Books on the topic 'Silicon Semiconductor doping'
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Baudrant, Annie. Silicon technologies: Ion implantation and thermal treatment. ISTE, 2011.
Find full textBuzzo, Marco. Dopant imaging and profiling of wide bandgap semiconductor devices. Hartung-Gorre, 2007.
Find full textVollenweider, Kilian. Dopant clustering and diffusion in silicon. Hartung-Gorre, 2010.
Find full textHöfler, Alexander. Development and application of a model hierarchy for silicon process simulation. Hartung-Gorre, 1997.
Find full textInternational Symposium on Silicon Molecular Beam Epitaxy (6th 1995 Strasbourg, France). Selected topics in group IV and II-VI semiconductors: Proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995. Elsevier, 1996.
Find full textAlbers, John. Results of the Monte Carlo calculation of one-and two-dimensional distributions of particles and damage: Ion implanteddopants in silicon. National Bureau of Standards, 1987.
Find full textAlbers, John. Results of the Monte Carlo calculation of one- and two-dimensional distributions of particles and damage: Ion implanted dopants in silicon. U.S. Dept. of Commerce, National Bureau of Standards, 1987.
Find full textBaudrant, Annie. Silicon Technologies: Ion Implantation and Thermal Treatment. Wiley & Sons, Incorporated, John, 2013.
Find full textBaudrant, Annie. Silicon Technologies: Ion Implantation and Thermal Treatment. Wiley & Sons, Incorporated, John, 2013.
Find full textBaudrant, Annie. Silicon Technologies: Ion Implantation and Thermal Treatment. Wiley & Sons, Incorporated, John, 2013.
Find full textFair, Richard B., Charles W. Pearce, and Jack Washburn. Impurity Diffusion and Gettering in Silicon: Volume 36. University of Cambridge ESOL Examinations, 2014.
Find full textB, Cowern Nicholas E., ed. Silicon front-end technology--materials processing and modelling. Materials Research Society, 1998.
Find full textB, Fair Richard, Pearce Charles W, Washburn Jack 1921-, Materials Research Society Meeting, and Symposium on Impurity Diffusion and Gettering in Semiconductors (1984 : Boston, Mass.), eds. Impurity diffusion and gettering in silicon: Symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A. Materials Research Society, 1985.
Find full textTomas Diaz De LA Rubia (Editor), Salvatore Coffa (Editor), Peter A. Stolk (Editor), and Conor S. Rafferty (Editor), eds. Defects and Diffusion in Silicon Processing: Symposium Held April 1-4, 1997, San Francisco, California, U.S.A (Materials Research Society Symposia Proceedings, V. 469.). Materials Research Society, 1997.
Find full textDefects and diffusion in silicon processing: Symposium held April 1-4, 1997, San Francisco, California, U.S.A. Materials Research Society, 1997.
Find full textTej Singh, of Research Reactor Services Division, BARC. and Bhabha Atomic Research Centre, eds. Neutron transmutation doping technology of silicon and overview of trial irradiations at cirus reactor. Bhabha Atomic Research Centre, 2007.
Find full textSi Front-End Processing: Physics and Technology of Dopant-Defect Interactions (Materials Research Society Symposium Proceedings). Materials Research Society, 1999.
Find full textL, Gossmann Hans-Joachim, ed. Si front-end processing: Physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A. Materials Research Society, 1999.
Find full text(Editor), Erin C. Jones, Peter A. Stolk (Editor), K. S. Jones (Editor), J. Matsuo (Editor), and M. D. Giles (Editor), eds. Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III: Physics and Technology of Dopant-Defect Interactions III : Symposium ... Symposium Proceedings Series Vol. 669). Materials Research Society, 2001.
Find full textAditya, Agarwal, ed. Si front-end processing: Physics and technology of dopant-defect interactions II : Symposium held April 24-27, 2000, San Francisco, California, USA. Materials Research Society, 2001.
Find full textSi front-end processing: Physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A. Materials Research Society, 2001.
Find full textSi Front-End Processing-Physics and Technology of Dopant-Defect Interactions II: Physics and Technology of Dopant-Defect Interactions II : Symposium Held ... Research Society Symposium Proceedings). Materials Research Society, 2000.
Find full textS, Ginley D., Materials Research Society, Materials Research Society Meeting, and Symposium on Crystalline Oxides on Semiconductors (2002 : Boston, Mass.), eds. Crystalline oxide-silicon heterostructures and oxide optoelectronics: Symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A. Materials Research Society, 2003.
Find full textA, Neugroschel, and United States. National Aeronautics and Space Administration, eds. Heavy doping effects in high efficiency silicon solar cells: Quarterly report for period covering January 1, 1986 - March 31, 1986. National Aeronautics and Space Administration, 1986.
Find full text(Editor), Dale E. Alexander, N. W. Cheung (Editor), Byungwoo Park (Editor), and Wolfgang Skorupa (Editor), eds. Materials Modification and Synthesis by Ion Beam Processing: Symposium Held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium Proceedings). Materials Research Society, 1999.
Find full textJones, Erin C., Kevin S. Jones, Martin D. Giles, Peter Stolk, and Jiro Matsuo. Si Front-End Processing : Volume 669: Physics and Technology of Dopant-Defect Interactions III. University of Cambridge ESOL Examinations, 2014.
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