To see the other types of publications on this topic, follow the link: Silicon solar wafers.
Dissertations / Theses on the topic 'Silicon solar wafers'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 39 dissertations / theses for your research on the topic 'Silicon solar wafers.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.
1
Ruggiero, Christopher W. "Geometry control of recrystallized silicon wafers for solar applications." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/57969.
Full textAbstract:
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2009.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 68).<br>The cost of manufacturing crystalline silicon wafers for use in solar cells can be reduced by eliminating the waste streams caused by sawing ingots into individual wafers. Professor Emanuel Sachs has developed a new method of manufacturing silicon wafers that consists of first, rapidly creating a low quality wafer, and then enhancing its electrical properties in a subsequent step. The result is a high-efficiency wafer produced without the need to saw an ingot into individual wafers. Our objective was to develop a method of encasing the wafer during the recrystallization step to retain the initial geometry of the wafer and eliminate the need for post-process sawing and grinding. Initially, the silicon wafer was sandwiched between parallel Silicon Carbide backing plates during recrystallization, in an effort to preserve the wafer's initial thickness. This technique resulted in a recrystallized wafer with 212 [micro]m of variation along the wafers length, and a normalized variation of [sigma]/[mu] = 0.764 (standard deviation divided by the mean thickness). To improve this variation, a new method was developed by creating a shell enclosure by sintering powder over the wafer and bottom backing plate. With the powder shell encasing technique, the variation was reduced to 28 [micro]m across the wafer, and the normalized variation shrank to [sigma]/[mu] = 0.125. A similar technique was also developed whereby the wafer was first coated in a ceramic slurry and subsequently embedded in a powder shell. The new technique resulted in slightly inferior thickness control than the powder shell technique with 64 [micro]m of variation across the wafer's length and a normalized variation of [sigma]/[mu] = 0.128. However, the technique produced wafers with extraordinary surface finish, and proved to be quite robust in preserving fine detail, an added benefit that could be useful in production. Overall, if thickness variation could be reduced further with the ceramic coating technique, the added benefits that it creates would make it an excellent candidate for use in the recrystallization process.<br>by Christopher W Ruggiero.<br>S.M.
2
Wang, Meng. "Dynamic fracture of solar grade single crystalline silicon wafers." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI081.
Full textAbstract:
La résistance mécanique du silicium cristallin a fait l’objet de plusieurs études notamment à l’état mono-cristallin c’est-à-dire à l’état quasiment pur et pour une microstructure modèle, et aussi pour ses nombreuses applications dans les systèmes photovoltaïques et les semi-conducteurs. Étant donné que la défaillance de ce matériau semi-conducteur augmente le coût de fabrication et diminue l’efficacité et le rendement des dispositifs en silicium, la durabilité de ce matériau est l’un des éléments clé. La propagation de fissures dans le silicium mono-cristallin est l’un des modes de ruine de ces composants. Ce sujet a été étudié durant des nombreuses années, cependant il n’est pas encore complètement compris en raison de la complexité du comportement de la rupture dynamique liée aux phénomènes à petite échelle. Par conséquent, la compréhension des mécanismes de rupture du silicium cristallin comme matériau modèle reste un sujet d’actualité, avec pour objectif in fine d’améliorer la fiabilité et la durabilité des systèmes à base de silicium. Dans ce travail, le comportement à la rupture dynamique de plaques minces (ndlr wafers) de silicium monocristallin de qualité solaire soumis à des charges écaniques a été étudié. Nous avons effectué les essais de rupture sur des tranches minces de silicium (001) en utilisant un appareil de flexion quatre lignes sous chargement quasi-statique. Le processus de rupture de wafers de silicium a été capturé à l’aide d’une caméra rapide puis étudié par analyse d’images. Nous avons étudié la surface de rupture post-mortem via un microscope numérique, un profilomètre à balayage laser ainsi qu’un microscope à force atomique. La source de défaillance de la tranche de silicium a été identifiée par analyse fractographique. En couplant la mesure de vitesse de fissure et l’analyse fractographique, nous déterminons le front de fissure pendant la propagation dynamique de la fissure, ce qui donne une forme qui dépend de la vitesse de propagation de la fissure. Nous révélons ainsi la source des phénomènes de déflexion du plan de clivage (110) - (111) lors de la propagation de fissures à grande vitesse sous l’effet d’un changement multiaxial lors du passage sous les rouleaux. En outre, conjointement avec les simulations par éléments finis, nous avons montré comment la dynamique du front de fissure est contrôlée par la ténacité dynamique qui dépend de l’orientation cristallographique. Enfin, par l’observation des lignes de Wallner sur la surface de fracture - marques qui sont générées par des perturbations linéaires des ondes élastiques au niveau du front de fissure, nous mettons en évidence la nucléation et les caractéristiques non linéaires de ces traces appelées ’front waves’ visibles sur les faciès de rupture des matériaux mono-cristallins lorsque la vitesse de propagation de la fissure se rapproche de la vitesse de Rayleigh<br>Crystalline silicon has attracted substantial attention for decades because of its large applications in solar cells and microelectromechanical systems. The high brittleness of silicon raises wide concerns since the failure of this semiconductor material increases the manufacturing cost and decreases the efficiency of the utilization of Si-based devices. Crack propagation of crystalline silicon is the main cause of catastrophic failure of silicon components. It has been intensively studied but is not fully understood yet due to intricate dynamic fracture behavior linked to small-scale phenomena. Therefore, the development of feasible methods to study the dynamic fracture, as well as the deeper understanding of fracture mechanism of crystalline silicon, are of paramount importance to improve the reliability and durability of Si-based systems for both industrial and scientific practitioners. In this work, dynamic fracture behavior of solar-grade single crystalline silicon wafers under mechanical loads was studied. We carried out fracture experiments on (001) silicon wafers using three-line or four-line bending apparatus under quasi-static loading. The entire fracture process was captured using a high-speed camera and was analyzed by the high-speed imaging technique. We studied the post-mortem fracture surface using a digital microscope, a laser scanning profilometer, as well as an atomic force microscope. The failure source of the silicon wafer was identified using fractographic analysis. Coupling the crack velocity measurement and fractographic analysis, we determined the crack front during dynamic crack propagation, which exhibits a velocity-dependent shape. We revealed the source of (110)-(111) cleavage plane deflection phenomena during high-speeding crack propagation under line-contact effects. Besides, jointly with the finite element simulations, we demonstrated how dynamics of the crack front is governed by the crystallographic direction-dependent dynamic fracture toughness. Finally, in comparison with the Wallner lines on the fracture surface, generated by linear perturbations of elastic waves on the crack front, we highlight the nucleation and strong nonlinear characteristics of out-of-plane corrugation waves, leaving specific markings that alter the surface roughness of asperity-free material
3
Brun, Xavier F. "Analysis of handling stresses and breakage of thin crystalline silicon wafers." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26538.
Full textAbstract:
Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Melkote, Shreyes; Committee Member: Danyluk, Steven; Committee Member: Griffin, Paul; Committee Member: Johnson, Steven; Committee Member: Kalejs, Juris; Committee Member: Sitaraman, Suresh. Part of the SMARTech Electronic Thesis and Dissertation Collection.
4
Lilliestråle, Johan Carl Åke. "Structural properties of Ge doped multicrystalline Silicon wafers and Solar cells." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-18886.
Full textAbstract:
The efficiency of multi crystalline silicon solar cells is around 17% but the theoretical limit is 33,7 %. Impurities and dislocations are the main sources for degradation of the solar cell efficiency, especially the combination. Dislocations are also responsible for plastic deformation of materials. To improve the solar cell efficiency it is important to reduce the dislocation density in the raw material for solar cells. The nucleation and multiplication of dislocations in wafer can be suppressed by doping it with a method called solid solute strengthening. In solar cells, the minority carrier lifetime, internal quantum efficiency and the solar cell efficiency are also affected by germanium despite although it is, electrically inactive in the silicon lattice. In this thesis I have studied how all these factors are affected by germanium with different experimental methods. The main goal is to conclude if germanium could be a cost effective dopant in future solar cell production.
5
Dallas, William. "Resonance ultrasonic vibrations (RUV) for crack detection in silicon wafers for solar cells." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001848.
Full text
6
Zhao, Lv. "On the fracture of solar grade crystalline silicon wafer." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI134/document.
Full textAbstract:
La rentabilité des cellules à base de silicium est un point essentiel pour le marché photovoltaïque et cela passe notamment par l'amélioration du rendement électrique, la baisse des coûts de production ainsi que le renforcement de la fiabilité/durabilité des wafers. Des procédés innovants émergent, qui permettent d'obtenir des wafers ultra minces avec moins de perte de matière première. Cependant il est nécessaire de mettre en place des méthodes de caractérisation afin d’analyser la rigidité et la tenue mécanique de ces matériaux. Dans ce travail, des essais de flexion ont été effectués pour caractériser à la fois la rigidité et la rupture. Afin d’étudier la rupture fragile, une caméra rapide a été utilisée, des analyses fractographiques ont été menées. La diffraction d'électrons rétrodiffusés et la diffraction par rayon X de Laue ont été utilisées afin d'explorer le lien entre les orientations cristallographiques et les comportements observés. Conjointement, des simulations numériques EF ont été mise en place. Grâce à ce couplage expériences-simulations numériques, une caractérisation fiable de la rigidité des wafers a été effectuée. Une stratégie d'identification de l'origine de la rupture est également proposée. L'étude de la rupture du silicium monocristallin a mis en évidence la stabilité du clivage (110), la grande vitesse d'amorçage de la fissure, la dépendance de la forme du front de fissure à la vitesse de propagation ainsi que l'apparition de "Front Waves" pour les fissures à très grande vitesse. L'étude de la rupture des wafers multi-cristallins démontre une fissuration intra-granulaire. Des éprouvettes jumelles ont permis d’étudier la répétabilité du chemin de fissuration : une attention particulière a été portée à la nature des plans de clivage ainsi que l'effet des joints de grains. Enfin, une modélisation par la méthode des éléments finis étendus est proposée. Elle permet de reproduire le chemin de fissuration expérimentalement observé<br>The profitability of silicon solar cells is a critical point for the PV market and it requires improved electrical performance, lower wafer production costs and enhancing reliability and durability of the cells. Innovative processes are emerging that provide thinner wafers with less raw material loss. But the induced crystallinity and distribution of defects compared to the classical wafers are unclear. It is therefore necessary to develop methods of microstructural and mechanical characterization to assess the rigidity and mechanical strength of these materials. In this work, 4-point bending tests were performed under quasi-static loading. This allowed to conduct both the stiffness estimation and the rupture study. A high speed camera was set up in order to track the fracture process thanks to a 45° tilted mirror. Fractographic analysis were performed using confocal optical microscope, scanning electron microscope and atomic force microscope. Electron Back-Scatter Diffraction and Laue X-Ray diffraction were used to explore the relationship between the microstructural grains orientations/textures of our material and the observed mechanical behavior. Jointly, finite element modeling and simulations were carried out to provide auxiliary characterization tools and help to understand the involved fracture mechanism. Thanks to the experiment-simulation coupled method, we have assessed accurately the rigidity of silicon wafers stemming from different manufacturing processes. A fracture origin identification strategy has been proposed combining high speed imaging and post-mortem fractography. Fracture investigations on silicon single crystals have highlighted the deflection free (110) cleavage path, the high initial crack velocity, the velocity dependent crack front shape and the onset of front waves in high velocity crack propagation. The investigations on the fracture of multi-crystalline wafers demonstrate a systematic transgranular cracking. Furthermore, thanks to twin multi-crystalline silicon plates, we have addressed the crack path reproducibility. A special attention has been paid to the nature of the cleavage planes and the grain boundaries barrier effect. Finally, based on these observations, an extended finite element model (XFEM) has been carried out which fairly reproduces the experimental crack path
7
Hilmersson, Christina. "Detection of Cracks in Single-Crystalline Silicon Wafers Using Impact Testing." Scholar Commons, 2006. http://scholarcommons.usf.edu/etd/3789.
Full textAbstract:
This thesis is about detection of cracks in single-crystalline silicon wafers by using a vibration method in the form of an impact test. The goal to detect cracks from vibration measurements introduced by striking the silicon wafer with an impact hammer. Such a method would reduce costs in the production of solar cells. It is an inexpensive, relatively simple method which if commercialized could be used as an efficient in-line production quality test.
A hammer is used as the actuator and a microphone as the response sensor. A signal analyzer is used to collect the data and to compute frequency response. Parameters of interest are audible natural frequencies, peak magnitudes, damping ratio and coherence.
The data reveals that there are differences in frequency between the cracked silicon wafers and the non-cracked silicon wafers. The resonant peaks in the defective wafers were not as sharp (i.e., lightly damped) and occurred at lower frequencies (i.e., lower stiffness) with a lower magnitude and a higher damping ratio. These differences could be used to detect damaged product in a solar cell production line.
8
Chiguluri, Praneeth. "Quasi-steady-state Photoluminescence Lifetime Imaging of p- and n-type Multicrystalline Silicon Wafers." Ohio University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1300311806.
Full text
9
Monastyrskyi, Andrii. "Resonance ultrasonic vibrations and photoluminescence mapping for crack detection in crystalline silicon wafers and solar cells." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002779.
Full text
10
Carton, Louise. "Mechanical properties of thin silicon wafers for photovoltaic applications : Influence of material quality and sawing process." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI107.
Full textAbstract:
Le wafer de silicium cristallin est le composant clé de la cellule solaire et représente une part significative du prix du module photovoltaïque. La réduction de l’épaisseur des wafers offre donc une voie privilégiée pour diminuer les coûts de production de l’énergie solaire. Le maintien de faibles taux de casse lors de la manipulation de ces fines plaquettes reste cependant un obstacle majeur. Dans ce contexte, il est primordial d’améliorer notre compréhension des mécanismes de fragilisation et de rupture des wafers. Ce travail étudie les propriétés mécaniques des wafers de silicium obtenus par découpe au fil diamanté. Nous avons développé une méthodologie de caractérisation mécanique adaptée à l’extrême fragilité de ces échantillons, en combinant des essais de rupture en flexion 4-lignes, biaxiale ainsi que des sollicitations dynamiques par chocs. En parallèle, des simulations par la méthode des éléments finis ont été implémentées afin de mieux comprendre les phénomènes en jeu. Des essais réalisés sur des échantillons bruts de découpe, attaqués chimiquement et recuits thermiquement ont révélé que l’endommagement le plus critique pour la défaillance mécanique se situe dans une couche de faible épaisseur inférieur à 3 µm) sous la surface, dont les propriétés sont contrôlées par l’étape de découpe. Au travers d’une vaste campagne de caractérisation sur des wafers de différentes épaisseurs (de 180 à 100 µm), nous avons montré que l’amincissement des plaquettes permet un gain de flexibilité sans diminution de la résistance mécanique intrinsèque, mais qui s’accompagne d’un risque plus élevé de rupture suite à un impact sur la tranche. Enfin, nous avons mis en évidence que les défauts structurels dans le silicium multicristallin et mono-like sont indirectement responsables de la diminution de la résistance à rupture des wafers : la difficulté accrue du fil à traverser ces défauts se traduit par des microfissures plus profondes<br>The crystalline silicon wafer is the key component of the solar cell and accounts for a significant portion of the total photovoltaic (PV) module cost. Reducing wafer thickness is therefore a privileged pathway to decrease solar energy production costs. Maintaining low breakage rates when processing such thin samples remains however challenging. In this context, it is essential to improve our understanding of the mechanisms responsible for wafer embrittlement and failure. This work investigates the mechanical properties of silicon wafers obtained using diamond wire sawing. We developed a mechanical characterization methodology suited for these thin, brittle samples, combining destructive tests with 4-line bending, biaxial bending and dynamic impacts. In parallel, finite element simulations were implemented to better understand the underlying phenomena. Tests performed on as-cut, chemically etched and annealed samples revealed that the most critical damage regarding mechanical failure is located within a thin subsurface layer (less than 3 µm), which properties are controlled by the sawing step. Through an extensive characterization campaign on wafers with different thicknesses (from 180 to 100 µm), we demonstrated that thinner samples exhibit an increased bending flexibility without alteration of their intrinsic mechanical strength, accompanied however by a higher risk of failure following an impact. Finally, we highlighted that the presence of structural defects in multicrystalline and mono-like silicon is indirectly responsible for the lower fracture strength of the wafers: the increased suffering of the diamond wire when cutting through these defects generates indeed deeper microcracks
11
Machado, Taila Cristiane Policarpi Alves. "Implementa??o de emissores p+com diferentes dopantes para c?lulas solares n+np+ finas." Pontif?cia Universidade Cat?lica do Rio Grande do Sul, 2018. http://tede2.pucrs.br/tede2/handle/tede/8010.
Full textAbstract:
Submitted by PPG Engenharia e Tecnologia de Materiais (engenharia.pg.materiais@pucrs.br) on 2018-04-24T14:42:28Z
No. of bitstreams: 1
Dissertacao Taila Final.pdf: 2384346 bytes, checksum: 8e3d52f21033cdc04d8f1c3449453ceb (MD5)<br>Approved for entry into archive by Sheila Dias (sheila.dias@pucrs.br) on 2018-05-08T19:50:29Z (GMT) No. of bitstreams: 1
Dissertacao Taila Final.pdf: 2384346 bytes, checksum: 8e3d52f21033cdc04d8f1c3449453ceb (MD5)<br>Made available in DSpace on 2018-05-08T20:07:12Z (GMT). No. of bitstreams: 1
Dissertacao Taila Final.pdf: 2384346 bytes, checksum: 8e3d52f21033cdc04d8f1c3449453ceb (MD5)
Previous issue date: 2018-02-28<br>Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior - CAPES<br>The solar cells manufactured in n-type silicon, doped with phosphorus, do not present
light induced degradation and they have the potential of achieving high efficiency due
to the larger minority charge carrier lifetime. Besides, they are less susceptible to
contamination by metal impurities. The aim of this work was to analyze different
dopants to obtain the p+ region in n+np+ solar cells manufactured in Czochralski silicon
wafers, solar grade, n-type, 120 ?m thick. The acceptor impurities used were B, Al,
Ga, GaB and AlGa, deposited by spin-on and diffused at high temperature. The
temperature, time and gases used in the process of diffusion were ranged. The sheet
resistances (R?) of the diffused regions and the impurity concentration profiles were
measured. We concluded that the B and GaB can be diffused at 970? C for 20 min to
obtain p+ emitters with values of R? suitable to the production of solar cells with screenprinted
metal grid. The Ga and AlGa require high temperatures (greater than 1100? C)
and long times to produce doping profiles compatible with the production of solar cells.
The Al did not produce low sheet resistance regions, even at temperatures of 1100?
C. The use of argon gas instead of the nitrogen did not lead to the decreasing of the
sheet resistance. The GaB is the only one doping material analyzed that can be a
viable replacement for the B in the production of p+ emitter in n-type solar cells.The
GaB was the only one doping material analyzed that allowed the manufacture of solar
cells with the maximum efficiency of 13.5%, with the diffusion performed at 1020? C
for 20 min. The FF was the main parameter that reduced the efficiency of solar cells
doped with GaB when compared to the boron doped cells due to a lower shunt
resistance. The n+np+ solar cell, 120 ?m thick, that achieved the highest efficiency was
doped with boron and reached 14.9%, a value higher than the previously obtained in
studies in the NT-Solar with thin silicon wafers.<br>As c?lulas solares fabricadas em l?minas de sil?cio tipo n, dopadas com f?sforo,
n?o apresentam degrada??o por ilumina??o e t?m potencial de obten??o de maior
efici?ncia devido ao maior valor do tempo de vida dos portadores de carga
minorit?rios. Adicionalmente, s?o menos suscept?veis ? contamina??o por impurezas
met?licas. O objetivo deste trabalho foi realizar uma an?lise de diferentes dopantes
para obten??o da regi?o p+ em c?lulas solares n+np+fabricadas em l?minas de sil?cio
Czochralski, grau solar, tipo n, com espessura de 120 ?m. Os elementos aceitadores
utilizados foram o B, Al, Ga, GaB e AlGa, depositados por spin-on e difundidos em
alta temperatura. Foram variadas as temperaturas, os tempos e os gases utilizados
no processo de difus?o. Foi medida a resist?ncia de folha (R?) das regi?es difundidas
e o perfil de concentra??o de impurezas em fun??o da profundidade. Foram
desenvolvidas c?lulas solares com B, Ga, GaB e Al. Verificou-se que o B e GaB podem
ser difundidos em temperatura de 970 ?C e por 20 min para obten??o de emissores
com valores de R? compat?veis com a produ??o de c?lulas solares metalizadas por
serigrafia. O Ga e AlGa necessitam de altas temperaturas (maiores que 1100 ?C) e
tempos elevados para produzir perfis de dopantes compat?veis. O Al n?o produziu
regi?es p+ de baixa R?, mesmo com a difus?o a 1100 ?C. O uso de Ar para substituir
o N2 n?o acarretou em diminui??o da resist?ncia de folha. O GaB foi o ?nico dopante
analisado que permitiu a fabrica??o de c?lulas solares com efici?ncia m?xima de 13,5
%, com difus?o a 1020 ?C por 20 min. O fator de forma foi o principal par?metro que
reduziu a efici?ncia dos dispositivos com GaB quando comparado ao valor obtido com
B devido a menor resist?ncia em paralelo. A c?lula solar n+np+ de 120 ?m de maior
efici?ncia produzida neste trabalho foi dopada com boro e atingiu a efici?ncia de 14,9
%, sendo maior que as anteriormente obtidas em trabalhos realizados no NT-Solar
com l?minas finas.
12
Letty, Elénore. "Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI094/document.
Full textAbstract:
Les cellules photovoltaïques à base de silicium cristallin représentent plus de 90% du marché photovoltaïque mondial. Des architectures de cellules à haut rendement de conversion sont actuellement développées. Pour atteindre leurs performances maximales, ces architectures nécessitent néanmoins une amélioration des propriétés électriques des substrats de silicium cristallin. Les objectifs de cette thèse sont d’identifier les défauts limitant les propriétés électriques de ces substrats, de comprendre les mécanismes menant à leur formation et de proposer des moyens permettant leur neutralisation. Les matériaux étudiés sont des plaquettes de silicium Czochralski de type n, généralement utilisé pour les applications à haut rendement. Le four de tirage Czochralski a d’abord été modélisé afin de comprendre comment le passé thermique subi par le lingot de silicium lors de la cristallisation affecte la génération des défauts. Ces travaux ont été confirmés via des confrontations avec des données expérimentales, en utilisant une méthode originale développée dans le cadre de ce travail. Nous avons ensuite étudié l’influence du budget thermique lié aux procédés de fabrication des cellules sur la population de défauts. Nous avons ainsi pu montrer que la nature des défauts limitant les propriétés électriques du silicium était grandement modifiée selon le procédé de fabrication de cellules utilisé. Nous avons en outre mis en évidence une dégradation inattendue des propriétés électriques du silicium Czochralski de type n sous illumination, liée à la formation d’un défaut volumique inconnu. Les conditions de formation et de suppression de ce défaut ont été étudiées en profondeur. Enfin, les principaux défauts limitant les propriétés électriques du silicium ayant été identifiés et les mécanismes menant à leur formation compris, nous proposons dans un dernier chapitre des nouvelles techniques de caractérisation permettant de détecter les plaquettes défectueuses en début de ligne de production de cellules photovoltaïques, et ce à une cadence industrielle<br>Photovoltaic solar cells based on crystalline silicon represent more than 90% of the worldwide photovoltaic market. High efficiency solar cell architectures are currently being developed. In order to allow their maximal performances to be reached, the electronic properties of their crystalline silicon substrate must however be enhanced. The goals of the present work are to identify the defects limiting the electronic properties of the substrate, to understand the mechanisms leading to their formation and to propose routes for their neutralization. The studied materials are n-type Czochralski silicon wafers, usually used as substrates for high efficiency photovoltaic applications. The Czochralski puller was first modeled in order to understand how the thermal history experienced by the silicon ingot during crystallization affects the defects generation. This study were validated through the comparison with experimental data using an original method developed in the frame of this work. We then studied the influence of the thermal budget associated to solar cell fabrication processes on the defects population. We thus showed that the nature of lifetime-limiting defects was completely changed depending on the solar cell fabrication process. Besides, we evidenced an unexpected degradation of the electronic properties of n-type Czochralski silicon under illumination, related to the formation of an unknown bulk defect. The formation and deactivation features of this defect were extensively studied. Finally, the main limiting defects being identified and the mechanisms resulting in their formation understood, we propose in a last chapter new characterization techniques for the detection of defective wafers at the beginning of production lines at an industrial throughput
13
Schmich, Evelyn Karin. "High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells." München Verl. Dr. Hut, 2008. http://d-nb.info/992162874/04.
Full text
14
Lippold, Marcus. "Beiträge zum Verständnis des sauren nasschemischen Ätzens von Silicium." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2014. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-145077.
Full textAbstract:
Der Siliciumauflöseprozess in HF-HNO3-H2SO4/H2O-Lösungen unterscheidet sich vom Ätzprozess in HF-HNO3-H2O-Standardmischungen in Bezug auf die Reaktivität gegenüber Silicium, erzielte Oberflächenmorpholgien sowie die beim Ätzen entstehenden gelösten und gasförmigen Produkte. Durch die Behandlung in H2SO4-reichen HF-HNO3-H2SO4/H2O-Lösungen werden auf Siliciumwafern Texturen mit hoher Rauigkeit und geringer Reflexion erzeugt. mc-Si-Solarzellen texturiert durch eine H2SO4-reiche Ätzlösung weisen vergleichend zu Solarzellen mit Standardtexturen höhere Wirkungsgrade auf. In HF-HNO3-H2SO4/H2O-Lösungen mit hohen Schwefelsäurekonzentrationen (c(H2SO4) > c(H2O)) wirkt sowohl das Salpetersäuremolekül HNO3 als auch das Nitrylion NO2+ als Oxidationsmittel. Trifluorsilan HSiF3 und Hexafluordisiloxan F3SiOSiF3 wurden erstmalig als gasförmige Produkte des sauren nasschemischen Ätzens identifiziert. Anhand von Modellreaktionen zur Reaktivität von Nitrylionen wurde deren Reduktionssequenz im Siliciumätzprozess aufgeklärt.
15
Chen, Yu-Ruei, and 陳昱睿. "Selective emitter solar cell fabrication using thin silicon wafers." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/57723977854075354452.
Full textAbstract:
碩士<br>國立中興大學<br>光電工程研究所<br>101<br>Abstract
In this study we use double textured CZ silicon , application in standard solar cell process , and we found that the conversion efficiency is reduced with the reduction of wafer thickness. Speculation for a reason , the impuritie at surface was recombine seriously , so we used selective emitter process to improve surface recombine.
To make the selective emitter , we used etching back method to reduce surface impurities concentration at the illumination area . The etching back methods was using phosphorous doping in P-type wafer and use the wet-oxidation solution then removing the oxide by HF. It can observe that the impurities concentration at interface will decrease. The experiment finds the wet oxidation time in 13 min having the best efficiency. Illumination area . Have high Rsheet about 100 Ω/sq , the metal contact area had low Rsheet about 40 Ω/sq.
This study also discuss selective emitter of finger spacing, we found that finger spacing about 2.3 mm will has the best efficiency，the solar cell of
70 um silicon wafer had the 17.57% efficiency.
16
Guo, Jhao-Yu, and 郭兆渝. "Surface Modification on Silicon Wafers by Atmospheric Pressure Plasma Jet for Texturing Process of Monocrystalline Silicon Solar Cell." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/29337r.
Full textAbstract:
碩士<br>國立臺灣科技大學<br>機械工程系<br>105<br>Wet chemical etching was conducted to increase the surface roughness of the silicon wafers, and atmospheric pressure plasma jet was used by alkaline etching solution to achieve texture structure. The characteristic of surface after the plasma process was analyzed by Water Contact Angle (WCA), surface morphology observed by Field Emission Scanning Electron Microscopy (FE-SEM), and reflectivity data were measured to realize light absorption situation of the sample.
According to the results, the increasing scanning times, substrate to nozzle distance, and power of plasma would have an influence on the outcome of the etching silicon wafer on the surface. Among all of the conditions, when the power was 350W, the distance of substrate to nozzle was 11mm, and scanned for one time under etching at 60ºC for 3 and 5 minutes, the results would be much better compared to the original method for etching of the silicon wafers. The pyramid structures formed on the surface connected tightly, and the reflectivity average value was 5%. The results prove that when the surface was bombarded by atmospheric pressure plasma until the outlook became rugged followed by the etching process could reduce the etching time, elevate the etching rate, and extend the lifespan of the etching solution.
17
TING-WEI, CHEN, and 陳廷維. "Preparation of antireflection Diamond Wire Sawn Silicon Wafers and application on Polycrystalline solar cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/ujdm3p.
Full text
18
Cheng, Yu-Chin, and 鄭玉琴. "A Study of Silicon Wafers Procurement Strategy in Solar Cell Industry –Using a company as an Example." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/s6zkbg.
Full textAbstract:
碩士<br>國立臺北大學<br>企業管理學系碩士在職專班<br>103<br>This study uses silicon wafers materials of solar cell manufacturing company as an example to investigate the effective procurement strategy for improving business operational performance. Special emphases are on material-product competitive factors, factors affecting supplier selection, the supplier’s evaluation methods (Q.C.D.S.) and performance standard, and the supplier’s compliance relationship. By applying extensive literature review, industry five forces, value chain, SWOT analysis, and expert in-depth interviews, a comprehensive evaluation of company A’s procurement management strategy and key successful factors are analyzed.
The empirical findings are summarized as follows. 1. Material testing report is a crucial factor since it affects quality. 2. Among the factors affecting supplier’s selection, production management of suppliers is the most important factors. 3. The quantification of Q.C.D.S. indexes is important in evaluating suppliers. 4. Good interaction with suppliers is very important in order to obtain additional services (including quantity and price). 5. An effective procurement policy are particular important to a low profit margin solar cell manufacturing industry, since it affects directly to production efficiency and profits. This conclusion might provide an important reference for domestic solar cell manufacturers and industrial development.
19
LIU, Jian-Zong, and 劉建宗. "Inspecting Polycrystalline Silicon Solar Wafer for Microcracks." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/64865608002673296508.
Full textAbstract:
碩士<br>中華大學<br>機械工程學系碩士班<br>98<br>It is crucial to disclose micro cracks of a solar wafer no matter they are visible or invisible, otherwise they might break in response to pressures during the subsequent manufacturing process. Statistically, the breakage rate of solar wafers during the manufacturing of solar cells is some 2%. And solar wafer takes about 66% of the cost structure of a solar cell. Accordingly, the failure in revealing cracked wafer in time might raise the overall cost. In view of that, the objective of the study was to develop an automatic optical inspection system specifically for inspecting multicrystalline silicon (mc-si) solar wafer for micro cracks (-crack).
It is not easy to detect invisible -crack. First of all, we need to be able to visualize -crack. Next, we need to be capable of extracting -crack from the captured images. Differ from single crystalline silicon wafers whose backgrounds are homogeneous, mc-si wafers have heterogeneously textured background. Common textured-based flaw detection methods are consequently not suitable for extracting -crack from mc-si wafer. Regardless, it is possible to weaken background or enhance defects and then simplify flaw detection method using an appropriate illumination. In order to successfully detect invisible -crack of silicon-based wafers, we developed a semi-spherical near infrared (NIR) illuminator. Incorporated with the NIR illuminator, the NIR sensitive camera succeeded in capturing -crack images. To meet the speed requirement of in-line inspection, we applied only simple image processing sequences. The experimental results showed that the region-growing-based -crack inspection method is effective in extracting -crack and other defects from cracked images. The overall flaw detection rate is 99.3% and the -crack detection rate is 89.66%.
20
GUO, JIA-WUN, and 郭家文. "MOS Structure Solar Cells on Recycle Silicon Wafer." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/33517042344085475463.
Full textAbstract:
碩士<br>國立臺灣大學<br>電機工程學研究所<br>95<br>Due to the conscious consumption of petroleum, the energy question becomes the main subject in which the humanity concerned much. The solar cell is one of the possible solutions to the about problem. It is of importance to enhance the efficiency and reduce the cost for the solar cell. In this paper, we will investigate the metal-oxide-semiconductor (MOS) structure solar cells by the different methods of oxide preparation in the recycle wafers. We find that the oxides in H2SiF6 solution are useful for MOS solar cells’ application. After the inter-cathode semi-transparent thin Al films deposition, the solar cells’ performance can be improved.
In chapter 2, growth models for rapid thermal processing (RTP) of silicon are introduced. This method can provide good uniformity, but the thickness control is citical. We also discuss the MOS structure solar cells on new and recycle silicon wafer. We can find that the oxides’ surface roughness on new wafer is inferior to that on recycle wafer. However, both of the efficiencies for new and recycle wafer will be greatly reduced when the oxide thickness is greater than 2nm.
In chapter 3, growth models for DC anodization of silicon are introduced. The ultra-thin gate oxides were prepared by anodization in H2O followed by low temperature annealing on new and recycle wafers. In addition, the ultra-thin gate oxides were also prepared by anodization in dilute H2SiF6 solution followed by low temperature annealing. Although, the oxides prepared in pure water reveal electrical better quality in comparison with those prepared in dilute H2SiF6 solution, the performances of the MOS solar cells are on the contrary. In addition, for the oxides prepared the H2SiF6 solution, it was found that almost the efficiencies of recycle and new silicon wafers are the same. Therefore, the recycle wafers for MOS solar cells are of interest since they are cost-effective.
In chapter 4, the conclusion is finally given.
21
GUO, JIA-WUN. "MOS Structure Solar Cells on Recycle Silicon Wafer." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1807200715111500.
Full text
22
Sutejo, Agustina, and 鄭小珍. "Inverted Pyramid Texturing for Solar Monocrystalline Silicon Wafer." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/y46zu5.
Full textAbstract:
碩士<br>國立臺灣大學<br>化學工程學研究所<br>107<br>Texturing is a crucial step for solar cells, especially for monocrystalline silicon to capture more sun light for higher conversion efficiency. A few surface structures could be generated from the texturization of silicon wafer. Among them, the pyramid structure is the most popular one for (100) monocrystalline silicon wafer due to its robustness by using alkaline solution. Because of the longer texturing time is needed, the batch processing is normally used. On the other hand, the inverted pyramid (IP) structures could achieve a better light trapping, but the processing window is narrow. So far, it has not yet been considered in mass production. In the previous research, the IP texturing based on the alkali/isopropyl alcohol (IPA) at high temperature (75 °C- 85 °C) has been reported, but the texturing time is long up to 20 min. There are also other reports using acid solutions, such as HF/HCl/H2O2 at 25 °C or Cu(NO3)2 / HF / H2O2 / H2O solutions at 50 °C, but the processing time was long as well. Another that, there is a report about the IP texturing based on the TMAH solution at 70 °C for 30 min. In this research, a three-step process was proposed. In the first step, the (100) monocrystalline silicon wafers were pretreated by the metal catalytic texturing (MCT) to generate nanoholes. Then, acid solutions containing hydrofluoric (HF) and nitric (HNO3) acids were considered in the second step and then the third step is etching with anisotropic solution. Anisotropic solutions containing tetramethylammonium hydroxide (TMAH) and some additive. In the pretreatment, the silver particles were deposited first by electroless plating using AgNO3 solution, followed by HF etching to generate nanoholes structure. Si porous surface will modified by isotropic etching in HF and HNO3. In this study, nano inverted pyramid structure (NIPs) were obtained by anisotropic etching in TMAH solution with some additives at 25 °C. The reflectivity of monocrystalline before texturing was around 27 % and after texturing the reflectivity became 9.07 %. This texturing technique has a potential to reduce the use of metal component in industries that can pollute the environment.
23
Cheng-AnChien and 簡振安. "The procurement selection models of solar silicon wafer." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/41930432407166603848.
Full textAbstract:
碩士<br>國立成功大學<br>工業與資訊管理學系碩士在職專班<br>102<br>「英文延伸摘要」SUMMARY
This study will explore the purchasing decisions of silicon wafers in the solar industry. Two targets to be met are as follows: a. using the multi-criteria decision analysis model to find the most competitive and efficient silicon wafers; b. setting up an evaluation process to determine the suitable standard for silicon wafer procurement.
This study will first identify the criterion which will affect the procurement assessment and be weighed throughout the Analytical hierarchy process (AHP), then the relative closeness degree of manufacturers by Fuzzy TOPSIS (Fuzzy Technique for Order Preference by Similarity to Ideal Solution Method) will be used for analysis.
This analysis will identify the best selection model for the procurement of solar silicon wafer by Fuzzy TOPSIS and also will consider the 2 of important indices (power wattage of silicon wafer and price satisfaction).
Key words: Solar silicon wafer procurement, AHP, Fuzzy TOPSIS
INTRODUCTION
Because of recent increasing focus on environmental issues, the solar industry is expanding rapidly. Most cell manufactures have now increased their competitiveness by cost controls and increased efficiency. This study will be based the on procurement model, to identify the best suitable model for silicon wafer procurement.
Vendor selection is one kind of non-systematic and complicated multi-criteria problem, which is usually divided into two categories: MADM (multiple attribute decision making) and MODM (multiple objective decision making).Based on the nature of problem, this study will focus on MADM (multiple attribute decision making). According to the literature, we know that quality, delivery date, price and customer service are the most common evaluation criterion.
Purchase assessment model introduction:
1.To simplify the complicated problem into hierarchy system via cross-compare the elements by related experts form several pairwise comparison matrixes, and choose the highest weight for the best selection.
2.Holding meetings for related experts for them to put forward possible solutions.
3.The closest from the positive fuzzy ideal solution and the furthest from the negative fuzzy ideal solution is the best method.
4.Create a model framework of this study is to analyze the study result by proportion matching, sensitivity and also to combine 2 indices (power wattage of solar cell and price satisfaction) of solar cell industry.
The result shows that combining fuzzy TOPSIS and price satisfaction index will be more appropriate method.
MATERIALS AND METHODS
The purchasing models in this study are followings:
Model 1: Using the Analytic Hierarchy Process (AHP) method to evaluate the vendor;
Model 2: Formula of solar silicon wafer purchase estimation = solar silicon wafer satisfaction / actual power wattage of solar silicon wafer;
Model 3: Formula of solar cell purchase estimation = solar silicon wafer satisfaction / price satisfaction.
Satisfaction degree of silicon wafer: Calculating the relative degree of closeness (1-Ci*) between suppliers and positive fuzzy ideal solution by Fuzzy TOPSIS to represent the silicon wafer satisfaction.
Satisfaction degree of price: Changing the actual price to degree of membership means that the acceptable price of customers will be showed as degree of membership formation.
RESULTS AND DISCUSSION
This study will apply the purchase behavior of solar cell manufacturers M into the model to verify the feasibility.
Model 1. Supplier selection by AHP
Dividing the procurement factors into four dimensions and identifying the secondly guidelines:
●Cost: solar cell price, inspection cost
●Quality: incoming material quality, technical capacity
●Schedule: the speed of delivery, delivery performnce
●Management: attitude of customer service, cooperation impression, communication
We compared 4 suppliers with these 9 indexes via Consistency Ratio≦0.1 and got the result as C2 〉 C1 〉 C3 〉 C4.
Model 2. Formula of silicon wafer purchase estimation = solar silicon wafer satisfaction / actual power wattage of solar silicon wafer
1. Calculate the relative degree of closeness (1-Ci*) between suppliers and positive fuzzy ideal solution by Fuzzy TOPSIS to represent the silicon wafer satisfaction.
2. Power wattage is based on actual power efficiency of each supplier.
Result: C2 〉 C3 〉 C4 〉 C1
Model 3: Formula of solar silicon wafer purchase estimation = solar silicon wafer satisfaction / price satisfaction
Statistical the acceptant prices of power wattage from customers and render the price satisfaction by degree of membership.
Result: C2 〉 C1 〉 C4 〉 C3
CONCLUSION
Based on these 3 kinds of results, we can find that model 3 has high degree of comprehensiveness and can be applied into the selection of solar wafer. Recommendations for future research:
1.The new assessment program will cause reversal problem for suppliers, so this study will re-sort suppliers before the purchase, and then will use the estimated re-sorting result as purchasing basis; if any other researchers want to use this model into other industries, it is recommended that the reversal problem of sorting should be considered.
2.TOPSIS analysis requires prior assessing of the criteria to avoid influence from individuals.
3.If this study will be used into other industries, the key measure factors should be found first, and set up the suitable assessment model.
24
Chen, Peng-Yu, and 陳鵬宇. "PRETREATMENT OF SILICON SOLAR WAFER AFTER DIAMOND WIRE SLICING." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/p5mw8n.
Full textAbstract:
碩士<br>大同大學<br>化學工程學系(所)<br>102<br>In recent years, silicon-panel solar cell is still the mainstream in the solar cell market with multi-crystalline silicon being the largest share. There are mainly two types of slicing processes, wire saw slicing and diamond wire slicing that result in different efficiencies of solar cells. The wire saw slicing method has a lower cost, but the diamond wire slicing has a higher productivity and the wire material has relatively higher durability. Therefore, the diamond wire slicing process becomes the mainstream and its development cannot be ignored. However, the lattice structure of silicon has different degrees of damage when the diamond wire slicing was applied. The surface roughness of diamond wire cutting was inadequate after etching process because the produced silicon wafers have higher reflectivity and lower efficiency. Therefore, this study uses hydrofluoric acid, nitric acid and sulfuric acid with different proportions for the purpose of finding the best etchant recipe to increase the surface roughness of the diamond wire cutting wafers for more stringent customers’ demand.
25
CHENG, CHIN-LUNG, and 鄭錦隆. "Study on Pyrolysis of Solar Silicon Wafer Cutting Sludge." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/77084115854131290411.
Full text
26
Chen, Yan-Min, and 陳彥珉. "Fabricate of Silicon Wafer-Based Solar Cell with Edge Electrodes." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/57040484073372209008.
Full text
27
SHIH, CHUNG-HSUN, and 施仲勲. "N-wafer Silicon Solar Cells with Homo/Heterojunction Hybrid Structures." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/hp8tgm.
Full textAbstract:
碩士<br>國立高雄應用科技大學<br>光電與通訊工程研究所<br>103<br>In this study, N-wafer HHHS (Homo-heterojunction hybrid structure) solar cells have better efficiencies than P-wafer HHHS solar cells by AFORS-HET numerical simulation software. Because of spaces exist between Boron and Oxygen, P-type substrate solar cells have serious light attenuation. Because of cells band offset, N-type substrate solar cells have much better Back Surface Field effect than P-type substrate solar cells. The best conversion efficiency of the N-wafer HHHS solar cells are 25.90%, much higher than that (24.49%) of the P-wafer HHHS solar cells. With cell structures choices, HHHS solar cells are better than Sanyo HIT (Heterojunction with intrinsic thin layer) solar cells. The best conversion efficiency of the N-wafer HIT solar cells are 25.00%, and P-wafer HIT solar cells are 23.60%. The best conversion efficiency of HIT solar cells are much lower than HHHS solar cells.
28
Hui-JunLee and 李蕙君. "Silicon Wafer Supply and Capacity Allocation in Solar Cell Industry." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/22919776223298661584.
Full textAbstract:
碩士<br>國立成功大學<br>工業與資訊管理學系碩士在職專班<br>102<br>This study examines the following two issues: The first issue is the allocation of supply of the silicon wafers in the solar industry and the decision of the price. The second issue is how to allocate high efficiency production capacity for the solar cell manufacturer to fulfill customers’ high efficiency demand. This study uses game theory to decide silicon wafer demand allocation and equilibrium price. It then uses mathematical programming to solve the solar cell manufacturer’s high efficiency production capacity allocation. The analysis of this study reveals that the supplier who has higher efficiency wafers has more advantage on price and demand. And, the solar cell manufacturer’s high efficiency capacity shall be allocated to the supplier with a larger increase in the ratio of high efficiency solar cell if the high efficiency process is adopted.
29
Chen, Jiun-Wei, and 陳均維. "Study of Crystalline Silicon Wafer Based Solar Cells with Nano-Silver Particles." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/35374572723841455440.
Full text
30
Chang, Wei-Lun, and 張維倫. "Study of Silicon wafer Solar Cell Mass production Using Potential Induced Degradation Method." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6rckbc.
Full textAbstract:
碩士<br>國立中央大學<br>光電科學與工程學系<br>105<br>In recent years, due to global warming, many countries have been advocating and developing environmental protection using green energy.
Electricity is indispensable to humans; however, nuclear electricity has been consumed as main energy source for almost most of the countries. Many countries and companies have been increasingly aware of the advantage of solar energy to provide a clean and friendly protection to environment and further prevent global warming by investing in solar energy for supporting the effort.
Although solar energy is a great solution for preventing global warming, however, losing electricity power causing by Potential Induced Degradation has been identified as a biggest challenge in Solar energy generation technology.
The purpose of this paper is introduce how to using Oxide generator increase 3nm Oxide between N-junction and CVD to resolve electricity power losing issue caused by Potential Induced Degradation (PID) and through the verification by IEC (International Electro Technical Commission), such innovated technology distance 5mm to the wafer has been validated to be a stable and mature process to allow PID to free for solar cell.
31
Tu, Shang-Ju, and 杜尚儒. "Transparent conducting oxide deposited on silicon wafer for fabrication of heterojunction solar cell." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/92518491055372023528.
Full text
32
曾嘉瑋. "A Study of Silicon Wafer in the Development of Solar Energy Industry in Taiwan." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/7p5cg5.
Full text
33
Yang, Han-Lin, and 楊翰霖. "A Study of Crystallization on Dipped Substrate Wafer Technology for Crystalline Silicon Solar Cells." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/4x94vu.
Full textAbstract:
碩士<br>國立臺灣大學<br>化學工程學研究所<br>107<br>With the shortage of fossil energy and global warming, the urgency of using renewal energy has driven the growth of photovoltaic (PV) industry very rapidly. The global annual installation has been grown over 100 times since 2000 and the annual installation in 2014 was expected to be over 40 GWp. With this rapid development, the silicon solar cell still remains the main stream in the market, and its production cost is lower than 33 cents/Wp. Nevertheless, the silicon wafer is still the major cost. More importantly, the slicing (about 10 cents/Wp) is much more costly than ingot growth, and the silicon kerf loss is over 40 %. Therefore, to further reduce the wafer cost, the development of kerf-free wafer technology is necessary. In fact, the kerf-free technology, such as dip casting, is not new. However, the wafer quality is still not good enough to compete with that from ingot growth due to the defect formation during crystal growth.
In this research, we designed Si3N4 plates as a substrate, so that the wettability of the silicon melt could be controlled. An in-situ infrared rapid thermal furnace will be used to observe the effect of pressure and substrate on the shape of molten silicon on different substrate, so the thickness of the grown silicon can be controlled. Also, the wafer grain structures, such as the grain structure, grain size, grain orientation, and grain boundary evolution, will be investigated. The distribution of the thermal stress and dislocation, as well as the minority carrier lifetime can be measured. We will also modify and improve the process to achieve a better wafer quality by understanding the effect of the substratea temperature, casting speed, and cooling time.
34
Huang, Li-Cyuan, and 黃苙銓. "Effect of wafer thickness and surface recombination velocity on crystalline silicon solar cell efficiency." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/33553219483485167125.
Full textAbstract:
碩士<br>國立東華大學<br>光電工程研究所<br>98<br>In this paper, we used computer simulation tool PC1D to simulate the silicon solar cells for different base layer thickness and surface recombination velocity. And then we used the theory to analyze the result of simulation. The best efficiency of the n+p silicon solar cell with the base layer thickness of 50 um and a low surface recombination velocity of S=100 cm/s is 18.97 %. The best efficiency of n+pp+ silicon solar cells with the base layer thickness of 50 um and a low surface recombination velocity of S=100 cm/s is 19.1 %. At high surface recombination velocity, the n+p structure should have thicker base layer thickness, which can result in a better efficiency. However, the efficiency of n+pp+ structure is higher when the base layer is thinner. Based on these results, regardless of the surface recombination velocity is good or bad, a solar cell with back surface field is possible to use thin silicon wafer and to achieve a high efficiency.
35
HUANG, CHI-FANG, and 黃基芳. "Analyzing the Competitive Advantage of Adopting Big Data Applications in Taiwan Silicon Wafer and Solar Industry." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/z3yr9e.
Full textAbstract:
碩士<br>逢甲大學<br>經營管理碩士在職學位學程<br>106<br>The heightened awareness of the global energy crisis and human well-known renewable sources of energy, particularly the solar energy have caught much attentions. In 2016, President Tsai Ing-wen, actively promoted Taiwan energy transition, offered a “home” 2025 non-nuclear policy objectives, and claimed the dismantlement of its nuclear programs “go longer” policy for the development of renewable energy in a big help.
The study of Taiwan silicon wafer solar industry manufacturers adopts a case study method and focuses on the case company, whose transformation is wisdom for the evolution of the manufacturing process to proven cases and provide constructive step-by-step performance on large data used in the relative advantages of industrial relations. Integrated with existing resources for the effective use of the wisdom of the production actually builds and manages data and mode of operations of the policy-driven evolution of the traditional industries, and it is also the only way to explore the basis and core values. The research methods in this study include the case study, diamond model, 5 forces analysis and SWOT analysis to explore the analysis of global solar silicon wafer industry market competitive advantages and disadvantages.
The purpose of adopting the case comanpy is to analyze the large corporate data, the end of the Internet of integrated environmental management performance, wisdom and information system platform to host applications and large data monitoring critical production unit as the study of specific substantive contribution to try to provide the reference for relevant industry and academia.
Keywords: Solar Industry; Big Data; Diamond Theoretical Models; Five Force Analysis; SWOT Analysis; Case Study Method
36
Schmich, Evelyn Karin [Verfasser]. "High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells / vorgelegt von Evelyn Karin Schmich." 2008. http://d-nb.info/99104911X/34.
Full text
37
Hung, Chien-Hsiung, and 洪健雄. "The Study of Aluminum Oxide Films Grown by Atomic Layer Deposition System and Application on Thin Silicon Wafer Solar Cell." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/70271165252163964745.
Full textAbstract:
碩士<br>國立中興大學<br>電機工程學系所<br>100<br>In this thesis, the thin texture etched Cz silicon wafer with bulk carrier lifetime is 10 us has been used in the standard solar cell process, and observed found that the conversion efficiency is reduced with the reduction of wafer thickness. To improve the structure of solar cell, using to backside mirror polished wafer to reduce transmittance, hence increase the conversion efficiency.
In order to improve the surface recombination velocity, we used the Atomic layer deposition (ALD) technique to deposit Aluminum Oxide thin passivation layer on wafer surface. The film quality is stable when the thickness of films is around 20 nm. The best passivation film with carrier life time 140 us is obtained when samples are annealed at 400℃.
The back electrode contact design was made to match the new passivation process using a laser to open the electrode contact area, and follow with screen printing of metal electrodes. The experimental results reveal significantly improved the conversion efficiency.
38
Yu, Chun-Yen, and 余俊諺. "Material Flow Analysis on Silica Sludge Material in Wafer Process –A Case Study of Solar Energy Plant." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/cm69w2.
Full textAbstract:
碩士<br>國立宜蘭大學<br>綠色科技學程碩士在職專班<br>106<br>Material Flow Analysis is a systematic assessment and can also be referred to as material flow assessment, which mainly uses the mode of operation of the concept of industrial metabolism in industrial ecology to provide a research framework of material recycling methods through the viewpoint of conservation of mass. The calculation of material production, conversion, abandonment, and recycling processes allows for the tracking of substances within a specified time and space scope to provide information on material flows and inventories, which can be subsequently assessed as a policy regarding resources and the environment. It also helps management decision-makers understand the movement of substances between systems and to optimize management and decision-making as well as resource rationalization through analysis. This study uses material flow analysis method and the system boundary to a solar plant as the main body. The time duration is defined as 105 years. The system consists of silicon sludge from a solar plant, including wafer manufacturing volume, raw material usage, raw material recovery, bottom sludge input, low-order silicon carbide production and condensate recovery data. After investigation and analysis in this study, a solar plant can manufacture 52,587,130 pieces of wafer, 3,182,440 kg of cutting oil in raw materials and 2,893,130 kg of cutting powder; The recovery of cutting oil is 4,137,170 kg and the consumption is 1,938,400 kg. After the conversion, the original wafer process to produce a silicon wafer needs 0.0605 kg of cutting fluid;through the use of cutting fluid recovery system,the number reduces to 0.045 kg. The amount of low-order silicon carbide generated was 1,998,650 kg of bottom sludge that was sourced from waste, yielding 1,399,055 kg of low-grade silicon carbide and 499,663 kg of recovered oil and a 5% loss. The analysis of low-order silicon carbide shows that silicon carbide content is, silicon content is 29.78% and water content is 1.87%. The original waste sludge, which has been purified by dry condensing, can become a deoxidizer added to the steel industry during the manufacturing process. Not only does it effectively reduce the processing costs of the waste of a solar plant, but it also re-uses or even turns waste resources into products, reducing the demand for raw materials and greatly reducing the consumption in landfill sites and reducing waste, discard and the risk of dumping. It effectively reduces the burden on evironmental Earth.
39
Brunner, Pierre-Louis Marc. "Dispositifs optoélectroniques à base de semi-conducteurs organiques en couches minces." Thèse, 2015. http://hdl.handle.net/1866/16002.
Full text