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Journal articles on the topic 'Silicon Quantum Dot'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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1

Parthasarathy, Barath, Pial Mirdha, Jun Kondo, and Faquir Jain. "Dual Quantum Dot Superlattice." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840003. http://dx.doi.org/10.1142/s0129156418400037.

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In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transistor (QDG-FET).

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2

Luna-Sánchez, Rosa María, and Ignacio González-Martínez. "Nanocrystalline Silicon Quantum Dot Devices." ECS Transactions 2, no. 1 (December 21, 2019): 147–55. http://dx.doi.org/10.1149/1.2193883.

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3

Cho, Eun-Chel, Sangwook Park, Xiaojing Hao, Dengyuan Song, Gavin Conibeer, Sang-Cheol Park, and Martin A. Green. "Silicon quantum dot/crystalline silicon solar cells." Nanotechnology 19, no. 24 (May 9, 2008): 245201. http://dx.doi.org/10.1088/0957-4484/19/24/245201.

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4

Dvurechenskii, Anatoly, Andrew Yakimov, Victor Kirienko, Alekcei Bloshkin, Vladimir Zinovyev, Aigul Zinovieva, and Alexander Mudryi. "Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures." Defect and Diffusion Forum 386 (September 2018): 68–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.68.

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New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

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5

Kondo, Jun, Pial Mirdha, Barath Parthasarathy, Pik-Yiu Chan, Bander Saman, Faquir Jain, and Evan Heller. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.

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Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots provide higher electron mobility than conventional poly-silicon FETs, and mobility values comparable to conventional FETs using single crystalline silicon.

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6

Pokutnyi, Sergey I., and Lucjan Jacak. "Intensity of Radiative Recombination in the Germanium/Silicon Nanosystem with Germanium Quantum Dots." Crystals 11, no. 3 (March 11, 2021): 275. http://dx.doi.org/10.3390/cryst11030275.

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It is shown that in a germanium/silicon nanosystem with germanium quantum dots, the hole leaving the germanium quantum dot causes the appearance of the hole energy level in the bandgap energy in a silicon matrix. The dependences of the energies of the ground state of a hole and an electron are obtained as well as spatially indirect excitons on the radius of the germanium quantum dot and on the depth of the potential well for holes in the germanium quantum dot. It is found that as a result of a direct electron transition in real space between the electron level that is located in the conduction band of the silicon matrix and the hole level located in the bandgap of the silicon matrix, the radiative recombination intensity in the germanium/silicon nanosystem with germanium quantum dots increases significantly.

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7

Eriksson, Mark A., Mark Friesen, Susan N. Coppersmith, Robert Joynt, Levente J. Klein, Keith Slinker, Charles Tahan, P. M. Mooney, J. O. Chu, and S. J. Koester. "Spin-Based Quantum Dot Quantum Computing in Silicon." Quantum Information Processing 3, no. 1-5 (October 2004): 133–46. http://dx.doi.org/10.1007/s11128-004-2224-z.

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8

Hsieh, You-Da, Ming-Way Lee, and Gou-Jen Wang. "Sb2S3Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode." International Journal of Photoenergy 2015 (2015): 1–10. http://dx.doi.org/10.1155/2015/213858.

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We propose a novel quantum-dot sensitized solar cell (QDSSC) structure that employs a quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode. We replaced the backlight input mode with top-side illumination and used a quantum dot to replace dye as the light-absorbing material. Photon-excited photoelectrons can be effectively transported to each silicon nanorod and conveyed to the counter electrode. We use two-stage metal-assisted etching (MAE) to fabricate the micro-nano hybrid structure on a silicon substrate. We then use the chemical bath deposition (CBD) method to synthesize a Sb2S3quantum dot on the surface of each silicon nanorod to form the photoelectrode for the quantum dot/semiconductor silicon coaxial nanorod array. We use a xenon lamp to simulate AM 1.5 G (1000 W/m2) sunlight. Then, we investigate the influence of different silicon nanorod arrays and CBD deposition times on the photoelectric conversion efficiency. When an NH (N-type with high resistance) silicon substrate is used, the QD/Si coaxial nanorod array synthesized by three runs of Sb2S3deposition shows the highest photoelectric conversion efficiency of 0.253%. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 5.19 mA/cm2, 0.24 V, and 20.33%, respectively.

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9

Xu, Zhiyang, Hao Zhang, Chao Chen, Gohar Aziz, Jie Zhang, Xiaoxia Zhang, Jinxiang Deng, Tianrui Zhai, and Xinping Zhang. "A silicon-based quantum dot random laser." RSC Advances 9, no. 49 (2019): 28642–47. http://dx.doi.org/10.1039/c9ra04650j.

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10

Khoury, M., M. J. Rack, A. Gunther, and D. K. Ferry. "Spectroscopy of a silicon quantum dot." Applied Physics Letters 74, no. 11 (March 15, 1999): 1576–78. http://dx.doi.org/10.1063/1.123621.

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11

Thiessen, Alyxandra N., Lijuan Zhang, Anton O. Oliynyk, Haoyang Yu, Kevin M. O’Connor, Alkiviathes Meldrum, and Jonathan G. C. Veinot. "A Tale of Seemingly “Identical” Silicon Quantum Dot Families: Structural Insight into Silicon Quantum Dot Photoluminescence." Chemistry of Materials 32, no. 16 (June 29, 2020): 6838–46. http://dx.doi.org/10.1021/acs.chemmater.0c00650.

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12

Huang, Jie, Jian Liang Jiang, and Abdelkader Sabeur. "Application of Finite Difference Method in Modeling Quantum Dot Superlattice Silicon Tandem Solar Cell." Advanced Materials Research 898 (February 2014): 249–52. http://dx.doi.org/10.4028/www.scientific.net/amr.898.249.

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In this paper we propose an effective method to model quantum dot superlattice silicon tandem solar cell. The Schrödinger equation is solved through finite difference method (FDM) to calculate energy band of three-dimensional silicon quantum dots embedded in the matrix of SiO2 and Si3N4.We simulate the quantum dot superlattice as regularly spaced array of equally sized cubic dots in respective matrix. For simplicity, we consider only one period of the structure in calculation. From the result, the effects of matrix material, dot size and inter-dot distance on the bandgap are obtained.

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13

Grillot, Frédéric, Justin C. Norman, Jianan Duan, Zeyu Zhang, Bozhang Dong, Heming Huang, Weng W. Chow, and John E. Bowers. "Physics and applications of quantum dot lasers for silicon photonics." Nanophotonics 9, no. 6 (June 6, 2020): 1271–86. http://dx.doi.org/10.1515/nanoph-2019-0570.

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AbstractPhotonic integrated circuits (PICs) have enabled numerous high performance, energy efficient, and compact technologies for optical communications, sensing, and metrology. One of the biggest challenges in scaling PICs comes from the parasitic reflections that feed light back into the laser source. These reflections increase noise and may cause laser destabilization. To avoid parasitic reflections, expensive and bulky optical isolators have been placed between the laser and the rest of the PIC leading to large increases in device footprint for on-chip integration schemes and significant increases in packaging complexity and cost for lasers co-packaged with passive PICs. This review article reports new findings on epitaxial quantum dot lasers on silicon and studies both theoretically and experimentally the connection between the material properties and the ultra-low reflection sensitivity that is achieved. Our results show that such quantum dot lasers on silicon exhibit much lower linewidth enhancement factors than any quantum well lasers. Together with the large damping factor, we show that the quantum dot gain medium is fundamentally dependent on dot uniformity, but through careful optimization, even epitaxial lasers on silicon can operate without an optical isolator, which is of paramount importance for the future high-speed silicon photonic systems.

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14

Eng, Kevin, Thaddeus D. Ladd, Aaron Smith, Matthew G. Borselli, Andrey A. Kiselev, Bryan H. Fong, Kevin S. Holabird, et al. "Isotopically enhanced triple-quantum-dot qubit." Science Advances 1, no. 4 (May 2015): e1500214. http://dx.doi.org/10.1126/sciadv.1500214.

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Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control of silicon-based devices. A semiconductor spin qubit may be controlled without the use of magnetic fields by using three electrons in three tunnel-coupled quantum dots. Triple dots have previously been implemented in GaAs, but this material suffers from intrinsic nuclear magnetic noise. Reduction of this noise is possible by fabricating devices using isotopically purified silicon. We demonstrate universal coherent control of a triple-quantum-dot qubit implemented in an isotopically enhanced Si/SiGe heterostructure. Composite pulses are used to implement spin-echo type sequences, and differential charge sensing enables single-shot state readout. These experiments demonstrate sufficient control with sufficiently low noise to enable the long pulse sequences required for exchange-only two-qubit logic and randomized benchmarking.

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15

Chan, Pik-Yiu, Murali Lingalugari, Evan Heller, and Faquir Jain. "An Investigation on Quantum Dot Superlattice (QDSL) Diode." International Journal of High Speed Electronics and Systems 23, no. 01n02 (March 2014): 1420004. http://dx.doi.org/10.1142/s0129156414200043.

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A diode with a quantum dot superlattice on silicon has been reported. Step-wise features are shown in the diode output characteristic, which can be explained by the presence of mini-energy bands in the structure. The theory regarding quantum dot superlattice is also presented.

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16

Jang, Bongyong, Katsuaki Tanabe, Satoshi Kako, Satoshi Iwamoto, Tai Tsuchizawa, Hidetaka Nishi, Nobuaki Hatori, et al. "A hybrid silicon evanescent quantum dot laser." Applied Physics Express 9, no. 9 (August 2, 2016): 092102. http://dx.doi.org/10.7567/apex.9.092102.

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17

Kang, Kwon-Chil, Joung-Eob Lee, Jung-Han Lee, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park. "Poly-silicon quantum-dot single-electron transistors." Journal of the Korean Physical Society 60, no. 1 (January 2012): 108–12. http://dx.doi.org/10.3938/jkps.60.108.

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18

Fujii, Minoru, Riku Fujii, Miho Takada, and Hiroshi Sugimoto. "Silicon Quantum Dot Supraparticles for Fluorescence Bioimaging." ACS Applied Nano Materials 3, no. 6 (May 18, 2020): 6099–107. http://dx.doi.org/10.1021/acsanm.0c01295.

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19

Hada, Y., and M. Eto. "Electronic states in silicon quantum dot devices." physica status solidi (c) 2, no. 8 (May 2005): 3035–38. http://dx.doi.org/10.1002/pssc.200460760.

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20

Leobandung, Effendi, Lingjie Guo, and Stephen Y. Chou. "Single hole quantum dot transistors in silicon." Applied Physics Letters 67, no. 16 (October 16, 1995): 2338–40. http://dx.doi.org/10.1063/1.114337.

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21

Zhang, Chong, Di Liang, Geza Kurczveil, Antoine Descos, and Raymond G. Beausoleil. "Hybrid quantum-dot microring laser on silicon." Optica 6, no. 9 (August 30, 2019): 1145. http://dx.doi.org/10.1364/optica.6.001145.

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22

Liu, Hongwu, Toshimasa Fujisawa, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, and Yoshiro Hirayama. "A gate-defined silicon quantum dot molecule." Applied Physics Letters 92, no. 22 (June 2, 2008): 222104. http://dx.doi.org/10.1063/1.2938693.

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23

Liu, Alan Y., Sudharsanan Srinivasan, Justin Norman, Arthur C. Gossard, and John E. Bowers. "Quantum dot lasers for silicon photonics [Invited]." Photonics Research 3, no. 5 (July 15, 2015): B1. http://dx.doi.org/10.1364/prj.3.0000b1.

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24

Lawrie, W. I. L., H. G. J. Eenink, N. W. Hendrickx, J. M. Boter, L. Petit, S. V. Amitonov, M. Lodari, et al. "Quantum dot arrays in silicon and germanium." Applied Physics Letters 116, no. 8 (February 24, 2020): 080501. http://dx.doi.org/10.1063/5.0002013.

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25

Hao, X. J., E. C. Cho, G. Scardera, Y. S. Shen, E. Bellet-Amalric, D. Bellet, G. Conibeer, and M. A. Green. "Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells." Solar Energy Materials and Solar Cells 93, no. 9 (September 2009): 1524–30. http://dx.doi.org/10.1016/j.solmat.2009.04.002.

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26

Le, Thu-Huong, Dang Thi Thanh Le, and Nguyen Van Tung. "Synthesis of Colloidal Silicon Quantum Dot from Rice Husk Ash." Journal of Chemistry 2021 (March 2, 2021): 1–9. http://dx.doi.org/10.1155/2021/6689590.

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This article describes the synthesis procedure of colloidal silicon quantum dot (Si QDs) from rice husk ash. The silicon quantum dots were capped with 1-octadecene by thermal hydrosilylation under argon gas to obtain octadecyl-Si QDs (ODE-Si QDs). The size separation of ODE-Si QDs was examined by the column chromatography method, which used silica gel (40–63 μm) as the stationary phase. Finally, we obtained two fractions of silicon quantum dot, exhibiting blue emission (B-Si QDs) with an average size of 2.5 ± 0.73 nm and red emission (R-Si QDs) with an average size of 5.1 ± 0.68 nm under a UV lamp (365 nm). The PL spectra of B-Si QDs and R-Si QDs samples show maximum peak energy at 410 nm (3.02 eV) and 700 nm (1.77 eV), respectively, while the quantum yield of Si QDs decreases from 5.8 to 34.6% when the average size decreases from 2.5 nm to 5.1 nm. The above results of PL emission spectroscopy and UV-vis absorption show quantum confined effect in Si QDs.

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27

CHAN, M. Y., and P. S. LEE. "FABRICATION OF SILICON NANOCRYSTALS AND ITS ROOM TEMPERATURE LUMINESCENCE EFFECTS." International Journal of Nanoscience 05, no. 04n05 (August 2006): 565–70. http://dx.doi.org/10.1142/s0219581x06004802.

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Silicon ( Si ) nanocrystals have been considered a good candidate for flash memory device and nanophotonic applications. The fabrication of nanocrystal memory is to form uniform, small size and high density quantum dots. In this study, nanometer-scale silicon quantum dots have been fabricated on ultrathin silicon oxide layer using amorphous silicon (a- Si ) deposition followed by various annealing treatments. The a- Si layers were crystallized using furnace annealing, laser annealing and rapid thermal annealing (RTA). After annealing to form nanometer-sized crystallites, silicon wet etch was carried out to isolate the nanocrystals. The size, uniformity and density of the nanocrystals were successfully controlled by different annealing treatments. The mean dot height and mean dot diameter is 1–5 nm and 2–5 nm, respectively. Lateral growth of the silicon dots was further controlled by systemic variations of the annealing conditions. It is found that the annealed a- Si films exhibit room temperature visible photoluminescence (PL) resulting from the formation of nanometer-sized crystallites. Selective wet etch and Secco-etch treatment increased the PL efficiency that is useful for nanophotonics applications. The feasibility of quantum dot formation using ultra thin amorphous Si films is demonstrated in this work.

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28

Chandrasekaran, Soundarrajan, Thomas J. Macdonald, Yatin J. Mange, Nicolas H. Voelcker, and Thomas Nann. "A quantum dot sensitized catalytic porous silicon photocathode." J. Mater. Chem. A 2, no. 25 (2014): 9478–81. http://dx.doi.org/10.1039/c4ta01677g.

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The fabrication and characterisation of a nano-structured photocathode using indium phosphide QDs and a bio-inspired Fe₂S₂(CO)₆ catalyst sensitized on a p-type porous silicon electrode.

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29

Kondo, Jun, Murali Lingalugari, Pial Mirdha, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Quantum Dot Channel (QDC) Field Effect Transistors (FETs) Configured as Floating Gate Nonvolatile Memories (NVMs)." International Journal of High Speed Electronics and Systems 26, no. 03 (June 27, 2017): 1740015. http://dx.doi.org/10.1142/s0129156417400158.

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This paper presents quantum dot channel (QDC) Field Effect Transistors (FETs) which are configured as nonvolatile memories (NVMs) by incorporating cladded GeOx-Ge quantum dots in the floating gates as well as the transport channels. The current flow and the threshold characteristics were significantly improved when the gate dielectric was changed from silicon dioxide (SiO2) to hafnium aluminum oxide (HfAlO2), and the control dielectric was changed from silicon nitride (Si3N4) to hafnium aluminum oxide (HfAlO2). The device operations are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot transport channel.

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30

Conibeer, Gavin, Martin Green, Eun-Chel Cho, Dirk König, Young-Hyun Cho, Thipwan Fangsuwannarak, Giuseppe Scardera, et al. "Silicon quantum dot nanostructures for tandem photovoltaic cells." Thin Solid Films 516, no. 20 (August 2008): 6748–56. http://dx.doi.org/10.1016/j.tsf.2007.12.096.

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31

Duan, Ruifei, Baoqiang Wang, Zhanping Zhu, and Yiping Zeng. "Silicon Doping Induced Increment of Quantum Dot Density." Japanese Journal of Applied Physics 42, Part 1, No. 10 (October 9, 2003): 6314–18. http://dx.doi.org/10.1143/jjap.42.6314.

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32

Hensen, Bas, Wister Wei Huang, Chih-Hwan Yang, Kok Wai Chan, Jun Yoneda, Tuomo Tanttu, Fay E. Hudson, et al. "A silicon quantum-dot-coupled nuclear spin qubit." Nature Nanotechnology 15, no. 1 (December 9, 2019): 13–17. http://dx.doi.org/10.1038/s41565-019-0587-7.

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33

Nicollian, Edward H., and Raphael Tsu. "Electrical properties of a silicon quantum dot diode." Journal of Applied Physics 74, no. 6 (September 15, 1993): 4020–25. http://dx.doi.org/10.1063/1.354446.

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34

Mertens, Hans, Julie S. Biteen, Harry A. Atwater, and Albert Polman. "Polarization-Selective Plasmon-Enhanced Silicon Quantum-Dot Luminescence." Nano Letters 6, no. 11 (November 2006): 2622–25. http://dx.doi.org/10.1021/nl061494m.

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35

Li, Ruoyu, Luca Petit, David P. Franke, Juan Pablo Dehollain, Jonas Helsen, Mark Steudtner, Nicole K. Thomas, et al. "A crossbar network for silicon quantum dot qubits." Science Advances 4, no. 7 (July 2018): eaar3960. http://dx.doi.org/10.1126/sciadv.aar3960.

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36

Dasog, Mita, and Jonathan G. C. Veinot. "Tuning silicon quantum dot luminescence via surface groups." physica status solidi (b) 251, no. 11 (September 4, 2014): 2216–20. http://dx.doi.org/10.1002/pssb.201400026.

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37

Wan, Yating, Sen Zhang, Justin C. Norman, M. J. Kennedy, William He, Songtao Liu, Chao Xiang, et al. "Tunable quantum dot lasers grown directly on silicon." Optica 6, no. 11 (October 25, 2019): 1394. http://dx.doi.org/10.1364/optica.6.001394.

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38

Sychugov, Ilya, Jan Valenta, and Jan Linnros. "Probing silicon quantum dots by single-dot techniques." Nanotechnology 28, no. 7 (January 13, 2017): 072002. http://dx.doi.org/10.1088/1361-6528/aa542b.

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39

Takeda, Kenta, Jun Kamioka, Tomohiro Otsuka, Jun Yoneda, Takashi Nakajima, Matthieu R. Delbecq, Shinichi Amaha, et al. "A fault-tolerant addressable spin qubit in a natural silicon quantum dot." Science Advances 2, no. 8 (August 2016): e1600694. http://dx.doi.org/10.1126/sciadv.1600694.

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Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor Q (the Rabi oscillation decay time divided by the π rotation time). In isotopically purified silicon quantum dots, only the second approach has been used, leaving the qubit operation slow. We apply the first approach to demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet that is optimally designed for fast spin control. This optimized design allows access to Rabi frequencies up to 35 MHz, which is two orders of magnitude greater than that achieved in previous studies. We find the optimum Q = 140 in such high-frequency range at a Rabi frequency of 10 MHz. This leads to a qubit fidelity of 99.6% measured via randomized benchmarking, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum dot–based qubits. This result can inspire contributions to quantum computing from industrial communities.

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40

Jang, Seunghun, and Moonsup Han. "Formation of silicon quantum dots by RF power driven defect control." RSC Advances 6, no. 91 (2016): 88229–33. http://dx.doi.org/10.1039/c6ra13940j.

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We investigated the turning behavior of luminescence origins from the defect to the silicon quantum dot for silicon nitride (SiNx) films synthesized by changing the applied radio frequency (RF) power in plasma-enhanced chemical vapor deposition.

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41

Choi, Jin-Kyu, Mai Xuan Dung, and Hyun-Dam Jeong. "Novel synthesis of covalently linked silicon quantum dot–polystyrene hybrid materials: Silicon quantum dot–polystyrene polymers of tunable refractive index." Materials Chemistry and Physics 148, no. 1-2 (November 2014): 463–72. http://dx.doi.org/10.1016/j.matchemphys.2014.08.016.

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42

Rashid, Marzaini, Naser M. Ahmed, Nur Afidah Md Noor, and Mohd Zamir Pakhuruddin. "Silicon quantum dot/black silicon hybrid nanostructure for broadband reflection reduction." Materials Science in Semiconductor Processing 115 (August 2020): 105113. http://dx.doi.org/10.1016/j.mssp.2020.105113.

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43

Chen, Qianwang, X.-J. Li, Shuyuan Zhang, Jingsheng Zhu, Guien Zhou, K. Q. Ruan, and Yuheng Zhang. "Silicon quantum dot superlattice and metallic conducting behaviour in porous silicon." Journal of Physics: Condensed Matter 9, no. 41 (October 13, 1997): L569—L572. http://dx.doi.org/10.1088/0953-8984/9/41/002.

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44

Yamada, Hiroyuki, and Naoto Shirahata. "Silicon Quantum Dot Light Emitting Diode at 620 nm." Micromachines 10, no. 5 (May 11, 2019): 318. http://dx.doi.org/10.3390/mi10050318.

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Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m2), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.

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45

Hu, Weiguo, Makoto Igarashi, Ming-Yi Lee, Yiming Li, and Seiji Samukawa. "Realistic quantum design of silicon quantum dot intermediate band solar cells." Nanotechnology 24, no. 26 (June 3, 2013): 265401. http://dx.doi.org/10.1088/0957-4484/24/26/265401.

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46

van Sark, W. G. J. H. M., Celso De Mello Donegá, and Ruud E. I. Schropp. "Optimizing Quantum Dot Solar Concentrators with Thin Film Solar Cells." Advances in Science and Technology 74 (October 2010): 176–81. http://dx.doi.org/10.4028/www.scientific.net/ast.74.176.

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Quantum dots are proposed as luminescent species in luminescent solar concentrators in combination with thin film silicon solar cells. As both tuning absorption and emission properties of quantum dots is possible by adapting process conditions, as well as tuning the band gap of thin film silicon solar cells, an optimum combination is expected to exist for which the conversion efficiency of the whole device is maximum. As a first step we have employed ray-tracing modeling to determine the efficiency of a luminescent concentrator using several quantum dots and heteronanocrystals with varying Stokes’ shift and absorption cross sections. A maximum efficiency of 5.9% is found for so-called Type II heteronanocrystals.

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Zhukov, Alexey E., Natalia V. Kryzhanovskaya, Eduard I. Moiseev, Anna S. Dragunova, Mingchu Tang, Siming Chen, Huiyun Liu, et al. "InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods." Materials 13, no. 10 (May 18, 2020): 2315. http://dx.doi.org/10.3390/ma13102315.

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An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.

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Emiroglu, Emir G., David G. Hasko, and David A. Williams. "Isolated double quantum dot capacitively coupled to a single quantum dot single-electron transistor in silicon." Applied Physics Letters 83, no. 19 (November 10, 2003): 3942–44. http://dx.doi.org/10.1063/1.1626017.

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Ogi, Jun, Mohammad Adel Ghiass, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, Shunri Oda, and Hiroshi Mizuta. "Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation." Japanese Journal of Applied Physics 49, no. 4 (April 20, 2010): 044001. http://dx.doi.org/10.1143/jjap.49.044001.

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50

Sahu, Bibhuti Bhusan, Yongyi Yin, Sven Gauter, Jeon Geon Han, and Holger Kersten. "Plasma engineering of silicon quantum dots and their properties through energy deposition and chemistry." Physical Chemistry Chemical Physics 18, no. 37 (2016): 25837–51. http://dx.doi.org/10.1039/c6cp05647d.

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