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Journal articles on the topic 'Simulation spice'

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Published: 4 June 2021
Last updated: 1 February 2022

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1

Rashid, Muhammad H. "Control Systems Simulation by Spice." IFAC Proceedings Volumes 25, no. 8 (June 1992): 633–37. http://dx.doi.org/10.1016/s1474-6670(17)54119-1.

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2

Neifeld, Mark A., and Wu-Chun Chou. "spice-based optoelectronic system simulation." Applied Optics 37, no. 26 (September 10, 1998): 6093. http://dx.doi.org/10.1364/ao.37.006093.

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3

Vladimirescu, A., and J. J. Chariot. "MOS analogue circuit simulation with SPICE." IEE Proceedings - Circuits, Devices and Systems 141, no. 4 (1994): 265. http://dx.doi.org/10.1049/ip-cds:19941247.

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4

Wedding, B. "Spice simulation of laser diode modules." Electronics Letters 23, no. 8 (1987): 383. http://dx.doi.org/10.1049/el:19870280.

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5

Ahmer, Mohd, Abdul Sajid, and M. Yusuf Yasin. "SPICE Simulation of Memristor Series and Parallel." SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology 9, no. 02 (December 25, 2017): 89–92. http://dx.doi.org/10.18090/samriddhi.v9i02.10867.

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Memory Resistors also known as Memristors, is a nonlinear resistor with memory. It is the fourth basic circuit element except resistor, capacitor and an inductor. The capability of memorizing its resistance makes its useful for designing of non volatile memory and in neural networks. This paper aims at study of Memristors characteristics. We first analyze and model the characteristics of Memristor with HSPICE and then study its behavior for series and parallel combination.
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6

Balaji, Uma. "Simulation Models of Energy Cables in SPICE." International Journal of Power Electronics and Drive Systems (IJPEDS) 9, no. 2 (June 1, 2018): 744. http://dx.doi.org/10.11591/ijpeds.v9.i2.pp744-749.

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Accurate modeling of cables is important to study the behavior of high frequency disturbances in power converter systems. This paper reviews and compares two popular methodologies to model energy cables – an improved per unit length parameters based model and a Laplace SPICE element based model. The two models presented take into account the frequency dependence of the parameters of the cable. A ladder network is used for this purpose in the per unit length based model. The Laplace SPICE element model is generated from from a rational function approximation for the admittance parameters that are frequency dependant. The rational function approximation is obtained using a well known vector fitting algorithm. The time and frequency domain solutions of a two wire energy cable, obtained from the two models, agree well.
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7

CRUIZIAT, P., and Randy THOMAS. "SPICE - a circuit simulation program for physiologists." Agronomie 8, no. 7 (1988): 613–23. http://dx.doi.org/10.1051/agro:19880706.

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8

Nichols, K. G., T. J. Kazmierski, M. Zwolinski, and A. D. Brown. "Overview of SPICE-like circuit simulation algorithms." IEE Proceedings - Circuits, Devices and Systems 141, no. 4 (1994): 242. http://dx.doi.org/10.1049/ip-cds:19941246.

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9

Veeraraghavan, S., J. G. Fossum, and W. R. Eisenstadt. "SPICE Simulation of SOI MOSFET Integrated Circuits." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 5, no. 4 (October 1986): 653–58. http://dx.doi.org/10.1109/tcad.1986.1270235.

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10

Vasilescu, Gabriel, and Luonan Chen. "Spice simulation of intracellular transport: Free diffusion." Asian Journal of Control 13, no. 5 (May 23, 2011): 738–48. http://dx.doi.org/10.1002/asjc.384.

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11

Lee, Y. S., M. H. L. Chow, and J. S. L. Wong. "SPICE simulation of nonlinear equations and circuits." IEE Proceedings G Circuits, Devices and Systems 138, no. 2 (1991): 273. http://dx.doi.org/10.1049/ip-g-2.1991.0048.

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12

Kumar, K. B. "Negative inductors and capacitors for SPICE simulation." IEEE Circuits and Devices Magazine 6, no. 6 (November 1990): 11. http://dx.doi.org/10.1109/101.100252.

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13

Zeltser, Ilya, and Shmuel Ben-Yaakov. "On SPICE Simulation of Voltage-Dependent Capacitors." IEEE Transactions on Power Electronics 33, no. 5 (May 2018): 3703–10. http://dx.doi.org/10.1109/tpel.2017.2766025.

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14

Poltz, Juliusz. "Optimizing VLSI interconnect model for SPICE simulation." Analog Integrated Circuits and Signal Processing 5, no. 1 (January 1994): 87–94. http://dx.doi.org/10.1007/bf01673909.

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15

HOWARD, GERARD DAVID, LARRY BULL, BEN DE LACY COSTELLO, ANDREW ADAMATZKY, and VICTOR EROKHIN. "A SPICE MODEL OF THE PEO-PANI MEMRISTOR." International Journal of Bifurcation and Chaos 23, no. 06 (June 2013): 1350112. http://dx.doi.org/10.1142/s0218127413501125.

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The memristor is a novel circuit element which is capable of maintaining an activity-dependent nonvolatile resistance and is therefore a candidate for use in next-generation storage and logic circuits. In this article, we present a model of the PEO-PANI memristor for use in the SPICE circuit simulation program which is especially suited to analog logic applications. Two variants are presented herein; accompanying each is a short description that explains any design decisions made, as well as elucidating on preferred simulation settings. It is shown that the model accurately replicates corresponding experimental results found in the literature. Simple simulations are used to show the suitability of each variant to specific experimental usage. Appendices contain verbatim implementations of the SPICE models.
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16

Li, Bo, and Guoyong Shi. "A Native SPICE Implementation of Memristor Models for Simulation of Neuromorphic Analog Signal Processing Circuits." ACM Transactions on Design Automation of Electronic Systems 27, no. 1 (January 31, 2022): 1–24. http://dx.doi.org/10.1145/3474364.

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Since the memristor emerged as a programmable analog storage device, it has stimulated research on the design of analog/mixed-signal circuits with the memristor as the enabler of in-memory computation. Due to the difficulty in evaluating the circuit-level nonidealities of both memristors and CMOS devices, SPICE-accuracy simulation tools are necessary for perfecting the art of neuromorphic analog/mixed-signal circuit design. This article is dedicated to a native SPICE implementation of the memristor device models published in the open literature and develops case studies of applying such a circuit simulation with MOSFET models to study how device-level imperfections can make adversarial effects on the analog circuits that implement neuromorphic analog signal processing. Methods on memristor stamping in the framework of modified nodal analysis formulation are presented, and implementation results are reported. Furthermore, functional simulations on neuromorphic signal processing circuits including memristors and CMOS devices are carried out to validate the effectiveness of the native SPICE implementation of memristor models from the perspectives of simulation accuracy, efficiency, and convergence for large-scale simulation tasks.
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17

Abebe, H., V. Tyree, H. Morris, and P. T. Vernier. "SPICE BSIM3 Model Parameter Extraction and Optimisation: Practical Considerations." International Journal of Electrical Engineering & Education 44, no. 3 (July 2007): 249–62. http://dx.doi.org/10.7227/ijeee.44.3.5.

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This tutorial paper discusses the SPICE BSIM3v3.1 model parameter extraction and optimisation strategies that show consistency and very good accuracy in circuit simulation, less than 10% error, for practical IC design application in deep submicron processes. This paper describes an approach to BSIM3v3.1 model parameter extraction that mitigates or eliminates many of the unstable circuit behaviours observed during SPICE simulations with BSIM3v3. We present here a strategy applicable to 0.18 micron CMOS technology, in which the accuracy of the final extracted model parameters is evaluated by comparing simulations of inverter gain and a 31-stage ring oscillator with measured data.
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18

Andrejević Stošović,, Miona, Marko Dimitrijević, Duško Lukač, and Vančo Litovski. "SPICE Modeling and Simulation of a MPPT Algorithm." Electronics ETF 18, no. 1 (June 23, 2014): 11. http://dx.doi.org/10.7251/els1418011a.

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19

Chen, Bing, Gang Lu, and Yuehai Wang. "SPICE Engine Analysis and Circuit Simulation Application Development." TELKOMNIKA (Telecommunication Computing Electronics and Control) 14, no. 1 (March 1, 2016): 64. http://dx.doi.org/10.12928/telkomnika.v14i1.2832.

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20

Bhattacharyya, A. B., S. Tuli, and S. Majurndar. "SPICE simulation of surface acoustic wave interdigital transducers." IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 42, no. 4 (July 1995): 784–86. http://dx.doi.org/10.1109/58.393122.

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21

Vu Dinh, T., B. Cabon, and J. Chilo. "SPICE simulation of lossy and coupled interconnection lines." IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B 17, no. 2 (May 1994): 134–46. http://dx.doi.org/10.1109/96.330437.

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22

Statz, H., P. Newman, I. W. Smith, R. A. Pucel, and H. A. Haus. "GaAs FET device and circuit simulation in SPICE." IEEE Transactions on Electron Devices 34, no. 2 (February 1987): 160–69. http://dx.doi.org/10.1109/t-ed.1987.22902.

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23

Xiaopeng Li and M. Ismail. "Fast simulation of sigma-delta modulators using SPICE." IEEE Circuits and Devices Magazine 15, no. 1 (1999): 7–9. http://dx.doi.org/10.1109/101.747561.

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24

WEI, CHAO-GANG, TIAN-LING REN, JUN ZHU, and LI-TIAN LIU. "A Ferroelectric Capacitor Mathematical Model for Spice Simulation." Integrated Ferroelectrics 64, no. 1 (January 2004): 101–11. http://dx.doi.org/10.1080/10584580490893691.

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25

Korobkov, Alexander, Amit Agarwal, and Subramanian Venkateswaran. "Efficient FinFET Device Model Implementation for SPICE Simulation." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 34, no. 10 (October 2015): 1696–99. http://dx.doi.org/10.1109/tcad.2015.2424956.

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26

Xu, J., and J. Yu. "Equivalent circuit models of switches for SPICE simulation." Electronics Letters 24, no. 7 (1988): 437. http://dx.doi.org/10.1049/el:19880296.

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27

Yeung, Albert T., and Anwar S. Akhtar. "Simulation of Electrical Conduction in Geomaterials by SPICE." Pure and Applied Geophysics 165, no. 5 (May 2008): 923–45. http://dx.doi.org/10.1007/s00024-008-0337-5.

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28

Abdelhamid, Hamdy, Ahmed Edris, Amr Helmy, and Yehea Ismail. "Fast and accurate PV model for SPICE simulation." Journal of Computational Electronics 18, no. 1 (October 30, 2018): 260–70. http://dx.doi.org/10.1007/s10825-018-1266-x.

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29

Tsukii, Tomoyuki, Kenji Nakamura, and Osamu Ichinokura. "SPICE simulation of SRM considering nonlinear magnetization characteristics." Electrical Engineering in Japan 142, no. 1 (October 23, 2002): 50–56. http://dx.doi.org/10.1002/eej.10092.

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30

Canova, Aldo, Giambattista Gruosso, and Michele Quercio. "Characterization of Electromagnetic Device by Means of Spice Models." International Journal of Emerging Technology and Advanced Engineering 11, no. 9 (September 20, 2021): 12–22. http://dx.doi.org/10.46338/ijetae0921_02.

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— In this paper, the lumped parameter circuital approach devoted to the simulation of massive, conductive, and ferromagnetic cores including eddy currents and nonlinearity is presented. In the first part of the paper, the circuit analogies devoted to the simulation of magnetic structure coupled with external electrical and eventually mechanical equations are summarised. The two techniques are known in the literature as reluctance-resistance and permeancecapacitance analogies. In particular, it is put in evidence the exploitation of the gyrator component in the modelling of the coupling among magnetic and electrical quantities. The originality of this paper consists in demonstrating for the first time that the rotator-capacitor approach is very suitable for simulations in spice environment and the solution is validated on real applications. Following the circuital approach, the effect of the conductivity and nonlinear magnetic behaviour of the magnetic branches is formalized and introduced in the model. The simulation of the conductivity behaviour, which introduces in massive cores significant eddy current effects, is modelled according to the two possible analogies: the reluctance and the permeance-capacitor model. Under sinusoidal steady-state behaviour, energy aspects related to the two models are then presented and discussed. The nonlinearity is taken into account through the fixed-point technique which is suitable for a lumped circuit representation. The full circuital approach is then adopted for the simulation of the real electromechanical actuator under transient and sinusoidal steady-state behaviour conditions. The simulated result is then compared with numerical finite element and experimental result
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31

Kato, Yaso, and Hiroshi Sakuta. "Affinity of Voltage-Method Intra-Body Communication and SPICE Simulation." Journal of The Japan Institute of Electronics Packaging 17, no. 3 (2014): 224–29. http://dx.doi.org/10.5104/jiep.17.224.

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32

Thierry-Jebali, Nicolas, Thibault Kempf, and Fabien Mandorlo. "Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4H-SiC Interdigitated Devices." Materials Science Forum 858 (May 2016): 757–60. http://dx.doi.org/10.4028/www.scientific.net/msf.858.757.

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This paper assesses the 2.5D simulation method for limiting the electrodes debiasing of interdigitated devices. This method uses both spice and finite element method simulations where a resistance grid models the electrodes and a 2D finite elements structure models the device. A lateral 4H-SiC PiN diode has been selected for this study. In order to assess this method, 2.5D simulation method has been compared to 3D simulations.
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33

Soffke, O., P. Zipf, M. Velten, and M. Glesner. "Simulation von CNFET basierten Digitalschaltungen." Advances in Radio Science 4 (September 6, 2006): 307–11. http://dx.doi.org/10.5194/ars-4-307-2006.

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Abstract. Einwandige Kohlenstoff Nanoröhrchen können sowohl halbleitende als auch metallische Eigenschaften aufweisen, je nachdem wie die Röhrchenachse im Vergleich zur Anordnung der Kohlenstoffatome verläuft. Dies wird durch den sogenannten Aufrollvektor bestimmt. Halbleitende Nanoröhrchen können für Transistoren (CNFETs) verwendet werden, deren Verhalten sich mit einer modifizierten Version von Berkeley Spice 3f5 simulieren läßt. Die aus diesen Simulationen gewonnenen Parameter werden zur Parametrisierung von SystemC Modellen aus CNFETs bestehender Grundschaltungen verwendet, was zu einer um Größenordnungen höheren Simulationsgeschwindigkeit bei hoher Genauigkeit führt. Single walled carbon nanotubes (CNT) can be either metallic or semiconducting depending on the tube's orientation in relation to the configuration of the carbon atoms. This is determined by the so-called chiral vector. Semiconducting CNT can be used in transistors (CNFET) which can be simulated by a modified version of Berkeley Spice 3f5. The parameters determined by these simulations are used to parameterise SystemC models of some basic building blocks yielding fast simulations with high accuracy.
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34

Bhattacharjee, Abhiroop, Thanh Chien Nguyen, Vivek Pachauri, Sven Ingebrandt, and Xuan Thang Vu. "Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing." Micromachines 12, no. 1 (December 31, 2020): 39. http://dx.doi.org/10.3390/mi12010039.

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Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem of the classical potentiometric readout. We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE) for SiNW-FETs to perform impedimetric measurements through SPICE simulations and quantitatively evaluate influences of various device parameters to the transfer function of the devices. Furthermore, we investigated how biomolecule binding to the surface of SiNW-FETs is influencing the impedance spectra. Based on mathematical analysis and simulation results, we proposed methods that could improve the impedimetric readout of SiNW-FET biosensors and make it more explicable.
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35

Goyal, R. "Simulation and Modeling-implementing GaAs device models with SPICE." IEEE Circuits and Devices Magazine 8, no. 2 (March 1992): 9–13. http://dx.doi.org/10.1109/101.127307.

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36

Brambilla, A., and D. D'Amore. "The simulation errors introduced by the SPICE transient analysis." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 40, no. 1 (1993): 57–60. http://dx.doi.org/10.1109/81.215346.

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37

McDonald, R. J., and J. G. Fossum. "High-voltage device modeling for SPICE simulation of HVIC's." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 7, no. 3 (March 1988): 425–32. http://dx.doi.org/10.1109/43.3176.

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38

Li, X., J. Qin, B. Huang, X. Zhang, and J. B. Bernstein. "SRAM Circuit-Failure Modeling and Reliability Simulation With SPICE." IEEE Transactions on Device and Materials Reliability 6, no. 2 (June 2006): 235–46. http://dx.doi.org/10.1109/tdmr.2006.876568.

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39

Madec, Morgan, Christophe Lallement, and Jacques Haiech. "Modeling and simulation of biological systems using SPICE language." PLOS ONE 12, no. 8 (August 7, 2017): e0182385. http://dx.doi.org/10.1371/journal.pone.0182385.

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40

Chang, K. J., N. H. Chang, S. Y. Oh, and K. Lee. "Parameterized SPICE subcircuits for multilevel interconnect modeling and simulation." IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 39, no. 11 (1992): 779–89. http://dx.doi.org/10.1109/82.204126.

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41

Ravezzi, L., G. F. Dalla Betta, D. Stoppa, and A. Simoni. "A versatile photodiode SPICE model for optical microsystem simulation." Microelectronics Journal 31, no. 4 (April 2000): 277–82. http://dx.doi.org/10.1016/s0026-2692(99)00145-7.

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42

Sharma, Manoj, and Arti Noor. "A methodology for automated analysis of SPICE simulation data." International Journal of Circuits and Architecture Design 1, no. 4 (2015): 309. http://dx.doi.org/10.1504/ijcad.2015.072607.

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43

Sushko, I. O., Ye V. Vistyzenko, A. V. Movchanyuk, R. V. Antypenko, and A. V. Serha. "Geophone Equivalent Circuit for Simulation Tasks in SPICE Packages." Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia, no. 77 (June 30, 2019): 53–59. http://dx.doi.org/10.20535/radap.2019.77.53-59.

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44

Yadav, Archana, and Gaurav Bhardwaj. "Comparison of MOSFET Characteristic Using Spice and MATLAB Simulation." International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering 03, no. 11 (November 20, 2014): 12894–900. http://dx.doi.org/10.15662/ijareeie.2014.0311015.

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45

Lee, D., and O. A. Palusinski. "Modification of 'SPICE' for simulation of coupled packaging interconnections." IEEE Transactions on Components, Hybrids, and Manufacturing Technology 15, no. 4 (1992): 491–96. http://dx.doi.org/10.1109/33.159878.

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46

Regnier, J., and B. Wilamowski. "SPICE simulation and analysis through Internet and Intranet networks." IEEE Circuits and Devices Magazine 14, no. 3 (May 1998): 9–12. http://dx.doi.org/10.1109/101.678949.

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47

Chandel, Rajeevan, and Ashwani Kumar Chandel. "SPICE for Nano-regime VLSI Design - A Simulation Study." IETE Journal of Education 48, no. 3-4 (July 2007): 103–14. http://dx.doi.org/10.1080/09747338.2007.11657875.

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48

Engelhard, Guy, Jonathan L. Feng, Iftah Galon, David Sanford, and Felix Yu. "SPICE: Simulation Package for Including Flavor in Collider Events." Computer Physics Communications 181, no. 1 (January 2010): 213–26. http://dx.doi.org/10.1016/j.cpc.2009.09.013.

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49

Roux, Paul le, Coenrad Fourie, Sasan Razmkhah, and Pascal Febvre. "Accurate Small Signal Simulation of Superconductor Interconnects in SPICE." IEEE Transactions on Applied Superconductivity 31, no. 5 (August 2021): 1–6. http://dx.doi.org/10.1109/tasc.2021.3071638.

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50

Beal, Aubrey N., and Robert N. Dean. "Using SPICE to Model Nonlinearities Resulting from Heterogeneous Integration of Complex Systems." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000274–79. http://dx.doi.org/10.4071/isom-2017-wa44_134.

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Abstract Complex systems have been modeled using SPICE. This modeling allows extension of the linear models of Si MEMS into the nonlinear regime. Previously, such analysis involved many different simulation tools. These SPICE simulation methods allow for modeling nonlinear devices alongside their supporting electronics in one simulator. Nonlinear spring constants have been modeled using SPICE and it is shown that bifurcation occurs due to large amplitude excitation. This results in nonlinear and even chaotic oscillations similar to those found in the Duffing oscillator.
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