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Journal articles on the topic 'SiO2 thin films'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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1

Pan, Yongqiang, Huan Liu, Zhuoman Wang, Jinmei Jia, and Jijie Zhao. "Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD." Coatings 11, no. 5 (2021): 510. http://dx.doi.org/10.3390/coatings11050510.

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SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction press
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2

Huang, Ziming, Jiaqi Duan, Minghan Li, Yanping Ma, and Hong Jiang. "Effect of SiO2 Layer Thickness on SiO2/Si3N4 Multilayered Thin Films." Coatings 14, no. 7 (2024): 881. http://dx.doi.org/10.3390/coatings14070881.

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Silicon nitride (Si3N4) materials are widely used in the electronics, optoelectronics, and semiconductor industries, with Si3N4 thin films exhibiting high densities, high dielectric constants, good insulation performance, and good thermal and chemical stability. However, direct deposition of Si3N4 thin films on glass can result in considerable tensile stress and cracking. In this study, magnetron sputtering was used to deposit a Si3N4 thin film on glass, and a silicon dioxide (SiO2) thin film was introduced to reduce the Si3N4 binding force and stress. The effect of the SiO2 layer thickness on
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3

Wang, Zhan Jie, and Yan Na Chen. "Effect of Substrate on Crystallization of Sol-Gel-Derived Pb(Zr0.52Ti0.48)O3 Thin Films by Microwave Annealing." Materials Science Forum 750 (March 2013): 212–15. http://dx.doi.org/10.4028/www.scientific.net/msf.750.212.

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Amorphous Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on LNO/SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by microwave irradiation in the microwave magnetic field. The crystalline phases and microstructures as well as ferroelectric property of the PZT films were investigated, and the effect of substrate on crystallization of PZT thin films heated by microwave annealing was discussed. The PZT films on LNO/SiO2/Si substrate show a highly (100)-preferred orientation, and better ferroelectric property than those on Pt/Ti/SiO2/Si substrate. The results demon
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4

Zhang, Weiguang, Jijun Li, Yongming Xing, et al. "Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation." Coatings 11, no. 1 (2020): 23. http://dx.doi.org/10.3390/coatings11010023.

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SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the depen
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5

Yamabe, Kikuo. "Thin thermally grown SiO2 films." Bulletin of the Japan Institute of Metals 28, no. 1 (1989): 14–21. http://dx.doi.org/10.2320/materia1962.28.14.

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6

JIANG, H., H. W. LIU, H. YU, F. GAO, J. M. LIU, and C. W. NAN. "DIELECTRIC BEHAVIORS OF ZnFe2O4 – SiO2 COMPOSITE THIN FILMS PREPARED BY SOL-GEL METHOD." International Journal of Modern Physics B 19, no. 15n17 (2005): 2682–86. http://dx.doi.org/10.1142/s0217979205031523.

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The dielectric property of ZnFe2O4 – SiO2 composite thin films deposited on Pt - Ti -SiO2- Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe2O4 nanoparticles embedded in the matrix of SiO2. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO2 thin films without too large dielectric loss enhancement.
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7

Zhang, Dan, Yifeng Hu, Haipeng You, et al. "High Reliability and Fast-Speed Phase-Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films." Advances in Materials Science and Engineering 2018 (June 21, 2018): 1–6. http://dx.doi.org/10.1155/2018/9693015.

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Sb70Se30/SiO2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO2/Si (100) substrates. The characteristics of Sb70Se30/SiO2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy bandgap. It is observed that the crystallization temperature, 10-year data retention, and resistance of Sb70Se30/SiO2 multilayer composite thin films exhibited a higher value, suggesting that Sb70Se30/SiO2 multilayer composite thin films have superior thermal stability. The AFM measurement suggests that
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8

Shen, Kai Bo, Huan Yang, Jian Liu, et al. "Fabrication and Characterization for Innate Super-Hydrophilic SiO2 Thin Films." Materials Science Forum 743-744 (January 2013): 377–81. http://dx.doi.org/10.4028/www.scientific.net/msf.743-744.377.

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Distinguished with photoinduced super-hydrophilic inorganic thin films, non-photoinduced innate super-hydrophilic SiO2 thin films were successfully fabricated in this work. The SiO2 sol was prepared by acid-base two-step sol-gel method. The mix solution containing SiO2 sol and polyethylene glycol (PEG) was coated on glass substrate and then went through thermal treatment to obtain innate super-hydrophilic SiO2 thin films. The films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and contact angle meter. Th
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9

Kim, Soyoung, Jung-Hwan In, Seon Hoon Kim, et al. "Study of High Transmittance of SiO2/Nb2O5 Multilayer Thin Films Deposited by Plasma-Assisted Reactive Magnetron Sputtering." Applied Sciences 13, no. 24 (2023): 13271. http://dx.doi.org/10.3390/app132413271.

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SiO2/Nb2O5 multilayer thin films were designed for the special application of an aviation lighting system emitting green light. For optical components in this system to meet requirements such as a high transmittance and durability, SiO2/Nb2O5 multilayer thin films of 60 individual layers were fabricated by a plasma-assisted reactive magnetron sputtering method. As a result, the transmittance spectra were confirmed to have a flat top surface and a square bandwidth. The transmittances of the SiO2/Nb2O5 multilayer thin films in the range of 500 nm to 550 nm was approximately 96.14%. The reason fo
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10

Zhang, Xiao-Ying, Yue Yang, Zhi-Xuan Zhang, et al. "Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers." Nanomaterials 11, no. 5 (2021): 1173. http://dx.doi.org/10.3390/nano11051173.

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In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and
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11

Yang, Li-Lan, Yi-Sheng Lai, J. S. Chen, P. H. Tsai, C. L. Chen, and C. Jason Chang. "Compositional Tailored Sol-Gel SiO2–TiO2 Thin Films: Crystallization, Chemical Bonding Configuration, and Optical Properties." Journal of Materials Research 20, no. 11 (2005): 3141–49. http://dx.doi.org/10.1557/jmr.2005.0393.

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Thin films of SiO2–TiO2 composite oxides with various SiO2:TiO2 compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium tetraisopropoxide (TTIP) as precursors. The composition, crystal structure, and chemical bonding configuration of the as-deposited and annealed SiO2–TiO2 thin films were analyzed using Rutherford backscattering spectrometry (RBS), glancing incident angle x-ray diffraction (GIAXRD) and Fourier transform infrared spectroscopy (FTIR), respectively. Optical properties of the films were characterized by spectroscopic ellipsometry and ult
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12

Bacherikov, YU Yu. "Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films." Semiconductor Physics Quantum Electronics and Optoelectronics 15, no. 1 (2012): 13–16. http://dx.doi.org/10.15407/spqeo15.01.013.

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13

YAKSHINSKIY, B. V., T. E. MADEY, and V. N. AGEEV. "THERMAL DESORPTION OF SODIUM ATOMS FROM THIN SiO2 Films." Surface Review and Letters 07, no. 01n02 (2000): 75–87. http://dx.doi.org/10.1142/s0218625x00000117.

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The adsorption and thermal desorption of Na from thin SiO2 films have been studied. X-ray photoelectron spectroscopy (XPS), angle-resolved XPS (ARXPS), low energy ion scattering (LEIS), temperature-programmed desorption (TPD), low energy electron diffraction (LEED) and work function measurements have been used to characterize the growth mechanism and properties of stoichiometric SiO2 films deposited onto a Re (0001) substrate. Upon deposition of Na onto SiO2 at 250 K, the first monolayer of Na exhibits ionic character, and evidence of metallic Na (plasmon features in XPS) is observed for highe
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14

Delph, T. J. "Intrinsic strain in SiO2 thin films." Journal of Applied Physics 83, no. 2 (1998): 786–92. http://dx.doi.org/10.1063/1.366759.

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15

Zhu, Bin, Ziaoguang Luo, and Changrong Xia. "Transparent conducting CeO2–SiO2 thin films." Materials Research Bulletin 34, no. 10-11 (1999): 1507–12. http://dx.doi.org/10.1016/s0025-5408(99)00185-3.

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16

Crupi, F., B. Neri, and S. Lombardo. "Pre-breakdown in thin SiO2 films." IEEE Electron Device Letters 21, no. 6 (2000): 319–21. http://dx.doi.org/10.1109/55.843163.

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17

Bosc, Florence, André Ayral, and Christian Guizard. "Mixed TiO2–SiO2 mesostructured thin films." Thin Solid Films 495, no. 1-2 (2006): 252–56. http://dx.doi.org/10.1016/j.tsf.2005.08.186.

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18

Brotzen, F. R., P. J. Loos, and D. P. Brady. "Thermal conductivity of thin SiO2 films." Thin Solid Films 207, no. 1-2 (1992): 197–201. http://dx.doi.org/10.1016/0040-6090(92)90123-s.

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19

Bellafiore, N., F. Pio, and C. Riva. "Thin SiO2 films nitrided in N2O." Microelectronics Journal 25, no. 7 (1994): 495–500. http://dx.doi.org/10.1016/0026-2692(94)90033-7.

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20

Ditali, A., and W. Black. "Activation energy of thin SiO2 films." Electronics Letters 28, no. 21 (1992): 2014. http://dx.doi.org/10.1049/el:19921291.

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21

Miyagi, Tomoaki, Yoshiro Takahashi, and Yasuki Akimoto. "Evaluation of photocatalytic activity, water contact angle, and annealing for TiO2 thin films deposited with mixed WOX–SiO2 thin films using radiofrequency sputtering." Journal of Applied Physics 133, no. 5 (2023): 055301. http://dx.doi.org/10.1063/5.0132929.

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A mixture of hydrophilic silicon dioxide (SiO2) and visible-light-reactive tungsten oxide (WOX) has the potential to improve the photocatalytic activity of conventional titanium dioxide (TiO2). This study deposits mixed WOX–SiO2 thin films on TiO2 surfaces by controlling the composition of WOX:SiO2 using radiofrequency sputtering to improve photocatalytic activity and hydrophilicity. The photocatalytic activity is evaluated via the degradation of a methylene blue solution, and hydrophilicity is measured using the water contact angle. In addition, the effect of annealing is determined at 400 °C
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22

Curran, Anya, Farzan Gity, Agnieszka Gocalinska, et al. "High Hole Mobility Polycrystalline GaSb Thin Films." Crystals 11, no. 11 (2021): 1348. http://dx.doi.org/10.3390/cryst11111348.

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In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating GaAs substrates are included as comparative samples. In all cases, the unintentionally doped GaSb is p-type, with a hole concentration in the range of 2 × 1016 to 2 × 1017 cm−3. Exceptional hole mobilities are measured for polycrystalline GaSb on SiO2 in the range of 9–66 cm2/Vs, exceeding the reported values for many other semiconductors grown at low t
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23

Zhang, Yun, Bo Ping Zhang, Li Shi Jiao, Xiang Yang Li, Hiroshi Masumoto, and Takashi Goto. "Microstructure and Optical Characterization of Au/SiO2 Nano-Composite Multilayer Films." Key Engineering Materials 336-338 (April 2007): 2575–78. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.2575.

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Au/SiO2 nano-composite multilayer thin films with different thickness were prepared on a quartz substrate by magnetron plasma sputtering. The microstructure, morphology and optical properties of the films were investigated by using TEM and optical absorption spectra. [Au/SiO2]×5 and [Au/SiO2] × 11 multilayer thin films have well-defined interface. The thickness of the multilayer was 60nm and 130 nm for the thin films with 5 and 11 layers, respectively. The optical absorption peaks due to the surface plasma resonance appeared at a wavelength of 560 nm for the both [Au/SiO2]×5 and [Au/SiO2]×11 t
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24

Chiu, Wei-Ming, Jhih-Siao Syu, Peir-An Tsai, and Jyh-Horng Wu. "Preparation and characterization of SiO2/fluoroalkyl-trialkoxysilane/2-hydroxyethyl methacrylate/trimethylolpropane triacrylate and SiO2/3-(trimethoxysilyl)propyl methacrylate/ 2-hydroxyethyl methacrylate/trimethylolpropane triacrylate coatings on glass substrates using the sol-gel method." Journal of Polymer Engineering 36, no. 3 (2016): 309–20. http://dx.doi.org/10.1515/polyeng-2015-0197.

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Abstract Organic/inorganic hybrid materials were formed using the sol-gel process, in which SiO2/fluoroalkyl-trialkoxysilane (FAS)/2-hydroxyethyl methacrylate (2-HEMA)/trimethylolpropane triacrylate (TMPTA) and SiO2/3-(trimethoxysilyl)propyl methacrylate (MSMA)/ 2-HEMA/TMPTA thin films were formed on a glass substrate using dip coating. Experimental results revealed that FAS and MSMA improved the pencil hardness of SiO2/2-HEMA/TMPTA thin films without affecting their optical properties. FAS strengthened the hydrophobic and hydrophilic characteristics of SiO2/2-HEMA/TMPTA thin films more than d
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25

Li, Ying, Gao Yang Zhao, Xiao Fei Zhou, Li Ning Pan, and Yang Ren. "A HRTEM Study of Resistive Switching Behaviour in SiO2 Thin Films by Sol-Gel Process." Materials Science Forum 687 (June 2011): 1–6. http://dx.doi.org/10.4028/www.scientific.net/msf.687.1.

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Amorphous SiO2 thin films were fabricated at different temperatures using sol-gel technique. The unipolar resistive switching behavior was observed in Cu/ SiO2/ ATO (SnO2: Sb) sandwiched structure when the SiO2 thin film annealed at 500°C. The average ratio of Roff /Ron is 102. We investigated the successful device using HRTEM and XPS. It shows that the Cu defuses into the SiO2 thin film and it forms CuSiO3 in the interface between SiO2 and ATO films according to the high resolution images.
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26

Kizjak, Anatoliy, Anatoliy Evtukh, Olga Steblova, and Yuriy Pedchenko. "Electron Transport through Thin SiO2 Films Containing Si Nanoclusters." Journal of Nano Research 39 (February 2016): 169–77. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.169.

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The electron transport mechanisms through nanocomposite SiO2(Si) films containing Si nanoclusters into dielectric SiO2 matrix have been investigated. SiO2(Si) films were obtained by oxide assisted growth. At the first stage the SiOx films with different content of excess Si were deposited by LP CVD method. Second stage includes high temperature (T=1100 C) annealing of SiOx films that promotes formation of Si nanocrystals. Current transport through SiO2(Si) films were studied in temperature range 100-350 K. As it was observed the dominant mechanism of electron transport depends as on voltage an
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27

SUN, Y. J., J. GAO, and C. Y. ZHANG. "PHOTOBLEACHING IN GeSe2 AND SiO2/GeSe2 THIN FILMS." Chalcogenide Letters 17, no. 10 (2020): 515–20. http://dx.doi.org/10.15251/cl.2020.1710.515.

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We prepared GeSe2 film and GeSe2 covered by a layer of thin SiO2 (SiO2/GeSe2) to examine photo-induced effects. We found, upon sub-gap light illumination, transmission edge of both the films exhibit a blue shift, but the amount of the shift in SiO2/GeSe2 is less than that in GeSe2. Kinetics measurements of the photo-induced effects indicate that the both films exhibit PB behavior after more than few hundreds seconds illumination. Raman scattering measurements show that some of Ge-Ge and Se-Se bonds are broken and convert to Ge-Se bonds. All the results indicate that the change of the intrinsic
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28

Kadri, Laid, Abdelkader Abderrahmane, Georgiana Bulai, et al. "Optical and Structural Analysis of TiO2–SiO2 Nanocomposite Thin Films Fabricated via Pulsed Laser Deposition Technique." Nanomaterials 13, no. 10 (2023): 1632. http://dx.doi.org/10.3390/nano13101632.

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TiO2–SiO2 nanocomposite thin films have gained the attention of the scientific community due to their unique physical and chemical properties. In this paper, we report on the fabrication and characterization of a TiO2–SiO2 nanocomposite disk-shaped target. The target was used for the deposition of TiO2–SiO2 nanocomposite thin films on fluorine-doped tin oxide/glass substrates using the pulsed laser deposition (PLD) technique. The thicknesses of the thin films were fixed to 100 nm, and the deposition temperature ranged from room temperature to 300 °C. As revealed by the microstructural and morp
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29

Hodroj, Abbas, Odette Chaix-Pluchery, Marc Audier, Ulrich Gottlieb, and Jean-Luc Deschanvres. "Thermal annealing of amorphous Ti–Si–O thin films." Journal of Materials Research 23, no. 3 (2008): 755–59. http://dx.doi.org/10.1557/jmr.2008.0088.

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Ti–Si–O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analyzed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain x-ray amorphous after annealing, whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well-crystallized anatase TiO2. Crystallization of anatase TiO2 is also clearly shown in the Raman spectra. Transmission electron microscopy analysis indicates that anatase TiO2 na
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30

Yang, Huan, Kai Bo Shen, Jian Liu, et al. "Preparation and Characterization of Innate Super-Hydrophilic TiO2/SiO2 Thin Films." Materials Science Forum 743-744 (January 2013): 372–76. http://dx.doi.org/10.4028/www.scientific.net/msf.743-744.372.

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Unlike photo-induced super-hydrophilic inorganic thin films, non-photoinduced innate super-hydrophilic TiO2/SiO2 thin films have been successfully prepared in this work. SiO2/TiO2 thin films were prepared by solgel method via adding hydrophilic fumed silica to TiO2 sol and characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and contact angle meter. The results show that the super-hydrophilicity of the as-prepared thin films can maintain for one month without light irradiation, and the thin films have excellent antifogging property as well.
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31

Myung, Ju Hyun, Nam Ho Kim, and Hyoun Woo Kim. "Structural Properties of Sputter-Deposited ZnO Thin Films Depending on the Substrate Materials." Materials Science Forum 475-479 (January 2005): 1825–28. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1825.

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We have demonstrated the growth of ZnO thin films with c-axis orientation at room temperature on various substrates such as Si(100), SiO2, and sapphire by the r.f. magnetron sputtering method. X-ray diffraction (XRD) and scanning electron microscopy altogether indicated that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si or SiO2 substrates. The c-axis lattice constant decreased by thermal annealing for the ZnO films deposited on Si or SiO2 substrates, while increased by the thermal annealing
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32

Gartner, Măriuca, M. Crisan, L. Predoana, Maria Zaharescu, A. Barau, and S. Preda. "Monocomponent Powders and Thin Films in the Binary System SiO2–TiO2." Key Engineering Materials 333 (March 2007): 289–92. http://dx.doi.org/10.4028/www.scientific.net/kem.333.289.

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In this work, we report the sol-gel alkoxide route preparation of nanostructured SiO2 and TiO2 powders as well as TiO2-SiO2 thin films obtained by dip-coating. Thermal analysis, morphology and structure were characterized for powders and correlation between preparation method and optical properties of binary materials (SiO2-TiO2) for thin films was approached. Spectroscopic Ellipsometry (SE), Fourier Transform Infrared Spectroscopy (FTIR) and scanning electron microscopy (SEM) have been used for the physical characterization of the films.
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Sumida, Takeshi, Ryu Abe, Michikazu Hara, Junko N. Kondo, and Kazunari Domen. "Preparation of SiO2-pillared layered titanate thin films." Journal of Materials Research 15, no. 12 (2000): 2587–90. http://dx.doi.org/10.1557/jmr.2000.0369.

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The interlayer space of a thin film of layered titanate, Cs0.68Ti1.83‪0.17O4, was successfully expanded by SiO2 pillaring. Ion exchange of the Cs ions in the interlayer to alkylammoniuim cations, n-CnH2n+1NH3+ (n = 8, 12, 18), expanded the interlayer space, and enabled intercalation of tetraethylorthosilicate. X-ray diffraction and the cross section of transmission electron microscopy images revealed that tetraethylorthosilicate-treated thin film maintained the expansion of interlayer space by SiO2 pillaring after calcination at 773 K. X-ray photoelectron spectroscopy after etching the thin fi
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34

Pei, Rui, Xinguo Ma, Qihai Xie, et al. "Self-Cleaning Characteristics of Mesoporous Nano-Crystalline TiO2–SiO2 Thin Films." Journal of Nanoelectronics and Optoelectronics 17, no. 5 (2022): 853–60. http://dx.doi.org/10.1166/jno.2022.3260.

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Mesoporous TiO2–SiO2 films with remarkable self-cleaning capability were prepared by Sol–Gel methods and pressureless sintering. Here, the results show that the incorporation of 20 V% SiO2 onto the TiO2 films enhances the performance of anti-fog and self-cleaning. According to the SEM image, it is found that the TiO2 particles are dispersed by the SiO2, thus enlarging the specific surface area of the TiO2 particles. Therefore, super hydrophilicity and self-cleaning performance are promoted. Besides, the mesoporous structure is formed on the surface of the TiO2–SiO2 films after calcination. The
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35

Yoon, Chongsei, Buil Jeon, and Giwan Yoon. "Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices." Applied Sciences 8, no. 7 (2018): 1127. http://dx.doi.org/10.3390/app8071127.

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In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) ma
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36

Radovic, Ivan, Yves Serruys, Yves Limoge, and Natasa Bibic. "Reactive sputtering deposition of SiO2 thin films." Journal of the Serbian Chemical Society 73, no. 1 (2008): 121–26. http://dx.doi.org/10.2298/jsc0801121r.

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SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5?10-6-2?10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1?10-3 mbar. The substrate temperature was held at 550?C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputter
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37

Atkinson, A. "Growth of NiO and SiO2 thin films." Philosophical Magazine B 55, no. 6 (1987): 637–50. http://dx.doi.org/10.1080/13642818708218370.

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38

Holten, Stephan, and Herbert Kliem. "Increased dielectric permittivity of SiO2 thin films." Journal of Applied Physics 90, no. 4 (2001): 1941–49. http://dx.doi.org/10.1063/1.1384484.

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39

Li, Boquan, and Isao Kojima. "Growth of Nb thin films on SiO2." Applied Surface Science 169-170 (January 2001): 371–74. http://dx.doi.org/10.1016/s0169-4332(00)00686-3.

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Iacona, Fabio, Giuseppina Casella, Francesco La Via, Salvatore Lombardo, Vito Raineri, and Giuseppe Spoto. "Structural properties of fluorinated SiO2 thin films." Microelectronic Engineering 50, no. 1-4 (2000): 67–74. http://dx.doi.org/10.1016/s0167-9317(99)00266-x.

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Henscheid, D., M. N. Kozicki, G. W. Sheets, M. Mughal, I. Zwiebel, and R. J. Graham. "Rapid thermal nitridation of thin SiO2 films." Journal of Electronic Materials 18, no. 2 (1989): 99–104. http://dx.doi.org/10.1007/bf02657393.

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Erdural, B. Korkmaz, G. Karakas, U. Bakir, Z. Suludere, and D. Suludere. "Antimicrobial properties of TiO2–SiO2 thin films." New Biotechnology 25 (September 2009): S67. http://dx.doi.org/10.1016/j.nbt.2009.06.303.

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Kozik, V. V., O. S. Khalipova, S. A. Kuznetsova, V. K. Ivanov, and Yu D. Tret’yakov. "Production of CeO2-SiO2 thin composite films." Doklady Chemistry 444, no. 1 (2012): 120–23. http://dx.doi.org/10.1134/s0012500812050023.

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Yoshimura, S., K. Hine, M. Kiuchi, et al. "Novel catalysts: Indium implanted SiO2 thin films." Applied Surface Science 257, no. 1 (2010): 192–96. http://dx.doi.org/10.1016/j.apsusc.2010.06.063.

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Chen, Peiyi, Yun Hu, and Chaohai Wei. "Preparation of superhydrophilic mesoporous SiO2 thin films." Applied Surface Science 258, no. 10 (2012): 4334–38. http://dx.doi.org/10.1016/j.apsusc.2011.12.109.

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Chang, I. T. H., B. Cantor, P. A. Leigh, and P. J. Dobson. "Fabrication of Si/SiO2 nanocomposite thin films." Nanostructured Materials 6, no. 5-8 (1995): 835–38. http://dx.doi.org/10.1016/0965-9773(95)00189-1.

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Simeonov, S., I. Yourukov, E. Kafedjiiska, and A. Szekeres. "Inter-trap tunnelling in thin SiO2 films." phys. stat. sol. (a) 201, no. 13 (2004): 2966–79. http://dx.doi.org/10.1002/pssa.200406849.

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Tzou, Wen Cheng, Hon Kuan, and Kai Yang Chuang. "The Influences of Annealing Temperatures on the Properties of HfO2 Thin Film and the Fabrication of SiO2/HfO2 Distributed Bragg Reflector." Advanced Materials Research 1101 (April 2015): 238–41. http://dx.doi.org/10.4028/www.scientific.net/amr.1101.238.

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Abstract:
In this study, HfO2 thin films were deposited onto the Si substrates by RF magnetron sputtering system. After deposition, the HfO2 thin films were then heated by a furnace thermal annealing process in air and at 400-700oC. The surface morphologies and crystalline characteristics of the HfO2 thin films were investigated by using SEM and XRD patterns. The grain sizes and crystalline phases increased with rising annealing temperature. In addition, the SiO2/HfO2 distributed bragg reflector (DBR) was used for improving the external quantum efficiency of the GaN-based LEDs. The output power of LEDs
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Diao, Chien Chen, Chia Ching Wu, Cheng Fu Yang, and Chao Chin Chan. "The Influence of Annealing Temperature on the Characteristics of 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 Thin Films." Key Engineering Materials 434-435 (March 2010): 263–66. http://dx.doi.org/10.4028/www.scientific.net/kem.434-435.263.

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In this study, 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + 1 wt% Bi2O3 (NBT-BT3) composition sintered at 1200oC for 2h is used as target to deposit the NBT-BT3 thin films. The excess 1wt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the deposition process. Ferroelectric NBT-BT3 thin films are deposited on SiO2/Si and Pt/Ti/SiO2/Si substrates using RF magnetron sputter method using the ceramic target fabricated by ourselves. After depositing under the optimal parameters, the thin films are then heated by a conventional thermal annealing (CFA) process conducted in air at temperatures ran
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Hirata, Katsuya, Hiroki Hara, and Hiroshi Katsumata. "Optical transition in nanocrystalline Si doped SiO2 thin films formed by cosputtering." Canadian Journal of Physics 92, no. 7/8 (2014): 732–35. http://dx.doi.org/10.1139/cjp-2013-0594.

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Optical transition properties of nanocrystalline silicon (nc-Si) doped SiO2 thin films prepared by cosputtering with SiO2 target and Si-chips followed by high temperature annealing were investigated as a function of ratio of target area (Si/SiO2) in the range of 0 to 0.19. Optical transmission measurements revealed that the indirect band-gap of nc-Si decreased from 4.87 to 2.32 eV with increasing Si/SiO2 from 0.04 to 0.19, whereas no noticeable absorption was observed for the samples with Si/SiO2 = 0.00. Photoluminescence (PL) measurements showed that considerably weak emissions due to oxygen
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