Journal articles: 'SIW Circuits'

1

Hnilicka, Tomas, Titus Oyedokun, Tomas Zalabsky, and Heru Suhartanto. "Phase shifter based on the substrate integrated waveguide technology." Journal of Electrical Engineering 73, no. 1 (2022): 67–72. http://dx.doi.org/10.2478/jee-2022-0010.

Full text

Abstract:

Abstract Substrate integrated waveguide (SIW) technology is widely known transmission line technology adapted for use in various types of microwave circuits. This article deals with the analysis and design of a phase shifter based on the SIW technology. With simulation and measurement results obtained from the phase shifter with using air holes inside the structure, a test circuit was designed and manufactured. Results show that a phase balance of less than 10° is achieved with the experimental setup. The return loss value is better than 15 dB for working frequency band 8.85 GHz − 9GHz. The main benefit of this work is the easy of implementation air holes inside the structure and also the easy of manufacture of the circuits for antenna arrays, where a certain number of identical circuits is usually needed.

APA, Harvard, Vancouver, ISO, and other styles

2

Song, Kaijun, Mou Luo, Cuilin Zhong, and Yuxuan Chen. "High-isolation diplexer based on dual-mode substrate integrated waveguide resonator." International Journal of Microwave and Wireless Technologies 12, no. 4 (2019): 288–92. http://dx.doi.org/10.1017/s1759078719001387.

Full text

Abstract:

AbstractA high-isolation diplexer based on a dual-mode substrate integrated waveguide (SIW) resonator is proposed in this paper. Based on the theory of the dual-mode resonator, the miniaturized diplexers are designed by using the SIW dual-mode resonators. The superior isolation of the diplexers is obtained because the two operating modes of the dual-mode SIW resonators are not directly coupled and there is no interference with each other. In order to further improve the isolation of the circuit, the number of the order of the diplexer is added. Equivalent circuits are given to analyze and design the dual-mode high-isolation diplexers. Detailed analyses are given according to the equivalent circuits. The dual-mode third-order and fourth-order diplexers are designed and fabricated. The measured results agree well with the simulated ones. The total sizes of the fabricated third-order and fourth-order diplexers are 1.78λg × 2.64λg and 1.79λg × 3.63λg, respectively.

APA, Harvard, Vancouver, ISO, and other styles

3

Punati, Mounika, and R. Yuvaraj. "Substrate integrated circuits for high frequency of opto electronics." International Journal of Reconfigurable and Embedded Systems (IJRES) 9, no. 3 (2020): 224. http://dx.doi.org/10.11591/ijres.v9.i3.pp224-228.

Full text

Abstract:

Another age of high-recurrence coordinated circuits is displayed, which is called substrate incorporated circuits (SICS). Current cutting edge of circuit plan and implementation stages dependent on this new idea are assessed and dis-cussed in delail. Various potential outcomes and various favorable circumstances of the SICS are appeared for microwave, millimeter-wave and opto hardware applications. Down to earth models are delineated with hypothetical and trial results for substrate coordinated waveguide (SIW), substrate incorporated chunk waveguide (SISW) and substrate incorporated non-transmitting dielectric (SI") direct circuits. Future innovative work patterns are likewise dis-cussed regarding ease imaginative plan of millimeter-wave and optoelectronic coordinated circuits.

APA, Harvard, Vancouver, ISO, and other styles

4

P., Mounika, and Yuvaraj R. "Substrate integrated circuits for high frequency of opto electronics." International Journal of Reconfigurable and Embedded Systems 9, no. 3 (2020): 224–28. https://doi.org/10.11591/ijres.v9.i3.pp224-228.

Full text

Abstract:

Another age of high-recurrence coordinated circuits is displayed, which is called substrate incorporated circuits (SICS). Current cutting edge of circuit plan and implementation stages dependent on this new idea are assessed and dis-cussed in delail. Various potential outcomes and various favorable circumstances of the SICS are appeared for microwave, millimeter-wave and opto hardware applications. Down to earth models are delineated with hypothetical and trial results for substrate coordinated waveguide (SIW), substrate incorporated chunk waveguide (SISW) and substrate incorporated non-transmitting dielectric (SI") direct circuits. Future innovative work patterns are likewise dis-cussed regarding ease imaginative plan of millimeter-wave and optoelectronic coordinated circuits.

APA, Harvard, Vancouver, ISO, and other styles

5

Song, Kaijun, Zihang Luo, Song Guo, Maoyu Fan, and Yedi Zhou. "Modified Y-junction SIW power divider/combiner circuit." International Journal of Microwave and Wireless Technologies 10, no. 8 (2018): 877–82. http://dx.doi.org/10.1017/s1759078718000831.

Full text

Abstract:

AbstractA modified compact Y-junction substrate-integrated waveguide (SIW) four-way power divider (PD)/combiner is proposed in this paper. The proposed approach is based on the traditional Y-junction waveguide. By using direct transition structure from SIW to half-mode SIW, four-way PD that provides equal power split to all four output ports is achieved. The even- and odd-mode equivalent circuits are given to analyze and design the PD. The measured results validate the proposed design methodology and show good agreement with the simulation results. The measured 17 dB return loss bandwidth and 1.2 dB insertion loss bandwidth of this four-way PD are both about 2.5 GHz.

APA, Harvard, Vancouver, ISO, and other styles

6

Ben Romdhan Hajri, Jamel, Hafedh Hrizi, and Noureddine Sboui. "Accurate and efficient study of substrate-integrated waveguide devices using iterative wave method." International Journal of Microwave and Wireless Technologies 9, no. 1 (2015): 85–91. http://dx.doi.org/10.1017/s1759078715001336.

Full text

Abstract:

This paper proposes an efficient and fast analysis of substrate integrated waveguide (SIW) components using a new approach of the iterative method called WCIP, i.e. “Wave Concept Iterative Process”. This method is based on the iterative resolution of waves between two domains. The first is the spectral domain. We use the Floquet–Bloch decomposition to describe all modes in the spectral domain. The second describes the configuration of the circuit in the spatial domain. It allows taking the exact structure according to the appropriate boundary conditions. This method permits to reduce numerical complexity. The convergence of this approach is always guaranteed. The theoretical suggested study is validated by the simulation of two different examples of SIW circuits. The obtained results are in good agreement with those of measurement and with software HFSS simulations, which prove the advantage of this method.

APA, Harvard, Vancouver, ISO, and other styles

7

Paliwal, Ruchi, Shweta Srivastava, and Reema Buddhiraja. "Band pass filter size reduction by implementing substrate integrated waveguide technique." Journal of Information and Optimization Sciences 44, no. 6 (2023): 1241–50. http://dx.doi.org/10.47974/jios-1496.

Full text

Abstract:

Pass Band Filter with precise selectivity is one of the major requirements of MMIC circuits. The major challenge while designing is size. This paper presents a size reduction technique for the Pass Band Filter by implementing SIW (Substrate Integrated Waveguide). The simulated results for the based filter show size reduction as resonance is shifting at the lower side of the frequency range. The passband filter without SIW is having resonance at 8.4GHz with return loss -26dB. After Implementing SIW results show resonance frequency at 7.2 GHz with a return loss of -23.86 dB without affecting the selectivity of the pass band filter. For Design Simulation, Ansys HFSS is used.

APA, Harvard, Vancouver, ISO, and other styles

8

Venanzoni, Giuseppe, Davide Mencarelli, Antonio Morini, Marco Farina, and Francesco Prudenzano. "Review of Substrate Integrated Waveguide Circuits for Beam-Forming Networks Working in X-Band." Applied Sciences 9, no. 5 (2019): 1003. http://dx.doi.org/10.3390/app9051003.

Full text

Abstract:

A review of substrate integrated waveguide (SIW) components designed for the use in beam-forming networks working in X-Band is presented. The proposed devices are four-port and six-port couplers and magic tees for the network. The devices take full advantage of the use of SIW technology in order to reduce size, weight, and cost. The design processes of all devices are exposed, and the experimental results of prototypes show the feasibility of these solutions.

APA, Harvard, Vancouver, ISO, and other styles

9

Aitken, John Ross, Jiasheng Hong, and Zhang‐Cheng Hao. "Millimetre wave SIW diplexer circuits with relaxed fabrication tolerances." IET Microwaves, Antennas & Propagation 11, no. 8 (2017): 1133–38. http://dx.doi.org/10.1049/iet-map.2016.0594.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Akkader, Souad, Hamid Bouyghf, and Abdennaceur Baghdad. "Bio-inspired intelligence for minimizing losses in substrate integrated waveguide." International Journal of Electrical and Computer Engineering (IJECE) 13, no. 3 (2023): 2837. http://dx.doi.org/10.11591/ijece.v13i3.pp2837-2846.

Full text

Abstract:

This paper presents a study of various types of losses in substrate-integrated waveguides (SIW) using a genetic algorithm. Three main types of losses are considered and examined separately: conductor loss, dielectric loss, and radiation loss. Furthermore, the current analysis allows for a physical understanding of the loss impacts as well as the creation of design guidelines to reduce losses at 10 GHz frequency while keeping the miniaturized size of the SIW. Validation results obtained using the software Ansys HFSS, verify that the attenuation constant of the SIW can be significantly reduced to 0.4 dB/m, the Insertion loss S21 to -0.2 dB and the return loss to -38 dB if the geometric parameters are chosen properly. This study enables us to identify the source of losses in a SIW and, as a result, eliminate any type of dispersion. That demonstrates the usability of SIW technologies in the design of microwave circuits used in Internet of things applications.

APA, Harvard, Vancouver, ISO, and other styles

11

Souad, Akkader, Bouyghf Hamid, and Baghdad Abdennaceur. "Bio-inspired intelligence for minimizing losses in substrate integrated waveguide." International Journal of Electrical and Computer Engineering (IJECE) 13, no. 3 (2023): 2837–46. https://doi.org/10.11591/ijece.v13i3.pp2837-2846.

Full text

Abstract:

This paper presents a study of various types of losses in substrate-integrated waveguides (SIW) using a genetic algorithm. Three main types of losses are considered and examined separately: conductor loss, dielectric loss, and radiation loss. Furthermore, the current analysis allows for a physical understanding of the loss impacts as well as the creation of design guidelines to reduce losses at 10 GHz frequency while keeping the miniaturized size of the SIW. Validation results obtained using the software Ansys HFSS, verify that the attenuation constant of the SIW can be significantly reduced to 0.4 dB/m, the Insertion loss S21 to -0.2 dB and the return loss to -38 dB if the geometric parameters are chosen properly. This study enables us to identify the source of losses in a SIW and, as a result, eliminate any type of dispersion. That demonstrates the usability of SIW technologies in the design of microwave circuits used in Internet of things applications.

APA, Harvard, Vancouver, ISO, and other styles

12

P. Cowsigan, S., and D. Saraswady. "Structuring, Design and Analysis of a Pentab and SIW Cavity Backed Antenna for Iot Applications." International Journal of Engineering & Technology 7, no. 3.27 (2018): 345. http://dx.doi.org/10.14419/ijet.v7i3.27.17969.

Full text

Abstract:

Substrate Integrated Waveguide (SIW) cavity backed antenna technology is a new form of transmission line facilitating the realization of non-planar (waveguide based) circuits into planar form for easy integration with other planar (Microstrip) circuits and systems. They retain the low copper and dielectric loss property of traditional metallic waveguides and are widely used in integration of walls, floors and flame redundant wearable. SIW-CB antenna is a perfect candidate for IoT based wearable antenna with FR4 substrate. In this sense we structurizean efficient small size antenna for IoT applications to operate in the range of 5 – 15 GHz. FR4-epoxy substrate is chosen so that the losses are minimized hence improving the efficiency. The proposed antenna resonates at 5.4, 6.9,9.1,11.5 & 14.2 GHz hence forming the Pentaband with a maximum return loss of 38.6 db. The other antenna parameter values are Gain 28.5 db, efficiency 90% and VSWR 1.

APA, Harvard, Vancouver, ISO, and other styles

13

T.R., Ganesh Babu, Praveena R., Pramod Kumar B., Harshith Sri Sai N., and Supriya M. "Substrate Integrated Waveguide Slot Antenna for 5G Application." IRO Journal on Sustainable Wireless Systems 7, no. 1 (2025): 90–101. https://doi.org/10.36548/jsws.2025.1.007.

Full text

Abstract:

This research presents the design and analysis of a Substrate Integrated Waveguide (SIW) based slot antenna for high-frequency microwave applications. The antenna structure is developed on a Rogers 5880 substrate with a relative permittivity (εr) of 4.4 and a thickness of 0.6 mm, offering low dielectric losses and stable performance. The SIW cavity is formed using periodic metallic vias with a radius of 0.25 mm and a pitch of 0.8 mm, ensuring effective confinement of the guided wave. A longitudinal slot is etched on the top metallic plane to enable efficient radiation. The overall dimensions of the SIW are 17 mm in length and 8 mm in width, making the antenna compact and suitable for integration in planar circuits. The proposed SIW slot antenna exhibits desirable characteristics such as directional radiation, low profile, and high efficiency, making it promising for applications in wireless communication, radar systems, and compact RF front-ends.

APA, Harvard, Vancouver, ISO, and other styles

14

Tlaxcalteco-Matus, Miguel Angel, and Reydezel Torres-Torres. "Modeling a SIW filter with IRIS windows using equivalent circuits." Microwave and Optical Technology Letters 54, no. 12 (2012): 2865–68. http://dx.doi.org/10.1002/mop.27183.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Nguyen, Thuy-Linh, Duy-Manh Luong, Ta Van Mai, et al. "SIW Directional Coupler with Improved Isolation for X-Band Applications." Electronics 14, no. 4 (2025): 774. https://doi.org/10.3390/electronics14040774.

Full text

Abstract:

This paper presents the design of a high-isolation directional coupler for X-band applications, utilizing substrate-integrated waveguide (SIW) technology. The coupler features a simple structure, compact size, and ease of integration with other planar circuits. Typically, the S-parameters of a directional coupler are determined by the dimensions of the SIW and the aperture (or hole) of the coupler. In this study, we introduce additional via lines to modify the SIW and the coupler aperture, aiming to achieve high isolation. First, two via lines are embedded in the center, converging into two central vias that form the coupler’s aperture. The power ratio within the coupler is controlled by adjusting the width of the aperture and the overall width of the SIW. Specifically, the width of the SIW at the aperture position is affected by adding vias on the two outer sides of the SIW. By incorporating these vias, we can effectively manage the power distribution across the four ports while ensuring sufficient isolation among them. The proposed design achieves an insertion loss of 3.3 dB, a coupling factor of 6 dB, and an isolation factor of 28.6 dB at 10 GHz. The experimental results demonstrate that the coupler maintains S41 less than −20 dB over a 30% fractional bandwidth, ranging from 8.6 GHz to 11.6 GHz.

APA, Harvard, Vancouver, ISO, and other styles

16

Zhang, Xiao Hong, Guo Qing Luo, and Lin Xi Dong. "Substrate Integrated Waveguide Fed Cavity Backed Slot Antenna for Circularly Polarized Application." International Journal of Antennas and Propagation 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/316208.

Full text

Abstract:

A novel planar low-profile cavity-backed slot antenna for circularly polarized applications is presented in this paper. The low-profile substrate integrated waveguide (SIW) cavity is constructed on a single PCB substrate with two metal layers on the top and the bottom surfaces and metallized via array through the substrate. The SIW cavity is fed by a SIW transmission line. The two orthogonal degenerate cavities resonanceTM110mode are successfully stimulated and separated. The circularly polarized radiation has been generated from the crossed-slot structure whose two arms’ lengths have slight difference Its gain is higher than 5.4 dBi, the peak cross-polarization level is lower than −22 dB, and the maximum axial ratio (AR) is about −1.5 dB. Compared with the previous presented low-profile cavity-backed slot antenna work, the spurious radiation from the proposed antenna’s feeding element is very low and it has less interference on the following circuits.

APA, Harvard, Vancouver, ISO, and other styles

17

Moznebi, Ali-Reza, and Kambiz Afrooz. "Compact power divider based on half mode substrate integrated waveguide (HMSIW) with arbitrary power dividing ratio." International Journal of Microwave and Wireless Technologies 9, no. 3 (2016): 515–21. http://dx.doi.org/10.1017/s1759078716000544.

Full text

Abstract:

Design and realisation of a compact power divider based on half mode substrate integrated waveguide (HMSIW) with an arbitrary power dividing ratio is presented. This design consists of a substrate integrated waveguide (SIW) transition, two bisected HMSIW transitions by a gap, an SIW-to-microstrip transition, and two microstrip feed lines. In addition, a resistor is attached between two HMSIW transitions. To adjust the power division ratio, four parameters are introduced. Furthermore, four graphs are plotted using a three-dimensional electronmagnetic (3D EM) simulator to graphically determine the introduced parameters. In this study, three circuits with power division ratios of 1:1, 1:4, and 1:8 are simulated using the 3D EM simulator and fabricated on a Rogers RO4003C substrate. The results show a good agreement between the simulated and measured results. The measured results display these circuits (1:1, 1:4, and 1:8) have the bandwidths of 70, 36, and 40%, respectively. Moreover, the proposed structures (1:1, 1:4, and 1:8) are compact and their overall sizes are$1.13 \times 1.04\lambda _g^2 $,$0.96 \times 0.91\lambda _g^2 $, and$0.81 \times 0.78\lambda _g^2 $, respectively. These structures have the advantages of the compactness in size, wide bandwidth, high power division ratio (from 1:1 to 1:16), and compatibility with planar circuits.

APA, Harvard, Vancouver, ISO, and other styles

18

Nwajana, Augustine O., and Emenike Raymond Obi. "A Review on SIW and Its Applications to Microwave Components." Electronics 11, no. 7 (2022): 1160. http://dx.doi.org/10.3390/electronics11071160.

Full text

Abstract:

Substrate-integrated waveguide (SIW) is a modern day (21st century) transmission line that has recently been developed. This technology has introduced new possibilities to the design of efficient circuits and components operating in the radio frequency (RF) and microwave frequency spectrum. Microstrip components are very good for low frequency applications but are ineffective at extreme frequencies, and involve rigorous fabrication concessions in the implementation of RF, microwave, and millimeter-wave components. This is due to wavelengths being short at higher frequencies. Waveguide devices, on the other hand, are ideal for higher frequency systems, but are very costly, hard to fabricate, and challenging to integrate with planar components in the neighborhood. SIW connects the gap that existed between conventional air-filled rectangular waveguide and planar transmission line technologies including the microstrip. This study explores the current advancements and new opportunities in SIW implementation of RF and microwave devices including filters, multiplexers (diplexers and triplexers), power dividers/combiners, antennas, and sensors for modern communication systems.

APA, Harvard, Vancouver, ISO, and other styles

19

Wang, Chao, Xiao-Chun Li, and David Keezer. "Differential-Fed Wideband Circularly Polarized SIW Cavity-Backed Slot Antenna Array." Electronics 14, no. 12 (2025): 2389. https://doi.org/10.3390/electronics14122389.

Full text

Abstract:

This paper presents a wideband circularly polarized (CP) substrate-integrated waveguide (SIW) cavity-backed slot antenna array arranged in a 2 × 2 configuration with differential feeding structures. The design features arc-shaped microstrips within the SIW cavity to excite the TE011x/TE101y and TE211y/TE121x modes. By overlapping the center frequencies of the two modes, wideband CP radiation is achieved. The introduction of four modified ring couplers composes a simple but efficient differential feeding network, eliminating the need for balanced resistors like baluns, making it more suitable for millimeter wave or even higher frequency applications. Experimental results show that the antenna array achieves a −10 dB impedance bandwidth of 32.6% (from 17.28 to 24.00 GHz), a 3 dB axial ratio (AR) bandwidth of 13.8% (from 17.05 to 19.57 GHz), a 3 dB gain bandwidth of 41.8% (from 15.39 to 23.51 GHz) and a peak gain of 10.6 dBi, with results closely matching simulation data. This study enhances the development of differential CP SIW cavity-backed slot antenna arrays, offering a potential solution for creating compact integrated front-end circuits in the millimeter wave or Terahertz frequency range.

APA, Harvard, Vancouver, ISO, and other styles

20

H, Vinod Kumar, and Aswatha A R. "INSPECTION ON SUPERWIDE BAND 5G ANTENNAS FOR COMMUNICATION APPLICATIONS." ICTACT Journal on Microelectronics 7, no. 2 (2021): 1101–8. https://doi.org/10.21917/ijme.2021.0192.

Full text

Abstract:

The 5th Generation (5G) technology requires a higher data rate, superior bandwidth, improved efficiency, and compact antennas for smartphones to facilitate with different types of super wideband antennas are inspected with design methodology, gain, bandwidth, and other performance parameters are analyzed to find applications in 5G technology. The different types of array antenna provide higher gain but fed with a single port demonstrate similar capabilities as a single antenna. The multiple-input multiple-output(MIMO) antenna having the capability of multipath propagation, higher data rate, enhanced capability, and link reliability, which provides the solution to 5G technology. The substrate integrated waveguide (SIW) antennas explore the advantage of classical metallic waveguides such as low radiation loss, high power, high gain, and high selectivity, and also planar antenna consists of low profile, low cost, lightweight, and ease of integration with microwave circuits. The combined capability of SIW with MIMO structure is the potential candidate for 5G smartphones. The simple SIW antenna simulated using high-frequency structured simulation (HFSS) software tool, which provides the multiple band''s resonances from 21 GHz to 50 GHz operating band and reflection coefficient |S11| at 28.66 GHz is -58.577 dB as standard value is less than -10dB.

APA, Harvard, Vancouver, ISO, and other styles

21

Lim, Gwan-Yong, Cheol Yoon, Won-Mo Sung, and Woo-Su Kim. "Broadband Waveguide-to-Microstrip Transition Design Using Patch Structure in the D-Band(140 GH -160 GHz)." Korea Industrial Technology Convergence Society 29, no. 4 (2024): 39–46. https://doi.org/10.29279/jitr.k.2024.29.4.39.

Full text

Abstract:

This paper presents the design of a waveguide-to-microstrip transition for millimeter-wave integrated circuits that fulfills the requirements of the D-band (140 GHz-160 GHz). The proposed transition is vertically structured to minimize loss, transferring signals that propagate from a WR-7 standard waveguide to a microstrip via a substrate integrated waveguide (SIW). To enable efficient mode conversion, a patch is inserted between the standard waveguide and SIW. Using HFSS from Ansoft, the frequency characteristics were analyzed by adjusting the patch size and position of the pin, achieving a wideband design. The substrate used for the design is Taconic RF-35, with a dielectric constant of 3.5 (loss tangent 0.0018) and a thickness of 0.254 mm. Simulation results demonstrate a bandwidth from 124 GHz to 163 GHz, with an average insertion loss of -0.9 dB or less and an average return loss of -10 dB or less across the band.

APA, Harvard, Vancouver, ISO, and other styles

22

Patrovsky, A., M. Daigle, and Ke Wu. "Coupling Mechanism in Hybrid SIW–CPW Forward Couplers for Millimeter-Wave Substrate Integrated Circuits." IEEE Transactions on Microwave Theory and Techniques 56, no. 11 (2008): 2594–601. http://dx.doi.org/10.1109/tmtt.2008.2005919.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Fellah, B., N. Cherif, M. Abri, and H. Badaoui. "The chamfered bend two, four and eight-way SIW power dividers analysis for millimeter wave applications using the quick finite element method." Advanced Electromagnetics 11, no. 3 (2022): 64–70. http://dx.doi.org/10.7716/aem.v11i3.1817.

Full text

Abstract:

In this paper, we propose three kinds of substrate-integrated waveguide (SIWs) based chamfered bend power divider junctions provide equal power distribution to all output ports while maintaining high isolation and operating in the 54 GHz to 60 GHz frequency band. The advantages of the SIW technology are ease of design, fabrication and low form and full integration with planar printed circuits. In this case, the concept of the SIW H-plane power divider is implemented using a rigorous two-dimensional quick finite element method (2D-QFEM) programmed by MATLAB software. The numerical performance of this method is the Quick simulation time for using the mesh with Delaunay regularization in two dimensions, if we increase the mesh the FEM gives better results. This paper presents the transmission coefficient, return loss and the electric field distribution. The results obtained from QFEM were compared with those provided by HFSS for validation. When using the discretization with the Delaunay procedure only in two dimensions, we notice that the calculated simulation time decreases with good precision.

APA, Harvard, Vancouver, ISO, and other styles

24

Jamel, Ben Romdhan Hajri, Hafedh Hrizi, and Noureddine Sboui. "Analysis and improvement of HF circuits based on SIW and DGS technologies using iterative method." International Journal of Applied Electromagnetics and Mechanics 50, no. 1 (2016): 155–66. http://dx.doi.org/10.3233/jae-150088.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Rubio, Jesus, Alfonso Gomez Garcia, Rafael Gomez Alcala, Yolanda Campos-Roca, and Juan Zapata. "Overall Formulation for Multilayer SIW Circuits Based on Addition Theorems and the Generalized Scattering Matrix." IEEE Microwave and Wireless Components Letters 28, no. 6 (2018): 485–87. http://dx.doi.org/10.1109/lmwc.2018.2830101.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Belenguer, Angel, Hector Esteban, Alejandro L. Borja, and Vicente E. Boria. "Empty SIW Technologies: A Major Step Toward Realizing Low-Cost and Low-Loss Microwave Circuits." IEEE Microwave Magazine 20, no. 3 (2019): 24–45. http://dx.doi.org/10.1109/mmm.2018.2885630.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Salem Hesari, Sara, and Jens Bornemann. "Design of a SIW Variable Phase Shifter for Beam Steering Antenna Systems." Electronics 8, no. 9 (2019): 1013. http://dx.doi.org/10.3390/electronics8091013.

Full text

Abstract:

This paper proposes a new beam steering antenna system consisting of two variable reflection-type phase shifters, a 3 dB coupler, and a 90° phase transition. The entire structure is designed and fabricated on a single layer of substrate integrated waveguide (SIW), which makes it a low loss and low-profile antenna system. Surface mount tuning varactor diodes are chosen as electrical phase control elements. By changing the biasing voltage of the varactor diodes in the phase shifter circuits, the far-field radiation pattern of the antenna steers from −25° to 25°. The system has a reflection coefficient better than −10 dB for a 2 GHz bandwidth centered at 17 GHz, a directive radiation pattern with a maximum of 10.7 dB gain at the mid-band frequency, and cross polarization better than 20 dB. A prototype is fabricated and measured for design verification. The measured far-field radiation patterns, co and cross polarization, and the reflection coefficient of the antenna system agree with simulated results.

APA, Harvard, Vancouver, ISO, and other styles

28

Simanjuntak, Imelda U. V., Agus D. Rochendi, and Lukman M. Silalahi. "Integrated Microstrip Antenna Reflector Based on SIW for 5G Networks." Jurnal Elektronika dan Telekomunikasi 22, no. 1 (2022): 1. http://dx.doi.org/10.55981/jet.442.

Full text

Abstract:

High data rates, low latency, and low energy consumption are required for the fifth-generation (5G) mobile wireless network. One of the devices that garner interest to be developed is the antenna. Microstrip antennas are widely used in cellular communications because of their simple profile and easy fabrication. However, it has limitations in terms of performance. The millimeter-wave band has been selected to provide high-speed service in 5G wireless networks. Compared to other frequency bands, the propagation path in millimeter-wave is significantly decreased. The substrate integrated waveguide (SIW) technology aims to integrate all components on the same substrate, with low insertion loss and a low profile. Using a dielectric substrate on top and a metallic coating at the bottom with metalized holes, the SIW structure offers a compact form factor for integrating active circuits, passive components, and radiation elements within the same substrate. Therefore, this study aims to design and implement a reflector integrated microstrip antenna with a compact form and a working frequency of 26 GHz. The measurements showed the return loss value of -11 dB, voltage standing wave ratio (VSWR) of 1.9, and the antenna impedance of 63 Ω. The antenna that was designed and fabricated in this work is suitable for operation in the millimeter-wave range for 5G technology.

APA, Harvard, Vancouver, ISO, and other styles

29

Moitra, Sourav, and Partha Sarathee Bhowmik. "Design and Analysis of 150° Bend SIW and Corrugated SIW Bandpass Filter with Multiple Transmission Zeroes Using Reactive Periodic Structures Suitable for Microwave Integrated Circuits (MICs)." Wireless Personal Communications 101, no. 1 (2018): 167–80. http://dx.doi.org/10.1007/s11277-018-5681-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Sakurai, Akira, Charuni A. Gunaratne, and Paul S. Katz. "Two interconnected kernels of reciprocally inhibitory interneurons underlie alternating left-right swim motor pattern generation in the mollusk Melibe leonina." Journal of Neurophysiology 112, no. 6 (2014): 1317–28. http://dx.doi.org/10.1152/jn.00261.2014.

Full text

Abstract:

The central pattern generator (CPG) underlying the rhythmic swimming behavior of the nudibranch Melibe leonina (Mollusca, Gastropoda, Heterobranchia) has been described as a simple half-center oscillator consisting of two reciprocally inhibitory pairs of interneurons called swim interneuron 1 (Si1) and swim interneuron 2 (Si2). In this study, we identified two additional pairs of interneurons that are part of the swim CPG: swim interneuron 3 (Si3) and swim interneuron 4 (Si4). The somata of Si3 and Si4 were both located in the pedal ganglion, near that of Si2, and both had axons that projected through the pedal commissure to the contralateral pedal ganglion. These neurons fulfilled the criteria for inclusion as members of the swim CPG: 1) they fired at a fixed phase in relation to Si1 and Si2, 2) brief changes in their activity reset the motor pattern, 3) prolonged changes in their activity altered the periodicity of the motor pattern, 4) they had monosynaptic connections with each other and with Si1 and Si2, and 5) their synaptic actions helped explain the phasing of the motor pattern. The results of this study show that the motor pattern has more complex internal dynamics than a simple left/right alternation of firing; the CPG circuit appears to be composed of two kernels of reciprocally inhibitory neurons, one consisting of Si1, Si2, and the contralateral Si4 and the other consisting of Si3. These two kernels interact with each other to produce a stable rhythmic motor pattern.

APA, Harvard, Vancouver, ISO, and other styles

31

Alibakhshikenari, Mohammad, Bal S. Virdee, Ayman A. Althuwayb, Dion Mariyanayagam, and Ernesto Limiti. "Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End Transceivers." Electronics 10, no. 11 (2021): 1264. http://dx.doi.org/10.3390/electronics10111264.

Full text

Abstract:

The results presented in this paper show that by employing a combination of metasurface and substrate integrated waveguide (SIW) technologies, we can realize a compact and low-profile antenna that overcomes the drawbacks of narrow-bandwidth and low-radiation properties encountered by terahertz antennas on-chip (AoC). In addition, an effective RF cross-shaped feed structure is used to excite the antenna from its underside by coupling, electromagnetically, RF energy through the multi-layered antenna structure. The feed mechanism facilitates integration with the integrated circuits. The proposed antenna is constructed from five stacked layers, comprising metal–silicon–metal–silicon–metal. The dimensions of the AoC are 1 × 1 × 0.265 mm3. The AoC is shown to have an impedance match, radiation gain and efficiency of ≤ −15 dB, 8.5 dBi and 67.5%, respectively, over a frequency range of 0.20–0.22 THz. The results show that the proposed AoC design is viable for terahertz front-end applications.

APA, Harvard, Vancouver, ISO, and other styles

32

Portosi, Vincenza, Antonella Maria Loconsole, and Francesco Prudenzano. "A Split Ring Resonator-Based Metamaterial for Microwave Impedance Matching with Biological Tissue." Applied Sciences 10, no. 19 (2020): 6740. http://dx.doi.org/10.3390/app10196740.

Full text

Abstract:

A metamaterial lens based on a split ring resonator (SRR) array has been designed and optimized to improve the focusing and the penetration depth in human biological tissue of a microwave beam irradiated by a substrate integrated waveguide (SIW) cavity backed patch antenna. The impedance matching of the antenna loaded with human tissue is strongly improved. The simulations have been performed by using CST Microwave Studio®. A prototype of the device has been fabricated with the printed board circuits (PCB) process and has been characterized using a Network Analyzer and an antenna measurement system in anechoic chamber. A novel microwave applicator for hyperthermia therapy of skin cancer could be developed. The performances of the proposed applicator have been evaluated in terms of measured S11 scattering parameter modulus and simulated power loss density. The obtained results indicate that an SRR-based metamaterial is a promising solution for external microwave applicators to employ in dermatology.

APA, Harvard, Vancouver, ISO, and other styles

33

Althuwayb, Ayman A. "On-Chip Antenna Design Using the Concepts of Metamaterial and SIW Principles Applicable to Terahertz Integrated Circuits Operating over 0.6–0.622 THz." International Journal of Antennas and Propagation 2020 (December 7, 2020): 1–9. http://dx.doi.org/10.1155/2020/6653095.

Full text

Abstract:

This research work presents the investigation of realizing an on-chip antenna based on the metamaterial concept, which is working over the terahertz (THz) band for applications in integrated circuits. The proposed on-chip antenna is constructed of five stacked layers of polyimide and aluminum as top and bottom substrates, radiation patches, ground plane, and feed line. The four square-shaped radiation patches are implemented on the 50 μ m top-polyimide substrate, and the feed line is realized on the 50 μ m bottom-polyimide layer by designing the simple square microstrip lines, which are all connected to each other and then excited by waveguide port. The ground plane including a coupling square slot has sandwiched between the top- and bottom-polyimide layers. The coupling square slot etched on the ground plane is exactly placed under the patch to optimum transfer the electromagnetic signal from the bottom feed line to the top radiation patch. To achieve high performance parameters without increasing the antenna's physical dimensions, the metamaterial and substrate integrated waveguide properties have been applied to the antenna structure by implementing linear tapered slots on the patch top surfaces and metallic via holes throughout the middle ground plane connecting top and bottom substrates to each other. The slots play the role of series left-handed (LH) capacitors (CL) and the via holes act as shunt LH inductors (LL). The overall dimension of the proposed metamaterial-based on-chip antenna is 1000 × 1000 × 100 μm3. This antenna can cover the frequency band from 0.6 THz to 0.622 THz, which is equal to 20 GHz bandwidth. The radiation gain and efficiency across the operating frequency band varies from 1.1 dBi to 1.8 dBi, and from 58% to 60.5%, respectively. The results confirm that the proposed on-chip antenna with compact dimensions, wide bandwidth over the terahertz domain, low profile, cost effective, simple configuration, and easy to manufacture can be potentially appropriate for terahertz integrated circuits.

APA, Harvard, Vancouver, ISO, and other styles

34

Alavi, Rezvan Rafiee, Rashid Mirzavand, Ali Kiaee, Ruska Patton, and Pedram Mousavi. "Detection of the Defective Vias in SIW Circuits From Single/Array Probe(s) Data Using Source Reconstruction Method and Machine Learning." IEEE Transactions on Microwave Theory and Techniques 67, no. 9 (2019): 3757–70. http://dx.doi.org/10.1109/tmtt.2019.2931298.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Samanta, Kamal K. "Advanced multilayer thick‐film technology and TFMS, CPW, and SIW up to 180 GHz for cost‐effective ceramic‐based circuits and modules." IET Microwaves, Antennas & Propagation 12, no. 7 (2018): 1064–71. http://dx.doi.org/10.1049/iet-map.2016.1065.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Hernandez, Yoanlys, Bernhard Stampfer, Tibor Grasser, and Michael Waltl. "Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies." Crystals 11, no. 9 (2021): 1150. http://dx.doi.org/10.3390/cryst11091150.

Full text

Abstract:

All electronic devices, in this case, SiC MOS transistors, are exposed to aging mechanisms and variability issues, that can affect the performance and stable operation of circuits. To describe the behavior of the devices for circuit simulations, physical models which capture the degradation of the devices are required. Typically compact models based on closed-form mathematical expressions are often used for circuit analysis, however, such models are typically not very accurate. In this work, we make use of physical reliability models and apply them for aging simulations of pseudo-CMOS logic inverter circuits. The model employed is available via our reliability simulator Comphy and is calibrated to evaluate the impact of bias temperature instability (BTI) degradation phenomena on the inverter circuit’s performance made from commercial SiC power MOSFETs. Using Spice simulations, we extract the propagation delay time of inverter circuits, taking into account the threshold voltage drift of the transistors with stress time under DC and AC operating conditions. To achieve the highest level of accuracy for our evaluation we also consider the recovery of the devices during low bias phases of AC signals, which is often neglected in existing approaches. Based on the propagation delay time distribution, the importance of a suitable physical defect model to precisely analyze the circuit operation is discussed in this work too.

APA, Harvard, Vancouver, ISO, and other styles

37

McNeill, Neville, Dimitrios Vozikis, Rafael Peña-Alzola, et al. "Gate Driver Circuit with All-Magnetic Isolation for Cascode-Connected SiC JFETs in a Three-Level T-Type Bridge-Leg." Energies 16, no. 3 (2023): 1226. http://dx.doi.org/10.3390/en16031226.

Full text

Abstract:

This article presents a gate driver circuit with all-magnetic isolation for driving silicon carbide (SiC) power devices in a three-level T-type bridge-leg. Gate driver circuitry for SiC devices has to be tolerant of rapid common-mode voltage changes. With respect to the resultant potentially problematic common-mode current paths, an arrangement of transformers is proposed for supplying the power devices with drive signals and power for their local floating gate driver circuits. The high-frequency carrier phase-switching technique is used to reduce the number of transformers. Signal timing and other implementation issues are addressed when using this arrangement with the T-type converter. The circuit is demonstrated in a 540 V bridge-leg constructed around 650 V and 1200 V cascode-connected normally-on SiC junction field effect transistors (JFETs).

APA, Harvard, Vancouver, ISO, and other styles

38

Shepherd, Paul, Dillon Kaiser, Michael Glover, Sonia Perez, A. Matt Francis, and H. Alan Mantooth. "Integrated Protection Circuits for an NMOS Silicon Carbide Gate Driver Integrated Circuit." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000218–23. http://dx.doi.org/10.4071/hitec-wp14.

Full text

Abstract:

Recent work has been done to build a Silicon Carbide (SiC) gate driver IC for use with a 1,200V SiC power MOSFET. Protection circuits form an important part of the complete gate driver/power device system. Under-voltage lockout (UVLO) protection disables the gate driver when power supplies are insufficient to turn the power device fully on. Desaturation detection provides protection to the power device by recognizing over-current conditions and disabling the gate driver for a set duration. The protection circuits described in this paper are integrated with a novel SiC gate-driver architecture utilizing discrete 20 V and 40 V power supplies. Two separate UVLO circuits monitor these power supplies while being powered by the 20 V supply. The desaturation detection circuit ensures that the power device is in its safe operating area. The desaturation detection circuit is designed to work with a 20A SiC MOSFET in less than 500ns, while avoiding false triggering on leading-edge spikes. Bench test results of the two UVLOs and desaturation detection circuits were captured and are compared to simulated results.

APA, Harvard, Vancouver, ISO, and other styles

39

Pestov, M. V., and N. Kh Ongarbaev. "Some Aspects of the Problem of Bird Protection From electrocution on Overhead Power Lines in Kazakhstan." Raptors Conservation, no. 2 (2023): 390–94. http://dx.doi.org/10.19074/1814-8654-2023-2-390-394.

Full text

Abstract:

The problem of mass death of birds of prey from electrocution on overhead power lines (PL) of medium power (6–10 kV) in the territory of Kazakhstan is well known since the times of the USSR and is still relevant. Our team has been dealing with this problem since 2010 (Saraev, Pestov, 2011; Pestov et al., 2012; 2015; 2019; 2021). Over the past years, we have repeatedly encountered various aspects of this problem and observed the consequences for ornithofauna from the use of certain technical solutions in the design, construction, operation, and reconstruction of PL. The present report is devoted to a brief review of some options of technical solutions in equipping PL in Kazakhstan. Numerous studies have confirmed that the most dangerous structure for birds is a 180˚ inverted T-shaped metal grounded traverse with pin insulators mounted on a reinforced concrete pole, combined with an uninsulated current-carrying wire. Unfortunately, this design of PLs is still the most widely used in Kazakhstan, their total length is tens of thousands of kilometers. Attempts to make it safer for birds by installing distracting T-shaped attachments, deterrent metal “whiskers” or additional “blank” insulators proved ineffective, and in the case of “whiskers” – harmful. It is obvious that the most optimal from the point of view of biodiversity conservation is the refusal to use PLs in favor of alternative solutions, which allows not only to completely eliminate the death of birds from electrocution and mechanical damage from collision with wires, but also preserves the aesthetic value of the landscape, which is especially important for protected areas. A vivid example of such a progressive and responsible approach in Kazakhstan is the Beineu-Shymkent main gasline owned by Beineu-Shymkent Gas Pipeline LLP. This pipeline does not have an associated PL, electrochemical protection in this case is provided by cathodic protection stations (CPS). All CPSs on this gas pipeline are powered by modular-packaged electrical power plants with Capstone C30/C65 autonomous microturbine units manufactured by Capstone Green Energy Corporation (CGRN) from the USA. The official distributor of CGRN in Kazakhstan is Synergy Astana LLP. We hope that in the future this technology will be widely used in the construction of new pipelines and consider it necessary to promote this experience. Another priority technical solution is the use of self-supporting insulated wire (SIW) for PL installing, which not only reduces the probability of electrical injuries, but also practically eliminates the possibility of short circuits during operation. However, the use of SIW alone does not completely eliminate bird deaths. As our studies on PLs running along the Beyneu-Chelkar railroad have shown, the possibility of electrocution persists when birds come into contact with devices used to protect PLs made of SIW from atmospheric overvoltages (lightning). The degree of danger for birds depends on the design of these devices. The death of birds of prey from electrocution has been recorded on PLs equipped with air-gap arresters. At the same time, no bird deaths have been recorded on overhead power lines equipped with longflash-over arresters without spark gaps. On this basis, the use of SIW in combination with long-flash-over arresters can be recommended throughout Kazakhstan. In the best case scenario, this design could be additionally equipped with a T-shaped insulated perch on the pole arm, distracting large birds of prey from using the SIW as a perch, which is observed in its absence. In recent years, during the construction and reconstruction of overhead power lines in Kazakhstan, the >-shaped dovetail traverse with suspended insulators has been widely used instead of the traditional traverse with pin insulators. The use of this structure reduces the number of dead birds, but, unfortunately, does not exclude the facts of deaths of large birds of prey, including eagles, which, due to insufficiently large distance between the horizontal component of the traverse and the current-carrying wire above it (about 70 cm), can cause a short circuit by touching the head of the wire. It is obvious that by making minor changes leading to increase of the above-mentioned gap up to 100 cm, the dovetail traverse design would become practically safe for birds. In some regions of Kazakhstan, presumably from the USSR times, overhead power lines made on wooden poles and overhead power lines on reinforced concrete poles with wooden arms have been preserved. Due to the dielectric properties of wood, these structures are relatively safe for birds in terms of the possibility of electrocution. However, the share of such overhead power lines is small and is likely to decrease further over time. It is obvious that the use of modern wooden poles and insulated composite arms is very promising, however, we are not aware of the facts of application of these technologies in Kazakhstan at present. In all other cases, relative safety of PLs with traditional horizontal crossarms with pin insulators and “dovetail” arms can be ensured through the use of polymer bird protection devices (BPD), isolating small (50–100 cm) sections of current-carrying wires in the place of their attachment to insulators on the crossarms. In the last decade, the practice of using isolating BPDs in Kazakhstan is becoming more and more widespread. However, according to our observations, the share of ornithocidal PLs not equipped with BPDs is still very high, and the real effectiveness of BPDs strongly depends on the quality of the products used and strict compliance with technical requirements for their selection and installation. Thus, in Kazakhstan in recent years there has been obvious progress in solving at the technical level the problem of mass death of birds in PL from electrocution, but the measures taken are not yet sufficient for the comprehensive solution of this problem. It is obvious that for a wider and faster introduction of advanced technologies in this area it is necessary to promptly adjust the existing regulatory framework.

APA, Harvard, Vancouver, ISO, and other styles

40

Hu, Bo Xue, He Li, Zhuo Wei, et al. "An Auxiliary Power Supply for Gate Drive of Medium Voltage SiC Devices in High Voltage Applications." Materials Science Forum 924 (June 2018): 836–40. http://dx.doi.org/10.4028/www.scientific.net/msf.924.836.

Full text

Abstract:

A high-reliability auxiliary power supply (APS) for gate drive circuits is crucial to utilization of emerging medium voltage (MV ≥ 10 kV) Silicon Carbide (SiC) devices in high voltage applications. This paper proposes an active voltage divider based APS with lower arm voltage regulation. The proposed APS circuit is targeting the application of MV SiC devices in modular multilevel converters (MMCs). It can harvest energy from a MV (≥ 7 kV) dc bus to provide an isolated low voltage output to gate drive circuits of MV SiC devices. Compared to existing APS solutions, it can achieve a high input voltage (≥ 7 kV) with simple circuit structure and control scheme. In this paper, the working principle of the proposed APS is presented and a circuit design example is shown. A circuit prototype with 7 kV input and 15 V/10 W output has been built and tested to verify the effectiveness of the proposed solution.

APA, Harvard, Vancouver, ISO, and other styles

41

Yu, Jiajia. "Influence of SiC MOSFET Drive Control Parameters on Short Circuit Characteristics." Applied and Computational Engineering 125, no. 1 (2025): 40–46. https://doi.org/10.54254/2755-2721/2025.20008.

Full text

Abstract:

This paper focuses on the short-circuit characteristics of SiC MOSFETs. The SiC MOSFET, categorized as a third-generation wide bandgap power semiconductor, shows significant promise for use in high-voltage applications. Short-circuit faults are categorized into hard-switch short circuits and load short circuits. The drive parameters, including Gate Resistance, Gate-Source Voltage, and DC Bus Voltage, significantly affect the short-circuit characteristics. Increasing Gate Resistance can slow down the rise rate and peak value of short-circuit current, reducing the risk of device damage, although too much Gate Resistance will slow down the switching speed. Raising the Gate-Source Voltage increases the short-circuit current peak and accelerates the rise time, but too high a Gate-Source Voltage increases the risk of device damage. The DC Bus Voltage does not have a significant effect on the short-circuit current but primarily influences the Gate-Source Voltage. Studying the influence of drive parameters on short-circuit characteristics is crucial for optimizing design and improving system stability

APA, Harvard, Vancouver, ISO, and other styles

42

Barlow, M., A. M. Francis, and J. Holmes. "Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure." International Symposium on Microelectronics 2017, no. 1 (2017): 000526–30. http://dx.doi.org/10.4071/isom-2017-tha22_152.

Full text

Abstract:

Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 °C for extended periods of time. Many environments where high temperature in-situ electronics are desired also have large pressures as well. While some validation has been done for high pressure environments, limited information on the parametric impact of pressure on SiC integrated circuits is available. This paper takes two leading-edge SiC integrated circuit processes using two different classes of devices (JFET and CMOS), and measures the performance through temperature and pressure variation. Circuit functionality was verified at high temperature (475 °C) as well as high pressure (1700 psig).

APA, Harvard, Vancouver, ISO, and other styles

43

Dai, Chenghu, Yixiao Lu, Wenjuan Lu, Zhiting Lin, Xiulong Wu, and Chunyu Peng. "Low-Power Single Bitline Load Sense Amplifier for DRAM." Electronics 12, no. 19 (2023): 4024. http://dx.doi.org/10.3390/electronics12194024.

Full text

Abstract:

With the significant growth in modern computing systems, dynamic random access memory (DRAM) has become a power/performance/energy bottleneck in data-intensive applications. Both the power management mechanism and downscaling method face decreasing performance or difficulties in the smaller footprint of the DRAM capacitor. Since optimizing the circuit of sense amplifier (SA) is an efficient method to reduce energy consumption, we propose two single bitline load sense amplifier (SBLSA) circuits, i.e., a redundant voltage discharged SBLSA (RVD-SBLSA) circuit and a bit aware SBLSA (BA-SBLSA) circuit, to improve conventional and single bitline write (SBW) circuits. The RVD-SBLSA circuit utilizes a clamp diode to discharge redundant voltage over VDD/2 with an additional working stage. The BA-SBLSA circuit abandons the single bitline load (SBL) circuit during read and write ‘1’ operations. The RVD-SBLSA circuit can offer the lowest total energy consumption, and the BA-SBLSA circuit can make a better balance between energy consumption and latency. Through the simulation results, the proposed circuits can efficiently reduce energy consumption or balance energy consumption and latency and show huge potentials in very large-scale integrated circuits.

APA, Harvard, Vancouver, ISO, and other styles

44

Lee, Seungjik, Ockgoo Lee, and Ilku Nam. "Review of Short-circuit Protection Circuits for SiC MOSFETs." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 23, no. 2 (2023): 128–37. http://dx.doi.org/10.5573/jsts.2023.23.2.128.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Li, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs." Applied and Computational Engineering 49, no. 1 (2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.

Full text

Abstract:

SiC MOSFETs have exhibited considerable benefits in high-frequency, high-voltage, and high-temperature power electronics applications with outstanding material attributes as a result of the rapid advancement of power electronics technology. SiC MOSFETs slower short-circuit tolerance and faster switching rates provide new issues for the short-circuit prevention technology. In the opening section of the study, Si and SiC MOSFETs are compared and evaluated using various models and parametric factors. It has been demonstrated that SiC MOSFETs outperform Si MOSFETs in a variety of conditions and applications. The many SiC MOSFET short-circuit failure types as well as their underlying theories are initially explained in the papers main body. In addition, it examines the fundamentals of short-circuit test procedures and SiC MOSFET test circuits. The issues and limitations of the currently available SiC MOSFET short-circuit protection technology are then explored, along with factors impacting the short-circuit of SiC MOSFETs that are thoroughly examined. Lastly, the SiC MOSFET short-circuit protection technology development trend is forecasted, and potential future areas for improvement and innovation are considered. SiC MOSFET short-circuit protection technology will be enhanced and optimized to satisfy the needs of efficient and dependable power electronic systems as technology advances and application requirements expand.

APA, Harvard, Vancouver, ISO, and other styles

46

Li, Hui, Renze Yu, Yi Zhong, Ran Yao, Xinglin Liao, and Xianping Chen. "Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET." Micromachines 10, no. 5 (2019): 314. http://dx.doi.org/10.3390/mi10050314.

Full text

Abstract:

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection circuit, energy absorption circuit, and snubber circuit of the SSCB were designed and analyzed. Lastly, a prototype of the DC SSCB with SiC MOSFET was developed, tested, and compared with the SSCB with Silicon (Si) insulated gate bipolar transistor (IGBT). Experimental results show that the designed circuits of SSCB with SiC MOSFET are valid. Also, the developed miniature DC SSCB with the SiC MOSFET exhibits faster reaction to the fault and can reduce short circuit time and fault current in contrast with the SSCB with Si IGBT. Hence, the proposed SSCB can better meet the requirements of DC microgrid protection.

APA, Harvard, Vancouver, ISO, and other styles

47

Maralani, A., Michael S. Mazzola, David C. Sheridan, Igor Sankin, and Volodymyr Bondarenko. "Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design." Materials Science Forum 615-617 (March 2009): 915–18. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.915.

Full text

Abstract:

The design of analog integrated circuits, for instance, the operational amplifiers, have been widely perfected with devices and processes available in silicon. However, analogous circuits have been the subject of research in Silicon Carbide (SiC). Among SiC devices, 4H-SiC Lateral-Trench JFET (LTJFET) transistor offers advantages and new opportunities to make affordable and reliable analog integrated circuits for harsh environment. In this paper: (1) SiC LTJFET is characterized for modeling and simulation, (2) effect of temperature variation on SiC LTJFET threshold voltage and small signal parameters are reported, (3) gain performance and small signal parameters of the basic analog circuit block, Common Source (CS) amplifier, based on the variation of the load transistors threshold voltage (Vth) are studied and analyzed, and (4) frequency and transient response of the cascoded CS amplifier (CS-Cas) are reported.

APA, Harvard, Vancouver, ISO, and other styles

48

Ke, Jinkun, Jinbo Feng, Yuchao Huang, Zhaoliang Guan, Hangyu Xu, and Ming Zhao. "Design of Active Closed-loop Driver Chip for SiC." Journal of Physics: Conference Series 2625, no. 1 (2023): 012058. http://dx.doi.org/10.1088/1742-6596/2625/1/012058.

Full text

Abstract:

Abstract The SiC active control scheme mainly uses phased control, which makes the circuit implementation complex and unfavorable to design due to the need for detection circuits. And the longer feedback delay will affect the accuracy of the control. In this paper, a closed-loop driving SiC scheme is proposed. By integrating the driver circuit, protection circuit, and detection circuit on one chip, the SiC drive current is controlled by a staged control scheme, which can reduce the switching loss with low current and voltage overcharge. The specific circuit design uses Hua Hong BCD350GE technology, which mainly includes a power supply module, a feedback signal processing module, an Undervoltage protection module, a desaturation protection module, a logic control module, and a driver output module, and is verified by beat virtuoso simulation. Test results show that compared with Infineon driver chip 1EDS20I12SV, the switching loss of SiC is reduced by 25.75% when driving SiC at the same turn-off voltage, and the loss reduction is more obvious.

APA, Harvard, Vancouver, ISO, and other styles

49

Zhang, ZiHao, Jebreel M. Salem, and Dong Sam Ha. "A High Temperature 4H-SiC Voltage Reference for Depletion Mode GaN-Based Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (2017): 000118–21. http://dx.doi.org/10.4071/2380-4491.2017.hiten.118.

Full text

Abstract:

Abstract High temperature electronics are highly demanded for many applications such as automotive, space, and oil and gas exploration. Electronic circuits for those applications are required to operate reliably without using bulky cooling systems. Circuits based on silicon (Si) suffer from high leakage currents at high temperatures. Silicon Carbide (SiC) circuits, on the other hand, are suitable for high temperature applications due to the wide bandgap and offer high breakdown voltage and low leakage current. This paper presents a negative voltage reference for high temperature applications using commercial-off-the-shelf (COTS) 4H-SiC transistors. The proposed voltage reference adopts Widlar bandgap reference topology, and it aims to provide a negative reference voltage for Gallium Nitride (GaN) circuits operating at high temperatures. Measurement results indicate that the proposed circuit provides a negative reference voltage with a low temperature coefficient of 42 ppm/°C for temperatures ranging from 25 °C to 250 °C. The proposed circuit also operates reliably for a wide supply voltage range of −7.5 V to −15 V for the temperature range.

APA, Harvard, Vancouver, ISO, and other styles

50

Liu, Zheng. "Analysis and research of EMI filter based on SiC power device." Applied and Computational Engineering 4, no. 1 (2023): 32–37. http://dx.doi.org/10.54254/2755-2721/4/20230341.

Full text

Abstract:

The new electronic devices represented by SiC have brought new opportunities to improve the efficiency and power density of the drive circuit system. However, the complex circuit drive system using the new electronic devices still faces many challenges to give full play to its advantages. This paper focuses on the electromagnetic interference of drive circuit. Research on Filter Circuit, through in-depth study of the filter circuit, several second-order active circuits are proposed to filter the signal interference of the conduction path. Finally, an adjustable quality factor bandstop circuit is designed. The proposed circuit has good adjustment and feedback functions when filtering interference signals.

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'SIW Circuits'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles