Relevant bibliographies by topics / Silicon-vacancy centre in diamond

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Silicon-vacancy centre in diamond'

Author: Grafiati
Published: 11 December 2022
Last updated: 25 January 2023

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Journal articles on the topic "Silicon-vacancy centre in diamond"

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Jahnke, Kay D., Alp Sipahigil, Jan M. Binder, Marcus W. Doherty, Mathias Metsch, Lachlan J. Rogers, Neil B. Manson, Mikhail D. Lukin, and Fedor Jelezko. "Electron–phonon processes of the silicon-vacancy centre in diamond." New Journal of Physics 17, no. 4 (April 8, 2015): 043011. http://dx.doi.org/10.1088/1367-2630/17/4/043011.

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Capelli, Marco, Lukas Lindner, Tingpeng Luo, Jan Jeske, Hiroshi Abe, Shinobu Onoda, Takeshi Ohshima, et al. "Proximal nitrogen reduces the fluorescence quantum yield of nitrogen-vacancy centres in diamond." New Journal of Physics 24, no. 3 (March 1, 2022): 033053. http://dx.doi.org/10.1088/1367-2630/ac5ca9.

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Abstract The nitrogen-vacancy colour centre in diamond is emerging as one of the most important solid-state quantum systems. It has applications to fields including high-precision sensing, quantum computing, single photon communication, metrology, nanoscale magnetic imaging and biosensing. For all of these applications, a high quantum yield of emitted photons is desirable. However, diamond samples engineered to have high densities of nitrogen-vacancy centres show levels of brightness varying significantly within single batches, or even within the same sample. Here we show that nearby nitrogen impurities quench emission of nitrogen-vacancy centres via non-radiative transitions, resulting in a reduced fluorescence quantum yield. We monitored the emission properties of nitrogen-vacancy centre ensembles from synthetic diamond samples with different concentrations of nitrogen impurities. All samples were irradiated with high energy electrons to create high densities of nitrogen-vacancy centres relative to the concentration of nitrogen impurities. While at low nitrogen densities of 1.81 ppm we measured a lifetime of 13.9 ns, we observed a strong reduction in lifetime with increasing nitrogen density. We measure a lifetime as low as 4.4 ns at a nitrogen density of 380 ppm. The change in lifetime matches a reduction in relative fluorescence quantum yield from 77.4% to 32% with an increase in nitrogen density from 88 ppm to 380 ppm, respectively. These results will inform the conditions required to optimise the properties of diamond crystals devices based on the fluorescence of nitrogen-vacancy centres. Furthermore, this work provides insights into the origin of inhomogeneities observed in high-density nitrogen-vacancy ensembles within diamonds and nanodiamonds.
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Dragounová, Kateřina, Tibor Ižák, Alexander Kromka, Zdeněk Potůček, Zdeněk Bryknar, and Štěpán Potocký. "Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films." Journal of Electrical Engineering 68, no. 7 (December 1, 2017): 3–9. http://dx.doi.org/10.1515/jee-2017-0048.

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AbstractNanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3, Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈3.5 cm−1) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.
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Doherty, Marcus W., Neil B. Manson, Paul Delaney, Fedor Jelezko, Jörg Wrachtrup, and Lloyd C. L. Hollenberg. "The nitrogen-vacancy colour centre in diamond." Physics Reports 528, no. 1 (July 2013): 1–45. http://dx.doi.org/10.1016/j.physrep.2013.02.001.

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Khramtsov, Igor A., and Dmitry Yu Fedyanin. "Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures." Nanomaterials 10, no. 2 (February 19, 2020): 361. http://dx.doi.org/10.3390/nano10020361.

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Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive single-photon emitters for room temperature applications. However, diamond is a material at the interface between insulators and semiconductors. Therefore, it is extremely difficult to excite color centers electrically and consequently develop bright and efficient electrically driven single-photon sources. Here, using a comprehensive theoretical approach, we propose and numerically demonstrate a concept of a single-photon emitting diode (SPED) based on a SiV center in a nanoscale AlN/diamond heterojunction device. We find that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i-type diamond region. The maximum SPEL rate is more than five times higher than what can be achieved in SPEDs based on diamond p-i-n diodes. Despite the high density of defects at the AlN/diamond interface, the SPEL rate can reach about 4 Mcps, which coincides with the limit imposed by the quantum efficiency and the lifetime of the shelving state of the SiV center. These findings provide new insights into the development of bright room-temperature electrically driven single-photon sources for quantum information technologies and, we believe, stimulate further research in this area.
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Sledz, Florian, Assegid M. Flatae, Stefano Lagomarsino, Savino Piccolomo, Shannon S. Nicley, Ken Haenen, Robert Rechenberg, et al. "Light emission from color centers in phosphorus-doped diamond." EPJ Web of Conferences 266 (2022): 09008. http://dx.doi.org/10.1051/epjconf/202226609008.

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Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.
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Baranov, P. G., Victor A. Soltamov, Alexandra A. Soltamova, Georgy V. Astakhov, and Vladimir D. Dyakonov. "Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States." Materials Science Forum 740-742 (January 2013): 425–30. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.425.

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The unique quantum properties of the nitrogen–vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. As an example, results of experiments on electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) are presented suggests that silicon vacancy (VSi) related point defects in SiC possess properties the similar to those of the NV center in diamond, which in turn make them a promising quantum system for single-defect and single-photon spectroscopy in the infrared region. Depending on the defect type, temperature, SiC polytype, and crystalline position, two opposite schemes have been observed for the optical alignment of the high-spin ground state spin sublevels population of the VSi-related defects upon irradiation with unpolorized light. Spin ensemble of VSi-related defects are shown to be prepared in a coherent superposition of the spin states even at room temperature. Zero-field (ZF) ODMR shows the possibility to manipulate of the ground state spin population by applying radiofrequency field. These altogether make VSi-related defects in SiC very favorable candidate for spintronics, quantum information processing, and magnetometry.
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Pushkarchuk, A. L., S. A. Kuten, V. A. Pushkarchuk, A. P. Nizovtsev, and S. Ya Kilin. "Neutral Silicon-Vacancy Color Center in Diamond: Cluster Simulation of Spatial and Hyperfine Characteristics." International Journal of Nanoscience 18, no. 03n04 (March 26, 2019): 1940010. http://dx.doi.org/10.1142/s0219581x19400106.

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One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in solids in which electrons can play a role of “fast” qubits, while nuclear spins can store quantum information for a very long time due to their exceptionally high isolation from the environment. The well-known representative of such systems is the “nitrogen-vacancy” (NV) center in diamond coupled by a hyperfine interaction to its intrinsic [Formula: see text]N/[Formula: see text]N nuclear spin or to [Formula: see text]C nuclear spins presenting in the diamond lattice. More recently, other paramagnetic color centers in diamond have been identified exhibiting even better characteristics in comparison to the NV center. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for one of the new color centers in diamond, viz., neutral “silicon-vacancy” (SiV0) color center, is a primary goal of this paper, in which we are presenting preliminary results of computer simulation of spatial and hyperfine characteristics of SiV0 center in H-terminated clusters C[Formula: see text][SiV0]H[Formula: see text] and C[Formula: see text][SiV0]H[Formula: see text].
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Orzechowska, Zuzanna, Mariusz Mrózek, Wojciech Gawlik, and Adam Wojciechowski. "Preparation and characterization of AFM tips with nitrogen-vacancy and nitrogen-vacancy-nitrogen color centers." Photonics Letters of Poland 13, no. 2 (June 30, 2021): 28. http://dx.doi.org/10.4302/plp.v13i2.1095.

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We demonstrate a simple dip-coating method of covering standard AFM tips with nanodiamonds containing color centers. Such coating enables convenient visualization of AFM tips above transparent samples as well as using the tip for performing spatially resolved magnetometry. Full Text: PDF ReferencesG. Binnig, C. F. Quate, C. Gerber, "Atomic Force Microscope", Phys. Rev. Lett. 56, 930 (1986). CrossRef F .J. Giessibl, "Advances in atomic force microscopy", Rev. Mod. Phys. 75, 949 (2003). CrossRef S. Kasas, G. Dietler, "Probing nanomechanical properties from biomolecules to living cells", Eur. J. Appl. Physiol. 456, 13 (2008). CrossRef C. Roduit et al., "Stiffness Tomography by Atomic Force Microscopy", Biophys. J. 97, 674 (2009). CrossRef L. A. Kolodny et al., "Spatially Correlated Fluorescence/AFM of Individual Nanosized Particles and Biomolecules", Anal. Chem. 73, 1959 (2001). CrossRef L. Rondin et al., "Magnetometry with nitrogen-vacancy defects in diamond", Rep. Prog. Phys. 77, 056503 (2014). CrossRef C. L. Degen, "Scanning magnetic field microscope with a diamond single-spin sensor", Appl. Phys. Lett. 92, 243111 (2008). CrossRef J. M. Taylor et al., "High-sensitivity diamond magnetometer with nanoscale resolution", Nat. Phys. 4, 810 (2008). CrossRef J. R. Maze et al., "Nanoscale magnetic sensing with an individual electronic spin in diamond", Nature 455, 644 (2008). CrossRef L. Rondin et al., "Nanoscale magnetic field mapping with a single spin scanning probe magnetometer", Appl. Phys. Lett. 100, 153118 (2012). CrossRef J. P. Tetienne et al., "Nanoscale imaging and control of domain-wall hopping with a nitrogen-vacancy center microscope", Science 344, 1366 (2014). CrossRef R. Nelz et al., "Color center fluorescence and spin manipulation in single crystal, pyramidal diamond tips", Appl. Phys. Lett. 109, 193105 (2016). CrossRef G. Balasubramanian et al., "Nanoscale imaging magnetometry with diamond spins under ambient conditions", Nature 455, 648 (2008). CrossRef P. Maletinsky et al., "A robust scanning diamond sensor for nanoscale imaging with single nitrogen-vacancy centres", Nat. nanotechnol. 7, 320 (2012). CrossRef L. Thiel et al., "Quantitative nanoscale vortex imaging using a cryogenic quantum magnetometer", Nat. nanotechnol. 11, 677 (2016). CrossRef F. Jelezko et al., "Single spin states in a defect center resolved by optical spectroscopy", Appl. Phys. Lett. 81, 2160 (2002). CrossRef M. W. Doherty et al., "The nitrogen-vacancy colour centre in diamond", Phys. Rep. 528, 1 (2013). CrossRef C. Kurtsiefer, S. Mayer, P. Zarda, H. Weinfurter, "Stable Solid-State Source of Single Photons", Phys. Rev. Lett. 85, 290 (2000). CrossRef A. Gruber, A. Dräbenstedt, C. Tietz, L. Fleury, J. Wrachtrup, C. Von Borczyskowski, "Scanning Confocal Optical Microscopy and Magnetic Resonance on Single Defect Centers", Science 276, 2012 (1997). CrossRef F. Dolde et al., "Electric-field sensing using single diamond spins", Nat. Phys. 7, 459 (2011). CrossRef K. Sasaki et al., "Broadband, large-area microwave antenna for optically detected magnetic resonance of nitrogen-vacancy centers in diamond", Rev. Sci. Instrum. 87, 053904 (2016). CrossRef A. M. Wojciechowski et al., "Optical Magnetometry Based on Nanodiamonds with Nitrogen-Vacancy Color Centers", Materials 12, 2951 (2019). CrossRef I. V. Fedotov et al., "Fiber-optic magnetometry with randomly oriented spins", Opt. Lett. 39, 6755 (2014). CrossRef
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Wambold, Raymond A., Zhaoning Yu, Yuzhe Xiao, Benjamin Bachman, Gabriel Jaffe, Shimon Kolkowitz, Jennifer T. Choy, Mark A. Eriksson, Robert J. Hamers, and Mikhail A. Kats. "Adjoint-optimized nanoscale light extractor for nitrogen-vacancy centers in diamond." Nanophotonics 10, no. 1 (November 16, 2020): 393–401. http://dx.doi.org/10.1515/nanoph-2020-0387.

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AbstractWe designed a nanoscale light extractor (NLE) for the efficient outcoupling and beaming of broadband light emitted by shallow, negatively charged nitrogen-vacancy (NV) centers in bulk diamond. The NLE consists of a patterned silicon layer on diamond and requires no etching of the diamond surface. Our design process is based on adjoint optimization using broadband time-domain simulations and yields structures that are inherently robust to positioning and fabrication errors. Our NLE functions like a transmission antenna for the NV center, enhancing the optical power extracted from an NV center positioned 10 nm below the diamond surface by a factor of more than 35, and beaming the light into a ±30° cone in the far field. This approach to light extraction can be readily adapted to other solid-state color centers.
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Dissertations / Theses on the topic "Silicon-vacancy centre in diamond"

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Pingault, Benjamin Jean-Pierre. "The silicon-vacancy centre in diamond for quantum information processing." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/269366.

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Atomic defects in solids offer access to atom-like quantum properties without complex trapping methods while displaying a rich physics due to interactions with their solid-state environment. Such properties have made them an advantageous building block for quantum information processing, in particular to construct a quantum network, where information would be encoded in spins and transferred between nodes through photons. Among defects in solids, the negatively charged silicon-vacancy centre in diamond (SiV$^{−}$) has attracted attention for its very promising optical properties for such a network. In this thesis, we investigate the spin properties of the silicon-vacancy centre as a potential spin-photon interface. First, we use resonant excitation of an SiV$^{−}$ centre in an external magnetic field to selectively address different electronic states and analyse the resulting fluorescence. We find evidence of selection rules in the optical transitions revealing that the centre possesses an electronic spin S = 1/2. Making use of the dependence of such selection rules on the applied magnetic field orientation, we resonantly drive two optical transitions forming a $\Lambda$-scheme. In the double resonance condition, we achieve coherent population trapping, whereby the SiV$^{−}$ is pumped into a dark state corresponding to a superposition of the two addressed ground states of opposite spin. This technique allows us to evaluate the coherence time of the dark state and hence of the spin, while demonstrating the possibility of all-optical control of the spin when a $\Lambda$-scheme is available. We then use resonant optical pulses to initialise and read out the spin state of a single SiV$^{−}$. By tuning a microwave pulse into resonance between two ground states of opposite spin, we demonstrate optically detected magnetic resonance. Subsequently, by varying the duration of a resonant microwave pulse, we achieve coherent control of a single SiV$^{−}$ electronic spin. Through Ramsey interferometry, we measure a spin dephasing time of 115 $\pm$ 9 ns. We then investigate interactions of the SiV$^{−}$ with its environment. We analyse the hyperfine interaction of the SiV$^{−}$ spin with the nuclear spin of $^{29}$Si, with a view to taking advantage of the long-lived nuclear spin in the future. We show that single-phonon-mediated excitations between electronic states of the SiV$^{−}$ are the dominant spin dephasing and population decay mechanism and evaluate how external strain alters optical selection rules and can be used to improve the coherence time of the spin.
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Jahnke, Kay Daniel [Verfasser]. "Low temperature spectroscopy of single colour centres in diamond - The silicon-vacancy centre in diamond / Kay Daniel Jahnke." Ulm : Universität Ulm. Fakultät für Naturwissenschaften, 2015. http://d-nb.info/1074196023/34.

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Grazios, Fabio. "Fluorescence properties of single nitrogen-vacancy centre in diamond." Thesis, University of Oxford, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.543481.

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Müller, Tina. "Novel colour centres in diamond : silicon-vacancy and chromium centres as candidates for quantum information applications." Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608164.

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Hepp, Christian [Verfasser], and Christoph [Akademischer Betreuer] Becher. "Electronic structure of the silicon vacancy color center in diamond / Christian Hepp. Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2014. http://d-nb.info/1064305822/34.

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Becker, Jonas Nils [Verfasser], and Christoph [Akademischer Betreuer] Becher. "Silicon vacancy colour centres in diamond : coherence properties & quantum control / Jonas Nils Becker ; Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2017. http://d-nb.info/1152095226/34.

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Becker, Jonas Nils Verfasser], and Christoph [Akademischer Betreuer] [Becher. "Silicon vacancy colour centres in diamond : coherence properties & quantum control / Jonas Nils Becker ; Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:291-scidok-ds-269890.

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Hubbard, Richard Ian. "Solid-state single-photon sources : quantum dots and the nitrogen-vacancy centre in diamond." Thesis, Imperial College London, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501140.

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Benedikter, Julia [Verfasser], and Theodor W. [Akademischer Betreuer] Hänsch. "Microcavity enhancement of silicon vacancy centres in diamond and europium ions in yttria / Julia Benedikter ; Betreuer: Theodor W. Hänsch." München : Universitätsbibliothek der Ludwig-Maximilians-Universität, 2019. http://d-nb.info/1238518524/34.

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Abbasi, Zargaleh Soroush. "Spectroscopie d'excitation de la photoluminescence à basse température et resonance magnétique détectée optiquement de défauts paramagnétiques de spin S=l carbure de silicium ayant une photoluminescence dans le proche infrarouge." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLN044.

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Les défauts ponctuels dans les matériaux à grande bande interdite font l’objet de nombreuses recherches, compte tenu des perspectives d’applications en technologie quantique. La réalisation de qubits et de capteurs quantiques a échelle nanomètres à l’aide du centre NV– a suscité la recherche de défauts ayant des propriétés magnéto-optiques similaires, mais dans un matériau technologiquement plus mûr tel que le carbure de silicium (SiC). Le SiC se présente sous différentes structures cristallographiques, notamment cubique (3C) et hexagonales (4H et 6H). Cette propriété permet d’obtenir une plus grande variété de défauts ponctuels profonds. Dans cette thèse, j'ai établi présence du défaut azote-lacune (NCVSi) de spin S=1 dans un échantillon de 4H-SiC irradié par des protons, en réalisant la spectroscopie d'excitation de la photoluminescence à la température cryogénique et en comparant les résultats à des calculs ab initio. J'ai également développé un dispositif qui m'a permis de détecter optiquement la résonance magnétique de spin S=1 (ODMR) de la bilacune (VCVSi) dans un échantillon de 3C-SiC et d'étudier son interaction hyperfine avec des spins nucléaires d’atome de carbone et de silicium voisins
Point-like defects in wide-bandgap materials are attracting intensive research attention owing to prospective applications in quantum technologies. Inspired by the achievements obtained with the NV– center in diamond for which qubit and nanoscale quantum sensors have been demonstrated, the search for high spin color centers with similar magneto-optical properties in a more technological mature material such as silicon carbide (SiC) had a renewed interest. Indeed, SiC exhibits polymorphism, existing for instance with cubic (3C polytype) or hexagonal (4H and 6H polytypes) crystalline structures. Such property provides a degree of freedom for engineering a rich assortment of intrinsic and extrinsic atomic-like deep defects. In this thesis using photoluminescence excitation spectroscopy at cryogenic temperature and a comparison to ab initio calculations I have evidence the presence of nitrogen-vacancy spin S=1 (NCVSi) defect in proton irradiated 4H-SiC. I have also developed a setup that allowed me to detect optically the S=1 spin magnetic resonance (ODMR) of the divacancy (VCVSi) in 3C-SiC, and study its hyperfine interaction with nearby carbon and silicon nuclear spins
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Books on the topic "Silicon-vacancy centre in diamond"

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Chu, Yiwen, and Mikhail D. Lukin. Quantum optics with nitrogen-vacancy centres in diamond. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198768609.003.0005.

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A common theme in the implementation of quantum technologies involves addressing the seemingly contradictory needs for controllability and isolation from external effects. Undesirable effects of the environment must be minimized, while at the same time techniques and tools must be developed that enable interaction with the system in a controllable and well-defined manner. This chapter addresses several aspects of this theme with regard to a particularly promising candidate for developing applications in both metrology and quantum information, namely the nitrogen-vacancy (NV) centre in diamond. The chapter describes how the quantum states of NV centres can be manipulated, probed, and efficiently coupled with optical photons. It also discusses ways of tackling the challenges of controlling the optical properties of these emitters inside a complex solid state environment.
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Book chapters on the topic "Silicon-vacancy centre in diamond"

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Bradac, Carlo, Torsten Gaebel, and James R. Rabeau. "Nitrogen-Vacancy Color Centers in Diamond: Properties, Synthesis, and Applications." In Optical Engineering of Diamond, 143–75. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527648603.ch5.

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Jensen, Kasper, Pauli Kehayias, and Dmitry Budker. "Magnetometry with Nitrogen-Vacancy Centers in Diamond." In Smart Sensors, Measurement and Instrumentation, 553–76. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-34070-8_18.

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Mizuochi, Norikazu. "Quantum Information Processing Using Nitrogen-Vacancy Centres in Diamond." In Spintronics for Next Generation Innovative Devices, 227–36. Chichester, UK: John Wiley & Sons, Ltd, 2016. http://dx.doi.org/10.1002/9781118751886.ch12.

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Shi, Changkun, Huihui Luo, Zongwei Xu, and Fengzhou Fang. "Nitrogen-Vacancy Color Centers in Diamond Fabricated by Ultrafast Laser Nanomachining." In Springer Tracts in Mechanical Engineering, 277–305. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-3335-4_11.

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Becker, Jonas Nils, and Elke Neu. "The silicon vacancy center in diamond." In Diamond for Quantum Applications Part 1, 201–35. Elsevier, 2020. http://dx.doi.org/10.1016/bs.semsem.2020.04.001.

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Sipahigil, Alp, and Mikhail D. Lukin. "Quantum optics with diamond color centers coupled to nanophotonic devices." In Current Trends in Atomic Physics, 1–28. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780198837190.003.0001.

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Chapter 1 reviews recent advances towards the realization of quantum networks based on atom-like solid-state quantum emitters coupled to nanophotonic devices. Specifically, focus is on experiments involving the negatively charged silicon-vacancy color center in diamond. These emitters combine homogeneous, coherent optical transitions and a long-lived electronic spin quantum memory. Optical and spin properties of this system at cryogenic temperatures and experiments where silicon-vacancy centers are coupled to nanophotonic cavities are discussed. Finally, the chapter discusses experiments demonstrating quantum nonlinearities at the single-photon level and two-emitter entanglement in a single nanophotonic device.
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Ghosh, Arka. "Theoretical Analysis of a Microwave Antenna for Optically Detected Magnetic Resonance (ODMR) in NV Centre of Diamond." In Constraint Decision-Making Systems in Engineering, 58–77. IGI Global, 2023. http://dx.doi.org/10.4018/978-1-6684-7343-6.ch004.

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The nitrogen vacancy (NV) centre is one of the most popular stable point defect centres in diamond. It acts as a single photon source even at room temperature. In order to analyse the optically detected magnetic resonance (ODMR) with the help of NV colour centre in diamond, an external magnetic field is needed as well as a microwave (MW) antenna. In this chapter, the authors present a simulated model of a microwave antenna and propose further modifications in order to increase the intensity of the microwave field.
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Ma, Yaping, Junbo Chen, and Chenhui Wang. "Growth of Diamond Thin Film and Creation of NV Centers." In Applications and Use of Diamond [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.108159.

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Nitrogen-vacancy (NV) center is one type of special defects in diamonds. NV center not only can be used as sensors for temperature, stress detection, magnetic field, etc., but also has potential applications for quantum computing due to its unique physical properties. Therefore, the growth of diamond and creation of NV centers are significant for the future technologies. In this chapter, some methods for growing diamond thin film are introduced first, including traditional high-pressure-high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The second part will focus on the current commonly used approaches to create NV centers. Inter-growth and post-growth processes are mainly utilized for the creation of NV centers during and after the growth of thin film, respectively.
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Zheng, Huijie, Arne Wickenbrock, Georgios Chatzidrosos, Lykourgos Bougas, Nathan Leefer, Samer Afach, Andrey Jarmola, et al. "Novel Magnetic-Sensing Modalities with Nitrogen-Vacancy Centers in Diamond." In Engineering Applications of Diamond. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95267.

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In modern-day quantum metrology, quantum sensors are widely employed to detect weak magnetic fields or nanoscale signals. Quantum devices, exploiting quantum coherence, are inevitably connected to physical constants and can achieve accuracy, repeatability, and precision approaching fundamental limits. As a result, these sensors have shown utility in a wide range of research domains spanning both science and technology. A rapidly emerging quantum sensing platform employs atomic-scale defects in crystals. In particular, magnetometry using nitrogen-vacancy (NV) color centers in diamond has garnered increasing interest. NV systems possess a combination of remarkable properties, optical addressability, long coherence times, and biocompatibility. Sensors based on NV centers excel in spatial resolution and magnetic sensitivity. These diamond-based sensors promise comparable combination of high spatial resolution and magnetic sensitivity without cryogenic operation. The above properties of NV magnetometers promise increasingly integrated quantum measurement technology, as a result, they have been extensively developed with various protocols and find use in numerous applications spanning materials characterization, nuclear magnetic resonance (NMR), condensed matter physics, paleomagnetism, neuroscience and living systems biology, and industrial vector magnetometry. In this chapter, NV centers are explored for magnetic sensing in a number of contexts. In general, we introduce novel regimes for magnetic-field probes with NV ensembles. Specifically, NV centers are developed for sensitive magnetometers for applications where microwaves (MWs) are prohibitively invasive and operations need to be carried out under zero ambient magnetic field. The primary goal of our discussion is to improve the utility of these NV center-based magnetometers.
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Zvyagin, Andrei V., and Neil B. Manson. "Optical and Spin Properties of Nitrogen-Vacancy Color Centers in Diamond Crystals, Nanodiamonds, and Proximity to Surfaces." In Ultananocrystalline Diamond, 327–54. Elsevier, 2012. http://dx.doi.org/10.1016/b978-1-4377-3465-2.00010-4.

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Conference papers on the topic "Silicon-vacancy centre in diamond"

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Pingault, Benjamin, Tina Muller, Christian Hepp, Elke Neu, Christoph Becher, and Mete Atature. "Optical signatures of spin in silicon-vacancy centre in diamond." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/cleo_qels.2014.fw1b.1.

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Pingault, Benjamin, Tina Muller, Christian Hepp, Elke Neu, Christoph Becher, and Mete Atature. "Resonant optical access to spin of silicon-vacancy centre in diamond." In Quantum Information and Measurement. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/qim.2014.qth4a.4.

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Joy, R. Mary, T. Chakraborty, P. Pobedinskas, M. Nesládek, and K. Haenen. "Sharp Ge-vacancy colour centre emission from nanocrystalline CVD diamond films." In Diamond Photonics - Physics, Technologies and Applications. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/dp.2019.94.

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Chia, Cleaven, Srujan Meesala, Graham Joe, Michelle Chalupnik, Bartholomeus Machielse, Stefan Bogdanovic, and Marko Loncar. "Electron-phonon coupling between silicon vacancy centers and optomechanical crystals in diamond." In Diamond Photonics - Physics, Technologies and Applications. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/dp.2019.131.

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Hanks, M., W. J. Munro, and K. Nemoto. "Optical Control of the Silicon–Vacancy Center in Diamond." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.a-7-04.

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Huang, Ding, Alex Abulnaga, Sacha Welinski, Zi-Huai Zhang, Paul Stevenson, Brendon Rose, and Nathalie De Leon. "Nanophotonics for telecom quantum networks based on neutral silicon vacancy centers in diamond." In Diamond Photonics - Physics, Technologies and Applications. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/dp.2019.57.

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Metsch, M. H., K. Senkalla, B. Tratzmiller, J. Scheuer, M. Kern, J. Achard, A. Tallaire, M. B. Plenio, P. Siyushev, and F. Jelezko. "Initialization and Readout of Nuclear Spins via negatively charged Silicon-Vacancy Center in Diamond." In Diamond Photonics - Physics, Technologies and Applications. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/dp.2019.86.

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Bates, Kelsey M., Matthew W. Day, Christopher L. Smallwood, Ronald Ulbricht, Travis M. Autry, Rachel C. Owen, Geoffrey Diederich, et al. "Measuring the Diamond strain Tensor with Silicon-Vacancy Centers." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_qels.2020.ftu3d.4.

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Häußler, Stefan, Richard Waltrich, Gregor Bayer, and Alexander Kubanek. "Silicon-Vacancy Centers in a single crystal diamond membrane as efficient spin photon interface." In Diamond Photonics - Physics, Technologies and Applications. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/dp.2019.82.

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Joe, Graham, Cleaven Chia, Michelle Chalupnik, Benjamin Pingault, Srujan Meesala, Eliza Cornell, Daniel Assumpcao, Bartholomeus Machielse, and Marko Lončar. "Diamond Phononic Crystals with Silicon-Vacancy Centers at Cryogenic Temperatures." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_qels.2021.fth4m.1.

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Reports on the topic "Silicon-vacancy centre in diamond"

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Kehayias, Pauli. High-resolution magnetic microscopy applications using nitrogen-vacancy centers in diamond. Office of Scientific and Technical Information (OSTI), October 2021. http://dx.doi.org/10.2172/1826099.

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Connolly, Colin. High-Resolution, Ultra-Sensitive Magnetic Imaging Using an Ensemble of Nitrogen-Vacancy (NV) Centers in Diamond. Fort Belvoir, VA: Defense Technical Information Center, March 2013. http://dx.doi.org/10.21236/ada586711.

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Connolly, Colin. High-Resolution, Ultra-Sensitive Magnetic Imaging Using an Ensemble of Nitrogen-Vacancy (NV) Centers in Diamond. Fort Belvoir, VA: Defense Technical Information Center, July 2013. http://dx.doi.org/10.21236/ada587883.

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Connolly, Colin. High-Resolution, Ultra-Sensitive Magnetic Imaging Using an Ensemble of Nitrogen-Vacancy (NV) Centers in Diamond. Fort Belvoir, VA: Defense Technical Information Center, November 2013. http://dx.doi.org/10.21236/ada594771.

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