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Journal articles on the topic 'Silicon sensors'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Szczepański, Zbigniew, and Jerzy Kalenik. "Advanced Assembly Techniques For Silicon Sensors." Journal of Microelectronics and Electronic Packaging 2, no. 1 (2005): 8–13. http://dx.doi.org/10.4071/1551-4897-2.1.8.

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Some assembly approaches which were carried out with silicon gas sensor and silicon humidity sensor are presented and described in this paper. Some of these sensors were based on silicon 3-D structures with so called “backside contacts” which need special assembly solutions. Flip chip solder and adhesive bonding were used for silicon humidity sensor. Experimental specifications concerning applied assembly solutions and obtained results are presented and described.

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2

Mubarak, Riyad, Holger Schilke, and Gunther Seckmeyer. "Improving the Irradiance Data Measured by Silicon-Based Sensors." Energies 14, no. 10 (2021): 2766. http://dx.doi.org/10.3390/en14102766.

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Silicon-based sensors are widely used for monitoring solar irradiance, in particular, in the field of Photovoltaic (PV) applications. We present a method to correct the global horizontal irradiance measured by silicon-based sensors that reduces the difference to the standard thermopile sensor measurements. A major motivation to use silicon-based sensors for the measurements of irradiance is their lower cost. In addition, their response time is much lower, and their spectral response is much closer to that of the PV systems. The analysis of the differences is based on evaluating four parameters

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Gao, Junhua, Liangliang Tian, and Zhengfu Cheng. "Enhancing the Sensitivity of a Thermal Microflow Sensor: A Comprehensive Modeling and Simulation Study." Micromachines 16, no. 2 (2025): 231. https://doi.org/10.3390/mi16020231.

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The advancement of microfluidic technology has introduced new requirements for the sensitivity of microflow sensors. To address this, this paper presents a novel high-sensitivity thermal microflow sensor incorporating a heat-insulating cavity structure. The sensor utilizes porous silicon as the substrate and employs vanadium dioxide as the thermistor element. This study employed COMSOL Multiphysics finite element software 5.6 to investigate the impact of materials and structural factors on the sensor’s sensitivity, as well as considering the dynamic laws governing their influence. Additionally

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Middelhoek, S., A. A. Bellekom, U. Dauderstadt, et al. "Silicon sensors." Measurement Science and Technology 6, no. 12 (1995): 1641–58. http://dx.doi.org/10.1088/0957-0233/6/12/001.

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5

van Herwaarden, Sander. "Silicon Sensors." Sensors and Actuators A: Physical 24, no. 2 (1990): 171. http://dx.doi.org/10.1016/0924-4247(90)80023-x.

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6

Schintke, Silvia, Badil Mujovi, Darja Loiko, and Stefan del Rossi. "Graphite- and Graphene-Based Polymer Nanocomposites for Flexible Sensors and Actuators in Health Care and Soft Robotics Applications." Materials Science Forum 1107 (December 6, 2023): 15–20. http://dx.doi.org/10.4028/p-hrfme1.

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Flexible sensors and actuators have broad applications in the fields of wearable electronics for health, sports, functional textiles, robotics and cobot applications. Graphene-or graphite-based polymer nanocomposites are promising materials for the development of soft sensors and actuators. This study investigates strain sensing properties of silicon rubber with various graphene filler concentrations (8wt%-12wt%). Current-voltage characteristics have been measured under various strains. We obtain that the sensor’s electrical resistance, for a given voltage, can be approximated by a linear fit

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7

Zhu, Ziyi, Shougang Zhang, and Jun Ruan. "Research on Pressure Sensor of Circular Monocrystalline Silicon Chassis." Journal of Physics: Conference Series 2800, no. 1 (2024): 012009. http://dx.doi.org/10.1088/1742-6596/2800/1/012009.

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Abstract Traditional sensors, such as pressure, piezoelectric or piezoresistive, mostly use square silicon-based materials as chassis and use Wheatstone bridge circuits to measure pressure and resistance values. Nowadays, reducing the size of sensors is also a problem to be solved in the increasingly wide range of sensor applications. In this paper, a circular monocrystalline silicon base pressure sensor is designed and its performance is studied. We applied COMSOL software to model the circular chassis base pressure sensor, tested the deformation of the circular chassis base pressure sensor u

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8

Wu, Chi-Chang. "Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection." Biosensors 12, no. 2 (2022): 115. http://dx.doi.org/10.3390/bios12020115.

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Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire le

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9

Bogue, Robert. "Non-silicon MEMS – the hard and soft alternatives." Sensor Review 36, no. 3 (2016): 225–30. http://dx.doi.org/10.1108/sr-03-2016-0057.

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Purpose This paper aims to provide details of MEMS (micro-electromechanical system) sensors produced from materials other than silicon. Design/methodology/approach Following a short introduction, this first considers reasons for using alternatives to silicon. It then discusses MEMS sensor products and research involving sapphire, quartz, silicon carbide and aluminium nitride. It then considers polymer and paper MEMS sensor developments and concludes with a brief discussion. Findings MEMS sensors based on the “hard” materials are well-suited to very-high-temperature- and precision-sensing appli

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10

Ghanam, Muhannad, Peter Woias, and Frank Goldschmidtböing. "MEMS Pressure Sensors with Novel TSV Design for Extreme Temperature Environments." Sensors 25, no. 3 (2025): 636. https://doi.org/10.3390/s25030636.

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This study introduces a manufacturing process based on industrial MEMS technology, enabling the production of diverse sensor designs customized for a wide range of absolute pressure measurements. Using monocrystalline silicon as the structural material minimizes thermal stresses and eliminates temperature-dependent semiconductor effects, as silicon functions solely as a mechanical material. Integrating a eutectic bonding process in the sensor fabrication allows for a reliable operation at temperatures up to 350 °C. The capacitive sensor electrodes are enclosed within a silicon-based Faraday ca

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11

Hsieh, Wen Ching, Wei Ting Tseng, Fuh Cheng Jong, and Hao Tien Daniel Lee. "UV Nonvolatile Sensor Using SANOS Capacitor Device." Materials Science Forum 977 (February 2020): 250–55. http://dx.doi.org/10.4028/www.scientific.net/msf.977.250.

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The silicon-aluminum oxide-nitride-silicon oxide-silicon (hereafter SANOS) could be candidates for ultra violet total dose (hereafter UV TD) nonvolatile sensors. In the case of SANOS UV TD radiation sensors, the UV radiation induces a significant increase of threshold voltage VT. The changes of VT for SANOS after UV radiation have a correlation to the UV TD as well. In this paper, the performance for capacitor types of SANOS UV TD nonvolatile sensor were discussed in detailed. The SANOS capacitor device in this study has demonstrated the better feasibility for UV TD nonvolatile sensor applicat

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12

Jong, Fun-Cheng, and Wen-Ching Hsieh. "Performance Comparison of SONOS-Type UV TD Sensor Using Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon Oxide-Silicon and Indium Tin Oxide-Aluminum Oxide-Hafnium Aluminum Oxide-Silicon Oxide-Silicon." Crystals 13, no. 7 (2023): 1092. http://dx.doi.org/10.3390/cryst13071092.

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This study compares the performance of two types of capacitive devices, indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon oxide-silicon (IAZAOS) and indium tin oxide-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (IAHAOS), as silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory (NVM) total dose of ultraviolet radiation (UV TD) sensors. Results show that IAZAOS with zirconia aluminum oxide as the charge-trapping layer outperforms IAHAOS with hafnium aluminum oxide for a UV TD sensor. After exposure to UV TD irradiation of 100 mW·s/cm2, the threshold voltage

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13

Rovira, Meritxell, César Fernández-Sánchez, Silvia Demuru, Paul Kunnel Brince, Danick Briand, and Cecilia Jimenez-Jorquera. "Multisensing Wearable Technology for Sweat Biomonitoring." Engineering Proceedings 6, no. 1 (2021): 78. http://dx.doi.org/10.3390/i3s2021dresden-10113.

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This work describes a multisensing wearable platform for monitoring biomarkers in sweat during the practice of exercise. Five electrochemical sensors for pH, potassium, sodium, chloride, and lactate were implemented in a flexible patch approach, together with a paper microfluidic component, to continuously measure sweat composition. The sensors are fabricated with silicon technologies: ion selective field effect transistors (ISFETs) for pH and ionic species; and a gold thin-film microelectrode for lactate. The latter includes a polymeric membrane based on an electropolymerized polypyrroled str

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14

Hollingum, Jack. "SILICON SENSORS MlCROENGINEERING." Sensor Review 12, no. 2 (1992): 16–19. http://dx.doi.org/10.1108/eb007873.

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15

Roberts, Jonathan. "Silicon fingerprint sensors." Biometric Technology Today 8, no. 5 (2000): 8–10. http://dx.doi.org/10.1016/s0969-4765(00)05012-8.

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16

van Oudheusden, B. W. "Silicon flow sensors." IEE Proceedings D Control Theory and Applications 135, no. 5 (1988): 373. http://dx.doi.org/10.1049/ip-d.1988.0057.

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17

Jain, J. D., and G. S. T. Rao. "Integrated Silicon Sensors." IETE Technical Review 6, no. 3 (1989): 210–19. http://dx.doi.org/10.1080/02564602.1989.11438474.

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18

Stemme, G. "Resonant silicon sensors." Journal of Micromechanics and Microengineering 1, no. 2 (1991): 113–25. http://dx.doi.org/10.1088/0960-1317/1/2/004.

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19

Sessler, Gerhard M. "Acoustic silicon sensors." Journal of the Acoustical Society of America 95, no. 5 (1994): 2885. http://dx.doi.org/10.1121/1.409402.

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20

Jakoby, Bernhard. "Fluidic Physical Sensors and Sensor Systems." Advances in Science and Technology 100 (October 2016): 134–38. http://dx.doi.org/10.4028/www.scientific.net/ast.100.134.

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Silicon-based MEMS technology has furthered the introduction of sensors and actuators in many applications. Particularly in inertial sensing, where no contact with a medium to be sensed is required, highly reliable and cost-effective solutions have been developed. For application in fluidic environments, special demands regarding the interaction can occur. Also, silicon-based technology is not cost-effective in low-volume applications.In our recent work, we thus consider hybrid technologies and concentrate on physical sensor principles, which often provide more robustness in process control an

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21

El Shamy, Raghi S., Mohamed A. Swillam, and Xun Li. "Comparative Study of Photonic Platforms and Devices for On-Chip Sensing." Photonics 10, no. 11 (2023): 1233. http://dx.doi.org/10.3390/photonics10111233.

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Chemical and biological detection is now an indispensable task in many fields. On-chip refractive index (RI) optical sensing is a good candidate for mass-scale, low-cost sensors with high performance. While most literature works focus on enhancing the sensors’ sensitivity and detection limit, other important parameters that determine the sensor’s yield, reliability, and cost-effectiveness are usually overlooked. In this work, we present a comprehensive study of the different integrated photonic platforms, namely silica, silicon nitride, and silicon. Our study aims to determine the best platfor

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22

Linevych, Yaroslav Oleksiiovych, and Viktoriia Mykhailivna Koval. "Sensors Based on Nanoscale Silicon 1D Structures for Industrial, Environmental and Medical Monitoring." Microsystems, Electronics and Acoustics 27, no. 2 (2022): 264376–1. http://dx.doi.org/10.20535/2523-4455.mea.264376.

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Article is devoted to the analysis of modern sensors based on silicon nanowires (SiNWs) to determine the influence of SiNWs synthesis parameters and their structural features on device characteristics. A modern trend in the development of electronic sensing devices is the use of various types of nanomaterials in order to increase sensor sensitivity and miniaturize of their size. 1D nanomaterials, namely SiNWs, have several advantages for sensor applications, such as a large surface-to-volume ratio and an increased rate of diffusion of the main charge carriers. Based on the literature analysis,

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23

Puumala, Lauren S., Samantha M. Grist, Jennifer M. Morales, et al. "Biofunctionalization of Multiplexed Silicon Photonic Biosensors." Biosensors 13, no. 1 (2022): 53. http://dx.doi.org/10.3390/bios13010053.

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Silicon photonic (SiP) sensors offer a promising platform for robust and low-cost decentralized diagnostics due to their high scalability, low limit of detection, and ability to integrate multiple sensors for multiplexed analyte detection. Their CMOS-compatible fabrication enables chip-scale miniaturization, high scalability, and low-cost mass production. Sensitive, specific detection with silicon photonic sensors is afforded through biofunctionalization of the sensor surface; consequently, this functionalization chemistry is inextricably linked to sensor performance. In this review, we first

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24

Federičová, P., A. Affolder, G. A. Beck, et al. "Setups for eliminating static charge of the ATLAS18 strip sensors." Journal of Instrumentation 19, no. 02 (2024): C02001. http://dx.doi.org/10.1088/1748-0221/19/02/c02001.

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Abstract Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration to be able to track charged particles produced at the High-Luminosity LHC, started in 2020 and is expected to continue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-p silicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on

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25

Kwon, Hyunseok, Yurim Park, Pratik Shrestha, and Chun-Gon Kim. "Application of silicon carbide fibers as a sensor for low-velocity impact detection and localization." Structural Health Monitoring 18, no. 5-6 (2018): 1372–82. http://dx.doi.org/10.1177/1475921718810398.

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In this study, silicon carbide fiber was proposed as a sensor for detection and localization of low-velocity impacts on composite structures. Semi-conductive silicon carbide fibers have excellent piezoresistivity and good mechanical properties, so their potential as a sensor for low-velocity impact detection and localization was investigated by attaching it on the surface of a composite panel. By measuring the resistance change of the silicon carbide fiber sensor due to low-velocity impacts on the composite material, impacts signals were obtained, and the resistance changes of the silicon carb

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26

Shi, Xin, Zheng Zheng Guan, and Hua Wu. "Silicon Resonant Micro Pressure Sensor and Micro Resonant Accelerometer." Advanced Materials Research 550-553 (July 2012): 3376–79. http://dx.doi.org/10.4028/www.scientific.net/amr.550-553.3376.

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Silicon micro resonant pressure sensor and accelerometer are kinds of new gauging instruments. Both the silicon micro resonant pressure sensor and accelerometer have the particular advantages and become the key development direction of micro sensors. The introduction of silicon micro resonant pressure sensor is carried out first in this paper. The work theory and development tendency of resonant pressure sensor are discussed in detail. And then, the silicon resonant accelerometer is studied. The research development statuses of resonant beam accelerometer and development tendency are taken to

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27

Jofrehei, A., M. Backhaus, P. Baertschi, et al. "Characterization of irradiated RD53A pixel modules with passive CMOS sensors." Journal of Instrumentation 17, no. 09 (2022): C09004. http://dx.doi.org/10.1088/1748-0221/17/09/c09004.

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Abstract We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150 nm CMOS process. This paper will focus on the characterization of irradiated and non-irradiated pixel modules

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28

Real, António, Pedro Morais, Bruno Oliveira, Helena R. Torres, and João L. Vilaça. "Remote Monitoring System of Dynamic Compression Bracing to Correct Pectus Carinatum." Sensors 23, no. 9 (2023): 4427. http://dx.doi.org/10.3390/s23094427.

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Pectus carinatum (PC) is a chest deformity caused by disproportionate growth of the costal cartilages compared with the bony thoracic skeleton, pulling the sternum forwards and leading to its protrusion. Currently, the most common non-invasive treatment is external compressive bracing, by means of an orthosis. While this treatment is widely adopted, the correct magnitude of applied compressive forces remains unknown, leading to suboptimal results. Moreover, the current orthoses are not suitable to monitor the treatment. The purpose of this study is to design a force measuring system that could

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29

Kal, S., S. Das, and S. K. Lahiri. "Silicon Membranes for Smart Silicon Sensors ." Defence Science Journal 48, no. 4 (1998): 423–31. http://dx.doi.org/10.14429/dsj.48.3969.

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30

Zhai, Yanxin, Haiwang Li, Zhi Tao, et al. "Simulation Analysis and Fabrication of a Silicon Carbide-Based Piezoresistive Accelerometer." Journal of Physics: Conference Series 2246, no. 1 (2022): 012007. http://dx.doi.org/10.1088/1742-6596/2246/1/012007.

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Abstract This paper proposes a Micro Electro Mechanical Systems piezoresistive accelerometer based on a whole SiC substrate. Compared with Si-based sensors, SiC-based sensors have stronger mechanical advantages and unique advantages for applications in ultra-high temperature environments. The characteristics of the accelerometer are designed and numerically simulated, and the accelerometer is evaluated in terms of stress load and working frequency band. An innovative design is carried out to eliminate the stress concentration phenomenon in the corner area of the sensor, which guarantees the wo

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31

Loi, Angelo, Adriano Lai, Jixing Ye, and Gian-Franco Dalla Betta. "Timing-Optimised 3D Silicon Sensor with Columnar Electrode Geometry." Sensors 25, no. 3 (2025): 926. https://doi.org/10.3390/s25030926.

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Among various silicon sensor technologies, 3D silicon sensors demonstrate significant potential for applications requiring exceptional radiation hardness and intrinsic high time resolutions. Silicon pixel sensors with columnar-type electrodes are already operational within the ATLAS experiment, serving in the previous Inner B-Layer (IBL) and the upcoming Inner Tracking (ITk) detectors. Concurrently, advancements driven by the next-generation LHCb VELO detector have led to the development of fast-timing 3D trench sensors within the INFN TimeSPOT project, achieving intrinsic time resolutions clo

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32

Lin, Qi Bin, and Guang Tao Du. "The Study of a MEMS Magnetic Field Sensor Based on “Cross-Shape” Ferromagnetic Film." Materials Science Forum 694 (July 2011): 523–27. http://dx.doi.org/10.4028/www.scientific.net/msf.694.523.

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Novel magnetic field sensors are based on a “cross-shape” ferromagnetic film (FMF) attached to a silicon diaphragm and piezoresistive membrane. The interaction between the magnetic field and the (FMF) generates a deflection of the diaphragm, which changes the piezoresistance and unbalances a Wheatstone bridge. The effect of FMF and silicon diaphragm thickness on the sensor performance is studied by the finite element simulation. The performance of sensor can be improved by optimizing the size of “cross-shape” FMF. These low-cost, low-power sensors are easily integrated with electronic circuits

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33

Chen, Ping, Jin Miao, Yin Gu, et al. "Comparative Study on Characteristics of Partial Discharge Optical Pulse and UHF Pulse in Switch Equipment." Journal of Physics: Conference Series 2136, no. 1 (2021): 012024. http://dx.doi.org/10.1088/1742-6596/2136/1/012024.

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Abstract The article explores the performance of the new silicon photoelectric sensor in partial discharge detection, and compares the measured optical pulse with the traditional UHF pulse. Through optical and electrical synchronous partial discharge experiments, the article analyzes and discusses the detection performance, working characteristics and statistical characteristics of various sensors, and explores the advantages and feasibility of silicon photoelectric partial discharge sensors in actual discharge monitoring; In addition, the statistical performance of the two physical phenomena

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Rose, Shane, and Mark Hahn. "A High Temperature, Frequency Output Silicon Temperature Sensor." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (2013): 000160–63. http://dx.doi.org/10.4071/hiten-ta19.

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Precision high temperature sensors often require temperature compensation. Quartzdyne pressure transducers use a temperature sensitive quartz crystal for compensation. In an effort to shrink transducer packaging, and increase reliability; a prototype frequency output temperature sensor was designed using a 0.8um silicon bulk CMOS process. The 250°C operational sensor is based on a PTAT current generator. The design uses high temperature design techniques that were proven reliable in prior Quartzdyne ASIC's. The output frequency is 34kHz at 30°C, with a sensitivity of 100Hz/°C and achievable ac

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35

Litvinov, Artur, Maya Etrekova, Boris Podlepetsky, et al. "MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors." Sensors 23, no. 7 (2023): 3760. http://dx.doi.org/10.3390/s23073760.

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The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors’ structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals’ optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta2O5/SiCn+/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors’ high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silico

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Dou, Chuan Guo, Yan Hong Wu, Heng Yang, and Xin Xin Li. "Design, Fabrication and Characterization of a 5x5 Array of Piezoresistive Stress and Temperature Sensors." Key Engineering Materials 503 (February 2012): 43–48. http://dx.doi.org/10.4028/www.scientific.net/kem.503.43.

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This paper reports on the development and characterization of piezoresistive stress and temperature sensors fabricated on silicon-on-insulator (SOI) wafer. The sensor chip consists of a 5x5 array elements enabling the simultaneous measurement of the absolute temperature as well as in-plane stress components in a temperature compensated manner. Each cell comprises a p-type piezoresistor rosette paralleling to the [110] crystal direction of silicon, an n-type piezoresistor rosette along the [100] crystal direction and a temperature sensor. Design, fabrication and characterization of piezoresisti

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Carulla, Maria, Rebecca Barten, Filippo Baruffaldi, et al. "Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection." Sensors 24, no. 3 (2024): 942. http://dx.doi.org/10.3390/s24030942.

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Hybrid pixel detectors have become indispensable at synchrotron and X-ray free-electron laser facilities thanks to their large dynamic range, high frame rate, low noise, and large area. However, at energies below 3 keV, the detector performance is often limited because of the poor quantum efficiency of the sensor and the difficulty in achieving single-photon resolution due to the low signal-to-noise ratio. In this paper, we address the quantum efficiency of silicon sensors by refining the design of the entrance window, mainly by passivating the silicon surface and optimizing the dopant profile

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Adam, W., T. Bergauer, D. Blöch, et al. "Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker." Journal of Instrumentation 16, no. 11 (2021): P11028. http://dx.doi.org/10.1088/1748-0221/16/11/p11028.

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Abstract During the operation of the CMS experiment at the High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker will be exposed to radiation levels that could potentially deteriorate their performance. Previous studies had determined that planar float zone silicon with n-doped strips on a p-doped substrate was preferred over p-doped strips on an n-doped substrate. The last step in evaluating the optimal design for the mass production of about 200 m2 of silicon sensors was to compare sensors of baseline thickness (about 300 μm) to thinned sensors (about 240 μm), which promised s

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Li, Fengchao, Shijin Yan, Cheng Lei, et al. "Design and Fabrication of Silicon Pressure Sensors Based on Wet Etching Technology." Micromachines 16, no. 5 (2025): 516. https://doi.org/10.3390/mi16050516.

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This paper presents a novel silicon-based piezoresistive pressure sensor composed of a silicon layer with sensing elements and a glass cover for hermetic packaging. Unlike conventional designs, this study employs numerical simulation to analyze the influence of varying roughness levels of the sensitive membrane on the sensor’s output response. Simulation results demonstrate that pressure sensors with smoother sensitive membranes exhibit superior performance in terms of sensitivity (5.07 mV/V/MPa), linearity (0.67% FS), hysteresis (0.88% FS), and repeatability (0.75% FS). Furthermore, an optimi

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40

Grappadelli, L. Corelli, and D. C. Coston. "A Photosynthetically Active Radiation Sensor." HortScience 23, no. 1 (1988): 215–17. http://dx.doi.org/10.21273/hortsci.23.1.215.

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Abstract A sensor for measuring photosynthetically active radiation was constructed using a silicon photocell in combination with a glass absorption filter. A trimmer potentiometer was used for standardization of sensor output. The sensors were calibrated using a commercially available quantum sensor. Average correlation coefficient between constructed sensors and the standard was 0.94. The sensors had a quantum response, were sensitive only in the wavelengths between 400 and 700 nm, exhibited a linear response to varying PAR light levels, and were inexpensive to construct.

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Cheng, Lixia, Xiaojian Hao, Guochang Liu, et al. "A Flexible Pressure Sensor Based on Silicon Nanomembrane." Biosensors 13, no. 1 (2023): 131. http://dx.doi.org/10.3390/bios13010131.

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With advances in new materials and technologies, there has been increasing research focused on flexible sensors. However, in most flexible pressure sensors made using new materials, it is challenging to achieve high detection sensitivity across a wide pressure range. Although traditional silicon-based sensors have good performance, they are not formable and, because of their rigidity and brittleness, they are not suitable for fitting with soft human skin, which limits their application in wearable devices to collect various signals. Silicon nanomembranes are ultra-thin, flexible materials with

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Affolder, K., A. Ciocio, E. Cornell, et al. "Automated visual inspection and defect detection of large-scale silicon strip sensors." Journal of Instrumentation 17, no. 03 (2022): P03026. http://dx.doi.org/10.1088/1748-0221/17/03/p03026.

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Abstract For the Phase-II Upgrade of the ATLAS Detector, the Inner Detector will be replaced with the Inner Tracker (ITk), consisting of a pixel and a strip tracker. The 17,888 silicon strip detector modules comprising the ITk strip tracker will be assembled from silicon strip sensors and flexes with readout chips in a manual assembly process performed at 20 module assembly sites in a complex distribution chain, which requires quality control steps to be performed after each distribution and assembly step. Sensor quality control requires a visual inspection of the full sensor area (about 100 c

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Girgin, Alper, Melih Bilmez, Hamid Yadegar Amin, and Tufan Coşkun Karalar. "A silicon Hall sensor SoC for current sensors." Microelectronics Journal 90 (August 2019): 12–18. http://dx.doi.org/10.1016/j.mejo.2019.04.020.

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LINEVYCH, Ya, V. KOVAL, M. DUSHEІKO, and M. LAKYDA. "Humidity Diode Sensors Based on 1D Nanosized Silicon Structures." Science and Innovation 20, no. 3 (2024): 67–81. http://dx.doi.org/10.15407/scine20.03.067.

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Introduction. Humidity measurement is essential in microelectronics, aerospace, biomedical, and food industries, as well as in households for climate control. Currently, various types of devices have been used as humidity sensors: capacitive, resistive, diode, gravimetric, optical structures, field-effect transistors and devices based on surface acoustic waves.Problem Statement. Today, there is a need to develop IC-compatible humidity sensors that have high sensitivityand low cost. To this end, silicon nanowires have been successfully used in resistive and capacitive humidity sensors. However,

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Muhammad, Waqar, Jaeyoon Song, Sehyeon Kim, et al. "Silicon-Based Biosensors: A Critical Review of Silicon’s Role in Enhancing Biosensing Performance." Biosensors 15, no. 2 (2025): 119. https://doi.org/10.3390/bios15020119.

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This review into recent advancements in silicon-based technology, with a particular emphasis on the biomedical applications of silicon sensors. Owing to their diminutive size, high sensitivity, and intrinsic compatibility with electronic systems, silicon-based sensors have found widespread utilization across healthcare, industrial, and environmental monitoring domains. In the realm of biomedical sensing, silicon has demonstrated significant potential to enhance human health outcomes while simultaneously driving progress in microfabrication techniques for multifunctional device development. The

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Colelli, Angelo, Francesco Barile, Giuseppe Eugenio Bruno, et al. "Characterization of Monolithic Active Pixel Sensors for future collider experiments." EPJ Web of Conferences 314 (2024): 00034. https://doi.org/10.1051/epjconf/202431400034.

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In high-energy physics experiments, Monolithic Active Pixel Sensors (MAPS) have become crucial components of vertex and tracking detectors over the past decade due to the integration of readout circuitry with the detection volume in a single chip. The requirement to achieve precise tracking and vertexing capabilities for upgrade of HEP experiments, such as ALICE at LHC and ePIC at EIC, has implied a strong R&D towards an ultra-thin (a few tens of μm), bent, wafer-scale silicon sensors produced with stitching technology. Recent ongoing activities on CMOS silicon sensor testing performed at

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Ghanam, Muhannad, Frank Goldschmidtboeing, Thomas Bilger, Andreas Bucherer, and Peter Woias. "MEMS Shielded Capacitive Pressure and Force Sensors with Excellent Thermal Stability and High Operating Temperature." Sensors 23, no. 9 (2023): 4248. http://dx.doi.org/10.3390/s23094248.

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In this paper, we present an innovative manufacturing process for the production of capacitive pressure and force sensors with excellent thermal stability for high-temperature applications. The sensors, which are manufactured from a stack of two silicon chips mounted via with gold–silicon (Au-Si) or aluminum–silicon (Al-Si) eutectic bonding, are shielded, miniaturized, and allow an operating temperature of up to 500 °C. Compared to conventional methods, the greatest benefit of the manufacturing process is that different sensor dimensions can be produced in the same batch for a wide measuring r

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MOKWA, WILFRIED. "ADVANCED SENSORS AND MICROSYSTEMS ON SOI." International Journal of High Speed Electronics and Systems 10, no. 01 (2000): 147–53. http://dx.doi.org/10.1142/s0129156400000180.

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In the recent decade microsystem technologies (MST) have become a very important field. A lot of miniaturized sensors and microsystems based on silicon technologies have been developed and are in production now. Airbag control for example is mostly based on silicon acceleration sensors. Besides the existing products new products are emerging like drug delivery systems, labs on chip for DNA-analysis or electronic noses. Using SOI new sensor and actuator concepts have become possible. Dielectric insulation offers new possibilities concerning mechanical, thermal or electrical behavior. Microsenso

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Yu, Hengshu, Junbo Wang, Yulan Lu, Bo Xie, Yanlong Shang, and Zhao Liu. "A silicon resonant pressure sensor based on thermal stresses matched structures." Journal of Physics: Conference Series 2740, no. 1 (2024): 012041. http://dx.doi.org/10.1088/1742-6596/2740/1/012041.

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Abstract This paper introduced a silicon resonant pressure sensor based on thermal stress-matched structures to extend the operating temperature range. The sensor designed this time consists of an SOI wafer with a pressure-sensitive diaphragm for pressure sensing and two integrated resonators, a silicon wafer for vacuum packaging, and a glass wafer for additional stress isolation. The multilayer structures were bonded together to form a thermal stress-matched part to address the problem of temperature inflection points of conventional resonant pressure sensors within broad temperature zones. F

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Khan, Nabeel, and Maria G. Martini. "Bandwidth Modeling of Silicon Retinas for Next Generation Visual Sensor Networks." Sensors 19, no. 8 (2019): 1751. http://dx.doi.org/10.3390/s19081751.

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Silicon retinas, also known as Dynamic Vision Sensors (DVS) or event-based visual sensors, have shown great advantages in terms of low power consumption, low bandwidth, wide dynamic range and very high temporal resolution. Owing to such advantages as compared to conventional vision sensors, DVS devices are gaining more and more attention in various applications such as drone surveillance, robotics, high-speed motion photography, etc. The output of such sensors is a sequence of events rather than a series of frames as for classical cameras. Estimating the data rate of the stream of events assoc

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