Dissertations / Theses on the topic 'Silicon-vacancy centre in diamond'
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Pingault, Benjamin Jean-Pierre. "The silicon-vacancy centre in diamond for quantum information processing." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/269366.
Full textJahnke, Kay Daniel [Verfasser]. "Low temperature spectroscopy of single colour centres in diamond - The silicon-vacancy centre in diamond / Kay Daniel Jahnke." Ulm : Universität Ulm. Fakultät für Naturwissenschaften, 2015. http://d-nb.info/1074196023/34.
Full textGrazios, Fabio. "Fluorescence properties of single nitrogen-vacancy centre in diamond." Thesis, University of Oxford, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.543481.
Full textMüller, Tina. "Novel colour centres in diamond : silicon-vacancy and chromium centres as candidates for quantum information applications." Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608164.
Full textHepp, Christian [Verfasser], and Christoph [Akademischer Betreuer] Becher. "Electronic structure of the silicon vacancy color center in diamond / Christian Hepp. Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2014. http://d-nb.info/1064305822/34.
Full textBecker, Jonas Nils [Verfasser], and Christoph [Akademischer Betreuer] Becher. "Silicon vacancy colour centres in diamond : coherence properties & quantum control / Jonas Nils Becker ; Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2017. http://d-nb.info/1152095226/34.
Full textBecker, Jonas Nils Verfasser], and Christoph [Akademischer Betreuer] [Becher. "Silicon vacancy colour centres in diamond : coherence properties & quantum control / Jonas Nils Becker ; Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:291-scidok-ds-269890.
Full textHubbard, Richard Ian. "Solid-state single-photon sources : quantum dots and the nitrogen-vacancy centre in diamond." Thesis, Imperial College London, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501140.
Full textBenedikter, Julia [Verfasser], and Theodor W. [Akademischer Betreuer] Hänsch. "Microcavity enhancement of silicon vacancy centres in diamond and europium ions in yttria / Julia Benedikter ; Betreuer: Theodor W. Hänsch." München : Universitätsbibliothek der Ludwig-Maximilians-Universität, 2019. http://d-nb.info/1238518524/34.
Full textAbbasi, Zargaleh Soroush. "Spectroscopie d'excitation de la photoluminescence à basse température et resonance magnétique détectée optiquement de défauts paramagnétiques de spin S=l carbure de silicium ayant une photoluminescence dans le proche infrarouge." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLN044.
Full textPoint-like defects in wide-bandgap materials are attracting intensive research attention owing to prospective applications in quantum technologies. Inspired by the achievements obtained with the NV– center in diamond for which qubit and nanoscale quantum sensors have been demonstrated, the search for high spin color centers with similar magneto-optical properties in a more technological mature material such as silicon carbide (SiC) had a renewed interest. Indeed, SiC exhibits polymorphism, existing for instance with cubic (3C polytype) or hexagonal (4H and 6H polytypes) crystalline structures. Such property provides a degree of freedom for engineering a rich assortment of intrinsic and extrinsic atomic-like deep defects. In this thesis using photoluminescence excitation spectroscopy at cryogenic temperature and a comparison to ab initio calculations I have evidence the presence of nitrogen-vacancy spin S=1 (NCVSi) defect in proton irradiated 4H-SiC. I have also developed a setup that allowed me to detect optically the S=1 spin magnetic resonance (ODMR) of the divacancy (VCVSi) in 3C-SiC, and study its hyperfine interaction with nearby carbon and silicon nuclear spins
Oo, Thein Htay. "COUPLING NITROGEN VACANCY CENTERS IN DIAMOND TO A NANOMECHANICAL OSCILLATOR." Thesis, University of Oregon, 2018. http://hdl.handle.net/1794/23120.
Full textHong, Sungkun. "Nanoscale Magnetic Imaging with a Single Nitrogen-Vacancy Center in Diamond." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10671.
Full textEngineering and Applied Sciences
Alsid, Scott T. "Optimizing chemical-vapor-deposition diamond for nitrogen-vacancy center ensemble magnetometry." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/112367.
Full textThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 119-125).
The nitrogen-vacancy (NV) center in diamond has emerged as a promising platform for high-sensitivity, vector magnetic field detection and high spatial resolution magnetic-field imaging due to its unique combination of optical and spin properties. NV diamond magnetometry has enabled a wide array of applications from the noninvasive measurement of a single neuron action potential to the mapping [mu]T-fields in [mu]m-size meteorite grains. To further improve the magnetic sensitivity of an ensemble NV magnetometer, the growth and processing of the host diamond must be taken into account. This thesis presents a systematic study of the effects of diamond processing on bulk chemical-vapor-deposition diamond. In particular, NV charge-state composition and spin decoherence times are measured for diamonds irradiated with 1 MeV electrons at doses of 1x1015-5x1019 e-/cm2 and thermally annealed at temperatures of 850°C and 1250°C. The study provides an optimal range for diamond processing and shows the quenching of the NV center at high irradiation dosage from the creation of additional vacancy-related defects.
by Scott T. Alsid.
S.M.
Wolf, Michael Scott. "COUPLING NITROGEN-VACANCY CENTER SPINS IN DIAMOND TO A FERROMAGNETIC VORTEX." Case Western Reserve University School of Graduate Studies / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=case1491817964933604.
Full textDinyari, Khodadad. "Coupling Nitrogen Vacancy Centers in Diamond Nanopillars Whispering Gallery Microresonators." Thesis, University of Oregon, 2013. http://hdl.handle.net/1794/12962.
Full textAmezcua, Mayra. "Optical and Mechanical Quantum Control of Nitrogen Vacancy Centers in Diamond." Thesis, University of Oregon, 2018. http://hdl.handle.net/1794/23743.
Full textJohnson, Sam. "The coupling of Nitrogen-Vacancy centres in diamond to tunable open-microcavities." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:a55eecba-645d-4755-8a17-d183fe8fa678.
Full textPurser, Carola Midori. "Magnetic Resonance Detection using Nitrogen-Vacancy Centers in Diamond." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1560279273608591.
Full textPham, Linh My. "Magnetic Field Sensing with Nitrogen-Vacancy Color Centers in Diamond." Thesis, Harvard University, 2013. http://dissertations.umi.com/gsas.harvard:10993.
Full textEngineering and Applied Sciences
Terada, Daiki. "Ultra-small diamond quantum sensor for bioapplications." Kyoto University, 2020. http://hdl.handle.net/2433/253301.
Full textBabinec, Thomas Michael. "Topics in Nanophotonic Devices for Nitrogen-Vacancy Color Centers in Diamond." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10461.
Full textEngineering and Applied Sciences
Fujisaku, Takahiro. "Development of quantum sensing methods using nitrogen-vacancy centers in diamonds." Doctoral thesis, Kyoto University, 2021. http://hdl.handle.net/2433/263682.
Full textShields, Brendan John. "Diamond platforms for nanoscale photonics and metrology." Thesis, Harvard University, 2014. http://dissertations.umi.com/gsas.harvard:11638.
Full textPhysics
Schröder, Tim. "Integrated photonic systems for single photon generation and quantum applications." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2013. http://dx.doi.org/10.18452/16723.
Full textThe presented thesis covers the development and investigation of novel integrated single photon (SP) sources and their application for quantum information schemes. SP generation was based on single defect centers in diamond nanocrystals. Such defect centers offer unique optical properties as they are room temperature stable, non-blinking, and do not photo-bleach over time. The fluorescent nanocrystals are mechanically stable, their size down to 20nm enabled the development of novel nano-manipulation pick-and-place techniques, e.g., with an atomic force microscope, for integration into photonic structures. Two different approaches were pursued to realize novel SP sources. First, fluorescent diamond nanocrystals were integrated into nano- and micrometer scaled fiber devices and resonators, making them ultra-stable and maintenance free. Secondly, a solid immersion microscope (SIM) was developed. Its solid immersion lens acts as a dielectric antenna for the emission of defect centers, enabling the highest photon rates of up to 2.4Mcts/s and collection efficiencies of up to 4.2% from nitrogen vacancy defect centers achieved to date. Implementation of the SIM at cryogenic temperatures enabled novel applications and fundamental investigations due to increased photon rates. The determination of the spectral diffusion time of a single nitrogen vacancy defect center (2.2µs) gave new insights about the mechanisms causing spectral diffusion. Spectral diffusion is a limiting property for quantum information applications. The table-top SIM was integrated into a compact mobile SP system with dimension of only 7x19x23cm^3 while still maintaining record-high stable SP rates. This makes it interesting for various SP applications. First, a quantum key distribution scheme based on the BB84 protocol was implemented, for the first time also with silicon vacancy defect centers. Secondly, a conceptually novel scheme for the generation of infrared SPs was introduced and realized.
Maurer, Peter. "Coherent control of diamond defects for quantum information science and quantum sensing." Thesis, Harvard University, 2014. http://dissertations.umi.com/gsas.harvard:11431.
Full textPhysics
Goss, Jonathan Paul. "A first principles study of defects in semiconductors." Thesis, University of Exeter, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361336.
Full textRiedrich-Möller, Janine, Sébastien Pezzagna, Jan Berend Meijer, Christoph Pauly, Frank Mücklich, Matthew Markham, Andrew M. Edmonds, and Christoph Becher. "Nanoimplantation and Purcell enhancement of single nitrogen-vacancy centers in photonic crystal cavities in diamond." AIP Publishing, 2015. https://ul.qucosa.de/id/qucosa%3A31859.
Full textTisler, Julia [Verfasser]. "Nitrogen-vacancy center in diamond as sensor for Fluorescence Resonance Energy Transfer Scanning Near Field Optical Microscopy / Julia Tisler." München : Verlag Dr. Hut, 2014. http://d-nb.info/1050331583/34.
Full textNeumann, Philipp [Verfasser], and Jörg [Akademischer Betreuer] Wrachtrup. "Towards a room temperature solid state quantum processor - the nitrogen-vacancy center in diamond / Philipp Neumann. Betreuer: Jörg Wrachtrup." Stuttgart : Universitätsbibliothek der Universität Stuttgart, 2012. http://d-nb.info/102469254X/34.
Full textAmponsah, Sylvester. "Optical Characterization of Nitrogen-vacancy Centers andResonance Analysis of CVD Grown Diamond MEMS Devices." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1528479091207253.
Full textAlbrecht, Roland Christoph [Verfasser], and Christoph [Akademischer Betreuer] Becher. "Coupling of a single nitrogen-vacancy center in diamond to a fiber-based microcavity / Roland Christoph Albrecht. Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2014. http://d-nb.info/1054054800/34.
Full textGonzalez, Gabriel. "ELECTRON TRANSPORT IN SINGLE MOLECULE MAGNET TRANSISTORS AND OPTICAL LAMBDA TRANSITIONS IN THE NITROGEN-VACANCY CENTER IN DIAMON." Doctoral diss., University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2976.
Full textPh.D.
Department of Physics
Sciences
Physics PhD
Neu, Elke Katja [Verfasser], and Christoph [Akademischer Betreuer] Becher. "Silicon vacancy color centers in chemical vapor deposition diamond : new insights into promising solid state single photon sources / Elke Katja Neu. Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2012. http://d-nb.info/1052338593/34.
Full textNeu-Ruffing, Elke [Verfasser], and Christoph [Akademischer Betreuer] Becher. "Silicon vacancy color centers in chemical vapor deposition diamond : new insights into promising solid state single photon sources / Elke Katja Neu. Betreuer: Christoph Becher." Saarbrücken : Saarländische Universitäts- und Landesbibliothek, 2012. http://d-nb.info/1052338593/34.
Full textDong, Wenzheng. "Quantum Information Processing with Color Center Qubits: Theory of Initialization and Robust Control." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/103438.
Full textDoctor of Philosophy
Quantum information technologies promise to offer efficient computations of certain algorithms and secure communications beyond the reach of their classical counterparts. To achieve such technologies, we must find a suitable quantum platform to manipulate the quantum information units (qubits). Color centers host spin qubits that can enable such technologies. However, it is challenging due to our incomplete understanding of their physical properties and, more importantly, the controllability and scalability of such spin qubits. In this thesis, I present a theoretical understanding of and control protocols for various color centers. By using group theory that describes the symmetry of color centers, I give a phenomenological model of spin qubit dynamics under optical control of VSi color centers in silicon carbide. I also provide an improved technique for controlling nuclear spin qubits with higher precision. Moreover, I propose a new qubit control technique that combines two methods - holonomic control and dynamical corrected control - to provide further robust qubit control in the presence of multiple noise sources. The works in this thesis provide knowledge of color center spin qubits and concrete control methods towards quantum information technologies with color center spin qubits.
Page, Michael Roy. "Interactions between spin transport and dynamics studied using spatially resolved imaging and magnetic resonance." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1480592093876192.
Full textScozzaro, Nicolas Joseph. "Ultrasensitive Measurements of Magnetism in Carbon-based Materials." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu148059474280115.
Full textJung, Young Woo. "Optical studies and biological applications of spins in semiconductors." The Ohio State University, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=osu1306523724.
Full textHarrison, Joanne Patrice. "Photodynamics of the nitrogen-vacancy colour centre in diamond." Phd thesis, 2006. http://hdl.handle.net/1885/109456.
Full textBerhane, Amanuel Michael. "Spectroscopy of single photon emitting defects in Gallium Nitride and Diamond." Thesis, 2018. http://hdl.handle.net/10453/125516.
Full textA single photon is among the few quantum mechanical systems that are finding applications in myriad fields. The applications include serving as building blocks for the ongoing endeavour to realise faster computers and secure communication technologies. As a result, a variety of platforms are being inspected to generate single photons on-demand. Point defects and complexes in wide bandgap semiconductors such as nitrogen-vacancy (NV) and silicon-vacancy (SiV) centres in diamond, carbon antisite in Silicon Carbide (SiC), etcetera, are shown to be reliable room temperature (RT), single photon emitters (SPEs). Despite reports of several defect based SPEs in diamond and other semiconductors, the exploration continues to find ideal sources for applications. The central part of this work also focuses on the discovery and characterisation of novel SPE in the device fabrication friendly material- Gallium Nitride (GaN). The other important aspect in the study of SPEs is the method by which emitters are excited. While optical technique via laser excitation is the standard approach, electrically excited single photon generation is highly desirable for large-scale nanophotonic applications. The second part of the work investigates electrically driven fluorescence from SiV ensemble in diamond, whose properties so far, were only investigated using optical excitations. Therefore, the thesis consists of two main parts. First, the discovery as well as study of a new family of SPEs in GaN via optical excitation is covered. The second part features electrically driven characterisation of SiV centre in diamond. The RT stable, SPEs are discovered in GaN films using a confocal microscope. The emitters are off-resonantly excited using a continuous wave (cw) laser of wavelength 532 nm. The centre of wavelength in the emission spectra spans a wide range of from around 600 nm to 780 nm. Also, a significant portion of the emission comes from the characteristic, narrow zero-phonon lines (ZPLs) with the mean cryogenic and RT Full Width at Half Maximum (FWHM) of around 0.3 nm and 5 nm, respectively. The nature of the defect responsible for the emission is studied experimentally via temperature resolved spectroscopy as well as numerical modelling giving a strong indication that the emitter is a defect localised near cubic inclusions. Absorption and emission polarisation properties from the SPEs in GaN is studied in detail via polarization-resolved spectroscopy. High degree of linear, emission polarisation is observed with an average visibility of more than 90 %. The absorption polarisation measurement shows that individual emitters may have different dipole orientation. In addition, brightness measurements from several of the SPEs in GaN show the average maximum intensity of around 427 kCounts/s placing the emitters among the brightest reported so far. A three-level model describes the transition kinetics of the SPEs successfully which explains some of the observed properties of the emitters such as photon statistics. A small number of the SPEs in GaN show unusual photo-induced blinking. This blinking is shown to be due to a permanent change in the transition kinetics of the emitters when exposed to a laser power above a certain threshold. This is evidenced by the change in the transition kinetics observed before and after blinking of SPEs. Combining long-time autocorrelation measurement and photon statistics analysis, numerical values for power-dependent blinking behaviours are determined. The second major result in this work is the first electrically driven luminescence from the negative charge state of Silicon-Vacancy (SiV⁻). The result was directly obtained by measuring photoluminescence (PL) and electroluminescence (EL) spectra from SiV⁻ ensemble located in PIN diamond diode. The defect was incorporated into the diode via ion implantation. Further characterisation shows that the saturation behaviour under excess carrier injection yields similar results with when the defect is pumped optically by lasers. Finally, charge state switching between the negative and neutral states of the defect was also attempted by using reverse-biased PL elucidating transition dynamics of SiV centres in diamond. This work, therefore, reports new findings in the spectroscopic studies of defect based single photon emission. Furthermore, it provides detailed photophysical studies which may serve as a benchmark for future investigation of SPEs in GaN for multiple applications. The results provide new platform as well as alternative excitation approach for the application of defect based SPEs in nanophotonics.
Rogers, Lachlan James. "Optical pumping cycle of the negative nitrogen-vacancy centre in diamond." Phd thesis, 2012. http://hdl.handle.net/1885/155811.
Full textHe, Xing-Fei. "Raman heterodyne detected magnetic resonance of the nitrogen-vacancy centre in diamond." Phd thesis, 1991. http://hdl.handle.net/1885/109549.
Full textBarson, Michael Samuel James. "The mechanical and thermal properties of the nitrogen-vacancy centre in diamond." Phd thesis, 2018. http://hdl.handle.net/1885/154250.
Full textPatange, Om. "On an Instrument for the Coherent Investigation of Nitrogen-Vacancy Centres in Diamond." Thesis, 2013. http://hdl.handle.net/10012/7955.
Full textSemonyo, Malehlohonolo. "An experimental study of diamond and the nitrogen vacancy centre as a source of single photons." Thesis, 2009. http://hdl.handle.net/10413/8320.
Full textThesis (M.Sc.)-University of KwaZulu-Natal, Westville, 2009.
Lai, Yen-Yu, and 賴彥佑. "Hybrid quantum memory with a single nitrogen-vacancy center in Diamond." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/vur42f.
Full text國立臺灣大學
物理學研究所
106
There are many kinds of physical quantum systems that have been proposed and realized as qubits to implement quantum computation and information processing. One may wish to have both the strong coupling strength between the qubit and an external control field and long coherence times for qubits: the former leads to fast and easy qubit operations; the latter maintains the coherence of the quantum state of the qubit. However, it is hard to have a qubit with both advantages. The systems, which can couple to other system strongly , are normally also easily influenced by the environment resulting in decoherence, and those with good coherence property due to the isolation from their environment cannot interact with other system well. So the idea of hybrid quantum system taking advantages of their constituents’ strengths has been proposed. Using the qubit with excellent coupling ability in the operating stage, and assisted by a quantum memory, which can transfer the quantum state between the operating qubit and storage qubit, one can avoid the decoherece in the idle time of the whole quantum processes. Here we propose a quantum memory scheme to transfer and store the quantum state of a superconducting flux qubit (FQ), as an operating unit, into the electron spin of a single nitrogen-vacancy (NV) center in diamond, as a storage unit, via a ferromagnet transducer, yttrium iron garnet (YIG). Unlike an ensemble of NV centers, the YIG moderator can enhance the effective FQ-NV-center coupling strength without introducing additional appreciable decoherence. We derive the effective interaction between the FQ and the NV center by tracing out the degrees of freedom of the collective mode of the YIG spins. We demonstrate the transfer, storage, and retrieval procedures, taking into account the effects of spontaneous decay and pure dephasing by a master equation in Lindblad form. Using realistic experimental parameters for the FQ, NV center and YIG, we find that a combined transfer, storage, and retrieval fidelity higher than 0.9, with a long storage time of 10 ms, can be achieved. This hybrid system not only acts as a promising quantum memory, but also provides an example of enhanced coupling between various systems through collective degrees of freedom.
"Understanding and withstanding the decoherence of nitrogen-vacancy center spins in diamond." 2010. http://library.cuhk.edu.hk/record=b5894461.
Full textThesis (M.Phil.)--Chinese University of Hong Kong, 2010.
Includes bibliographical references (leaves 62-68).
Abstracts in English and Chinese.
Ho, Sai Wah = Zuan shi dan-kong que zhong xin zi xuan de tui xiang gan yan jiu ji kong zhi / He Shihua.
Chapter 1 --- Introduction --- p.1
Chapter 2 --- NV center in diamond --- p.6
Chapter 2.1 --- Why NV centers? --- p.6
Chapter 2.2 --- NV center --- p.8
Chapter 2.3 --- Hamiltonian of the spin system --- p.11
Chapter 3 --- Decoherence calculation - Cluster-correlation expansion --- p.13
Chapter 3.1 --- The decoherence problem --- p.13
Chapter 3.2 --- Quantum many-body theory: History and method --- p.17
Chapter 3.3 --- General theory of cluster-correlation expansion --- p.19
Chapter 3.4 --- Different physical processes and the pictorial understanding: Spin pathways in Bloch sphere --- p.21
Chapter 3.4.1 --- Dynamical fluctuation versus inhomogeneous broadening --- p.21
Chapter 3.4.2 --- Single nuclear spin dynamics --- p.22
Chapter 3.4.3 --- Nuclear spin pair dynamics --- p.24
Chapter 3.4.4 --- Higher order spin cluster dynamics --- p.27
Chapter 4 --- Dynamical decoupling theories and experiments --- p.28
Chapter 4.1 --- Dynamical decoupling: History --- p.28
Chapter 4.2 --- Pulse sequences --- p.29
Chapter 4.2.1 --- Spin echo (SE) --- p.30
Chapter 4.2.2 --- Carr-Purcell-Meiboom-Gill (CPMG) sequence --- p.31
Chapter 4.2.3 --- Concatenated dynamical decoupling (CDD) --- p.31
Chapter 4.2.4 --- Uhrig dynamical decoupling (UDD) --- p.32
Chapter 5 --- Dynamics of the spin clusters --- p.34
Chapter 5.1 --- Convergence of CCE under external magnetic field and pulse sequence --- p.34
Chapter 5.2 --- Zero magnetic field regime: single spin and spin pair induced dynamics --- p.35
Chapter 5.2.1 --- Free induction decay --- p.36
Chapter 5.2.2 --- Dynamical decoupling control: UDD1-5 --- p.37
Chapter 5.3 --- Small magnetic field regime: Single spin and spin pair induced dynamics --- p.38
Chapter 5.3.1 --- Single spin induced dynamics: single spin induced re- vivals under dynamical decoupling sequences --- p.38
Chapter 5.3.2 --- Single spin induced dynamics: Periodicity of revivals un- der different dynamical decoupling sequences --- p.42
Chapter 5.3.3 --- Single spin induced dynamics: Short time modulation and envelope under the effect of Fermi contact and dy- namical decoupling sequences --- p.45
Chapter 5.3.4 --- "Single spin and spin pair induced dynamics: Revival, os- cillation and decay under dynamical decoupling sequences" --- p.48
Chapter 5.4 --- Large magnetic field regime: Single spin and spin pair induced dynamics --- p.50
Chapter 5.4.1 --- Free induction decay --- p.50
Chapter 5.4.2 --- Dynamical decoupling control: UDD 1-5 --- p.52
Chapter 6 --- Application: Atomic scale magnetometry --- p.55
Chapter 7 --- Conclusion --- p.59
Bibliography --- p.62
Chapter A --- Derivation of modulation and envelope frequency using second order perturbation theory --- p.69
Mc, Murtrie Roger L. "Multi-wave mixing at radio frequencies by nitrogen vacancy centres in diamond." Master's thesis, 2006. http://hdl.handle.net/1885/150990.
Full textTamang, Rajesh. "Fluorescence spectroscopy of nitrogen vacancy centers in HPHT and CVD diamonds." Doctoral thesis, 2016. https://repositorium.ub.uni-osnabrueck.de/handle/urn:nbn:de:gbv:700-2016052614492.
Full textKunuku, Srinivasu, and 蘇尼. "Study on synthesis and characterization of silicon-vacancy centers in diamond via chemical vapor deposition process." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/v63upg.
Full text國立清華大學
工程與系統科學系
105
Silicon-vacancy (SiV) centers in diamonds present exceptional spectral properties, including bright zero phonon line (ZPL) at wavelengths of 736 nm 746 nm and a narrow emission linewidth. As a single photon source, SiV center is a promising candidate for quantum computing as well as biomarking applications. The SiV centers in nanodiamonds, including diamond nanowires, diamond nanoislands, and diamond particles, present high-intensity of ZPL emissions over a narrow linewidth. In this study, we investigated the fabrication of ultrananocrystalline diamond (UNCD) nanostructures (UNCD size ~ 10 nm) and the spectral characteristics of the SiV centers contained within. SiV centers are typically created via chemical vapor deposition (CVD). In this process, Si impurities are incorporated within the diamond during the growth process, at elevated temperatures under high microwave powers. In this study, we created SiV centers in UNCD using two methods: (i) in-situ Si-doping during microwave plasma-enhanced chemical vapor deposition (MPECVD) at low growth temperatures; (ii) Si-ion implantation in UNCD and single crystalline diamond (SCD). The first method begins with in-situ Si-doping of diamond films with various granular structures grown on a Si-substrate at low temperature (< 550 oC). The films include microcrystalline diamond (MCD), nanocrystalline diamond (NCD), UNCD, and nitrogen-incorporated UNCD (N-UNCD) films. We devised a simple process for the fabrication of diamond nanostructures within these films using a self-assembled mask of Au nanodots followed by reactive ion etching (RIE) under O2/CF4 plasma. Field emission scanning electron microscopic images of the diamond nanostructures revealed the formation of vertical nanostructures with high density. UV-Raman spectroscopy confirmed that RIE did not degrade the quality of the diamond nanostructures. Photoluminescence (PL) spectroscopy revealed strong NV emissions from MCD nanocones and NCD nanotips as well as the quenching of NV emissions from UNCD nanopillars. The second process involves the in-situ Si-doping of diamond using various silicon oxide (SiO2) substrates, including SiO2, soda-lime glass, and soda-lime glass fibers, for the growth of MCD, NCD, and UNCD films. The PL spectra of the resulting UNCD diamond films revealed SiV centers with bright and clear emission at 738 nm - 740 nm and suppressed NV emissions. The UNCD formed as particulates rather than as a film on soda-lime glass fibers. Transmission electron microscopy (TEM) was used to study the influence of microstructure on the spectral characteristics of SiV centers. The TEM micrographs of UNCD films reveal the presence of large aggregate, which might be the cause of the NV emission from the UNCD films. We developed a simple process for the synthesis of SiV-UNCD particulates with bright emissions, wherein SiV-UNCD nanoclusters/soda-lime glass fibers were ultrasonicated in DI water, and then the water was spread over Si inverted pyramids. Time-resolved PL spectroscopy measurements of SiV-UNCD particulates revealed that the SiV centers have a short decay time of ~ 0.20 ns (SiV decay time ~ 1-2 ns). This can be attributed to the low quality of the UNCD, which includes a large number of defects and non-diamond carbon phases. We also developed two approaches to the fabrication of bright SiV-UNCD nanostructures; i.e., top-down approach for fabrication of SiV-UNCD nano-rods and bottom-up approach for fabrication of SiV-UNCD nano-tips. The resulting SiV-UNCD nanostructures exhibit bright emission over a narrow linewidth of ~ 7 nm 10.5 nm with shorter decay time of ~ 0.2 ns. To enhance the decay time of SiV centers, UNCD has grown on a Ti/Sapphire substrate using MPECVD, followed by Si-ion implantation under the following parameters: E = 125 keV and dose = 1013 ions/cm2. The resulting SiV-UNCD nanoclusters present bright SiV emission with ZPL width of ~ 7.0 nm and = 0.43 ns. Si-ion implantation was also performed on SCD (type Ia & type IIa) with E = 350 keV and dose = 1010 ions/cm2 to facilitate a comparison of the spectral characteristics of SiV-UNCD in high-quality diamond with SiV centers. The SiV centers in type IIa SCD present bright emission, narrow ZPL width of ~ 6 nm and enhanced decay time of = 1.30 ns. The SiV-UNCD nanostructures and SiV-UNCD particulates developed in this study have considerable potential in biomarking applications, due to their strong SiV emissions. Furthermore, the Si-ion implanted type IIa SCD samples are applicable as a single photon emitter in quantum information processing and quantum computation applications.