Relevant bibliographies by topics / Silicon Semiconductor doping

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Silicon Semiconductor doping'

Author: Grafiati
Published: 4 June 2021
Last updated: 9 February 2022

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Journal articles on the topic "Silicon Semiconductor doping"

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Caccamo, Sebastiano, and Rosaria Anna Puglisi. "Carbon-Free Solution-Based Doping for Silicon." Nanomaterials 11, no. 8 (2021): 2006. http://dx.doi.org/10.3390/nano11082006.

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Molecular doping is a method to dope semiconductors based on the use of liquid solutions as precursors of the dopant. The molecules are deposited on the material, forming a self-ordered monolayer that conforms to the surfaces, whether they are planar or structured. So far, molecular doping has been used with precursors of organic molecules, which also release the carbon in the semiconductor. The carbon atoms, acting as traps for charge carriers, deteriorate the doping efficiency. For rapid and extensive industrial exploitation, the need for a method that removes carbon has therefore been raise
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Bai, Jin Rui, and Rui Xiang Hou. "The Study of Surface Morphology and Roughness of Silicon Wafers Treated by Plasma." Materials Science Forum 980 (March 2020): 88–96. http://dx.doi.org/10.4028/www.scientific.net/msf.980.88.

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Plasma is generally used for the doping of semiconductors. During plasma doping process, plasma interacts with the surface of semiconductor. As a result, defects are induced in the surface region. In this work, the surface morphology and roughness of silicon wafer caused by plasma treatment is studied by use of atom force microscope (AFM). It is found that, during the plasma process, each of the processing time of plasma, location of silicon wafer in plasma and the way of placement of silicon wafer has an influence on the surface morphology and roughness and the reason is discussed. The intera
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Галашев, А. Е., та А. С. Воробьев. "Электронные свойства пленок силицена, подвергнутых нейтронному легированию". Физика и техника полупроводников 54, № 6 (2020): 533. http://dx.doi.org/10.21883/ftp.2020.06.49392.9252.

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Abstract The radiation doping of single-crystal silicon with phosphorus retains the structure of the sample, reduces internal stresses, and increases the lifetime of minority charge carriers. The study is concerned with the effect of phosphorus additives on the electronic properties of silicene. The electron density-of-states spectra of a phosphorus-doped single layer and 2 × 2 bilayer silicene on a graphite substrate are calculated by the quantum-mechanical method. The carbon substrate imparts semiconductor properties to silicene due to p – p hybridization. Doping with phosphorus can retain o
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Lozovskiy, V. N., B. M. Seredin, and N. Yu Arkhipova. "Local Doping of Semiconductor Crystals by Thermomigration." Materials Science Forum 843 (February 2016): 46–51. http://dx.doi.org/10.4028/www.scientific.net/msf.843.46.

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The article includes the analysis of the features related to local doping of silicon using electrically active doping agents by thermomigration of binary and ternary liquid zones as compared to doping by diffusion. The concentration range of doping by binary zone migration is found to be substantially narrower than that of doping by diffusion. Introduction of a third component to the liquid phase ena-bles expansion of the thermomigration doping range to the values exceeding the diffusion doping range by the same doping agent. For silicon crystals, this technological feature of thermomigration
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Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.

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Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fab
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Tavkhelidze, Avtandil, Larissa Jangidze, Zaza Taliashvili, and Nima E. Gorji. "G-Doping-Based Metal-Semiconductor Junction." Coatings 11, no. 8 (2021): 945. http://dx.doi.org/10.3390/coatings11080945.

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Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction has been fabricated and demonstrated with extremely low forward voltage and reduced reverse current. The formation mechanism of p-p(v) junction has been proposed. To obtain G-doping, the surfaces of p-type and p+-type silicon substrates were patterned with nanograting indents of depth d = 30 nm. The Ti/Ag contacts were deposited on top of G-doped layers to form metal-semiconductor junctions. The two-probe method has been used to record the I–V characteristics and the four-p
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Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat
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Yang, Guixia, Kunlin Wu, Jianyong Liu, et al. "Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon." Nanomaterials 10, no. 5 (2020): 886. http://dx.doi.org/10.3390/nano10050886.

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Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect c
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Lishchuk, P. O. "Optimized photoacoustic gas-microphone cell for semiconductor materials thermal conductivity monitoring." Physics and Chemistry of Solid State 22, no. 2 (2021): 321–27. http://dx.doi.org/10.15330/pcss.22.2.321-327.

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An approach for examination of semiconductor materials thermal conductivity based on the photoacoustical (PA) experimental results has been considered. Attention is drawn to the importance of PA cell design and normalization procedure that must be carried out in order to remove the parasitic signal caused by the PA cell effects as well as a contribution from the electronic components. The proposed technique makes it possible to quickly and reliably diagnose the thermal conductivity of various semiconductors materials for a better understanding of the heat transfer there for various technologic
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Perego, Michele, Francesco Caruso, Gabriele Seguini, et al. "Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants." Journal of Materials Chemistry C 8, no. 30 (2020): 10229–37. http://dx.doi.org/10.1039/d0tc01856b.

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Dissertations / Theses on the topic "Silicon Semiconductor doping"

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Randell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.

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Buzzo, Marco. "Dopant imaging and profiling of wide bandgap semiconductor devices /." Konstanz : Hartung-Gorre, 2007. http://www.loc.gov/catdir/toc/fy0715/2007427206.html.

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Woodard, Eric M. "Low temperature dopant activation for applications in thin film silicon devices /." Link to online version, 2006. https://ritdml.rit.edu/dspace/handle/1850/1831.

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Gong, Bin. "Surface reactions, hydride kinetics and in situ boron doping of silicon and germanium /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Goh, Kuan Eng Johnson Physics Faculty of Science UNSW. "Encapsulation of Si:P devices fabricated by scanning tunnelling microscopy." Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/27022.

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This thesis demonstrates the effective use of low temperature molecular beam epitaxy to encapsulate planar Si:P (phosphorus-in-silicon) devices lithographically patterned by scanning tunnelling microscopy (STM) without significant redistribution of the dopants. To achieve this goal, low temperature magnetotransport is used in combination with STM, Auger electron spectroscopy and secondary ion-mass spectrometry to analyse Si:P ??-doped samples fabricated under different doping and growth conditions. An important aspect of this project is the use of large 1 ?? 1 cm2 Si(001) samples which are abo
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Chindanon, Kritsa. "Nitrogen doping in low temperature halo-carbon homoepitaxial growth of 4H-silicon carbide." Master's thesis, Mississippi State : Mississippi State University, 2008. http://library.msstate.edu/etd/show.asp?etd=etd-07102008-045510.

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Mirzakuchaki, Sattar. "Growth and characterization of diamond thin films : effects of substrate pretreatment, doping, and selective deposition /." free to MU campus, to others for purchase, 1996. http://wwwlib.umi.com/cr/mo/fullcit?p9737867.

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Diebel, Milan. "Application of ab-initio calculations to modeling of nanoscale diffusion and activation in silicon /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9727.

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Golestanian, Hassan. "Chemical vapor deposited boron doped polycrystalline diamond thin film growth on silicon and sapphire growth, doping, metallization, and characterization /." free to MU campus, to others for purchase, 1997. http://wwwlib.umi.com/cr/mo/fullcit?p9841292.

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McGarry, Stephen. "Irradiated silicon particle detectors." Thesis, Lancaster University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369468.

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Books on the topic "Silicon Semiconductor doping"

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Baudrant, Annie. Silicon technologies: Ion implantation and thermal treatment. ISTE, 2011.

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Buzzo, Marco. Dopant imaging and profiling of wide bandgap semiconductor devices. Hartung-Gorre, 2007.

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Vollenweider, Kilian. Dopant clustering and diffusion in silicon. Hartung-Gorre, 2010.

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Höfler, Alexander. Development and application of a model hierarchy for silicon process simulation. Hartung-Gorre, 1997.

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International Symposium on Silicon Molecular Beam Epitaxy (6th 1995 Strasbourg, France). Selected topics in group IV and II-VI semiconductors: Proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995. Elsevier, 1996.

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Albers, John. Results of the Monte Carlo calculation of one-and two-dimensional distributions of particles and damage: Ion implanteddopants in silicon. National Bureau of Standards, 1987.

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Albers, John. Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage: Ion implanted dopants in silicon. U.S. Dept. of Commerce, National Bureau of Standards, 1987.

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Baudrant, Annie. Silicon Technologies: Ion Implantation and Thermal Treatment. Wiley & Sons, Incorporated, John, 2013.

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Baudrant, Annie. Silicon Technologies: Ion Implantation and Thermal Treatment. Wiley & Sons, Incorporated, John, 2013.

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Baudrant, Annie. Silicon Technologies: Ion Implantation and Thermal Treatment. Wiley & Sons, Incorporated, John, 2013.

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Book chapters on the topic "Silicon Semiconductor doping"

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Mertens, R. "Heavy Doping Effects and Their Influence on Silicon Bipolar Transistors." In Semiconductor Silicon. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_25.

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Zittel, W. "Simulation of Laser-Assisted Doping of Silicon — The Temperature Distribution." In Semiconductor Silicon. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_5.

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Pyka, W., C. Heitzinger, N. Tamaoki, T. Takase, T. Ohmine, and S. Selberherr. "Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD." In Simulation of Semiconductor Processes and Devices 2001. Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_27.

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Droopad, R., S. D. Parker, E. Skuras, et al. "Parallel and Perpendicular Field Magnetotransport Studies of MBE Grown GaAs Doping Superlattices and Slab Doped InSb Formed by Selective Doping with Silicon." In High Magnetic Fields in Semiconductor Physics II. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_32.

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Street, R. A. "Doping Effects in Amorphous Silicon." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_188.

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Cohen, J. David, Carol E. Michelson, and James P. Harbison. "Junction Capacitance Studies of Hydrogenated Amorphous Silicon Doping Superiattice Films." In Disordered Semiconductors. Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_61.

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Kakalios, J., and R. A. Street. "The Thermal Equilibration Model for Persistent Photoconductivity in Doping Modulated Amorphous Silicon." In Disordered Semiconductors. Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_57.

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Albert, E., A. Möslang, E. Recknagel, and A. Weidinger. "Doping Dependence of the Relaxation of Muonium in Silicon." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_154.

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Yun, C. S., O. K. Kwon, C. G. Hwang, and H. J. Hwang. "Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon." In Simulation of Semiconductor Devices and Processes. Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_25.

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Honeycutt, J. W., and G. A. Rozgonyi. "Dopant Diffusion and Point Defects in Silicon During Silicidation." In Crucial Issues in Semiconductor Materials and Processing Technologies. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_41.

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Conference papers on the topic "Silicon Semiconductor doping"

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Marchevsky, Andrey V., Jesper Mørk, and Kresten Yvind. "Doping technologies for InP membranes on silicon for nanolasers." In Novel In-Plane Semiconductor Lasers XVIII, edited by Alexey A. Belyanin and Peter M. Smowton. SPIE, 2019. http://dx.doi.org/10.1117/12.2509487.

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Park, Sang-Jun, Myong-Seop Kim, Ki-Doo Kang, and In-Cheol Lim. "Characteristics and Operation of Neutron Transmutation Doping in HANARO Reactor." In 17th International Conference on Nuclear Engineering. ASMEDC, 2009. http://dx.doi.org/10.1115/icone17-75141.

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The Neutron Transmutation Doping (NTD) of silicon is a method to produce a high quality n-type semiconductor. The NTD technology makes it possible to dope a silicon ingot with an extremely uniform dopant distribution. Korea Atomic Energy Research Institute (KAERI) has been providing the NTD service for 5 and 6 inch silicon ingots from 2003 and 2005 respectively at using HANARO. Coping with recent market demands for a silicon semiconductor by NTD, an additional irradiation facility which has a potential for the 8 inch silicon ingots was developed and the test irradiation is under way from the e
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Ivanov, Denis, Ilya Marinov, Yuriy Gorbachev, Alexander Smirnov, and Valeria Krzhizhanovskaya. "Computer Simulation of Laser Annealing of a Nanostructured Surface." In ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/detc2009-87087.

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Laser annealing technology is used in mass production of new-generation semiconductor materials and nano-electronic devices like the MOS-based (metal–oxide–semiconductor) integrated circuits. Manufacturing sub-100 nm MOS devices demands application of ultra-shallow doping (junctions), which requires rapid high-temperature annealing to increase dopant electrical activation and remove implantation defects in the silicon [1].
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Heider, Franz, Johannes Baumgartl, Peter Horvath, and Thomas Jaehrling. "Air Gap CV measurement for doping concentration in epitaxial silicon." In 2014 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2014. http://dx.doi.org/10.1109/asmc.2014.6847015.

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Chen, Hui, Xiaoyu Li, Zhengying Wei, Chang Sun, Jiong Xu, and Ming Wang. "Improved Method to Analysis the Doping Profile for Ion Implants in Silicon." In 2021 China Semiconductor Technology International Conference (CSTIC). IEEE, 2021. http://dx.doi.org/10.1109/cstic52283.2021.9461409.

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Li-Lung, Lai, Huimin Gao, and Hong Xiao. "Surface Effect on SEM Voltage Contrast and Dopant Contrast." In ISTFA 2009. ASM International, 2009. http://dx.doi.org/10.31399/asm.cp.istfa2009p0202.

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Abstract The Voltage Contrast (VC) [1-3] and Dopant Contrast [4-7] in Scanning Electron Microscopy (SEM) [8] have been widely used in the Silicon (Si) semiconductor manufacturing field to localize the failure site from plane-view and inspect the doping profile along cross-section with spatial resolution in the nanometer (nm) range. In this article, we demonstrate how the surface effect, such as topography or material variation, impacts the conventional prediction for the voltage and dopant contrast in the SEM images. The mechanisms and applications for the SRAM and real products are described.
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Wittmann, R., A. Hossinger, and S. Selberherr. "Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs." In 2005 International Conference On Simulation of Semiconductor Processes and Devices. IEEE, 2005. http://dx.doi.org/10.1109/sispad.2005.201505.

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Sullivan, William, Cameron Hettler, and James Dickens. "The effects of sub-contact nitrogen doping on silicon carbide photoconductive semiconductor switches." In 2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC). IEEE, 2012. http://dx.doi.org/10.1109/ipmhvc.2012.6518684.

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Ruhstorfer, Daniel, Simon Mejia, Hubert Riedl, Jonathan James Finley, and Gregor Koblmuller. "Vapor-Solid Selective Area Molecular Beam Epitaxy and N-Type Doping of Catalyst-Free GaAs:Si Nanowires on Silicon." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819099.

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Basu, S., B. J. Lee, and Z. M. Zhang. "Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-41266.

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This paper describes an experimental investigation on the infrared radiative properties of heavily-doped silicon (Si) at room temperature. Lightly-doped Si wafers were ion implanted with boron and phosphorus atoms to doping concentrations of 1×1020 and 1×1021 cm−3. Rapid thermal annealing was performed to activate the implanted dopants. A Fourier-transform infrared spectrometer was employed to measure the normal transmittance as well as reflectance of the samples in the spectral region from 2 to 20 μm. Accurate carrier mobility and ionization models were identified after carefully reviewing th
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