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Journal articles on the topic 'Silicon power device'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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1

Bakowski, Mietek. "Roadmap for SiC power devices." Journal of Telecommunications and Information Technology, no. 3-4 (December 30, 2000): 19–30. http://dx.doi.org/10.26636/jtit.2000.3-4.30.

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Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems. The challenges and prospects of SiC power device development are reviewed considering different device types. A close correlation between an exponential increase of current handling capability during recent five years and improvement in substrate quality is demonstrated. The voltage range of silicon and SiC unipolar and bipolar power devices with respect to the on-state voltage is determined based on device simulation. 4H-SiC unipolar de

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2

Muhamad, Faizal Yaakub, Amran Mohd Radzi Mohd, Hanim Mohd Noh Faridah, and Azri Maaspaliza. "Silicon carbide power device characteristics, applications and challenges: an overview." International Journal of Power Electronics and Drive System (IJPEDS) 11, no. 4 (2020): 2194–202. https://doi.org/10.11591/ijpeds.v11.i4.pp2194-2202.

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Silicon (Si) based power devices have been employed in most high power applications since decades ago. However, nowadays, most major applications demand higher efficiency and power density due to various reasons. The previously well-known Si devices, unfortunately, have reached their performance limitation to cover all those requirements. Therefore, Silicon Carbide (SiC) with its unique and astonishing characteristic has gained huge attention, particularly in the power electronics field. Comparing both, SiC presents a remarkable ability to enhance overall system performance and the transition

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3

Tsai, Hsin Luen. "Fabrication of Silicon Nanowires by Electroless Etching for Thermoelectric Application." Advanced Materials Research 652-654 (January 2013): 642–46. http://dx.doi.org/10.4028/www.scientific.net/amr.652-654.642.

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The fabrication procedure of silicon nanowire thermoelectric device has been developed based on the electroless etching method. Under a fixed etching solution concentration ratio and the etching reaction temperature, silicon nanowire arrays of different lengths manufactured at different etching time were investigated. The longer etching time results in the longer nanowire length. The silicon nanowire arrays were utilized to produce a silicon nanowire thermoelectric device. The I-V characteristics of the present SiNWs thermoelectric device were recorded under different heating temperatures, and

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Vobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.

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Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to

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Soelkner, Gerald, Winfried Kaindl, Michael Treu, and Dethard Peters. "Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure." Materials Science Forum 556-557 (September 2007): 851–56. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.851.

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Cosmic radiation has been identified as a decisive factor for power device reliability. Energetic neutrons create ionizing recoils within the semiconductor substrate which may lead to device burnout. While this failure mode has gained widespread acceptance for power devices based on silicon the question whether a similar mechanism could also lead to failure of SiC devices was left to be debated. Radiation hardness intrinsic to the SiC material was generally assumed but as experimental data was scarce reliability problems due to radiation-induced device failure could not be ruled out. Recent ac

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6

Kizilyalli, Isik C., Olga Blum Spahn, and Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future." ECS Transactions 109, no. 8 (2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.

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Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors, such as silicon carbide and gallium nitride, are likely candidates to replace silicon in the near future for high power applications as silicon is fast approaching its performance limits. Wide-bandgap power semiconductor devices enable breakthrough circuit performance and energy efficiency gains in a wide range of potential applications. The U.S. Department of Energ

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Kang, Haneul, Hyunji Kim, Sunghoon Im, Jinho Yang, and Sunchul Huh. "A Study on the Thermal Conductivity of Thermal Grease According to Cu-Ni Content." Key Engineering Materials 880 (March 2021): 71–76. http://dx.doi.org/10.4028/www.scientific.net/kem.880.71.

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An increase in power consumption density is related to the internal thermal characteristics of an electronic device, and the heat dissipation of the device is directly related to the high performance and miniaturization of the device. TIM (thermal interface material) with excellent internal heat dissipation performance are mainly used to improve the heat dissipation performance of electronic devices. Recently, the need for a high-efficiency TIM with high-performance thermal conductivity and low thermal contact resistance has increased. In this study, thermal grease was prepared by mixing Cu-Ni

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8

ELFORD, ANDREW, and PHILIP ANDREW MAWBY. "Emerging Silicon Carbide Power Device Technologies." Journal of Wide Bandgap Materials 7, no. 3 (2000): 179–91. http://dx.doi.org/10.1106/hx1n-dl9k-yk3x-uy54.

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9

Phlips, Bernard F., Karl D. Hobart, Francis J. Kub, et al. "Silicon Carbide Power Diodes as Radiation Detectors." Materials Science Forum 527-529 (October 2006): 1465–68. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1465.

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We have tested the radiation detection performance of Silicon Carbide (SiC) PIN diodes originally developed as high power diodes. These devices consist of 100 micron thick SiC grown epitaxially on SiC substrates. The size and thickness of the devices make them appropriate for a number of radiation detection applications. We tested 0.25 cm2 and 0.5 cm2 devices and obtained X-ray spectra under illumination with an Am-241 radioactive source. The spectra showed an energy resolution that was consistent with the resolution expected for the large capacitance of the device. Smaller devices with a diam

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10

Kitchen, Jennifer, Soroush Moallemi, and Sumit Bhardwaj. "Multi-chip module integration of Hybrid Silicon CMOS and GaN Technologies for RF Transceivers." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (2019): 000339–82. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_010.

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Digital transceiver architectures offer the potential for achieving wireless hardware flexibility to frequency and modulation scheme for future-generation communications systems. Additionally, digital transmitters lend themselves to the use of switch-mode power amplifiers, which can have significantly higher efficiency than their linear counterparts. Two proposed architectures for realizing digital transmitters will be described in this work, both of which employ a hybrid combination of silicon integrated circuits (IC) and a power technology (e.g. GaN). This hybrid architecture takes advantage

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Musumeci, Salvatore, and Vincenzo Barba. "Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives." Energies 16, no. 9 (2023): 3894. http://dx.doi.org/10.3390/en16093894.

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride tech

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12

Walden, Ginger G., Ty McNutt, Marc Sherwin, Stephen Van Campen, Ranbir Singh, and Rob Howell. "Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion." Materials Science Forum 600-603 (September 2008): 1139–42. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1139.

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For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel IGBTs and MOSFETs are evaluated using numerical simulations software over an extended current range to determine the best device suitable for 10 kV applications. Each device is also optimized for minimal forward voltage drop in the on-state.

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13

Chow, T. Paul. "SiC Bipolar Power Devices." MRS Bulletin 30, no. 4 (2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.

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AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

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Yang, Yue, Bo Chen, and Xiayao Zhao. "Analysis of A Few Continuous Ferromagnetic Resonance PT Faults in Power Plants and Improvement Measures of Harmonic-free Suppression Technology." Journal of Physics: Conference Series 2418, no. 1 (2023): 012090. http://dx.doi.org/10.1088/1742-6596/2418/1/012090.

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Abstract Many vicious faults of burning PT and high-voltage fuse caused by ferroresonance occurred in power plants. Microcomputer harmonic elimination device and silicon carbide harmonic elimination device did not work; particularly silicon carbide harmonic elimination devices burnt together with PT. This paper, enumerating the excitation conditions of PT ferromagnetic resonance, analyzes the circuit characteristics of PT circuit ferromagnetic resonance in the power plant and the power frequency voltage characteristics of the sound phase when the single-phase grounding fault occurs in the neut

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15

OZPINECI, BURAK, LEON M. TOLBERT, SYED K. ISLAM, and MD HASANUZZAMAN. "SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 439–48. http://dx.doi.org/10.1142/s0129156402001368.

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The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of

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Friedrichs, Peter. "SiC Power Devices as Enabler for High Power Density - Aspects and Prospects." Materials Science Forum 778-780 (February 2014): 1104–9. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1104.

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Comparable to silicon the main way to improve the cost performance of SiC power devices is to go up with current density since the main selling point of a power device is its current handling capability. To follow this path successfully a couple of application and system relevant aspects should be taken into account beside the pure focus on reducing nominal or absolute losses at chip level. This paper will address some of those topics in combination with discussing state of the art device technologies on SiC. Also some considerations regarding the operation of SiC devices at elevated temperatu

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17

Chen, Lu. "Design and Application of High-Efficiency Gallium Nitride (GaN)-Based Power Electronic Devices." Applied and Computational Engineering 153, no. 1 (2025): 90–95. https://doi.org/10.54254/2755-2721/2025.23350.

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As silicon technology reaches its physical limits, gallium nitride (GaN) electronic devices are emerging as a disruptive solution in power electronics. GaN devices, with their superior breakdown voltage, exceptional thermal stability, and outstanding high-frequency performance, offer considerable benefits over traditional silicon-based devices. And these properties increase power density, switching speed, and greatly enhance energy efficiency, making GaN a key technology driving the development of next-generation power electronic systems. This paper reviews the latest advancements in GaN epita

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FREEMAN, G. G., B. JAGANNATHAN, N. ZAMDMER, et al. "INTEGRATED SiGe AND Si DEVICE CAPABILITIES AND TRENDS FOR MULTI-GIGAHERTZ APPLICATIONS." International Journal of High Speed Electronics and Systems 13, no. 01 (2003): 175–219. http://dx.doi.org/10.1142/s0129156403001570.

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Silicon-based devices, including the increasingly available SiGe-based devices, are now demonstrating fT and fMAX values over 200 GHz. These recent advances open the door to a wide range of silicon-based very high frequency, low power and highly integrated solutions. Trends in silicon MOS, SiGe HBT, SiGe MODFET and SiGe strained silicon FETs are reported. Silicon inroads to device functions viewed as the sole realm of III-V technologies are also being demonstrated. Capability and trends of the integrated silicon photodiode are reported here as an example. Integration of these high-speed device

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19

Ikpe, Stanley A., Jean-Marie Lauenstein, Gregory A. Carr, et al. "Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (2016): 000184–89. http://dx.doi.org/10.4071/2016-hitec-184.

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Abstract Silicon-Carbide (SiC) device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon (Si) counterpart, SiC offers a greater possibility for high powered switching applications in extreme environment. In particular, SiC Metal-Oxide-Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit

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20

Radhakrishnan, M. K., K. Nandanan, and S. K. Premachandran. "Quality Aspects in Silicon Power Device Manufacturing." IETE Technical Review 7, no. 5-6 (1990): 391–95. http://dx.doi.org/10.1080/02564602.1990.11438678.

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POOBALAN, BANU, Nuralia Syahida Hashim, and Manikandan Natarajan. "THE MODELLING AND ANALYSIS OF TEMPERATURE-DEPENDENT SILICON AND SILICON CARBIDE-BASED POWER DEVICE PERFORMANCE FOR HIGH-VOLTAGE APPLICATIONS USING MACHINE-LEARNING APPROACHES." Suranaree Journal of Science and Technology 31, no. 2 (2024): 010295(1–11). http://dx.doi.org/10.55766/sujst-2024-02-e02681.

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This study has revealed that On-State-Drain to Source resistance RDS(on) is one of the most significant variables influencing the performance of silicon and SiC-based power semiconductor devices in high-voltage applications. The low RDS(on) of power devices helps to drastically cut energy usage, enabling customers to create greener systems and products that lower CO2 emissions. In SiC MOSFETs, low RDS(on) enables significant system size and power consumption reductions in a range of applications, including traction inverters for electric vehicles and switching power supply. This work analyses

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Maralani, Ayden, Wei Cheng Lien, Nuo Zhang, and A. P. Pisano. "Silicon Carbide Transistors for IC Design Applications up to 600 °C." Materials Science Forum 778-780 (February 2014): 1126–29. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1126.

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Low power Silicon Carbide (SiC) devices and Integrated Circuits (ICs) in conjunction with SiC or Aluminum Nitride (AlN) sensing elements will enable sensing functions in high temperature environments up to 600 °C where no silicon based devices or circuits have been able to survive in that temperature range. In power electronics applications, existence of low power SiC devices and IC technologies will significantly aid the development of high power density power modules in which total weights and cooling systems sizes are reduced. This paper will be evaluating the performances of the fabricated

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Carlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.

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Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature o

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Furubayashi, Yutaka, Takafumi Tanehira, Kei Yonemori, Nobuhide Seo, and Shinichiro Kuroki. "3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device." Materials Science Forum 858 (May 2016): 1107–11. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1107.

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We propose 3-D integration of Peltier device onto a power device. In order to transport a heat from the power device, as a suitable material of the Peltier device, silicon was adopted because of its high Seebeck coefficient, high thermal conductivity, and applicability to semiconductor process. Bulk Si-based Peltier devices with conventional shape showed an active thermal transport over a Joule heat at the operation current less than 5 A. 3-D integration of 4H-SiC-based Schottky barrier diodes and Si-based film Peltier device, separated by intrinsic SiC layer, was realized by using conventiona

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Huang, Yinghao. "Study on short circuit effect of silicon carbide power devices." Applied and Computational Engineering 9, no. 1 (2023): 34–42. http://dx.doi.org/10.54254/2755-2721/9/20230027.

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SiC can provide better material properties when the performance of Si - based power devices is almost developed to the limit. But compared with Si material, the reliability of SiC device is poor under ultimate stress. The short circuit capability of SiC MOSFET has been the main area of attention in this papers study. Through the analysis of SiC MOSFET short-circuit capability, it is mainly represented by the time that the device can withstand short-circuit stress and the time it takes for the device to be safely turned off in the event of a short circuit fault. Secondly, the detection circuit

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Liang, Guoying, Baoming Xu, and Xiaoyun Wei. "Collision Cascade in a Silicon-Based Device under Energetic Ar Ions Irradiation." Coatings 13, no. 11 (2023): 1828. http://dx.doi.org/10.3390/coatings13111828.

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Silicon, as the basic material of biochips and electronic devices, is often exposed to irradiation environments, and its radiation resistance has attracted much attention in recent decades. We calculated collision cascade in a silicon-based device under energetic Ar ions irradiation by using Monte Carlo and molecular dynamics simulations. The difference in vacancy probability density under different energetic incident ion irradiation is caused by the penetrating power and the straggling power of incident ions. The kinetic energy of an incident ion determines the size of local collision cascade

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Palmer, Michael J., R. Wayne Johnson, Tracy Autry, Rizal Aguirre, Victor Lee, and James D. Scofield. "SiC Power Switch Module." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (2010): 000316–24. http://dx.doi.org/10.4071/hitec-rwjohnson-wp26.

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A hermetic, multichip power package for silicon carbide devices that will operate in a 200°C ambient and switch 50 to 100 amps has been developed. The Al2O3/MoCu structure, upon which the SiC JFETs and diodes have been attached, was designed in a manner to hermetically seal the device areas. Details of the materials and processes used to fabricate the package are discussed. Die attach, ribbon bonding and lid attach are also described.

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Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, and Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.

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Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect me

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Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, Ibrahim Taib B, and Yusof Abdullah. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (2019): 1453–60. https://doi.org/10.11591/ijece.v9i2.pp1453-1460.

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Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect me

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Matocha, Kevin, Ed Kaminsky, Alexey Vertiatchikh, and Jeff B. Casady. "High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation." Materials Science Forum 527-529 (October 2006): 1239–42. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1239.

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4H-SiC MESFETs were fabricated using a bilayer dry thermal oxide/low-pressure chemical vapor deposited (LPCVD) silicon nitride for surface passivation. The passivation dielectric consists of a 20 nm thick dry thermal oxide covered by a 45 nm thick LPCVD silicon nitride layer. Devices utilize a recessed-channel architecture with 0.6 micron T-gates. Devices with the bilayer SiO2/SiNx passivation achieved a ft=9.3 GHz and fmax=15.5 GHz (WG=1.5 mm). The device transconductance was 34 mS/mm, drain current density was 235 mA/mm, and pinchoff voltage was –8V. Devices were load-pull characterized at 3

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Radhakrishnan, Rahul, Tony Witt, Seungchul Lee, and Richard Woodin. "Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters." Materials Science Forum 858 (May 2016): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.177.

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Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation

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Wagaj, S. C., and S. C. Patil. "Performance Analysis of CMOS Circuits using Shielded Channel Dual Gate Stack Silicon on Nothing Junctionless Transistor." International Journal of Engineering and Advanced Technology 10, no. 6 (2021): 1–10. http://dx.doi.org/10.35940/ijeat.e2576.0810621.

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In this paper it has been demonstrated that a shielded channel made by varying the side gate length in silicon-on-nothing junctionless transistor not only improves the short channel effect but also improve the performance of CMOS circuits of this device. The proposed device shielded channel dual gate stack silicon on nothing junctionless transistor (SCDGSSONJLT) drain induced barrier lowering (DIBL), cut-off frequency and subthreshold slope are improved by 20%, 39% and 20% respectively over the single material gate silicon on insulator junctionless transistor (SMG SOI JLT). The proposed device

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S.C., Wagaj, and S.C.Patil. "Performance Analysis of CMOS Circuits using Shielded Channel Dual Gate Stack Silicon on Nothing Junctionless Transistor." International Journal of Engineering and Advanced Technology (IJEAT) 10, no. 6 (2021): 1–10. https://doi.org/10.35940/ijeat.E2576.0810621.

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In this paper it has been demonstrated that a shielded channel made by varying the side gate length in silicon-on-nothing junctionless transistor not only improves the short channel effect but also improve the performance of CMOS circuits of this device. The proposed device shielded channel dual gate stack silicon on nothing junctionless transistor (SCDGSSONJLT) drain induced barrier lowering (DIBL), cut-off frequency and subthreshold slope are improved by 20%, 39% and 20% respectively over the single material gate silicon on insulator junctionless transistor (SMG SOI JLT). The proposed device

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Ji, Dong, and Srabanti Chowdhury. "On the Progress Made in GaN Vertical Device Technology." International Journal of High Speed Electronics and Systems 28, no. 01n02 (2019): 1940010. http://dx.doi.org/10.1142/s012915641940010x.

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Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms th

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Veliadis, Victor. "(Invited) Barriers to SiC Power Semiconductor Device Commercialization." ECS Meeting Abstracts MA2024-02, no. 36 (2024): 2519. https://doi.org/10.1149/ma2024-02362519mtgabs.

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There are several reasons behind silicon’s dominance of the power electronics market. Silicon is renowned for its excellent starting material quality, ease of processing, opportunity for low-cost mass production, proven reliability, and circuit design legacy. However, despite significant progress, silicon devices are now approaching their operational limits. They are held back by their relatively low bandgap and low critical electric field, traits that result in high conduction and switching losses and substandard high-temperature performance. To address these shortcomings, much effort has bee

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Guo, Jianing. "Analysis of Current Imbalance in Paralleled Silicon Carbide Power MOSFETs." Academic Journal of Science and Technology 3, no. 3 (2022): 247–54. http://dx.doi.org/10.54097/ajst.v3i3.2992.

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In order to adapt to the application scenarios of high power variable current, it is an effective solution to parallel multiple silicon carbide (SiC) power. However, the static parameters of SiC MOSFET devices are dispersed, the parasitic parameters of power loop are asymmetric, and the working junction temperature of the devices is different. All these factors will lead to non-uniform current stress between parallel devices.This article is based on the SiC MOSFET device provided in Wolfspeed,to explore the impact of circuit parameters mismatch on current sharing in parallel components. The in

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Pan, J., S. Afroz, N. Crain, W. Henning, J. Oliver, and T. Knight. "Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC." MRS Advances 4, no. 44-45 (2019): 2377–82. http://dx.doi.org/10.1557/adv.2019.224.

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AbstractIn this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide int

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Tang, Hualian, Ailan Tang, Weifeng Liu, Jingxiang Huang, Jianjun Song, and Wenjie Sun. "A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission." Micromachines 16, no. 1 (2024): 58. https://doi.org/10.3390/mi16010058.

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This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. By combining theoretical analysis with device simulations, the impacts of the ferroelectric material anisotropy, ferroelectric layer thickness, and active region doping concentration on the device performance were systematically optimized. The proposed NCFET structure is tailored for microwave wireless power transmission applications. Bas

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Jallepalli, Srinivas, Mahbub Rashed, and Peter Zdebel. "Device simulations for low voltage/low power silicon CMOS device design." Microelectronic Engineering 39, no. 1-4 (1997): 139–44. http://dx.doi.org/10.1016/s0167-9317(97)00171-8.

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Fonseca, Luis, Inci Donmez-Noyan, Marc Dolcet, et al. "Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators." Nanomaterials 11, no. 2 (2021): 517. http://dx.doi.org/10.3390/nano11020517.

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The thermoelectric performance of nanostructured low dimensional silicon and silicon-germanium has been functionally compared device-wise. The arrays of nanowires of both materials, grown by a VLS-CVD (Vapor-Liquid-Solid Chemical Vapor Deposition) method, have been monolithically integrated in a silicon micromachined structure in order to exploit the improved thermoelectric properties of nanostructured silicon-based materials. The device architecture helps to translate a vertically occurring temperature gradient into a lateral temperature difference across the nanowires. Such thermocouple is c

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Chen, Zibo, and Alex Q. Huang. "Busbar Design for High-Power SiC Converters." Electronics 13, no. 23 (2024): 4758. https://doi.org/10.3390/electronics13234758.

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Busbars are critical components that connect high-current and high-voltage subcomponents in high-power converters. This paper reviews the latest busbar design methodologies and offers design recommendations for both laminated and PCB-based busbars. Silicon Carbide (SiC) power devices switch at much higher speeds compared to traditional silicon devices, making them more susceptible to parasitic elements within the busbar. In high-frequency SiC converters, using thicker copper offers limited improvement in high-frequency current handling due to the reduced skin depth at such frequencies. PCB bus

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Ehrich, F. F., and S. A. Jacobson. "Development of High-Speed Gas Bearings for High-Power Density Microdevices." Journal of Engineering for Gas Turbines and Power 125, no. 1 (2002): 141–48. http://dx.doi.org/10.1115/1.1498273.

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A 4.2-mm diameter silicon rotor has been operated in a controlled and sustained manner at rotational speeds greater than 1.3 million rpm and power levels approaching 5 W. The rotor, supported by hydrostatic journal and thrust gas bearings, is driven by an air turbine. This turbomachinery/bearing test device was fabricated from single-crystal silicon wafers using micro-fabrication etching and bonding techniques. We believe this device is the first micro-machine to operate at a circumferential tip speed of over 300 meters per second, comparable to conventional macroscale turbomachinery, and nece

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Roccaforte, Fabrizio, Patrick Fiorenza, Marilena Vivona, Giuseppe Greco, and Filippo Giannazzo. "Selective Doping in Silicon Carbide Power Devices." Materials 14, no. 14 (2021): 3923. http://dx.doi.org/10.3390/ma14143923.

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Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to i

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Hao, Xiafei, and Sanbo Pan. "Computational Model of Silicon Carbide JFET Power Device." Energy Procedia 16 (2012): 1994–2002. http://dx.doi.org/10.1016/j.egypro.2012.01.304.

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Lu, Ya Ping, Tian Lin Song, and Hai Qing Liu. "Influence of Silicon Controlled Rectifier Voltage Regulation Device under DDC-Temperature Control." Advanced Materials Research 706-708 (June 2013): 826–29. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.826.

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In the boiler heating control device of combining DDC and the silicon controlled rectifier voltage regulation device, there are phase shift trigger, pulse width modulation (PWM) and cycle wave cross zero trigger (CYC). Under the different silicon controlled rectifier voltage regulation devices, there are different influences for DDC. It makes the best of the cycle characteristics of the alternating current (AC) for the cycle wave cross zero trigger (CYC). For DDC - temperature control system, there are advantages of high control accuracy, less interference and power source pollution.

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Opondo, Noah, James A. Cooper, Hang Jie Liao, Wei Nong Chen, and Dallas Morisette. "The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices." Materials Science Forum 1004 (July 2020): 738–46. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.738.

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Silicon carbide (SiC) is enabling the next generation of semiconductor power devices, with performance orders-of-magnitude beyond silicon. The most important power switching device is the SiC power MOSFET, whose performance is limited by three main resistance elements: the channel, drift layer, and substrate. For blocking voltages in the range of 400-900V, substrate resistance is a major limitation. Wafer thinning is currently used to reduce the substrate resistance, but this also reduces the strength of the wafers. We report on a waffle substrate technique that relies on wafer thinning and in

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Singh, Avtar, Chandan Kumar Pandey, Saurabh Chaudhury, and Chandan Kumar Sarkar. "Effect of strain in silicon nanotube FET devices for low power applications." European Physical Journal Applied Physics 85, no. 1 (2019): 10101. http://dx.doi.org/10.1051/epjap/2018180236.

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In this paper, we have presented an analysis on the performance of a strained silicon channel in silicon nanotube FET (Si-NTFET) device. Si-NTFET devices have tube-shaped channel region and because of this conduction in the channel can be controlled in two ways from outside the tube and from inside (from hollow side) the tube which results in better control over the short channel effects (SCEs). Bi-axial strain induced into the device by the inclusion of silicon-–germanium layer in between the channel. Three-dimensional simulations of the structure are carried out using ATLAS TCAD simulator an

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Kong, Cen, Jian Jun Zhou, Jin Yu Ni, Yue Chan Kong, and Tang Sheng Chen. "High Breakdown Voltage GaN Power HEMT on Si Substrate." Advanced Materials Research 805-806 (September 2013): 948–53. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.948.

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GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET

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Schaeberle, Michael D., David D. Tuschel, and Patrick J. Treado. "Raman Chemical Imaging of Microcrystallinity in Silicon Semiconductor Devices." Applied Spectroscopy 55, no. 3 (2001): 257–66. http://dx.doi.org/10.1366/0003702011951867.

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Silicon integrated circuits are fabricated by the creation of complex layered structures. The complexity of these structures provides many opportunities for impurities, improperly annealed dopants, and stress effects to cause device contamination and failure. Nondestructive metrology techniques that rapidly and noninvasively screen for defects and relate silicon device structure to device performance are of value. We describe the first use of a liquid crystal tunable filter (LCTF) Raman chemical imaging microscope to assess the crystallinity of silicon semiconductor integrated circuits in a ra

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Liu, Si Yang, B. Jayant Baliga, Yi Fan Jiang, Wei Feng Sun, Subhashish Bhattacharya, and Alex Q. Huang. "Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures." Materials Science Forum 924 (June 2018): 719–22. http://dx.doi.org/10.4028/www.scientific.net/msf.924.719.

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Silicon Carbide (SiC) power MOSFETs become more important in 10kV industrial application level, beginning to replace the silicon devices. Due to the harsh environments, high temperature performances of 10kV SiC MOSFETs must be concerned and understood. In this paper, comprehensive static and dynamic parameters of 10kV SiC MOSFETs have been measured up to 225°C. The device physics behind high temperature behaviors has been analyzed by using the basic analytical models.

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