michael Treu, and Dethard Peters. "Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure." Materials Science Forum 556-557 (September 2007): 851–56. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.851.

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Cosmic radiation has been identified as a decisive factor for power device reliability. Energetic neutrons create ionizing recoils within the semiconductor substrate which may lead to device burnout. While this failure mode has gained widespread acceptance for power devices based on silicon the question whether a similar mechanism could also lead to failure of SiC devices was left to be debated. Radiation hardness intrinsic to the SiC material was generally assumed but as experimental data was scarce reliability problems due to radiation-induced device failure could not be ruled out. Recent ac
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Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Transactions 109, no. 8 (2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.

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Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors, such as silicon carbide and gallium nitride, are likely candidates to replace silicon in the near future for high power applications as silicon is fast approaching its performance limits. Wide-bandgap power semiconductor devices enable breakthrough circuit performance and energy efficiency gains in a wide range of potential applications. The U.S. Department of Energ
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Kang, Haneul, Hyunji Kim, Sunghoon Im, Jinho Yang, and Sunchul Huh. "A Study on the Thermal Conductivity of Thermal Grease According to Cu-Ni Content." Key Engineering Materials 880 (March 2021): 71–76. http://dx.doi.org/10.4028/www.scientific.net/kem.880.71.

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An increase in power consumption density is related to the internal thermal characteristics of an electronic device, and the heat dissipation of the device is directly related to the high performance and miniaturization of the device. TIM (thermal interface material) with excellent internal heat dissipation performance are mainly used to improve the heat dissipation performance of electronic devices. Recently, the need for a high-efficiency TIM with high-performance thermal conductivity and low thermal contact resistance has increased. In this study, thermal grease was prepared by mixing Cu-Ni
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ELFORD, ANDREW, and PHILIP ANDREW MAWBY. "Emerging Silicon Carbide Power Device Technologies." Journal of Wide Bandgap Materials 7, no. 3 (2000): 179–91. http://dx.doi.org/10.1106/hx1n-dl9k-yk3x-uy54.

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Phlips, Bernard F., Karl D. Hobart, Francis J. Kub, et al. "Silicon Carbide Power Diodes as Radiation Detectors." Materials Science Forum 527-529 (October 2006): 1465–68. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1465.

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We have tested the radiation detection performance of Silicon Carbide (SiC) PIN diodes originally developed as high power diodes. These devices consist of 100 micron thick SiC grown epitaxially on SiC substrates. The size and thickness of the devices make them appropriate for a number of radiation detection applications. We tested 0.25 cm2 and 0.5 cm2 devices and obtained X-ray spectra under illumination with an Am-241 radioactive source. The spectra showed an energy resolution that was consistent with the resolution expected for the large capacitance of the device. Smaller devices with a diam
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Kitchen, Jennifer, Soroush Moallemi, and Sumit Bhardwaj. "Multi-chip module integration of Hybrid Silicon CMOS and GaN Technologies for RF Transceivers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (2019): 000339–82. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_010.

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Digital transceiver architectures offer the potential for achieving wireless hardware flexibility to frequency and modulation scheme for future-generation communications systems. Additionally, digital transmitters lend themselves to the use of switch-mode power amplifiers, which can have significantly higher efficiency than their linear counterparts. Two proposed architectures for realizing digital transmitters will be described in this work, both of which employ a hybrid combination of silicon integrated circuits (IC) and a power technology (e.g. GaN). This hybrid architecture takes advantage
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Dissertations / Theses on the topic "Silicon power device"

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Yang, Nanying. "Characterization and modeling of silicon and silicon carbide power devices." Diss., Virginia Tech, 2010. http://hdl.handle.net/10919/29643.

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Power devices play key roles in the power electronics applications. In order for the power electronics designers to fully utilize the performance advantages of power devices, compact power device models are needed in the circuit simulator (Saber, P-spice, etc.). Therefore, it is very important to get accurate device models. However, there are many challenges due to the development of new power devices with new internal structure and new semiconductor materials (SiC, GaN, etc.). In this dissertation, enhanced power diode model is presented with an improvement in the reverse blocking region. I
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Lee, Hyung-Seok. "High power bipolar junction transistors in silicon carbide." Licentiate thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3854.

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BHADRI, PRASHANT R. "IMPLEMENTATION OF A SILICON CONTROL CHIP FOR Si/SiC HYBRID OPTICALLY ACTIVATED HIGH POWER SWITCHING DEVICE." University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1021402169.

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Buono, Benedetto. "Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320.

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The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. However, in order to compete on the market, it is crucial to a have high current gain and a breakdown voltage close to ideal. Moreover, the absence of conductivity modulation and long-term stability has to be solved. In this thesis, these topics are investig
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Liu, Wei. "Electro-thermal simulations and measurements of silicon carbide power transistors." Doctoral thesis, Stockholm, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-86.

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Deshpande, Amol Rajendrakumar. "Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461238625.

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Lee, Hyung-Seok. "Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, Stockholm : Kungliga Tekniska högskolan, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4623.

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Bhadri, Prashant R. "Implementation of a silicon control chip for a Si/SiC hybrid optically activated high power switching device." Cincinnati, Ohio : University of Cincinnati, 2002. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1021402169.

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Chen, Zheng. "Electrical Integration of SiC Power Devices for High-Power-Density Applications." Diss., Virginia Tech, 2013. http://hdl.handle.net/10919/23923.

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The trend of electrification in transportation applications has led to the fast development of high-power-density power electronics converters. High-switching-frequency and high-temperature operations are the two key factors towards this target. Both requirements, however, are challenging the fundamental limit of silicon (Si) based devices. The emerging wide-bandgap, silicon carbide (SiC) power devices have become the promising solution to meet these requirements. With these advanced devices, the technology barrier has now moved to the compatible integration technology that can make the best o
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Lee, Sang Kwon. "Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3335.

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<p>Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. Among them,one of the most important and critical factors is the formationof low resistivity Ohmic contacts and high-temperature stableSchottky diodes on silicon carbide.</p><p>In this thesis, different metals (TiW, Ti, TiC, Al, and Ni)and different deposition techniques (sputtering andevaporation) were suggested and investigated for this purpose.Both electrical and mat
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Books on the topic "Silicon power device"

1

Singh, Ranbir, and B. Jayant Baliga. Cryogenic Operation of Silicon Power Devices. Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5751-7.

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Ranbir, Singh. Cryogenic operation of silicon power devices. Kluwer Academic Publishers, 1998.

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Chuan, Feng Zhe, ed. SiC power materials: Devices and applications. Springer, 2004.

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Fan, Ren, and Zolper J. C, eds. Wide energy bandgap electronic devices. World Scientific Pub., 2003.

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I, Haddad G., Mains R. K, and United States. National Aeronautics and Space Administration., eds. Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices. National Aeronautics and Space Administration, 1989.

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I, Haddad George, Mains R. K, and United States. National Aeronautics and Space Administration, eds. Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices. National Aeronautics and Space Administration, 1989.

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Silicon Carbide Power Devices. World Scientific Publishing Co Pte Ltd, 2006.

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Silicon Carbide Power Devices. World Scientific Publishing Co Pte Ltd, 2006.

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Silicon Carbide Power Devices. World Scientific Publishing Co Pte Ltd, 2006.

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Baliga, B. Jayant. Silicon Carbide Power Devices. World Scientific Pub Co Inc, 2006.

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Book chapters on the topic "Silicon power device"

1

Veliadis, Victor. "Silicon Carbide Power Device Fabrication." In Power Semiconductor Technology in Pulsed Power Applications. Springer Nature Switzerland, 2025. https://doi.org/10.1007/978-3-031-80252-2_4.

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Baliga, B. Jayant. "Silicon EST." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_10.

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Baliga, B. Jayant. "Silicon Thyristors." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_2.

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Baliga, B. Jayant. "Silicon GTO." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_4.

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Baliga, B. Jayant. "Silicon MCT." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_8.

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Baliga, B. Jayant. "Silicon BRT." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_9.

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Baliga, B. Jayant. "Silicon Carbide Thyristors." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_3.

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Baliga, B. Jayant. "Silicon Carbide IGBT." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_7.

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Agarwal, A., S. H. Ryu, and J. Palmour. "Power MOSFETs in 4H-SiC: Device Design and Technology." In Silicon Carbide. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_33.

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Baliga, B. Jayant. "Silicon IGBT (Insulated Gate Bipolar Transistor)." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_5.

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Conference papers on the topic "Silicon power device"

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Audebert, Amélie, Benjamin Morillon, Brice Le Borgne, and Gaël Gautier. "Optimizing Aluminium/Silicon Temperature Gradient Zone Melting Process for Power Device Periphery." In 2024 International Semiconductor Conference (CAS). IEEE, 2024. http://dx.doi.org/10.1109/cas62834.2024.10736804.

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Zerong, Zhou, Lin Weiming, Yu Ling, Huang Daoyi, and Wu Yaping. "Research on an Active Soft-Switching Dual Boost PFC Circuit Using Silicon Carbide Power Device." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835289.

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Agarwal, Anant, Mrinal Das, Brett Hull, et al. "Progress in Silicon Carbide Power Devices." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305164.

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Kub, Fritz J. "Silicon carbide power device status and issue." In 2012 IEEE Energytech. IEEE, 2012. http://dx.doi.org/10.1109/energytech.2012.6304688.

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Palmour, John W. "Silicon carbide power device development for industrial markets." In 2014 IEEE International Electron Devices Meeting (IEDM). IEEE, 2014. http://dx.doi.org/10.1109/iedm.2014.7046960.

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Neudeck, Philip G., and Lawrence G. Matus. "An overview of silicon carbide device technology." In Proceedings of the ninth symposium on space nuclear power systems. AIP, 1992. http://dx.doi.org/10.1063/1.41831.

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Raju, Uthaman, Praveen Pandojirao-S., Niraja Sivakumar, and Dereje Agonafer. "Static Power Consumption: Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistor." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-44059.

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The static power consumption due to leakage current plays a significant part in semiconductor devices, as the device dimensions continue to shrink. Low power dissipation is one of the critical factors needed to achieve high performance in a chip. New methods are continuously being implemented for reduction of leakage current in deep sub micron ultra thin SOI MOSFET using device simulator tools. In this paper, an 18nm gate length ultra thin SOI MOSFET is simulated for different silicon body thicknesses and the leakage current is determined by using the device simulator, MEDICITM. It is demonstr
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Nakagawa, A., Y. Kawaguchi, and K. Nakamura. "Power Device Evolution Challenging to Silicon Material Limit (Invited)." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.d-6-2.

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Burk, A. A., M. J. O'Loughlin, and L. S. Garrett. "Silicon carbide materials for advanced power electronic devices." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378165.

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Xu, Bin, Chuanbo Li, Maksym Myronov, Z. A. K. Durrani, and Kristel Fobelets. "Si1-xGex Nanowire Arrays for Thermoelectric Power Generation." In 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2012. http://dx.doi.org/10.1109/istdm.2012.6222465.

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Reports on the topic "Silicon power device"

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Sung, YunMo, and Michael S. Mazzola. Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada443645.

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Ghezzo, Marlo. Silicon Carbide Megawatt Power Devices for Combat Vehicles. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada385615.

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