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Journal articles on the topic 'Single electron spin'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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1

Dempsey, Kari J., David Ciudad, and Christopher H. Marrows. "Single electron spintronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1948 (2011): 3150–74. http://dx.doi.org/10.1098/rsta.2011.0105.

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Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes with a non-magnetic island can lead to spin accumulation on the island. On the other hand, making the dot also ferromagnetic introduces new physics such as tunnelling magnetoresistance enhancement in the cotunnelling regime and manifestations of the Kondo effect. Such nanoscale islands are also found to have long spin lifetimes. Conventional spintronics makes use of the average spin-polarization of a large ensemble of electrons: this new approach offers the prospect of accessing the quantum properties of the electron, and is a candidate approach to the construction of solid-state spin-based qubits.

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2

von Borczyskowski, C., J. Köhler, W. E. Moerner, M. Orrit, and J. Wrachtrup. "Single-molecule electron spin resonance." Applied Magnetic Resonance 31, no. 3-4 (2007): 665–76. http://dx.doi.org/10.1007/bf03166609.

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3

Chou, C. L. "Non-empty quantum dot as a spin-entangler." Quantum Information and Computation 3, no. 4 (2003): 307–16. http://dx.doi.org/10.26421/qic3.4-2.

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We consider a three-port single-level quantum dot system with one input and two output leads. Instead of considering an empty dot, we study the situations that two input electrons co-tunnel through the quantum dot occupied by one or two dot electrons. We show that electron entanglement can be generated via the co-tunneling processes when the dot is occupied by two electrons, yielding non-local spin-singlet states at the output leads. When the dot is occupied by a single electron, we show that by carefully selecting model parameters non-local spin-triplet electrons can also be obtained at the output leads if the final dot electron has the same spin as that of the initial dot electron.

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4

Mashayekhi, M. Z., K. Abbasian, and S. Shoar-Ghaffari. "Electron spin relaxation control in single electron QDs." Advances in nano research 1, no. 4 (2013): 203–10. http://dx.doi.org/10.12989/anr.2013.1.4.203.

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5

Bednarek, S., J. Pawłowski, M. Górski, and G. Skowron. "All-electric single electron spin initialization." New Journal of Physics 19, no. 12 (2017): 123006. http://dx.doi.org/10.1088/1367-2630/aa9368.

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6

Barnaś, J., and I. Weymann. "Spin effects in single-electron tunnelling." Journal of Physics: Condensed Matter 20, no. 42 (2008): 423202. http://dx.doi.org/10.1088/0953-8984/20/42/423202.

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7

Mohanty, P. "Electron Decoherence by a Single Spin." Journal of the Physical Society of Japan 72, Suppl.A (2003): 13–18. http://dx.doi.org/10.1143/jpsjs.72sa.13.

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8

Buchachenko, A. L., M. A. Kozhushner, and B. R. Shub. "Tunneling spectroscopy of single electron spin." Russian Chemical Bulletin 47, no. 9 (1998): 1683–85. http://dx.doi.org/10.1007/bf02495685.

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9

Kane, B. E., N. S. McAlpine, A. S. Dzurak, et al. "Single-spin measurement using single-electron transistors to probe two-electron systems." Physical Review B 61, no. 4 (2000): 2961–72. http://dx.doi.org/10.1103/physrevb.61.2961.

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10

WANG, Y., A. P. LIU, J. BAO, X. G. XU, and Y. JIANG. "SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR." Modern Physics Letters B 22, no. 16 (2008): 1535–45. http://dx.doi.org/10.1142/s0217984908016273.

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In this paper, large spin polarization and magnetoconductance in a ferromagnet (FM)/ferromagnetic insulator (FI)/two-dimensional electron gas (2DEG)/non-magnetic insulator (I)/FM hybrid structure are theoretically predicted by introducing a spin-filtering injector. In the framework of coherent tunneling model, the electron transmission probability, spin polarization and magnetoconductance in the hybrid structure all oscillate with the electron density within the 2DEG channel. A complete single-mode spin injection would be realized by designing a well-defined geometry to adjust the competition between the spin-dependent tunneling of the conductive electrons and spin-filtering effect of the FI barrier.

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11

Gualco, Gabriele, Jens Anders, Andrzej Sienkiewicz, Stefano Alberti, László Forró, and Giovanni Boero. "Cryogenic single-chip electron spin resonance detector." Journal of Magnetic Resonance 247 (October 2014): 96–103. http://dx.doi.org/10.1016/j.jmr.2014.08.013.

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12

Könemann, J., P. König, and R. J. Haug. "Spin-resolved transport in single-electron tunneling." Physica E: Low-dimensional Systems and Nanostructures 13, no. 2-4 (2002): 675–78. http://dx.doi.org/10.1016/s1386-9477(02)00256-4.

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13

Martinek, J., J. Barnaś, S. Maekawa, H. Schoeller, and G. Schön. "Spin accumulation in ferromagnetic single-electron transistors." Physica E: Low-dimensional Systems and Nanostructures 18, no. 1-3 (2003): 54–55. http://dx.doi.org/10.1016/s1386-9477(02)00959-1.

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14

Korotkov, A. N., and V. I. Safarov. "Spin injection in ferromagnetic single-electron transistor." Superlattices and Microstructures 25, no. 1-2 (1999): 259–62. http://dx.doi.org/10.1006/spmi.1998.0644.

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15

Lindelof, P. E., J. Borggreen, A. Jensen, J. Nyg?rd, and P. R. Poulsen. "Electron Spin in Single Wall Carbon Nanotubes." Physica Scripta T102, no. 1 (2002): 22. http://dx.doi.org/10.1238/physica.topical.102a00022.

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16

Barnaś, J., J. Martinek, G. Michałek, B. R. Bułka, and A. Fert. "Spin effects in ferromagnetic single-electron transistors." Physical Review B 62, no. 18 (2000): 12363–73. http://dx.doi.org/10.1103/physrevb.62.12363.

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17

Field, Ryan L., Lai Chung Liu, Yifeng Jiang, Wojciech Gawelda, Cheng Lu, and R. J. Dwayne Miller. "Ultrafast spin crossover in a single crystal." EPJ Web of Conferences 205 (2019): 07009. http://dx.doi.org/10.1051/epjconf/201920507009.

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Femtosecond spectroscopy and electron diffraction are used to characterize spin crossover in single crystal iron(II)-tris(bipyridine)-bis(hexafluorophosphate). The high-spin lifetime is reduced compared to in solution. Preliminary electron diffraction experiments show evidence of ultrafast Fe-N bond elongation associated with spin crossover and the subsequent molecular reorganization resulting from vibrational cooling.

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18

Ferraro, Elena, and Marco De Michielis. "Bandwidth-Limited and Noisy Pulse Sequences for Single Qubit Operations in Semiconductor Spin Qubits." Entropy 21, no. 11 (2019): 1042. http://dx.doi.org/10.3390/e21111042.

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Spin qubits are very valuable and scalable candidates in the area of quantum computation and simulation applications. In the last decades, they have been deeply investigated from a theoretical point of view and realized on the scale of few devices in the laboratories. In semiconductors, spin qubits can be built confining the spin of electrons in electrostatically defined quantum dots. Through this approach, it is possible to create different implementations: single electron spin qubit, singlet–triplet spin qubit, or a three-electron architecture, e.g., the hybrid qubit. For each qubit type, we study the single qubit rotations along the principal axis of Bloch sphere including the mandatory non-idealities of the control signals that realize the gate operations. The realistic transient of the control signal pulses are obtained by adopting an appropriate low-pass filter function. In addition. the effect of disturbances on the input signals is taken into account by using a Gaussian noise model.

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19

Bojanowski, Bohdan, and Sławomir Kaczmarek. "Electron spin resonance of FeVO4." Materials Science-Poland 32, no. 2 (2014): 188–92. http://dx.doi.org/10.2478/s13536-013-0192-7.

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AbstractWe report on electron spin resonance (ESR) investigations of a FeVO4 single crystal. Temperature and angular dependences of ESR resonance positions were measured and calculated in temperature range of 35–100 K. The spectra show rich angular dependences of the linewidth, the shape and the resonance field. They consist of a single broad line with asymmetric distortion. Due to the low symmetry of the crystal lattice this distortion can be explained by taking into account the influence of non diagonal dynamic susceptibility.

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20

WU, YIN-ZHONG, WEI-MIN ZHANG, and CHOPIN SOO. "QUANTUM COMPUTATION BASED ON ELECTRON SPIN QUBITS WITHOUT SPIN-SPIN INTERACTION." International Journal of Quantum Information 03, supp01 (2005): 155–62. http://dx.doi.org/10.1142/s0219749905001341.

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Using electron spin states in a unit cell of three semiconductor quantum dots as qubit states, a scalable quantum computation scheme is advocated without invoking qubit-qubit interactions. Single electron tunneling technology and coherent quantum-dot cellular automata architecture are used to generate an ancillary charge entangled state which is then converted into spin entangled state. Without using charge measurement and ancillary qubits, we demonstrate universal quantum computation based on free electron spin and coherent quantum-dot cellular automata.

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21

Turro, Nicholas J., and Igor V. Khudyakov. "Single-phase primary electron spin polarization transfer in spin-trapping reactions." Chemical Physics Letters 193, no. 6 (1992): 546–52. http://dx.doi.org/10.1016/0009-2614(92)85846-3.

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22

BERG, A., D. WEISS, K. V. KLITZING, and R. NÖTZEL. "SPIN SPLITTING IN A TWO DIMENSIONAL ELECTRON SYSTEM DETERMINED BY NUCLEAR MAGNETIC RELAXATION AND MAGNETOTRANSPORT ACTIVATION MEASUREMENTS." International Journal of Modern Physics B 07, no. 01n03 (1993): 474–79. http://dx.doi.org/10.1142/s0217979293000998.

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The spin splitting observed in two-dimensional electron systems at high magnetic fields is not only determined by the single-electron Zeeman energy but also by many-particle effects. Electron-electron interaction results in an enhanced g-factor which can be described by the exchange part of the Coulomb interaction. Nuclear spin lattice relaxation experiments analysing the Overhauser Shift in Electron Spin Resonance (ESR) measurements reveal that the exchange term is dominant. The spin splitting is strongly dependent on magnetic field and temperature. Numerical simulations enable the quantitative determination of the exchange part of the spin split energy. Transport activation measurements verify that the exchange part is proportional to the spin polarization of the electrons.

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23

Bae, Y., K. Yang, P. Willke, T. Choi, A. J. Heinrich, and C. P. Lutz. "Enhanced quantum coherence in exchange coupled spins via singlet-triplet transitions." Science Advances 4, no. 11 (2018): eaau4159. http://dx.doi.org/10.1126/sciadv.aau4159.

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Manipulation of spin states at the single-atom scale underlies spin-based quantum information processing and spintronic devices. These applications require protection of the spin states against quantum decoherence due to interactions with the environment. While a single spin is easily disrupted, a coupled-spin system can resist decoherence by using a subspace of states that is immune to magnetic field fluctuations. Here, we engineered the magnetic interactions between the electron spins of two spin-1/2 atoms to create a “clock transition” and thus enhance their spin coherence. To construct and electrically access the desired spin structures, we use atom manipulation combined with electron spin resonance (ESR) in a scanning tunneling microscope. We show that a two-level system composed of a singlet state and a triplet state is insensitive to local and global magnetic field noise, resulting in much longer spin coherence times compared with individual atoms. Moreover, the spin decoherence resulting from the interaction with tunneling electrons is markedly reduced by a homodyne readout of ESR. These results demonstrate that atomically precise spin structures can be designed and assembled to yield enhanced quantum coherence.

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24

KÜMMELL, T., M. GHALI, J. HUANG, et al. "ELECTRICAL INJECTION AND OPTICAL READOUT OF SPIN STATES IN A SINGLE QUANTUM DOT." International Journal of Modern Physics B 23, no. 12n13 (2009): 2826–35. http://dx.doi.org/10.1142/s0217979209062402.

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We demonstrate electrically driven spin injection into a single semiconductor quantum dot. Spin polarized electrons are transferred from a diluted magnetic semiconductor ( ZnMnSe ) into InAs quantum dots embedded into GaAs barriers. The spin information can be extracted directly from the polarization degree of the electroluminescence signal stemming from an individual quantum dot. By slightly modifying the device design, we demonstrate a concept to electrically charge the quantum dot by a spin polarized electron and present a simple way to probe this spin state optically.

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25

Mądzik, Mateusz T., Thaddeus D. Ladd, Fay E. Hudson, et al. "Controllable freezing of the nuclear spin bath in a single-atom spin qubit." Science Advances 6, no. 27 (2020): eaba3442. http://dx.doi.org/10.1126/sciadv.aba3442.

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The quantum coherence and gate fidelity of electron spin qubits in semiconductors are often limited by nuclear spin fluctuations. Enrichment of spin-zero isotopes in silicon markedly improves the dephasing time T2*, which, unexpectedly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom 31P qubit in enriched 28Si, we show that the abnormally long T2* is due to the freezing of the dynamics of the residual 29Si nuclei, caused by the electron-nuclear hyperfine interaction. Inserting a waiting period when the electron is controllably removed unfreezes the nuclear dynamics and restores the ergodic T2* value. Our conclusions are supported by a nearly parameter-free modeling of the 29Si nuclear spin dynamics, which reveals the degree of backaction provided by the electron spin. This study clarifies the limits of ergodic assumptions in nuclear bath dynamics and provides previously unidentified strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors.

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26

Anders, Jens, Alexander Angerhofer, and Giovanni Boero. "K-band single-chip electron spin resonance detector." Journal of Magnetic Resonance 217 (April 2012): 19–26. http://dx.doi.org/10.1016/j.jmr.2012.02.003.

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27

Alves, F. M., G. E. Marques, V. López-Richard, and C. Trallero-Giner. "Spin–orbit effects in single electron quantum rings." Semiconductor Science and Technology 22, no. 4 (2007): 301–6. http://dx.doi.org/10.1088/0268-1242/22/4/001.

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28

Korotkov, Alexander N., and V. I. Safarov. "Nonequilibrium spin distribution in a single-electron transistor." Physical Review B 59, no. 1 (1999): 89–92. http://dx.doi.org/10.1103/physrevb.59.89.

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29

Pasquini, B., and M. Vanderhaeghen. "Single spin asymmetries in elastic electron-nucleon scattering." European Physical Journal A 24, S2 (2005): 29–32. http://dx.doi.org/10.1140/epjad/s2005-04-005-3.

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30

Yalcin, T., and G. Boero. "Single-chip detector for electron spin resonance spectroscopy." Review of Scientific Instruments 79, no. 9 (2008): 094105. http://dx.doi.org/10.1063/1.2969657.

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31

Barfuss, A., J. Teissier, E. Neu, A. Nunnenkamp, and P. Maletinsky. "Strong mechanical driving of a single electron spin." Nature Physics 11, no. 10 (2015): 820–24. http://dx.doi.org/10.1038/nphys3411.

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32

Hai, Pham Nam, Satoshi Sugahara, and Masaaki Tanaka. "Reconfigurable Logic Gates Using Single-Electron Spin Transistors." Japanese Journal of Applied Physics 46, no. 10A (2007): 6579–85. http://dx.doi.org/10.1143/jjap.46.6579.

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33

Pla, Jarryd J., Kuan Y. Tan, Juan P. Dehollain, et al. "A single-atom electron spin qubit in silicon." Nature 489, no. 7417 (2012): 541–45. http://dx.doi.org/10.1038/nature11449.

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34

Angappane, S., M. Pattabiraman, G. Rangarajan, and K. Sethupathi. "Electron spin resonance study of Nd0.7Sr0.3MnO3 single crystals." Journal of Applied Physics 97, no. 10 (2005): 10H705. http://dx.doi.org/10.1063/1.1846613.

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35

Jones, G. M., B. H. Hu, C. H. Yang, M. J. Yang, and Y. B. Lyanda-Geller. "Enhancement-mode quantum transistors for single electron spin." Physica E: Low-dimensional Systems and Nanostructures 34, no. 1-2 (2006): 612–15. http://dx.doi.org/10.1016/j.physe.2006.03.041.

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36

Godfrin, C., S. Lumetti, H. Biard, et al. "Microwave-assisted reversal of a single electron spin." Journal of Applied Physics 125, no. 14 (2019): 142801. http://dx.doi.org/10.1063/1.5064593.

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37

Yang, Ciann-Dong. "On modeling and visualizing single-electron spin motion." Chaos, Solitons & Fractals 30, no. 1 (2006): 41–50. http://dx.doi.org/10.1016/j.chaos.2006.01.116.

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38

Jain, Manu. "Electron Spin Resonance Of Vo2+ In Likso4 Single Crystals." Zeitschrift für Naturforschung A 59, no. 7-8 (2004): 488–90. http://dx.doi.org/10.1515/zna-2004-7-813.

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Electron spin resonance of VO2+ doped in LiKSO4 single crystals has been studied at 295 K, using an X-band spectrometer. Three sites have been observed. VO2+ enters the lattice at Li and K substitutional sites. The ESR spectra have been analysed and spin-Hamiltonian parameters evaluated. PACS: 76.30 F

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39

Delgado, F., R. Aguado, and J. Fernández-Rossier. "Probing a single nuclear spin in a silicon single electron transistor." Applied Physics Letters 101, no. 7 (2012): 072407. http://dx.doi.org/10.1063/1.4746260.

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40

Takagahara, T. "Theory of unitary spin rotation and spin-state tomography for a single electron and two electrons." Journal of the Optical Society of America B 27, no. 6 (2010): A46. http://dx.doi.org/10.1364/josab.27.000a46.

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41

Matheoud, Alessandro V., Nergiz Sahin, and Giovanni Boero. "A single chip electron spin resonance detector based on a single high electron mobility transistor." Journal of Magnetic Resonance 294 (September 2018): 59–70. http://dx.doi.org/10.1016/j.jmr.2018.07.002.

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42

Liu, Jia, Song Wang, and Xiaohong Du. "Pumped Spin-Current in Single Quantum Dot with Spin-Dependent Electron Temperature." International Journal of Theoretical Physics 55, no. 9 (2016): 4036–43. http://dx.doi.org/10.1007/s10773-016-3032-9.

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43

Asgari, Sommayeh, and Rahim Faez. "Reduced Master Equation for Modeling of Ferromagnetic Single-Electron Transistor." Applied Mechanics and Materials 110-116 (October 2011): 3103–10. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.3103.

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In this paper, the reduced master equation which is a fast simulation method of spin dependent transport in ferromagnetic single electron transistors is presented, for first time. This simulation method follows steady state master equation in which all charge states of the system are considered, whereas charge states are decreased in reduced master equation. This method is based on two degrees of electron freedom which are charge and spin. This is applied in the condition that orthodox tunneling theory is applicable to calculate the tunneling rate of electrons through barriers. The comparison between the I-V characteristics of a ferromagnetic single-electron transistor by following the reduced and full master equation methods for different main parameters of these transistors show that the results are exactly the same at low bias voltages. Consequently, the reduced master equation method is not only more simplified and improves the speed of numerical simulation, but also the modeling results are as accurate as the results of the full maser equation method at low bias conditions.

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44

Ghosh, Bahniman, Saurabh Katiyar, and Akshaykumar Salimath. "Role of electron-electron scattering on spin transport in single layer graphene." AIP Advances 4, no. 1 (2014): 017116. http://dx.doi.org/10.1063/1.4862674.

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45

Ghosh, Bahniman, and Aayush Gupta. "Spin Transport in Single Layer Germanene: The Role of Electron Electron Scattering." Journal of Low Power Electronics 10, no. 3 (2014): 365–67. http://dx.doi.org/10.1166/jolpe.2014.1347.

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46

Budak, Satιlmιş, Fikret Yιldιz, Mustafa Özdemir, and Bekir Aktaş. "Electron spin resonance studies on single crystalline Fe3O4 films." Journal of Magnetism and Magnetic Materials 258-259 (March 2003): 423–26. http://dx.doi.org/10.1016/s0304-8853(02)01083-1.

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47

Wrachtrup, J., C. von Borczyskowski, J. Bernard, R. Brown, and M. Orrit. "Hahn echo experiments on a single triplet electron spin." Chemical Physics Letters 245, no. 2-3 (1995): 262–67. http://dx.doi.org/10.1016/0009-2614(95)00983-b.

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48

Guy, D. R. P., E. A. Marseglia, and S. C. Guy. "Electron Spin Resonance In CuCrS2 and CuCrSe2 Single Crystals." Molecular Crystals and Liquid Crystals 121, no. 1-4 (1985): 165–68. http://dx.doi.org/10.1080/00268948508074855.

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49

Mitra, Sambhu Nath, and K. G. Chakraborty. "Heisenberg spin model with single and double electron exchange." Journal of Physics: Condensed Matter 9, no. 8 (1997): 1887. http://dx.doi.org/10.1088/0953-8984/9/8/019.

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50

Buchachenko, Anatolii L., Fedor I. Dalidchik, Sergei A. Kovalevskii, and Boris R. Shub. "Paramagnetic resonance and detection of a single electron spin." Russian Chemical Reviews 70, no. 7 (2001): 535–41. http://dx.doi.org/10.1070/rc2001v070n07abeh000652.

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