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Journal articles on the topic 'SiOx Matrix'

Author: Grafiati

Published: 7 September 2023

Last updated: 31 July 2025

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1

Sarikov, Andrey. "Thermodynamic Theory of Phase Separation in Nonstoichiometric Si Oxide Films Induced by High-Temperature Anneals." Nanomanufacturing 3, no. 3 (2023): 293–314. http://dx.doi.org/10.3390/nanomanufacturing3030019.

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High-temperature anneals of nonstoichiometric Si oxide (SiOx, x < 2) films induce phase separation in them, with the formation of composite structures containing amorphous or crystalline Si nanoinclusions embedded in the Si oxide matrix. In this paper, a thermodynamic theory of the phase separation process in SiOx films is proposed. The theory is based on the thermodynamic models addressing various aspects of this process which we previously developed. A review of these models is provided, including: (i) the derivation of the expressions for the Gibbs free energy of Si oxides and Si/Si oxid

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2

Terekhov, Vladimir A., Evgeniy I. Terukov, Yurii K. Undalov, et al. "Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition." Symmetry 15, no. 9 (2023): 1800. http://dx.doi.org/10.3390/sym15091800.

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The influence of Ar + SiH4 + O2 plasma formulation on the phase composition and optical properties of amorphous SiOx films with silicon nanoclusters obtained using PECVD with DC discharge modulation was studied. Using a unique technique of ultrasoft X-ray emission spectroscopy, it was found that at a 0.15 mol.% plasma oxygen content, amorphous silicon a-Si films are formed. At a high oxygen content (≥21.5 mol.%), nanocomposite films based on SiOx silicon suboxide containing silicon nanoclusters ncl-Si are formed. It was found that the suboxide matrix consists of a mixture of SiO1.3 and SiO2 ph

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3

Delimitis, A., S. D. Pappas, S. Grammatikopoulos, et al. "Microstructural Investigation of SiO_x Thin Films Grown by Reactive Sputtering on (001) Si Substrates." Journal of Nano Research 17 (February 2012): 147–56. http://dx.doi.org/10.4028/www.scientific.net/jnanor.17.147.

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In the Current Study, the Structural Characteristics of Siox Thin Films Grown by Magnetron Sputtering on Si Substrates Are Reported. High Resolution Transmission Electron Microscopy Revealed the Formation of Amorphous Siox Films for the as-Deposited Samples, as Well as the Ones Annealed in Ambient Air for 30 Min at 950oC and of Si Nanocrystals, Embedded in Amorphous Siox, after Ar Annealing for 1-4 Hours at 1000oC. the Nanocrystals, with Sizes up to 6 Nm, Predominately Exhibit {111} Lattice Planes. Energy-Dispersive X-Ray Analysis Showed that the Si/O Ratio Is between 0.5-1, I.e. the Amorphous

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4

Kizjak, Anatoliy, Anatoliy Evtukh, Olga Steblova, and Yuriy Pedchenko. "Electron Transport through Thin SiO₂ Films Containing Si Nanoclusters." Journal of Nano Research 39 (February 2016): 169–77. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.169.

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The electron transport mechanisms through nanocomposite SiO2(Si) films containing Si nanoclusters into dielectric SiO2 matrix have been investigated. SiO2(Si) films were obtained by oxide assisted growth. At the first stage the SiOx films with different content of excess Si were deposited by LP CVD method. Second stage includes high temperature (T=1100 C) annealing of SiOx films that promotes formation of Si nanocrystals. Current transport through SiO2(Si) films were studied in temperature range 100-350 K. As it was observed the dominant mechanism of electron transport depends as on voltage an

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5

Milutinović, A., Z. Dohčević-Mitrović, Diana Nesheva, M. Šćepanović, M. Grujić-Brojčin, and Zoran V. Popović. "Infrared and Photoluminescence Study of Rapidly Thermally Annealed SiO_x Thin Films." Materials Science Forum 555 (September 2007): 309–14. http://dx.doi.org/10.4028/www.scientific.net/msf.555.309.

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Silicon suboxide, SiOx thin films with different oxygen contents (1.15≤x≤1.70) were prepared by thermal evaporation of silicon monoxide at a residual oxygen pressure of 1·10-3 Pa and deposition rates of 0.2, 1.0, 3.0 and 6.0 nm/s. Rapid thermal annealing (RTA) of films was carried out at 1100°C in vacuum for 15 and 30 s and the films were analyzed by infrared (FTIR) and photoluminescence (PL) spectroscopy. In the FTIR spectra of SiOx annealed samples, a blue-shift of the stretching band with initial oxygen content, x, is observed. This band is shifted to a much lower frequency with prolonged R

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6

Curiel, Mario, Ivan Petrov, Nicola Nedev, et al. "Formation of Si Nanocrystals in Thin SiO₂ Films for Memory Device Applications." Materials Science Forum 644 (March 2010): 101–4. http://dx.doi.org/10.4028/www.scientific.net/msf.644.101.

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X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (~ 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 oC causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

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7

Nikolenko, A. S. "Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix." Semiconductor Physics Quantum Electronics and Optoelectronics 16, no. 1 (2013): 86–90. http://dx.doi.org/10.15407/spqeo16.01.086.

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8

Sathya, Swamickan, Ramasamy Santhosh Kumar, Sara Garcia-Ballesteros, Federico Bella, Dong Jin Yoo, and Arul Manuel Stephan. "Interplay Between Composition and Cycling Performance of Pre-Lithiated SiOx-Si-C Composite Anodes for Lithium–Sulfur Full Cells." Materials 18, no. 5 (2025): 1053. https://doi.org/10.3390/ma18051053.

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Although silicon-based anodes have been identified as a potential alternative to conventional graphite anodes, the huge volume change (approximately 300%) that occurs in silicon while cycling still impedes this system from practical applications. In the case of silicon-suboxide (SiOx)-based anode materials, both Li2O and LiSiO4 are formed during the initial lithiation processes and act as a natural volume buffer matrix to accommodate volume changes and the formation of a stable SEI layer, which improves the cyclability and capacity retention. In this study, a series of SiOx/Si/C-based electrod

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9

Luna-López, José Alberto, G. Garcia-Salgado, J. Carrillo-López, et al. "Si Nanocrystals Deposited by HFCVD." Solid State Phenomena 194 (November 2012): 204–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.194.204.

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The structural and optical properties of Si nanocrystal (Si-nc) embedded in a matrix of off-stoichiometric silicon oxide (SiOx, x<2) films prepared by hot filament chemical vapor deposition technique were studied. The films emit a wide photoluminescent spectra and the maximum peak emission shows a blue-shift as the substrate temperature (Ts) decreases. Also, a wavelength-shift of the absorption edge in transmittance spectra is observed, indicating an increase in the energy band gap. The Si-nc’s size decreased from 6.5 to 2.5 nm as Ts was reduced from 1150 to 900 °C, as measured through High

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10

Prikryl, Radek, Pavel Otrisal, Vladimir Obsel, Lubomír Svorc, Radovan Karkalic, and Jan Buk. "Protective Properties of a Microstructure Composed of Barrier Nanostructured Organics and SiOx Layers Deposited on a Polymer Matrix." Nanomaterials 8, no. 9 (2018): 679. http://dx.doi.org/10.3390/nano8090679.

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The SiOx barrier nanocoatings have been prepared on selected polymer matrices to increase their resistance against permeation of toxic substances. The aim has been to find out whether the method of vacuum plasma deposition of SiOx barrier nanocoatings on a polyethylene terephthalate (PET) foil used by Aluminium Company of Canada (ALCAN) company (ALCAN Packaging Kreuzlingen AG (SA/Ltd., Kreuzlingen, Switzerland) within the production of CERAMIS® packaging materials with barrier properties can also be used to increase the resistance of foils from other polymers against the permeation of organic

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11

Bonneux, Gilles, Kun Feng, Boaz Moeremans, et al. "Chemical Prelithiation of Silicon Oxide Anodes for Improved Performance in Lithium-Ion Batteries." ECS Meeting Abstracts MA2024-02, no. 7 (2024): 820. https://doi.org/10.1149/ma2024-027820mtgabs.

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Si/SiOX-based materials possess significant potential as an anode in Li-ion batteries, due to their high capacity, stable cycling performance and the volume expansion buffering of the SiOX matrix upon lithiation of silicon nanodomains. However, one of the main challenges is their low initial coulombic efficiency (ICE), due to SEI formation and irreversible parasitic reactions which trap Li ions inside the electrode matrix or at the interface. Prelithiation aims to compensate for the large initial irreversible capacity losses, which can be achieved by introducing active lithium directly into th

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12

Han, Li Hao, Jing Wang, and Ren Rong Liang. "Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications." Advanced Materials Research 383-390 (November 2011): 6270–76. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.6270.

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Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabri

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13

Feng, Xuejiao, Hongmin Cui, Zhenming Li, Rongrong Miao, and Nanfu Yan. "Scalable Synthesis of Dual-Carbon Enhanced Silicon-Suboxide/Silicon Composite as Anode for Lithium Ion Batteries." Nano 12, no. 07 (2017): 1750084. http://dx.doi.org/10.1142/s1793292017500849.

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The SiOx/Si composite enhanced by dual-carbon (i.e., multiwall carbon nanotubes and carbon) was fabricated from the micro silicon monoxide (SiO) by the combination of high-energy mechanical milling, spray drying and pyrolysis. The obtained SiOx/Si particles were composed of Si-suboxide and embedded nano-sized Si crystallites. As one of dual-carbons, the multi-walled carbon nanotubes were directly scaffolded of anchoring the SiOx/Si composite particles through spray drying. Another carbon source was directly deposited on the surface of the SiOx/Si by means of the carbonization of phenol–formald

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14

Shen, Yi, Jiechao Jiang, Petr Zeman, et al. "Microstructure of High Temperature Oxidation Resistant Hf6B10Si31C2N50 and Hf7B10Si32C2N44 Films." Coatings 10, no. 12 (2020): 1170. http://dx.doi.org/10.3390/coatings10121170.

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High-temperature oxidation resistant amorphous Hf6B10Si31C2N50 and Hf7B10Si32C2N44 films were deposited by reactive pulsed dc magnetron sputtering. To investigate the oxidation mechanism, the films were annealed up to 1500 °C in air. The evolved microstructures were studied by X-ray diffraction and transmission electron microscopy. A three-layered microstructure was developed upon exposure to high temperature. An oxidized layer formed at the top surface for both films consisting of monoclinic and/or orthorhombic m-/o-HfO2 nanoparticles embedded in an amorphous SiOx-based matrix. The as-deposit

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15

Zhang, X. H., S. J. Chua, A. M. Yong, et al. "Exciton radiative lifetime in ZnO quantum dots embedded in SiOx matrix." Applied Physics Letters 88, no. 22 (2006): 221903. http://dx.doi.org/10.1063/1.2207848.

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16

Nesheva, D., C. Raptis, Z. Levi, Z. Popovic, and I. Hinic. "Photoluminescence of CdSe nanocrystals embedded in a SiOx thin film matrix." Journal of Luminescence 82, no. 3 (1999): 233–40. http://dx.doi.org/10.1016/s0022-2313(99)00043-5.

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17

Jie, Y. X., X. Wu, C. H. A. Huan, et al. "Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix." Surface and Interface Analysis 28, no. 1 (1999): 195–99. http://dx.doi.org/10.1002/(sici)1096-9918(199908)28:1<195::aid-sia606>3.0.co;2-l.

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18

Jang, Seunghyeok, and Jae-Hun Kim. "SiOx-Based Anode Materials with High Si Content Achieved Through Uniform Nano-Si Dispersion for Li-Ion Batteries." Materials 18, no. 14 (2025): 3272. https://doi.org/10.3390/ma18143272.

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Silicon alloy-based materials are widely studied as high-capacity anode materials to replace commercial graphite in lithium-ion batteries (LIBs). Among these, silicon suboxide (SiOx) offers superior cycling performance compared to pure Si-based materials. However, achieving a high initial Coulombic efficiency (ICE) remains a key challenge. To address this, previous studies have explored SixO composites (x ≈ 1, 2), where nano-Si is uniformly dispersed within a Si suboxide matrix to enhance ICE. While this approach improves reversible capacity and ICE compared to conventional SiO, it still falls

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19

Zhang, X. H., Soo Jin Chua, A. M. Yong, et al. "Fabrication and Optical Properties of ZnO Quantum Dots." Advanced Materials Research 31 (November 2007): 71–73. http://dx.doi.org/10.4028/www.scientific.net/amr.31.71.

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Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and timeintegrated photoluminescence. The photoluminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.

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20

Ложкина, Д. А., Е. В. Астрова, Р. В. Соколов та ін. "Формирование кремниевых нанокластеров при диспропорционировании моноокиси кремния". Физика и техника полупроводников 55, № 4 (2021): 373. http://dx.doi.org/10.21883/ftp.2021.04.50743.9575.

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In this work, the processes of disproportionation of solid-phase silicon monoxide, accompanied by the formation of nanocrystalline silicon precipitates in the medium of amorphous SiOx suboxide (initial composition SiO0.9), have been studied. Based on the data of X-ray diffraction analysis and transmission electron microscopy, the dynamics of changes in the amount, concentration and size of phase precipitates of silicon with an increase in the temperature of isochronous annealing from 800 °C to 1200 °C is traced. It was found that with a monotonic increase in the total mass of the precipitated

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21

Ложкина, Д. А., Е. В. Астрова, Р. В. Соколов та ін. "Формирование кремниевых нанокластеров при диспропорционировании моноокиси кремния". Физика и техника полупроводников 55, № 4 (2021): 373. http://dx.doi.org/10.21883/ftp.2021.04.50743.9575.

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In this work, the processes of disproportionation of solid-phase silicon monoxide, accompanied by the formation of nanocrystalline silicon precipitates in the medium of amorphous SiOx suboxide (initial composition SiO0.9), have been studied. Based on the data of X-ray diffraction analysis and transmission electron microscopy, the dynamics of changes in the amount, concentration and size of phase precipitates of silicon with an increase in the temperature of isochronous annealing from 800 °C to 1200 °C is traced. It was found that with a monotonic increase in the total mass of the precipitated

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22

Yazicioglu, Deniz, Sebastian Gutsch, and Margit Zacharias. "(Invited) Size Controlled Silicon Quantum Dots: Understanding Basic Properties and Electronic Applications." ECS Meeting Abstracts MA2022-01, no. 20 (2022): 1077. http://dx.doi.org/10.1149/ma2022-01201077mtgabs.

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The fabrication of SiOx/SiO2 superlattices combined with thermal annealing enables the size and density control of Si quantum dots. The layered-arranged Si quantum dots represent a model system to systematically study the photonic and electronic properties of indirect gap quantum dots prepared in a CMOS compatible way. Hence, the model system is used to understand the interplay of absorption and recombination, the carrier kinetics and the electronic transport properties for matrix embedded Si quantum dots. The interplay of radiative and non-radiative recombination will be discussed for high qu

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23

Curiel, Mario, Nicola Nedev, Judith Paz, et al. "UV Sensitivity of MOS Structures with Silicon Nanoclusters." Sensors 19, no. 10 (2019): 2277. http://dx.doi.org/10.3390/s19102277.

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Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by furnace annealing of SiOx films with x = 1.15 for 60 min in N2 at 1000 and 700 °C, respectively. XPS and TEM analysis prove phase separation and formation of Si nanocrystals in SiO2, while the a-Si NPs are formed in SiO1.7 matrix. Both types of structures show selective sensitivity to UV light; the effect is more pronounced in the structure with nanocrystals. The responsivity of the nanocrystal structure to 365 nm UV ligh

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Kumar, V. V. Siva, and D. Kanjilal. "Enhancement in visible luminescence from nanocomposite ZnO-SiOx thin films due to annealing." Functional Materials Letters 07, no. 02 (2014): 1450007. http://dx.doi.org/10.1142/s1793604714500076.

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The annealing induced enhancement in visible photoluminescence (PL) from nanocomposite (nc) ZnO – SiO x thin films was investigated. Nc ZnO – SiO x thin films consisting of ZnO nanocrystals in silica matrix were grown by depositing the films using radio frequency (rf) reactive co-sputtering and post-annealing them at temperatures of 350°C and 500°C in high vacuum and air. These films were characterized by Fourier transform infrared (FTIR), (PL) spectroscopy and UV–Vis spectrophotometry measurements. Thin films were also deposited on transmission electron microscopy (TEM) grids in almost identi

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25

Song, Seunggon, Kyongmin Kim, Kyun Ho Jung, Junghyun Sok, and Kyoungwan Park. "Properties of Resistive Switching in TiO₂ Nanocluster-SiOx(x<2) Matrix Structure." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 18, no. 1 (2018): 108–14. http://dx.doi.org/10.5573/jsts.2018.18.1.108.

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Sayed, Hassan, Z. S. Matar, M. Al-Dossari, A. F. Amin, N. S. Abd El-Gawaad, and Arafa H. Aly. "The Design and Optimization of an Anti-Reflection Coating and an Intermediate Reflective Layer to Enhance Tandem Solar Cell Photons Capture." Crystals 12, no. 1 (2021): 57. http://dx.doi.org/10.3390/cryst12010057.

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We have theoretically demonstrated an efficient way to improve the optical properties of an anti-reflection coating (ARC) and an intermediate reflective layer (IRL) to enhance tandem solar cell efficiency by localizing the incident photons’ energy on a suitable sub-cell. The optimum designed ARC from a one-dimensional ternary photonic crystal, consisting of a layer of silicon oxynitride (SiON), was immersed between two layers of (SiO2); thicknesses were chosen to be 98 nm, 48 nm, and 8 nm, respectively. The numerical results show the interesting transmission properties of the anti-reflection c

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27

Huang, Xieyi, Peng Wang, Zhichao Zhang, et al. "Efficient conversion of CO2 to methane using thin-layer SiOx matrix anchored nickel catalysts." New Journal of Chemistry 43, no. 33 (2019): 13217–24. http://dx.doi.org/10.1039/c9nj03152a.

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Singh, Sarab Preet, and Pankaj Srivastava. "Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiN_x:H Thin Film for Si-Based Optoelectronic Devices." Solid State Phenomena 171 (May 2011): 1–17. http://dx.doi.org/10.4028/www.scientific.net/ssp.171.1.

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There has been a rapidly increasing interest in the synthesis and characterization of Si- nanostructures embedded in a dielectric matrix, as it can lead to energy-efficient and cost-effective Complementary Metal-Oxide-Semiconductor (CMOS)-compatible Si-based light sources for optoelectronic integration. In the present contribution, first an overview of the SiOx as a dielectric matrix and its limitations are discussed. We then review the literature on hydrogenated amorphous silicon nitride (a-SiNx:H) as a dielectric matrix for Si-nanostructures, which have been carried out using silane (SiH4) a

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Schumann, Erik, René Hübner, Jörg Grenzer, Sibylle Gemming, and Matthias Krause. "Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films." Nanomaterials 8, no. 7 (2018): 525. http://dx.doi.org/10.3390/nano8070525.

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Three-dimensional nanocomposite networks consisting of percolated Si nanowires in a SiO2 matrix, Si:SiO2, were studied. The structures were obtained by reactive ion beam sputter deposition of SiOx (x ≈ 0.6) thin films at 450 ∘C and subsequent crystallization using conventional oven, as well as millisecond line focus laser treatment. Rutherford backscattering spectrometry, Raman spectroscopy, X-ray diffraction, cross-sectional and energy-filtered transmission electron microscopy were applied for sample characterization. While oven treatment resulted in a mean Si wire diameter of 10 nm and a cry

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Melvin David Kumar, M., and Suganthi Devadason. "Quantum confinement effect in multilayer structure of alternate CdSe and SiOx insulator matrix thinfilms." Superlattices and Microstructures 58 (June 2013): 154–64. http://dx.doi.org/10.1016/j.spmi.2013.03.016.

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Chae, Somin, Hyung-kyu Lim, and Sangheon Lee. "Computation-Based Investigation of Motion and Dynamics of Lithium in Phase Separated Silicon-Oxide Anode Materials." ECS Meeting Abstracts MA2022-01, no. 55 (2022): 2269. http://dx.doi.org/10.1149/ma2022-01552269mtgabs.

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Si attracts significant attention as an alternative anode material to replace the conventional graphite anode in lithium-ion batteries (LIBs). Si offers extremely high theoretical energy-storage capacity of 4200 mAh/g for Li4.4Si, while the theoretical energy-storage capacity of graphite is only 372 mAh/g for Li/C6. In addition, Si is abundant, eco-friendly, and non-toxic, and it also has a safe thermodynamic potential with an average voltage of about 0.4 V vs. Li+/Li, making them attractive candidates for LIB anodes. However, the capacity of the Si anode exhibits a relatively high initial cha

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Evtukh, A., Oleg Bratus’, Volodymyr Ilchenko, Volodymyr Marin, and Iegor Vasyliev. "Capacitive Properties of MIS Structures with SiO_x and Si_xO_yN_z Films Containing Si Nanoclusters." Journal of Nano Research 39 (February 2016): 162–68. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.162.

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he negative differential capacity has been observed in case of MIS structures with SiOx and SixOyNz films containing Si nanoclusters. It has been shown that existence of negative differential capacity depends on charge state of Si nanoclusters or electron traps in the insulating matrix. In case of SixOyNz films the two peaks have been revealed in C-V characteristics connected with Si nanoclusters and electron traps. The low-temperature annealing of SixOyNz films in hydrogen passivates the electron traps caused by Si dangling bonds and as a result the peak in C-V characteristics connected with

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Ilday, Serim, Gizem Nogay, and Rasit Turan. "Spectroscopic ellipsometry study of Si nanocrystals embedded in a SiOx matrix: Modeling and optical characterization." Applied Surface Science 318 (November 2014): 256–61. http://dx.doi.org/10.1016/j.apsusc.2014.04.153.

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Rapp, Christin, Andreas Baumgärtel, Lucas Artmann, Markus Eblenkamp, and Syed Salman Asad. "Open air plasma deposited antimicrobial SiOx/TiOx composite films for biomedical applications." Current Directions in Biomedical Engineering 2, no. 1 (2016): 43–47. http://dx.doi.org/10.1515/cdbme-2016-0013.

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AbstractOpen air atmospheric pressure plasma jet (APPJ) enhanced chemical vapour deposition process was used to deposit biocompatible SiOx/TiOx composite coatings. The as deposited films are hydrophilic and show visible light induced photocatalytic effect, which is a consequence of the formation of defects in the TiOx structure due to the plasma process. This photocatalytic effect was verified by the demonstration of an antimicrobial effect under visible light on E. coli as well as by degradation of Rhodamine B. The films are non-cytotoxic as shown by the cytocompatibility tests. The films are

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Trinh, Thanh Thuy, Chonghoon Shin, Cam Phu Thi Nguyen, et al. "Charge Storage Capabilities of (a/nc) Si Embedded in SiOx Matrix and the Influence of Tunneling Layer Thickness of SiO2/(a/nc)Si–SiOx/SiOxNy Stack on the Memory Performances of MIS Structure." Journal of Nanoscience and Nanotechnology 17, no. 5 (2017): 3210–16. http://dx.doi.org/10.1166/jnn.2017.14096.

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Zhao, Jie, Hyun-Wook Lee, Jie Sun, et al. "Metallurgically lithiated SiOx anode with high capacity and ambient air compatibility." Proceedings of the National Academy of Sciences 113, no. 27 (2016): 7408–13. http://dx.doi.org/10.1073/pnas.1603810113.

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A common issue plaguing battery anodes is the large consumption of lithium in the initial cycle as a result of the formation of a solid electrolyte interphase followed by gradual loss in subsequent cycles. It presents a need for prelithiation to compensate for the loss. However, anode prelithiation faces the challenge of high chemical reactivity because of the low anode potential. Previous efforts have produced prelithiated Si nanoparticles with dry air stability, which cannot be stabilized under ambient air. Here, we developed a one-pot metallurgical process to synthesize LixSi/Li2O composite

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Gendensuren, Bolormaa, Minjae KIM, Nyambayar Sugartseren, and Eun-Souk OH. "Investigating of Carbon Agent Distribution Using Long-Chain Alkyl in Grafted Binder for High-Capacity SiOx/Graphite Anode." ECS Meeting Abstracts MA2024-01, no. 2 (2024): 258. http://dx.doi.org/10.1149/ma2024-012258mtgabs.

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A small amount of the conductive carbon agent in lithium-ion battery (LIB) formulation has a significantly impact on the rate capability performance of battery but the distribution problem of the carbon conductive material is issued in the electrode slurry due to its hydrophobic and inert characteristics. To overcome this problem, the use of dispersant agent was proposed in the electrode fabrication process. In this study, the grafting of adhesive acrylamide monomer (AM) and a long-chain alkyl monomer onto carboxymethyl cellulose (CMC) is applied to binder to improve the conductive agent distr

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Bie, Xuan, Yawei Dong, Man Xiong, et al. "Nitrogen-Doped Carbon Matrix to Optimize Cycling Stability of Lithium Ion Battery Anode from SiOx Materials." Inorganics 12, no. 1 (2023): 9. http://dx.doi.org/10.3390/inorganics12010009.

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This study prepared silicon oxide anode materials with nitrogen-doped carbon matrices (SiOx/C–N) through silicon-containing polyester thermal carbonization. Melamine was introduced as a nitrogen source during the experiment. This nitrogen doping process resulted in a porous structure in the carbon matrices, a fact confirmed by scanning electron microscopy (SEM). Pyridinic and quaternary nitrogen, but mainly tertiary nitrogen, were generated, as shown via X-ray photoelectron spectroscopy (XPS). Electrochemical tests confirmed that, as anode materials for a lithium-ion battery, SiOx/C–N provided

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Ying, Zhifeng, Wentao Tang, Zhigao Hu, et al. "Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition." Journal of Materials Research 25, no. 4 (2010): 680–86. http://dx.doi.org/10.1557/jmr.2010.0087.

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The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excel

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Fang, Fang, Wei Zhang, Jian Sun, et al. "Evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix prepared by reactive pulsed laser deposition." Journal of Materials Research 24, no. 7 (2009): 2259–67. http://dx.doi.org/10.1557/jmr.2009.0279.

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Photoluminescence (PL) properties of SiOx thin films deposited by pulsed laser ablation of Si in a reactive oxygen ambient and annealed in a nitrogen atmosphere were studied at room temperature. Raman spectroscopy, Fourier transform infrared spectroscopy, and optical transmission measurements were used to characterize the deposited films before and after annealing and complement the PL studies. Strong PL due to quantum confinement was observed at room temperature from Si nanocrystals with an average diameter of approximately 5 nm at 325-nm light excitation. An apparent dependence of PL on the

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Heo, Sung-Bo, Wang Ryeol Kim, Jun-Ho Kim, et al. "Effects of Copper Content on the Microstructural, Mechanical and Tribological Properties of TiAlSiN–Cu Superhard Nanocomposite Coatings." Coatings 12, no. 12 (2022): 1995. http://dx.doi.org/10.3390/coatings12121995.

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The effects of the Cu content on the microstructural, mechanical and tribological properties of the TiAlSiN–Cu coatings were investigated in an effort to improve the wear resistance with a good fracture toughness for cutting tool applications. A functionally graded TiAlSiN–Cu coating with various copper (Cu) contents was fabricated by a filtered cathodic arc ion plating technique using four different (Ti, TiAl2, Ti4Si, and Ti4Cu) targets in an argon-nitrogen atmosphere. The results showed that the TiAlSiN–Cu coatings are a nanocomposite consisting of (Ti,Al)N nano-crystallites (~5 to 7 nm) emb

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Samanta, Arup, and Debajyoti Das. "Effect of RF power on the formation and size evolution of nC-Si quantum dots in an amorphous SiOx matrix." Journal of Materials Chemistry 21, no. 20 (2011): 7452. http://dx.doi.org/10.1039/c1jm10443h.

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Terekhov, Vladimir A., Evgeny I. Terukov, Yury K. Undalov, et al. "Structural Rearrangement of a-SiOx:H Films with Pulse Photon Annealing." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 22, no. 4 (2020): 489–95. http://dx.doi.org/10.17308/kcmf.2020.22/3119.

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Amorphous SiOx films with silicon nanoclusters are a new interesting material from the standpoint of the physics, technology, and possible practical applications, since such films can exhibit photoluminescence due to size quantization. Moreover, the optical properties of these structures can be controlled by varying the size and the content of silicon nanoclusters in the SiOx film, as well as by transforming nanoclusters into nanocrystals by means of high-temperature annealing. However, during the annealing of nonstoichiometric silicon oxide, significant changes can occur in the phase composit

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Das, Debajyoti, and Arup Samanta. "Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiOx matrix synthesized by spontaneous plasma processing." Physical Chemistry Chemical Physics 17, no. 7 (2015): 5063–71. http://dx.doi.org/10.1039/c4cp05126b.

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Handke, Miroslaw. "Vibrational Spectra, Force Constants, and Si-O Bond Character in Calcium Silicate Crystal Structure." Applied Spectroscopy 40, no. 6 (1986): 871–77. http://dx.doi.org/10.1366/0003702864508322.

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Vibrational spectroscopic methods were used to study the Si-O bond character in silicates with different complex anions and crystal structures. The following calcium silicates were examined: Ca,(SiO5), γ-Ca2(SiO4), β-Ca2(SiO4), Ca3(Si2O7), Ca(SiO3), and Ca(Si3O3). The band assignments in IR and Raman spectra of these compounds have been deduced mainly from 28Si−30Si and 40Ca−44Ca isotopic shifts. The GF matrix method and molecular approximation for force constant calculations in silicate anions were used. The Si-O bond parameters (bond order, charge distribution, and bond ionicity, etc.) were

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Matveeva, L. O., E. F. Venger, R. V. Konakova, O. Yu Kolyadina, P. L. Neluba, and V. V. Shynkarenko. "Effect of Microwave Radiation on the Band Structure and Electronic Parameters of the Heterosystems with Fullerenes." Фізика і хімія твердого тіла 18, no. 2 (2017): 173–79. http://dx.doi.org/10.15330/pcss.18.2.173-179.

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The results of a complex study of C60/Si heterosystems are presented in this work: the crystal structure and composition of the films, internal mechanical stresses, electronic parameters of the film and the film-substrate interface, and the effect of external influences (ultraviolet irradiation, thermal annealing, gamma and microwave irradiation). The advantage of microwave treatment over others is established: the absence of fullerene decomposition, the removal of internal mechanical stresses in the heterosystem, and the improvement of its electronic parameters. Methods for remove the decompo

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Sakata, Tomohiro, Kumiko Takahashi, Noriyuki Takemoto, et al. "Comprehensive Analysis for PDA Effect on SiO₂/SiN_x/Si Stacked Structure Using Multiple Technique." ECS Meeting Abstracts MA2024-02, no. 20 (2024): 1832. https://doi.org/10.1149/ma2024-02201832mtgabs.

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Silicon nitride (SiNx) thin film in multi-stacked structure plays an important role as a charge trapping layer in flash memory device such as Silicon-Oxide-Nitride-Oxide-Silicon (SOMOS) and Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) memory [1, 2]. Thus, the performances of these memory devices strongly depend on the qualities of dielectric films which are controlled by deposition and annealing condition. Hence, the systematic evaluation of the quality of dielectric film in multi-stacked layers has been required to understand the chemical composition within each layer. In this study, compr

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Zhu, Min, Jie Yang, Zhihao Yu, Haibiao Chen, and Feng Pan. "Novel hybrid Si nanocrystals embedded in a conductive SiOx@C matrix from one single precursor as a high performance anode material for lithium-ion batteries." Journal of Materials Chemistry A 5, no. 15 (2017): 7026–34. http://dx.doi.org/10.1039/c7ta01254c.

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Lee, Dong Bok, and Seung Wan Woo. "Oxidation of SiOC Composite Having Dispersoids of Mo_4.8Si₃C_0.6 and MoSi₂." Materials Science Forum 486-487 (June 2005): 165–68. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.165.

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New ceramic composites that consist of the amorphous SiOC matrix having dispersoids of Mo4.8Si3C0.6 and some MoSi2 were synthesized, and their oxidation characteristics were investigated between 450 and 1050oC in air. The SiOC matrix was obtained by converting polymethylsiloxane via pyrolysis. The good oxidation resistance of the prepared composites originated from a thin, protective SiO2 layer formed on the surface. But the outermost oxide surface was porous, owing to the formation of the highly volatile MoO3, which was formed together with SiO2.

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Ложкина, Д. А., Е. В. Астрова та А. М. Румянцев. "Зависимость электрохимических параметров композитных SiO/C-анодов для литий-ионных аккумуляторов от состава и температуры синтеза". Журнал технической физики 92, № 3 (2022): 421. http://dx.doi.org/10.21883/jtf.2022.03.52137.267-21.

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The results of a study of anodes obtained by carbonization of silicon monoxide by means of a reaction with solid-phase fluorocarbon CF0.8 are presented. Charge/discharge voltage profiles were studied at different currents depending on the composition and temperature of the synthesis of composites. The irreversible losses of the 1st cycle and the contribution to them of intrinsic losses due to the formation of lithium oxide and its silicates and losses associated with the formation of SEI are analyzed. A difference has been established in the behavior of anodes made of SiO carbonized by anneali

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