Relevant bibliographies by topics / Simulation SENTAURUS-TCAD

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Simulation SENTAURUS-TCAD'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Simulation SENTAURUS-TCAD"

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Dargar, Shashi Kant, J. K. Srivastava, Santosh Bharti, and Abha Nyati. "Performance Evaluation of GaN based Thin Film Transistor using TCAD Simulation." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 1 (2017): 144. http://dx.doi.org/10.11591/ijece.v7i1.pp144-151.

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<p>As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10<sup>7 &l
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Kuznetsov, Maksim, Sergey Kalinin, Alexey Cherkaev, and Dmitriy Ostertak. "Investigating physical model interface in the TCAD Sentaurus environment." Transaction of Scientific Papers of the Novosibirsk State Technical University, no. 3 (November 18, 2020): 39–48. http://dx.doi.org/10.17212/2307-6879-2020-3-39-48.

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Currently, the application SDevice software package TCAD Sentaurus is a reliable tool for electrophysical simulation of silicon CMOS transistors operating in the temperature range of -60 °C – +125 °C. To adapt the modeling process to specific physical conditions of the devices, application SDevice has an extensive library of models of electrophysical parameters, in particular models of mobility or band gap energy. However, when the device operates under extreme cryogenic conditions, there is a need to rework these models using a special Physical Model Interface (PMI). The paper presents method
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Jiang, Yi Fan, B. Jayant Baliga, and Alex Q. Huang. "Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design." Materials Science Forum 924 (June 2018): 361–64. http://dx.doi.org/10.4028/www.scientific.net/msf.924.361.

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This paper presents the analysis of Aluminum profile implanted into 4H-SiC with low background doping concentration. A strong lateral straggling effect was discovered with secondary electron potential contrast (SEPC) method, and analyzed by Sentaurus Monto Carlo simulations. The effect of lateral straggling was included in the edge termination design using Sentaurus TCAD simulation tool, and the results are compared with design not including the lateral straggling effect. The effect of interface charge on the electric field distribution and breakdown voltage of different 10 kV device edge term
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Johannesson, Daniel, Muhammad Nawaz, and Hans Peter Nee. "TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors." Materials Science Forum 963 (July 2019): 670–73. http://dx.doi.org/10.4028/www.scientific.net/msf.963.670.

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In this project, a Technology CAD (TCAD) model has been calibrated and verified against experimental data of a 15 kV silicon carbide (SiC) bipolar junction transistor (BJT). The device structure of the high voltage BJT has been implemented in the Synopsys Sentaurus TCAD simulation platform and design of experiment simulations have been performed to extract and fine-tune device parameters and 4H-SiC material parameters to accurately reflect the 15 kV SiC BJT experimental results. The set of calibrated TCAD parameters may serve as a base for further investigations of various SiC device design an
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Boufouss, E., J. Alvarado, and D. Flandre. "Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (2010): 000077–82. http://dx.doi.org/10.4071/hitec-eboufouss-ta25.

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A temperature dependence analysis of the single event transient current induced by heavy ions irradiation is performed in the range of 300K to 500K on a 1μm SOI CMOS MOSFET standard 6T-SRAM cell. The Sentaurus TCAD mixed-mode numerical simulation showed a significant impact of the temperature on the current induced by the radiation and as a result, an increase of the 6T-SRAM sensitivity upon radiation. A SOI MOSFET compact model introduced in SPICE as a Verilog-A module reproducing the single event effects was developed. This model shows a very good agreement with the TCAD simulations results
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Phetchakul, Toempong, Wittaya Luanatikomkul, Chana Leepattarapongpan, E. Chaowicharat, Putapon Pengpad, and Amporn Poyai. "The Study of p-n and Schottky Junction for Magnetodiode." Advanced Materials Research 378-379 (October 2011): 663–67. http://dx.doi.org/10.4028/www.scientific.net/amr.378-379.663.

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This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
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Palomo, F. R., P. Fernández-Martínez, J. M. Mogollón, et al. "Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 23, no. 4-5 (2010): 379–99. http://dx.doi.org/10.1002/jnm.736.

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Salemi, Arash, Benedetto Buono, Anders Hallén, et al. "Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC." Materials Science Forum 778-780 (February 2014): 836–40. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.836.

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10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 μs. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a VFof 3.3 V at 100 A/cm2at 25°C, which was decreased to 3.0 V at 300°C.
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Zhu, Shunwei, Hujun Jia, Tao Li, et al. "Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer." Micromachines 10, no. 7 (2019): 444. http://dx.doi.org/10.3390/mi10070444.

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A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdo
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Jaikumar, M. G., and Shreepad Karmalkar. "Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs." Materials Science Forum 717-720 (May 2012): 1101–4. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1101.

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4H-Silicon Carbide VDMOSFET is simulated using the Sentaurus TCAD package of Synopsys. The simulator is calibrated against measured data for a wide range of bias conditions and temperature. Material parameters of 4H-SiC are taken from literature and used in the available silicon models of the simulator. The empirical parameters are adjusted to get a good fit between the simulated curves and measured data. The simulation incorporates the bias and temperature dependence of important physical mechanisms like interface trap density, coulombic interface trap scattering, surface roughness scattering
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Dissertations / Theses on the topic "Simulation SENTAURUS-TCAD"

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Bui, Thi Thanh Huyen. "Terminaisons verticales de jonction remplies avec des couches diélectriques isolantes pour des application haute tension utilisant des composants grand-gap de forte puissance." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI061/document.

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Le développement de l’énergie renouvelable loin des zones urbaines demande le transport d'une grande quantité d’énergie sur de longues distances. Le transport d’électricité en courant continu haute tension (HVDC) présente beaucoup d’avantages par rapport à celui en courant alternatif. Dans ce contexte il est nécessaire de développer des convertisseurs de puissance constitués par des composants électroniques très haute tension, 10 à 30 kV. Si les composants en silicium ne peuvent pas atteindre ces objectifs, le carbure de silicium (SiC) se positionne comme un matériau semiconducteur alternatif
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Legal, Julie. "Intégration des fonctions de protection avec les dispositifs IGBT." Phd thesis, Université Paul Sabatier - Toulouse III, 2010. http://tel.archives-ouvertes.fr/tel-00564270.

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La fiabilité et la disponibilité des systèmes de gestion de l'énergie sont les conditions de base pour la généralisation de solutions électriques dans de nombreuses applications. Les dispositifs de puissance doivent être performants non seulement en régime normal, mais aussi en régimes extrêmes, par exemple lors des courts-circuits. Pour cela, les interrupteurs de puissance sont associés de façon discrète à des systèmes de détection et de protection. Une solution pour améliorer la fiabilité des dispositifs consiste à intégrer monolithiquement, au sein d'une même puce, l'interrupteur et les fon
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Baccar, El Boubkari Fedia. "Évaluation des mécanismes de défaillance et de la fiabilité d’une nouvelle terminaison haute tension : approche expérimentale et modélisation associée." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0266/document.

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Ces travaux s’intègrent dans le projet de recherche SUPERSWITCH dans lequel des solutions alternatives à l’IGBT, utilisées dans les convertisseurs de puissance dans la gamme des tenues en tension 600-1200 V, sont envisagées. Les nouvelles structures du transistor MOS basées sur le principe de Super-Jonction tel que le transistor DT-SJMOSFET et sa terminaison originale, la « Deep Trench Termination » se propose comme alternative aux IGBT. Dans ce contexte, cette thèse se focalise sur la caractérisation de la robustesse de la terminaison DT2 adapté à une diode plane. Après avoir effectué un état
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Book chapters on the topic "Simulation SENTAURUS-TCAD"

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Wu, Yung-Chun, and Yi-Ruei Jhan. "Introduction of Synopsys Sentaurus TCAD Simulation." In 3D TCAD Simulation for CMOS Nanoeletronic Devices. Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3066-6_1.

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"Simulation of JLFETS Using Sentaurus TCAD." In Junctionless Field-Effect Transistors. Wiley, 2019. http://dx.doi.org/10.1002/9781119523543.ch9.

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Conference papers on the topic "Simulation SENTAURUS-TCAD"

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Wozny, Janusz, Jacek Podgorski, Ewa Raj, and Zbigniew Lisik. "Good Practices of Electrothermal Simulation of p-n Structures Using Sentaurus TCAD." In 2019 IEEE 15th International Conference on the Experience of Designing and Application of CAD Systems (CADSM). IEEE, 2019. http://dx.doi.org/10.1109/cadsm.2019.8779329.

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Trinh, Cham Thi, Amran Al-Ashouri, Lars Korte, et al. "Electrical and optical simulation of perovskite/silicon tandem solar cells using Tcad-Sentaurus." In 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). IEEE, 2021. http://dx.doi.org/10.1109/pvsc43889.2021.9519104.

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Li, Yonghong, Chaohui He, and Chunmei Xia. "Simulation of Heavy Ion Source-Drain Penetration Effect in SOI MOS and Bulk MOS." In 18th International Conference on Nuclear Engineering. ASMEDC, 2010. http://dx.doi.org/10.1115/icone18-29782.

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The Single Event Effects (SEE) of Silicon On Insulator (SOI) and bulk-silicon NMOS are simulated using the SENTAURUS-TCAD device simulator. The Source-Drain Penetration Effect, which is caused by a heavy ion, was shown. It is proved that when the feature size of device become less than a certain scale, both Direct Channel Effect and Indirect Channel Effect occur. By comparing the distributions of equipotential lines in the MOSFETs’ channels of the different feature size devices during the ion strikes indirectly, the Source-Drain-Penetration Effect occurs more evidently when the device feature
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Ануфриев, Владимир, Vladimir Anufriev, Антон Козлов, and Anton Kozlov. "INVESTIGATION OF THE INTEGRAL MAGNETO SENSITIVITY HALL SENSOR WITH PN JUNCTIONS BY THE SENTAURUS TCAD NUMERICAL MODELING." In CAD/EDA/Simulation in Modern Electronics. Bryansk State Technical University, 2018. http://dx.doi.org/10.30987/conferencearticle_5c19e5de650781.53271413.

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Baccar, F., H. Arbess, L. Theolier, S. Azzopardi, and E. Woirgard. "New simulation method for Deep Trench Termination diode (DT2) using mixed-mode TCAD sentaurus." In 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2015. http://dx.doi.org/10.1109/eurosime.2015.7103122.

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Kara, Dogacan, and F. Nazli Donmezer Akgun. "Electrothermal Analysis of the Field-Plated AlGaN/GaN HEMTs With SiO2 Passivation." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74125.

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AlGaN/GaN high electron mobility transistors (HEMTs) are widely used in high frequency and power applications of the space and military industries due to their high RF power densities. When operated in full capacity, reliability of GaN HEMTs drop significantly due to device degradation, electron collapse phenomena, and concentrated heating effects. Although significant research has been done to investigate the effects of passivation, field-plates on the device degradation and the electron collapse separately, combined electrothermal analysis of the field-plates and the SiO2 passivation on GaN
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