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Dissertations / Theses on the topic 'Single event effect (SEE)'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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1

Landowski, Matthew. "DESIGN AND MODELING OF RADIATION HARDENED LATERAL POWER MOSFETS." Master's thesis, University of Central Florida, 2009. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2823.

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Galactic-cosmic-rays (GCR) exist in space from unknown origins. A cosmic ray is a very high energy electron, proton, or heavy ion. As a GCR transverses a power semiconductor device, electron-hole-pairs (ehps) are generated along the ion track. Effects from this are referred to as single-event-effects (SEEs). A subset of a SEE is single-event burnout (SEB) which occurs when the parasitic bipolar junction transistor is triggered leading to thermal runaway. The failure mechanism is a complicated mix of photo-generated current, avalanche generated current, and activation of the inherent parasitic

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2

Manuzzato, Andrea. "Single Event Effects On FPGAs." Doctoral thesis, Università degli studi di Padova, 2010. http://hdl.handle.net/11577/3422247.

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Field Programmable Gate Arrays, FPGAs, since their introduction on the market presented a very innovative way of implementing hardware designs. The fundamental property of these integrated circuits is the capability of a user's customization after manufacturing. An FPGA’s general architecture is composed of configurable elements that can be programmed to implement basic combinatorial and/or sequential logic. Configurable connection architecture can wire the configurable elements to implement complex circuits. Furthermore, input/output blocks manage interfacing with the external world, giving a

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3

Bosser, Alexandre Louis. "Single-event effects from space and atmospheric radiation in memory components." Thesis, Montpellier, 2017. http://www.theses.fr/2017MONTS085/document.

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Les composants mémoires sont omniprésents en électronique : ils sont utilisés pour stocker des données, et sont présents dans tous les champs d’application - industriel, automobile, aérospatial, grand public et télécommunications, entre autres. Les technologies mémoires ont connu une évolution constante depuis la création de la première mémoire vive statique (Static Random-Access Memory, SRAM) à la fin des années 60. Les besoins toujours plus importants en termes de performance, de capacité et d’économie d’énergie poussent à une miniaturisation constante de ces composants : les mémoires modern

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4

Phillips, Stanley David. "Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45854.

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Field-effect transistor technologies have been critical building blocks for satellite systems since their introduction into the microelectronics industry. The extremely high cost of launching payloads into orbit necessitates systems to have small form factor, ultra low-power consumption, and reliable lifetime operation, while satisfying the performance requirements of a given application. Silicon-based complementary metal-oxide-semiconductors (Si CMOS) have traditionally been able to adequately meet these demands when coupled with radiation hardening techniques that have been developed over ye

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5

Gnawali, Krishna Prasad. "EMERGING MEMORY-BASED DESIGNS AND RESILIENCY TO RADIATION EFFECTS IN ICS." OpenSIUC, 2020. https://opensiuc.lib.siu.edu/dissertations/1863.

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The performance of a modern computing system is improving with technology scaling due to advancements in the modern semiconductor industry. However, the power efficiency along with reliability does not scale linearly with performance efficiency. High leakage and standby power in sub 100 nm technology are critical challenges faced by circuit designers. Recent developments in device physics have shown that emerging non-volatile memories are very effective in reducing power dissipation because they eliminate stand by power and exhibit almost zero leakage powerThis dissertation studies the use of

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6

Cannon, Matthew Joel. "Improving the Single Event Effect Response of Triple Modular Redundancy on SRAM FPGAs Through Placement and Routing." BYU ScholarsArchive, 2019. https://scholarsarchive.byu.edu/etd/7551.

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Triple modular redundancy (TMR) with repair is commonly used to improve the reliability of systems. TMR is often employed for circuits implemented on field programmable gate arrays (FPGAs) to mitigate the radiation effects of single event upsets (SEUs). This has proven to be an effective technique by improving a circuit's sensitive cross-section by up to 100x. However, testing has shown that the improvement offered by TMR is limited by upsets in single configuration bits that cause TMR to fail.This work proposes a variety of mitigation techniques that improve the effectiveness of TMR on FPGAs.

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Torrens, Caldentey Gabriel. "Estudio de eventos transitorios inducidos por radiación en memorias SRAM nanométricas." Doctoral thesis, Universitat de les Illes Balears, 2012. http://hdl.handle.net/10803/97291.

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Los efectos de la radiación en circuitos electrónicos se conocen desde los comienzos de la carrera espacial en los años 60, pues fuera de la atmósfera terrestre se está expuesto a niveles más altos de radiación que en la superficie. Sin embargo, el escalado de la tecnología electrónica ha conllevado un aumento de su susceptibilidad a la radiación, que puede desembocar en errores de funcionamiento incluso a nivel de tierra. Esta tesis estudia un efecto de la radiación, en memorias SRAM (Static Random Access Memory), denominado evento transitorio, que se caracteriza por corromper los datos almac

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8

Ramos, Vargas Pablo Francisco. "Evaluation de la sensibilité face aux SEE et méthodologie pour la prédiction de taux d’erreurs d’applications implémentées dans des processeurs Multi-cœur et Many-cœur." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT022/document.

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La présente thèse vise à évaluer la sensibilité statique et dynamique face aux SEE de trois dispositifs COTS différents. Le premier est le processeur multi-cœurs P2041 de Freescale fabriqué en technologie 45nm SOI qui met en œuvre ECC et la parité dans leurs mémoires cache. Le second est le processeur multifonction Kalray MPPA-256 fabriqué en technologie CMOS 28nm TSMC qui intègre 16 clusters de calcul chacun avec 16 cœurs, et met en œuvre ECC dans ses mémoires statiques et parité dans ses mémoires caches. Le troisième est le microprocesseur Adapteva E16G301 fabriqué en 65nm CMOS processus qui

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9

Chenet, Cristiano Pegoraro. "Análise de soft errors em conversores analógico-digitais e mitigação utilizando redundância e diversidade." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2015. http://hdl.handle.net/10183/127693.

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Este trabalho aborda os soft errors em conversores de dados analógico-digitais e a mitigação usando redundância e diversidade. Nas tecnologias CMOS recentes, os efeitos singulares (SEEs, Single Event Effects) são um grupo de efeitos da radiação espacial que afetam a confiabilidade e disponibilidade dos sistemas. Os soft errors são SEEs que não danificam diretamente o sistema e podem ser posteriormente corrigidos. Seus principais subgrupos são o Single Event Upset (SEU), o Single Event Transient (SET) e o Single Event Functional Interrupt (SEFI). Uma das técnicas em nível de sistema amplamente

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10

Malherbe, Victor. "Multi-scale modeling of radiation effects for emerging space electronics : from transistors to chips in orbit." Thesis, Aix-Marseille, 2018. http://www.theses.fr/2018AIXM0753/document.

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En raison de leur impact sur la fiabilité des systèmes, les effets du rayonnement cosmique sur l’électronique ont été étudiés dès le début de l’exploration spatiale. Néanmoins, de récentes évolutions industrielles bouleversent les pratiques dans le domaine, les technologies standard devenant de plus en plus attrayantes pour réaliser des circuits durcis aux radiations. Du fait de leurs fréquences élevées, des nouvelles architectures de transistor et des temps de durcissement réduits, les puces fabriquées suivant les derniers procédés CMOS posent de nombreux défis. Ce travail s’attelle donc à la

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11

Malherbe, Victor. "Multi-scale modeling of radiation effects for emerging space electronics : from transistors to chips in orbit." Electronic Thesis or Diss., Aix-Marseille, 2018. http://www.theses.fr/2018AIXM0753.

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En raison de leur impact sur la fiabilité des systèmes, les effets du rayonnement cosmique sur l’électronique ont été étudiés dès le début de l’exploration spatiale. Néanmoins, de récentes évolutions industrielles bouleversent les pratiques dans le domaine, les technologies standard devenant de plus en plus attrayantes pour réaliser des circuits durcis aux radiations. Du fait de leurs fréquences élevées, des nouvelles architectures de transistor et des temps de durcissement réduits, les puces fabriquées suivant les derniers procédés CMOS posent de nombreux défis. Ce travail s’attelle donc à la

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12

Shea, Patrick Michael. "Lateral power MOSFETs hardened against single event radiation effects." Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4705.

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The underlying physical mechanisms of destructive single event effects (SEE) from heavy ion radiation have been widely studied in traditional vertical double-diffused power MOSFETs (VDMOS). Recently lateral double-diffused power MOSFETs (LDMOS), which inherently provide lower gate charge than VDMOS, have become an attractive option for MHz-frequency DC-DC converters in terrestrial power electronics applications. There are growing interests in extending the LDMOS concept into radiation-hard space applications. Since the LDMOS has a device structure considerably different from VDMOS, the well

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13

Johnson, Gregory Howard. "Analytical modeling of single-event burnout of power transistors." Diss., The University of Arizona, 1992. http://hdl.handle.net/10150/185988.

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When electronic components are to be used in systems destined for operation in the extraterrestrial environment, one must be concerned about the effects of the naturally occurring radiation in outer space. For example, power metal-oxide-semiconductor-field-effect transistors (MOSFETs) and power bipolar junction transistors (BJTs) are susceptible to a phenomenon called single-event burnout (SEB) which may result from bombardment by heavy ions originating from the nuclear reactions within the sun and other stars. SEB is a catastrophic failure mechanism initiated by the passage of a heavy ion thr

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14

Santos, André Flores dos. "Análise do uso de redundância em circuitos gerados por síntese de alto nível para FPGA programado por SRAM sob falhas transientes." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/178392.

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Este trabalho consiste no estudo e análise da suscetibilidade a efeitos da radiação em projetos de circuitos gerados por ferramenta de Síntese de Alto Nível para FPGAs (Field Programmable Gate Array), ou seja, circuitos programáveis e sistemas em chip, do inglês System-on-Chip (SOC). Através de um injetor de falhas por emulação usando o ICAP (Internal Configuration Access Port) localizado dentro do FPGA é possível injetar falhas simples ou acumuladas do tipo SEU (Single Event Upset), definidas como perturbações que podem afetar o funcionamento correto do dispositivo através da inversão de um b

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15

Al, Youssef Ahmad. "Étude par modélisation des événements singuliers (SET/SEU/SEL) induits par l’environnement radiatif dans les composants électroniques." Thesis, Toulouse, ISAE, 2017. http://www.theses.fr/2017ESAE0021/document.

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L’environnement radiatif spatial est particulièrement critique pour la fiabilité des circuits intégrés et systèmes électroniques embarqués. Cet environnement chargé en particules énergétiques (proton, électron, ions lourds, etc) peut conduire à des pannes transitoires (SET), ou permanentes (SEU) et dans certains cas destructives (type Latchup, SEL) dans les dispositifs embarqués. L'effet d'une seule particule est identifié comme un événement singulier (SEE). Les contraintes imposées par l'intégration technologique poussent les fabricants micro-électroniques à prendre en considération la vulnér

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16

Chen, Chen. "Evaluating Time-varying Effect in Single-type and Multi-type Semi-parametric Recurrent Event Models." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/64371.

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This dissertation aims to develop statistical methodologies for estimating the effects of time-fixed and time-varying factors in recurrent events modeling context. The research is motivated by the traffic safety research question of evaluating the influence of crash on driving risk and driver behavior. The methodologies developed, however, are general and can be applied to other fields. Four alternative approaches based on various data settings are elaborated and applied to 100-Car Naturalistic Driving Study in the following Chapters. Chapter 1 provides a general introduction and background o

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17

Uznanski, Slawosz. "Monte-Carlo simulation and contribution to understanding of Single-Event-Upset (SEU) mechanisms in CMOS technologies down to 20nm technological node." Thesis, Aix-Marseille 1, 2011. http://www.theses.fr/2011AIX10222/document.

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L’augmentation de la densité et la réduction de la tension d’alimentation des circuits intégrés rend la contribution des effets singuliers induits par les radiations majoritaire dans la diminution de la fiabilité des composants électroniques aussi bien dans l’environnement radiatif spatial que terrestre. Cette étude porte sur la modélisation des mécanismes physiques qui conduisent à ces aléas logiques (en anglais "Soft Errors"). Ces modèles sont utilisés dans une plateforme de simulation,appelée TIARA (Tool suIte for rAdiation Reliability Assessment), qui a été développée dans le cadre de cett

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18

LANGE, THOMAS. "New Reliable Operation Infrastructure for Dynamic, High-dependability Applications." Doctoral thesis, Politecnico di Torino, 2021. http://hdl.handle.net/11583/2935598.

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19

Godwin, Ellen M. "Long-term effect of single event multiple level orthopedic surgery on the functional classification of children with cerebral palsy." NSUWorks, 2005. http://nsuworks.nova.edu/hpd_pt_stuetd/29.

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20

Berner, Heiko. "The selection and single event upset testing of a DSP processor for a LEO satellite." Thesis, Stellenbosch : Stellenbosch University, 2002. http://hdl.handle.net/10019.1/53171.

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Thesis (MScEng)--University of Stellenbosch, 2002.<br>ENGLISH ABSTRACT: After successful use of a DSP processor onboard the SUNSAT satellite, the need arose for a faster floating-point processor. A list of possible processors was generated from various selection criteria. Two suitable DSP processors were chosen, and because no radiation information was available for one of them, the decision was made to perform radiation tests on it. The procedures used to test the processor are described in detail so the same methods can be used for future radiation tests. An error detection and correct

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21

DU, BOYANG. "Fault Tolerant Electronic System Design." Doctoral thesis, Politecnico di Torino, 2016. http://hdl.handle.net/11583/2644047.

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Due to technology scaling, which means reduced transistor size, higher density, lower voltage and more aggressive clock frequency, VLSI devices may become more sensitive against soft errors. Especially for those devices used in safety- and mission-critical applications, dependability and reliability are becoming increasingly important constraints during the development of system on/around them. Other phenomena (e.g., aging and wear-out effects) also have negative impacts on reliability of modern circuits. Recent researches show that even at sea level, radiation particles can still induce soft

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22

Aguirre, Fernando Rodrigues. "Estudo sobre distribuição de cargas em semicondutores sujeitos a radiação ionizante." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-13032017-113040/.

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Os efeitos da radiação ionizante em dispositivos eletrônicos é uma preocupação crescente na tecnologia de semicondutores, especialmente devido à contínua redução dos dispositivos e ainda maior, quando são destinados para uso em ambientes agressivos com alta radiação, tais como missões espaciais, aceleradores de partículas ou reatores nucleares. Dentre os vários efeitos causados pela radiação ionizante em dispositivos eletrônicos está aquele devido à Dose Acumulada (Total Ionizing Dose - TID), o qual a acumulação de danos de radiação no dispositivo muda seu funcionamento normal. O TID causado p

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Phillips, Stanley D. "Developing radiation hardening by design." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29640.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Cressler, John; Committee Member: Citrin, David; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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Silvestrin, Luca. "Characterization of Electronic Circuits with the SIRAD IEEM: Developments and First Results." Doctoral thesis, Università degli studi di Padova, 2011. http://hdl.handle.net/11577/3421637.

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When an energetic ion strikes a microelectronic device it induces current transients that may lead to a variety of undesirable Single Event Effects (SEE). An important part of the activity of the SIRAD heavy ion facility at the 15 MV Tandem accelerator of the INFN Laboratories of Legnaro (Italy) concerns SEE studies of microelectronic devices destined for radiation hostile environments. An axial Ion Electron Emission Microscope (IEEM) is working at the SIRAD irradiation facility. It is devised to provide a micrometric sensitivity map of Single Event Effects of an electronic device. The IEEM

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25

Tambara, Lucas Antunes. "Caracterização de circuitos programáveis e sistemas em chip sob radiação." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2013. http://hdl.handle.net/10183/86477.

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Este trabalho consiste em um estudo acerca dos efeitos da radiação em circuitos programáveis e sistemas em chip, do inglês System-on-Chip (SoC), baseados em FPGAs (Field-Programmable Gate Array). Dentre os diversos efeitos que podem ensejar falhas nos circuitos integrados, destacam-se a ocorrência de Single Event Effects (SEEs), Efeitos Transitórios em tradução livre, e a Dose Total Ionizante, do inglês Total Ionizing Dose (TID). SEEs podem ocorrer em razão da incidência de nêutrons originários de interações de raios cósmicos com a atmosfera terrestre, íons pesados provenientes do espaço e pró

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Assis, Thiago Rocha de. "Analysis of transistor sizing and folding effectiveness to mitigate soft errors." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2009. http://hdl.handle.net/10183/31135.

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Este trabalho apresenta uma avaliação da eficiência do dimensionamento e particionamento (folding) de transistores para a eliminação ou redução de efeitos de radiação. Durante o trabalho foi construído um modelo de transistor tipo-n MOSFET para a tecnologia 90nm, utilizando modelos preditivos. O transistor 3D modelado foi comparado com o modelo de transistor elétrico PTM level 54 da Arizona State University e os resultados mostraram uma coerência entre os dispositivos. Este transistor modelado foi irradiado por uma série de partículas que caracterizam ambientes terrestres e espaciais. Foi desc

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AZIMI, SARAH. "Digital design techniques for dependable High-Performance Computing." Doctoral thesis, Politecnico di Torino, 2019. http://hdl.handle.net/11583/2734213.

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Amutkan, Ozge. "Space Radiation Environment And Radiation Hardness Assurance Tests Of Electronic Components To Be Used In Space Missions." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612238/index.pdf.

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Space radiation is significantly harmful to electronic Components. The operating time, duration and orbit of the space mission are affected by the characteristic of the radiation environment. The aging and the performance of the electronic components are modified by radiation. The performance of the space systems such as electronic units, sensors, power and power subsystem units, batteries, payload equipments, communication units, remote sensing instruments, data handling units, externally located units, and propulsion subsystem units is determined by the properly functioning of various electr

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29

Weulersse, Cécile. "Développement et validation d’outils Monte-Carlo pour la prédiction des basculements logiques induits par les radiations dans les mémoires Sram très largement submicroniques." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20221.

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Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les systèmes électroniques. Dans le cas d'applications critiques nécessitant une très haute fiabilité, il est primordial de répondre aux impératifs de sûreté de fonctionnement. Pour s'en assurer et, le cas échéant, dimensionner les protections de manière adéquate, il est nécessaire de disposer d'outils permettant d'évaluer la sensibilité de l'électronique vis-à-vis de ces perturbations.L'objectif de ce travail est le développement d'outils à destination des ingénieurs pour la prédiction des aléas lo

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Diestelhorst, Ryan M. "Silicon-germanium BiCMOS device and circuit design for extreme environment applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28180.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen.

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Lourenco, Nelson Estacio. "An assessment of silicon-germanium BiCMOS technologies for extreme environment applications." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45959.

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This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications.

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Renard, Sébastien. "Évaluation des effets des neutrons atmosphériques sur l'électronique embarqué en avionique et recherche de solutions de durcissement." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2013. http://tel.archives-ouvertes.fr/tel-01015741.

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Cette thèse s'intéresse aux effets des particules présentent naturellement dans l'atmosphère. L'étude se focalise principalement sur l'impact des neutrons sur des composants électroniques fortement intégrés. La première partie détaille l'environnement radiatif naturel ainsi que les moyens de tests existants. Les technique de test sous faisceau laser sont mise en avant. La seconde partie s'intéresse au développement d'une plateforme de test de mémoires à base de FPGA programmée en VHDL. Les conceptions matérielle et logicielle sont explicitées. Une plateforme de test pour microprocesseur est ég

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Najafizadeh, Laleh. "Design of analog circuits for extreme environment applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31796.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Shen, Shyh-Chiang; Committee Member: Steffes, Paul; Committee Member: Zhou, Hao Min. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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"Supply Voltage Dependence of Heavy Ion Induced SEEs on 65nm CMOS Bulk SRAMs." Thesis, 2015. http://hdl.handle.net/10388/ETD-2015-06-2088.

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The power consumption of Static Random Access Memory (SRAM) has become an important issue for modern integrated circuit design, considering the fact that they occupy large area and consume significant portion of power consumption in modern nanometer chips. SRAM operating in low power supply voltages has become an effective approach in reducing power consumption. Therefore, it is essential to experimentally characterize the single event effects (SEE) of hardened and unhardened SRAM cells to determine their appropriate applications, especially when a low supply voltage is preferred. In this thes

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"Study of Layout Techniques in Dynamic Logic Circuitry for Single Event Effect Mitigation." Thesis, 2015. http://hdl.handle.net/10388/ETD-2015-09-2253.

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Dynamic logic circuits are highly suitable for high-speed applications, considering the fact that they have a smaller area and faster transition. However, their application in space or other radiation-rich environments has been significantly inhibited by their susceptibility to radiation effects. This work begins with the basic operations of dynamic logic circuits, elaborates upon the physics underlying their radiation vulnerability, and evaluates three techniques that harden dynamic logic from the layout: drain extension, pulse quenching, and a proposed method. The drain extension method adds

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"SINGLE-EVENT EFFECT STUDY ON A DC/DC PWM USING MULTIPLE TESTING METHODOLOGIES." Thesis, 2015. http://hdl.handle.net/10388/ETD-2015-02-1953.

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As the technology advances, the feature size of the modern integrated circuits (ICs) has decreased dramatically to nanometer amplitude. On one hand, the shrink brings benefits, such as high speed and low power consumption per transistor. On the other hand, it poses a threat to the reliable operation of the ICs by the increased radiation sensitivity, such as single event effects (SEEs). For example, in 2010, a commercial-off-the-shelf (COTS) BiCMOS DC/DC pulse width modulator (PWM) IC was observed to be sensitive to neutrons on terrestrial real-time applications, where negative 6-μs glitches we

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De, Beer Johannes Scheepers. "The impact of single stock futures on the South African equity market." Diss., 2008. http://hdl.handle.net/10500/1339.

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Text in English with summaries in English and Afrikaans<br>The introduction of single stock futures to a market presents the opportunity to assess an individual company's response to futures trading directly, in contrast to the market-wide impact obtained from index futures studies. Thirty-eight South African companies were evaluated in terms of a possible price, volume, and volatility effect due to the initial trading of their respective single stock futures contracts. An event study revealed that SSF trading had little impact on the underlying share prices. A normalised volume compariso

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