Relevant bibliographies by topics / Simulation under atlas/ silvaco

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  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Simulation under atlas/ silvaco'

Author: Grafiati
Published: 4 June 2025
Last updated: 23 June 2025

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Journal articles on the topic "Simulation under atlas/ silvaco"

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Akansha, Ephraim* Neelesh Agrawal Anil Kumar A.K. Jaiswal. "STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET." Global Journal of Engineering Science and Research Management 4, no. 8 (2017): 20–25. https://doi.org/10.5281/zenodo.841194.

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In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics were examined using Silvaco Atlas.
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A. Z. Djennati, S. Kerai, and M. Khaouani. "HTL material variation of Graphene/ITO/TiO2/MAPbI3/spiro-OMeTAD solar cells under high temperature effect." International Journal of Nanoelectronics and Materials (IJNeaM) 17, no. 3 (2024): 446–51. http://dx.doi.org/10.58915/ijneam.v17i3.1167.

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Perovskite-based solar cells have recently gained attention as a potentially viable option to replace conventional photovoltaic technologies, offering high efficiency and low cost. In this work, we present a numerical simulation of ITO/TiO2/MAPbI3/OMeTAD solar cell under Silvaco TCAD Tools; the devices exhibit a high efficiency of 27.42 %, 0.3 A/W spectral response at 580 nm optical wavelength. The device is studied under different parameter variations such as: HLT material variation (spiro-OMeTAD, Silicon,PEDOT:PSS and carbon fiber), doping effect of the Sprio layer on IV curves and performance under temperature variation (25-300 ͦC). Overall, this study highlights the potential of perovskite materials in the development of photovoltaic technologies and the accuracy of Silvaco-Atlas in predicting their performance and efficiency
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Nadjat, Benadla, and Ghaffour Kheireddine. "Optimizing the performance of photovoltaic cells IBC (interdigitated back contact) by numerical simulation." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 6 (2019): 4566–72. https://doi.org/10.11591/ijece.v9i6.pp4566-4572.

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Solar energy is the most widely shared and abundant source all over the world. This kind of energy is exploited to produce electricity directly by the solar photovoltaic cell. Indeed, siliconphotovoltaic cells are the most widely spread technology. In the present article, we reported a numerical simulation of the interdigitated back contact (IBC) solar cell in order to obtain a higher conversion efficiency. The structure was realized on a p-type multi-crystalline silicon substrate, a p+ type amorphous silicon FSF, an n- type amorphous silicon based emitter, and a p- type BSF. The position of the emitter and the BSF were interdigitated and covered with ohmic contacts. The numerical simulation was carried out by SILVACO software under the Atlas module. The surface of structure was of a value of 10 cm2 under illumination AM1.5g. We studied the effect of the geometrical and the physical parameters of the structure with IBC on the performance of the cell. The optimum obtained conversion efficiency was 20.83%; this result confirms the potential of the heterojunction silicon technology.
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Tobbeche, S., and M. N. Kateb. "Two-Dimensional Modelling and Simulation of Crystalline Silicon n+pp+ Solar Cell." Applied Mechanics and Materials 260-261 (December 2012): 154–62. http://dx.doi.org/10.4028/www.scientific.net/amm.260-261.154.

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In this work, we present the simulation results of the technological parameters and the electrical characteristics of a crystalline silicon n+pp+ solar cell, using two-dimension (2D) software, namely TCAD Silvaco (Technology Computer Aided Design). TCAD Silvaco Athena is used to simulate various stages of the technology manufacturing, while TCAD Silvaco Atlas is used for the simulation of the electrical characteristics and the spectral response of the solar cell. The J-V characteristics and the external quantum efficiency (EQE) are simulated under AM 1.5 illumination. The conversion efficiency(η)of 16.06% is reached and the other characteristic parameters are simulated: the open circuit voltage (Voc) is of 0.63 V, the short circuit current density (Jsc) equals 30.54 mA/cm² and the form factor (FF) is of 0.83 for the n+pp+ solar cell with a silicon nitride antireflection layer (Si3N4). In order to highlight the importance of the back surface field (BSF), a comparison between two cells, one without BSF (structure n+p), the other with one BSF (structure n+pp+), was made. By creating a BSF on the rear face of the cell the short circuit current density increases from 28.55 to 30.54 mA/cm2, the open circuit voltage from 0.6 to 0.63 V and the conversion efficiency from 14.19 to 16.06%. A clear improvement of the spectral response is obtained in wavelengths ranging from 0.65 to 1.1 µm for the solar cell with BSF.
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Xu, Hui Fang, Guo Wei Cui, Yong Li, Wen Yang Sun, Kui Xia, and Chao He. "Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET." Japanese Journal of Applied Physics 63, no. 3 (2024): 034001. http://dx.doi.org/10.35848/1347-4065/ad27a2.

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Abstract A two-dimensional (2D) analytical model considering the effects of the gate oxide region, channel region, and buried oxide region for a non-lightly doped drain (LDD) SOI MOSFET is proposed. The top and bottom surface potential distributions have been derived on the basis of solving 2D Poisson’s equation and using an evanescent mode analysis. The potential distribution, threshold voltage, and threshold voltage roll-off have been verified by Silvaco ATLAS simulated results for the proposed device with different device parameters. The model agrees well with the simulation results under the above-mentioned conditions. Therefore, the analytical model provides the basic designing guidance for non-LDD SOI MOSFETs.
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Chawla, Rashmi, Poonam Singhal, and Amit Kumar Garg. "Design and Analysis of Multi Junction Solar Photovoltaic Cell with Graphene as an Intermediate Layer." Journal of Nanoscience and Nanotechnology 20, no. 6 (2020): 3693–702. http://dx.doi.org/10.1166/jnn.2020.17512.

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An efficacious Intermediate Layer (IML) is important for multi junction solar Photo Voltaic Cell (PVC) owing to its good electrical conductivity and optical transparency. In this research work, the use of Graphene as an IML with varied thickness on InGaP/GaAs/InGaAs multi-junction solar PVCs is investigated using virtual fabrication TCAD tool SILVACO-Atlas. The detail absorption rate from wavelength 300 nm (ultraviolet)-2500 nm (middle infra-red region) is determined and the effected modelling stages are recounted. The results after simulation are further confirmed with experimental data to prove accuracy of the research work proposed. The performance parameters with Jsc = 33.4 mA/cm2, Voc = 1.27 V, fill factor (FF) = 99.5% and conversion efficiency of 30.91% (1 sun) are obtained under AM1.5G illumination.
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Sara, Bechlaghem, Zebentout Baya, and Benamara Zineb. "Investigation of Cu(In, Ga)Se2 solar cell performance with non-cadmium buffer layer using TCAD-SILVACO." Materials Science-Poland 36, no. 3 (2018): 514–19. http://dx.doi.org/10.2478/msp-2018-0054.

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AbstractThe purpose of this work is to achieve the best efficiency of Cu(In, Ga)Se2 solar cells by replacing the CdS buffer layer with other nontoxic materials. The simulation tool used in this study is Silvaco-Atlas package based on digital resolution 2D transport equations governing the conduction mechanisms in semiconductor devices. The J-V characteristics are simulated under AM1.5G illumination. Firstly, we will report the modeling and simulation results of CdS/CIGS solar cell, in comparison with the previously reported experimental results [1]. Secondly, the photovoltaic parameters will be calculated with CdS buffer layer and without any buffer layer to understand its impact on the output parameters of solar cells. The simulation is carried out with the use of electrical and optical parameters chosen judiciously for different buffers (CdS, ZnOS and ZnSe). In comparison to simulated CdS/CIGS, the best photovoltaic parameters have been obtained with ZnOS buffer layer. The structure has almost the same open circuit voltage Voc and fill factor FF, and higher short circuit current density Jsc, which results in slightly higher conversion efficiencies.
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Manoua, Mohamed, Tariq Jannane, Otmane Abouelala, et al. "Modeling and optimization of n-ZnO/p-Si heterojunction using 2-dimensional numerical simulation." European Physical Journal Applied Physics 90, no. 1 (2020): 10101. http://dx.doi.org/10.1051/epjap/2020190333.

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In this work, n-ZnO/p-Si heterojunction was investigated using two-dimensional numerical simulation. The effect of Zinc Oxide thickness, carrier concentration in Zinc Oxide layer, minority carrier lifetime of bulk Silicon and the interface states density on electrical properties were studied in dark and under illumination conditions. This study aimed to optimize these parameters in order to obtain n-ZnO/p-Si solar cell with high conversion efficiency and low cost. The simulation was carried out by Atlas silvaco software. As results, a very low saturation current Is, low series resistance Rs, an ideality factor n between 1 and 1.5 were obtained for optimal charge carrier concentrations in the range [5 × 1019–5 × 1021 cm−3] and a thickness of Zinc Oxide between 0.6 and 2 µm. Moreover, a photovoltaic conversion efficiency of 24.75% was achieved without interfacial defect, which decreases to 5.49% for an interface defect density of 5 × 1014 cm−2.
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Benadla, Nadjat, and Kheireddine Ghaffour. "Optimizing the performance of photovoltaic cells IBC (contact back interdigitated) by numerical simulation." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 6 (2019): 4566. http://dx.doi.org/10.11591/ijece.v9i6.pp4566-4572.

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<p>Solar energy is the most widely shared and abundant source all over the world. This kind of energy is exploited to produce electricity directly by the solar photovoltaic cell. Indeed, silicon photovoltaic cells are the most widely spread technology. In the present article, we reported a numerical simulation of the interdigitated back contact (IBC) solar cell in order to obtain a higher conversion efficiency. The structure was realized on a p-type multi-crystalline silicon substrate, a p+ type amorphous silicon FSF, an n- type amorphous silicon based emitter, and a p- type BSF. The position of the emitter and the BSF were interdigitated and covered with ohmic contacts. The numerical simulation was carried out by SILVACO software under the Atlas module. The surface of structure was of a value of 10 cm<sup>2</sup> under illumination AM1.5g. We studied the effect of the geometrical and the physical parameters of the structure with IBC on the performance of the cell. The optimum obtained conversion efficiency was 20.83%; this result confirms the potential of the heterojunction silicon technology.</p>
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Kharchich, Fatima Zahra, and Abdellatif Khamlichi. "Simulation and performance optimization of GaAs/GaSb tandem solar cell." MATEC Web of Conferences 371 (2022): 02003. http://dx.doi.org/10.1051/matecconf/202237102003.

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Multi-junction solar cells provide the highest efficiencies. Intense research activity is being held with the aim to increase the actual performance reached by these cells. Harvesting most of the solar spectrum and finding the optimum design variables in terms of structural parameters and carrier concentrations are the main topics being investigated by solar developers. The GaAs/GaSb based dualjunction solar cell was found suitable for the best absorption of solar spectrum. In this work, an optimization approach was applied to fix the optimal parameters of the top base layer of this structure that provide the maximum efficiency. To achieve this, a series of numerical simulations were carried out by means of Silvaco ATLAS software under standard AM1.5G spectrum where thicknesses and doping levels of the top base layer were varied. The obtained optimal structure yields a power conversion efficiency of 41.65% with open circuit voltage of 1.78 V, short circuit current of 35.72 mA / cm2 and fill factor of 90.16%. The performance of the GaAs/GaSb dual-junction solar cell was further improved by using sunlight concentration. A conversion power efficiency of 45.78% at 60sun light concentration was attained. It was found also that above this level of concentration ratio the detriment effect of shunt resistance dominates.
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Dissertations / Theses on the topic "Simulation under atlas/ silvaco"

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Garcia, Baldomero. "Indium gallium nitride multijunction solar cell simulation using silvaco atlas." Thesis, Monterey, Calif. : Naval Postgraduate School, 2007. http://bosun.nps.edu/uhtbin/hyperion-image.exe/07Jun%5FGarcia.pdf.

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Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, June 2007.<br>Thesis Advisor(s): Sherif Michael. "June 2007." Includes bibliographical references (p. 91-94). Also available in print.
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Fotis, Konstantinos. "Modeling and simulation of a dual-junction CIGS solar cell using Silvaco ATLAS." Thesis, Monterey, California. Naval Postgraduate School, 2012. http://hdl.handle.net/10945/27831.

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The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell, using a CIGS bottom cell and different thin-film designs as a top cell, was conducted in order to increase the current record efficiency of 20.3% for a single CIGS cell. This was accomplished through modeling and simulation using Silvaco ATLASTM, an advanced virtual wafer-fabrication tool. A Silvaco ATLASTM model of a single CIGS cell was created by utilizing actual solar cell parameters (such as layer thicknesses, gallium ratio, doping levels and materials properties) documented in different papers, and work from previous NPS theses provided the background for modeling with Silvaco ATLASTM. After the individual CIGS solar cells were built, a dual-junction cell was created by adding the layers of another CIGS solar cell whose parameters (layers thicknesses, Ga ratio) were varied to produce an optimum efficiency of 24%. This approach is promising to produce a multi-junction CIGS cell with record efficiency.
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"Simulation of GaN CAVETs in Silvaco Atlas." Master's thesis, 2019. http://hdl.handle.net/2286/R.I.53600.

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abstract: Gallium Nitride (GaN) based Current Aperture Vertical Electron Transistors (CAVETs) present many appealing qualities for applications in high power, high frequency devices. The wide bandgap, high carrier velocity of GaN make it ideal for withstanding high electric fields and supporting large currents. The vertical topology of the CAVET allows for more efficient die area utilization, breakdown scaling with the height of the device, and burying high electric fields in the bulk where they will not charge interface states that can lead to current collapse at higher frequency. Though GaN CAVETs are promising new devices, they are expensive to develop due to new or exotic materials and processing steps. As a result, the accurate simulation of GaN CAVETs has become critical to the development of new devices. Using Silvaco Atlas 5.24.1.R, best practices were developed for GaN CAVET simulation by recreating the structure and results of the pGaN insulated gate CAVET presented in chapter 3 of [8]. From the results it was concluded that the best simulation setup for transfer characteristics, output characteristics, and breakdown included the following. For methods, the use of Gummel, Block, Newton, and Trap. For models, SRH, Fermi, Auger, and impact selb. For mobility, the use of GANSAT and manually specified saturation velocity and mobility (based on doping concentration). Additionally, parametric sweeps showed that, of those tested, critical CAVET parameters included channel mobility (and thus doping), channel thickness, Current Blocking Layer (CBL) doping, gate overlap, and aperture width in rectangular devices or diameter in cylindrical devices.<br>Dissertation/Thesis<br>Masters Thesis Electrical Engineering 2019
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"Cost-Effective Integrated Wireless Monitoring of Wafer Cleanliness Using SOI Technology." Master's thesis, 2010. http://hdl.handle.net/2286/R.I.8800.

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abstract: The thesis focuses on cost-efficient integration of the electro-chemical residue sensor (ECRS), a novel sensor developed for the in situ and real-time measurement of the residual impurities left on the wafer surface and in the fine structures of patterned wafers during typical rinse processes, and wireless transponder circuitry that is based on RFID technology. The proposed technology uses only the NMOS FD-SOI transistors with amorphous silicon as active material with silicon nitride as a gate dielectric. The proposed transistor was simulated under the SILVACO ATLAS Simulation Framework. A parametric study was performed to study the impact of different gate lengths (6 &mu;m to 56 &mu;m), electron motilities (0.1 cm2/Vs to 1 cm2/Vs), gate dielectric (SiO2 and SiNx) and active materials (a-Si and poly-Si) specifications. Level-1 models, that are accurate enough to acquire insight into the circuit behavior and perform preliminary design, were successfully constructed by analyzing drain current and gate to node capacitance characteristics against drain to source and gate to source voltages. Using the model corresponding to SiNx as gate dielectric, a-Si:H as active material with electron mobility equal to 0.4 cm2/V-sec, an operational amplifier was designed and was tested in unity gain configuration at modest load-frequency specifications.<br>Dissertation/Thesis<br>M.S. Electrical Engineering 2010
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Books on the topic "Simulation under atlas/ silvaco"

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Bayne, Stephen, and Bejoy Pushpakaran. Modeling and Electrothermal Simulation of SiC Power Devices: Using Silvaco© ATLAS. World Scientific Publishing Co Pte Ltd, 2019.

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Book chapters on the topic "Simulation under atlas/ silvaco"

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Sarkar, Angsuman. "Device Simulation Using Silvaco ATLAS Tool." In Technology Computer Aided Design. CRC Press, 2013. http://dx.doi.org/10.1201/b14860-6.

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"Introduction to Silvaco© ATLAS TCAD Software." In Modeling and Electrothermal Simulation of SiC Power Devices. WORLD SCIENTIFIC, 2019. http://dx.doi.org/10.1142/9789813237834_0003.

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Singh, Ashish Kumar, and Satyabrata Jit. "InAs Raised Buried Oxide SOI-TFET with N-type Si1-xGex Pocket for Low-Power Applications." In Nanoelectronic Devices and Applications. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815238242124010012.

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In this chapter, we studied the device-level performance based on electrostatic parameters of a source pocket engineered raised buried oxide (RBOX) SOI tunnel field-effect transistor (SP-RBOX-SOITFET). Using Si1-xGex pockets between the channel and the source, steep subthreshold swing transistors can be obtained. In the pocket, a narrow n+ region is formed by a tunneling junction between the p+ region of the source. In order to reduce subthreshold swing, the tunneling width must be narrowed, and the lateral electric field must be increased. So, the studied structure can be used to design the dielectric modulated biomolecule biosensors for IOTs applications. Simulation analyses of the proposed work has been conducted using the Silvaco ATLAS TCAD tool.
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Anusha, Kadiyam, and Arun Dev Dhar Dwivedi. "Comparative Study of DNTT-Based Low-Voltage BGBC, BGTC, TGBC and TGTC Configurations of OTFTs." In Organic Electronics - From Fundamentals to Applications [Working Title]. IntechOpen, 2024. http://dx.doi.org/10.5772/intechopen.1006308.

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In this chapter, we present the numerical simulation and performance analysis of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)-based OTFTs by solving fundamental semiconductor equations using finite element method. This work offers a device simulation-based comparative study of low-voltage dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) based on BGBC, BGTC, TGBC, and TGTC configurations of organic thin film transistors (OTFTs). Technology Computer Aided Design (TCAD) has been performed using ATLAS device simulator from Silvaco Inc. by taking into account the density of defects states (DOS) and field-dependent mobility model. A number of electrical metrics, including mobility, threshold voltage, current on-off ratio, transconductance, and subthreshold slope, have been extracted from experimental data as well as from the data obtained from the TCAD simulation of the device's I-V characteristics. For the bottom gate top contact (BGTC) configuration of DNTT-based OTFT, TCAD simulation results are found to be in good agreement with the experimental results reported by others. Additionally, we have retrieved the device performance parameters by running TCAD simulations for the top gate top contact (TGTC), bottom gate bottom contact (BGBC), and top gate bottom contact (TGBC) configurations of the OTFTs. Electrical performance parameters of all four configurations of the OTFTs have been compared and tabulated.
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Conference papers on the topic "Simulation under atlas/ silvaco"

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Pushpakaran, Bejoy N., Stephen B. Bayne, and Aderinto A. Ogunniyi. "Physics based electro-thermal transient simulation of 4H-SiC JBS diode using Silvaco ATLAS." In 2015 IEEE Pulsed Power Conference (PPC). IEEE, 2015. http://dx.doi.org/10.1109/ppc.2015.7296926.

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Pushpakaran, B., S. Bayne, and A. Ogunniyi. "Silvaco-Based Electrothermal Simulation of 10 kV 4H-SiC P-I-N Diode Under Pulsed Condition." In 2017 IEEE 21st International Conference on Pulsed Power (PPC). IEEE, 2017. http://dx.doi.org/10.1109/ppc.2017.8291214.

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Saha, Upoma, Fahmi Imteaz, Oishi Prova Saleque, Md Mehedi Hassan Shohag, and Bishwajit Debnath. "Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation." In 2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT). IEEE, 2015. http://dx.doi.org/10.1109/iceeict.2015.7307345.

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Tsutagawa, Michael H., and Sherif Michael. "Triple junction InGaP/GaAS/Ge solar cell optimization: The design parameters for a 36.2% efficient space cell using Silvaco ATLAS modeling & simulation." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411544.

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Lindqvist, Sebastian, Kim Wallin, Dominique Moinereau, et al. "Advanced Structural Integrity Assessment Tools for Safe Long Term Operation (ATLAS+)." In ASME 2018 Pressure Vessels and Piping Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/pvp2018-84554.

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The main objective and mission of the ATLAS+ project is to develop advanced structural assessment tools to address the remaining technology gaps for the safe and long term operation of nuclear reactor pressure coolant boundary systems. This is achieved by development and validation of: • innovative quantitative methodologies to transfer laboratory material properties to assess the structural integrity of large components, • enhanced treatment of weld residual stresses when subjected to long term operation, • advanced simulation tools based on fracture mechanics methods using physically based mechanistic models, • improved engineering methods to assess components under long term operation taking into account specific operational demands, • integrated probabilistic assessment methods to reveal uncertainties and justify safety margins. Additionally, the objective is to disseminate the findings of the work through special training sessions and links to the NUGENIA association. The project scope of work focuses on piping systems of the reactor coolant pressure boundary components (RCPB) excluding the reactor pressure vessel (RPV). The project is aimed on an experimental proof of concept and validates the developed methodology both at the laboratory scale and the full scale level. The ATLAS+ project contains 4 main technical work packages and one training and dissemination package. These are summarised here.
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Lindqvist, Sebastian, Anna Dahl, Mike Smith, et al. "Advanced Structural Integrity Assessment Tools for Safe Long Term Operation (ATLAS+)." In ASME 2022 Pressure Vessels & Piping Conference. American Society of Mechanical Engineers, 2022. http://dx.doi.org/10.1115/pvp2022-80693.

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Abstract The main objective and mission of the ATLAS+ project is to develop advanced structural assessment tools to address the remaining technology gaps for the safe and long-term operation of nuclear reactor pressure coolant boundary systems. This is achieved by development and validation of: • innovative quantitative methodologies to transfer laboratory material properties to assess the structural integrity of large components, • enhanced treatment of weld residual stresses when subjected to long term operation, advanced simulation tools based on fracture mechanics methods using physically based mechanistic models, • improved engineering methods to assess components under long term operation taking into account specific operational demands, • integrated probabilistic assessment methods to reveal uncertainties and justify safety margins. Additionally, the objective is to disseminate the findings of the work through special training sessions and links to the NUGENIA association. The project scope of work focuses on piping systems of the reactor coolant pressure boundary components (RCPB) excluding the reactor pressure vessel (RPV). The project is aimed on an experimental proof of concept and validates the developed methodology both at the laboratory scale and the full-scale level. The ATLAS+ project contains 4 main technical WPs and one training and dissemination package. These are summarized next, in addition to a brief description of the progress.
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Dotson, Kirk W., Brian H. Sako, and Daniel R. Morgenthaler. "Interaction of Liquid Propellant and Coupled System Structure for Atlas V Launch Vehicle." In ASME 2010 3rd Joint US-European Fluids Engineering Summer Meeting collocated with 8th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2010. http://dx.doi.org/10.1115/fedsm-icnmm2010-30072.

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In structural modeling of launch vehicles, liquid propellant is sometimes rigidly attached to feedline walls. This assumption precludes the interaction of structural modes with propellant pressure and flow. An analysis of fluid-structure interaction (FSI) for the Atlas V launch vehicle revealed that structural models with rigidly-attached propellant yield unconservative response predictions under some conditions. In particular, during the maximum acceleration time of flight, pressure oscillations acting at bends in the Atlas V liquid oxygen (LO2) feedline excite 15–20 Hz structural modes that have considerable gain on the feedline and at the spacecraft interface. The investigation also revealed that the venting of gas from the pogo accumulator is an excitation source and changes the dynamic characteristics of the hydraulic system. The FSI simulation produced during the investigation can be adapted to mission-specific conditions, such that responses and loads are conservatively predicted for any Atlas V flight.
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Cho, Seok, Ki-Yong Choi, Hyun-Sik Park, et al. "Integral Effect Test for a Inadvertent Opening of POSRV Using the ATLAS Facility." In 18th International Conference on Nuclear Engineering. ASMEDC, 2010. http://dx.doi.org/10.1115/icone18-29817.

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A thermal-hydraulic integral effect test facility for advanced pressurized reactors (PWRs), ATLAS (Advanced Thermal-hydraulic Test Loop for Accident Simulation), has been operated by KAERI (Korea Atomic Energy Research Institute). The reference plant of the ATLAS is a 1400 MWe-class evolutionary pressurized water reactor (PWR), the APR1400 (Advanced Power Reactor 1,400 MWe), which was developed by the Korean industry. The ATLAS has a 1/2 reduced height and a 1/288 volume scaled integral test facility with respect to the APR1400. It has a maximum power capacity of 10% of the scaled nominal core power, and it can simulate full pressure and temperature conditions of the APR1400. The ATLAS could be used to provide experimental data on design-basis accidents including the reflood phase of a large break loss of coolant accident (LBLOCA), small break LOCA (SBLOCA) scenarios including the DVI line and cold leg breaks, a steam generator tube rupture, a main steam line break, a feed line break, etc. An inadvertent opening of POSRV test (SB-POSRV-02) was carried out as one of the SBLOCA spectra. The main objectives of this experimental test were not only to provide physical insight into the system response of the APR1400 reactor during a transient situation but also to present integral effect data for the validation of the SPACE (Safety and Performance Analysis Computer Code), which is now under development by the Korean nuclear industry.
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Kirsta, Yu B., A. V. Puzanov, T. A. Rozhdestvenskaya, and M. P. Peleneva. "Long-term forecast of heavy metals content in wheat grain under changing climate conditions." In Spatial Data Processing for Monitoring of Natural and Anthropogenic Processes 2021. Crossref, 2021. http://dx.doi.org/10.25743/sdm.2021.58.67.055.

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Using the system approach, we have developed a simulation model for the long-term forecast of the content of toxic chemical elements in grain crop yield. The study was carried out by the example of wheat cultivated in Altai Krai — one of the main grain-producing regions of Russia. Wheat crops were sampled in 10 municipal districts of Altai Krai, which characterize seven different edaphic-climatic zones. The average long-term values of mean monthly air temperature and monthly precipitation for each sampling area were identified using GIS and data of the Interactive Agricultural Ecological Atlas of Russia and Neighboring Countries. A total of 19 chemical elements were considered, i.e. Pb, As, Cd, Hg, Na, Mn, Zn, Cu, Fe, Co, etc. It is shown that content of Pb, Na, Mn and Cu in wheat depend on climatic characteristics of the cultivation area. Regression dependences of element content on the average long-term air temperature and precipitation were established. Based on normalization and spatial generalization of air temperature and precipitation providing the uniform dynamics of their relative monthly values (in percent) throughout the study area, a forecast of their changes was made for 2030. A procedure for grain sampling, GIS technologies for processing meteorological and cartographic data, methods for predicting regional climate changes and establishment of quantitative relationships of chemical elements content in grain with climatic characteristics – all together make up the integral predictive simulation model for toxic substance content in grain crop yield. The model was used for estimation of Pb, Na, Mn, Cu changes in wheat by 2030. The lead (Pb) content in wheat crop delivered to elevators from certain municipal districts will exceed the maximum allowable concentration for breadgrain after 2030. Unlike Pb, Na, Mn, Cu, the content of other metals in wheat grain weakly correlate with long-term changes in air temperature and precipitation; therefore, it can hardly change significantly.
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10

Basini, Virginie, Sander de Groot, Pierre Guillermier, et al. "High-Temperature Reactor Fuel Technology in the RAPHAEL European Project." In Fourth International Topical Meeting on High Temperature Reactor Technology. ASMEDC, 2008. http://dx.doi.org/10.1115/htr2008-58123.

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Within the scope of the 5th EURATOM Framework Programme (FP) for the HTR-F and HTR-F1 projects, a new 4-year integrated project on very high temperature reactors (RAPHAEL: ReActor for Process Heat And Electricity) was started in April 2006 as part of the 6th Framework Programme. The Sub-Project on Fuel Technology (SP-FT) is one of eight sub-projects constituting the RAPHAEL project. R&amp;D conducted in this sub-project focuses on understanding fuel behaviour, determining the limits of state-of-the-art fuel, and developing potential performance improvements. Fabrication processes were worked out for alternative fuel kernel composition (UCO instead of UO2) and coating (ZrC instead of SiC): i) UCO microstructure reduces fission product migration and is thus considered superior to UO2 under high burn-ups and high temperature gradients. For this reason, the manufacturing feasibility of UCO kernels using modified external sol-gel routes was addressed. The calcining and sintering steps were particularly studied. ii) For its better high temperature performance, ZrC is a candidate coating material for replacing SiC in TRISO (TRistructural ISOtropic) particles. One of the objectives was therefore to deposit a stoichiometric ZrC layer without impurities. An “analytical irradiation” experiment currently performed in the HFR — named PYCASSO for PYrocarbon irradiation for Creep And Swelling/Shrinkage of Objects — was set up to measure the changes in coating material properties as a function of neutron fluence, with samples coming from the new fabrication process. This experiment was started in April 2008 and will provide data on particle component behaviour under irradiation. This data is required to upgrade material models implemented in the ATLAS fuel simulation code. The PYCASSO irradiation experiment is a true Generation IV VHTR effort, with Korean and Japanese samples included in the irradiation. Further RAPHAEL results will be made available to the GIF VHTR Fuel and Fuel Cycle project partners in the future. Post-irradiation examinations and heat-up tests performed on fuel irradiated in an earlier project are being performed to investigate the behaviour of state-of-the-art fuel in VHTR normal and accident conditions. Very interesting results from destructive examinations performed on the HFR-EU1bis pebbles were obtained, showing a clear temperature (and high burn-up) influence on both kernel changes (including fission product behaviour) and the coating layers. Based on fuel particle models established earlier, the fuel modelling capabilities could be further improved: i) Modelling of fuel elements containing thousands of particles is expected to enable a statistical approach to mechanical particle behaviour and fission product release. ii) A database on historical and new fuel properties was built to enable validation of models. This paper reports on recent progress and main results of the RAPHAEL sub-project on fuel technology.
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