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Relevant bibliographies by topics / Silicon sensors

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Academic literature on the topic 'Silicon sensors'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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Journal articles on the topic "Silicon sensors"

1

Szczepański, Zbigniew, and Jerzy Kalenik. "Advanced Assembly Techniques For Silicon Sensors." Journal of Microelectronics and Electronic Packaging 2, no. 1 (2005): 8–13. http://dx.doi.org/10.4071/1551-4897-2.1.8.

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Some assembly approaches which were carried out with silicon gas sensor and silicon humidity sensor are presented and described in this paper. Some of these sensors were based on silicon 3-D structures with so called “backside contacts” which need special assembly solutions. Flip chip solder and adhesive bonding were used for silicon humidity sensor. Experimental specifications concerning applied assembly solutions and obtained results are presented and described.

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Mubarak, Riyad, Holger Schilke, and Gunther Seckmeyer. "Improving the Irradiance Data Measured by Silicon-Based Sensors." Energies 14, no. 10 (2021): 2766. http://dx.doi.org/10.3390/en14102766.

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Silicon-based sensors are widely used for monitoring solar irradiance, in particular, in the field of Photovoltaic (PV) applications. We present a method to correct the global horizontal irradiance measured by silicon-based sensors that reduces the difference to the standard thermopile sensor measurements. A major motivation to use silicon-based sensors for the measurements of irradiance is their lower cost. In addition, their response time is much lower, and their spectral response is much closer to that of the PV systems. The analysis of the differences is based on evaluating four parameters

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Gao, Junhua, Liangliang Tian, and Zhengfu Cheng. "Enhancing the Sensitivity of a Thermal Microflow Sensor: A Comprehensive Modeling and Simulation Study." Micromachines 16, no. 2 (2025): 231. https://doi.org/10.3390/mi16020231.

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The advancement of microfluidic technology has introduced new requirements for the sensitivity of microflow sensors. To address this, this paper presents a novel high-sensitivity thermal microflow sensor incorporating a heat-insulating cavity structure. The sensor utilizes porous silicon as the substrate and employs vanadium dioxide as the thermistor element. This study employed COMSOL Multiphysics finite element software 5.6 to investigate the impact of materials and structural factors on the sensor’s sensitivity, as well as considering the dynamic laws governing their influence. Additionally

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Middelhoek, S., A. A. Bellekom, U. Dauderstadt, et al. "Silicon sensors." Measurement Science and Technology 6, no. 12 (1995): 1641–58. http://dx.doi.org/10.1088/0957-0233/6/12/001.

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van Herwaarden, Sander. "Silicon Sensors." Sensors and Actuators A: Physical 24, no. 2 (1990): 171. http://dx.doi.org/10.1016/0924-4247(90)80023-x.

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Schintke, Silvia, Badil Mujovi, Darja Loiko, and Stefan del Rossi. "Graphite- and Graphene-Based Polymer Nanocomposites for Flexible Sensors and Actuators in Health Care and Soft Robotics Applications." Materials Science Forum 1107 (December 6, 2023): 15–20. http://dx.doi.org/10.4028/p-hrfme1.

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Flexible sensors and actuators have broad applications in the fields of wearable electronics for health, sports, functional textiles, robotics and cobot applications. Graphene-or graphite-based polymer nanocomposites are promising materials for the development of soft sensors and actuators. This study investigates strain sensing properties of silicon rubber with various graphene filler concentrations (8wt%-12wt%). Current-voltage characteristics have been measured under various strains. We obtain that the sensor’s electrical resistance, for a given voltage, can be approximated by a linear fit

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Zhu, Ziyi, Shougang Zhang, and Jun Ruan. "Research on Pressure Sensor of Circular Monocrystalline Silicon Chassis." Journal of Physics: Conference Series 2800, no. 1 (2024): 012009. http://dx.doi.org/10.1088/1742-6596/2800/1/012009.

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Abstract Traditional sensors, such as pressure, piezoelectric or piezoresistive, mostly use square silicon-based materials as chassis and use Wheatstone bridge circuits to measure pressure and resistance values. Nowadays, reducing the size of sensors is also a problem to be solved in the increasingly wide range of sensor applications. In this paper, a circular monocrystalline silicon base pressure sensor is designed and its performance is studied. We applied COMSOL software to model the circular chassis base pressure sensor, tested the deformation of the circular chassis base pressure sensor u

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Wu, Chi-Chang. "Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection." Biosensors 12, no. 2 (2022): 115. http://dx.doi.org/10.3390/bios12020115.

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Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire le

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Bogue, Robert. "Non-silicon MEMS – the hard and soft alternatives." Sensor Review 36, no. 3 (2016): 225–30. http://dx.doi.org/10.1108/sr-03-2016-0057.

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Purpose This paper aims to provide details of MEMS (micro-electromechanical system) sensors produced from materials other than silicon. Design/methodology/approach Following a short introduction, this first considers reasons for using alternatives to silicon. It then discusses MEMS sensor products and research involving sapphire, quartz, silicon carbide and aluminium nitride. It then considers polymer and paper MEMS sensor developments and concludes with a brief discussion. Findings MEMS sensors based on the “hard” materials are well-suited to very-high-temperature- and precision-sensing appli

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Ghanam, Muhannad, Peter Woias, and Frank Goldschmidtböing. "MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments." Sensors 25, no. 3 (2025): 636. https://doi.org/10.3390/s25030636.

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This study introduces a manufacturing process based on industrial MEMS technology, enabling the production of diverse sensor designs customized for a wide range of absolute pressure measurements. Using monocrystalline silicon as the structural material minimizes thermal stresses and eliminates temperature-dependent semiconductor effects, as silicon functions solely as a mechanical material. Integrating a eutectic bonding process in the sensor fabrication allows for a reliable operation at temperatures up to 350 °C. The capacitive sensor electrodes are enclosed within a silicon-based Faraday ca

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Dissertations / Theses on the topic "Silicon sensors"

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Gajda, Mark Andrzej. "Silicon sensors on membranes." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321077.

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Hout, S. R. in't. "High-temperature silicon sensors." Delft, the Netherlands : Delft University Press, 1996. http://books.google.com/books?id=dApTAAAAMAAJ.

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Thomas, Mikkel Andrey. "Integrated optical interferometric sensors on silicon and silicon cmos." Diss., Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26674.

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The main objective of this research is to fabricate and characterize an optically integrated interferometric sensor on standard silicon and silicon CMOS circuitry. An optical sensor system of this nature would provide the high sensitivity and immunity to electromagnetic interference found in interferometric based sensors in a lightweight, compact package capable of being deployed in a multitude of situations inappropriate for standard sensor configurations. There are several challenges involved in implementing this system. These include the development of a suitable optical emitter for the sen

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Guardiola, Salmerón Consuelo. "Novel silicon sensors for neutron detection." Doctoral thesis, Universitat Autònoma de Barcelona, 2012. http://hdl.handle.net/10803/117536.

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La detección precisa y la dosimetría de neutrones en campos de radiación mixtos y pulsados es un tema instrumental demandado con gran interés por las comunidades médica e industrial. Estudios recientes de la contaminación de neutrones alrededor de los aceleradores lineales médicos han aumentado la preocupación sobre el riesgo de cáncer secundario en pacientes sometidos a tratamiento de radioterapia en las modalidades de fotones con energías superiores a 8 MeV. En respuesta a esa necesidad, en esta tesis se ha desarrollado una innovadora alternativa a los detectores estándares con un método act

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Weatherill, Daniel Philip. "Charge collection in silicon imaging sensors." Thesis, Open University, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.702424.

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The subject of this thesis is the analysis of instrumental effects caused by the interaction between collected signal charge and electric fields within precision CCD imaging sensors typically used for astronomy. These phenomena cause aberrations in the measured spatial distribution of subsequently collected signal, which may present a major error for upcoming astronomy projects which rely heavily on accurately determining shapes of compact sources. Examples are the Large Synoptic Survey Telescope and t he Euclid space telescope. The size of dynamic collection effects may be subtly affected by

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DeBoer, John Raymond. "Evaluation Methods for Porous Silicon Gas Sensors." Thesis, Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4971.

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This study investigated the behavior of porous silicon gas sensors under exposure to CO, NO, and NH3 gas at the part per million level. Parameters of interest in this study included the electrical, environmental, and chemi-resistive performance associated with various porous silicon morphologies. Based upon the variability of preliminary results, a gas pulsing method was combined with signal processing in order to analyze small impedance changes in an environment of substantial noise. With this technique, sensors could be effectively screened and characterized. Finally this method was comb

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Singh, Tony. "Chromatically addressed micro-silicon Fabry-Perot sensors." Thesis, University of Liverpool, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399284.

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Su, Yi. "Micromachined piezoresistive single crystal silicon cantilever sensors." Thesis, University of Southampton, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242637.

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Gupta, Shoubhik. "Ultra-thin silicon technology for tactile sensors." Thesis, University of Glasgow, 2019. http://theses.gla.ac.uk/41053/.

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In order to meet the requirements of high performance flexible electronics in fast growing portable consumer electronics, robotics and new fields such as Internet of Things (IoT), new techniques such as electronics based on nanostructures, molecular electronics and quantum electronics have emerged recently. The importance given to the silicon chips with thickness below 50 μm is particularly interesting as this will advance the 3D IC technology as well as open new directions for high-performance flexible electronics. This doctoral thesis focusses on the development of silicon-based ultra-thin c

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Cooper, Emily Barbara 1977. "Silicon field-effect sensors for biomolecular assays." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/87450.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.<br>Includes bibliographical references.<br>System-level understanding of biological processes requires the development of novel biosensors capable of quantitative, real-time readout of molecular interactions. Label-free detection methods can minimize costs in time and resources by obviating preparatory steps necessary with label-based methods. They may further be valuable for monitoring biomolecular systems which are difficult or impossible to tag, or for which reporter molecules

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Books on the topic "Silicon sensors"

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Vigna, Benedetto, Paolo Ferrari, Flavio Francesco Villa, Ernesto Lasalandra, and Sarah Zerbini, eds. Silicon Sensors and Actuators. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9.

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Jain, Vipul, and Payam Heydari. Automotive Radar Sensors in Silicon Technologies. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4419-6775-6.

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Jain, Vipul. Automotive Radar Sensors in Silicon Technologies. Springer New York, 2013.

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Kopsalis, Ioannis. Surface Effects in Segmented Silicon Sensors. Staats- und Universitätsbibliothek Hamburg, 2017.

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F, Wolffenbuttel R., ed. Silicon sensors and circuits: On-chip compatibility. Chapman & Hall, 1996.

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Yu, Chen Liang, and United States. National Aeronautics and Space Administration., eds. SiC-based gas sensors. National Aeronautics and Space Administration, 1997.

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7

M, Meijer G. C., ed. The piezojunction effect in silicon integrated circuits and sensors. Kluwer Academic Publishers, 2002.

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8

Pike, Andrew Charles. Design of chemoresistive silicon sensors for application in gas monitoring. typescript, 1996.

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9

Institute of Physics (Great Britain). Instrument Science and Technology Group., ed. Silicon based sensors: From a meeting of the Instrument Science and Technology Group of the Institute of Physics 8 December 1986 London. Institute of Physics, 1986.

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Yu, Chen Liang, and United States. National Aeronautics and Space Administration., eds. Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors. National Aeronautics and Space Administration, 1996.

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Book chapters on the topic "Silicon sensors"

1

Krimmel, E. F. "Silicon Sensors." In Silicon. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09897-4_20.

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Vigna, Benedetto, Ernesto Lasalandra, Sarah Zerbini, and Mario Aleo. "Silicon Sensors." In Springer Handbook of Semiconductor Devices. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-79827-7_18.

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Krimmel, Eberhard F., Rudolf Hezel, Uwe Nohl, and Rainer Bohrer. "Silicon Nitride in Sensors." In Si Silicon. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-662-09901-8_29.

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Da Vià, Cinzia, Gian-Franco Dalla Betta, and Sherwood Parker. "Silicon Radiation Sensors." In Radiation Sensors with Three-Dimensional Electrodes. CRC Press, 2019. http://dx.doi.org/10.1201/9780429055324-2.

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Bruno, Giuseppe, and Michele Vaiana. "Environmental Sensors." In Silicon Sensors and Actuators. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_17.

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Allegato, Giorgio, Lorenzo Corso, and Carlo Valzasina. "Inertial Sensors." In Silicon Sensors and Actuators. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_13.

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Duqi, Enri, Giorgio Allegato, and Mikel Azpeitia. "Pressure Sensors." In Silicon Sensors and Actuators. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_16.

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Hameed, Mohamed Farhat O., A. Samy Saadeldin, Essam M. A. Elkaramany, and S. S. A. Obayya. "Introduction to Silicon Photonics." In Computational Photonic Sensors. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-76556-3_4.

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Alessandri, Anna, Filippo D’Ercoli, Pietro Petruzza, and Alessandra Sciutti. "Deep Silicon Etch." In Silicon Sensors and Actuators. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_5.

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Hameed, Mohamed Farhat O., A. Samy Saadeldin, Essam M. A. Elkaramany, and S. S. A. Obayya. "Silicon Nanowires for DNA Sensing." In Computational Photonic Sensors. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-76556-3_13.

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Conference papers on the topic "Silicon sensors"

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La Grasta, A., M. I. Gómez-Gómez, A. Griol, et al. "Preliminary results of refractometric sensors based on silicon nitride ring resonators." In Optical Sensors. Optica Publishing Group, 2024. https://doi.org/10.1364/sensors.2024.sw1c.2.

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Silicon-based ring resonators have proven to be essential components for building lab-on-chip systems, thanks to their capability to operate as label-free photonic sensors. Moreover, the possibility of using silicon nitride wafers offer low-loss waveguides across a wide range of wavelengths, from visible to near-infrared. In this work, we report on refractometric sensors based on silicon nitride ring resonators operating in the TE mode around 1310 nm wavelengths. Our preliminary results demonstrate that such a device could be used in the area of biosensing, therefore the aim is to test its sen

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Samà, F., F. Piretta, F. Bontempi, J. Elaskar, D. Angeloni, and C. J. Oton. "Improving the Sensitivity of Refractive Index Interferometric Sensors on Silicon Chip." In Optical Sensors. Optica Publishing Group, 2024. https://doi.org/10.1364/sensors.2024.sw1c.1.

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We present an interferometric chemical sensor on silicon chip measuring refractive index variations in contacting liquids, optimized at 1310 nm wavelength and TM polarization, and tripling the sensitivity of a 1550 nm TE polarization counterpart.

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Elaskar, J., S. Cammarata, F. Samà, F. Di Pasquale, and C. J. Oton. "Integrated High-speed Sub-picometer Wavemeter Based on Silicon Carrier-depletion Modulator." In Optical Sensors. Optica Publishing Group, 2024. https://doi.org/10.1364/sensors.2024.sm3c.2.

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We present a silicon integrated high-speed wavemeter with a range from 1520 to 1580 nm. Experimental results show a standard deviation of 0.16 pm with 150 kHz bandwidth and FBG detection up to 42 kHz.

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Lemke, Benjamin, Marek E. Schmidt, Johannes Gutmann, et al. "Nonlinear piezoresistance of silicon." In 2010 Ninth IEEE Sensors Conference (SENSORS 2010). IEEE, 2010. http://dx.doi.org/10.1109/icsens.2010.5689973.

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Westerveld, Wouter J., Md Mahmud-Ul-Hasan, Cedric Pieters, et al. "Optomechanical ultrasound sensors in silicon photonics." In Silicon Photonics XVI, edited by Graham T. Reed and Andrew P. Knights. SPIE, 2021. http://dx.doi.org/10.1117/12.2576672.

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Knutti, James W. "Silicon Microstructure Sensors." In OE/LASE '89, edited by Alan I. West. SPIE, 1989. http://dx.doi.org/10.1117/12.952157.

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Zhou, Zhiping, and Huaxiang Yi. "Silicon microring sensors." In SPIE LASE, edited by Alexis V. Kudryashov, Alan H. Paxton, and Vladimir S. Ilchenko. SPIE, 2012. http://dx.doi.org/10.1117/12.908551.

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Chu, Chen-Hing, Tsung-Lin Chou, Chun-Te Lin, and Kuo-Ning Chiang. "Investigation of Packaging Effect of Silicon-Based Piezoresistive Pressure Sensor." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-14208.

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The silicon-based pressure sensor is one of the major applications in the MEMS device. Nowadays, the silicon piezoresistive pressure sensor is a mature technology in industry and its measurement accuracy is more rigorous in many advanced applications. In order to operate the piezoresistive pressure sensor in harsh environment, the silicone get is usually used to protect the die surface and wire bond while allowing the pressure signal to be transmitted to the silicon diaphragm. The major factor affecting the high performance applications of the piezoresistive pressure sensor is the temperature

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Wu, Cheng-Siou, Yu-Hsiang Chen, and Shih-Hsiang Hsu. "Silicon-based Spectral-Domain OCT through Grating Couplers." In Optical Sensors. Optica Publishing Group, 2023. http://dx.doi.org/10.1364/sensors.2023.sw3b.8.

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A silicon-based bandwidth filter is used to compensate for the non-flat wavelength response of the silicon wire grating coupler and optical power coupler to achieve the best axial resolution of the spectral-domain optical coherence tomography.

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Cao, Li, Chuck Hautamaki, Jia Zhou, Tae Song Kim, and Sue Mantell. "Calibration of MEMS Strain Sensors Fabricated on Silicon." In ASME 2001 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/imece2001/mems-23856.

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Abstract A calibration technique for measuring MEMS strain sensor performance is described. The sensor calibration technique entails developing a repeatable relationship (gage factor) between the change in sensor nominal resistance and the strain measured at the sensor. The calibration technique involves creating a “pseudo” strain sensor consisting of a strain gage mounted on a silicon wafer. Two identical test specimens are evaluated: the pseudo sensor mounted (with adhesive) on an aluminum specimen (or embedded in a specimen), and a MEMS strain sensor mounted on an aluminum specimen (or embe

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Reports on the topic "Silicon sensors"

1

Israel, Scott, and Zoltan Gecse. Characterization of Silicon Sensors for HGCal in CMS. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1614730.

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Nhanced Semiconductors, Inc. Development of thinned silicon sensors on 8” wafers. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1617211.

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Campanella, Michael, Maral Alyari, and Ron Lipton. Characterization of CMS High Granularity Calorimeter Silicon Sensors. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1623362.

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Carey, JE, and E. Mazur. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics. Office of Scientific and Technical Information (OSTI), 2005. http://dx.doi.org/10.2172/840172.

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Parker, Sherwood I. 3D, Flash, Induced Current Readout for Silicon Sensors. Office of Scientific and Technical Information (OSTI), 2014. http://dx.doi.org/10.2172/1150720.

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Hendrickson, Benjamin. Dark Current RTS-Noise in Silicon Image Sensors. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.6359.

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Kavelaars, Alicia. Performance of Large Area Silicon Strip-Sensors for GLAST. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/812950.

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Nabeel Riza. Extreme Environment Silicon Carbide Hybrid Temperature & Pressure Optical Sensors. Office of Scientific and Technical Information (OSTI), 2010. http://dx.doi.org/10.2172/1013345.

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Luukka, Panja, Teppo Maenpaa, Esa Tuovinen, Lenny Spiegel, and Robert Flight. Tests of Radiation-Hard Silicon Microstrip Sensors for CMS in S-LHC. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1022783.

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Brown, Emily R. Diborane Electrode Response in 3D Silicon Sensors for the CMS and ATLAS Experiments. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1017226.

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