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Dissertations / Theses on the topic 'Silvaco ATLAS'

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Published: 4 June 2021

Last updated: 14 February 2022

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Garcia, Baldomero. "Indium gallium nitride multijunction solar cell simulation using silvaco atlas." Thesis, Monterey, Calif. : Naval Postgraduate School, 2007. http://bosun.nps.edu/uhtbin/hyperion-image.exe/07Jun%5FGarcia.pdf.

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Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, June 2007.
Thesis Advisor(s): Sherif Michael. "June 2007." Includes bibliographical references (p. 91-94). Also available in print.

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Green, Shawn E. "Interdigitated back-surface-contact solar cell modeling using Silvaco Atlas." Thesis, Monterey, California: Naval Postgraduate School, 2015. http://hdl.handle.net/10945/45861.

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The Silvaco Atlas semiconductor modeling software was used to simulate an interdigitated back-surface-contact solar cell. The cell is modeled after the silicon-based Sunpower Corporation A-300 solar cell, which contains a number of unique features that give it advantages over conventional solar cells. This simulation attempted to match as closely as possible the results measured by the National Renewable Energy Laboratory from the A-300 cell in order to validate the model. This model was then used to investigate the effects of making the A-300 thinner, which would permit its use in military solar blanket applications. A thin and flexible solar cell is ideal for this application due to its lighter weight, making it portable and flexible, which increases its ruggedness. The ability to simulate an interdigitated back-surface-contact cell also allows future work using computer algorithms to improve power output results as well as investigations into using materials other than silicon, which may further improve power output.

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Gelinas, Robert. "A novel approach to modeling tunnel junction diodes using Silvaco Atlas software /." Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Dec%5FGelinas.pdf.

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Schiavo, Daniel. "Modeling Radiation Effects on a Triple Junction Solar Cell using Silvaco ATLAS." Thesis, Monterey, California. Naval Postgraduate School, 2012. http://hdl.handle.net/10945/7412.

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In this research, Silvaco ATLAS, an advanced virtual wafer fabrication tool, was used to model the effects of radiation on a triple junction InGaP/GaAs/Ge solar cell. A Silvaco ATLAS model of a triple junction InGaP/GaAs/Ge cell was created by first creating individual models for solar cells composed of each material. Realistic doping levels were used and thicknesses were varied to produce the design parameters and create reasonably efficient solar cell models for testing. After the individual solar cells were built, defects simulating the damage caused by radiation were introduced into the semiconductor model. After showing that the defects had a noticeable effect on the characteristics of the individual cells, a triple-junction solar cell created by layering the individual cells was then modeled. Work from previous NPS theses provided the background for modeling solar cells and the effects of radiation using Silvaco ATLAS. Data from another thesis provided the number of defects associated with the different fluence levels simulated.

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Garfrerick, Adam R. "Modeling Heterogeneous Carbon Nanotube Networks for Photovoltaic Applications Using Silvaco Atlas Software." Thesis, Monterey, California. Naval Postgraduate School, 2012. http://hdl.handle.net/10945/7345.

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Recent developments in carbon nanotube technology have allowed for semi-transparent electrodes to be created which can possibly improve the efficiency of solar cells. A method for simulating the use of semi-transparent carbon nanotube networks as a charge collector for solar cells in Silvaco ATLAS software is presented in this thesis. Semi-transparent carbon nanotube networks allow for a greater area of charge collection on the surface of solar cells as well as a lower resistance path for charge carriers to travel to the top contact grid lines. These properties can decrease the required area of a solar cell covered by metal contacts, allowing a greater amount of light input. The metal contacts which transport charge carriers to the edge of the device can also be made thicker and more spread out, lowering the resistance in the metal gridlines of solar cells. The model for semi-transparent carbon nanotube networks presented in this thesis is incorporated into a solar cell which is simulated in Silvaco ATLAS software. The performance of a cell with and without the carbon nanotube network is compared, taking into account the limitations of the simulation software.

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Gelinas, Robert J. "A novel approach to modeling tunnel junction diodes using Silvaco Atlas software." Thesis, Monterey, California. Naval Postgraduate School, 2005. http://hdl.handle.net/10945/1784.

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This thesis investigates the ability to model a tunnel junction device using the ATLAS device simulator by Silvaco International. The tunnel junction is a critical component of a multijunction solar cell. This thesis will concentrate on simulating the tunnel junction for application as part of a multijunction solar cell. It will try several methods, in ATLAS device simulator, to produce a model of the tunnel junction that can later be used while designing multijunction devices. These methods will consist of the review of past work, attempting to modify past work to be applied in the current design, producing a new tunnel junction simulation from the ground-up, and review of the simulations of similar devices to learn if they can be modified and applied to making a working tunnel junction model.

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Jrad, Abdelhak. "Elaboration, characterization and design of ZnS thin films for optoelectronic applications." Thesis, Sorbonne Paris Cité, 2017. http://www.theses.fr/2017USPCC074/document.

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Le sulfure de zinc est l'un des premiers semiconducteurs découverts. Il a un grand potentiel d’applications grâces à ses propriétés physicochimiques. Il est intensément utilisé dans des applications optoélectroniques, photocatalytiques et pour la détection de gaz. En particulier, il est utilisé pour des applications photovoltaïques. Dans ce contexte, nous avons commencé par l’étude de l’effet du dopage par des métaux de transition (manganèse, cobalt et cuivre) sur les propriétés structurales, microstructurales, morphologiques, optiques, électriques et magnétiques des couches minces de sulfure de zinc préparées par la technique de dépôt chimique en solution (chemical bath deposition (CBD)) par diffraction aux rayons X, spectroscopie photoélectronique X, spectroscopie Raman, spectroscopie infrarouge, microscopie électronique à balayage, spectrophotométrie UV-Vis-NIR, effet Hall et SQUID. En second lieu nous avons étudié l’effet de la variation de l’épaisseur des couches formant la cellule photovoltaïque à base de Cu(In,Ga)Se2 par la simulation numérique à deux dimensions sous éclairement AM1.5 de puissance 100 mW/cm2 effectué sous Silvaco ATLAS
Zinc sulfide is one of the first semiconductors discovered. It has great potential application thanks to its physicochemical properties. It is used extensively in optoelectronic, photocatalytic and gas detection applications. In particular, it is used for photovoltaic applications. In this work, the effect of doping by transition metals (manganese, cobalt and copper) on the structural, microstructural, morphological, optical, electrical and magnetic properties of zinc sulfide thin films prepared by chemical bath deposition (CBD) technique are studied by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, infrared spectroscopy, scanning electron microscopy, UV-VIS-NIR spectrophotometry, Hall effect and SQUID. The modeling and optimization of higher efficiency Cu(In,Ga)Se2 solar cells are also investigated in this thesis for various layers thickness by using Silvaco ATLAS

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Fotis, Konstantinos. "Modeling and simulation of a dual-junction CIGS solar cell using Silvaco ATLAS." Thesis, Monterey, California. Naval Postgraduate School, 2012. http://hdl.handle.net/10945/27831.

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The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell, using a CIGS bottom cell and different thin-film designs as a top cell, was conducted in order to increase the current record efficiency of 20.3% for a single CIGS cell. This was accomplished through modeling and simulation using Silvaco ATLASTM, an advanced virtual wafer-fabrication tool. A Silvaco ATLASTM model of a single CIGS cell was created by utilizing actual solar cell parameters (such as layer thicknesses, gallium ratio, doping levels and materials properties) documented in different papers, and work from previous NPS theses provided the background for modeling with Silvaco ATLASTM. After the individual CIGS solar cells were built, a dual-junction cell was created by adding the layers of another CIGS solar cell whose parameters (layers thicknesses, Ga ratio) were varied to produce an optimum efficiency of 24%. This approach is promising to produce a multi-junction CIGS cell with record efficiency.

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Sullivan, Brian P. "The effect of temperature on the optimization of photovoltaic cells using Silvaco ATLAS modeling." Thesis, Monterey, California. Naval Postgraduate School, 2010. http://hdl.handle.net/10945/5239.

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In this thesis, the author analyzes the effect of temperature on the performance of photovoltaic cells using a virtual wafer fabrication tool called Silvaco ATLAS. Work from a previous Naval Postgraduate School thesis provided the initial InGaP/GaAs/Ge triple-junction solar cell design used in this analysis. As is often done, the previous work on this solar cell involved optimizing it at 300 K, even though operating temperatures are typically higher. Therefore, for this thesis, the author models each subcell of the multijunction solar cell at 275 to 400 K in 25-degree increments while varying their thicknesses and doping levels, as well as varying the molecular composition of InGaP. The author chose to vary these design parameters to observe their effect on performance and suggest a better design for operating at higher temperatures. The percent improvement increases to more than 11.9% as the temperature increases to 400 K when the author increases the mole fraction of InGaP and the doping in the GaAs emitter and the base of each subcell.

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Jogi, Sreeram. "Modelling of GaN Power Switches." University of Toledo / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1431717800.

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VanDyke, Jamie E. "Modeling laser effects on multi-junction solar cells using Silvaco ATLAS software for spacecraft power beaming applications." Thesis, Monterey, California : Naval Postgraduate School, 2010. http://edocs.nps.edu/npspubs/scholarly/theses/2010/Jun/10Jun%5FVanDyke.pdf.

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Thesis (M.S. in Space Systems Operations)--Naval Postgraduate School, June 2010.
Thesis Advisor(s): Michael, Sherif ; Second Reader: Scott, Alan. "June 2010." Description based on title screen as viewed on July 14, 2010. Author(s) subject terms: Solar Cell, Photovoltaic, Directed Energy, Power Beaming, Wireless Power Transfer, Multi-junction, Laser, Silvaco, Modeling, Simulation. Includes bibliographical references (p. 115-117). Also available in print.

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Vineyard, Gerald E. "Investigating the electrothermal characteristics of a Gate Turn Off thyristor during turn-off using SILVACO ALTAS [sic] ATLAS." Thesis, Monterey, Calif. : Naval Postgraduate School, 2009. http://edocs.nps.edu/npspubs/scholarly/theses/2009/Jun/09Jun%5FVineyard.pdf.

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Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, June 2009.
Thesis Advisor(s): Weatherford, Todd R. ; Ciezki, John G. "June 2009." Description based on title screen as viewed on July 14, 2009. Author(s) subject terms: Gate Turn Off thyristor, GTO, pulsed power, current interruption, thermal and electric modeling, inductive turn-off, safe operating area, SOA. Includes bibliographical references (p. 127-128). Also available in print.

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Cho, Hanho. "Optically Powered Logic Transistor." Diss., CLICK HERE for online access, 2008. http://contentdm.lib.byu.edu/ETD/image/etd2525.pdf.

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Sanders, Michael H. "Modeling of operating temperature performance of triple junction solar cells using Silvaco's ATLAS." Thesis, Monterey, Calif. : Naval Postgraduate School, 2007. http://bosun.nps.edu/uhtbin/hyperion-image.exe/07Sep%5FSanders.pdf.

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Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, September 2007.
Thesis Advisor(s): Michael, Sherif. "September 2007." Description based on title screen as viewed on October 23, 2007. Includes bibliographical references (p. 97-99). Also available in print.

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Crespin, Aaron L. "A novel approach to modeling the effects of radiation in Gallium-Arsenide solar cells using Silvaco's atlas software." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Sept%5FCrespin.pdf.

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"Simulation of GaN CAVETs in Silvaco Atlas." Master's thesis, 2019. http://hdl.handle.net/2286/R.I.53600.

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abstract: Gallium Nitride (GaN) based Current Aperture Vertical Electron Transistors (CAVETs) present many appealing qualities for applications in high power, high frequency devices. The wide bandgap, high carrier velocity of GaN make it ideal for withstanding high electric fields and supporting large currents. The vertical topology of the CAVET allows for more efficient die area utilization, breakdown scaling with the height of the device, and burying high electric fields in the bulk where they will not charge interface states that can lead to current collapse at higher frequency. Though GaN CAVETs are promising new devices, they are expensive to develop due to new or exotic materials and processing steps. As a result, the accurate simulation of GaN CAVETs has become critical to the development of new devices. Using Silvaco Atlas 5.24.1.R, best practices were developed for GaN CAVET simulation by recreating the structure and results of the pGaN insulated gate CAVET presented in chapter 3 of [8]. From the results it was concluded that the best simulation setup for transfer characteristics, output characteristics, and breakdown included the following. For methods, the use of Gummel, Block, Newton, and Trap. For models, SRH, Fermi, Auger, and impact selb. For mobility, the use of GANSAT and manually specified saturation velocity and mobility (based on doping concentration). Additionally, parametric sweeps showed that, of those tested, critical CAVET parameters included channel mobility (and thus doping), channel thickness, Current Blocking Layer (CBL) doping, gate overlap, and aperture width in rectangular devices or diameter in cylindrical devices.
Dissertation/Thesis
Masters Thesis Electrical Engineering 2019

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Lin, Yang-You, and 林沇佑. "The Impact on Photovoltaic Efficiency with Regards to Defect Densities of Amorphous Silicon Layers and Carrier Recombination Velocity at Interfaces in a Heterojunction Solar Cell Using Silvaco ATLAS." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/15593378593498140236.

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碩士
大葉大學
電機工程學系
98
This study involves the novel heterojunction with intrinsic thin layer (HIT) solar cell structure. Combining the advantages of both crystalline silicon and amorphous silicon, a new structure of silicon-based solar cell was proposed - the heterojunction with an intrinsic thin layer (HIT) solar cell. It has high stability and large light absorption coefficient. It is manufactured under low temperature deposit process, which results in a low cost thin film HIT solar cell with high conversion efficiency. The influence of various layer materials and interfaces on the performance of n-type c-Si based bifacial HIT solar cell has been investigated by using the Silvaco TCAD simulation software. Accordingly, the design optimization of HIT solar cell was proven.

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"Cost-Effective Integrated Wireless Monitoring of Wafer Cleanliness Using SOI Technology." Master's thesis, 2010. http://hdl.handle.net/2286/R.I.8800.

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abstract: The thesis focuses on cost-efficient integration of the electro-chemical residue sensor (ECRS), a novel sensor developed for the in situ and real-time measurement of the residual impurities left on the wafer surface and in the fine structures of patterned wafers during typical rinse processes, and wireless transponder circuitry that is based on RFID technology. The proposed technology uses only the NMOS FD-SOI transistors with amorphous silicon as active material with silicon nitride as a gate dielectric. The proposed transistor was simulated under the SILVACO ATLAS Simulation Framework. A parametric study was performed to study the impact of different gate lengths (6 μm to 56 μm), electron motilities (0.1 cm2/Vs to 1 cm2/Vs), gate dielectric (SiO2 and SiNx) and active materials (a-Si and poly-Si) specifications. Level-1 models, that are accurate enough to acquire insight into the circuit behavior and perform preliminary design, were successfully constructed by analyzing drain current and gate to node capacitance characteristics against drain to source and gate to source voltages. Using the model corresponding to SiNx as gate dielectric, a-Si:H as active material with electron mobility equal to 0.4 cm2/V-sec, an operational amplifier was designed and was tested in unity gain configuration at modest load-frequency specifications.
Dissertation/Thesis
M.S. Electrical Engineering 2010

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