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Journal articles on the topic 'Silicon sensors'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 March 2023

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1

Szczepański, Zbigniew, and Jerzy Kalenik. "Advanced Assembly Techniques For Silicon Sensors." Journal of Microelectronics and Electronic Packaging 2, no. 1 (January 1, 2005): 8–13. http://dx.doi.org/10.4071/1551-4897-2.1.8.

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Some assembly approaches which were carried out with silicon gas sensor and silicon humidity sensor are presented and described in this paper. Some of these sensors were based on silicon 3-D structures with so called “backside contacts” which need special assembly solutions. Flip chip solder and adhesive bonding were used for silicon humidity sensor. Experimental specifications concerning applied assembly solutions and obtained results are presented and described.

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2

Middelhoek, S., A. A. Bellekom, U. Dauderstadt, P. J. French, S. R. in `t Hout, W. Kindt, F. Riedijk, and M. J. Vellekoop. "Silicon sensors." Measurement Science and Technology 6, no. 12 (December 1, 1995): 1641–58. http://dx.doi.org/10.1088/0957-0233/6/12/001.

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3

van Herwaarden, Sander. "Silicon Sensors." Sensors and Actuators A: Physical 24, no. 2 (July 1990): 171. http://dx.doi.org/10.1016/0924-4247(90)80023-x.

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4

Mubarak, Riyad, Holger Schilke, and Gunther Seckmeyer. "Improving the Irradiance Data Measured by Silicon-Based Sensors." Energies 14, no. 10 (May 12, 2021): 2766. http://dx.doi.org/10.3390/en14102766.

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Silicon-based sensors are widely used for monitoring solar irradiance, in particular, in the field of Photovoltaic (PV) applications. We present a method to correct the global horizontal irradiance measured by silicon-based sensors that reduces the difference to the standard thermopile sensor measurements. A major motivation to use silicon-based sensors for the measurements of irradiance is their lower cost. In addition, their response time is much lower, and their spectral response is much closer to that of the PV systems. The analysis of the differences is based on evaluating four parameters that influence the sensor measurements, namely the temperature, cosine error, spectral mismatch, and calibration factor. Based on the analysis, a correction model is applied to the silicon sensors measurements. The model separates measurements under a clear sky and cloudy sky by combining the clearness index and the solar zenith angle. By applying the correction model on the measurements of the silicon-based sensor, the differences between sensor readings have been reduced significantly. The relative root mean squared difference (rRMSD) between the daily solar irradiation measured by both sensors decreased from 10.6% to 5.4% after applying the correction model, while relative mean absolute difference (rMAD) decreased from 7.4% to 2.5%. The difference in total annual irradiation decreased from 70 KWh/m2 (6.5%) to 15 kWh/m2 (1.5%) by the correction. The presented correction method shows promising results for a further improvement in the accuracy of silicon-based sensors.

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5

Bogue, Robert. "Non-silicon MEMS – the hard and soft alternatives." Sensor Review 36, no. 3 (June 20, 2016): 225–30. http://dx.doi.org/10.1108/sr-03-2016-0057.

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Purpose This paper aims to provide details of MEMS (micro-electromechanical system) sensors produced from materials other than silicon. Design/methodology/approach Following a short introduction, this first considers reasons for using alternatives to silicon. It then discusses MEMS sensor products and research involving sapphire, quartz, silicon carbide and aluminium nitride. It then considers polymer and paper MEMS sensor developments and concludes with a brief discussion. Findings MEMS sensors based on the “hard” materials are well-suited to very-high-temperature- and precision-sensing applications. Some have been commercialised and there is a strong, on-going body of research. Polymer MEMS sensors are attracting great interest from the research community and have the potential to yield devices for both physical and molecular sensing that are inexpensive and simple to fabricate. The prospects for paper MEMS remain unclear but the technology may ultimately find uses in ultra-low-cost sensing of low-magnitude mechanical variables. Originality/value This provides a technical insight into the increasingly important role played by MEMS sensors fabricated from materials other than silicon.

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6

Hollingum, Jack. "SILICON SENSORS MlCROENGINEERING." Sensor Review 12, no. 2 (February 1992): 16–19. http://dx.doi.org/10.1108/eb007873.

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7

Roberts, Jonathan. "Silicon fingerprint sensors." Biometric Technology Today 8, no. 5 (May 2000): 8–10. http://dx.doi.org/10.1016/s0969-4765(00)05012-8.

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8

van Oudheusden, B. W. "Silicon flow sensors." IEE Proceedings D Control Theory and Applications 135, no. 5 (1988): 373. http://dx.doi.org/10.1049/ip-d.1988.0057.

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9

Jain, J. D., and G. S. T. Rao. "Integrated Silicon Sensors." IETE Technical Review 6, no. 3 (May 1989): 210–19. http://dx.doi.org/10.1080/02564602.1989.11438474.

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10

Stemme, G. "Resonant silicon sensors." Journal of Micromechanics and Microengineering 1, no. 2 (June 1, 1991): 113–25. http://dx.doi.org/10.1088/0960-1317/1/2/004.

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11

Sessler, Gerhard M. "Acoustic silicon sensors." Journal of the Acoustical Society of America 95, no. 5 (May 1994): 2885. http://dx.doi.org/10.1121/1.409402.

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12

Wu, Chi-Chang. "Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection." Biosensors 12, no. 2 (February 12, 2022): 115. http://dx.doi.org/10.3390/bios12020115.

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Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire length and number with biomolecule detection. The experimental results revealed that the sensor with a 3 µm nanowire exhibited high sensitivity in detecting low concentrations of HBsAg. However, the sensor reached saturation when the biomolecule concentration exceeded 800 fg/mL. Sensors with 1.6 and 5 µm nanowires exhibited favorable linear sensing ranges at concentrations from 800 ag/mL to 800 pg/mL. The results regarding the number of nanowires revealed that the use of few nanowires in transistor sensors increases sensitivity. The results demonstrate the effects of nanowire dimensions on the silicon NWFET biosensors.

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13

Kal, S., S. Das, and S. K. Lahiri. "Silicon Membranes for Smart Silicon Sensors ." Defence Science Journal 48, no. 4 (January 1, 1998): 423–31. http://dx.doi.org/10.14429/dsj.48.3969.

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14

Jakoby, Bernhard. "Fluidic Physical Sensors and Sensor Systems." Advances in Science and Technology 100 (October 2016): 134–38. http://dx.doi.org/10.4028/www.scientific.net/ast.100.134.

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Silicon-based MEMS technology has furthered the introduction of sensors and actuators in many applications. Particularly in inertial sensing, where no contact with a medium to be sensed is required, highly reliable and cost-effective solutions have been developed. For application in fluidic environments, special demands regarding the interaction can occur. Also, silicon-based technology is not cost-effective in low-volume applications.In our recent work, we thus consider hybrid technologies and concentrate on physical sensor principles, which often provide more robustness in process control and condition monitoring than dedicated chemical sensors featuring chemical reactions with the environment by means of specific chemical interfaces. The latter are frequently prone to reliability issues, e.g. due to poisoning, drift, etc. Examples for physical parameters are thermal and electrical conductivity, permittivity, viscosity, speed of sound, and density. In this contribution, sensing concepts addressing these target parameters are reviewed.

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15

Hsieh, Wen Ching, Wei Ting Tseng, Fuh Cheng Jong, and Hao Tien Daniel Lee. "UV Nonvolatile Sensor Using SANOS Capacitor Device." Materials Science Forum 977 (February 2020): 250–55. http://dx.doi.org/10.4028/www.scientific.net/msf.977.250.

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The silicon-aluminum oxide-nitride-silicon oxide-silicon (hereafter SANOS) could be candidates for ultra violet total dose (hereafter UV TD) nonvolatile sensors. In the case of SANOS UV TD radiation sensors, the UV radiation induces a significant increase of threshold voltage VT. The changes of VT for SANOS after UV radiation have a correlation to the UV TD as well. In this paper, the performance for capacitor types of SANOS UV TD nonvolatile sensor were discussed in detailed. The SANOS capacitor device in this study has demonstrated the better feasibility for UV TD nonvolatile sensor application.

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16

Puumala, Lauren S., Samantha M. Grist, Jennifer M. Morales, Justin R. Bickford, Lukas Chrostowski, Sudip Shekhar, and Karen C. Cheung. "Biofunctionalization of Multiplexed Silicon Photonic Biosensors." Biosensors 13, no. 1 (December 29, 2022): 53. http://dx.doi.org/10.3390/bios13010053.

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Silicon photonic (SiP) sensors offer a promising platform for robust and low-cost decentralized diagnostics due to their high scalability, low limit of detection, and ability to integrate multiple sensors for multiplexed analyte detection. Their CMOS-compatible fabrication enables chip-scale miniaturization, high scalability, and low-cost mass production. Sensitive, specific detection with silicon photonic sensors is afforded through biofunctionalization of the sensor surface; consequently, this functionalization chemistry is inextricably linked to sensor performance. In this review, we first highlight the biofunctionalization needs for SiP biosensors, including sensitivity, specificity, cost, shelf-stability, and replicability and establish a set of performance criteria. We then benchmark biofunctionalization strategies for SiP biosensors against these criteria, organizing the review around three key aspects: bioreceptor selection, immobilization strategies, and patterning techniques. First, we evaluate bioreceptors, including antibodies, aptamers, nucleic acid probes, molecularly imprinted polymers, peptides, glycans, and lectins. We then compare adsorption, bioaffinity, and covalent chemistries for immobilizing bioreceptors on SiP surfaces. Finally, we compare biopatterning techniques for spatially controlling and multiplexing the biofunctionalization of SiP sensors, including microcontact printing, pin- and pipette-based spotting, microfluidic patterning in channels, inkjet printing, and microfluidic probes.

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17

Zhai, Yanxin, Haiwang Li, Zhi Tao, Chunhui Yang, Xiaoda Cao, Zhizhao Che, and Tiantong Xu. "Simulation Analysis and Fabrication of a Silicon Carbide-Based Piezoresistive Accelerometer." Journal of Physics: Conference Series 2246, no. 1 (April 1, 2022): 012007. http://dx.doi.org/10.1088/1742-6596/2246/1/012007.

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Abstract This paper proposes a Micro Electro Mechanical Systems piezoresistive accelerometer based on a whole SiC substrate. Compared with Si-based sensors, SiC-based sensors have stronger mechanical advantages and unique advantages for applications in ultra-high temperature environments. The characteristics of the accelerometer are designed and numerically simulated, and the accelerometer is evaluated in terms of stress load and working frequency band. An innovative design is carried out to eliminate the stress concentration phenomenon in the corner area of the sensor, which guarantees the working safety of the fragile structure of SiC. After fabrication, packaging and vibration experiment, it is found that the sensor’s working sensitivity can reach 0.21mv/g, and its linearity can reach 98%.

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18

Rovira, Meritxell, César Fernández-Sánchez, Silvia Demuru, Paul Kunnel Brince, Danick Briand, and Cecilia Jimenez-Jorquera. "Multisensing Wearable Technology for Sweat Biomonitoring." Engineering Proceedings 6, no. 1 (May 17, 2021): 78. http://dx.doi.org/10.3390/i3s2021dresden-10113.

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This work describes a multisensing wearable platform for monitoring biomarkers in sweat during the practice of exercise. Five electrochemical sensors for pH, potassium, sodium, chloride, and lactate were implemented in a flexible patch approach, together with a paper microfluidic component, to continuously measure sweat composition. The sensors are fabricated with silicon technologies: ion selective field effect transistors (ISFETs) for pH and ionic species; and a gold thin-film microelectrode for lactate. The latter includes a polymeric membrane based on an electropolymerized polypyrroled structure, where all the biocomponents required for carrying out the lactate analyses are entrapped. The flexible patch is fabricated using hybrid integration technologies, including printed pads defined on a polyimide (Kapton®) substrate and wire bonding encapsulation of silicon chips. To fix and align the sensors to the flexible substrate, different laminated materials, such as polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), and silicone-based adhesive, were used. The first results show good performance of the sensors—ISFETS sensitivity between 54–59 mV dec−1 for ion ranges in sweat from 2 to 100 mM and lactate sensor sensitivity of −135 × 102 µA M−1 cm−2 for the range of 2–50 mM. The microfluidic platform has been tested in terms of adequate sensor wettability and rapid response during the time span of exercise activity (2 h) showing excellent results.

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19

Rose, Shane, and Mark Hahn. "A High Temperature, Frequency Output Silicon Temperature Sensor." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000160–63. http://dx.doi.org/10.4071/hiten-ta19.

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Precision high temperature sensors often require temperature compensation. Quartzdyne pressure transducers use a temperature sensitive quartz crystal for compensation. In an effort to shrink transducer packaging, and increase reliability; a prototype frequency output temperature sensor was designed using a 0.8um silicon bulk CMOS process. The 250°C operational sensor is based on a PTAT current generator. The design uses high temperature design techniques that were proven reliable in prior Quartzdyne ASIC's. The output frequency is 34kHz at 30°C, with a sensitivity of 100Hz/°C and achievable accuracy of ±0.3°C from 25°C to 200°C. This paper will review the sensor's characteristics, including the output linearity, hysteresis, accelerated aging and temperature cycling to demonstrate the performance and long term reliability and repeatability of the sensor.

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20

Linevych, Yaroslav Oleksiiovych, and Viktoriia Mykhailivna Koval. "Sensors Based on Nanoscale Silicon 1D Structures for Industrial, Environmental and Medical Monitoring." Microsystems, Electronics and Acoustics 27, no. 2 (August 21, 2022): 264376–1. http://dx.doi.org/10.20535/2523-4455.mea.264376.

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Article is devoted to the analysis of modern sensors based on silicon nanowires (SiNWs) to determine the influence of SiNWs synthesis parameters and their structural features on device characteristics. A modern trend in the development of electronic sensing devices is the use of various types of nanomaterials in order to increase sensor sensitivity and miniaturize of their size. 1D nanomaterials, namely SiNWs, have several advantages for sensor applications, such as a large surface-to-volume ratio and an increased rate of diffusion of the main charge carriers. Based on the literature analysis, an overview of modern SiNWs sensors was made. The advantages of silicon 1D structures were shown by comparison with other types of nanostructures. Also sensors were classified according to the methods of synthesis of SiNWs, sensor principle operation, kind of input value and types of applied modifiers. Silicon nanowires were most often synthesized by the method of metal-stimulated chemical etching, the advantages of which include the simplicity of implementation, low cost, and the ability to synthesize nanostructures with a high aspect ratio. The vapor-liquid-solid synthesis was also used, the advantages of which include the ability to be adapted to any technology of supplying a gas mixture with the target component and the possibility of obtaining nanowires with a diameter of 10 nm or less. According to the principle operation, the most of sensors developed on the basis of silicon nanowires are of electrical type (resistive, capacitive, electrochemical, diode or transistor type), optical sensors (fluorescent) are developed to a much lesser extent. Gas sensors (ethanol, oil vapor, formaldehyde, ammonia, nitrogen oxide, hydrogen, carbon dioxide,), liquid sensors (glucose, hydrogen peroxide, ethanol, heavy metal ions, pH), and physical values (humidity, temperature and illumination) have been developed on the basis of silicon 1D nanoscale structures. The following surface modifiers of nanowires were used to improve the performance characteristics: noble metal nanoparticles, metal-organic framework structures, carbon nanotubes, graphene, self-assembled monolayers, metal and metal oxide thin films. In particular, it was shown that the modification of the surface of the array of SiNWs with noble metals led to an increase in the sensitivity of the hydrogen sensor by 80%. Modification of formaldehyde sensor using reduced graphene oxide resulted in an improvement of sensor sensitivity by more than 2 times. The influence of SiNWs synthesis parameters on sensor performance characteristics was also determined. In particular, it was shown that increasing of SiNWs width from 20–30 nm to 500–600 nm led to an increase in the sensitivity of humidity sensor from 4.5 to 7.5%. Increasing the etching time caused the synthesis of longer nanowires, which improved the sensitivity of carbon dioxide sensors from 0.6 to 2.5%. Dependences established in this work will make it possible to develop the production technology of various types of sensors based on silicon nanowires with high sensitivity, selectivity, stability and operation speed.

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21

Girgin, Alper, Melih Bilmez, Hamid Yadegar Amin, and Tufan Coşkun Karalar. "A silicon Hall sensor SoC for current sensors." Microelectronics Journal 90 (August 2019): 12–18. http://dx.doi.org/10.1016/j.mejo.2019.04.020.

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22

Jofrehei, A., M. Backhaus, P. Baertschi, F. Canelli, F. Glessgen, W. Jin, B. Kilminster, et al. "Characterization of irradiated RD53A pixel modules with passive CMOS sensors." Journal of Instrumentation 17, no. 09 (September 1, 2022): C09004. http://dx.doi.org/10.1088/1748-0221/17/09/c09004.

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Abstract We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150 nm CMOS process. This paper will focus on the characterization of irradiated and non-irradiated pixel modules, composed by a CMOS passive sensor interconnected to a RD53A chip. The sensors are designed with a pixel cell of 25 × 100 μm2 in case of DC coupled devices and 50 × 50 μm2 for the AC coupled ones. Their performance in terms of charge collection, position resolution, and hit efficiency was studied with measurements performed in the laboratory and with beam tests. The RD53A modules with LFoundry silicon sensors were irradiated to fluences up to 1.0 × 1 0 16 n eq c m 2 .

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23

Kwon, Hyunseok, Yurim Park, Pratik Shrestha, and Chun-Gon Kim. "Application of silicon carbide fibers as a sensor for low-velocity impact detection and localization." Structural Health Monitoring 18, no. 5-6 (November 7, 2018): 1372–82. http://dx.doi.org/10.1177/1475921718810398.

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In this study, silicon carbide fiber was proposed as a sensor for detection and localization of low-velocity impacts on composite structures. Semi-conductive silicon carbide fibers have excellent piezoresistivity and good mechanical properties, so their potential as a sensor for low-velocity impact detection and localization was investigated by attaching it on the surface of a composite panel. By measuring the resistance change of the silicon carbide fiber sensor due to low-velocity impacts on the composite material, impacts signals were obtained, and the resistance changes of the silicon carbide fiber sensor were acquired by conversion to voltage using a Wheatstone bridge circuit. The impact signals acquired using the silicon carbide fiber sensors were investigated to analyze the repeatability for impacts at the same location point and impact distinguishability at different points. Finally, impact localization based on a reference database using the silicon carbide fiber sensors attached to the composite panel was performed, and a total of 20 impacts were localized with an average error of 16.2 mm and a maximum error of 39.5 mm for a test section with planar dimensions of 200 mm × 200 mm.

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24

Shi, Xin, Zheng Zheng Guan, and Hua Wu. "Silicon Resonant Micro Pressure Sensor and Micro Resonant Accelerometer." Advanced Materials Research 550-553 (July 2012): 3376–79. http://dx.doi.org/10.4028/www.scientific.net/amr.550-553.3376.

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Silicon micro resonant pressure sensor and accelerometer are kinds of new gauging instruments. Both the silicon micro resonant pressure sensor and accelerometer have the particular advantages and become the key development direction of micro sensors. The introduction of silicon micro resonant pressure sensor is carried out first in this paper. The work theory and development tendency of resonant pressure sensor are discussed in detail. And then, the silicon resonant accelerometer is studied. The research development statuses of resonant beam accelerometer and development tendency are taken to analysis in this paper.

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25

Lin, Qi Bin, and Guang Tao Du. "The Study of a MEMS Magnetic Field Sensor Based on “Cross-Shape” Ferromagnetic Film." Materials Science Forum 694 (July 2011): 523–27. http://dx.doi.org/10.4028/www.scientific.net/msf.694.523.

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Novel magnetic field sensors are based on a “cross-shape” ferromagnetic film (FMF) attached to a silicon diaphragm and piezoresistive membrane. The interaction between the magnetic field and the (FMF) generates a deflection of the diaphragm, which changes the piezoresistance and unbalances a Wheatstone bridge. The effect of FMF and silicon diaphragm thickness on the sensor performance is studied by the finite element simulation. The performance of sensor can be improved by optimizing the size of “cross-shape” FMF. These low-cost, low-power sensors are easily integrated with electronic circuits.

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26

Baratto, C., G. Faglia, G. Sberveglieri, Z. Gaburro, L. Pancheri, C. Oton, and L. Pavesi. "Multiparametric Porous Silicon Sensors." Sensors 2, no. 3 (April 11, 2002): 121–26. http://dx.doi.org/10.3390/s20300121.

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27

Igarashi, Isemi. "Integrated silicon micromechanical sensors." IEEJ Transactions on Industry Applications 108, no. 3 (1988): 218–21. http://dx.doi.org/10.1541/ieejias.108.218.

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28

Hatfield, John V. "Book Review: Silicon Sensors:." International Journal of Electrical Engineering Education 28, no. 4 (October 1991): 378–79. http://dx.doi.org/10.1177/002072099102800423.

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29

Back, Birger, Russell Betts, Rudolf Ganz, Kristjan H. Gulbrandsen, Burt Holzman, Wojtek Kucewicz, Willis T. Lin, et al. "The PHOBOS silicon sensors." Nuclear Physics B - Proceedings Supplements 78, no. 1-3 (August 1999): 245–51. http://dx.doi.org/10.1016/s0920-5632(99)00552-6.

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30

Hartmann, F., T. Bergauer, J. C. Fontaine, M. Frey, A. Furgeri, and M. Krammer. "Corrosion on silicon sensors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 569, no. 1 (December 2006): 80–83. http://dx.doi.org/10.1016/j.nima.2006.09.078.

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31

Middelhoek, S. "Quo vadis silicon sensors?" Sensors and Actuators A: Physical 41, no. 1-3 (April 1994): 1–8. http://dx.doi.org/10.1016/0924-4247(94)80080-4.

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32

van Oudheusden, B. W. "Silicon thermal flow sensors." Sensors and Actuators A: Physical 30, no. 1-2 (January 1992): 5–26. http://dx.doi.org/10.1016/0924-4247(92)80192-6.

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33

Greenwood, J. C. "Silicon in mechanical sensors." Journal of Physics E: Scientific Instruments 21, no. 12 (December 1988): 1114–28. http://dx.doi.org/10.1088/0022-3735/21/12/001.

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34

Greenwood, J. C. "Silicon in mechanical sensors." Journal of Physics E: Scientific Instruments 22, no. 3 (March 1989): 191. http://dx.doi.org/10.1088/0022-3735/22/3/515.

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35

French, P. J., and A. G. R. Evans. "Polycrystalline silicon strain sensors." Sensors and Actuators 8, no. 3 (November 1985): 219–25. http://dx.doi.org/10.1016/0250-6874(85)85004-6.

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36

Lüder, Ernst. "Polycrystalline silicon-based sensors." Sensors and Actuators 10, no. 1-2 (September 1986): 9–23. http://dx.doi.org/10.1016/0250-6874(86)80032-4.

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37

Raskina, Valentina, and Filip Křížek. "Characterization of Highly Irradiated ALPIDE Silicon Sensors." Universe 5, no. 4 (April 14, 2019): 91. http://dx.doi.org/10.3390/universe5040091.

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The ALICE (A Large Ion Collider Experiment) experiment at CERN will upgrade its Inner Tracking System (ITS) detector. The new ITS will consist of seven coaxial cylindrical layers of ALPIDE silicon sensors which are based on Monolithic Active Pixel Sensor (MAPS) technology. We have studied the radiation hardness of ALPIDE sensors using a 30 MeV proton beam provided by the cyclotron U-120M of the Nuclear Physics Institute of the Czech Academy of Sciences in Řež. In this paper, these long-term measurements will be described. After being irradiated up to the total ionization dose 2.7 Mrad and non-ionizing energy loss 2.7 × 10 13 1 MeV n eq · cm - 2 , ALPIDE sensors fulfill ITS upgrade project technical design requirements in terms of detection efficiency and fake-hit rate.

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38

Chen, Ping, Jin Miao, Yin Gu, Fen Huang, Xinyang Zhou, Zhaoyun Leng, Jiefeng Wan, and Chen Li. "Comparative Study on Characteristics of Partial Discharge Optical Pulse and UHF Pulse in Switch Equipment." Journal of Physics: Conference Series 2136, no. 1 (December 1, 2021): 012024. http://dx.doi.org/10.1088/1742-6596/2136/1/012024.

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Abstract The article explores the performance of the new silicon photoelectric sensor in partial discharge detection, and compares the measured optical pulse with the traditional UHF pulse. Through optical and electrical synchronous partial discharge experiments, the article analyzes and discusses the detection performance, working characteristics and statistical characteristics of various sensors, and explores the advantages and feasibility of silicon photoelectric partial discharge sensors in actual discharge monitoring; In addition, the statistical performance of the two physical phenomena of partial light radiation and electromagnetic radiation was obtained through the analysis of optical and electrical synchronous monitoring data. Compared with UHF sensor, silicon photoelectric sensor under the optimal working voltage has a higher signal-to-noise ratio (SNR); Under the electromagnetic interference of the high-frequency motor, silicon photoelectric sensor exhibits better anti-electromagnetic interference ability; Discharge phase interval and characteristics reflected by the PRPD obtained by two detection methods maintain good consistency; Pulse repetition rate has the same trend with applied voltage, but statistical frequency of optical pulses obtained is higher than that of electromagnetic pulses because silicon photoelectric sensor has a higher SNR and single-photon sensitivity.

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39

Cheng, Lixia, Xiaojian Hao, Guochang Liu, Wendong Zhang, Jiangong Cui, Guojun Zhang, Yuhua Yang, and Renxin Wang. "A Flexible Pressure Sensor Based on Silicon Nanomembrane." Biosensors 13, no. 1 (January 12, 2023): 131. http://dx.doi.org/10.3390/bios13010131.

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With advances in new materials and technologies, there has been increasing research focused on flexible sensors. However, in most flexible pressure sensors made using new materials, it is challenging to achieve high detection sensitivity across a wide pressure range. Although traditional silicon-based sensors have good performance, they are not formable and, because of their rigidity and brittleness, they are not suitable for fitting with soft human skin, which limits their application in wearable devices to collect various signals. Silicon nanomembranes are ultra-thin, flexible materials with excellent piezoresistive properties, and they can be applied in various fields, such as in soft robots and flexible devices. In this study, we developed a flexible pressure sensor based on the use of silicon nanomembranes (with a thickness of only 340 nm) as piezoresistive units, which were transferred onto a flexible polydimethylsiloxane (PDMS) substrate. The flexible pressure sensor operated normally in the range of 0–200 kPa, and the sensitivity of the sensor reached 0.0185 kPa−1 in the low-pressure range of 0–5 kPa. In the high-pressure range of 5–200 kPa, the sensitivity of the sensor was maintained at 0.0023 kPa−1. The proposed sensor exhibited a fast response and excellent long-term stability and could recognize human movements, such as the bending of fingers and wrist joints, while maintaining a stable output. Thus, the developed flexible pressure sensor has promising applications in body monitoring and wearable devices.

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Dou, Chuan Guo, Yan Hong Wu, Heng Yang, and Xin Xin Li. "Design, Fabrication and Characterization of a 5x5 Array of Piezoresistive Stress and Temperature Sensors." Key Engineering Materials 503 (February 2012): 43–48. http://dx.doi.org/10.4028/www.scientific.net/kem.503.43.

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This paper reports on the development and characterization of piezoresistive stress and temperature sensors fabricated on silicon-on-insulator (SOI) wafer. The sensor chip consists of a 5x5 array elements enabling the simultaneous measurement of the absolute temperature as well as in-plane stress components in a temperature compensated manner. Each cell comprises a p-type piezoresistor rosette paralleling to the [110] crystal direction of silicon, an n-type piezoresistor rosette along the [100] crystal direction and a temperature sensor. Design, fabrication and characterization of piezoresistive and temperature sensors are described in detail. Moreover, based on the flexible printed circuit board, the prepackaging technique of sensors is reported and the electrical connections between the testing sensors and external measuring devices are achieved, then the changes in resistance versus temperature changes are measured in our experiment, the results show that this approach can be used for the signal measurement of sensor before the second packaging and on-line measurement of packaging stresses.

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Khan, Nabeel, and Maria G. Martini. "Bandwidth Modeling of Silicon Retinas for Next Generation Visual Sensor Networks." Sensors 19, no. 8 (April 12, 2019): 1751. http://dx.doi.org/10.3390/s19081751.

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Silicon retinas, also known as Dynamic Vision Sensors (DVS) or event-based visual sensors, have shown great advantages in terms of low power consumption, low bandwidth, wide dynamic range and very high temporal resolution. Owing to such advantages as compared to conventional vision sensors, DVS devices are gaining more and more attention in various applications such as drone surveillance, robotics, high-speed motion photography, etc. The output of such sensors is a sequence of events rather than a series of frames as for classical cameras. Estimating the data rate of the stream of events associated with such sensors is needed for the appropriate design of transmission systems involving such sensors. In this work, we propose to consider information about the scene content and sensor speed to support such estimation, and we identify suitable metrics to quantify the complexity of the scene for this purpose. According to the results of this study, the event rate shows an exponential relationship with the metric associated with the complexity of the scene and linear relationships with the speed of the sensor. Based on these results, we propose a two-parameter model for the dependency of the event rate on scene complexity and sensor speed. The model achieves a prediction accuracy of approximately 88.4% for the outdoor environment along with the overall prediction performance of approximately 84%.

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Affolder, K., A. Ciocio, E. Cornell, V. Fadeyev, Z. Luce, J. Gunnell, F. Martinez-McKinney, et al. "Automated visual inspection and defect detection of large-scale silicon strip sensors." Journal of Instrumentation 17, no. 03 (March 1, 2022): P03026. http://dx.doi.org/10.1088/1748-0221/17/03/p03026.

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Abstract For the Phase-II Upgrade of the ATLAS Detector, the Inner Detector will be replaced with the Inner Tracker (ITk), consisting of a pixel and a strip tracker. The 17,888 silicon strip detector modules comprising the ITk strip tracker will be assembled from silicon strip sensors and flexes with readout chips in a manual assembly process performed at 20 module assembly sites in a complex distribution chain, which requires quality control steps to be performed after each distribution and assembly step. Sensor quality control requires a visual inspection of the full sensor area (about 100 cm2) of each sensor to detect and log any defects (e.g. scratches, breakdown areas or chipped corners) or contamination. Since manual surveys of full sensor areas for several thousand sensors are both time-consuming and prone to errors, alternative methods were investigated to automate the process and improve its reliability. This paper presents a setup developed to take high-resolution images of full silicon strip sensors with high repeatability quickly and an algorithm developed for the automated detection of defects, built using functions and filters from popular open-source visual processing packages OpenCV and Scikit-image. Methods were developed both for small-scale high-resolution images and full-size sensor images with lower resolution — both are presented here.

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Grappadelli, L. Corelli, and D. C. Coston. "A Photosynthetically Active Radiation Sensor." HortScience 23, no. 1 (February 1988): 215–17. http://dx.doi.org/10.21273/hortsci.23.1.215.

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Abstract A sensor for measuring photosynthetically active radiation was constructed using a silicon photocell in combination with a glass absorption filter. A trimmer potentiometer was used for standardization of sensor output. The sensors were calibrated using a commercially available quantum sensor. Average correlation coefficient between constructed sensors and the standard was 0.94. The sensors had a quantum response, were sensitive only in the wavelengths between 400 and 700 nm, exhibited a linear response to varying PAR light levels, and were inexpensive to construct.

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Westgate, Christopher, and David James. "Visible-Band Nanosecond Pulsed Laser Damage Thresholds of Silicon 2D Imaging Arrays." Sensors 22, no. 7 (March 25, 2022): 2526. http://dx.doi.org/10.3390/s22072526.

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Laser-induced camera damage thresholds were measured for several sensors of three different sensor architectures using a Q-switched Nd:YAG laser in order to determine their pulsed laser-induced damage thresholds. Charge coupled device (CCD), front-side illuminated complimentary metal-oxide semiconductor (FSI CMOS), and back-side illuminated (BSI) CMOS sensors were assessed under laboratory and outdoor environments by increasing the focused laser intensity onto the sensors and recording the sensor output. The damage sites were classified qualitatively into damage types, and pixel counting methods were applied to quantitatively plot damage scale against laser intensity. Probit-fits were applied to find the intensity values where a 95% probability of damage would occur (FD95) and showed that FD95 was approximately the same under laboratory conditions for CCD, FSI CMOS, and BSI CMOS sensors (mean 532 nm FD95 of 0.077 ± 0.01 Jcm−2). BSI CMOS sensors were the most robust to large-scale damage effects—BSI sensor kill was found at approximately 103 Jcm−2, compared to 10 Jcm−2 for FSI CMOS, and between ~1.6 and 2.7 Jcm−2 for CCDs.

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Adam, W., T. Bergauer, D. Blöch, M. Dragicevic, R. Frühwirth, V. Hinger, H. Steininger, et al. "Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker." Journal of Instrumentation 16, no. 11 (November 1, 2021): P11028. http://dx.doi.org/10.1088/1748-0221/16/11/p11028.

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Abstract During the operation of the CMS experiment at the High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker will be exposed to radiation levels that could potentially deteriorate their performance. Previous studies had determined that planar float zone silicon with n-doped strips on a p-doped substrate was preferred over p-doped strips on an n-doped substrate. The last step in evaluating the optimal design for the mass production of about 200 m2 of silicon sensors was to compare sensors of baseline thickness (about 300 μm) to thinned sensors (about 240 μm), which promised several benefits at high radiation levels because of the higher electric fields at the same bias voltage. This study provides a direct comparison of these two thicknesses in terms of sensor characteristics as well as charge collection and hit efficiency for fluences up to 1.5 × 1015 neq/cm2. The measurement results demonstrate that sensors with about 300 μm thickness will ensure excellent tracking performance even at the highest considered fluence levels expected for the Phase-2 Outer Tracker.

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MOKWA, WILFRIED. "ADVANCED SENSORS AND MICROSYSTEMS ON SOI." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 147–53. http://dx.doi.org/10.1142/s0129156400000180.

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In the recent decade microsystem technologies (MST) have become a very important field. A lot of miniaturized sensors and microsystems based on silicon technologies have been developed and are in production now. Airbag control for example is mostly based on silicon acceleration sensors. Besides the existing products new products are emerging like drug delivery systems, labs on chip for DNA-analysis or electronic noses. Using SOI new sensor and actuator concepts have become possible. Dielectric insulation offers new possibilities concerning mechanical, thermal or electrical behavior. Microsensors for high temperature application including CMOS electronics are under development. This paper concentrates on SOI with silicon dioxide as insulating material. It will give examples of sensing and actuating devices based on SIMOX and on bonded wafer technology. In addition an example of a more complex microsystem, a retina implant system, will be given.

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Han, Ji-Hoon, Sung Joon Min, Joon Hyub Kim, and Nam Ki Min. "Reciprocating Arc Silicon Strain Gauges." Sensors 23, no. 3 (January 26, 2023): 1381. http://dx.doi.org/10.3390/s23031381.

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Currently, silicon-strain-gauge-based diaphragm pressure sensors use four single-gauge chips for high-output sensitivity. However, the four-single-gauge configuration increases the number of glass frit bonds and the number of aluminum wire bonds, reducing the long-term stability, reliability, and yield of the diaphragm pressure sensor. In this study, a new design of general-purpose silicon strain gauges was developed to improve the sensor output voltage while reducing the number of bonds. The new gauges consist grid patterns with a reciprocating arc of silicon piezoresistors on a thin glass backing. The gauges make handling easier in the bonding process due to the use of thin glass for the gauge backing. The pressure sensors were tested under pressure ranging from 0 to 50 bar at five different temperatures, with a linear output with a typical sensitivity of approximately 16 mV/V/bar and an offset shift of –6 mV to 2 mV. The new approach also opens the possibility to extend arc strain gauges to half-bridge and full-bridge configurations to further reduce the number of glass frit and Al wire bonds in the diaphragm pressure sensor.

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Jovic, Vesna, Milan Matic, Branko Vukelic, Marko Starcevic, Milce Smiljanic, Jelena Lamovec, and Milos Vorkapic. "Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives." Chemical Industry 65, no. 5 (2011): 497–505. http://dx.doi.org/10.2298/hemind110509044j.

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This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives ?Scotch Weld 2214 Hi-Temp? from ?3M Co.? and ?DM2700P/H848? from ?DIEMAT?, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT) glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit) is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values), which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ?C.

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Takamatsu, Seiichi, Suguru Sato, and Toshihiro Itoh. "Urethane-Foam-Embedded Silicon Pressure Sensors including Stress-Concentration Packaging Structure for Driver Posture Monitoring." Sensors 22, no. 12 (June 14, 2022): 4495. http://dx.doi.org/10.3390/s22124495.

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We propose urethane-foam-embedded silicon pressure sensors, including a stress-concentration packaging structure, for integration into a car seat to monitor the driver’s cognitive state, posture, and driving behavior. The technical challenges of embedding silicon pressure sensors in urethane foam are low sensitivity due to stress dispersion of the urethane foam and non-linear sensor response caused by the non-uniform deformation of the foam. Thus, the proposed package structure includes a cover to concentrate the force applied over the urethane foam and frame to eliminate this non-linear stress because the outer edge of the cover receives large non-linear stress concentration caused by the geometric non-linearity of the uneven height of the sensor package and ground substrate. With this package structure, the pressure sensitivity of the sensors ranges from 0 to 10 kPa. The sensors also have high linearity with a root mean squared error of 0.049 N in the linear regression of the relationship between applied pressure and sensor output, and the optimal frame width is more than 2 mm. Finally, a prototype 3 × 3 sensor array included in the proposed package structure detects body movements, which will enable the development of sensor-integrated car seats.

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Oerke, Alexa, Christina König, Stephanus Büttgenbach, and Andreas Dietzel. "Investigation of Different Piezoresistive Materials to be Integrated into Micromechanical Force Sensors Based on SU 8 Photoresist." Key Engineering Materials 613 (May 2014): 244–50. http://dx.doi.org/10.4028/www.scientific.net/kem.613.244.

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The aim of this scientific work is to present different piezoresistive materials suitable to be integrated into micromechanical force sensors. As material for the mechanical structure of the sensors SU-8 has been chosen because it features favorable characteristics, such as flexible and simple fabrication of micro components through the use of standard UV lithography for forming three dimensional geometries such as cantilevers and membranes. In addition, on the basis of a significantly lower Young’s modulus compared to silicon, great opportunities to improve the force sensitivity of such sensors are offered by SU-8.However, SU-8 photoresist does not have piezoresistive properties, and therefore it has to be combined with an additional, beneficial piezoresistive material. A well-controlled and frequently used material for piezoresistive elements is doped silicon. This paper provides an overview of characteristics such as gauge factor and temperature coefficient of resistance (TCR) for a variety of commonly used piezoresistive materials, namely metals, silicon, conductive composite materials and diamond-like carbon. As a characteristic factor for the estimated sensitivity of the force sensor, the ratio of the gauge factor k to the Young´s modulus E of the structural material is presented for the different material combinations. A classification of conventional silicon based tactile force sensors is made to build a basis for comparison. Furthermore the suitability of different piezoresistive materials for the integration into an SU 8-based sensor is investigated.

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