Journal articles: 'Simulation under atlas/ silvaco'

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Akansha, Ephraim* Neelesh Agrawal Anil Kumar A.K. Jaiswal. "STUDY OF ELECTRICAL CHARACTERISTIC OF NEW P-TYPE TRENCHED UMOSFET." Global Journal of Engineering Science and Research Management 4, no. 8 (2017): 20–25. https://doi.org/10.5281/zenodo.841194.

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In this paper p-type trenched UMOSFET was designed without super junction and constructed like any other conventional MOSFET. Characteristic curve was studied between drain current verses drain voltage and drain current verses gate voltage. The trench was designed under TCAD simulation tool Silvaco software using etching process. The specific channel length of the p-type UMOSFET has been concentrated as 0.9 microns. The device structures are designed using Silvaco Athena and characteristics were examined using Silvaco Atlas.

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A. Z. Djennati, S. Kerai, and M. Khaouani. "HTL material variation of Graphene/ITO/TiO2/MAPbI3/spiro-OMeTAD solar cells under high temperature effect." International Journal of Nanoelectronics and Materials (IJNeaM) 17, no. 3 (2024): 446–51. http://dx.doi.org/10.58915/ijneam.v17i3.1167.

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Perovskite-based solar cells have recently gained attention as a potentially viable option to replace conventional photovoltaic technologies, offering high efficiency and low cost. In this work, we present a numerical simulation of ITO/TiO2/MAPbI3/OMeTAD solar cell under Silvaco TCAD Tools; the devices exhibit a high efficiency of 27.42 %, 0.3 A/W spectral response at 580 nm optical wavelength. The device is studied under different parameter variations such as: HLT material variation (spiro-OMeTAD, Silicon,PEDOT:PSS and carbon fiber), doping effect of the Sprio layer on IV curves and performance under temperature variation (25-300 ͦC). Overall, this study highlights the potential of perovskite materials in the development of photovoltaic technologies and the accuracy of Silvaco-Atlas in predicting their performance and efficiency

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Nadjat, Benadla, and Ghaffour Kheireddine. "Optimizing the performance of photovoltaic cells IBC (interdigitated back contact) by numerical simulation." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 6 (2019): 4566–72. https://doi.org/10.11591/ijece.v9i6.pp4566-4572.

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Solar energy is the most widely shared and abundant source all over the world. This kind of energy is exploited to produce electricity directly by the solar photovoltaic cell. Indeed, siliconphotovoltaic cells are the most widely spread technology. In the present article, we reported a numerical simulation of the interdigitated back contact (IBC) solar cell in order to obtain a higher conversion efficiency. The structure was realized on a p-type multi-crystalline silicon substrate, a p+ type amorphous silicon FSF, an n- type amorphous silicon based emitter, and a p- type BSF. The position of the emitter and the BSF were interdigitated and covered with ohmic contacts. The numerical simulation was carried out by SILVACO software under the Atlas module. The surface of structure was of a value of 10 cm2 under illumination AM1.5g. We studied the effect of the geometrical and the physical parameters of the structure with IBC on the performance of the cell. The optimum obtained conversion efficiency was 20.83%; this result confirms the potential of the heterojunction silicon technology.

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Tobbeche, S., and M. N. Kateb. "Two-Dimensional Modelling and Simulation of Crystalline Silicon n⁺pp⁺ Solar Cell." Applied Mechanics and Materials 260-261 (December 2012): 154–62. http://dx.doi.org/10.4028/www.scientific.net/amm.260-261.154.

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In this work, we present the simulation results of the technological parameters and the electrical characteristics of a crystalline silicon n+pp+ solar cell, using two-dimension (2D) software, namely TCAD Silvaco (Technology Computer Aided Design). TCAD Silvaco Athena is used to simulate various stages of the technology manufacturing, while TCAD Silvaco Atlas is used for the simulation of the electrical characteristics and the spectral response of the solar cell. The J-V characteristics and the external quantum efficiency (EQE) are simulated under AM 1.5 illumination. The conversion efficiency(η)of 16.06% is reached and the other characteristic parameters are simulated: the open circuit voltage (Voc) is of 0.63 V, the short circuit current density (Jsc) equals 30.54 mA/cm² and the form factor (FF) is of 0.83 for the n+pp+ solar cell with a silicon nitride antireflection layer (Si3N4). In order to highlight the importance of the back surface field (BSF), a comparison between two cells, one without BSF (structure n+p), the other with one BSF (structure n+pp+), was made. By creating a BSF on the rear face of the cell the short circuit current density increases from 28.55 to 30.54 mA/cm2, the open circuit voltage from 0.6 to 0.63 V and the conversion efficiency from 14.19 to 16.06%. A clear improvement of the spectral response is obtained in wavelengths ranging from 0.65 to 1.1 µm for the solar cell with BSF.

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Xu, Hui Fang, Guo Wei Cui, Yong Li, Wen Yang Sun, Kui Xia, and Chao He. "Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET." Japanese Journal of Applied Physics 63, no. 3 (2024): 034001. http://dx.doi.org/10.35848/1347-4065/ad27a2.

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Abstract A two-dimensional (2D) analytical model considering the effects of the gate oxide region, channel region, and buried oxide region for a non-lightly doped drain (LDD) SOI MOSFET is proposed. The top and bottom surface potential distributions have been derived on the basis of solving 2D Poisson’s equation and using an evanescent mode analysis. The potential distribution, threshold voltage, and threshold voltage roll-off have been verified by Silvaco ATLAS simulated results for the proposed device with different device parameters. The model agrees well with the simulation results under the above-mentioned conditions. Therefore, the analytical model provides the basic designing guidance for non-LDD SOI MOSFETs.

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Chawla, Rashmi, Poonam Singhal, and Amit Kumar Garg. "Design and Analysis of Multi Junction Solar Photovoltaic Cell with Graphene as an Intermediate Layer." Journal of Nanoscience and Nanotechnology 20, no. 6 (2020): 3693–702. http://dx.doi.org/10.1166/jnn.2020.17512.

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An efficacious Intermediate Layer (IML) is important for multi junction solar Photo Voltaic Cell (PVC) owing to its good electrical conductivity and optical transparency. In this research work, the use of Graphene as an IML with varied thickness on InGaP/GaAs/InGaAs multi-junction solar PVCs is investigated using virtual fabrication TCAD tool SILVACO-Atlas. The detail absorption rate from wavelength 300 nm (ultraviolet)-2500 nm (middle infra-red region) is determined and the effected modelling stages are recounted. The results after simulation are further confirmed with experimental data to prove accuracy of the research work proposed. The performance parameters with Jsc = 33.4 mA/cm2, Voc = 1.27 V, fill factor (FF) = 99.5% and conversion efficiency of 30.91% (1 sun) are obtained under AM1.5G illumination.

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Sara, Bechlaghem, Zebentout Baya, and Benamara Zineb. "Investigation of Cu(In, Ga)Se2 solar cell performance with non-cadmium buffer layer using TCAD-SILVACO." Materials Science-Poland 36, no. 3 (2018): 514–19. http://dx.doi.org/10.2478/msp-2018-0054.

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AbstractThe purpose of this work is to achieve the best efficiency of Cu(In, Ga)Se2 solar cells by replacing the CdS buffer layer with other nontoxic materials. The simulation tool used in this study is Silvaco-Atlas package based on digital resolution 2D transport equations governing the conduction mechanisms in semiconductor devices. The J-V characteristics are simulated under AM1.5G illumination. Firstly, we will report the modeling and simulation results of CdS/CIGS solar cell, in comparison with the previously reported experimental results [1]. Secondly, the photovoltaic parameters will be calculated with CdS buffer layer and without any buffer layer to understand its impact on the output parameters of solar cells. The simulation is carried out with the use of electrical and optical parameters chosen judiciously for different buffers (CdS, ZnOS and ZnSe). In comparison to simulated CdS/CIGS, the best photovoltaic parameters have been obtained with ZnOS buffer layer. The structure has almost the same open circuit voltage Voc and fill factor FF, and higher short circuit current density Jsc, which results in slightly higher conversion efficiencies.

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Manoua, Mohamed, Tariq Jannane, Otmane Abouelala, et al. "Modeling and optimization of n-ZnO/p-Si heterojunction using 2-dimensional numerical simulation." European Physical Journal Applied Physics 90, no. 1 (2020): 10101. http://dx.doi.org/10.1051/epjap/2020190333.

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In this work, n-ZnO/p-Si heterojunction was investigated using two-dimensional numerical simulation. The effect of Zinc Oxide thickness, carrier concentration in Zinc Oxide layer, minority carrier lifetime of bulk Silicon and the interface states density on electrical properties were studied in dark and under illumination conditions. This study aimed to optimize these parameters in order to obtain n-ZnO/p-Si solar cell with high conversion efficiency and low cost. The simulation was carried out by Atlas silvaco software. As results, a very low saturation current Is, low series resistance Rs, an ideality factor n between 1 and 1.5 were obtained for optimal charge carrier concentrations in the range [5 × 1019–5 × 1021 cm−3] and a thickness of Zinc Oxide between 0.6 and 2 µm. Moreover, a photovoltaic conversion efficiency of 24.75% was achieved without interfacial defect, which decreases to 5.49% for an interface defect density of 5 × 1014 cm−2.

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Benadla, Nadjat, and Kheireddine Ghaffour. "Optimizing the performance of photovoltaic cells IBC (contact back interdigitated) by numerical simulation." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 6 (2019): 4566. http://dx.doi.org/10.11591/ijece.v9i6.pp4566-4572.

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<p>Solar energy is the most widely shared and abundant source all over the world. This kind of energy is exploited to produce electricity directly by the solar photovoltaic cell. Indeed, silicon photovoltaic cells are the most widely spread technology. In the present article, we reported a numerical simulation of the interdigitated back contact (IBC) solar cell in order to obtain a higher conversion efficiency. The structure was realized on a p-type multi-crystalline silicon substrate, a p+ type amorphous silicon FSF, an n- type amorphous silicon based emitter, and a p- type BSF. The position of the emitter and the BSF were interdigitated and covered with ohmic contacts. The numerical simulation was carried out by SILVACO software under the Atlas module. The surface of structure was of a value of 10 cm<sup>2</sup> under illumination AM1.5g. We studied the effect of the geometrical and the physical parameters of the structure with IBC on the performance of the cell. The optimum obtained conversion efficiency was 20.83%; this result confirms the potential of the heterojunction silicon technology.</p>

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Kharchich, Fatima Zahra, and Abdellatif Khamlichi. "Simulation and performance optimization of GaAs/GaSb tandem solar cell." MATEC Web of Conferences 371 (2022): 02003. http://dx.doi.org/10.1051/matecconf/202237102003.

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Multi-junction solar cells provide the highest efficiencies. Intense research activity is being held with the aim to increase the actual performance reached by these cells. Harvesting most of the solar spectrum and finding the optimum design variables in terms of structural parameters and carrier concentrations are the main topics being investigated by solar developers. The GaAs/GaSb based dualjunction solar cell was found suitable for the best absorption of solar spectrum. In this work, an optimization approach was applied to fix the optimal parameters of the top base layer of this structure that provide the maximum efficiency. To achieve this, a series of numerical simulations were carried out by means of Silvaco ATLAS software under standard AM1.5G spectrum where thicknesses and doping levels of the top base layer were varied. The obtained optimal structure yields a power conversion efficiency of 41.65% with open circuit voltage of 1.78 V, short circuit current of 35.72 mA / cm2 and fill factor of 90.16%. The performance of the GaAs/GaSb dual-junction solar cell was further improved by using sunlight concentration. A conversion power efficiency of 45.78% at 60sun light concentration was attained. It was found also that above this level of concentration ratio the detriment effect of shunt resistance dominates.

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Duan, Xiaoling, Jincheng Zhang, Jiabo Chen, et al. "High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor." Micromachines 10, no. 1 (2019): 75. http://dx.doi.org/10.3390/mi10010075.

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A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel interface in the drain regions, and increase the tunneling barrier for the flow of holes from the conduction band of the drain to the valence band of the channel region under negative gate bias for n-TFET, which induces the ambipolar current being reduced from 1.93 × 10−8 to 1.46 × 10−11 A/μm. In addition, polar InGaN heterostructure TFET having a polarization effect can adjust the energy band structure and achieve steep interband tunneling. The average subthreshold swing of the polar drain engineered heterostructure TFET (DE-HTFET) is reduced by 53.3% compared to that of the nonpolar DE-HTFET. Furthermore, ION increases 100% from 137 mA/mm of nonpolar DE-HTFET to 274 mA/mm of polar DE-HTFET.

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Attari, Kamal, Lahcen Amhaimar, Ali El yaakoubi, Adel Asselman, and Mounir Bassou. "The Design and Optimization of GaAs Single Solar Cells Using the Genetic Algorithm and Silvaco ATLAS." International Journal of Photoenergy 2017 (2017): 1–7. http://dx.doi.org/10.1155/2017/8269358.

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Single-junction solar cells are the most available in the market and the most simple in terms of the realization and fabrication comparing to the other solar devices. However, these single-junction solar cells need more development and optimization for higher conversion efficiency. In addition to the doping densities and compromises between different layers and their best thickness value, the choice of the materials is also an important factor on improving the efficiency. In this paper, an efficient single-junction solar cell model of GaAs is presented and optimized. In the first step, an initial model was simulated and then the results were processed by an algorithm code. In this work, the proposed optimization method is a genetic search algorithm implemented in Matlab receiving ATLAS data to generate an optimum output power solar cell. Other performance parameters such as photogeneration rates, external quantum efficiency (EQE), and internal quantum efficiency (EQI) are also obtained. The simulation shows that the proposed method provides significant conversion efficiency improvement of 29.7% under AM1.5G illumination. The other results were Jsc = 34.79 mA/cm2, Voc = 1 V, and fill factor (FF) = 85%.

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Das, Banasree, and Manas Kumar Parai. "Influence on Characteristics of RTD Due to Variation of Different Parameters and Material Properties." International Journal of High Speed Electronics and Systems 26, no. 04 (2017): 1740022. http://dx.doi.org/10.1142/s0129156417400225.

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In this paper, novel features offered by Resonant Tunneling Diode (RTD) are reviewed by simulating it under different conditions. GaAs/AlGaAs based RTD is used as the reference one to obtain the characteristics due to parametric variations. To fulfil this purpose a simple model of resonant electronic transport through a double-barrier structure is developed. I-V characteristics are studied by varying barrier parameters and well width. Different peak and valley currents are measured under these conditions. For the same set of parameters both symmetric and asymmetric cases are considered. Different materials of lower effective mass are also taken into consideration to improve Peak to Valley Ratio (PVR). The Indium (In) based materials are considered to compare the characteristics obtained from the conventional GaAs based RTD structure. All these proposed structures are simulated using Silvaco Atlas software.

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Abushattal, Ahmad A., Antonio García Loureiro, and Nour El I. Boukortt. "Ultra-High Concentration Vertical Homo-Multijunction Solar Cells for CubeSats and Terrestrial Applications." Micromachines 15, no. 2 (2024): 204. http://dx.doi.org/10.3390/mi15020204.

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This paper examines advances in ultra-high concentration photovoltaics (UHCPV), focusing specifically on vertical multijunction (VMJ) solar cells. The use of gallium arsenide (GaAs) in these cells increases their efficiency in a range of applications, including terrestrial and space settings. Several multijunction structures are designed to maximize conversion efficiency, including a vertical tunnel junction, which minimizes resistive losses at high concentration levels compared with standard designs. Therefore, careful optimization of interconnect layers in terms of thickness and doping concentration is needed. Homo-multijunction GaAs solar cells have been simulated and analyzed by using ATLAS Silvaco 5.36 R, a sophisticated technology computer-aided design (TCAD) tool aimed to ensure the reliability of simulation by targeting a high conversion efficiency and a good fill factor for our proposed structure model. Several design parameters, such as the dimensional cell structure, doping density, and sun concentrations, have been analyzed to improve device performance under direct air mass conditions AM1.5D. The optimized conversion efficiency of 30.2% has been achieved with investigated GaAs solar cell configuration at maximum concentration levels.

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Djedoui, L., A. Aissat, A. Djemouai, and J. Vilcot. "Improving the efficiency of a GaInP solar cell using an AlGaAs buffer layer by optimizing the thicknesses of the PN junction." Digest Journal of Nanomaterials and Biostructures 17, no. 4 (2022): 1191–202. http://dx.doi.org/10.15251/djnb.2022.174.1191.

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In this work, the design and simulation of an GaInP single junction solar cell are presented. The work focuses mainly on the optimization of the PN junction thicknesses of n-base and pemitter cell layers in order to improve the cell conversion efficiency. Besides this optimization, the layers of the cell window AlGaInP and an added buffer AlGaAs were also optimized in term of doping and thicknesses using Atlas tool of SILVACO TCAD. The cell is simulated under the conditions of 1 sun and AM1.5G solar spectrum at 25°C. The simulated GaInP solar cell demonstrates an efficiency (𝜂𝜂) of 22.42%. The cell shows different electrical behaviors in terms of short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF), and external quantum efficiency (EQE). The obtained results are compared with those reported in the literature. Simulation results of the cell are: a Jsc of 18.35 mA/cm2 , Voc of 1.41 V and FF of 86.81% with the corresponding n-base layer and pemitter layer thickness of 0.410 µm and 0.174 µm respectively and the total device thickness of 0.65 µm. According to these results, the proposed cell demonstrates an improvement in the efficiency and a reduction of the used GaInP material.

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Khan, Sahanowaj, Aritra Acharyya, Hiroshi Inokawa, et al. "Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy." Photonics 10, no. 7 (2023): 800. http://dx.doi.org/10.3390/photonics10070800.

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A Schottky barrier high-electron-mobility avalanche transit time (HEM-ATT) structure is proposed for terahertz (THz) wave generation. The structure is laterally oriented and based on AlGaN/GaN two-dimensional electron gas (2-DEG). Trenches are introduced at different positions of the top AlGaN barrier layer for realizing different sheet carrier density profiles at the 2-DEG channel; the resulting devices are equivalent to high–low, low–high and low-high–low quasi-Read structures. The DC, large-signal and noise simulations of the HEM-ATTs were carried out using the Silvaco ATLAS platform, non-sinusoidal-voltage-excited large-signal and double-iterative field-maximum small-signal simulation models, respectively. The breakdown voltages of the devices estimated via simulation were validated by using experimental measurements; they were found to be around 17–18 V. Under large-signal conditions, the series resistance of the device is estimated to be around 20 Ω. The large-signal simulation shows that the HEM-ATT source is capable of delivering nearly 300 mW of continuous-wave peak power with 11% conversion efficiency at 1.0 THz, which is a significant improvement over the achievable THz power output and efficiency from the conventional vertical GaN double-drift region (DDR) IMPATT THz source. The noise performance of the THz source was found to be significantly improved by using the quasi-Read HEM-ATT structures compared to the conventional vertical Schottky barrier IMPATT structure. These devices are compatible with the state-of-the-art medium-scale semiconductor device fabrication processes, with scope for further miniaturization, and may have significant potential for application in compact biomedical spectroscopy systems as THz solid-state sources.

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Zidani, Ikram, Zouaoui Bensaad, Loumafak Hafaifa, Hamza Abid, and Ahmed Hafaifa. "Performance Enhancement of InGaP/GaAs Dual-Junction Solar Cells Through BSF Layer Optimization and Hetero-Tunnel Junction." East European Journal of Physics, no. 1 (March 3, 2025): 141–50. https://doi.org/10.26565/2312-4334-2025-1-13.

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This study focuses on the simulation and optimization of an InGaP/GaAs dual-junction solar cells using Silvaco Atlas software, with a special emphasis on the incorporation of a hetero tunnel junction. The hetero-tunnel junction plays a pivotal role in enabling efficient charge carrier transport between the sub-cells, significantly improving the overall cell efficiency. Additionally, a new back-surface field (BSF) layer was integrated into the GaAs bottom sub-cell to further enhance performance. Various material combinations for the hetero-tunnel junction such as GaInP/GaAs, AlGaInP/GaInP, and AlGaInP/GaAs were systematically tested to assess their influence on device efficiency. The optimized structure demonstrated a short-circuit current density of 1.780 mA/cm², an open-circuit voltage of 2.310 V, a fill factor of 86.501%, and a conversion efficiency of 35.57% under AM1.5G illumination at 300 K. Recombination losses were minimized by the BSF layer optimization in the top and bottom cell, particularly with AlGaInP, leading to improved charge collection. Elevated temperatures were found to reduce both the open-circuit voltage and efficiency, highlighting the necessity of thermal management. These optimizations represent significant improvements over prior designs.

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Ziani, Zakarya, Moustafa Yassine Mahdad, Mohammed Zakaria Bessenouci, Mohammed Chakib Sekkal, and Nacera Ghellai. "Enhancing Multi-Junction Solar Cell Performance: Advanced Predictive Modeling and Cutting-Edge CIGS Integration Techniques." Energies 17, no. 18 (2024): 4669. http://dx.doi.org/10.3390/en17184669.

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Historically, multi-junction solar cells have evolved to capture a broader spectrum of sunlight, significantly enhancing efficiency beyond conventional solar technologies. In this study, we utilized Silvaco TCAD tools to optimize a five-junction solar cell composed of AlInP, AlGaInP, AlGaInAs, GaInP, GaAs, InGaAs, and Ge, drawing on advancements documented in the literature. Our research focused on optimizing these cells through sophisticated statistical modeling and material innovation, particularly examining the relationship between layer thickness and electrical yield under one sun illumination. Employing III-V tandem solar cells, renowned for their superior efficiency in converting sunlight to electricity, we applied advanced statistical models to a reference solar cell configured with predefined layer thicknesses. Our analysis revealed significant positive correlations between layer thickness and electrical performance, with correlation coefficients (R2 values) impressively ranging from 0.86 to 0.96 across different regions. This detailed statistical insight led to an improvement in overall cell efficiency to 44.2. A key innovation in our approach was replacing the traditional germanium (Ge) substrate with Copper Indium Gallium Selenide (CIGS), known for its adjustable bandgap and superior absorption of long-wavelength photons. This strategic modification not only broadened the absorption spectrum but also elevated the overall cell efficiency to 47%. Additionally, the optimization process involved simulations using predictive profilers and Silvaco Atlas tools, which systematically assessed various configurations for their spectral absorption and current–voltage characteristics, further enhancing the cell’s performance. These findings underscore the critical role of precise material engineering and sophisticated statistical analyses in advancing solar cell technology, setting new efficiency benchmarks, and driving further developments in the field.

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Yu, Hong, Chenggui Gao, Jiang Zou, Wensheng Yang, and Quan Xie. "Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector." Photonics 8, no. 11 (2021): 509. http://dx.doi.org/10.3390/photonics8110509.

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To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg2Si/Si PDs are required. First, the structural model of the Mg2Si/Si heterojunction was established using the Silvaco Atlas module. Second, the effects of the doping concentrations of Mg2Si and Si on the photoelectric properties of the Mg2Si/Si heterojunction PD, including the energy band, breakdown voltage, dark current, forward conduction voltage, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on/off ratio, response time, and recovery time, were simulated. At different doping concentrations, the heterojunction energy band shifted, and a peak barrier appeared at the conduction band of the Mg2Si/Si heterojunction interface. When the doping concentrations of Si and Mg2Si layer were 1017, and 1016 cm−3, respectively, the Mg2Si/Si heterojunction PD could obtain optimal photoelectric properties. Under these conditions, the maximum EQE was 70.68% at 800 nm, the maximum responsivity was 0.51 A/W at 1000 nm, the minimum NEP was 7.07 × 10−11 WHz–1/2 at 1000 nm, the maximum detectivity was 1.4 × 1010 Jones at 1000 nm, and the maximum on/off ratio was 141.45 at 1000 nm. The simulation and optimization result also showed that the Mg2Si/Si heterojunction PD could be used for visible and SWIR photodetection in the wavelength range from 400 to 1500 nm. The results also provide technical support for the future preparation of eco-friendly heterojunction photodetectors.

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Ziko, Mehadi Hasan, Ants Koel, Toomas Rang, and Jana Toompuu. "Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes." Materials Science Forum 1004 (July 2020): 960–72. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.960.

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The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

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Wang, Haiping, Feiyu Zhang, Xuzhi Zhao, et al. "Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure." Electronics 14, no. 10 (2025): 2076. https://doi.org/10.3390/electronics14102076.

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We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm2, the proposed device achieves a photocurrent density of 1.68 × 10−3 mA/mm, responsivity of 8.41 × 105 A/W, photo-to-dark-current ratio of 2.0 × 108, UV-to-visible rejection ratio exceeding 108, detectivity above 1 × 1019 cm·Hz1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations.

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Wang, Peiran, Chenkai Deng, Hongyu Cheng, et al. "Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate." Crystals 13, no. 1 (2023): 110. http://dx.doi.org/10.3390/cryst13010110.

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In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP ~19.9% compared with GFP ~49.8% when a 1 ms duration pre-stress was applied with Vds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of ~454.4 V compared to the GFP ~394.3 V and the basic devices ~57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of Cgs = 1.03 pF and Cgd = 0.13 pF than those of the GFP structure (i.e., Cgs = 1.89 pF and Cgd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 130 GHz than those of the GFP structure (i.e., ft = 27 GHz and fmax = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices.

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Srivastava, Pooja, Aditi Upadhyaya, Shekhar Yadav, Chandra Mohan Singh Negi, and Arvind Kumar Singh. "Analysis of Nanoscale Short Channel Effects in Cylindrical Gate-All-Around Junctionless FETs and Performance Enhancement with GaAs and III–V Materials for Low-Power, High Frequency Applications." Electronics 14, no. 6 (2025): 1134. https://doi.org/10.3390/electronics14061134.

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With the advancement of the semiconductor industry into the sub-10 nm regime, high-performance, low-energy transistors have become important, and gate-all-around junctionless field-effect transistors (GAA-JLFETs) have been developed to meet the demands. Silicon (Si) is still the dominant semiconductor material, but other potential alternatives, such as gallium arsenide (GaAs), provide much higher electron mobility, improving the drive current and switching speed. In this study, our contributions include a comparative analysis of Si and GaAs-based cylindrical GAA-JLFETs, using threshold voltage behavior, electrostatic control, short channel effects, subthreshold slope, drain-induced barrier lowering, and leakage current as the metrics for performance evaluation. A comprehensive analytical modeling approach is employed, solving Poisson’s equation and utilizing numerical simulations to assess device characteristics using the ATLAS SILVACO tool under varying channel lengths and gate biases. Comparisons between Si and GaAs-based devices show what trade-offs exist and what the material engineering strategies are to use the advantages of GaAs while minimizing some disadvantages. The results of the study are a valuable contribution to the design and optimization of next-generation FET architectures, pointing the direction for enabling next-generation beyond CMOS technology.

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Babu, P. J. S., T. S. Padmanabhan, M. I. Ahamed, and A. Sivaranjani. "Studies on copper indium selenide/Zinc sulphide semiconductor quantum dots for solar cell applications." Chalcogenide Letters 18, no. 11 (2021): 701–15. http://dx.doi.org/10.15251/cl.2021.1811.701.

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Despite dedicated efforts to develop efficient quantum dot sensitized (QDS) photovoltaic cells, the efficiency of these cells still lags behind their theoretical value. In order to increase photo conversion efficiency, the extant methods are predominantly focus on modifying the band gaps of quantum dots and optimizing the interfaces of cell components to increase light utilization capacity. In this study, we have designed and investigated QDS solar cells using Copper Indium Selenide (CuInSe2 or simply CIS) as a quantum dot absorber. In order to achieve tunable bandgap, increased photoluminescence, reduced density of surface defect state and higher light-harvesting efficiency, the CuInSe2 is alloying with Zinc sulfide (ZnS) to design Copper Indium Selenide-Zinc sulfide (CISZS) quantum dots. The resulting CISZS sensitizer exhibits improved photoelectric characteristics and greater chemical stability. The performance of the CIS and CISZS solar cells is evaluated individually through Silvaco-Atlas simulation software in terms of measures such as power conversion efficiency, open-circuit voltage (Voc), the density of short-circuit current (Jsc) and fill-factor (FF). The CISZS-based solar cells show an average conversion efficiency of 23.5% (i.e., 4.94% higher than the efficiency of CIS solar cell) with Voc = 0.596V, Jsc = 23.61mA/cm2 and FF = 0.84 under AM 1.5G with a power density of 100mW/cm2 . The achieved power conversion efficiency indicates the greatest performances of the QDS solar cells. These non-toxic photovoltaic devices reveal better optical and electrical properties than toxic lead and cadmium chalcogenide quantum dots absorbers.

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Pennisi, Giuseppe, Mario Pulvirenti, Luciano Salvo, et al. "Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions." Energies 17, no. 11 (2024): 2651. http://dx.doi.org/10.3390/en17112651.

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This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at improving efficiency. Indeed, reverse recovery is a part of the switching transient, but it has a significant role due to its impact on recovery energy and charge. The set of different operating conditions has been properly chosen to prevent or force the snappy recovery of the device under testing. The experimental results and specific software simulations have revealed phenomena unknown in the literature. More specifically, the analysis of the reverse recovery charge, Qrr, revealed two unexpected phenomena at high temperatures: it decreased with increasing gate voltage; the higher the device threshold, the higher the Qrr. TCAD-Silvaco (ATLAS v. 5.29.0.C) simulations have shown that this is due to a displacement current flowing in the drift region due to the output capacitance voltage variation during commutation. From the analysis of the snappy recovery, it has emerged that there is a minimum forward current slope, below which the reverse recovery cannot be snappy, even for a high current level. Once this current slope is reached, Qrr varies with the forward current only.

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Priya, Anjali, Nilesh Anand Srivastava, and Ram Awadh Mishra. "Design and Analysis of Nanoscaled Recessed-S/D SOI MOSFET-Based Pseudo-NMOS Inverter for Low-Power Electronics." Journal of Nanotechnology 2019 (March 28, 2019): 1–12. http://dx.doi.org/10.1155/2019/4935073.

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In this paper, a comparative analysis of nanoscaled triple metal gate (TMG) recessed-source/drain (Re-S/D) fully depleted silicon-on-insulator (FD SOI) MOSFET has been presented for the design of the pseudo-NMOS inverter in the nanometer regime. For this, firstly, an analytical modeling of threshold voltage has been proposed in order to investigate the short channel immunity of the studied device and also verified against simulation results. In this structure, the novel concept of backchannel inversion has been utilized for the study of device performance. The threshold voltage has been analyzed by varying the parameters of the device like the ratio of metal gate length and the recessed-source/drain thickness for TMG Re-S/D SOI MOSFET. Drain-induced barrier lowering (DIBL) has also been explored in terms of recessed-source/drain thickness and the metal gate length ratio to examine short channel effects (SCEs). For the exact estimation of results, the comparison of the existing multimetal gate structures with TMG Re-S/D SOI MOSFET has also been taken under study in terms of electrostatic performance, i.e., threshold voltage, subthreshold slope, and on-off current ratio. These structures are investigated with the TCAD numerical simulator from Silvaco ATLAS. Furthermore, for the first time, TMG Re-S/D FD SOI MOSFET-based pseudo-NMOS inverter has been designed to observe the device performance at circuit levels. It has been found that the device offers high noise immunity with optimum switching characteristics, and the propagation delay of the studied circuit is recorded as 0.43 ps.

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Xiong, Songming, Wenxian Huang, Ali Hassan, and Rong Zhong. "Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer." Journal of Physics: Conference Series 2355, no. 1 (2022): 012073. http://dx.doi.org/10.1088/1742-6596/2355/1/012073.

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Abstract The reason that p-GaN gate normally-off high electron mobility transistor (HEMT) device is able to draw prevail interests is not only for its outstanding electric properties of low on-resistance and high thermal conductivity, but also for its applications under high frequency and high voltage. In HEMT devices, the setting of Al component in the AlGaN barrier layer is a key parameter to affect the formation of two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction, and therefore directly determines the performance of the devices. This paper uses the Atlas module of the Silvaco-TCAD software to design and simulate p-GaN gate normally-off HEMT devices to investigate the effect of Al mole fraction content in the AlGaN barrier layer on the electrical performance, as well as the causes in terms of the conduction band energy structure diagram. The results show that the threshold voltage of the HEMT device decreases, the maximum saturation drain current increases, and the peak transductance of the HEMT device increases with increasing the Al content. In the off-state (zero gate voltage), the AlGaN/GaN potential well depth becomes deeper as the Al mole fraction increases, resulting in a lower driven force to rebuild the minimized 2DEG concentration in the GaN layer for switching from off-state to on-state, and this leads to a lower threshold voltage. While, in the on-state (5 V gate voltage), the deeper AlGaN/GaN potential well depth as the Al mole fraction increases, the higher of the 2DEG concentration of the GaN layer, leading to a higher maximum saturation output drain current. After optimization, the integrated electrical performance of the HEMT devices has been found best when the Al mole fraction content is about 0.25. The results obtained from the simulations are helpful for the experimental design of p-GaN gate normally-off HEMT devices

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MOSTEFA KARA, Selma, and Abdelhalim BENMANSOUR. "Properties of High Efficiency Nanostructured Copper Indium Gallium Selenide Thin Film Solar Cells." Electrotehnica, Electronica, Automatica 70, no. 1 (2022): 3–12. http://dx.doi.org/10.46904/eea.22.70.1.1108001.

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Nowadays it is widely acknowledged that solar photovoltaic energy is one of the preferred options for sustainable management of the future energy needs of the world. For this, new technological processes, known as second and third generations, based on the use of thin films and nanomaterials, have recently been developed in order to reduce the cost of solar cells. Over the past few years, the yield of second-generation Cu(In, Ga)Se2 thin-film cells has exceeded 22 %. It was found that as nanostructured materials such as nanowire arrays often have a higher light absorption rate than thin films, they can therefore be used. This article aims to design and model nanostructured CIGS thin film solar cells based on indium tin oxide (ITO) nanowires. Modelling provides information on the operation of CIGS solar cells, as well as on the mechanisms of absorption and electric charge transport. The purpose of this work is to evaluate the electrical and optical characteristics (ISC, VOC, FF, η) of a ZnO/CdS/CIGS heterojunction thin film structure. Thus, an optimum efficiency of 17.57 % and a form factor of 76.56 % were achieved. Afterwards, the Mo film rear contact was replaced with ITO nanowires which were introduced into the CIGS-based solar cell. The results indicated that the solar cells under study exhibited very good photovoltaic performance, with an efficiency of 21.26 %. It is worth noting that this performance is higher than that of the corresponding CIGS thin film cells. In addition, the large active surface area of the ITO nanowire electrode and the short distance that the charge must travel helped to improve charge collection in the nanostructure. This would certainly increase the short circuit current ISC, and consequently the electrical efficiency. The simulation was based on the low-field mobility model, and on Shockley-Read-Hall (SRH) and Auger carrier transport and recombination models which may be activated in ATLAS-SILVACO (2D).

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Cazarre, A., N. Nolhier, F. Morancho, P. Austin, and P. Calmon. "Initiation à la simulation bidimensionnelle Environnement SILVACO ( ATHENA - ATLAS)." J3eA 4 (2005): 003. http://dx.doi.org/10.1051/j3ea:200515.

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Parajuli, D., Deb Kumar Shah, Devendra KC, Subhash Kumar, Mira Park, and Bishweshwar Pant. "Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach." Electrochem 3, no. 3 (2022): 407–15. http://dx.doi.org/10.3390/electrochem3030028.

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The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 1019 cm−3 and 1 × 1015 cm−3 were optimized for n-InGaN and p-InGaN regions, respectively. The thickness of 300 nm was optimized for both n-InGaN and p-InGaN regions. The highest efficiency of 22.17% with Jsc = 37.68 mA/cm2, Voc = 0.729 V, and FF = 80.61% was achieved at optimized values of doping concentration and thickness of n-InGaN and p-InGaN regions of InGaN solar cells. The simulation study shows the relevance of the Silvaco ATLAS simulation tool, as well as the optimization of doping concentration and thickness of n- and p-InGaN regions for solar cells, which would make the development of high-performance InGaN solar cells low-cost and efficient.

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Stęszewski, Jędrzej, Andrzej Jakubowski, and Michael L. Korwin-Pawlowski. "Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys." Journal of Telecommunications and Information Technology, no. 3 (June 25, 2023): 93–95. http://dx.doi.org/10.26636/jtit.2007.3.837.

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A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments

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Taouririt, Taki Eddine, Afak Meftah, Nouredine Sengouga, Marwa Adaika, Slimane Chala, and Amjad Meftah. "Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey." Nanoscale 11, no. 48 (2019): 23459–74. http://dx.doi.org/10.1039/c9nr03395e.

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This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.

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Islam, Md Rabiul, Md Kamrul Hasan, Md Abdul Mannan, M. Tanseer Ali, and Md Rokib Hasan. "Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor." AIUB Journal of Science and Engineering (AJSE) 18, no. 2 (2019): 73–80. http://dx.doi.org/10.53799/ajse.v18i2.43.

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We have investigated the performance of Gallium Nitride (GaN) based Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Atlas Device Simulation Framework -Silvaco has been used to access Non-Equilibrium Green Function to distinguish the transfer characteristics curve, ON state current (ION), OFF-state current (IOFF), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Electron Current Density, Conduction Band Energy and Electric Field. The concept of Solid state device physics on the effect of gate length studied for the next generation logic applications. GaN-based DG MOSFETs shows better performance than Si-based Single gate MOSFETs. The proposed device has drawn the attention over conventional SG-MOSFET due to fas switching performance. The device turn on and turn off voltage is respectively VGS=1V(On state) and VGS-0V(OFF State). To validate our simulation tool and model results, previous research model has been investigated using Silvaco Atlas and the results obtained are compared to the previous results.

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Иванов, П. А., А. С. Потапов та Т. П. Самсонова. "Моделирование переходных процессов в полупроводниковых приборах на основе 4H-SiC (учет неполной ионизации легирующих примесей в модуле ATLAS программного пакета SILVACO TCAD)". Физика и техника полупроводников 53, № 3 (2019): 407. http://dx.doi.org/10.21883/ftp.2019.03.47295.9014.

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AbstractTransient process in a resistor–capacitor (RC) circuit with a reverse-biased 4 H -SiC p – n diode as the capacitive element is simulated. Simulation is performed with the ATLAS software module from the SILVACO TCAD system for technology computer-aided design (TCAD). An alternative way, to that in ATLAS, to set the parameters of doping impurities partly ionized in 4 H -SiC at room temperature is suggested. (The INCOMPLETE physical model available in the ATLAS module, which describes the incomplete ionization of doping impurities in semiconductors, is unsuitable for simulating the dynamic characteristics of devices.) The simulation results are discussed in relation to previously obtained experimental results.

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DWIVEDI, A. D. D., and POOJA KUMARI. "TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs." Surface Review and Letters 27, no. 05 (2019): 1950145. http://dx.doi.org/10.1142/s0218625x19501452.

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This paper presents finite element-based numerical simulation and performance analysis of dual and single gate pentacene-based organic thin film transistors (OTFTs) using technology computer-aided design (TCAD) tools. Electrical characteristics of the devices have been simulated using 2D numerical device simulation software ATLAS™ from Silvaco International. Also, device parameters like threshold voltage, mobility, transconductance, subthreshold swing and current on/off ratio of the single and dual gate OTFTs have been extracted and compared.

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Dubey, Sarvesh, and Rahul Mishra. "Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control." SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology 9, no. 01 (2017): 67–72. http://dx.doi.org/10.18090/samriddhi.v9i01.8340.

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The present paper deals with the analytical modeling of subthreshold characteristics of short-channel fully-depleted recessed-source/drain SOI MOSFET with back-gate control. The variations in the subthreshold current and subthreshold swing have been analyzed against the back-gate bias voltage, buried-oxide (BOX) thickness and recessed source/drain thickness to assess the severity of short-channel effects in the device. The model results are validated by simulation data obtained from two-dimensional device simulator ATLAS from Silvaco.

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Hossain, Md Mosabbir, Kh Shakil Ahmed, Kazi Mysoon Rubyat, et al. "Simulation-Driven Fabrication and Performance Evaluation of n-MOSFET using Silvaco Athena and Atlas: From Process to Parameters." Journal of Microprocessor and Microcontroller Research 1, no. 3 (2014): 21–43. http://dx.doi.org/10.46610/jommr.2024.v01i03.003.

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In this work, an n-channel MOSFET of Silvaco TCAD has been fabricated and analyzed using commercially available simulation software tools, namely Athena and Atlas. The fabrication of NMOS has been done through a series of fabrication steps, which include wafer selection with appropriate orientation and phosphorus doping, oxide diffusion, boron-implantation for p-well formation, polysilicon deposition, phosphorus-implantation for heavily doped n+-regions, aluminum-deposition for source/drain contact and extraction of unused materials-all of these steps has been performed through the Athena tool. Afterward, Atlas performs several simulations to deduce the transfer characteristics curves (the ID vs. VGS curves). The various performance parameters of the fabricated device, which include the on current (Ion), the off current (Ioff), the on/off ratio, the threshold voltage (Vth), the subthreshold swing, and the Drain-Induced Barrier Lowering (DIBL), are also determined using the Atlas tool. These simulation-basedanalyses provide a better understanding of an NMOS device's fabrication process and a clearer physical insight into its characteristiccurves and performance parameters.

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Mehrabian, Masood, Sina Dalir, and Hossein Shokrvash. "Numerical simulation of CdS quantum dot sensitized solar cell using the Silvaco-Atlas software." Optik 127, no. 20 (2016): 10096–101. http://dx.doi.org/10.1016/j.ijleo.2016.08.016.

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Sanjay, Sharma, Yadav R.P., and Janyani Vijay. "Substrate Current Evaluation for Lightly and Heavily Doped MOSFETs at 45 nm process Using Physical Models." Bulletin of Electrical Engineering and Informatics 5, no. 1 (2016): 120–25. https://doi.org/10.11591/eei.v5i1.556.

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Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequency (RF) it becomes a key issue. In deep sub micron MOSFETs hot carrier effect induces device degradation. The impact ionization phenomenon is one of the main hot carrier effects. The paper covers the process and device level simulation of MOSFETs by TCAD and the substrate current comparison in lightly and heavily doped MOS. PMOS and NMOS devices are virtually fabricated with the help of ATHENA process simulator. The modeled devices include the hot carrier effects. The MOS devices are implemented on lightly and heavily doped substrates and substrate current is evaluated and compared with the help of ATLAS device simulator. Substrate current is better in lightly doped substrate than in heavily doped one. Drain current is also better in lightly doped than heavily doped substrates. Silvaco TCAD Tool is used for Virtual fabrication and simulation. ATHENA process simulator is used for virtual fabrication and ATLAS device simulator is used for device characterization.

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Karker, Olfa, Konstantinos Zekentes, Aude Bouchard, et al. "Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures." Materials Science Forum 1062 (May 31, 2022): 608–12. http://dx.doi.org/10.4028/p-23d7ab.

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A SiCNWFET device serving as a biosensor was designed and simulated using Silvaco ATLAS device simulation software. The performance of the designed device in charges sensing was investigated. The device shows the ability to recognize different interface charge values ranging from-1.10E11 to-5.10E12 cm-2 applied on the surface of the silicon carbide nanowire channel to simulate target charge biomolecules that bound to the biosensor. A significant change in the output current is observed due to the presence of different values of fixed interface charge densities. An optimum, according to the TCAD simulation, the 4H-SiC epitaxial structure has been grown. The designed device was fully fabricated on this structure and it exhibited acceptable electrical characteristics.

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Chowdhury, Md. Iqbal Bahar. "Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD." Journal of Electronic Design Engineering 3, no. 3 (2017): 1–9. https://doi.org/10.5281/zenodo.15319750.

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This work presents a SILVACO TCAD based fabrication and device simulation of a topgated graphene field-effect transistor. Effects of channel length and channel doping concentrations on the characteristics curves (transfer and output characteristics) of the GFET are also investigated and analyzed physically to obtain more physical insight. 

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A, N. Moulai Khatir, Guen-Bouazza A, and Bouazza B. "3D Simulation of Fin Geometry Influence on Corner Effect in Multifin Dual and Tri-Gate SOI-Finfets." International Journal of Nano Studies & Technology 2, no. 4 (2013): 29–32. https://doi.org/10.19070/2167-8685-130006.

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In this work the corner effect sensitivity to fin geometry variation in multifin dual and tri-gate SOI-FinFETs is studied through a commercial, three-dimensional numerical simulator ATLAS from Silvaco International. These devices are compatible with conventional silicon integrated circuit processing, but offer superior performance as the device is scaled into the nanometer range. This study aims wider to use multiple fins between the source and drain regions. The results indicate that for both multifin double and triple gate FinFETs, the corner effect does not lead to an additional leakage current and therefore does not deteriorate the SOI-FinFET performance.

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Zhang, Junqin, Aofei Liu, Hailong Xing, and Yintang Yang. "Study on surface leakage current at sidewall in InP-based avalanche photodiodes with mesa structure." AIP Advances 12, no. 3 (2022): 035336. http://dx.doi.org/10.1063/5.0080656.

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A multi-mesa InGaAs/InP avalanche photodiode (APD) with the advantage of the completely restricted electric field is proposed. The surface defects, which are the reasons for the sidewall leakage current generation in the mesa-structure APD, are theoretically studied, and then a sidewall leakage current model is developed. The Silvaco Atlas device simulation tool is used to analyze the generation mechanism of the sidewall leakage current, and the effects of different mesa structures on the sidewall leakage current of the APD are compared. The simulation results show that the sidewall leakage current of the multi-mesa APD is about zero and is not affected by the terrace size, which can be contributed by a very weak electric field at the sidewall.

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Mao, Hong-kai, Ying Wang, Xue Wu, and Fang-wen Su. "Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss." Micromachines 10, no. 12 (2019): 815. http://dx.doi.org/10.3390/mi10120815.

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In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. By adjusting the doping concentration on both sides of the heterojunction, the turn-off loss is further reduced without sacrificing other characteristics of the device. The electrical characteristics of the device were simulated through the Silvaco ATLAS 2D simulation tool and compared with the traditional structure to verify the design idea. The simulation results show that, compared with the traditional structure, the turn-off loss of the proposed structure was reduced by 58.4%, the breakdown voltage increased by 13.3%, and the forward characteristics sacrificed 8.3%.

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PICOS, R., E. GARCIA, M. ESTRADA, A. CERDEIRA, and B. IÑIGUEZ. "EFFECT OF PROCESS VARIATIONS ON AN OTFT COMPACT MODEL PARAMETERS." International Journal of High Speed Electronics and Systems 20, no. 04 (2011): 815–28. http://dx.doi.org/10.1142/s0129156411007070.

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We have studied the effect of some of the possible deviations on the values of the extracted parameters of a specific OTFT model, considering OTFTs designed using P 3 HT as semiconductor layer, PMMA as insulator, bottom gate, and top gold contacts. Specifically, we have studied the influence of misposition or misalignment of the masks, the effect of imperfections of etching, and the effect of variations on the layer deposition process. These effects have been simulated using the Silvaco Athena software, and they have been modeled as horizontal shifts of the etching windows and variations of the layers thickness. Once the devices were defined, they were simulated using Silvaco Atlas, and parameter extraction was performed using a specifically developed algorithm. We have found a strong correlation among some of the physical parameters and the model parameters that may offer useful insight for process optimization. Moreover, strong correlations have been found also among the model parameters. We have used these results to develop a Monte Carlo model, suitable for statistical circuit simulation.

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Abd Rahim, Alhan Farhanah, N. M. Sah, I. H. Hamzah, Siti Noraini Sulaiman, and Musa Mohamed Zahidi. "Study on the Effect of Porous Silicon Sizes for Potential Visible Photodetector." Applied Mechanics and Materials 815 (November 2015): 121–30. http://dx.doi.org/10.4028/www.scientific.net/amm.815.121.

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In this work, the characterization of porous silicon (PS) for potential visible light emission was investigated by simulation. SILVACO TCAD simulator was used to simulate PS by using process simulator, ATHENA and device simulator, ATLAS. Different pore diameter sizes of the PS structures were constructed. The structural, optical and electrical characteristics of the structures PS were investigated by current-voltage (I-V), current gain, spectral response and the energy band gap. It was observed that PS enhances the current gain compare to bulk Si and exhibited photo emission in the visible spectrum which constitutes to the quantum confinement effect of the Si in the PS structures.

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Drăgan, Florin, Ørnulf Nordseth, Laurențiu Fara, et al. "Optical Modeling and Simulation of Tandem Metal Oxide Solar Cells." Annals of West University of Timisoara - Physics 60, no. 1 (2018): 56–66. http://dx.doi.org/10.2478/awutp-2018-0006.

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AbstractAn investigation of silicon-based tandem solar cells incorporating Al-doped ZnO (AZO) and Cu2O metal oxides, via two of the most efficient methods of optical modeling, specifically ray tracing and transfer matrix algorithms, was performed. The simulations were conducted based on specialized software, namely Silvaco Atlas and MATLAB, as well as on OPAL2 simulation platform. The optical analysis involved the calculation of the spectral curves for reflectance, absorptance and transmittance for different thicknesses of the thin film layers constituting the cell. It was established the optimum thickness of the AZO layer based on the minimum reflectance and maximum transmittance. Moreover, several materials were investigated in order to determine the optimum buffer layer for the tandem solar cell, based on optical modeling. The optical parameters of the ZnO/Cu2O top subcell were optimized, in order to achieve the highest conversion efficiency of such heterojunction solar cell.

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Tayoub, Hadjira, Baya Zebentouta, and Zineb Benamara. "TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor." Pakistan Journal of Scientific & Industrial Research Series A: Physical Sciences 63, no. 2 (2020): 89–93. http://dx.doi.org/10.52763/pjsir.phys.sci.63.2.2020.89.93.

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 Low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) have been studied because of their high performance in Active Matrix Liquid Crystal Displays (AMLCD's) and Active Matrix Organic Light-Emitting Diode (AMOLED) applications. The purpose of this work is to simulate the impact of varying the electrical and physical parameters (the interface states, active layer's thickness and BBT model) in the transfer characteristics of poly-Si TFT to extract the electrical parameters like the threshold voltage, the mobility and to evaluate the device performance. The device was simulated using ATLAS software from Silvaco, the results show that the electrical and physical parameters of poly-Si TFT affect significantly its transfer characteristics, choosing suitable parameters improve high-performance transistor. Such results make the designed structure a promising element for large-scale electronics applications.  

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Bella, Mourad, and Mehdi Ghoumazi. "I_V Characteristic of Vertical Double Diffused Metal Oxide Semiconductor (VDMOS) Power Transistor Using Silvaco-TCAD." European Journal of Electrical Engineering 24, no. 4 (2022): 221–25. http://dx.doi.org/10.18280/ejee.240407.

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Today's electronics scenario finds itself with the advancement in the field of foremost important component MOSFET. Though one-step ahead of MOSFET, power MOS transistor such as VDMOS has recently begun to rival bipolar devices in power handling capability. In this paper, the results of simulation of VDMOS transistor have been presented. Additionally, the transfer characteristics of the VDMOS transistor are simulated. The drain current (Ids) as a function of the gate voltage and of the drain voltage was simulated for different work function values as well as for several oxide thickness and gate lengths, respectively. The results obtained show that when the work function and the oxide thickness as well as the gate length increase, the threshold voltage also increases. The VDMOS transistor is virtually fabricated using ATHENA software and simulation is done with help of ATLAS software and all graphs are plotted using Tonyplot in Silvaco.

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50

Chandra, Varun, Nidhi Sinha, and Garima Mathur. "Modeling, Numerical Simulation and Performance Optimization of P3HT:PC₇₀BM Based Bulk Hetero Junction Organic Solar Cells." Journal of Nanoelectronics and Optoelectronics 17, no. 4 (2022): 579–87. http://dx.doi.org/10.1166/jno.2022.3242.

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In this paper we had presented the modeling and simulation of organic solar cell based on P3HT:PC70BM using TCAD tool Silvaco ATLAS™ using Aluminum and Silver as cathodes. The Poole-Frenkel model was used to estimate the organic solar cell characteristics in combination with Langevin recombination model. The main challenges faced during the modeling were the repetitive iteration which was needed to obtain a numerical solution for the figure of merits. The optimized thickness shows the considerable change in efficiency, fill factor and open-circuit voltage. The efficiency obtained is 8.14% with short circuit current density of 20.17 mA/cm2, open circuit voltage as 707.97 mV approximately and fill factor is 55.47% which is higher than the reported works in literature.

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Journal articles on the topic 'Simulation under atlas/ silvaco'

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