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Journal articles on the topic 'Silicon-vacancy centre in diamond'

Author: Grafiati

Published: 11 December 2022

Last updated: 25 January 2023

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1

Jahnke, Kay D., Alp Sipahigil, Jan M. Binder, Marcus W. Doherty, Mathias Metsch, Lachlan J. Rogers, Neil B. Manson, Mikhail D. Lukin, and Fedor Jelezko. "Electron–phonon processes of the silicon-vacancy centre in diamond." New Journal of Physics 17, no. 4 (April 8, 2015): 043011. http://dx.doi.org/10.1088/1367-2630/17/4/043011.

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2

Capelli, Marco, Lukas Lindner, Tingpeng Luo, Jan Jeske, Hiroshi Abe, Shinobu Onoda, Takeshi Ohshima, et al. "Proximal nitrogen reduces the fluorescence quantum yield of nitrogen-vacancy centres in diamond." New Journal of Physics 24, no. 3 (March 1, 2022): 033053. http://dx.doi.org/10.1088/1367-2630/ac5ca9.

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Abstract The nitrogen-vacancy colour centre in diamond is emerging as one of the most important solid-state quantum systems. It has applications to fields including high-precision sensing, quantum computing, single photon communication, metrology, nanoscale magnetic imaging and biosensing. For all of these applications, a high quantum yield of emitted photons is desirable. However, diamond samples engineered to have high densities of nitrogen-vacancy centres show levels of brightness varying significantly within single batches, or even within the same sample. Here we show that nearby nitrogen impurities quench emission of nitrogen-vacancy centres via non-radiative transitions, resulting in a reduced fluorescence quantum yield. We monitored the emission properties of nitrogen-vacancy centre ensembles from synthetic diamond samples with different concentrations of nitrogen impurities. All samples were irradiated with high energy electrons to create high densities of nitrogen-vacancy centres relative to the concentration of nitrogen impurities. While at low nitrogen densities of 1.81 ppm we measured a lifetime of 13.9 ns, we observed a strong reduction in lifetime with increasing nitrogen density. We measure a lifetime as low as 4.4 ns at a nitrogen density of 380 ppm. The change in lifetime matches a reduction in relative fluorescence quantum yield from 77.4% to 32% with an increase in nitrogen density from 88 ppm to 380 ppm, respectively. These results will inform the conditions required to optimise the properties of diamond crystals devices based on the fluorescence of nitrogen-vacancy centres. Furthermore, this work provides insights into the origin of inhomogeneities observed in high-density nitrogen-vacancy ensembles within diamonds and nanodiamonds.

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3

Dragounová, Kateřina, Tibor Ižák, Alexander Kromka, Zdeněk Potůček, Zdeněk Bryknar, and Štěpán Potocký. "Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films." Journal of Electrical Engineering 68, no. 7 (December 1, 2017): 3–9. http://dx.doi.org/10.1515/jee-2017-0048.

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AbstractNanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3, Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈3.5 cm−1) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.

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4

Doherty, Marcus W., Neil B. Manson, Paul Delaney, Fedor Jelezko, Jörg Wrachtrup, and Lloyd C. L. Hollenberg. "The nitrogen-vacancy colour centre in diamond." Physics Reports 528, no. 1 (July 2013): 1–45. http://dx.doi.org/10.1016/j.physrep.2013.02.001.

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5

Khramtsov, Igor A., and Dmitry Yu Fedyanin. "Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures." Nanomaterials 10, no. 2 (February 19, 2020): 361. http://dx.doi.org/10.3390/nano10020361.

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Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive single-photon emitters for room temperature applications. However, diamond is a material at the interface between insulators and semiconductors. Therefore, it is extremely difficult to excite color centers electrically and consequently develop bright and efficient electrically driven single-photon sources. Here, using a comprehensive theoretical approach, we propose and numerically demonstrate a concept of a single-photon emitting diode (SPED) based on a SiV center in a nanoscale AlN/diamond heterojunction device. We find that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i-type diamond region. The maximum SPEL rate is more than five times higher than what can be achieved in SPEDs based on diamond p-i-n diodes. Despite the high density of defects at the AlN/diamond interface, the SPEL rate can reach about 4 Mcps, which coincides with the limit imposed by the quantum efficiency and the lifetime of the shelving state of the SiV center. These findings provide new insights into the development of bright room-temperature electrically driven single-photon sources for quantum information technologies and, we believe, stimulate further research in this area.

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6

Sledz, Florian, Assegid M. Flatae, Stefano Lagomarsino, Savino Piccolomo, Shannon S. Nicley, Ken Haenen, Robert Rechenberg, et al. "Light emission from color centers in phosphorus-doped diamond." EPJ Web of Conferences 266 (2022): 09008. http://dx.doi.org/10.1051/epjconf/202226609008.

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Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.

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7

Baranov, P. G., Victor A. Soltamov, Alexandra A. Soltamova, Georgy V. Astakhov, and Vladimir D. Dyakonov. "Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States." Materials Science Forum 740-742 (January 2013): 425–30. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.425.

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The unique quantum properties of the nitrogen–vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the diamond. As an example, results of experiments on electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) are presented suggests that silicon vacancy (VSi) related point defects in SiC possess properties the similar to those of the NV center in diamond, which in turn make them a promising quantum system for single-defect and single-photon spectroscopy in the infrared region. Depending on the defect type, temperature, SiC polytype, and crystalline position, two opposite schemes have been observed for the optical alignment of the high-spin ground state spin sublevels population of the VSi-related defects upon irradiation with unpolorized light. Spin ensemble of VSi-related defects are shown to be prepared in a coherent superposition of the spin states even at room temperature. Zero-field (ZF) ODMR shows the possibility to manipulate of the ground state spin population by applying radiofrequency field. These altogether make VSi-related defects in SiC very favorable candidate for spintronics, quantum information processing, and magnetometry.

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8

Pushkarchuk, A. L., S. A. Kuten, V. A. Pushkarchuk, A. P. Nizovtsev, and S. Ya Kilin. "Neutral Silicon-Vacancy Color Center in Diamond: Cluster Simulation of Spatial and Hyperfine Characteristics." International Journal of Nanoscience 18, no. 03n04 (March 26, 2019): 1940010. http://dx.doi.org/10.1142/s0219581x19400106.

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One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in solids in which electrons can play a role of “fast” qubits, while nuclear spins can store quantum information for a very long time due to their exceptionally high isolation from the environment. The well-known representative of such systems is the “nitrogen-vacancy” (NV) center in diamond coupled by a hyperfine interaction to its intrinsic [Formula: see text]N/[Formula: see text]N nuclear spin or to [Formula: see text]C nuclear spins presenting in the diamond lattice. More recently, other paramagnetic color centers in diamond have been identified exhibiting even better characteristics in comparison to the NV center. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for one of the new color centers in diamond, viz., neutral “silicon-vacancy” (SiV0) color center, is a primary goal of this paper, in which we are presenting preliminary results of computer simulation of spatial and hyperfine characteristics of SiV0 center in H-terminated clusters C[Formula: see text][SiV0]H[Formula: see text] and C[Formula: see text][SiV0]H[Formula: see text].

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9

Orzechowska, Zuzanna, Mariusz Mrózek, Wojciech Gawlik, and Adam Wojciechowski. "Preparation and characterization of AFM tips with nitrogen-vacancy and nitrogen-vacancy-nitrogen color centers." Photonics Letters of Poland 13, no. 2 (June 30, 2021): 28. http://dx.doi.org/10.4302/plp.v13i2.1095.

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We demonstrate a simple dip-coating method of covering standard AFM tips with nanodiamonds containing color centers. Such coating enables convenient visualization of AFM tips above transparent samples as well as using the tip for performing spatially resolved magnetometry. Full Text: PDF ReferencesG. Binnig, C. F. Quate, C. Gerber, "Atomic Force Microscope", Phys. Rev. Lett. 56, 930 (1986). CrossRef F .J. Giessibl, "Advances in atomic force microscopy", Rev. Mod. Phys. 75, 949 (2003). CrossRef S. Kasas, G. Dietler, "Probing nanomechanical properties from biomolecules to living cells", Eur. J. Appl. Physiol. 456, 13 (2008). CrossRef C. Roduit et al., "Stiffness Tomography by Atomic Force Microscopy", Biophys. J. 97, 674 (2009). CrossRef L. A. Kolodny et al., "Spatially Correlated Fluorescence/AFM of Individual Nanosized Particles and Biomolecules", Anal. Chem. 73, 1959 (2001). CrossRef L. Rondin et al., "Magnetometry with nitrogen-vacancy defects in diamond", Rep. Prog. Phys. 77, 056503 (2014). CrossRef C. L. Degen, "Scanning magnetic field microscope with a diamond single-spin sensor", Appl. Phys. Lett. 92, 243111 (2008). CrossRef J. M. Taylor et al., "High-sensitivity diamond magnetometer with nanoscale resolution", Nat. Phys. 4, 810 (2008). CrossRef J. R. Maze et al., "Nanoscale magnetic sensing with an individual electronic spin in diamond", Nature 455, 644 (2008). CrossRef L. Rondin et al., "Nanoscale magnetic field mapping with a single spin scanning probe magnetometer", Appl. Phys. Lett. 100, 153118 (2012). CrossRef J. P. Tetienne et al., "Nanoscale imaging and control of domain-wall hopping with a nitrogen-vacancy center microscope", Science 344, 1366 (2014). CrossRef R. Nelz et al., "Color center fluorescence and spin manipulation in single crystal, pyramidal diamond tips", Appl. Phys. Lett. 109, 193105 (2016). CrossRef G. Balasubramanian et al., "Nanoscale imaging magnetometry with diamond spins under ambient conditions", Nature 455, 648 (2008). CrossRef P. Maletinsky et al., "A robust scanning diamond sensor for nanoscale imaging with single nitrogen-vacancy centres", Nat. nanotechnol. 7, 320 (2012). CrossRef L. Thiel et al., "Quantitative nanoscale vortex imaging using a cryogenic quantum magnetometer", Nat. nanotechnol. 11, 677 (2016). CrossRef F. Jelezko et al., "Single spin states in a defect center resolved by optical spectroscopy", Appl. Phys. Lett. 81, 2160 (2002). CrossRef M. W. Doherty et al., "The nitrogen-vacancy colour centre in diamond", Phys. Rep. 528, 1 (2013). CrossRef C. Kurtsiefer, S. Mayer, P. Zarda, H. Weinfurter, "Stable Solid-State Source of Single Photons", Phys. Rev. Lett. 85, 290 (2000). CrossRef A. Gruber, A. Dräbenstedt, C. Tietz, L. Fleury, J. Wrachtrup, C. Von Borczyskowski, "Scanning Confocal Optical Microscopy and Magnetic Resonance on Single Defect Centers", Science 276, 2012 (1997). CrossRef F. Dolde et al., "Electric-field sensing using single diamond spins", Nat. Phys. 7, 459 (2011). CrossRef K. Sasaki et al., "Broadband, large-area microwave antenna for optically detected magnetic resonance of nitrogen-vacancy centers in diamond", Rev. Sci. Instrum. 87, 053904 (2016). CrossRef A. M. Wojciechowski et al., "Optical Magnetometry Based on Nanodiamonds with Nitrogen-Vacancy Color Centers", Materials 12, 2951 (2019). CrossRef I. V. Fedotov et al., "Fiber-optic magnetometry with randomly oriented spins", Opt. Lett. 39, 6755 (2014). CrossRef

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10

Wambold, Raymond A., Zhaoning Yu, Yuzhe Xiao, Benjamin Bachman, Gabriel Jaffe, Shimon Kolkowitz, Jennifer T. Choy, Mark A. Eriksson, Robert J. Hamers, and Mikhail A. Kats. "Adjoint-optimized nanoscale light extractor for nitrogen-vacancy centers in diamond." Nanophotonics 10, no. 1 (November 16, 2020): 393–401. http://dx.doi.org/10.1515/nanoph-2020-0387.

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AbstractWe designed a nanoscale light extractor (NLE) for the efficient outcoupling and beaming of broadband light emitted by shallow, negatively charged nitrogen-vacancy (NV) centers in bulk diamond. The NLE consists of a patterned silicon layer on diamond and requires no etching of the diamond surface. Our design process is based on adjoint optimization using broadband time-domain simulations and yields structures that are inherently robust to positioning and fabrication errors. Our NLE functions like a transmission antenna for the NV center, enhancing the optical power extracted from an NV center positioned 10 nm below the diamond surface by a factor of more than 35, and beaming the light into a ±30° cone in the far field. This approach to light extraction can be readily adapted to other solid-state color centers.

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11

Castelletto, Stefania, Xiangping Li, and Min Gu. "Frontiers in diffraction unlimited optical methods for spin manipulation, magnetic field sensing and imaging using diamond nitrogen vacancy defects." Nanophotonics 1, no. 2 (November 1, 2012): 139–53. http://dx.doi.org/10.1515/nanoph-2012-0001.

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AbstractThe nitrogen vacancy defect centre in diamond has attracted intense research interest owing to their appealing optical and electronic properties, which have laid the ground for new approaches for diffraction unlimited optical methods. In particular, the optical detected magnetic resonance of the electron spin of nitrogen vacancy centre at room temperature underpins many areas in nanophotonics, spintronics and quantum optics. This article reviews the recent development of super-resolution imaging and sensing nanoscopy based on this fascinating defect centre in diamond. These breakthroughs are presently indicating a new class of nanoscale sensors of tiny magnetic and electric fields at room temperature, as well as emerging fluorescent and magnetic probes for next generation nanoscopy and all-optical spin recording.

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12

Neu, Elke, Christian Hepp, Michael Hauschild, Stefan Gsell, Martin Fischer, Hadwig Sternschulte, Doris Steinmüller-Nethl, Matthias Schreck, and Christoph Becher. "Low-temperature investigations of single silicon vacancy colour centres in diamond." New Journal of Physics 15, no. 4 (April 4, 2013): 043005. http://dx.doi.org/10.1088/1367-2630/15/4/043005.

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13

Grudinkin, S. A., N. A. Feoktistov, A. V. Medvedev, K. V. Bogdanov, A. V. Baranov, A. Ya Vul', and V. G. Golubev. "Luminescent isolated diamond particles with controllably embedded silicon-vacancy colour centres." Journal of Physics D: Applied Physics 45, no. 6 (January 30, 2012): 062001. http://dx.doi.org/10.1088/0022-3727/45/6/062001.

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14

Waltrich, Richard, Boaz Lubotzky, Hamza Abudayyeh, Elena S. Steiger, Konstantin G. Fehler, Niklas Lettner, Valery A. Davydov, Viatcheslav N. Agafonov, Ronen Rapaport, and Alexander Kubanek. "High-purity single photons obtained with moderate-NA optics from SiV center in nanodiamonds on a bullseye antenna." New Journal of Physics 23, no. 11 (November 1, 2021): 113022. http://dx.doi.org/10.1088/1367-2630/ac33f3.

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Abstract Coherent exchange of single photons is at the heart of applied quantum optics. The negatively-charged silicon vacancy center in diamond is among most promising sources for coherent single photons. Its large Debye–Waller factor, short lifetime and extraordinary spectral stability is unique in the field of solid-state single photon sources. However, the excitation and detection of individual centers requires high numerical aperture (NA) optics which, combined with the need for cryogenic temperatures, puts technical overhead on experimental realizations. Here, we investigate a hybrid quantum photonics platform based on silicon-vacancy center in nanodiamonds and metallic bullseye antenna to realize a coherent single-photon resource that operates efficiently down to low NA optics with an inherent resistance to misalignment.

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15

Raman Nair, Sarath, Lachlan J. Rogers, Xavier Vidal, Reece P. Roberts, Hiroshi Abe, Takeshi Ohshima, Takashi Yatsui, Andrew D. Greentree, Jan Jeske, and Thomas Volz. "Amplification by stimulated emission of nitrogen-vacancy centres in a diamond-loaded fibre cavity." Nanophotonics 9, no. 15 (September 28, 2020): 4505–18. http://dx.doi.org/10.1515/nanoph-2020-0305.

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AbstractLaser threshold magnetometry using the negatively charged nitrogen-vacancy (NV−) centre in diamond as a gain medium has been proposed as a technique to dramatically enhance the sensitivity of room-temperature magnetometry. We experimentally explore a diamond-loaded open tunable fibre-cavity system as a potential contender for the realisation of lasing with NV− centres. We observe amplification of the transmission of a cavity-resonant seed laser at 721 nm when the cavity is pumped at 532 nm and attribute this to stimulated emission. Changes in the intensity of spontaneously emitted photons accompany the amplification, and a qualitative model including stimulated emission and ionisation dynamics of the NV− centre captures the dynamics in the experiment very well. These results highlight important considerations in the realisation of an NV− laser in diamond.

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16

Muzafarova, Marina V., Ivan V. Ilyin, E. N. Mokhov, Vladimir Ilich Sankin, and P. G. Baranov. "Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance." Materials Science Forum 527-529 (October 2006): 555–58. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.555.

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Two types of a new triplet centers labeled as N-V have been observed in heavily neutron irradiated (dose of 1021 cm-2) and high-temperature annealed (2000°C) 6H-SiC crystals. The centers have an axial symmetry along c-axis. Anisotropic hyperfine splitting due to the one 14N nucleus has been observed. The EPR spectra of N-V defects in the triplet state in 6H-SiC reveal strong temperature dependence. The parameters of these centers are similar to that for well-known N-V center in diamond. It seems to consist of silicon vacancy and carbon substitutional nitrogen in the adjacent lattice cites oriented along c-axis. Similar to the diamond N-V centers in SiC have been produced by neutron irradiation and high-temperature annealing of the crystals containing nitrogen. For the first shell the structure of the N-V defect in 6H-SiC is practically identical with that in diamond. The charge state of this defect seems to be +1 compare with neutral state for nitrogensilicon vacancy defect in 6H-SiC with S=1/2.

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17

Lagomarsino, Stefano, Federico Gorelli, Mario Santoro, Nicole Fabbri, Ahmed Hajeb, Silvio Sciortino, Lara Palla, et al. "Robust luminescence of the silicon-vacancy center in diamond at high temperatures." AIP Advances 5, no. 12 (December 2015): 127117. http://dx.doi.org/10.1063/1.4938256.

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18

Dragounová, Kateřina, Zdeněk Potůček, Štěpán Potocký, Zdeněk Bryknar, and Alexander Kromka. "Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films." Journal of Electrical Engineering 68, no. 1 (January 1, 2017): 74–78. http://dx.doi.org/10.1515/jee-2017-0010.

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Abstract In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 - 300 K and used to determine the temperature dependence of the zero-phononline full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.

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19

Capelli, M., P. Reineck, D. W. M. Lau, A. Orth, J. Jeske, M. W. Doherty, T. Ohshima, A. D. Greentree, and B. C. Gibson. "Magnetic field-induced enhancement of the nitrogen-vacancy fluorescence quantum yield." Nanoscale 9, no. 27 (2017): 9299–304. http://dx.doi.org/10.1039/c7nr02093g.

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The nitrogen-vacancy (NV) centre in diamond is a remarkable optical defect with broad applications. We demonstrate that its fluorescence emission is enhanced at high magnetic fields with low excitation power.

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20

Smeltzer, Benjamin, Lilian Childress, and Adam Gali. "13C hyperfine interactions in the nitrogen-vacancy centre in diamond." New Journal of Physics 13, no. 2 (February 21, 2011): 025021. http://dx.doi.org/10.1088/1367-2630/13/2/025021.

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21

Manson, Neil B., Xing-Fei He, and Peter T. H. Fisk. "Raman heterodyne studies of the nitrogen-vacancy centre in diamond." Journal of Luminescence 53, no. 1-6 (July 1992): 49–54. http://dx.doi.org/10.1016/0022-2313(92)90104-h.

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22

Soshenko, V. V., I. S. Cojocaru, S. V. Bolshedvorskii, O. R. Rubinas, A. N. Smolyaninov, V. V. Vorobyov, V. N. Sorokin, and A. V. Akimov. "Measurement of the longitudinal relaxation time for the nitrogen nuclear spin in a nitrogen-vacancy colour centre of diamond." Quantum Electronics 51, no. 12 (December 1, 2021): 1144–47. http://dx.doi.org/10.1070/qel17654.

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Abstract A longitudinal relaxation time of a nitrogen-14 atom nuclear spin for a nitrogen-vacancy (NV) colour centre in diamond is measured by the modified double optical resonance method. The diamond sample was grown by the method of high temperature and pressure and comprised 1 ppm of NVcentres. The longitudinal relaxation time was 43(6) s, which was compared to the time calculated in the model of relaxation due to the electron spin of colour centre interaction with phonons and spin reservoir. The time measured well agrees with predictions of the model.

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23

Rose, Brendon C., Ding Huang, Zi-Huai Zhang, Paul Stevenson, Alexei M. Tyryshkin, Sorawis Sangtawesin, Srikanth Srinivasan, et al. "Observation of an environmentally insensitive solid-state spin defect in diamond." Science 361, no. 6397 (July 5, 2018): 60–63. http://dx.doi.org/10.1126/science.aao0290.

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Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0. SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near–transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.

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24

Crane, M. J., A. Petrone, R. A. Beck, M. B. Lim, X. Zhou, X. Li, R. M. Stroud, and P. J. Pauzauskie. "High-pressure, high-temperature molecular doping of nanodiamond." Science Advances 5, no. 5 (May 2019): eaau6073. http://dx.doi.org/10.1126/sciadv.aau6073.

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The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for color center generation, we rationally create silicon vacancy defects in nanodiamond and investigate them for optical pressure metrology. In addition, we show that this process can generate noble gas defects within diamond from the typically inactive argon pressure medium, which may explain the hysteresis effects observed in other high-pressure experiments and the presence of noble gases in some meteoritic nanodiamonds. Our results illustrate a general method to produce color centers in diamond and may enable the controlled generation of designer defects.

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25

Debuisschert, Thierry. "Quantum sensing with nitrogen-vacancy colour centers in diamond." Photoniques, no. 107 (March 2021): 50–54. http://dx.doi.org/10.1051/photon/202110750.

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Quantum sensing exploits the possibility of manipulating single quantum objects and of measuring external physical quantities with unprecedented accuracy. It offers new functionalities that cannot be obtained with classical means. Quantum sensors can be based on atomic vapours, cold atoms, dopants in solid-state materials, etc. In the latter category, the nitrogen vacancy centre in diamond has received particular attention in recent years due to its very attractive characteristics.

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26

Doherty, M. W., N. B. Manson, P. Delaney, and L. C. L. Hollenberg. "The negatively charged nitrogen-vacancy centre in diamond: the electronic solution." New Journal of Physics 13, no. 2 (February 21, 2011): 025019. http://dx.doi.org/10.1088/1367-2630/13/2/025019.

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27

Martin, J. P. D. "Fine structure of excited state in nitrogen-vacancy centre of diamond." Journal of Luminescence 81, no. 4 (June 1999): 237–47. http://dx.doi.org/10.1016/s0022-2313(99)00013-7.

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28

Lowther, J. E., and A. Mainwood. "A perturbed vacancy model for the R1 EPR centre in diamond." Journal of Physics: Condensed Matter 6, no. 33 (August 15, 1994): 6721–24. http://dx.doi.org/10.1088/0953-8984/6/33/019.

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29

Kukushkin, Sergey A., and Andrey V. Osipov. "Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms." Materials 14, no. 19 (September 26, 2021): 5579. http://dx.doi.org/10.3390/ma14195579.

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In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a silicon substrate Si(111) doped with boron B, and only then is this silicon converted into 3C-SiC(111), due to a chemical reaction with carbon monoxide CO. A part of the silicon vacancies that have bypassed “chemical selection” during this transformation get into the SiC. As the process of SiC synthesis proceeds at temperatures of ~1350 °C, thermal fluctuations in the SiC force the carbon atom C adjacent to the vacancy to jump to its place. In this case, an almost flat cluster of four C atoms and an additional void right under it are formed. This stable state of the vacancy, by analogy with NV centers in diamond, is designated as a C4V center. The C4V centers in the grown 3C-SiC were detected experimentally by Raman spectroscopy and spectroscopic ellipsometry. Calculations performed by methods of density-functional theory have revealed that the C4V centers have a magnetic moment equal to the Bohr magneton μB and lead to spin polarization in the SiC if the concentration of C4V centers is sufficiently high.

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30

Goss, J. P., R. Jones, S. J. Breuer, P. R. Briddon, and S. Öberg. "The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex." Physical Review Letters 77, no. 14 (September 30, 1996): 3041–44. http://dx.doi.org/10.1103/physrevlett.77.3041.

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31

Baranov, P. G., Ivan V. Ilyin, Marina V. Muzafarova, E. N. Mokhov, and S. G. Konnikov. "High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study." Materials Science Forum 483-485 (May 2005): 489–92. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.489.

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The high-temperature stable defect complexes in 6H-SiC crystals created by heavy neutron irradiation and following high-temperature annealing have been discovered by EPR. After annealing at 1500°C at least five new axially symmetric centers with the electron spin S = 1/2 and S = 1 were shown to arise in 6H-SiC crystals. The striking feature of all discovered centers is a strong hyperfine interaction with a great number (up to twelve) of equivalent host Si (C) atoms. Two models, a four-vacancy complex VSi-3VC, and a split-interstitial antisite (C2)Si or a pair of two antisites (C2)Si-SiC are discussed. There is a good probability that some of new centers could be related to the famous D1 and DII centers. After annealing at 2000°C the dc1-dc4 centers disappeared and a new triplet center labeled as N-V in the form of a silicon vacancy and a nitrogen atom in neighboring carbon substitutional position has been observed. The parameters of this center are similar to that for well-known N-V center in diamond.

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32

Fuchs, G. D., V. V. Dobrovitski, D. M. Toyli, F. J. Heremans, C. D. Weis, T. Schenkel, and D. D. Awschalom. "Excited-state spin coherence of a single nitrogen–vacancy centre in diamond." Nature Physics 6, no. 9 (July 11, 2010): 668–72. http://dx.doi.org/10.1038/nphys1716.

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33

Müller, S., M. Prieske, D. Tyralla, and F. Vollertsen. "Photoluminescence of silicon vacancy centres as conceptual indicator for the condition of diamond protection coatings." Thin Solid Films 669 (January 2019): 450–54. http://dx.doi.org/10.1016/j.tsf.2018.11.033.

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34

Wang Kai-Yue, Li Zhi-Hong, Tian Yu-Ming, Zhu Yu-Mei, Zhao Yuan-Yuan, and Chai Yue-Sheng. "Photoluminescence studies of the neutral vacancy defect known as GR1 centre in diamond." Acta Physica Sinica 62, no. 6 (2013): 067802. http://dx.doi.org/10.7498/aps.62.067802.

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35

Rogers, L. J., R. L. McMurtrie, M. J. Sellars, and N. B. Manson. "Time-averaging within the excited state of the nitrogen-vacancy centre in diamond." New Journal of Physics 11, no. 6 (June 3, 2009): 063007. http://dx.doi.org/10.1088/1367-2630/11/6/063007.

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36

Riedrich-Möller, Janine, Carsten Arend, Christoph Pauly, Frank Mücklich, Martin Fischer, Stefan Gsell, Matthias Schreck, and Christoph Becher. "Deterministic Coupling of a Single Silicon-Vacancy Color Center to a Photonic Crystal Cavity in Diamond." Nano Letters 14, no. 9 (August 20, 2014): 5281–87. http://dx.doi.org/10.1021/nl502327b.

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37

Collins, A. T., M. Kamo, and Y. Sato. "A spectroscopic study of optical centers in diamond grown by microwave-assisted chemical vapor deposition." Journal of Materials Research 5, no. 11 (November 1990): 2507–14. http://dx.doi.org/10.1557/jmr.1990.2507.

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Absorption and cathodoluminescence spectra have been recorded for single crystals of diamond and polycrystalline films of diamond, grown by microwave-assisted chemical vapor deposition (CVD) using methane and hydrogen. The investigation has been carried out to see to what extent the properties of CVD diamond are similar to those of conventional diamond, and to what extent they are unique. Studies have been made of the as-grown material, which has not been intentionally doped, and also samples that have been subjected to radiation damage and thermal annealing. The single crystals grown using methane concentrations of 0.5 to 1.0% exhibit bright blue “band A” emission and also intense edge emission, similar to the cathodoluminescence spectra of some natural type IIa diamonds. This implies that the crystals are relatively free from structural and chemical defects, a conclusion which is reinforced by the absence of any zero-phonon lines in the absorption spectra of crystals which have been subjected to radiation damage and annealing at 800 °C. Before radiation damage the spectrum does, however, reveal an absorption which increases progressively to higher energies, and which may be associated with sp2-bonded carbon. The Cathodoluminescence spectra after radiation damage indicate that the crystals contain some isolated nitrogen, and the detection of H3 luminescence, following thermal annealing at 800 °C, demonstrates for the first time that these samples contain small concentrations of nitrogen pairs. All of the polycrystalline films, grown using methane concentrations between 0.3 and 1.5%, have an absorption which increases progressively to higher energies, and which again is attributed to sp2-bonded carbon. This absorption is stronger in the films grown using higher methane concentrations. Films grown at a methane concentration of 0.3% also exhibit bright blue cathodoluminescence, although the edge emission is undetectably weak. The use of higher methane concentrations produces films with evidence in the cathodoluminescence spectra of nitrogen + vacancy and nitrogen + interstitial complexes, as well as optical centers unique to CVD diamond. One particular defect produces an emission and absorption line at 1.681 eV. By implanting conventional diamonds with 29Si ions it has been confirmed that this center involves silicon, and it has been shown that the 1.681 eV luminescence is relatively more intense in implanted diamonds which have a high concentration of isolated nitrogen.

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38

Michaels, Cathryn P., Jesús Arjona Martínez, Romain Debroux, Ryan A. Parker, Alexander M. Stramma, Luca I. Huber, Carola M. Purser, Mete Atatüre, and Dorian A. Gangloff. "Multidimensional cluster states using a single spin-photon interface coupled strongly to an intrinsic nuclear register." Quantum 5 (October 19, 2021): 565. http://dx.doi.org/10.22331/q-2021-10-19-565.

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Photonic cluster states are a powerful resource for measurement-based quantum computing and loss-tolerant quantum communication. Proposals to generate multi-dimensional lattice cluster states have identified coupled spin-photon interfaces, spin-ancilla systems, and optical feedback mechanisms as potential schemes. Following these, we propose the generation of multi-dimensional lattice cluster states using a single, efficient spin-photon interface coupled strongly to a nuclear register. Our scheme makes use of the contact hyperfine interaction to enable universal quantum gates between the interface spin and a local nuclear register and funnels the resulting entanglement to photons via the spin-photon interface. Among several quantum emitters, we identify the silicon-29 vacancy centre in diamond, coupled to a nanophotonic structure, as possessing the right combination of optical quality and spin coherence for this scheme. We show numerically that using this system a 2×5-sized cluster state with a lower-bound fidelity of 0.5 and repetition rate of 65 kHz is achievable under currently realised experimental performances and with feasible technical overhead. Realistic gate improvements put 100-photon cluster states within experimental reach.

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39

Tamarat, Ph, N. B. Manson, J. P. Harrison, R. L. McMurtrie, A. Nizovtsev, C. Santori, R. G. Beausoleil, et al. "Spin-flip and spin-conserving optical transitions of the nitrogen-vacancy centre in diamond." New Journal of Physics 10, no. 4 (April 30, 2008): 045004. http://dx.doi.org/10.1088/1367-2630/10/4/045004.

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40

Lai, Shoulong, Weixia Shen, Zhuangfei Zhang, Chao Fang, Yuewen Zhang, Liangchao Chen, Qianqian Wang, Biao Wan, and Xiaopeng Jia. "High-pressure high-temperature industrial preparation of micron-sized diamond single crystals with silicon-vacancy colour centres." International Journal of Refractory Metals and Hard Materials 105 (June 2022): 105806. http://dx.doi.org/10.1016/j.ijrmhm.2022.105806.

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41

Himics, L., M. Veres, S. Tóth, I. Rigó, and M. Koós. "Origin of the asymmetric zero-phonon line shape of the silicon-vacancy center in nanocrystalline diamond films." Journal of Luminescence 215 (November 2019): 116681. http://dx.doi.org/10.1016/j.jlumin.2019.116681.

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42

Capelli, M., A. H. Heffernan, T. Ohshima, H. Abe, J. Jeske, A. Hope, A. D. Greentree, P. Reineck, and B. C. Gibson. "Increased nitrogen-vacancy centre creation yield in diamond through electron beam irradiation at high temperature." Carbon 143 (March 2019): 714–19. http://dx.doi.org/10.1016/j.carbon.2018.11.051.

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43

Goss, J. P., P. R. Briddon, R. Jones, and S. Sque. "The vacancy–nitrogen–hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material." Journal of Physics: Condensed Matter 15, no. 39 (September 19, 2003): S2903—S2911. http://dx.doi.org/10.1088/0953-8984/15/39/014.

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44

Gao, Shang, Ren Ke Kang, Dong Ming Guo, and Quan Sheng Huang. "Study on the Subsurface Damage Distribution of the Silicon Wafer Ground by Diamond Wheel." Advanced Materials Research 126-128 (August 2010): 113–18. http://dx.doi.org/10.4028/www.scientific.net/amr.126-128.113.

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Using the cross-section angle polishing microscopy, the subsurface damage of the silicon wafers (100) ground by the diamond wheels with different grain size were investigated, and subsurface damage distributions in different crystal orientations and radial locations of the silicon wafers (100) were analyzed. The experiment results showed that the grain size of diamond wheel has great influence on the subsurface damage depth of the ground wafer. On the ground wafer without spark-out process, the subsurface damage depth increased along the radical direction from the centre to the edge and the subsurface damage depth in <110> crystal orientation was larger than that in <100> crystal orientation; but on the ground wafer with spark-out process, the subsurface damage depth in different crystal orientations and radial locations become uniform.

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45

Gil, Bernard, Guillaume Cassabois, Ramon Cusco, Giorgia Fugallo, and Lluis Artus. "Boron nitride for excitonics, nano photonics, and quantum technologies." Nanophotonics 9, no. 11 (June 29, 2020): 3483–504. http://dx.doi.org/10.1515/nanoph-2020-0225.

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AbstractWe review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton–phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 µm in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.

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46

Ardavan, A., and G. A. D. Briggs. "Quantum control in spintronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1948 (August 13, 2011): 3229–48. http://dx.doi.org/10.1098/rsta.2011.0009.

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Superposition and entanglement are uniquely quantum phenomena. Superposition incorporates a phase that contains information surpassing any classical mixture. Entanglement offers correlations between measurements in quantum systems that are stronger than any that would be possible classically. These give quantum computing its spectacular potential, but the implications extend far beyond quantum information processing. Early applications may be found in entanglement-enhanced sensing and metrology. Quantum spins in condensed matter offer promising candidates for investigating and exploiting superposition and entanglement, and enormous progress is being made in quantum control of such systems. In gallium arsenide (GaAs), individual electron spins can be manipulated and measured, and singlet–triplet states can be controlled in double-dot structures. In silicon, individual electron spins can be detected by ionization of phosphorus donors, and information can be transferred from electron spins to nuclear spins to provide long memory times. Electron and nuclear spins can be manipulated in nitrogen atoms incarcerated in fullerene molecules, which in turn can be assembled in ordered arrays. Spin states of charged nitrogen vacancy centres in diamond can be manipulated and read optically. Collective spin states in a range of materials systems offer scope for holographic storage of information. Conditions are now excellent for implementing superposition and entanglement in spintronic devices, thereby opening up a new era of quantum technologies.

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47

Helwig, A., G. Müller, G. Sberveglieri, and M. Eickhoff. "On the Low-Temperature Response of Semiconductor Gas Sensors." Journal of Sensors 2009 (2009): 1–17. http://dx.doi.org/10.1155/2009/620720.

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The present paper compares three different kinds of semiconductor gas sensing materials: metal oxides (MOX), hydrogen-terminated diamond (HD), and hydrogenated amorphous silicon (a-Si:H). Whereas in MOX materials oxygen is the chemically reactive surface species, HD and a-Si:H are covalently bonded semiconductors with hydrogenterminated surfaces. We demonstrate that these dissimilar semiconductor materials exhibit the same kind of low-temperature gas response. This low-temperature response-mechanism is mediated by a thin layer of adsorbed water with the semiconductor materials themselves acting as pH sensors. In this adsorbate-limited state the gas sensitivity is limited to molecular species that can easily dissolve in and subsequently undergo electrolytic dissociation. At higher temperatures, where a closed layer of adsorbed water can no longer exist, the gas response is limited by direct molecule-semiconductor interactions. In this latter mode of operation, MOX gas sensors respond to adsorbed gases according to their different oxidising or reducing properties. Hydrogenated amorphous silicon (a-Si:H), on the other hand, exhibits a significantly different cross sensitivity profile, revealing that gas-surface interactions may largely be restricted to analyte molecules with lone-pair and electron-deficient three-centre orbitals.

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48

He Jian, 何健, 刘金龙 Liu Jinlong, 修青磊 Xiu Qinglei, 孙志嘉 Sun Zhijia, 安康 An kang, 郑宇亭 Zheng Yuting, 魏俊俊 Wei Junjun, 陈良贤 Chen Liangxian, and 李成明 Li Chengming. "辐照与退火对金刚石氮空位色心产率的影响." Acta Optica Sinica 42, no. 13 (2022): 1316001. http://dx.doi.org/10.3788/aos202242.1316001.

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49

Rudnicki, Daniel S., Mariusz Mrózek, Wojciech Gawlik, and Krzysztof Wojciechowski. "Diamond nanocrystals with nitrogen-vacancy centers as new type temperature sensors." Mechanik, no. 5-6 (May 2016): 526–27. http://dx.doi.org/10.17814/mechanik.2016.5-6.69.

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50

Luo, T., L. Lindner, J. Langer, V. Cimalla, X. Vidal, F. Hahl, C. Schreyvogel, et al. "Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications." New Journal of Physics 24, no. 3 (March 1, 2022): 033030. http://dx.doi.org/10.1088/1367-2630/ac58b6.

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Abstract The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV− concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in bulk chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over four orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2–20 parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin–spin coherence times T 2 ranging from 45.5 to 549 μs for CVD diamonds containing 168 to 1 parts per billion NV− centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.

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