Log in

Relevant bibliographies by topics / Simulation SCAPS-1D / Journal articles

To see the other types of publications on this topic, follow the link: Simulation SCAPS-1D.

Journal articles on the topic 'Simulation SCAPS-1D'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Simulation SCAPS-1D.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Sawicka-Chudy, P., Z. Starowicz, G. Wisz, et al. "Simulation of TiO2/CuO solar cells with SCAPS-1D software." Materials Research Express 6, no. 8 (2019): 085918. http://dx.doi.org/10.1088/2053-1591/ab22aa.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Mostefaoui, M., H. Mazari, S. Khelifi, A. Bouraiou, and R. Dabou. "Simulation of High Efficiency CIGS Solar Cells with SCAPS-1D Software." Energy Procedia 74 (August 2015): 736–44. http://dx.doi.org/10.1016/j.egypro.2015.07.809.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Zhou, Xiangyu, and Junfeng Han. "Design and simulation of C2N based solar cell by SCAPS-1D software." Materials Research Express 7, no. 12 (2020): 126303. http://dx.doi.org/10.1088/2053-1591/abcdd6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Mandadapu, Usha. "Simulation and Analysis of Lead based Perovskite Solar Cell using SCAPS-1D." Indian Journal of Science and Technology 10, no. 1 (2017): 1–8. http://dx.doi.org/10.17485/ijst/2017/v11i10/110721.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Mandadapu, Usha, K. Thyagarajan, and S. Victor Vedanayakam. "Simulation and Analysis of Lead based Perovskite Solar Cell using SCAPS-1D." Indian Journal of Science and Technology 10, no. 11 (2017): 1–8. http://dx.doi.org/10.17485/ijst/2017/v10i11/110721.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Sadanand and D. K. Dwivedi. "Numerical Simulation for Enhancement of the Output Performance of CZTS Based Thin Film Photovoltaic Cell." Advanced Science, Engineering and Medicine 12, no. 1 (2020): 88–94. http://dx.doi.org/10.1166/asem.2020.2526.

Full text

Abstract:

The performance of CZTS thin film photovoltaic cell has been simulated using SCAPS-1D (Solar cell capacitance simulator). The thickness of CZTS absorber layer, ZnO buffer layer and ZnO doped with Al window layer have been varied to optimize the overall output performance of CZTS based thin film photovoltaic cell. Simulation show the favorable result which can help to prove the feasibility of highly efficient CZTS thin film photovoltaic cell.

APA, Harvard, Vancouver, ISO, and other styles

7

T, Joseph Mebelson, and Elampari K. "Numerical Simulation for Optimal Thickness Combination of CdS/ZnS Dual Buffer Layer CuInGaSe2 Solar Cell Using SCAPS 1D." Indian Journal of Science and Technology 12, no. 45 (2019): 01–06. http://dx.doi.org/10.17485/ijst/2019/v12i45/148395.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Mouhammed, Adnan Alwan, and Ayed N. Saleh. "Simulation Effect of Ga2O3 layer thickness on CdTe solar cell by SCAPS-1D." Tikrit Journal of Pure Science 24, no. 6 (2019): 110. http://dx.doi.org/10.25130/j.v24i6.895.

Full text

Abstract:

The effect of Ga2O3 thickness on CdTe cells was studied using the SCAPS-1D simulator. The best solar cell efficiency (14.65%) was found at the thickness of the gallium oxide layer (1-10nm) and the cell efficiency (η) decrease with an increase in the thickness of the oxide layer and the decrease of the fill factor, thus decreasing the voltage current (I-V) and decreasing the current of the short circuit (Isc). The value of the open circuit voltage (VOC) is approximately constant and at 0.76V. The optical properties of the cell of quantitative efficiency are 86% and decrease within 18nm  http://dx.doi.org/10.25130/tjps.24.2019.116

APA, Harvard, Vancouver, ISO, and other styles

9

Anwar, Farhana, Rafee Mahbub, Sakin Sarwar Satter, and Saeed Mahmud Ullah. "Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance." International Journal of Photoenergy 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/9846310.

Full text

Abstract:

Simulation has been done using SCAPS-1D to examine the efficiency of CH3NH3SnI3-based solar cells including various HTM layers such as spiro-OMeTAD, Cu2O, and CuSCN. ZnO nanorod array has been considered as an ETM layer. Device parameters such as thickness of the CH3NH3SnI3 layer, defect density of interfaces, density of states, and metal work function were studied. For optimum parameters of all three structures, efficiency of 20.21%, 20.23%, and 18.34% has been achieved for spiro-OMeTAD, Cu2O, and CuSCN, respectively. From the simulations, an alternative lead-free perovskite solar cell is introduced with the CH3NH3SnI3 absorber layer, ZnO nanorod ETM layer, and Cu2O HTM layer.

APA, Harvard, Vancouver, ISO, and other styles

10

Ouédraogo, S., F. Zougmoré, and J. M. Ndjaka. "Numerical Analysis of Copper-Indium-Gallium-Diselenide-Based Solar Cells by SCAPS-1D." International Journal of Photoenergy 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/421076.

Full text

Abstract:

We used a one-dimensional simulation program Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) to investigate Copper-Indium-Gallium-Diselenide- (CIGS-) based solar cells properties. Starting with a conventional ZnO-B/i-ZnO/CdS/CIGS structure, we simulated the parameters of current-voltage characteristics and showed how the absorber layer thickness, hole density, and band gap influence the short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and efficiency of solar cell. Our simulation results showed that all electrical parameters are greatly affected by the absorber thickness (w) below 1000 nm, due to the increase of back-contact recombination and very poor absorption. Increasing hole density (p) or absorber band gap (Eg) improvesVocand leads to high efficiency, which equals value of 16.1% whenp= 1016 cm−3andEg=1.2 eV. In order to reduce back-contact recombination, the effect of a very thin layer with high band gap inserted near the back contact and acting as electrons reflector, the so-called back-electron reflector (EBR), has been investigated. The performances of the solar cells are significantly improved, when ultrathin absorbers (w< 500 nm) are used; the corresponding gain ofJscdue to the EBR is 3 mA/cm2. Our results are in good agreement with those reported in the literature from experiments.

APA, Harvard, Vancouver, ISO, and other styles

11

Yasin, S., T. Al Zoubi, and M. Moustafa. "Design and simulation of high efficiency lead-free heterostructure perovskite solar cell using SCAPS-1D." Optik 229 (March 2021): 166258. http://dx.doi.org/10.1016/j.ijleo.2021.166258.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Al-Hattab, Mohamed, L'houcine Moudou, Mohammed Khenfouch, Omar Bajjou, Younes Chrafih, and Khalid Rahmani. "Numerical simulation of a new heterostructure CIGS/GaSe solar cell system using SCAPS-1D software." Solar Energy 227 (October 2021): 13–22. http://dx.doi.org/10.1016/j.solener.2021.08.084.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Moustafa, Mohamed Orabi, and Tariq Alzoubi. "Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS." Key Engineering Materials 821 (September 2019): 407–13. http://dx.doi.org/10.4028/www.scientific.net/kem.821.407.

Full text

Abstract:

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm−3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.

APA, Harvard, Vancouver, ISO, and other styles

14

Samiul Islam, Md, K. Sobayel, Ammar Al-Kahtani, et al. "Defect Study and Modelling of SnX3-Based Perovskite Solar Cells with SCAPS-1D." Nanomaterials 11, no. 5 (2021): 1218. http://dx.doi.org/10.3390/nano11051218.

Full text

Abstract:

Recent achievements, based on lead (Pb) halide perovskites, have prompted comprehensive research on low-cost photovoltaics, in order to avoid the major challenges that arise in this respect: Stability and toxicity. In this study, device modelling of lead (Pb)-free perovskite solar cells has been carried out considering methyl ammonium tin bromide (CH3NH3SnBr3) as perovskite absorber layer. The perovskite structure has been justified theoretically by Goldschmidt tolerance factor and the octahedral factor. Numerical modelling tools were used to investigate the effects of amphoteric defect and interface defect states on the photovoltaic parameters of CH3NH3SnBr3-based perovskite solar cell. The study identifies the density of defect tolerance in the absorber layer, and that both the interfaces are 1015 cm−3, and 1014 cm−3, respectively. Furthermore, the simulation evaluates the influences of metal work function, uniform donor density in the electron transport layer and the impact of series resistance on the photovoltaic parameters of proposed n-TiO2/i-CH3NH3SnBr3/p-NiO solar cell. Considering all the optimization parameters, CH3NH3SnBr3-based perovskite solar cell exhibits the highest efficiency of 21.66% with the Voc of 0.80 V, Jsc of 31.88 mA/cm2 and Fill Factor of 84.89%. These results divulge the development of environmentally friendly methyl ammonium tin bromide perovskite solar cell.

APA, Harvard, Vancouver, ISO, and other styles

15

Mishra, Shubham, Kshitij Bhargava, and Dipankar Deb. "Numerical simulation of potential induced degradation (PID) in different thin-film solar cells using SCAPS-1D." Solar Energy 188 (August 2019): 353–60. http://dx.doi.org/10.1016/j.solener.2019.05.077.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Belarbi, F., W. Rahal, D. Rached, S. benghabrit, and M. Adnane. "A comparative study of different buffer layers for CZTS solar cell using Scaps-1D simulation program." Optik 216 (August 2020): 164743. http://dx.doi.org/10.1016/j.ijleo.2020.164743.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Mekky, Abdel-baset H. "Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell." European Physical Journal Applied Physics 87, no. 3 (2019): 30101. http://dx.doi.org/10.1051/epjap/2019190037.

Full text

Abstract:

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

APA, Harvard, Vancouver, ISO, and other styles

18

Bhavsar, K., and P. B. Lapsiwala. "Numerical simulation of perovskite solar cell with different material as electron transport layer using SCAPS-1D Software." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 3 (2021): 341–47. http://dx.doi.org/10.15407/spqeo24.03.341.

Full text

Abstract:

Perovskite solar cells have become a hot topic in the solar energy device area due to high efficiency and low cost photovoltaic technology. However, their function is limited by expensive hole transport material (HTM) and high temperature process electron transport material (ETM) layer is common device structure. Numerical simulation is a crucial technique in deeply understanding the operational mechanisms of solar cells and structure optimization for different devices. In this paper, device modelling for different perovskite solar cell has been performed for different ETM layer, namely: TiO2, ZnO, SnO2, PCBM (phenyl-C61-butyric acid methyl ester), CdZnS, C60, IGZO (indium gallium zinc oxide), WS2 and CdS and effect of band gap upon the power conversion efficiency of device as well as effect of absorber thickness have been examined. The SCAPS 1D (Solar Cell Capacitance Simulator) has been a tool used for numerical simulation of these devices.

APA, Harvard, Vancouver, ISO, and other styles

19

Kata, N., D. Diouf, A. Darga, and A. Seidou Maiga. "The effect of the recombination mechanisms location on the temperature sensitivity of thin-film photovoltaic cells." EPJ Photovoltaics 10 (2019): 8. http://dx.doi.org/10.1051/epjpv/2019008.

Full text

Abstract:

Thin film solar cells temperature sensitivity and impact of the main recombination mechanism location are investigated in this paper. The main mechanisms in bulk and at the heterojunction interface are discriminated. Using a 1D simulation software, “Solar Cell Capacitance Simulator” (SCAPS), we observed a higher temperature coefficient of open circuit voltage (Voc) for cells with main recombination centers at the interface than the one with main recombination centers in volume. Furthermore, an LTSpice module model is used to visualize the effects of the recombination centers' location on the performance ratios of the modules. The results show more degradation for the ratios performance of cells with the main recombination mechanisms at the interface than those in volume.

APA, Harvard, Vancouver, ISO, and other styles

20

Jhuma, Farjana Akter, and Mohammad Junaebur Rashid. "Simulation study to find suitable dopants of CdS buffer layer for CZTS solar cell." Journal of Theoretical and Applied Physics 14, no. 1 (2019): 75–84. http://dx.doi.org/10.1007/s40094-019-00363-3.

Full text

Abstract:

AbstractThe performance of CZTS solar cell, a promising candidate in the field of energy production from sunlight, can be improved by optimizing the parameters of most widely used CdS buffer layer. In this work, numerical study have been done on the typical CZTS solar cell structures containing Mo thin film as back contact on glass substrate using SCAPS-1D solar cell simulation software. Then, the CZTS has been used as the absorber layer followed by CdS buffer later. Following, ZnO and transparent conducting oxide n-ITO layers have been considered as window layer and front contact, respectively. In the simulations, the CdS buffer layer has been doped with three different materials such as Silver (Ag), Copper (Cu) and Chlorine (Cl) for a wide acceptable range of carrier concentration. After obtaining the suitable carrier concentration, the thickness of the doped buffer layer has been varied keeping other layer parameters constant to see the variation of performance parameters open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (η) of the CZTS solar cell.

APA, Harvard, Vancouver, ISO, and other styles

21

Mohottige, Rasika N., and Sandanuwan P. Kalawila Vithanage. "Numerical simulation of a new device architecture for CIGS-based thin-film solar cells using 1D-SCAPS simulator." Journal of Photochemistry and Photobiology A: Chemistry 407 (February 2021): 113079. http://dx.doi.org/10.1016/j.jphotochem.2020.113079.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Hussain, Syed Sajjad, Saira Riaz, Ghazi Aman Nowsherwan, et al. "Numerical Modeling and Optimization of Lead-Free Hybrid Double Perovskite Solar Cell by Using SCAPS-1D." Journal of Renewable Energy 2021 (July 16, 2021): 1–12. http://dx.doi.org/10.1155/2021/6668687.

Full text

Abstract:

The highest power conversion efficiency (PCE) for organic-inorganic perovskite solar cells based on lead is reported as 25.2% in 2019. Lead-based hybrid perovskite materials are used in several photovoltaics applications, but these are not highly favored due to the toxicity of lead and volatility of organic cations. On the other hand, hybrid lead-free double perovskite has no such harm. In this research study, SCAPS numerical simulation is utilized to evaluate and compare the results of perovskite solar cell based on double perovskite FA 2 BiCuI 6 and standard perovskite CH 3 NH 3 PbI 3 as an active layer. The results show that the power conversion efficiency obtained in the case of FA 2 BiCuI 6 is 24.98%, while in the case of CH 3 NH 3 PbI 3 , it is reported as 26.42%. This indicates that the hybrid organic-inorganic double perovskite FA 2 BiCuI 6 has the ability to replace hybrid organic-inorganic perovskite CH 3 NH 3 PbI 3 to expand next-generation lead-free harmless materials for solar cell applications.

APA, Harvard, Vancouver, ISO, and other styles

23

Niane, Djimba, Mouhamadou M. Soce, Jean Jude Domingo, Ousmane Diagne, and Moustapha Dieng. "Influence of the Thickness of a Layer of Potassium Fluoride Incorporated in the CIGS/CdS Interface on the Macroscopic Electrical Parameters of the Solar Cell." Applied Physics Research 11, no. 1 (2019): 1. http://dx.doi.org/10.5539/apr.v11n1p1.

Full text

Abstract:

In this work, the heterojunction composed of a n-type ZnO transparent conductive oxide (OTC) layer, a n-type CdS buffer layer and a absorber layer based Cu (In, Ga)Se2 p doped is studied under the influence of a KF layer placed in the CIGS/CdS interface. This study was done by varying the thickness of KF using thin-film simulation software named SCAPS-1D. The presence of KF for a doping of the CIGS absorber of 1016cm-3 improves strongly the electrical parameters that are the Vco, the Jcc the FF, the maximum power and the conversion efficiency of the solar cell Ƞ. However, a decrease of the FF and the Jcc is noticed when the thickness of the KF is greater than 30nm causing a deterioration of the performances of the cell.

APA, Harvard, Vancouver, ISO, and other styles

24

Chakraborty, Kunal, Mahua Gupta Choudhury, and Samrat Paul. "Numerical study of Cs2TiX6 (X = Br−, I−, F− and Cl−) based perovskite solar cell using SCAPS-1D device simulation." Solar Energy 194 (December 2019): 886–92. http://dx.doi.org/10.1016/j.solener.2019.11.005.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Mahammedi, Nassim Ahmed, Hamza Gueffaf, Brahim Lagoun, and Marhoun Ferhat. "Numerical simulation and optimization of a silicon clathrate-based solar cell n-Si136/p-Si2 using SCAPS-1D program." Optical Materials 107 (September 2020): 110043. http://dx.doi.org/10.1016/j.optmat.2020.110043.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Tara, Ayush, Vishal Bharti, Susheel Sharma, and Rockey Gupta. "Device simulation of FASnI3 based perovskite solar cell with Zn(O0.3, S0.7) as electron transport layer using SCAPS-1D." Optical Materials 119 (September 2021): 111362. http://dx.doi.org/10.1016/j.optmat.2021.111362.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Zyoud, Samer H., Ahed H. Zyoud, Atef Abdelkader, and Naser M. Ahmed. "Numerical Simulation for Optimization of ZnTe-Based Thin-Film Heterojunction Solar Cells with Different Metal Chalcogenide Buffer Layers Replacements: SCAPS-1D Simulation Program." International Review on Modelling and Simulations (IREMOS) 14, no. 2 (2021): 79. http://dx.doi.org/10.15866/iremos.v14i2.19954.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Hima, Abdelkader. "Enhancing of CH3NH3SnI3 based solar cell efficiency by ETL engineering." International Journal of Energetica 5, no. 1 (2020): 27. http://dx.doi.org/10.47238/ijeca.v5i1.119.

Full text

Abstract:

Solar cells based on organic-inorganic perovskites (PVK) are the subject of several researches in laboratories around the world. One of the most promising hybrid perovskite is the methylammonium lead tri-iodide MAPbI3 that is suitable for sun light harvesting. But the MAPbI3 is a toxic material, so in this paper is proposed another nature friendly candidate which is the methylammonium tin tri-iodide MASnI3. The proposed material is inserted into an n-i-p heterojunction solar cell which structure is electron transport layer (ETL)/PVK/hole transport layer (HTL). The used HTL is the PEDOT: PSS in combination with one of two ETLs which are the PCBM and the IGZO. Simulation efforts using 1D SCAPS was carried. It is found that IGZO ETL based solar cell yields a higher power conversion efficiency (PCE) compared with PCBM ETL based solar cell in the same thickness.

APA, Harvard, Vancouver, ISO, and other styles

29

Saha, R., K. Chakraborty, M. G. Choudhury, and S. Paul. "Simulation study of Formamidinium Lead Halide (FAPbX3; X = I and Br) Based Perovskite Solar Cells Using SCAPS-1D Device Simulator." Journal of Nano- and Electronic Physics 13, no. 3 (2021): 03019–1. http://dx.doi.org/10.21272/jnep.13(3).03019.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Ngoy, Kitalu Ricin, Abhay Kumar Singh, and Tien-Chien Jen. "Impact of doping concentration, thickness, and band-gap on individual layer efficiency of CIGS solar cell." Functional Materials Letters 14, no. 05 (2021): 2151022. http://dx.doi.org/10.1142/s179360472151022x.

Full text

Abstract:

An investigation with the individual layer physical property of the CIGS solar cells is a significant parameter to design and fabricate highly efficient devices. Therefore, this work demonstrates the thickness and carrier concentrations doping dependence simulations using SCAPS 1D software. The optimized CIGS solar cells different layer properties such as short-circuit current density ([Formula: see text], open-circuit voltage ([Formula: see text], Fill Factor (FF) and conversion efficiency ([Formula: see text] with varying thickness and doped concentration are presented. This optimized layer by layer simulation work would be useful to build a suitable CIGS solar cell structure. This simulation investigation showed that an optimal CIGS device structure can be fabricated possessing the configuration of a window layer ZnO : Al thickness 0.02 [Formula: see text]m, ZnO layer thickness 0.01 [Formula: see text] m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and [Formula: see text] = 10[Formula: see text] cm[Formula: see text], a CdS buffer layer thickness 0.01 [Formula: see text]m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and absorber layer CIGS in the thickness range of 1–4 [Formula: see text]m with the doping level range [Formula: see text] = 10[Formula: see text]–10[Formula: see text] cm[Formula: see text], along with the optimal CIGS energy bandgap range of 1.3–1.45 eV. According to optimized simulation results, a CIGS solar cell device can possess electric efficiency 26.61%, FF 82.96%, current density of 38.21 mA/cm2 with the open circuit voltage 0.7977 eV. Hence, these optimized simulation findings could be helpful to provide a path to design and fabricate highly efficient CIGS solar cells devices.

APA, Harvard, Vancouver, ISO, and other styles

31

Fadili, S., B. Hartiti, Z. El khalidi, A. Kotbi, A. Ridah, and P. Thevenin. "Numerical simulation of solar cells besed CZTS buffer layer (ZnO_1-XS_X) using SCAPS-1D software." Journal of Fundamental and Applied Sciences 9, no. 2 (2017): 1001. http://dx.doi.org/10.4314/jfas.v9i2.25.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

S, Aseena, Nelsa Abraham, and V. Suresh Babu. "Simulation Based Investigation on the Performance of Metal Oxides as Charge Transport Layers in Lead/Tin Perovskite Solar Cells Using SCAPS 1D." ECS Journal of Solid State Science and Technology 10, no. 7 (2021): 071012. http://dx.doi.org/10.1149/2162-8777/ac12b0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Shukla, Naman, Dharamlal Prajapati, and Sanjay Tiwari. "Investigation on Design and Device Modeling of High Performance CH3NH3PbI3-xClx Perovskite Solar Cells." Journal of Ravishankar University (PART-B) 34, no. 1 (2021): 58–63. http://dx.doi.org/10.52228/jrub.2021-34-1-8.

Full text

Abstract:

Perovskite solar cells fabricated with inexpensive and simple technology exhibits high efficiency has witnessed worldwide boom in research. The optimization of solar cell can be done through modeling and simulation. The optical and electrical modeling are the ways to optimize different parameter such as thickness, defect density, doping density and material selection for fabricating stable and highly efficient perovskite solar cells. In this research work, electrical modeling of solar cell is done throughSolar Cell Capacitance Simulator(SCAPS-1D).The architecture of the solar cell is n-i-p device structure. CH3NH3PbI3-xClx acts as light absorber active layer, TiO2 as electron transport layer and Spiro-OMeTADas hole transport layer with device structure FTO/ TiO2/ CH3NH3PbI3-xClx/ Spiro-OMeTAD/Au. The open circuit voltage Voc, short circuit current density Isc, fill factor and power conversion efficiency are 1.28 V, 21.63 mA/cm2, 0.78 and 21.53% respectively. The result showed that the optimize parameter can be applied for fabrication of the solar cell experimentally. Various metal contact materials of the anodeare also studied and analyzed.

APA, Harvard, Vancouver, ISO, and other styles

34

Ashraf, Md Ali, and Intekhab Alam. "Numerical simulation of CIGS, CISSe and CZTS-based solar cells with In2S3 as buffer layer and Au as back contact using SCAPS 1D." Engineering Research Express 2, no. 3 (2020): 035015. http://dx.doi.org/10.1088/2631-8695/abade6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Zyoud, Samer H., and Ahed H. Zyoud. "Effect of Absorber (Acceptor) and Buffer (Donor) Layers Thickness on Mo/CdTe/CdS/ITO Thin Film Solar Cell Performance: SCAPS-1D Simulation Aspect." International Review on Modelling and Simulations (IREMOS) 14, no. 1 (2021): 10. http://dx.doi.org/10.15866/iremos.v14i1.19953.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Alzoubi, Tariq, and Mohamed Moustafa. "Simulation analysis of functional MoSe2 layer for ultra-thin Cu(In,Ga)Se2 solar cells architecture." Modern Physics Letters B 34, no. 05 (2019): 2050065. http://dx.doi.org/10.1142/s0217984920500657.

Full text

Abstract:

The influence of Molybdenum diselenide transition metal dichalcogenide material (p-type MoSe2 TMDC) as an interfacial layer between the ultra-thin Cu (In, Ga)Se2 (CIGS) absorber layer, with thickness less than 500[Formula: see text]nm, and molybdenum back contact was studied using SCAPS-1D simulation package. The possible effects of the p-MoSe2 layer on the electrical properties and the photovoltaic parameters of the CIGS thin-film solar cells have been investigated. Band gap energy, carrier concentration, and the layer thickness of the p-MoSe2 were varied in this study. The optimum band gap is found to be of 1.3 eV. Interfacial layers of thicknesses less than 200 nm have been found to cause deterioration for the overall cell performance. This might be attributed to the increase in the back-contact recombination current and the reduction of the built-in potential at p-MoSe2/CIGS junction. Furthermore, the MoSe2 layer would form the so-called back surface field (BSF), due to the associated wider band gap with respect to that of CIGS absorber layer. Additionally, the simulation of the I–V characteristic showed a higher slope which implies that MoSe2 layer at the CIGS/Mo interface acts in a beneficial way on the CIGS/Mo hetero-contact adapting it from Schottky type contact to quasi-ohmic contact. The conversion efficiency has increased significantly from 14.61% to 22.08%, without and with the MoSe2 layer, respectively. These findings are very promising for future high performance and cost-effective solar cell devices.

APA, Harvard, Vancouver, ISO, and other styles

37

Najm, Asmaa Soheil, Puvaneswaran Chelvanathan, Sieh Kiong Tiong, et al. "Numerical Insights into the Influence of Electrical Properties of n-CdS Buffer Layer on the Performance of SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag Configured Thin Film Photovoltaic Devices." Coatings 11, no. 1 (2021): 52. http://dx.doi.org/10.3390/coatings11010052.

Full text

Abstract:

A CdS thin film buffer layer has been widely used as conventional n-type heterojunction partner both in established and emerging thin film photovoltaic devices. In this study, we perform numerical simulation to elucidate the influence of electrical properties of the CdS buffer layer, essentially in terms of carrier mobility and carrier concentration on the performance of SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices, by using the Solar Cell Capacitance Simulator (SCAPS-1D). A wide range of p-type absorber layers with a band gap from 0.9 to 1.7 eV and electron affinity from 3.7 to 4.7 eV have been considered in this simulation study. For an ideal absorber layer (no defect), the carrier mobility and carrier concentration of CdS buffer layer do not significantly alter the maximum attainable efficiency. Generally, it was revealed that for an absorber layer with a conduction band offset (CBO) that is more than 0.3 eV, Jsc is strongly dependent on the carrier mobility and carrier concentration of the CdS buffer layer, whereas Voc is predominantly dependent on the back contact barrier height. However, as the bulk defect density of the absorber layer is increased from 1014 to 1018 cm−3, a CdS buffer layer with higher carrier mobility and carrier concentration is an imperative requirement to a yield device with higher conversion efficiency and a larger band gap-CBO window for realization of a functional device. Most tellingly, simulation outcomes from this study reveal that electrical properties of the CdS buffer layer play a decisive role in determining the progress of emerging p-type photo-absorber layer materials, particularly during the embryonic device development stage.

APA, Harvard, Vancouver, ISO, and other styles

38

Alipour, Hossein, and Abbas Ghadimi. "Optimization of lead-free perovskite solar cells in normal-structure with WO3 and water-free PEDOT: PSS composite for hole transport layer by SCAPS-1D simulation." Optical Materials 120 (October 2021): 111432. http://dx.doi.org/10.1016/j.optmat.2021.111432.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Esman, A. K., G. L. Zykov, V. A. Potachits, and V. K. Kuleshov. "Simulation of Thin-Film Solar Cells with a CuInSe2 Chalcopyrite Structure." ENERGETIKA. Proceedings of CIS higher education institutions and power engineering associations 63, no. 1 (2020): 5–13. http://dx.doi.org/10.21122/1029-7448-2020-63-1-5-13.

Full text

Abstract:

By using numerical simulation, the operating temperatures of a thin-film solar cell based on CuInSe2 have been determined and the solar radiation density values, at which stabilization of the temperature operating conditions of the thin-film solar cell is not required, have been optimized. The maximum possible efficiency value of ~14.8 % is achieved under actual operating conditions, and is maintained by the incoming thermal energy as both emitted in this cell and infrared radiation of the sun and the environment. A model of the proposed thin-film solar cell was implemented in the COMSOL Multiphysics program environment with the use of the Heat Transfer Module. The operating temperatures of the solar cell without thermal stabilization under conditions of the diurnal and seasonal variations of both the ambient temperature and the power density of the AM1.5 solar spectrum have been determined. The maximum value of this power density was varied from 1.0 to 500 kW/m2 when using concentrators. The obtained values of operating temperatures of the thin-film solar cell were used to determine its main parameters in the SCAPS-1D program. The graphs of the operating temperature, efficiency and fill factor of the thin-film solar cell versus the solar radiation density are provided. It is shown that in order to obtain the highest possible efficiency of a solar cell, it is necessary to use concentrated solar radiation with a power density, the maximum value of which should be 8 kW/m2 in July and 10 kW/m2 in January. In the case of lower and higher values of power density, an appropriate thermal stabilization of the cell under consideration is necessary. The dependencies of efficiency, fill factor and open-circuit voltage versus the stabilization temperature of the solar cell, temperature gradients at the interfaces of the thermoelectric layer were also calculated. It is shown that by choosing optimal values of the thermal stabilization, the efficiency of the proposed solar cell may be about 15 % or more.

APA, Harvard, Vancouver, ISO, and other styles

40

Shahriar, Ahnaf, Saif Hasnath, and Md Aminul Islam. "Effects of Operating Temperature on the Performance of c-Si, a-Si:H, CIGS, and CdTe/CdS Based Solar Cells." EDU Journal of Computer and Electrical Engineering 1, no. 1 (2020): 31–37. http://dx.doi.org/10.46603/ejcee.v1i1.21.

Full text

Abstract:

Solar photovoltaic technology is one of the most promising, economical and green technologies to harvest energy with the least effect on the environment. Crystalline silicon (c-Si), amorphous silicon (a-Si), CIGS, CdTe/CdS etc., are dominating the PV market. Operating temperature plays an important role in the performance of solar cells. A comparative investigation on the effect of operating temperature on the market available solar cells is very important in choosing the better PV technology in high-temperature applications. In this study, the performances of different solar cell technologies, namely crystalline silicon (c-Si), amorphous silicon (a-Si), CIGS, and CdTe/CdS based solar cells, have been investigated under different operating temperature by using SCAPS-1D simulation software. All parameter of a solar cell for different technology has been studied under the varying operation temperature ranging from 25 ºC to 70 ºC and the rate of change of them has been recorded. It has been found that the Voc and Pmax degrade significantly and Isc increases slightly with an increase in temperature. The temperature coefficients of Pmax for c-Si, a-Si, CdTe and CIGS have been found as -0.0724/K, -0.0362/K, -0.0112/K and -0.0663/K, respectively. On the other hand, c-Si and CIGS technologies show better quantum efficiency behaviour in both room and high operating temperatures.

APA, Harvard, Vancouver, ISO, and other styles

41

Abega, F. X. Abomo, A. Teyou Ngoupo, and J. M. B. Ndjaka. "Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell." International Journal of Photoenergy 2021 (August 14, 2021): 1–13. http://dx.doi.org/10.1155/2021/7506837.

Full text

Abstract:

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13 cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95 mA · c m − 2 , V OC = 0.973 V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

APA, Harvard, Vancouver, ISO, and other styles

42

Kim, Kihwan, Jihye Gwak, Seung Kyu Ahn, et al. "Simulations of chalcopyrite/c-Si tandem cells using SCAPS-1D." Solar Energy 145 (March 2017): 52–58. http://dx.doi.org/10.1016/j.solener.2017.01.031.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Husainat, Ali, Warsame Ali, Penrose Cofie, John Attia, and John Fuller. "Simulation and Analysis of Methylammonium Lead Iodide (CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>) Perovskite Solar Cell with Au Contact Using SCAPS 1D Simulator." American Journal of Optics and Photonics 7, no. 2 (2019): 33. http://dx.doi.org/10.11648/j.ajop.20190702.12.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Liyanage, Geethika K., Adam B. Phillips, Fadhil K. Alfadhili, and Michael J. Heben. "Numerical Modelling of Front Contact Alignment for High Efficiency Cd1-xZnxTe and Cd1-xMgxTe Solar Cells for Tandem Devices." MRS Advances 3, no. 52 (2018): 3121–28. http://dx.doi.org/10.1557/adv.2018.501.

Full text

Abstract:

AbstractWide bandgap Cd1-xZnxTe (CZT) and Cd1-xMgxTe (CMT) have drawn attention as top cells in tandem devices. These materials allow tuning of the band gap over a wide range by controlling the Zn or Mg concentration with little alteration to the base CdTe properties. Historically, CdS has been used as a heterojunction partner for CZT or CMT devices. However, these devices show a significant lower open circuit voltage (VOC) than expected for wide bandgap absorbers. Recent modelling work suggests that poor band alignment between the CdS emitter and absorber results in a high concentration of holes at the interface, which increased recombination and limits the VOC. This recombination should be exacerbated for wider bandgap absorbers such as CZT and CMT. In this study, we use numerical simulations with SCAPS-1D software to investigate the band alignment in the front contacts for wider bandgap CdTe based absorbers. Results show that by replacing the CdS with a wide bandgap emitter layer, the VOC can be greatly improved, though under certain conditions, the fill factor remains sensitive to the location of the emitter conduction band. As a result, different transparent front contacts were also investigated to determine a device structure required to produce a high performance CZT or CMT top-cell for tandems devices.

APA, Harvard, Vancouver, ISO, and other styles

45

Moiz, Syed Abdul, and Ahmed N. M. Alahmadi. "Design of Dopant and Lead-Free Novel Perovskite Solar Cell for 16.85% Efficiency." Polymers 13, no. 13 (2021): 2110. http://dx.doi.org/10.3390/polym13132110.

Full text

Abstract:

Halide based perovskite offers numerous advantages such as high-efficiency, low-cost, and simple fabrication for flexible solar cells. However, long-term stability as well as environmentally green lead-free applications are the real challenges for their commercialization. Generally, the best reported perovskite solar cells are composed of toxic lead (Pb) and unstable polymer as the absorber and electron/hole-transport layer, respectively. Therefore, in this study, we proposed and simulated the photovoltaic responses of lead-free absorber such as cesium titanium (IV) bromide, Cs2TiBr6 with dopant free electron phenyl-C61-butyric acid methyl ester (PCBM), and dopant free hole transport layer N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) for the Ag/BCP/PCBM/Cs2TiBr6/NPB/ITO based perovskite solar cell. After comprehensive optimization of each layer through vigorous simulations with the help of software SCAPS 1D, it is observed that the proposed solar cell can yield maximum power-conversion efficiency up to 16.85%. This efficiency is slightly better than the previously reported power-conversion efficiency of a similar type of perovskite solar cell. We believe that the outcome of this study will not only improve our knowledge, but also triggers further investigation for the dopant and lead-free perovskite solar cell.

APA, Harvard, Vancouver, ISO, and other styles

46

Kang, Aniseh Kafi, M. Hossein Zandi, and Nima E. Gorji. "Simulation analysis of graphene contacted perovskite solar cells using SCAPS-1D." Optical and Quantum Electronics 51, no. 4 (2019). http://dx.doi.org/10.1007/s11082-019-1802-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

"Modeling and Simulation of Lead-Free Perovskite Solar Cell Using SCAPS-1D." 2, no. 2 (2021). http://dx.doi.org/10.26565/2312-4334-2021-2-12.

Full text

Abstract:

In this work, the effect of some parameters on tin-based perovskite (CH3NH3SnI3) solar cell were studied through device simulation with respect to adjusting the doping concentration of the perovskite absorption layer, its thickness and the electron affinities of the electron transport medium and hole transport medium, as well as the defect density of the perovskite absorption layer and hole mobility of hole transport material (HTM). A device simulator; the one-dimensional Solar Cells Capacitance Simulator (SCAPS‑1D) program was used for simulating the tin-based perovskite solar cells. The current-voltage (J-V) characteristic curve obtained by simulating the device without optimization shows output cell parameters which include; open circuit voltage (Voc) = 0.64V, short circuit current density (Isc) = 28.50mA/, fill factor (FF) = 61.10%, and power conversion efficiency (PCE) = 11.30% under AM1.5 simulated sunlight of 100mW/cm2 at 300K. After optimization, values of the doping concentration, defect density, electron affinity of electron transport material and hole transport material were determined to be: 1.0x1016cm-3, 1.0x1015cm-3, 3.7 eV and 2.3 eV respectively. Appreciable values of solar cell parameters were obtained with Jsc of 31.38 mA/cm2, Voc of 0.84 V, FF of 76.94% and PCE of 20.35%. when compared with the initial device without optimization, it shows improvement of ~1.10 times in Jsc, ~1.80 times in PCE, ~1.31 times in Voc and ~1.26 time in FF. The results show that the lead-free CH3NH3SnI3 perovskite solar cell which is environmentally friendly is a potential solar cell with high theoretical efficiency of 20.35%.

APA, Harvard, Vancouver, ISO, and other styles

48

Bello, I. T., Y. A. Odedunmoye, O. Adedokun, H. A. Shittu, and A. O. Awodugba. "Numerical Simulation of Sandwiched Perovskite-Based Solar Cell Using Solar Cell Capacitance Simulator (SCAPS-1D)." Journal of the Nigerian Society of Physical Sciences, October 25, 2019, 57–61. http://dx.doi.org/10.46481/jnsps.2019.11.

Full text

Abstract:

Due to the superb characteristics of its light-harvesting, the Perovskite sensitizer ABX3 (A = CH3NH3, B = Pb, Sn, and X = Cl, Br, I) has recently attracted great attention. Perovskite is composed of inexpensive and earth abundant materials. It is processable at low temperature preferably via the printing techniques. In addition, the charges in the bulk material after light absorption that enhances low loss in energy charge generation and collection were generated freely. In this research work, Solar cell capacitance simulator (SCAPS-1D) was used to harnessing the real device hybrid Perovskite (PSC) solar cell with material parameters obtained from literatures and experiment used in the definition panel and the arrangement of an hybrid (FTO/ZnO/CZTS/PSCS/CZTS/HTM) model in the SCAPS-1D simulator. From the simulated results obtained the Band gap diagram and other curves were constructed. The efficiency greater than twenty percent (>20%) was achieved, which shows that having a combination of two different absorbers were achievable and calling for great attention from the researchers.

APA, Harvard, Vancouver, ISO, and other styles

49

Rondan-Gómez, Viridiana, F. Ayala-Mató, D. Seuret-Jiménez, et al. "New architecture in dye sensitized solar cells: a SCAPS-1D simulation study." Optical and Quantum Electronics 52, no. 6 (2020). http://dx.doi.org/10.1007/s11082-020-02437-y.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Mohandes, Aminreza, Mahmood Moradi, and Hamid Nadgaran. "Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D." Optical and Quantum Electronics 53, no. 6 (2021). http://dx.doi.org/10.1007/s11082-021-02959-z.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!