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Relevant bibliographies by topics / Silicon sensors

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Academic literature on the topic 'Silicon sensors'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 March 2023

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Journal articles on the topic "Silicon sensors"

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Szczepański, Zbigniew, and Jerzy Kalenik. "Advanced Assembly Techniques For Silicon Sensors." Journal of Microelectronics and Electronic Packaging 2, no. 1 (January 1, 2005): 8–13. http://dx.doi.org/10.4071/1551-4897-2.1.8.

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Some assembly approaches which were carried out with silicon gas sensor and silicon humidity sensor are presented and described in this paper. Some of these sensors were based on silicon 3-D structures with so called “backside contacts” which need special assembly solutions. Flip chip solder and adhesive bonding were used for silicon humidity sensor. Experimental specifications concerning applied assembly solutions and obtained results are presented and described.

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Middelhoek, S., A. A. Bellekom, U. Dauderstadt, P. J. French, S. R. in `t Hout, W. Kindt, F. Riedijk, and M. J. Vellekoop. "Silicon sensors." Measurement Science and Technology 6, no. 12 (December 1, 1995): 1641–58. http://dx.doi.org/10.1088/0957-0233/6/12/001.

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van Herwaarden, Sander. "Silicon Sensors." Sensors and Actuators A: Physical 24, no. 2 (July 1990): 171. http://dx.doi.org/10.1016/0924-4247(90)80023-x.

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Mubarak, Riyad, Holger Schilke, and Gunther Seckmeyer. "Improving the Irradiance Data Measured by Silicon-Based Sensors." Energies 14, no. 10 (May 12, 2021): 2766. http://dx.doi.org/10.3390/en14102766.

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Silicon-based sensors are widely used for monitoring solar irradiance, in particular, in the field of Photovoltaic (PV) applications. We present a method to correct the global horizontal irradiance measured by silicon-based sensors that reduces the difference to the standard thermopile sensor measurements. A major motivation to use silicon-based sensors for the measurements of irradiance is their lower cost. In addition, their response time is much lower, and their spectral response is much closer to that of the PV systems. The analysis of the differences is based on evaluating four parameters that influence the sensor measurements, namely the temperature, cosine error, spectral mismatch, and calibration factor. Based on the analysis, a correction model is applied to the silicon sensors measurements. The model separates measurements under a clear sky and cloudy sky by combining the clearness index and the solar zenith angle. By applying the correction model on the measurements of the silicon-based sensor, the differences between sensor readings have been reduced significantly. The relative root mean squared difference (rRMSD) between the daily solar irradiation measured by both sensors decreased from 10.6% to 5.4% after applying the correction model, while relative mean absolute difference (rMAD) decreased from 7.4% to 2.5%. The difference in total annual irradiation decreased from 70 KWh/m2 (6.5%) to 15 kWh/m2 (1.5%) by the correction. The presented correction method shows promising results for a further improvement in the accuracy of silicon-based sensors.

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Bogue, Robert. "Non-silicon MEMS – the hard and soft alternatives." Sensor Review 36, no. 3 (June 20, 2016): 225–30. http://dx.doi.org/10.1108/sr-03-2016-0057.

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Purpose This paper aims to provide details of MEMS (micro-electromechanical system) sensors produced from materials other than silicon. Design/methodology/approach Following a short introduction, this first considers reasons for using alternatives to silicon. It then discusses MEMS sensor products and research involving sapphire, quartz, silicon carbide and aluminium nitride. It then considers polymer and paper MEMS sensor developments and concludes with a brief discussion. Findings MEMS sensors based on the “hard” materials are well-suited to very-high-temperature- and precision-sensing applications. Some have been commercialised and there is a strong, on-going body of research. Polymer MEMS sensors are attracting great interest from the research community and have the potential to yield devices for both physical and molecular sensing that are inexpensive and simple to fabricate. The prospects for paper MEMS remain unclear but the technology may ultimately find uses in ultra-low-cost sensing of low-magnitude mechanical variables. Originality/value This provides a technical insight into the increasingly important role played by MEMS sensors fabricated from materials other than silicon.

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Hollingum, Jack. "SILICON SENSORS MlCROENGINEERING." Sensor Review 12, no. 2 (February 1992): 16–19. http://dx.doi.org/10.1108/eb007873.

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Roberts, Jonathan. "Silicon fingerprint sensors." Biometric Technology Today 8, no. 5 (May 2000): 8–10. http://dx.doi.org/10.1016/s0969-4765(00)05012-8.

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van Oudheusden, B. W. "Silicon flow sensors." IEE Proceedings D Control Theory and Applications 135, no. 5 (1988): 373. http://dx.doi.org/10.1049/ip-d.1988.0057.

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Jain, J. D., and G. S. T. Rao. "Integrated Silicon Sensors." IETE Technical Review 6, no. 3 (May 1989): 210–19. http://dx.doi.org/10.1080/02564602.1989.11438474.

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Stemme, G. "Resonant silicon sensors." Journal of Micromechanics and Microengineering 1, no. 2 (June 1, 1991): 113–25. http://dx.doi.org/10.1088/0960-1317/1/2/004.

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Dissertations / Theses on the topic "Silicon sensors"

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Gajda, Mark Andrzej. "Silicon sensors on membranes." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321077.

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Hout, S. R. in't. "High-temperature silicon sensors." Delft, the Netherlands : Delft University Press, 1996. http://books.google.com/books?id=dApTAAAAMAAJ.

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Thomas, Mikkel Andrey. "Integrated optical interferometric sensors on silicon and silicon cmos." Diss., Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26674.

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The main objective of this research is to fabricate and characterize an optically integrated interferometric sensor on standard silicon and silicon CMOS circuitry. An optical sensor system of this nature would provide the high sensitivity and immunity to electromagnetic interference found in interferometric based sensors in a lightweight, compact package capable of being deployed in a multitude of situations inappropriate for standard sensor configurations. There are several challenges involved in implementing this system. These include the development of a suitable optical emitter for the sensor system, the interface between the various optically embedded components, and the compatibility of the Si CMOS with heterogeneous integration techniques. The research reported outlines a process for integrating an integrated sensor on Si CMOS circuitry using CMOS compatible materials, integration techniques, and emitter components.

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Guardiola, Salmerón Consuelo. "Novel silicon sensors for neutron detection." Doctoral thesis, Universitat Autònoma de Barcelona, 2012. http://hdl.handle.net/10803/117536.

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La detección precisa y la dosimetría de neutrones en campos de radiación mixtos y pulsados es un tema instrumental demandado con gran interés por las comunidades médica e industrial. Estudios recientes de la contaminación de neutrones alrededor de los aceleradores lineales médicos han aumentado la preocupación sobre el riesgo de cáncer secundario en pacientes sometidos a tratamiento de radioterapia en las modalidades de fotones con energías superiores a 8 MeV. En respuesta a esa necesidad, en esta tesis se ha desarrollado una innovadora alternativa a los detectores estándares con un método activo para medir los neutrones alrededor de un acelerador lineal médico. Para tal fin, se han fabricado y optimizado nuevos detectores de silicio ultra delgados con electrodos 3D. El volumen activo de estos sensores tiene sólo 10 μm de espesor, lo que permite un alto rechazo a rayos gamma, lo cual es necesario para discriminar la señal de neutrones en el campo de la radiación periférica en radioterapia (con un alto fondo gamma). Estos detectores de neutrones son una solución prometedora para estimar el riesgo del paciente, puesto que pueden proporcionar al personal médico una respuesta rápida para una planificación óptima del tratamiento. También pueden ser utilizados en otras áreas con campos de radiación mixtos de neutrones/gamma tales como entornos nucleares y aeroespaciales, o microdosimetría. Además, las características intrínsecas de los dispositivos de silicio como robustez, pequeño tamaño, peso ligero y bajo consumo, los hacen ideales para ser empleados como sistemas de detección de neutrones portátiles. La investigación presentada en este trabajo describe las simulaciones Monte Carlo llevadas a cabo para optimizar el diseño de los prototipos, los procesos de fabricación de los detectores y su caracterización con fuentes radiactivas. Finalmente, se muestra el buen funcionamiento de estos nuevos detectores 3D ultra–delgados de silicio para la detección de neutrones en salas de radioterapia.
The accurate detection and dosimetry of neutrons in mixed and pulsed radiation fields is a demanding instrumental issue with great interest both for the industrial and medical communities. Recent studies of the neutron contamination around medical linear accelerators have increased the concern about the secondary cancer risk for radiotherapy patients undergoing treatment in photon modalities at energies greater than 8 MeV. In this thesis, an innovative alternative to standard detectors with an active method to measure neutrons around a medical linac has been developed in response to that need. Novel ultra–thin silicon detectors with 3D electrodes adapted for neutron detection have been fabricated and optimized for such purpose. The active volume of these sensors is only 10 μm thick, allowing a high gamma rejection, which is necessary to discriminate the neutron signal in the radiotherapy peripheral radiation field with a high gamma background. These neutron detectors are not only a promising solution to estimate patient risk since they may provide medical staff a fast feedback for optimal treatment planning, but expand the functional applications of current neutron detectors for other environments with mixed gamma–neutron radiation fields such as nuclear and aerospace environments or microdosimetry. Moreover, the intrinsic features of the silicon devices like robustness, small size, consumption and weight, make them ideal for portable systems. The research presented in this work describes first the Monte Carlo simulations to optimize the design of the prototypes, secondly the fabrication processes of the detectors, and third the electrical characterization and calibration with radioactive sources of these sensors. Finally, it is shown the good performance of the novel ultra–thin 3D silicon detectors for neutron detection inside a radiotherapy room.

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Weatherill, Daniel Philip. "Charge collection in silicon imaging sensors." Thesis, Open University, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.702424.

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The subject of this thesis is the analysis of instrumental effects caused by the interaction between collected signal charge and electric fields within precision CCD imaging sensors typically used for astronomy. These phenomena cause aberrations in the measured spatial distribution of subsequently collected signal, which may present a major error for upcoming astronomy projects which rely heavily on accurately determining shapes of compact sources. Examples are the Large Synoptic Survey Telescope and t he Euclid space telescope. The size of dynamic collection effects may be subtly affected by t he operating conditions and design parameters of the device. Dynamic charge collection effects differ in origin from many other errors introduced by imaging detect ors in that they are attributable t o changes in the confinement of charge carriers during the collection phase of operation, rather than the readout phase. The fact that t he exact aberration implied by dynamic charge collection effects depends exactly on the incident light field's spatial distribution also makes them comparatively difficult to correct for . A method of physically modelling charge collection within t he detector using analytical solutions to Poisson's equation is described, which is shown to qualitatively reproduce many features of measured dynamic charge collection effects. Since the model is derived from device physics, it differs in approach in a complementary way from previous efforts which are empirically based. Experimental charge collection measurements from two different CCDs both affect ed by dynamic collection effects are presented , and shown in large part to be consistent with the predictions from the theoretical model.

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DeBoer, John Raymond. "Evaluation Methods for Porous Silicon Gas Sensors." Thesis, Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4971.

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This study investigated the behavior of porous silicon gas sensors under exposure to CO, NO, and NH3 gas at the part per million level. Parameters of interest in this study included the electrical, environmental, and chemi-resistive performance associated with various porous silicon morphologies. Based upon the variability of preliminary results, a gas pulsing method was combined with signal processing in order to analyze small impedance changes in an environment of substantial noise. With this technique, sensors could be effectively screened and characterized. Finally this method was combined with various post-treatments in order to improve the sensitivity and selectivity of individual sensors.

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Singh, Tony. "Chromatically addressed micro-silicon Fabry-Perot sensors." Thesis, University of Liverpool, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399284.

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Su, Yi. "Micromachined piezoresistive single crystal silicon cantilever sensors." Thesis, University of Southampton, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242637.

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Gupta, Shoubhik. "Ultra-thin silicon technology for tactile sensors." Thesis, University of Glasgow, 2019. http://theses.gla.ac.uk/41053/.

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In order to meet the requirements of high performance flexible electronics in fast growing portable consumer electronics, robotics and new fields such as Internet of Things (IoT), new techniques such as electronics based on nanostructures, molecular electronics and quantum electronics have emerged recently. The importance given to the silicon chips with thickness below 50 μm is particularly interesting as this will advance the 3D IC technology as well as open new directions for high-performance flexible electronics. This doctoral thesis focusses on the development of silicon-based ultra-thin chip (UTC) for the next generation flexible electronics. UTCs, on one hand can provide processing speed at par with state-of-the-art CMOS technology, and on the other provide the mechanical flexibility to allow smooth integration on flexible substrates. These development form the motivation behind the work presented in this thesis. As the thickness of any silicon piece decreases, the flexural rigidity decreases. The flexural rigidity is defined as the force couple required to bend a non-rigid structure to a unit curvature, and therefore the flexibility increases. The new approach presented in this thesis for achieving thin silicon exploits existing and well-established silicon infrastructure, process, and design modules. The thin chips of thicknesses ranging between 15 μm - 30 μm, were obtained from processed bulk wafer using anisotropic chemical etching. The thesis also presents thin wafer transfer using two-step transfer printing approach, packaging by lamination or encapsulation between two flexible layerand methods to get the electrical connections out of the chip. The devices realised on the wafer as part of front-end processing, consisted capacitors and transistors, have been tested to analyse the effect of bending on the electrical characteristics. The capacitance of metal-oxide-semiconductor (MOS) capacitors increases by ~5% during bending and similar shift is observed in flatband and threshold voltages. Similarly, the carrier mobility in the channel region of metal-oxide-semiconductor field effect transistor (MOSFET) increases by 9% in tensile bending and decreases by ~5% in compressive bending. The analytical model developed to capture the effect of banding on device performance showed close matching with the experimental results. In order to employ these devices as tactile sensors, two types of piezoelectric materials are investigated, and used in extended gate configuration with the MOSFET. Firstly, a nanocomposite of Poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE) and barium titanate (BT) was developed. The composite, due to opposite piezo and pyroelectric coefficients of constituents, was able to suppress the sensitivity towards temperature when force and temperature varied together, The sensitivity to force in extended gate configuration was measured to be 630 mV/N, and sensitivity to temperature was 6.57 mV/oC, when it was varied during force application. The process optimisation for sputtering piezoelectric Aluminium Nitride (AlN) was also carried out with many parametric variation. AlN does not require poling to exhibit piezoelectricity and therefore offers an attractive alternative for the piezoelectric layer used in devices such as POSFET (where piezoelectric material is directly deposited over the gate area of MOSFET). The optimised process gave highly orientated columnar structure AlN with piezoelectric coefficient of 5.9 pC/N and when connected in extended gate configuration, a sensitivity (normalised change in drain current per unit force) of 2.65 N-1 was obtained.

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Cooper, Emily Barbara 1977. "Silicon field-effect sensors for biomolecular assays." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/87450.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.
Includes bibliographical references.
System-level understanding of biological processes requires the development of novel biosensors capable of quantitative, real-time readout of molecular interactions. Label-free detection methods can minimize costs in time and resources by obviating preparatory steps necessary with label-based methods. They may further be valuable for monitoring biomolecular systems which are difficult or impossible to tag, or for which reporter molecules interfere with biological function. Field-effect sensing is a method of directly sensing intrinsic electrical charge associated with biomolecules without the need for reporter molecules. Microfabrication of field-effect biosensors enables their integration in compact microanalytical systems, as well as the potential to be scaled down in size and up in number. Applying field-effect sensing to the detection and real-time monitoring of specific molecular interactions has long been of interest for protein and nucleic acids analysis. However, these applications are inhibited by serious practical limitations imposed by charge screening in solution. The development of effective measurement techniques requires inquiry into aspects of device engineering, surface chemistry, and buffer conditions. This thesis describes a body of experimental work that investigates the feasibility of label-free analysis of biomolecular interactions by field-effect. This work begins with the microfabrication of field-effect sensors with extremely thin gate oxide, which enables improved surface potential resolution over previously reported sensors.
(cont.) The performance of these sensors has been characterized in terms of drift, noise, and leakage. To better understand the applicability of these sensors, we have characterized the sensors' response to pH, adsorption of polyelectrolyte multilayers, and high-affinity molecular recognition over a range of buffer conditions. Direct, label-free detection of DNA hybridization was accomplished by combining the high-resolution sensors, with enabling surface chemistry, and a differential readout technique. Finally, we explore the lateral scaling limits of potentiometry by applying a novel nanolithographic technique to the fabrication of a single electron transistor that demonstrates Coulomb oscillations at room temperature.
by Emily Barbara Cooper.
Ph.D.

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Books on the topic "Silicon sensors"

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Vigna, Benedetto, Paolo Ferrari, Flavio Francesco Villa, Ernesto Lasalandra, and Sarah Zerbini, eds. Silicon Sensors and Actuators. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9.

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Jain, Vipul, and Payam Heydari. Automotive Radar Sensors in Silicon Technologies. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4419-6775-6.

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Jain, Vipul. Automotive Radar Sensors in Silicon Technologies. New York, NY: Springer New York, 2013.

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Kopsalis, Ioannis. Surface Effects in Segmented Silicon Sensors. Hamburg: Staats- und Universitätsbibliothek Hamburg, 2017.

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F, Wolffenbuttel R., ed. Silicon sensors and circuits: On-chip compatibility. London: Chapman & Hall, 1996.

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Yu, Chen Liang, and United States. National Aeronautics and Space Administration., eds. SiC-based gas sensors. [Washington, D.C: National Aeronautics and Space Administration, 1997.

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M, Meijer G. C., ed. The piezojunction effect in silicon integrated circuits and sensors. Boston: Kluwer Academic Publishers, 2002.

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Amorphous silicon carbide thin films: Deposition, characterization, etching, and piezoresistive sensors applications. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Pike, Andrew Charles. Design of chemoresistive silicon sensors for application in gas monitoring. [s.l.]: typescript, 1996.

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Institute of Physics (Great Britain). Instrument Science and Technology Group., ed. Silicon based sensors: From a meeting of the Instrument Science and Technology Group of the Institute of Physics 8 December 1986 London. Bristol: Institute of Physics, 1986.

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Book chapters on the topic "Silicon sensors"

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Krimmel, E. F. "Silicon Sensors." In Silicon, 415–20. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09897-4_20.

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Vigna, Benedetto, Ernesto Lasalandra, Sarah Zerbini, and Mario Aleo. "Silicon Sensors." In Springer Handbook of Semiconductor Devices, 635–98. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-79827-7_18.

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Krimmel, Eberhard F., Rudolf Hezel, Uwe Nohl, and Rainer Bohrer. "Silicon Nitride in Sensors." In Si Silicon, 300–311. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-662-09901-8_29.

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Da Vià, Cinzia, Gian-Franco Dalla Betta, and Sherwood Parker. "Silicon Radiation Sensors." In Radiation Sensors with Three-Dimensional Electrodes, 5–36. Boca Raton, FL : CRC Press, [2019] | Series: Series in sensors: CRC Press, 2019. http://dx.doi.org/10.1201/9780429055324-2.

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Bruno, Giuseppe, and Michele Vaiana. "Environmental Sensors." In Silicon Sensors and Actuators, 543–61. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_17.

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Allegato, Giorgio, Lorenzo Corso, and Carlo Valzasina. "Inertial Sensors." In Silicon Sensors and Actuators, 439–75. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_13.

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Duqi, Enri, Giorgio Allegato, and Mikel Azpeitia. "Pressure Sensors." In Silicon Sensors and Actuators, 523–41. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_16.

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Hameed, Mohamed Farhat O., A. Samy Saadeldin, Essam M. A. Elkaramany, and S. S. A. Obayya. "Introduction to Silicon Photonics." In Computational Photonic Sensors, 73–90. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-76556-3_4.

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Alessandri, Anna, Filippo D’Ercoli, Pietro Petruzza, and Alessandra Sciutti. "Deep Silicon Etch." In Silicon Sensors and Actuators, 133–67. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_5.

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Hameed, Mohamed Farhat O., A. Samy Saadeldin, Essam M. A. Elkaramany, and S. S. A. Obayya. "Silicon Nanowires for DNA Sensing." In Computational Photonic Sensors, 321–42. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-76556-3_13.

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Conference papers on the topic "Silicon sensors"

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Lemke, Benjamin, Marek E. Schmidt, Johannes Gutmann, Pascal Gieschke, Pedro Alpuim, Joao Gaspar, and Oliver Paul. "Nonlinear piezoresistance of silicon." In 2010 Ninth IEEE Sensors Conference (SENSORS 2010). IEEE, 2010. http://dx.doi.org/10.1109/icsens.2010.5689973.

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Westerveld, Wouter J., Md Mahmud-Ul-Hasan, Cedric Pieters, Roelof A. Jansen, Simone Severi, Veronique Rochus, and Xavier Rottenberg. "Optomechanical ultrasound sensors in silicon photonics." In Silicon Photonics XVI, edited by Graham T. Reed and Andrew P. Knights. SPIE, 2021. http://dx.doi.org/10.1117/12.2576672.

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Knutti, James W. "Silicon Microstructure Sensors." In OE/LASE '89, edited by Alan I. West. SPIE, 1989. http://dx.doi.org/10.1117/12.952157.

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Zhou, Zhiping, and Huaxiang Yi. "Silicon microring sensors." In SPIE LASE, edited by Alexis V. Kudryashov, Alan H. Paxton, and Vladimir S. Ilchenko. SPIE, 2012. http://dx.doi.org/10.1117/12.908551.

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Cao, Li, Chuck Hautamaki, Jia Zhou, Tae Song Kim, and Sue Mantell. "Calibration of MEMS Strain Sensors Fabricated on Silicon." In ASME 2001 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/imece2001/mems-23856.

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Abstract A calibration technique for measuring MEMS strain sensor performance is described. The sensor calibration technique entails developing a repeatable relationship (gage factor) between the change in sensor nominal resistance and the strain measured at the sensor. The calibration technique involves creating a “pseudo” strain sensor consisting of a strain gage mounted on a silicon wafer. Two identical test specimens are evaluated: the pseudo sensor mounted (with adhesive) on an aluminum specimen (or embedded in a specimen), and a MEMS strain sensor mounted on an aluminum specimen (or embedded in a specimen). The dimensions of the silicon wafer for both the pseudo sensor and MEMS sensor are identical. The specimens are loaded by tensile test. For the pseudo sensor specimen, a relationship is established between the strain applied to the specimen (far field strain) and the strain at the sensor (near field strain). Once the relationship between near field and far field strain is known, a relationship between near field strain and change in resistance of the uncalibrated MEMs sensor is established. This relationship between strain at the sensor and change in resistance is the gage factor. Two different MEMS strain sensor designs were fabricated by patterning polysilicon on a 500 micron thick silicon wafer: monofilament and membrane sensors. Gage factors for the MEMS sensors were determined following the calibration procedure. The results also lead to a conclusion that wafer geometry influences the strain transfer to the sensor.

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Chu, Chen-Hing, Tsung-Lin Chou, Chun-Te Lin, and Kuo-Ning Chiang. "Investigation of Packaging Effect of Silicon-Based Piezoresistive Pressure Sensor." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-14208.

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The silicon-based pressure sensor is one of the major applications in the MEMS device. Nowadays, the silicon piezoresistive pressure sensor is a mature technology in industry and its measurement accuracy is more rigorous in many advanced applications. In order to operate the piezoresistive pressure sensor in harsh environment, the silicone get is usually used to protect the die surface and wire bond while allowing the pressure signal to be transmitted to the silicon diaphragm. The major factor affecting the high performance applications of the piezoresistive pressure sensor is the temperature dependence of its pressure characteristics. Therefore, the thermal and packaging effects caused by the silicone gel behaviors should be taken into consideration to obtain better sensor accuracy and sensitivity. For this reason, a finite element method (FEM) is adopted for the sensor performance evaluation, and the thermal and pressure loading is applied on the sensor to study the output signal sensitivity as well as the packaging-induced signal variation, thermal/packaging effect reduction, and output signal prediction for the pressure sensors. The design parameters include silicon die size, silicone gel geometry and its material properties. The simulation results show that the smaller die size and the thicker die thickness can reduce the packaging-induced thermal effect. Furthermore, the different geometry of silicone gel also influences the sensitivity of pressure sensor.

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Lisauskas, Alvydas, Sebastian Boppel, Viktor Krozer, and Hartmut G. Roskos. "Silicon CMOS-based THz detection." In 2011 IEEE Sensors. IEEE, 2011. http://dx.doi.org/10.1109/icsens.2011.6127065.

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Vadekar, A., W. P. Huang, and A. Nathan. "An Integrated Silicon Micromechanical Interferometer." In Optical Fiber Sensors. Washington, D.C.: OSA, 1992. http://dx.doi.org/10.1364/ofs.1992.p40.

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Min-Ho Lee, Suk Won Jung, Wookyeong Seong, Sangdae Lee, and Gyeongshik Kim. "Silicon nanowires for high-sensitivity CRP detection." In 2010 Ninth IEEE Sensors Conference (SENSORS 2010). IEEE, 2010. http://dx.doi.org/10.1109/icsens.2010.5690204.

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Tabib-Azar, Massood, and Wen Yuan. "Tip based chemical vapor deposition of silicon." In 2010 Ninth IEEE Sensors Conference (SENSORS 2010). IEEE, 2010. http://dx.doi.org/10.1109/icsens.2010.5690650.

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Reports on the topic "Silicon sensors"

1

Israel, Scott, and Zoltan Gecse. Characterization of Silicon Sensors for HGCal in CMS. Office of Scientific and Technical Information (OSTI), July 2019. http://dx.doi.org/10.2172/1614730.

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Nhanced Semiconductors, Inc. Development of thinned silicon sensors on 8” wafers. Office of Scientific and Technical Information (OSTI), December 2019. http://dx.doi.org/10.2172/1617211.

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Campanella, Michael, Maral Alyari, and Ron Lipton. Characterization of CMS High Granularity Calorimeter Silicon Sensors. Office of Scientific and Technical Information (OSTI), August 2019. http://dx.doi.org/10.2172/1623362.

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Carey, JE, and E. Mazur. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics. Office of Scientific and Technical Information (OSTI), May 2005. http://dx.doi.org/10.2172/840172.

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Parker, Sherwood I. 3D, Flash, Induced Current Readout for Silicon Sensors. Office of Scientific and Technical Information (OSTI), June 2014. http://dx.doi.org/10.2172/1150720.

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Hendrickson, Benjamin. Dark Current RTS-Noise in Silicon Image Sensors. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.6359.

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Kavelaars, Alicia. Performance of Large Area Silicon Strip-Sensors for GLAST. Office of Scientific and Technical Information (OSTI), March 2003. http://dx.doi.org/10.2172/812950.

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Nabeel Riza. Extreme Environment Silicon Carbide Hybrid Temperature & Pressure Optical Sensors. Office of Scientific and Technical Information (OSTI), September 2010. http://dx.doi.org/10.2172/1013345.

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Luukka, Panja, Teppo Maenpaa, Esa Tuovinen, Lenny Spiegel, and Robert Flight. Tests of Radiation-Hard Silicon Microstrip Sensors for CMS in S-LHC. Office of Scientific and Technical Information (OSTI), February 2011. http://dx.doi.org/10.2172/1022783.

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Brown, Emily R. Diborane Electrode Response in 3D Silicon Sensors for the CMS and ATLAS Experiments. Office of Scientific and Technical Information (OSTI), June 2011. http://dx.doi.org/10.2172/1017226.

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