Relevant bibliographies by topics / Silicon Quantum Dot

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Silicon Quantum Dot'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "Silicon Quantum Dot"

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Parthasarathy, Barath, Pial Mirdha, Jun Kondo, and Faquir Jain. "Dual Quantum Dot Superlattice." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840003. http://dx.doi.org/10.1142/s0129156418400037.

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In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transistor (QDG-FET).
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Luna-Sánchez, Rosa María, and Ignacio González-Martínez. "Nanocrystalline Silicon Quantum Dot Devices." ECS Transactions 2, no. 1 (December 21, 2019): 147–55. http://dx.doi.org/10.1149/1.2193883.

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Cho, Eun-Chel, Sangwook Park, Xiaojing Hao, Dengyuan Song, Gavin Conibeer, Sang-Cheol Park, and Martin A. Green. "Silicon quantum dot/crystalline silicon solar cells." Nanotechnology 19, no. 24 (May 9, 2008): 245201. http://dx.doi.org/10.1088/0957-4484/19/24/245201.

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Dvurechenskii, Anatoly, Andrew Yakimov, Victor Kirienko, Alekcei Bloshkin, Vladimir Zinovyev, Aigul Zinovieva, and Alexander Mudryi. "Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures." Defect and Diffusion Forum 386 (September 2018): 68–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.68.

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New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.
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Kondo, Jun, Pial Mirdha, Barath Parthasarathy, Pik-Yiu Chan, Bander Saman, Faquir Jain, and Evan Heller. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.

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Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots provide higher electron mobility than conventional poly-silicon FETs, and mobility values comparable to conventional FETs using single crystalline silicon.
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Pokutnyi, Sergey I., and Lucjan Jacak. "Intensity of Radiative Recombination in the Germanium/Silicon Nanosystem with Germanium Quantum Dots." Crystals 11, no. 3 (March 11, 2021): 275. http://dx.doi.org/10.3390/cryst11030275.

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It is shown that in a germanium/silicon nanosystem with germanium quantum dots, the hole leaving the germanium quantum dot causes the appearance of the hole energy level in the bandgap energy in a silicon matrix. The dependences of the energies of the ground state of a hole and an electron are obtained as well as spatially indirect excitons on the radius of the germanium quantum dot and on the depth of the potential well for holes in the germanium quantum dot. It is found that as a result of a direct electron transition in real space between the electron level that is located in the conduction band of the silicon matrix and the hole level located in the bandgap of the silicon matrix, the radiative recombination intensity in the germanium/silicon nanosystem with germanium quantum dots increases significantly.
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Eriksson, Mark A., Mark Friesen, Susan N. Coppersmith, Robert Joynt, Levente J. Klein, Keith Slinker, Charles Tahan, P. M. Mooney, J. O. Chu, and S. J. Koester. "Spin-Based Quantum Dot Quantum Computing in Silicon." Quantum Information Processing 3, no. 1-5 (October 2004): 133–46. http://dx.doi.org/10.1007/s11128-004-2224-z.

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Hsieh, You-Da, Ming-Way Lee, and Gou-Jen Wang. "Sb2S3Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode." International Journal of Photoenergy 2015 (2015): 1–10. http://dx.doi.org/10.1155/2015/213858.

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We propose a novel quantum-dot sensitized solar cell (QDSSC) structure that employs a quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode. We replaced the backlight input mode with top-side illumination and used a quantum dot to replace dye as the light-absorbing material. Photon-excited photoelectrons can be effectively transported to each silicon nanorod and conveyed to the counter electrode. We use two-stage metal-assisted etching (MAE) to fabricate the micro-nano hybrid structure on a silicon substrate. We then use the chemical bath deposition (CBD) method to synthesize a Sb2S3quantum dot on the surface of each silicon nanorod to form the photoelectrode for the quantum dot/semiconductor silicon coaxial nanorod array. We use a xenon lamp to simulate AM 1.5 G (1000 W/m2) sunlight. Then, we investigate the influence of different silicon nanorod arrays and CBD deposition times on the photoelectric conversion efficiency. When an NH (N-type with high resistance) silicon substrate is used, the QD/Si coaxial nanorod array synthesized by three runs of Sb2S3deposition shows the highest photoelectric conversion efficiency of 0.253%. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 5.19 mA/cm2, 0.24 V, and 20.33%, respectively.
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Xu, Zhiyang, Hao Zhang, Chao Chen, Gohar Aziz, Jie Zhang, Xiaoxia Zhang, Jinxiang Deng, Tianrui Zhai, and Xinping Zhang. "A silicon-based quantum dot random laser." RSC Advances 9, no. 49 (2019): 28642–47. http://dx.doi.org/10.1039/c9ra04650j.

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Khoury, M., M. J. Rack, A. Gunther, and D. K. Ferry. "Spectroscopy of a silicon quantum dot." Applied Physics Letters 74, no. 11 (March 15, 1999): 1576–78. http://dx.doi.org/10.1063/1.123621.

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Dissertations / Theses on the topic "Silicon Quantum Dot"

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Van, Sickle Austin Reed. "Temperature Dependent Optical Properties of Silicon Quantum Dot/Polymer Nanocomposites." Thesis, North Dakota State University, 2012. https://hdl.handle.net/10365/26619.

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The photoluminescent properties of silicon quantum dots embedded in a stabilizing polymer matrix are relevant to a number of potential applications of these unique nanomaterials such as drug delivery, temperature sensing, and photovoltaics. Aspects of how these photoluminescent properties change with respect to variations in such parameters as excitation intensity, polymer interactions, particle size and particle polydispersity are investigated here. Improving the photostability and understanding the nature of how this is achieved will be critical for realizing the potential of silicon quantum dots in a number of applications. Improvements in photoluminescent stability related to fluorescence intermittency, radiative lifetime, emitted intensity, and wavelength shifts are shown to be due to decreased exposure to oxygen, increased particle packing, decreased temperature, and increased monodispersity of the quantum dots.
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Cho, Young Hyun Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Silicon quantum dot superlattices in dielectric matrices: SiO2, Si3N4 and SiC." Awarded by:University of New South Wales, 2007. http://handle.unsw.edu.au/1959.4/40172.

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Silicon quantum dots (QDs) in SiO2 superlattices were fabricated by alternate deposition of silicon oxide (SiO2) and silicon-rich oxide (SRO), i.e. SiOx (x<2), and followed by high temperature annealing. A deposited SRO film is thermodynamically unstable below 1173oC and phase separation and diffusion of Si atoms in the amorphous SiO2 matrix creates nano-scaled Si quantum dots. The quantum-confined energy gap was measured by static photoluminescence (PL) using an Argon ion laser operating at 514.5 nm. The measured energy band gaps of crystalline Si QDs in SiO2 matrix at room temperature (300 K) show that the emission energies from 1.32 eV to 1.65 eV originating Si dot sizes from 6.0 nm to 3.4 nm, respectively. There is a strong blue-shift of the PL energy peak position with decreasing the quantum dot size and this shows the evidence of quantum confinement of our fabricated Si QDs in SiO2 matrix. The PL results indicate that the fabricated Si QDs in SiO2 matrix could be suitable for the device application such as top cell material for all-silicon tandem solar cells. Silicon QD superlattices in nitride matrix were fabricated by alternate deposition of silicon nitride (Si3N4) and silicon-rich nitride (SRN) by PECVD or co-sputtering of Si and Si3N4 targets. High temperature furnace annealing under a nitrogen atmosphere was required to form nano-scaled silicon quantum dots in the nitride matrix. The band gap of silicon QD superlattice in nitride matrix (3.6- 7.0 nm sized dots) is observed in the energy range of 1.35- 1.98 eV. It is about 0.3- 0.4 eV blue-shifted from the band gap of the same sized quantum dots in silicon oxide. It is believed that the increased band gap is caused by a silicon nitride passivation effect. Silicon-rich carbide (SRC, i.e. Si1-xCx) thin films with varying atomic ratio of the Si to C were fabricated by using magnetron co-sputtering from a combined Si and C or SiC targets. Off-stoichiometric Si1-xCx is of interest as a precursor to realize Si QDs in SiC matrix, because it is thermodynamically metastable when the composition fraction is in the range 0 < x < 0.5. Si nanocrystals are therefore able to precipitate during a post-annealing process. SiC quantum dot superlattices in SiC matrix were fabricated by alternate deposition of thin layers of carbon-rich silicon carbide (CRC) and SRC using a layer by layer deposition technique. CRC layers were deposited by reactive co-sputtering of Si and SiC targets with CH4. The PL energy band gap (2.0 eV at 620 nm) from 5.0 nm SRC layers could be from the nanocrystalline ??-SiC with Si-O bonds and the PL energy band gap (1.86 eV at 665 nm) from 6.0 nm SRC layers could be from the nanocrystalline ??-SiC with amorphous SiC clusters, respectively. The dielectric material for an all-silicon tandem cell is preferably silicon oxide, silicon nitride or silicon carbide. It is found that for carrier mobility, dot spacing for a given Bloch mobility is in the order: SiC > Si3N4 > SiO2. By ab-initio simulation and PL results, the band gap for a given dot size is in the order: SiC > Si3N4 > SiO2. However, the PL intensity for a given dot size is in the order: SiC < Si3N4 < SiO2.
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Surana, Kavita. "Towards silicon quantum dot solar cells : comparing morphological properties and conduction phenomena in Si quantum dot single layers and multilayers." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00647293.

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Le confinement quantique dans le silicium, sous forme de boîtes quantiques de silicium de diamètre 5 nm, permet de contrôler le bandgap et donc l'émission de lumière. Cette ingénierie du bandgap des nanocristaux de silicium est utile pour les applications photovoltaïques avancées et présente l'avantage de conserver la compatibilité avec les technologies silicium existantes. Ces boîtes quantiques peuvent aider à réduire les pertes par thermalisation dans une cellule solaire homo-jonction. Ce travail se concentre sur la fabrication à grande échelle des nanocristaux de silicium dans SiO2 en utilisant le Dépôt Chimique en Phase Vapeur assisté par Plasma (PECVD), suivi d'un recuit à haute température. Des monocouches sont comparées avec des multicouches pour les propriétés morphologiques, électriques et optiques et des dispositifs avec ces différents couches sont comparés. Dans le cas d'une structure monocouche, l'épaisseur de la couche contrôle l'organisation des nanocristaux et permet de mettre en évidence l'amélioration de la conductivité électrique, avec cependant une réponse optique faible. Les multicouches montrent un bandgap du Si augmentée et controlee, avec une meilleure absorption dans la gamme bleu-vert visible, accompagnée d'une conductivité électrique faible. L'amélioration de ces propriétés optiques est un signe prometteur pour une potentielle intégration photovoltaïque.
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Bruer, Garrett (Garrett A. ). "Luminescent, quantum dot-based anti-reflective coatings for crystalline silicon photovoltaics." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/62673.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 107-116).
This thesis demonstrates and evaluates the potential application of luminescent quantum dot/polymer solutions on crystalline silicon photovoltaics. After spin coating the QD/polymer onto silicon photodiodes, an increase of 3% in current density was observed. This performance improvement was used to determine the impact application would have on the crystalline silicon photovoltaic supply chain. Supply chain costs were modeled to estimate the segment costs for Sharp's NUU230F3 230W module. The benefits realized by use of cells coated with the QD/polymer solution were then estimated at both the module and the cell segments. Finally, an installation cost model for the residential market was built to determine the impact an increase in efficiency had on total system costs.
by Garrett Bruer.
M.Eng.
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Tang, M. "InAs/GaAs quantum-dot light emitting sources monolithically grown on silicon substrates." Thesis, University College London (University of London), 2016. http://discovery.ucl.ac.uk/1516051/.

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Si-based light emitting sources are highly demanded for applications in optoelectronic integration circuits. Unfortunately, Si has an indirect bandgap and thus a low efficiency in photon emission. On the other hand, III–V semiconductors have superior optical properties and are considered as strong candidates to achieve efficient light emitting sources on Si platforms via wafer bonding or monolithically epitaxy growth. III–V materials monolithically grown on Si substrate could introduce various types of defects including antiphase domain, threading dislocation, misfit dislocation. These defects must be dealt with satisfactorily in order to fulfill the potential of III–V/Si integration. In this thesis, buffer layers for InAs/GaAs quantum dots (QDs) monolithically grown Si substrate have been investigated. The buffer layer study is mainly focused on the different types of defect filter layers (DFLs). The measurements of atomic force microscopy, photoluminescence and transmission electron microscopy are carried out to investigate the effectiveness of each type of DFLs. The results of lasers and superluminescent diodes (SLDs) have been presented based on the studies of DFLs. In order to improve the performance of InAs/GaAs QDs grown on Si substrates, a GaAs buffer layer and DFLs have been used to reduce the defect density from ~1010 to 106 cm-2 after three sets of DFLs, which consists of strained layer superlattices (SLSs). In the thesis, the optimisation of DFLs has been carried out. Different types of DFLs are investigated in the Chapter 3, including InAs/GaAs QDs, InGaAs submonolayer QDs, InGaAs/GaAs SLSs and InAlAs/GaAs SLSs. DFLs made of InAlAs/GaAs SLSs show the strongest performance, based on the measurements of atomic force microscopy, photoluminescence and transmission electron microscopy. The high performance InAs/GaAs QDs lasers with low threshold current density (194 A/cm2 ) and high operating temperature (85 ̊C) has been obtained for the samples with optimised DFLs. In addition to III–V/Si lasers, III–V SLDs monolithically grown on silicon substrates would further enrich the silicon photonics toolbox, enabling low-cost, highly scalable, high-functional, and streamlined on-chip light sources. In this thesis, the first InAs/GaAs QD SLDs monolithically grown on a Si substrate have been demonstrated based on the similar growth structure of laser devices. The fabricated two-section InAs/GaAs QD SLD produces a close- 4 to-Gaussian emission spectrum of 114 nm centred at ∼1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. The optimisation of InGaAs/GaAs SLSs DFLs has been carried out in the Chapter 5. The optimisation includes introducing different growth methods into GaAs spacer layer between each set of DFL, indium composition and GaAs thickness in InGaAs/GaAs SLSs. The optimisation is examined by atomic force microscopy, photoluminescence and transmission electron microscopy. The laser device with optimised InGaAs/GaAs SLSs DFLs has a lower threshold current density, higher operating temperature and characteristic temperature. In conclusion, InAs/GaAs QDs lasers with low threshold current density and the first QDs SLDs monolithically grown on Si substrates have been demonstrated. InAlAs/GaAs SLSs DFLs have been proved that as considerable solution to reduce the threading dislocation density significantly. The optimisations of InGaAs/GaAs SLSs DFLs successfully improve the QDs laser performance which could also be used in III–V/Si monolithically integration. The III–V QDs lasers and SLDs monolithically grown on Si substrate are essential steps for Si photonics integration, which will fill the “holy grail” of opto-electronic integration circuits.
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Lee, A. D. "1300-nm InAs/GaAs quantum-dot lasers monolithically grown on silicon substrates." Thesis, University College London (University of London), 2015. http://discovery.ucl.ac.uk/1468566/.

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To imitate the way electrical components evolved from discrete devices to devices integrated on Si platform, the next stage for integrated circuits is to integrate photonic components with electrical components on one chip, with active devices known as optoelectronic integrated circuits (OEIC). An ideal solution for this would be to have an all-Si laser. However due to the indirect bandgap of Si this is difficult to achieve. Therefore attention has been focused on trying to integrate the existing and mature III-V laser technology with Si. The difference in lattice constant between GaAs and Si makes direct, monolithic growth of GaAs on Si difficult due to the generation of high defect densities. But the advances in quantum dot (QD) technology and in III-V buffer layer techniques have led to the improvements of direct growth integration. In this thesis an AlAs nucleation layer (NL) in the place of a GaAs nucleation layer was found to increase the photoluminescence intensity and reduce defect density in active layers. Lasers were fabricated with lower threshold current densities than similar devices with GaAs NL. Lasing operation at 1.28 μm was achieved up to 63 °C with a threshold current density of 675 A/cm2 at room temperature. In addition, Ge-on-Si substrates have been used to demonstrate the lasers on Si substrates with a very low pulsed threshold current density of 64 A/cm2, which is significantly lower than any other laser integrated with Si substrates. Also this was the first demonstration of a CW laser on Si with a threshold current density of 163 A/cm2. Lasers were operated up to 30 °C for CW devices and 84 °C for pulsed devices. The difference in threshold currents and temperature performance between CW and pulsed operation is due to high device resistances caused by a combination of poor contact resistance and the introduction of defects from the Si/Ge interface. In conclusion, lasers on Si substrates have been fabricated with low threshold current densities. A very low threshold current density of 64 A/cm2 has been achieved with a Ge-on-Si device and is the lowest result for any type of Si laser at the time of writing, which shows good potential for future integration with Si electronics.
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Bruhn, Benjamin. "Fabrication and characterization of single luminescing quantum dots from 1D silicon nanostructures." Doctoral thesis, KTH, Mikroelektronik och tillämpad fysik, MAP, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-102524.

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Silicon as a mono-crystalline bulk semiconductor is today the predominant material in many integrated electronic and photovoltaic applications. This has not been the case in lighting technology, since due to its indirect bandgap nature bulk silicon is an inherently poor light emitter.With the discovery of efficient light emission from silicon nanostructures, great new interest arose and research in this area increased dramatically.However, despite more than two decades of research on silicon nanocrystals and nanowires, not all aspects of their light emission mechanisms and optical properties are well understood, yet.There is great potential for a range of applications, such as light conversion (phosphor substitute), emission (LEDs) and harvesting (solar cells), but for efficient implementation the underlying mechanisms have to be unveiled and understood.Investigation of single quantum emitters enable proper understanding and modeling of the nature and correlation of different optical, electrical and geometric properties.In large numbers, such sets of experiments ensure statistical significance. These two objectives can best be met when a large number of luminescing nanostructures are placed in a pattern that can easily be navigated with different measurement methods.This thesis presents a method for the (optional) simultaneous fabrication of luminescent zero- and one-dimensional silicon nanostructuresand deals with their structural and optical characterization.Nanometer-sized silicon walls are defined by electron beam lithography and plasma etching. Subsequent oxidation in the self-limiting regime reduces the size of the silicon core unevenly and passivates it with a thermal oxide layer.Depending on the oxidation time, nanowires, quantum dots or a mixture of both types of structures can be created.While electron microscopy yields structural information, different photoluminescence measurements, such as time-integrated and time-resolved imaging, spectral imaging, lifetime measurements and absorption and emission polarization measurements, are used to gain knowledge about optical properties and light emission mechanisms in single silicon nanocrystals.The fabrication method used in this thesis yields a large number of spatially separated luminescing quantum dots randomly distributed along a line, or a slightly smaller number that can be placed at well-defined coordinates. Single dot measurements can be performed even with an optical microscope and the pattern, in which the nanostructures are arranged, enables the experimenter to easily find the same individual dot in different measurements.Spectral measurements on the single dot level reveal information about processes that are involved in the photoluminescence of silicon nanoparticles and yield proof for the atomic-like quantized nature of energy levels in the conduction and valence band, as evidenced by narrow luminescence lines (~500 µeV) at low temperature. Analysis of the blinking sheds light on the charging mechanisms of oxide-capped Si-QDs and, by exposing exponential on- and off-time distributions instead of the frequently observed power law distributions, argues in favor of the absence of statistical aging. Experiments probing the emission intensity as a function of excitation power suggest that saturation is not achieved. Both absorption and emission of silicon nanocrystals contained in a one-dimensional silicon dioxide matrix are polarized to a high degree. Many of the results obtained in this work seem to strengthen the arguments that oxide-capped silicon quantum dots have universal properties, independently of the fabrication method, and that the greatest differences between individual nanocrystals are indeed caused by individual factors like local environment, shape and size (among others).

QC 20120920

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Duan, Jianan. "Dynamic and nonlinear properties of quantum dot lasers for photonic integrated circuits on silicon." Electronic Thesis or Diss., Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLT050.

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La photonique sur silicium permet de palier au faible rendement et la consommation énergétique élevée des liens télécoms exploitant les câbles à paires torsadées ou les câbles coaxiaux. Cette technologie offre une versatilité exceptionnelle, de nouvelles fonctionnalités et des performances accrues pour les communications à haut-débit, les systèmes d’interconnexions optiques à courte portée et le déploiement de liaisons optiques d’une puce à une autre, d’une carte à une autre, ou d’un rack à un autre (datacom). Le silicium est un matériau semi-conducteur très efficace pour le guidage de la lumière, notamment en raison du fort contraste d’indice avec la silice. Cependant, sa bande interdite indirecte ne permet pas une émission radiative efficace. La réalisation de lasers repose donc sur des technologies hybrides de collage ou de report du matériau actif III- V (wafer-bonding, flip-chip) sur le silicium passif. Cependant, cette intégration hétérogène présente des inconvénients comme par exemple un coût élevé et une évolutivité limitée. Les lasers hybrides sur silicium sont aussi plus sensibles aux réflexions parasites provenant des transitions des différentes interfaces passives/actives. Un moyen permettant de surmonter ces inconvénients consiste à faire croître directement le matériau III-V sur le silicium. Dans ce contexte, les lasers à boîtes quantiques utilisant des atomes semi-conducteurs comme milieu de gain sont des candidats très prometteurs en raison de leur compacité, de leur grande stabilité thermique et d’une tolérance accrue aux défauts structuraux. Certaines applications comme les systèmes cohérents, les futures horloges atomiques intégrées sur puces et les radars où la sensibilité aux bruits de fréquence et d’intensité influe fortement le taux d’erreur binaire requièrent l’utilisation d’émetteurs optiques à très faible bruit. Dans une première partie, cette thèse révèle le potentiel de lasers à boîtes quantiques InAs/InP présentant une largeur de raie spectrale intrinsèque de 80 kHz et un bruit relatif d’intensité inférieur à -150 dB/Hz. A cet effet, il est montré qu’un faible couplage vertical entre les états liés est plus approprié pour une réduction du bruit d’intensité notamment grâce à la suppression du bruit de porteurs associée à l’état excité. Dans une deuxième partie, les propriétés dynamiques et non- linéaires des lasers à boîtes quantiques directement épitaxiés sur silicium sont étudiées. Comme susmentionné, les lasers intégrés de manière hétérogène sur le silicium sont plus sensibles aux réflexions parasites. Combinées à une rétroaction optique externe, la stabilité du laser peut s’en trouver fortement affectée. Sachant qu’il n’existe pas à ce jour d’isolateurs optiques intégrés sur puce ayant un taux d’isolation suffisant, le développement d’émetteurs insensibles aux rétroactions est un objectif majeur. Cette thèse présente notamment un résultat de transmission sans erreur à partir d’un laser à boîtes quantique directement épitaxié sur silicium soumis à une modulation externe à 10 Gb/s ainsi qu’à une rétroaction optique maximale de 100%. Cette insensibilité aux réflexions résulte de plusieurs propriétés remarquables comme un facteur d’élargissement spectral proche de zéro, un facteur d’amortissement élevé, un fort contraste entre les seuils d’émission des états liés, et une durée de vie des porteurs plus courte. Ces résultats permettent d’envisager le développement de futurs circuits intégrés photoniques sur silicium à haute performance et fonctionnant sans isolateur optique
Silicon photonics have been introduced to overcome low efficiency and high energy consumption of telecom links using twisted pairs or coaxial cables. This technology provides novel functionality and high performance for applications in high speed communication systems, short reach optical interconnects, and the deployment of optical links from chipto-chip, board-to-board or rack-to-rack (datacom). Silicon is known as a very efficient semiconductor material for waveguiding light in particular owing to the strong index contrast with silica. However, the indirect bandgap of silicon makes light emission from silicon inefficient, and other techniques such as wafer- or flipchip bonding must be investigated if light emission is to be realized. The drawbacks of such heterogeneous integration concentrate on the high cost and the limited scalability. Lasers heterogeneously integrated on silicon are also more sensitive to optical reflections originating from the transition between passive/active interfaces. The best way to overcome these drawbacks is to move on to direct epitaxial growth of IIIV materials on silicon for photonics integration. In this context, quantum dot lasers using semiconductor atoms as a gain medium are ideal because they enable smaller devices, amplification with large thermal stability and high tolerance to epitaxial defects. Ultra-low noise optical transmitters are required not only for the coherent systems but also for future chipscale atomic clocks and radar related applications because of the sensitivity to the frequency noise and intensity noise can strongly affect the bit error rates. To this end, the first part of the thesis reports an intrinsic spectral linewidth as low as 80 kHz and a relative intensity noise less than - 150 dB/Hz in InAs/InP quantum dot lasers. In particular, it is shown that a small vertical coupling is more suitable for low intensity noise operation due to the suppression of the carrier noise in the excited state. The second part of the thesis investigates the dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon. As mentioned above, lasers heterogeneously integrated on silicon are more sensitive to parasitic reflections. When combined with external optical feedback, the laser stability can be dramatically affected. As no on-chip optical isolators integrated with lasers and having sufficient isolation ratio exist, the development of feedback insensitive transmitters remains a major objective. This thesis presents an error-free transmission of an epitaxial quantum dot laser on silicon externally modulated at 10 Gb/s and subjected to 100% optical feedback. Such remarkable feedback insensitivity directly results from the near-zero linewidth enhancement factor, the large damping factor, the strong contrast between the ground state and excited states and a shorter carrier lifetime. These results pave the way for future high-performance photonics integrated circuits on silicon operating without optical isolators
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Lin, Y. P. "VLSI compatible parallel fabrication and characterisation of down-scaled multi-configuration silicon quantum dot devices." Thesis, University of Southampton, 2014. https://eprints.soton.ac.uk/363299/.

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Electron spins in semiconductor quantum dots (QDs) have been increasingly shown in recent years to be a promising platform for realising the qubit – the basic unit of information in quantum computing. A crucial advantage of silicon QDs over alternative platforms is the potential for scalability in a quantum system to contain large numbers of qubits. Electron spins in Si-based QDs also have the benefit of a much longer spin coherence time relative to their extensively researched GaAs based counter parts – a prerequisite which gives the essential time needed for successful quantum gate operations and quantum computations. In this work, we propose and realise the first very large scale integration (VLSI) compatible process capable of fabricating scalable repeatable QD systems in parallel using silicon on insulator (SOI) technology. 3D finite element method (FEM) capacitance and single electron circuit simulations are first utilised to demonstrate the suitability of our double quantum dot (DQD) design dimensions in supporting single electron operation and detection. Here, we also present a new method of detection for single electron turnstile operations which makes use of the periodicity present in the charge stability diagram of a DQD. Through process optimisation, we fabricate 144 high density lithographically defined Si DQDs for the first time in parallel with 80% of the fabricated devices having dimensional variations of less than 5 nm. The novel use of hydrogen silsesquioxane (HSQ) resist with electron beam lithography (EBL) enabled the realisation of lithographically defined reproducible QD dimensions of an average of 51 nm with a standard deviation of 3.4 nm. Combined with an optimised thermal oxidation process, we demonstrate the precise fabrication of different QDs ranging from just 10.6 nm to over 20 nm. These are the smallest lithographically defined high density intrinsic SOI based QDs achieved to date. In addition, we demonstrate the flexibility of our fabrication process in its ability to realise a wide variety of complex device designs repeatedly. A key advantage of our process is its ability to support the scalable fabrication of QD devices without significantly affecting fabrication turnover time. Repeatable characteristic QD Coulomb oscillations and Coulomb diamonds signifying single electron tunnelling through our system are observed in electrical characteristics. Here we achieve precise independent simultaneous control of different QD’s single electron occupation as well as demonstrate evidence suggesting charge detection between QD channels. The unmatched level of clarity observed within Coulomb blockade diamond characteristics at 4.2K enables observations of line splitting of our QD’s excited states at this temperature, and readout of the spin orientation of sequential single electrons filling the QD. Through this spin readout, we gained an idea of the number of electrons stored on the QD and in turn, our ability to control the QD with precision down to the single electron limit. Statistically, we realise a parallel fabrication yield of 69% of devices demonstrating the ability to switch on and off repeatedly at 4K cryogenic temperatures with no leakage and sufficient channel resistances for single electron turnstile operations. This is the highest achieved yield observed to date for fabrication of intrinsic SOI based QD systems.
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Cheriton, Ross. "Design and Characterization of InGaN/GaN Dot-in-Nanowire Heterostructures for High Efficiency Solar Cells." Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/37905.

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Light from the sun is an attractive source of energy for its renewability, supply, scalability, and cost. Silicon solar cells are the dominant technology of choice for harnessing solar energy in the form of electricity, but the designs are approaching their practical efficiency limits. New multijunction designs which use the tunable properties of the more expensive III-V semiconductors have historically been relegated to space applications where absolute power conversion efficiency, resilience to radiation, and weight are more important considerations than cost. Some of the more recent developments in the field of semiconductor materials are the so-called III-nitride materials which mainly use either indium, aluminum or gallium in combination with nitrogen. Indium gallium nitride (InGaN) is one of these III-nitride semiconductor alloys that can be tailored to span the vast majority of the solar spectrum. While InGaN growth traditionally requires expensive substrate materials such as sapphire, three-dimensional nanowire growth modes enable high quality lattice mismatched growth of InGaN directly on silicon without a metamorphic buffer layer. The absorption and electronic properties of InGaN can also be tuned by incorporating it into quantum confined regions in a GaN host material. This opens up a route towards cost-effective, high efficiency devices such as light emitted diodes and solar cells which can operate over a large range of wavelengths. The combination of the two material systems of InGaN/GaN and silicon can marry the low cost of silicon wafers with the desirable optoelectronic properties of III-nitride semiconductors. This thesis investigates the potential for highly nanostructured InGaN/GaN based devices using quantum-dot-in-nanowire designs as novel solar cells which can enable intermediate band absorption effects and multiple junctions within a single nanowire to absorb more of the solar spectrum and operating more efficiently. Such semiconductor nanostructures can in principle reach power conversion efficiencies of over 40\% on silicon, with a cost closer to conventional silicon solar cells as opposed to methods which use non-silicon substrates. In the primary strategy, the nanowires contain InGaN quantum dots which act as photon absorption/carrier generation centres to sequentially excite photons within the large band gap semiconductor. By using this intermediate band of states, large operating voltages between contacts can be maintained without sacrificing the collection of long wavelength solar photons. In this work, we characterize the properties of such nanowires and experimentally demonstrate sub-bandgap current generation in a large area InGaN/GaN dot-in-nanowire solar cell. Experimental characterization of InGaN / GaN quantum dots in nanowires as both LEDs and solar cells is performed to determine the nanowire material parameters to understand how they relate to the nanowire device performance. Multiple microscopy techniques are performed to determine the nanowire morphology and contact effectiveness. Optical characterization of bare and fabricated nanowires is used to determine the anti-reflection properties of nanowire arrays. Photoluminescence and electroluminescence spectroscopy are performed. Illuminated current-voltage characteristics and quantum efficiencies are determined. Specular and diffuse reflectivities are measured as a function of wavelength. Technology computer-aided design (TCAD) software is used to simulate the performance of the overall nanowire device. The contribution from quantum dots or quantum wells is simulated by solving for the carrier wavefunctions and density of states with the quantum structures. The discretized density of states from the quantum dots is modelled and used in a complete drift-diffusion device simulation to reproduce electroluminescence results. The carrier transport properties are modified to demonstrate effects on the overall device performance. An alternate design is also proposed which uses an InGaN nanowire subcell on top of a silicon bottom subcell. The dual-junction design allows a broader absorption of the solar spectrum, increasing the operating voltage through monolithically grown series-connected, current-matched subcells. The performance of such a cell is simulated through drift-diffusion simulations of a dual-junction InGaN/Si solar cell. The effects of switching to a nanowire subcell based on the nanowires studied in this thesis is discussed.
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Books on the topic "Silicon Quantum Dot"

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W, Koch S., ed. Semiconductor quantum dots. Singapore: World Scientific, 1993.

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Narlikar, A. V., and Y. Y. Fu, eds. Oxford Handbook of Nanoscience and Technology. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.001.0001.

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This volume highlights engineering and related developments in the field of nanoscience and technology, with a focus on frontal application areas like silicon nanotechnologies, spintronics, quantum dots, carbon nanotubes, and protein-based devices as well as various biomolecular, clinical and medical applications. Topics include: the role of computational sciences in Si nanotechnologies and devices; few-electron quantum-dot spintronics; spintronics with metallic nanowires; Si/SiGe heterostructures in nanoelectronics; nanoionics and its device applications; and molecular electronics based on self-assembled monolayers. The volume also explores the self-assembly strategy of nanomanufacturing of hybrid devices; templated carbon nanotubes and the use of their cavities for nanomaterial synthesis; nanocatalysis; bifunctional nanomaterials for the imaging and treatment of cancer; protein-based nanodevices; bioconjugated quantum dots for tumor molecular imaging and profiling; modulation design of plasmonics for diagnostic and drug screening; theory of hydrogen storage in nanoscale materials; nanolithography using molecular films and processing; and laser applications in nanotechnology. The volume concludes with an analysis of the various risks that arise when using nanomaterials.
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Book chapters on the topic "Silicon Quantum Dot"

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Sugimoto, Hiroshi, and Minoru Fujii. "Silicon Quantum Dot Composites for Nanophotonics." In Micro- and Nanophotonic Technologies, 233–46. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527699940.ch10.

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Liu, Huiyun. "III–V Quantum-Dot Materials and Devices Monolithically Grown on Si Substrates." In Silicon-based Nanomaterials, 357–80. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_14.

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Laref, A. "Optoelectronic Characteristics of Passivated and Non-passivated Silicon Quantum Dot." In Advances in Silicon Solar Cells, 25–52. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69703-1_2.

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Tsu, R., and D. Babić. "Doping of a quantum dot and self-limiting effect in electrochemical etching." In Porous Silicon Science and Technology, 111–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03120-9_7.

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Samukawa, Seiji. "Fabrication of three-dimensional Si quantum dot array by fusion of biotemplate and neutral beam etching." In Silicon Nanomaterials Sourcebook, 87–106. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-5.

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Ledentsov, N. N. "Si-Ge Quantum Dot Laser: What Can We Learn From III-V Experience?" In Towards the First Silicon Laser, 281–92. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_24.

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Metri, Ashwini A., T. S. Rani, and Preeta Sharan. "A Simulation Study of Design Parameter for Quantum Dot-Based Solar Cells." In Silicon Photonics & High Performance Computing, 131–38. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-7656-5_15.

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Ambika, G., G. M. Shanthala, Preeta Sharan, and Srinivas Talabattula. "An Optimized Design of Complex Multiply-Accumulate (MAC) Unit in Quantum Dot Cellular Automata (QCA)." In Silicon Photonics & High Performance Computing, 95–102. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-7656-5_11.

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Heidarzadeh, Hamid, Ghassem Rostami, Mahboubeh Dolatyari, and Ali Rostami. "Comparison the Effect of Size and Inter-dot Spaces in Different Matrix Embedded Silicon Quantum Dots for Photovoltaic Applications." In 2nd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2014), 77–83. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-16901-9_10.

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Romano, Francesco, Yixuan Yu, Brian A. Korgel, Giacomo Bergamini, and Paola Ceroni. "Light-Harvesting Antennae Based on Silicon Nanocrystals." In Photoactive Semiconductor Nanocrystal Quantum Dots, 89–106. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-51192-4_4.

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Conference papers on the topic "Silicon Quantum Dot"

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Giesz, Valérian, Niccolo Somaschi, Lorenzo De Santis, Simone Luca Portalupi, Christophe Arnold, Olivier Gazzano, Anna Nowak, et al. "Quantum dot based quantum optics." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/iprsn.2015.is4a.3.

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Shunri Oda. "Silicon quantum dot devices." In 2008 26th International Conference on Microelectronics (MIEL 2008). IEEE, 2008. http://dx.doi.org/10.1109/icmel.2008.4559218.

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Reithmaier, Johann Peter, and Gadi Eisenstein. "InP-Based Quantum Dot Lasers." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/iprsn.2017.itu2a.1.

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Oda, S., S. y. Huang, M. A. Salem, D. Hippo, A. Tanaka, Y. Tsuchiya, and H. Mizuta. "Nanocrystalline Silicon Quantum Dot Devices." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306657.

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Liu, Alan Y., Chong Zhang, Arthur C. Gossard, and John E. Bowers. "Quantum dot lasers on silicon." In 2014 IEEE 11th International Conference on Group IV Photonics. IEEE, 2014. http://dx.doi.org/10.1109/group4.2014.6961926.

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Kodera, Tetsuo. "Silicon quantum dot devices for spin-based quantum computing." In 2020 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2020. http://dx.doi.org/10.1109/snw50361.2020.9131665.

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Mangolini, Lorenzo, Elijah Thimsen, and Uwe Kortshagen. "High-Yield Plasma Synthesis of Luminescent Silicon Quantum Dots." In ASME 4th Integrated Nanosystems Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/nano2005-87067.

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Crystalline silicon quantum dots are of interest for a variety of applications from solid state lighting, to optoelectronic devices, to use as fluorescent tagging agents. Compared to other quantum dot materials, silicon’s appeal lies in its low toxicity and environmental hazard, and its compatibility with silicon technology used for microelectronics.
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Kamioka, J., T. Kodera, K. Horibe, Y. Kawano, and S. Oda. "Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot." In 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243288.

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Vučković, Jelena, Arka Majumdar, Kelley Rivoire, Erik Kim, Andrei Faraon, Dirk Englund, Ilya Fushman, Hyochul Kim, and Pierre Petroff. "Quantum dot-nanocavity devices for information processing." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/iprsn.2010.ima1.

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Kanemitsu, Yoshihiko. "Silicon quantum dot optoelectronics: Status and future challenges." In 2014 Silicon Nanoelectronics Workshop (SNW). IEEE, 2014. http://dx.doi.org/10.1109/snw.2014.7348534.

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Reports on the topic "Silicon Quantum Dot"

1

Krishnamurthy, Mohan. Assembly of Ge Quantum-Dots on Silicon: Applications to Nanoelectronics. Fort Belvoir, VA: Defense Technical Information Center, November 2000. http://dx.doi.org/10.21236/ada386720.

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Ward, Daniel Robert. Option 1: Qubits in Gate-Defined Silicon Quantum Dots UW/Delft/Harvard/SNL Collaboration. Office of Scientific and Technical Information (OSTI), January 2020. http://dx.doi.org/10.2172/1596528.

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