Journal articles: 'Silicon Surfaces'

1

Bradley, David. "Snappy silicon surfaces." Materials Today 13, no. 1-2 (January 2010): 13. http://dx.doi.org/10.1016/s1369-7021(10)70012-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Haneman, D. "Surfaces of silicon." Reports on Progress in Physics 50, no. 8 (August 1, 1987): 1045–86. http://dx.doi.org/10.1088/0034-4885/50/8/003.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Li, Gang. "Superhydrophobicity of Silicon-Based Microstructured Surfaces." Advanced Materials Research 989-994 (July 2014): 267–69. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.267.

Full text

Abstract:

Here, a simple method was presented for fabricating superhydrophobic silicon surfaces. Square-pillar-array samples were fabricated on silicon substrates by using the femtosecond laser micromachining technology. We measured the static and dynamic contact angles for water on these surfaces. The contact angles and the rolling angles on the silicon surfaces were measured through an optical contact angle meter. Wettability studies revealed the films exhibited a superhydrophobic behaviour with a higher contact angle and lower rolling angle-a water droplet moved easily on the surface.

APA, Harvard, Vancouver, ISO, and other styles

4

Buriak, Jillian M. "Silicon-Carbon Bonds on Porous Silicon Surfaces." Advanced Materials 11, no. 3 (March 1999): 265–67. http://dx.doi.org/10.1002/(sici)1521-4095(199903)11:3<265::aid-adma265>3.0.co;2-w.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Meieran, Eugene S., Ilan A. Blech, and Michael H. Herman. "Chemography of silicon surfaces." Journal of Applied Physics 57, no. 2 (January 15, 1985): 516–20. http://dx.doi.org/10.1063/1.334785.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Andoh, Yasuko, and Reizo Kaneko. "Microwear of Silicon Surfaces." Japanese Journal of Applied Physics 34, Part 1, No. 6B (June 30, 1995): 3380–81. http://dx.doi.org/10.1143/jjap.34.3380.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Budnitzki, M., and M. Kuna. "Scratching of silicon surfaces." International Journal of Solids and Structures 162 (May 2019): 211–16. http://dx.doi.org/10.1016/j.ijsolstr.2018.11.024.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

McLean, A. B., I. G. Hill, J. A. Lipton Duffin, J. M. MacLeod, R. H. Miwa, and G. P. Srivastava. "Nanolines on silicon surfaces." International Journal of Nanotechnology 5, no. 9/10/11/12 (2008): 1018. http://dx.doi.org/10.1504/ijnt.2008.019830.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

CHABAL, Y. J., A. L. HARRIS, KRISHNAN RAGHAVACHARI, and J. C. TULLY. "INFRARED SPECTROSCOPY OF H-TERMINATED SILICON SURFACES." International Journal of Modern Physics B 07, no. 04 (February 14, 1993): 1031–78. http://dx.doi.org/10.1142/s0217979293002237.

Full text

Abstract:

In this review, the present level of infrared spectroscopy at surfaces is described by using hydrogen-terminated silicon surfaces as model systems. The electronic structure of the adsorbate, H, and the large mass difference between H and Si simplify the interpretation of the data and make it possible for the theories to give reliable quantitative information. In particular, ab initio cluster calculations provide an accurate structural description and precise vibrational frequencies for various surface configurations, and are used as the basis of a priori simulations of the line shape of H on silicon. A special emphasis is given to the recent discovery of chemical etching to prepare H-terminated silicon surfaces because it has greatly helped in understanding structural and dynamical properties of H-terminated silicon surfaces. In particular, both the energy and phase relaxation of the Si-H stretching vibration on the flat, ideally hydrogen terminated Si(111) surface have been measured directly and evidence for vibrational energy diffusion has been obtained on vicinal, H-terminated Si(111) surfaces. The data and current theoretical understanding of the chemically prepared Si(111) surfaces are presented and discussed.

APA, Harvard, Vancouver, ISO, and other styles

10

Muntele, Claudiu. "Microprobing Silicon Surfaces Reveals Low-Resistance Surface Reconstructions." MRS Bulletin 25, no. 12 (December 2000): 5–6. http://dx.doi.org/10.1557/mrs2000.237.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Zemek, J., P. Jiricek, B. Lesiak, and A. Jablonski. "Surface excitations in electron backscattering from silicon surfaces." Surface Science 562, no. 1-3 (August 2004): 92–100. http://dx.doi.org/10.1016/j.susc.2004.05.093.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Rex, Jessica, Scott Perry, and Jessie Lemp. "Concentrations of silicon at silicone hydrogel contact lens surfaces." Contact Lens and Anterior Eye 41 (June 2018): S6. http://dx.doi.org/10.1016/j.clae.2018.04.097.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Follstaedt, D. M., S. M. Myers, W. R. Wampler, and H. J. Stein. "Microstructures of cavity surfaces in silicon." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (August 1992): 334–35. http://dx.doi.org/10.1017/s0424820100122071.

Full text

Abstract:

Helium is insoluble in most materials and forms “bubbles” when it is ion implanted into them. The microstructures of the cavities formed when Si is implanted with He and annealed are of interest for several basic materials science investigations: luminescence of porous structures, stabilities of atomic surfaces and H attachment to Si bonds on the internal cavity surfaces. Such cavities can allow new “surface-science”-type investigations to be conducted, such as the recent determination of the Si-H bond strength (2.5±0.2 eV). We have used cross-section TEM at 200 kV to characterize the cavities formed when (001) Si is implanted with l×1017 He/cm2, 30 keV, at room temperature and then annealed at 700 or 800 °C. The enhancement of internal surface area relative to the wafer surface is quantified, and faceting of the cavities is used to infer the relative stabilities of Si surfaces.

APA, Harvard, Vancouver, ISO, and other styles

14

Hoop, Kelly A., David C. Kennedy, Trevor Mishki, Gregory P. Lopinski, and John Paul Pezacki. "Silicon and silicon oxide surface modification using thiamine-catalyzed benzoin condensations." Canadian Journal of Chemistry 90, no. 3 (March 2012): 262–70. http://dx.doi.org/10.1139/v11-157.

Full text

Abstract:

The benzoin condensation that involves the umpolung coupling of two aldehyde groups has been applied to the formation of functionalized silicon and silicon oxide surfaces using thiamine and other N-heterocyclic carbene (NHC) catalysis in water. This bioorthogonal conjugation of an aldehyde to a modified silicon or silicon oxide surface has been monitored and characterized using X-ray photoelectron spectroscopy and IR spectroscopy. NHC catalysis was found to be efficient in water mediating full conversion of the aldehyde functionalized silicon oxide surfaces at the interface.

APA, Harvard, Vancouver, ISO, and other styles

15

Salhi, Billel, Bruno Grandidier, and Rabah Boukherroub. "Controlled growth of silicon nanowires on silicon surfaces." Journal of Electroceramics 16, no. 1 (February 2006): 15–21. http://dx.doi.org/10.1007/s10832-006-2496-z.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Senftleben, Oliver, Hermann Baumgärtner, and Ignaz Eisele. "Cleaning of Silicon Surfaces for Nanotechnology." Materials Science Forum 573-574 (March 2008): 77–117. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.77.

Full text

Abstract:

An overview of various cleaning procedures for silicon surfaces is presented. Because in-situ cleaning becomes more and more important for nanotechnology the paper concentrates on physical and dry chemical techniques. As standard ex-situ wet chemical cleaning has a significant impact on surface quality und thus device properties, its influence on further processes is also considered. Oxygen and carbon are unavoidable contaminations after wet chemical treatment and therefore we discuss their in-situ removal as one of the main goals of modern silicon substrate cleaning. As surface roughness strongly influences the electrical quality of interfaces for epitaxy and dielectric growth, we concentrate on techniques, which meet this requirement. It will be shown that multi-step thermal sequences in combination with simultaneous passivation of the clean surface are necessary in order to avoid recontamination. This can be achieved not only for ultra hich vacuum but also for inert gas atmosphere. In this case the process gases have to be extremely purified and the residual partial pressure of contaminats such as oxygen and carbon has to be negligible. It will be demonstrated that 800°C is an upper limit for thermal treatment of silicon surfaces in the presence of carbon because at this temperature SiC formation in combination with a high mobility of silicon monomers leads to surface roughness. In addition mechanical stress causes dislocations and crystal defects.

APA, Harvard, Vancouver, ISO, and other styles

17

Berezhanskyi, Ye I., S. I. Nichkalo, V. Yu Yerokhov, and A. A. Druzhynin. "Nanotexturing of Silicon by Metal-Assisted Chemical Etching." Фізика і хімія твердого тіла 16, no. 1 (March 15, 2015): 140–44. http://dx.doi.org/10.15330/pcss.16.1.140-144.

Full text

Abstract:

This paper describes the method of metal assisted chemical etching (MacEtch) as an efficient approach for structuring the silicon surface with the ability to manage effectively the geometric parameters of the structures and their distribution on the surface of substrate. The surface texturing technology was presented and the structured silicon surfaces with regular and irregular types of surfaces have been obtained. This technology can be used for nanotexturing of the surface of silicon photovoltaic converters. The model of photovoltaic converter based on the crater-textured silicon surface with high efficiency was presented.

APA, Harvard, Vancouver, ISO, and other styles

18

Кукушкин, С. А., И. П. Калинкин, and А. В. Осипов. "Влияние химической подготовки поверхности кремния на качество и структуру эпитаксиальных пленок карбида кремния, синтезированных методом замещения атомов." Физика и техника полупроводников 52, no. 6 (2018): 656. http://dx.doi.org/10.21883/ftp.2018.06.45932.8758.

Full text

Abstract:

AbstractThe fundamentals of a new technique for the cleaning and passivation of (111), (110), and (100) silicon wafer surfaces by hydride groups, which ensure a high surface purity and smoothness at the nanoscale upon long-term storage of the wafers at room temperature in air, are discussed. A new composition of the passivation solution for the long-term antioxidation protection of silicon surfaces is developed. The proposed solution is suitable for the long-term storage and repeated passivation of silicon wafers. The composition of the passivation solution and the conditions of passivation of the silicon wafers in it are described. Silicon wafers treated using the proposed technique can be used for growing epitaxial semiconductor films and different nanostructures. It is shown that only silicon surfaces prepared in this way allow SiC epitaxial films on silicon to be grown by atom substitution. The experimental dependences of the SiC and GaN film structures grown on silicon on the silicon-surface etching conditions are presented. The developed technique for silicon cleaning and passivation can both be used under laboratory conditions and easily adapted for the industrial production of silicon wafers with an oxidation-resistant surface coating.

APA, Harvard, Vancouver, ISO, and other styles

19

Chhatre, Shreerang S., Jesus O. Guardado, Brian M. Moore, Timothy S. Haddad, Joseph M. Mabry, Gareth H. McKinley, and Robert E. Cohen. "Fluoroalkylated Silicon-Containing Surfaces−Estimation of Solid-Surface Energy." ACS Applied Materials & Interfaces 2, no. 12 (November 10, 2010): 3544–54. http://dx.doi.org/10.1021/am100729j.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Förster, A. "Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 4 (July 1989): 720. http://dx.doi.org/10.1116/1.584632.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Milovzorov, D. "Electronic Structure of Nanocrystalline Silicon and Oxidized Silicon Surfaces." Electrochemical and Solid-State Letters 4, no. 7 (2001): G61. http://dx.doi.org/10.1149/1.1373378.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

McIntosh, Keith R., and Luke P. Johnson. "Recombination at textured silicon surfaces passivated with silicon dioxide." Journal of Applied Physics 105, no. 12 (June 15, 2009): 124520. http://dx.doi.org/10.1063/1.3153979.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Reddy, A. J., J. V. Chan, T. A. Burr, R. Mo, C. P. Wade, C. E. D. Chidsey, J. Michel, and L. C. Kimerling. "Defect states at silicon surfaces." Physica B: Condensed Matter 273-274 (December 1999): 468–72. http://dx.doi.org/10.1016/s0921-4526(99)00527-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

JACOBY, MITCH. "ORGANIC CHEMISTRY ON SILICON SURFACES." Chemical & Engineering News Archive 81, no. 48 (December 2003): 34–35. http://dx.doi.org/10.1021/cen-v081n048.p034.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Upward, M. D., P. Moriarty, P. H. Beton, P. R. Birkett, H. W. Kroto, D. R. M. Walton, and R. Taylor. "Functionalized fullerenes on silicon surfaces." Surface Science 405, no. 2-3 (May 1998): L526—L531. http://dx.doi.org/10.1016/s0039-6028(98)00144-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Dürr, M., and U. Höfer. "Hydrogen diffusion on silicon surfaces." Progress in Surface Science 88, no. 1 (February 2013): 61–101. http://dx.doi.org/10.1016/j.progsurf.2013.01.001.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

FREEMANTLE, MICHAEL. "ACID CHLORIDES ON SILICON SURFACES." Chemical & Engineering News 83, no. 12 (March 21, 2005): 10. http://dx.doi.org/10.1021/cen-v083n012.p010a.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Latyshev, A. V., and A. L. Aseev. "Monatomic steps on silicon surfaces." Physics-Uspekhi 41, no. 10 (October 31, 1998): 1015–23. http://dx.doi.org/10.1070/pu1998v041n10abeh000462.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Ma, D. D. D. "Small-Diameter Silicon Nanowire Surfaces." Science 299, no. 5614 (February 20, 2003): 1874–77. http://dx.doi.org/10.1126/science.1080313.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Wilson, Lynn O., and R. B. Marcus. "Oxidation of Curved Silicon Surfaces." Journal of The Electrochemical Society 134, no. 2 (February 1, 1987): 481–90. http://dx.doi.org/10.1149/1.2100485.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Cao, Peigen, Ke Xu, and James R. Heath. "Azidation of Silicon(111) Surfaces." Journal of the American Chemical Society 130, no. 45 (November 12, 2008): 14910–11. http://dx.doi.org/10.1021/ja804448p.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Zabotnov, S. V., L. A. Golovan’, I. A. Ostapenko, Yu V. Ryabchikov, A. V. Chervyakov, V. Yu Timoshenko, P. K. Kashkarov, and V. V. Yakovlev. "Femtosecond nanostructuring of silicon surfaces." JETP Letters 83, no. 2 (March 2006): 69–71. http://dx.doi.org/10.1134/s0021364006020056.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Bartelt, N. C., E. D. Williams, R. J. Phaneuf, Y. Yang, and S. Das Sarma. "Orientational stability of silicon surfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7, no. 3 (May 1989): 1898–905. http://dx.doi.org/10.1116/1.576025.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Latyshev, A. V., and A. L. Aseev. "Monatomic steps on silicon surfaces." Uspekhi Fizicheskih Nauk 168, no. 10 (1998): 1117. http://dx.doi.org/10.3367/ufnr.0168.199810c.1117.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Mele, E. J. "Phonons on reconstructed silicon surfaces." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 4 (July 1985): 1068. http://dx.doi.org/10.1116/1.583052.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Aspnes, D. E. "Steps on (001) silicon surfaces." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 4 (July 1987): 939. http://dx.doi.org/10.1116/1.583694.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Rivillon, S., and Y. J. Chabal. "Alkylation of Silicon(111) surfaces." Journal de Physique IV (Proceedings) 132 (March 2006): 195–98. http://dx.doi.org/10.1051/jp4:2006132037.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Cerofolini, G. F., and L. Meda. "Chemistry at silicon crystalline surfaces." Applied Surface Science 89, no. 4 (August 1995): 351–60. http://dx.doi.org/10.1016/0169-4332(95)00050-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Ревегук, А. А., А. Е. Петухов, А. А. Вишнякова, А. В. Королева, Д. А. Пудиков, and Е. В. Жижин. "Формирование упорядоченных кремниевых структур на поверхности графита." Физика твердого тела 61, no. 8 (2019): 1532. http://dx.doi.org/10.21883/ftt.2019.08.47984.443.

Full text

Abstract:

The work investigated the formation possibility of ordered silicon structures, including silicene, on the graphite substrates surface. The various conditions influence on the silicon atoms deposition on the final structure was also studied. Surface morphology information was obtained by atomic force microscopy, and the electronic structure was measured by Auger electron spectroscopy.

APA, Harvard, Vancouver, ISO, and other styles

40

Alves, Wendel A., Pablo A. Fiorito, Gerard Froyer, Fady El Haber, Luc Vellutini, Roberto M. Torresi, and Susana I. Córdoba de Torresi. "Immobilization of Catalysts of Biological Interest on Porous Oxidized Silicon Surfaces." Journal of Nanoscience and Nanotechnology 8, no. 7 (July 1, 2008): 3570–76. http://dx.doi.org/10.1166/jnn.2008.143.

Full text

Abstract:

The present paper deals with the immobilization of redox mediators and proteins onto protected porous silicon surfaces to obtain their direct electrochemical reactions and to retain their bioactivities. This paper shows that MP-11 and viologens are able to establish chemical bonds with 3-aminopropyltriethoxylsilane-modified porous silicon surface. The functionalization of the surfaces have been fully characterized by energy dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS) to examine the immobilization of these mediators onto the solid surface. Amperometric and open circuit potential measurements have shown the direct electron transfer between glucose oxidase and the electrode in the presence of the viologen mediator covalently linked to the 3-aminopropyltriethoxylsilane (APTES)-modified porous silicon surfaces.

APA, Harvard, Vancouver, ISO, and other styles

41

Zhuo, Xiao, and Hyeon Beom. "Effect of Side Surface Orientation on the Mechanical Properties of Silicon Nanowires: A Molecular Dynamics Study." Crystals 9, no. 2 (February 18, 2019): 102. http://dx.doi.org/10.3390/cryst9020102.

Full text

Abstract:

We investigated the mechanical properties of <100>-oriented square cross-sectional silicon nanowires under tension and compression, with a focus on the effect of side surface orientation. Two types of silicon nanowires (i.e., nanowires with four {100} side surfaces and those with four {110} side surfaces) were simulated by molecular dynamics simulations at a temperature of 300 K. The deformation mechanism exhibited no dependence on the side surface orientation, while the tensile strength and compressive strength did. Brittle cleavage was observed under tension, whereas dislocation nucleation was witnessed under compression. Silicon nanowires with {100} side surfaces had a lower tensile strength but higher compressive strength. The effect of side surface orientation became stronger as the nanowire width decreased. The obtained results may provide some insight into the design of silicon-based nano-devices.

APA, Harvard, Vancouver, ISO, and other styles

42

Latyshev, AV, and K. Yagi. "In Situ REM Observation of Step Dynamics on Silicon Surfaces." Microscopy and Microanalysis 3, S2 (August 1997): 581–82. http://dx.doi.org/10.1017/s143192760000979x.

Full text

Abstract:

Clear understanding of the structural and morphological transformations on the crystal surfaces can only be extracted from considerations of the dynamical properties of surface evolution. So ultra high vacuum reflection electron microscopy (UHV REM) has been applied to in situ studies of step behaviors on the silicon surfaces during various treatments. Dependence of the surface morphology on the number of parameters is reviewed with new results. Special attention is paid to influence of the electromigration phenomena and strain fields on structural evolution of the surfaces during sublimation, phase transition and epitaxial growth. The stability of the atomic step distributions is discussed in the frame of kinetical morphological transitions on silicon surfaces during DC heating of studied crystal [1].The step motion during sublimation shows a strong influence of stress fields on the step configurations [2]. The importance of surface stress is obvious because in equilibrium conditions there is a residual stress on the surface due to existence of broken bonds.

APA, Harvard, Vancouver, ISO, and other styles

43

Grant, Nicholas E., Alex I. Pointon, Richard Jefferies, Daniel Hiller, Yisong Han, Richard Beanland, Marc Walker, and John D. Murphy. "Atomic level termination for passivation and functionalisation of silicon surfaces." Nanoscale 12, no. 33 (2020): 17332–41. http://dx.doi.org/10.1039/d0nr03860a.

Full text

Abstract:

The termination of silicon surfaces is studied from the nanometre to the centimetre scale, with differences in behaviour between hydrogen and fluorine terminated surfaces persisting after some subsequent surface passivation treatments.

APA, Harvard, Vancouver, ISO, and other styles

44

Lu, Gang, Guilin Wang, and Hai Li. "Effect of nanostructured silicon on surface enhanced Raman scattering." RSC Advances 8, no. 12 (2018): 6629–33. http://dx.doi.org/10.1039/c8ra00014j.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Kondo, Naoki, Hideki Hyuga, Katsumi Yoshida, and Hideki Kita. "Fabrication and Wettability Test of Silicon Nitrides with Ordered Protrusions." Solid State Phenomena 127 (September 2007): 173–78. http://dx.doi.org/10.4028/www.scientific.net/ssp.127.173.

Full text

Abstract:

Silicon nitrides are often used as ladles, stalks, heater element protection tubes, etc., in the metal casting industry. A low wettability for molten metals is required for these purposes since wetting by molten metals leads to adhesion of solidified metals, which causes several problems. Surface structure is known to affect wettability. Thus, the present study attempts to fabricate silicon nitrides with controlled surface structures. Silicon nitrides, whose surfaces were covered with ordered hemispherical protrusions, were fabricated by the slip-casting technique. The cast bodies were sintered, and subjected to wettability tests using molten metals. For comparison, silicon nitrides with as-sintered and polished surfaces were also prepared. The surface with protrusions exhibited a lower contact angle compared to the as-sintered and polished surfaces. The contact angle depended on the diameter of the hemisphere; it was the largest at a diameter of 0.3 mm.

APA, Harvard, Vancouver, ISO, and other styles

46

Ichimiya, Ayahiko, Yoriko Tanaka, and Kazuhiko Hayashi. "Thermal relaxation of silicon islands and craters on silicon surfaces." Surface Science 386, no. 1-3 (October 1997): 182–94. http://dx.doi.org/10.1016/s0039-6028(97)00309-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Islam, M. Saif, S. Sharma, T. I. Kamins, and R. Stanley Williams. "Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces." Nanotechnology 15, no. 5 (January 23, 2004): L5—L8. http://dx.doi.org/10.1088/0957-4484/15/5/l01.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Kolasinski, Kurt W. "The Mechanism of Photohydrosilylation on Silicon and Porous Silicon Surfaces." Journal of the American Chemical Society 135, no. 30 (July 19, 2013): 11408–12. http://dx.doi.org/10.1021/ja406063n.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Chen, W., X. N. Xie, H. Xu, A. T. S. Wee, and Kian Ping Loh. "Atomic Scale Oxidation of Silicon Nanoclusters on Silicon Carbide Surfaces." Journal of Physical Chemistry B 107, no. 42 (October 2003): 11597–603. http://dx.doi.org/10.1021/jp035029e.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Alfonso, Dominic R. "Characterization of silicon-silicon bonds on the Si(100) surfaces." Applied Physics Letters 75, no. 16 (October 18, 1999): 2404–6. http://dx.doi.org/10.1063/1.125028.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'Silicon Surfaces'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles