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Journal articles on the topic 'Silicon Semiconductor doping'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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1

Caccamo, Sebastiano, and Rosaria Anna Puglisi. "Carbon-Free Solution-Based Doping for Silicon." Nanomaterials 11, no. 8 (2021): 2006. http://dx.doi.org/10.3390/nano11082006.

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Molecular doping is a method to dope semiconductors based on the use of liquid solutions as precursors of the dopant. The molecules are deposited on the material, forming a self-ordered monolayer that conforms to the surfaces, whether they are planar or structured. So far, molecular doping has been used with precursors of organic molecules, which also release the carbon in the semiconductor. The carbon atoms, acting as traps for charge carriers, deteriorate the doping efficiency. For rapid and extensive industrial exploitation, the need for a method that removes carbon has therefore been raise

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2

Bai, Jin Rui, and Rui Xiang Hou. "The Study of Surface Morphology and Roughness of Silicon Wafers Treated by Plasma." Materials Science Forum 980 (March 2020): 88–96. http://dx.doi.org/10.4028/www.scientific.net/msf.980.88.

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Plasma is generally used for the doping of semiconductors. During plasma doping process, plasma interacts with the surface of semiconductor. As a result, defects are induced in the surface region. In this work, the surface morphology and roughness of silicon wafer caused by plasma treatment is studied by use of atom force microscope (AFM). It is found that, during the plasma process, each of the processing time of plasma, location of silicon wafer in plasma and the way of placement of silicon wafer has an influence on the surface morphology and roughness and the reason is discussed. The intera

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3

Галашев, А. Е., та А. С. Воробьев. "Электронные свойства пленок силицена, подвергнутых нейтронному легированию". Физика и техника полупроводников 54, № 6 (2020): 533. http://dx.doi.org/10.21883/ftp.2020.06.49392.9252.

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Abstract The radiation doping of single-crystal silicon with phosphorus retains the structure of the sample, reduces internal stresses, and increases the lifetime of minority charge carriers. The study is concerned with the effect of phosphorus additives on the electronic properties of silicene. The electron density-of-states spectra of a phosphorus-doped single layer and 2 × 2 bilayer silicene on a graphite substrate are calculated by the quantum-mechanical method. The carbon substrate imparts semiconductor properties to silicene due to p – p hybridization. Doping with phosphorus can retain o

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4

Lozovskiy, V. N., B. M. Seredin, and N. Yu Arkhipova. "Local Doping of Semiconductor Crystals by Thermomigration." Materials Science Forum 843 (February 2016): 46–51. http://dx.doi.org/10.4028/www.scientific.net/msf.843.46.

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The article includes the analysis of the features related to local doping of silicon using electrically active doping agents by thermomigration of binary and ternary liquid zones as compared to doping by diffusion. The concentration range of doping by binary zone migration is found to be substantially narrower than that of doping by diffusion. Introduction of a third component to the liquid phase ena-bles expansion of the thermomigration doping range to the values exceeding the diffusion doping range by the same doping agent. For silicon crystals, this technological feature of thermomigration

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5

Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.

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Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fab

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6

Tavkhelidze, Avtandil, Larissa Jangidze, Zaza Taliashvili, and Nima E. Gorji. "G-Doping-Based Metal-Semiconductor Junction." Coatings 11, no. 8 (2021): 945. http://dx.doi.org/10.3390/coatings11080945.

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Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction has been fabricated and demonstrated with extremely low forward voltage and reduced reverse current. The formation mechanism of p-p(v) junction has been proposed. To obtain G-doping, the surfaces of p-type and p+-type silicon substrates were patterned with nanograting indents of depth d = 30 nm. The Ti/Ag contacts were deposited on top of G-doped layers to form metal-semiconductor junctions. The two-probe method has been used to record the I–V characteristics and the four-p

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7

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat

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8

Yang, Guixia, Kunlin Wu, Jianyong Liu, et al. "Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon." Nanomaterials 10, no. 5 (2020): 886. http://dx.doi.org/10.3390/nano10050886.

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Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect c

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9

Lishchuk, P. O. "Optimized photoacoustic gas-microphone cell for semiconductor materials thermal conductivity monitoring." Physics and Chemistry of Solid State 22, no. 2 (2021): 321–27. http://dx.doi.org/10.15330/pcss.22.2.321-327.

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An approach for examination of semiconductor materials thermal conductivity based on the photoacoustical (PA) experimental results has been considered. Attention is drawn to the importance of PA cell design and normalization procedure that must be carried out in order to remove the parasitic signal caused by the PA cell effects as well as a contribution from the electronic components. The proposed technique makes it possible to quickly and reliably diagnose the thermal conductivity of various semiconductors materials for a better understanding of the heat transfer there for various technologic

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10

Perego, Michele, Francesco Caruso, Gabriele Seguini, et al. "Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants." Journal of Materials Chemistry C 8, no. 30 (2020): 10229–37. http://dx.doi.org/10.1039/d0tc01856b.

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11

Roccaforte, Fabrizio, Patrick Fiorenza, Marilena Vivona, Giuseppe Greco, and Filippo Giannazzo. "Selective Doping in Silicon Carbide Power Devices." Materials 14, no. 14 (2021): 3923. http://dx.doi.org/10.3390/ma14143923.

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Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to i

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12

Yoo, Hocheon, Keun Heo, Md Hasan Raza Ansari, and Seongjae Cho. "Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications." Nanomaterials 11, no. 4 (2021): 832. http://dx.doi.org/10.3390/nano11040832.

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Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of

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13

Heimbrook, L. A. "Analytical solutions for complex problems using multiple diagnostic techniques." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 686–87. http://dx.doi.org/10.1017/s0424820100139809.

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The ability to apply multiple diagnostic techniques to complex material, biological, and device problems with the goal of obtaining analytical solutions is the daily objective of the typical analytical laboratory. This paper will describe the use of both microscopy and surface analysis diagnostic tools to evaluate routine and highly complex material and device problems often found in the semiconductor industry. The characterization requirements for silicon and III-V materials and devices cover a wide range of technology research and development programs. These programs involve the characteriza

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14

Tilak, Vinayak, Kevin Matocha, and Greg Dunne. "Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers." Materials Science Forum 615-617 (March 2009): 801–4. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.801.

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Silicon Carbide (SiC) based metal oxide semiconductor field effect transistors (MOSFETs) were fabricated and characterized using gated hall measurements with different p-type substrate doping concentration (7.2X1016cm-3 and 2X1017 cm-3). An interface trap state density of 5X1013 cm-2eV-1 was observed nearly 0.1 eV above the conduction band edge leading to the conclusion that these states are present in the silicon dioxide rather than the interface. The Hall mobility of the MOSFETs decreased from 26.5 to 20 cm2/Vs as the doping was increased from 7.2X1016 to 2X1017cm-3. The decrease in mobility

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15

Takaoka, H., M. Tomita, and T. Hayashi. "High-resolution transmission electron microscopic study of highly oxygen doped silicon layer." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 692–93. http://dx.doi.org/10.1017/s0424820100155438.

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High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped sam

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16

Zhu, Bin, Ding Yi, Yuxi Wang, et al. "Self-inhibition effect of metal incorporation in nanoscaled semiconductors." Proceedings of the National Academy of Sciences 118, no. 4 (2021): e2010642118. http://dx.doi.org/10.1073/pnas.2010642118.

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There has been a persistent effort to understand and control the incorporation of metal impurities in semiconductors at nanoscale, as it is important for semiconductor processing from growth, doping to making contact. Previously, the injection of metal atoms into nanoscaled semiconductor, with concentrations orders of magnitude higher than the equilibrium solid solubility, has been reported, which is often deemed to be detrimental. Here our theoretical exploration reveals that this colossal injection is because gold or aluminum atoms tend to substitute Si atoms and thus are not mobile in the l

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17

Haller, Eugene E. "Isotopically Controlled Semiconductors." MRS Bulletin 31, no. 7 (2006): 547–53. http://dx.doi.org/10.1557/mrs2006.141.

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The following article is an edited transcript based on the David Turnbull Lecture given by Eugene E. Haller (University of California, Berkeley) at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his “pioneering achievements and leadership in estab

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18

Tamaddon, Amir Hossein, Harold Philipsen, Paul W. Mertens, et al. "Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping." Solid State Phenomena 219 (September 2014): 89–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.89.

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The wet cleaning process plays an important role in advanced semiconductor industry. Particularly when bare silicon areas are exposed, wafer drying can result in undesired watermark (WM) residues on the surface [1-2]. In principle there are three components effecting the formation, shape and size of WM. 1) composition of the ambient like oxygen concentration, relative humidity and temperature affect WM formation [3]. 2) liquid: factors such as pH and the amount of dissolved species inside the liquid influence the WM composition. 3) substrate: for silicon for instance: surface passivation is im

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19

Sarajlić, M., and R. M. Ramović. "N-Type Silicon Electron Mobility and its Relationship to the Kink Effect for Nano-Scaled SOI NMOS Devices." Materials Science Forum 555 (September 2007): 153–58. http://dx.doi.org/10.4028/www.scientific.net/msf.555.153.

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Electron mobility for the silicon-based devices is one of the most important parameters, which determine the behavior of components. Mobility depends on silicon purity, doping level, presence of lattice defects and electric field in the particular device. These influences are particularly important for the nano-scaled devices since it is much more difficult to control the thickness of the active layer, uniformity of impurity doping and appearance of parasitic bipolar devices and capacitances. We have investigated a relationship between the electron mobility for the silicon based PD (Partially

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20

Dhaka, Kapil, and Debashis Bandyopadhyay. "Magnetism, structures and stabilities of cluster assembled TM@Si nanotubes (TM = Cr, Mn and Fe): a density functional study." Dalton Transactions 45, no. 31 (2016): 12432–43. http://dx.doi.org/10.1039/c6dt01252c.

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Four different types (Type 1 to Type 4) of empty and transition metal (Cr, Mn and Fe) doped silicon nanotubes have been studied. The calculated band structures and DOS assigned them as metallic, semiconductor, semi-metallic and half-metallic depending upon the combination of the type of nanotube and the transition metal doping.

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21

Preduşcă, G., and C. Fluieraru. "Determination of the Lifetime Influence Upon the Conversion Efficiency of the Photovoltaic Silicon Solar Cells." Scientific Bulletin of Electrical Engineering Faculty 17, no. 2 (2017): 20–24. http://dx.doi.org/10.1515/sbeef-2017-0005.

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AbstractIf the electrons and holes in excess are created in a semiconductor, either by means of light absorption, or using other methods, the thermic balance is disturbed, therefore these electrons and holes should be nullified after the source had been stopped. This process is named recombination. There are three main recombination types: radioactive, Auger and deep energy level recombination. All three are based on the doping concentration to a certain point. The life time is determined using the three recombination processes in semiconductor.

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22

Saraniti, M., G. Zandler, G. Formicone, and S. Goodnick. "Cellular Automata Studies of Vertical Silicon Devices." VLSI Design 8, no. 1-4 (1998): 111–15. http://dx.doi.org/10.1155/1998/89897.

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We present systematic theoretical Cellular Automata (CA) studies of a novel nanometer scale Si device, namely vertically grown Metal Oxide Field Effect Transistors (MOSFET) with channel lengths between 65 and 120 nm. The CA simulations predict drain characteristics and output conductance as a function of gate length. The excellent agreement with available experimental data indicates a high quality oxide/semiconductor interface. Impact ionization is shown to be of minor importance. For inhomogeneous p-doping profiles along the channel, significantly improved drain current saturation is predicte

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23

Tchepurnov, V. I. "DISTRIBUTION OF POINT DEFECTS IN THE SI-FAZE INCLUDING SIC-FAZE, FORMED BY ENDOTAXE METHOD OF SEMICONDUCTOR HETEROSTRUCTURES." Vestnik of Samara University. Natural Science Series 18, no. 9 (2017): 164–79. http://dx.doi.org/10.18287/2541-7525-2012-18-9-164-179.

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Heteroepitaxy layers of silicon carbide on silicon substrates is one of the best candidates for high-power, high-temperature and high-frequency applications in electronics. Solid-phase process of endotaxe of silicon carbide is accompanied by evolution of Si-phase into Sic-one in hydrogen hydrocarbon atmosphere at temperature range 1360-1380 °C and normal pressure. The distribution of thermal intrinsic point defects of different nature in silicon substrates in dependence of the type of its conductivity and in conditions of isovalent doping of carbon is investigated in this paper.

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24

Baei, Mohammad T., Saeedeh Hashemian, and Sirous Yourdkhani. "Silicon-doping makes the B12N12 insulator to an n or p-semiconductor." Superlattices and Microstructures 60 (August 2013): 437–42. http://dx.doi.org/10.1016/j.spmi.2013.05.024.

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25

Wang, Qiao Liang, Yu Zhao, Rui Feng Lv, and Yan Yan Zhu. "Measurement of Semiconductor Silicon Wafer’s Doping Concentration and it’s Uniformity Based on Thermo-Needles Method." Applied Mechanics and Materials 239-240 (December 2012): 726–29. http://dx.doi.org/10.4028/www.scientific.net/amm.239-240.726.

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In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of silicon wafer was put forward. The dependen curve of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. With the help of Origin software, slope of curve was obtained.Accoe

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26

Queisser, Hans J. "Order and Disorder in Semiconductors." MRS Bulletin 20, no. 12 (1995): 43–49. http://dx.doi.org/10.1557/s0883769400045899.

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The pervasive impetus of modern semiconductor technology has become an accepted fact. Scientific mastering of materials and processes has increased tremendously within a short time frame. Technological control has been derived from this scientific base. An industry with more than $100 billion worth of silicon devices per annum in 1994 as well as incredibly high growth rates of production and applications is an economic reality in addition to being a matter of international industrial policy. The materials aspect of using perfected single crystals and applying local doping control provides the

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27

Astrov, Yuri A., L. M. Portsel, A. N. Lodygin, V. B. Shuman, and E. V. Beregulin. "Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters." Solid State Phenomena 108-109 (December 2005): 401–6. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.401.

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The work aims at approaching the solution of the problem of developing sensitive silicon detectors for high speed IR imaging devices which are semiconductor – gas discharge systems. Among the requirements to detectors is their operation at the temperature which is somewhat higher than that of liquid nitrogen. To meet this requirement, a set of deep impurities is analyzed. It is emphasized that silicon doped with sulphur is a good choice to reach the aim. The doping of silicon with sulphur is done by the technique of high temperature diffusion. Data of the Hall measurements indicate the presenc

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28

Romero, Maria Teresa, Yuliana Avila Alvarado, Reyes Garcia-Diaz, Carlos Rodriguez Garcia, Raul Ochoa Valiente, and Gregorio H. Cocoletzi. "First Principles Calculations of Graphene Doped with Al, P and Si Heteroatoms." Nano Hybrids and Composites 16 (June 2017): 52–55. http://dx.doi.org/10.4028/www.scientific.net/nhc.16.52.

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In this work, studies of the doping effects on the electronic and structural properties of graphene were performed. Calculations have been done within the periodic density functional theory (DFT) as implemented in PWscf code of the Quantum Espresso Package. Graphene layers have been modeled using the 4x4 periodic supercells. The doping is explored considering phosphorus (P), aluminum (Al) and silicon (Si) heteroatoms. One heteroatom per supercell was considered. Electronic structure results show that the pristine graphene has a linear dispersion at high symmetry K point and zero gap. Band stru

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29

Griswold, E. M., M. Sayer, D. T. Amm, and I. D. Calder. "The influence of niobium-doping on lead zirconate titanate ferroelectric thin films." Canadian Journal of Physics 69, no. 3-4 (1991): 260–64. http://dx.doi.org/10.1139/p91-043.

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Ferroelectric thin films have recently proven viable for nonvolatile memory applications in semiconductor technology. Current research is focused on the development of processing technologies and deposition on metallized semiconductor substrates. In this study, niobium-doped lead zirconate titanate thin films were prepared by a dc magnetron-sputtering technique using a multielement metal target. Films were deposited on indium tin oxide coated glass and on metallizations on silicon substrates. The crystallographic structure and surface morphology of the films was examined by scanning electron m

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30

Noll, Stefan, Martin Rambach, Michael Grieb, Dick Scholten, Anton J. Bauer, and Lothar Frey. "Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors." Materials Science Forum 778-780 (February 2014): 702–5. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.702.

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A high inversion channel mobility is a key parameter of normally off Silicon-Carbide MOS field effect power transistors. The mobility is limited by scattering centers at the interface between the semiconductor and the gate-oxide. In this work we investigate the mobility of lateral normally-off MOSFETs with different p-doping concentrations in the channel. Additionally the effect of a shallow counter n-doping at the interface on the mobility was determined and, finally, the properties of interface traps with the charge pumping method were examined. A lower p-doping in the cannel reduces the thr

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31

Hu, Yue, Hao Wang, De Wen Wang, et al. "A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region." Advanced Materials Research 1096 (April 2015): 514–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1096.514.

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A 600V-class lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) in partial silicon-on-insulator (PSOI) is introduced to improve breakdown voltage (BV) and reduce on-resistance (Ron). The step-doped method induces an electric field peak in the surface of the device, which can reduce the surface field in the device and adjust the doping accommodation in the drift region. The adjusted drift region can allow higher doping concentration under the drain end which results in higher breakdown voltage, and accommodate more impurity atoms

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32

Nishi, Koji, Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, and Tanemasa Asano. "n- and p-Type Doping of 4H-SiC by Wet-Chemical Laser Processing." Materials Science Forum 778-780 (February 2014): 645–48. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.645.

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Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several issues for the SiC. For example, while a high-temperature (~1700 °C) post-implantation annealing is required to electrically activate implanted species [, it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface

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Brebner, J. L., R. W. Cochrane, R. Groleau, et al. "Progress in amorphous-silicon photovoltaic-device research." Canadian Journal of Physics 63, no. 6 (1985): 786–97. http://dx.doi.org/10.1139/p85-127.

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The members of the "Groupe des couches minces" have been studying the application of hydrogenated amorphous-silicon to solar cells for a number of years. We review here some of the results and progress in our work since the First Canadian Semiconductor Technology Conference. These include, first, quantification of the dependence of film characteristics on the deposition parameters such as DC bias, Ar:SiH4 ratio, temperature, and gas flow for the capacitive reactor geometry used; second, construction of a time-of-flight spectrometer permitting mass resolution of elastically scattered or recoili

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34

Blagin, A. V., N. A. Nefedova, and B. M. Seredin. "Physical Aspects of the Liquid Zones Thermomigration Method for Formation of Electronic Technics Materials with the Required Substructure." Materials Science Forum 843 (February 2016): 145–50. http://dx.doi.org/10.4028/www.scientific.net/msf.843.145.

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The paper analyzes the features of a liquid zones thermomigration process in a crystal for the formation of semiconductor materials with the required substructure, carried out in comparison with a diffusion method. The primary factors defining and accompanying the thermomigration process of liquid inclusion in a crystal are considered. The geometrical, concentration, temperature-time and other conditions at which the choice of the thermomigration effect as a local doping method is preferable are revealed and described. It is shown, that the thermomigration method possesses considerable advanta

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35

Zhao, Zhi Huan, Zhi Bin Zhao, Ming Ming Jiang, et al. "The Distribution Trend of Boron Atoms in Semiconductor Silicon under High Temperature." Key Engineering Materials 871 (January 2021): 243–47. http://dx.doi.org/10.4028/www.scientific.net/kem.871.243.

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The ProENGINEER software is used to build a geometric model for the whole process cavity and internal structure and conduct the internal dynamic simulation of cavity with different diffusion temperatures of 1,000°C, 1,050°C, 1,100°C and 1,150°C, and different diffusion time of 5 min, 10 min, 15 min and 20 min. Analyze the process control indexes by combining with specific thermal diffusion test, and study the relationship between hydrodynamic parameters and diffusion uniformity, Comprehensively investigate the effects of the diffusion temperature and diffusion time on doping, achieving the req

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36

Werner, P. "Growth and Properties of Silicon Nanowires for Low-Dimensional Devices." Solid State Phenomena 131-133 (October 2007): 535–40. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.535.

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The generation of semiconductor nanowires (NWs) by a “bottom-up” approach is of technological interest for the development of new nanodevices. In most cases Si and SiGe nanowires (NWs) are grown by molecular beam epitaxy (MBE) and by chemical vapor deposition (CVD) on the base of the vapor-liquid-solid-mechanism (VLS). In both cases small metal droplets act as a seed for the NW formation. The article mainly refers to the specific features of the MBE growth. The application of metals related to the VLS growth concept (quite often gold droplets are used) also causes several disadvantages of this

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VELICHKO, O. I. "SIMULATION OF BORON DIFFUSION IN THE NEAR-SURFACE REGION OF SILICON SUBSTRATE." Surface Review and Letters 27, no. 11 (2020): 2050010. http://dx.doi.org/10.1142/s0218625x20500109.

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The mechanism of boron-enhanced diffusion from a thin boron layer deposited on the surface in the case of silicon crystal doping is proposed and investigated. It was supposed that lattice contraction occurs in the vicinity of the surface due to the difference between the atomic radii of boron and silicon. This lattice contraction provides a stress-mediated diffusion of silicon self-interstitials from the near-surface region to the bulk of a semiconductor. Due to the stress-mediated diffusion, the near-surface region is depleted of silicon self-interstitials, and simultaneous oversaturation of

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Pan, J., S. Afroz, N. Crain, W. Henning, J. Oliver, and T. Knight. "Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC." MRS Advances 4, no. 44-45 (2019): 2377–82. http://dx.doi.org/10.1557/adv.2019.224.

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AbstractIn this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide int

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Widodo, S. "Study Of Solid Planar Source For Phosphorus Diffution Process On Semiconductor Devices Fabrication." REAKTOR 6, no. 1 (2017): 35. http://dx.doi.org/10.14710/reaktor.6.1.35-39.

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The sourcing lifetimes, microstructural staility, and diffution performance of a new solid planar phosphorus source for silicon doping were investigated in the temperature range 900-1000 0C. The source wafers were highly porous ceramic wafers containing 25 weight percentage (w/o) SiP2O7 as the “active” component in an inert refractory binder matrix. The microstructural stability and thermografimetric analysis (TGA) result indicated the structural integrity and sourcing ability of this materials at temperatures of at least 1050 0C. Theoretical lifetimesof 260 and 3400 hr at 1000 and 900 0C, res

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Chandra, Aditi, Mao Takashima, Martha Montague, Joey Li, and Arvind Kamath. "Screen Printable Semiconductor Grade Inks for N and P type Doping of Polysilicon." MRS Advances 1, no. 14 (2016): 965–70. http://dx.doi.org/10.1557/adv.2016.118.

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ABSTRACTThis article describes the electrical and physical properties of polysilicon doped with novel N+ and P+ screen printed inks using a thermally activated process. Unique ink formulations for N and P type doping of silicon are evaluated in volume production in order to enable a low cost, high throughput process. Inks can be used with multiple substrate types and form factors. The concentrated doping source combined with thermal drive in and activation results in degenerately doped layers of polysilicon. Inks are semiconductor grade which is demonstrated by their use in fabricating high mo

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Hinojosa, Miguel, Aderinto Ogunniyi, Stephen Bayne, Edward van Brunt, and Sei Hyung Ryu. "Electro-Thermal TCAD Model for 22 kV Silicon Carbide IGBTs." Materials Science Forum 858 (May 2016): 949–53. http://dx.doi.org/10.4028/www.scientific.net/msf.858.949.

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This paper presents the current progress in the development of an electro-thermal numerical model for 22 kV 4H-silicon carbide IGBTs. This effort involved the creation of a TCAD model based on doping profiles and structural layers to simulate the steady-state and switching characteristics of recently-fabricated experimental devices. The technical challenge of creating this high voltage SiC IGBT model was incorporating semiconductor equations with sub-models representing carrier mobility, generation, recombination, and lattice heat flow effects with parameters conditioned for 4H-silicon carbide

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Lam, Amy C. "Defect distribution of through-Oxide boron-Implanted silicon with and without fluorine incorporation." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1394–95. http://dx.doi.org/10.1017/s0424820100131607.

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Material defects generated during device processing can affect the performance of VLSI/ULSI devices. Ion implantation is the most common method of doping in the semiconductor industry. Implantation is usually performed with the wafers oriented 7° off the incident beam direction and through oxide to minimize the channeling effect. In order to obtain shallow p/n junctions for metal-oxide-semiconductor (MOS) devices, implantation of BF2+ molecular ions into silicon has been reported to have advantages over only B+ implantation. With the incorporation of fluorine, suppression of boron diffusion wi

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Carlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.

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Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature o

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Tavkhelidze, Avto, Amiran Bibilashvili, Larissa Jangidze, and Nima E. Gorji. "Fermi-Level Tuning of G-Doped Layers." Nanomaterials 11, no. 2 (2021): 505. http://dx.doi.org/10.3390/nano11020505.

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Recently, geometry-induced quantum effects were observed in periodic nanostructures. Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical properties of semiconductor layers. Silicon NG layers exhibit geometry-induced doping. In this study, G-doped junctions were fabricated and characterized and the Fermi-level tuning of the G-doped layers by changing the NG depth was investigated. Samples with various indent depths were fabricated using laser interference lithography and a consecutive series of reactive ion etching. Four adjacent areas with NG depths of 10, 20,

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Pizzone, Mattia, Maria Grazia Grimaldi, Antonino La Magna, et al. "Study of the Molecule Adsorption Process during the Molecular Doping." Nanomaterials 11, no. 8 (2021): 1899. http://dx.doi.org/10.3390/nano11081899.

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Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molec

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Lian, Xiaojuan, Xinyi Shen, Liqun Lu, et al. "Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors." Micromachines 10, no. 6 (2019): 369. http://dx.doi.org/10.3390/mi10060369.

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Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercialization applications. Owing to the filamentary nature of most RS devices, the variability of RS parameters can be reduced by doping in the RS region, where conductive filaments (CFs) can grow along the locations of impurities. In this work, we have successfully obtained RS characteristics in Pt dispersed

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Asadchikov, Victor E., Irina G. Dyachkova, Denis A. Zolotov, Yuri S. Krivonosov, Vladimir T. Bublik, and Alexander I. Shikhov. "Effect of proton doping and heat treatment on the structure of single crystal silicon." Modern Electronic Materials 5, no. 1 (2019): 13–19. http://dx.doi.org/10.3897/j.moem.5.1.46413.

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The quality and structural perfection of single crystal silicon have been studied using double-crystal X-ray diffraction after hydrogen ion implantation and thermal annealing used in a number of semiconductor technologies. The fundamental difference of this approach is the possibility to rapidly obtain reliable experimental results which were confirmed using X-ray topography. Data have been presented for the condition of the damaged layer in n-type silicon single crystals (r = 100 W × cm) having the (111) orientation and a thickness of 2 mm after proton implantation at energies E = 200, 300 an

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Okamoto, Mitsuo, Miwako Iijima, Tsutomu Yatsuo, Kenji Fukuda, and Hajime Okumura. "Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices." Materials Science Forum 645-648 (April 2010): 995–98. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.995.

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We fabricated 4H-silicon carbide (SiC) Complementary Metal-Oxide-Semiconductor (CMOS) devices with wet gate oxidation processing. The channel properties of n-channel MOS Field-Effect-Transistor (NMOS) were controlled by buried channel (BC) structure. The electrical properties of CMOS devices depended on the doping concentration of the BC-layer (Nbc) for NMOS. The SiC CMOS inverters with high Nbc indicated fast operation at the delay time (Td) of 4.8 ns for supply voltage of 15 V. To our knowledge, Td obtained in this study is the smallest among the reported values for SiC CMOS inverters.

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Jiang, Hao, Changbin Nie, Jintao Fu, et al. "Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect." Nanophotonics 9, no. 11 (2020): 3663–72. http://dx.doi.org/10.1515/nanoph-2020-0261.

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AbstractThe hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 107 A/W and a fast response time of

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Basel, J., and N. Pantha. "Substitutional Lithium Doping on Germanene: A First-principles Study." Journal of Nepal Physical Society 7, no. 2 (2021): 33–41. http://dx.doi.org/10.3126/jnphyssoc.v7i2.38620.

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The density functional theory (DFT) based first-principles calculations have been adopted for the study of structural, electronic and magnetic properties of pure and single Lithium (Li) atom doped germanene monolayer. Due to the higher intrinsic carrier mobilities and large spin orbit gap, germanene has great possibility of being integrated into the silicon based semiconductor industry. Different studies have been done to change the band gap value from its’ pristine zero band gap state. We have doped the single Li atom into the germanene system with the intention of tuning the band gap and oth

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