Relevant bibliographies by topics / Small-Signal Parameter Extraction

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Small-Signal Parameter Extraction'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Small-Signal Parameter Extraction"

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Zhang, Xiao Wei, Peng Xu, Ke Jin Jia, Zhi Hong Feng, and Zheng Ping Zhao. "Inaln/GaN HEMT Small-Signal Parameter Extraction." Advanced Materials Research 690-693 (May 2013): 564–68. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.564.

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We use S-Parameter Methodto extract device parameter of InAlN/GaN HEMT in this paper. We find thatparasitic capacitance and parasitic inductance can be extracted in traditionaltest structure method, but do nothing about parasitic resistor. Cold parameter methodcan extract parasitic resistor efficiently, but there is greater error inparasitic capacitance and parasitic inductance extraction. We propose a methodwhich combines test structure method and cold parameter method to extract parasitic parameteraccurately. We can acquire intrinsic parameters through getting rid ofparasitism parameters, and can fitting test outcome satisfactorily. It canreflect accurately the physical characteristics of GaN HEMT devices, and givesfeedback and guidance to device technology at the same time.
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Wurtz, L. T. "GaAsFET and HEMT small-signal parameter extraction from measured S-parameters." IEEE Transactions on Instrumentation and Measurement 43, no. 4 (1994): 655–58. http://dx.doi.org/10.1109/19.310183.

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Yadav, Rahis Kumar, Pankaj Pathak, and R. M. Mehra. "Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 37, no. 1 (January 2, 2018): 386–400. http://dx.doi.org/10.1108/compel-02-2017-0074.

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Purpose This paper aims to report small-signal parameter extraction and simulation of enhanced dual-channel dual-material gate AlGaN/GaN high electron mobility transistor (HEMT) for the first time for the characterization of a device in microwave range of frequency. Design/methodology/approach For parameter extraction, a standard and well-known direct parameter extraction methodology is applied. Extrinsic elements of small-signal circuit model are extracted from measured S-parameters obtained using pinch-off cold field effect transistor (FET) biasing in the first step at a low frequency range and at a higher frequency range in the second step to ensure higher extraction accuracy. Intrinsic elements are extracted from intrinsic Y-parameters that are obtained after de-embedding all the extrinsic parasitic elements of the device. Figure of merits of radio frequency are also derived from the measured results and S-parameters of the proposed device. Findings Small signal parameters of the proposed device circuit model are extracted using the standard direct parameter extraction technique. Analysis of microwave figure of merits for device include maximum oscillation frequency, cut-off frequency, current gain, transducer power gain, available power gain, maximum stable gain, transconductance, drain conductance, stern stability factor and time delay. Practical implications The paper bridges the gaps between theory and experimental practices by validating extracted results with reported results of structurally matching devices. Originality/value An enhanced device structure investigated for small signal parameters incorporates field plate over dual metal engineered gate to provide better electric field uniformity, effective suppression of short channel effect, reduction in current collapse, improvement in carrier transport efficiency and enhancement in drain current capabilities.
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Yu, Le, Yingkui Zheng, Sheng Zhang, Lei Pang, Ke Wei, and Xiaohua Ma. "Small-signal model parameter extraction for AlGaN/GaN HEMT." Journal of Semiconductors 37, no. 3 (March 2016): 034003. http://dx.doi.org/10.1088/1674-4926/37/3/034003.

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Bousnina, S., P. Mandeville, A. B. Kouki, R. Surridge, and F. M. Ghannouchi. "Direct parameter-extraction method for HBT small-signal model." IEEE Transactions on Microwave Theory and Techniques 50, no. 2 (2002): 529–36. http://dx.doi.org/10.1109/22.982232.

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Fusco, V. F. "Symbolic transfer functions for MESFET small-signal parameter extraction." IEE Proceedings G Circuits, Devices and Systems 138, no. 2 (1991): 217. http://dx.doi.org/10.1049/ip-g-2.1991.0040.

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Xu, Zhixia, and Jianjun Gao. "Semi-analytical small signal parameter extraction method for PIN photodiode." IET Optoelectronics 11, no. 3 (June 1, 2017): 103–7. http://dx.doi.org/10.1049/iet-opt.2016.0051.

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Jing Huang, K. A. Corzine, and M. Belkhayat. "Online Synchronous Machine Parameter Extraction From Small-Signal Injection Techniques." IEEE Transactions on Energy Conversion 24, no. 1 (March 2009): 43–51. http://dx.doi.org/10.1109/tec.2008.2008953.

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Sabat, Samrat L., Siba K. Udgata, and K. P. N. Murthy. "Small signal parameter extraction of MESFET using quantum particle swarm optimization." Microelectronics Reliability 50, no. 2 (February 2010): 199–206. http://dx.doi.org/10.1016/j.microrel.2009.10.005.

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Li, B., and S. Prasad. "Basic expressions and approximations in small-signal parameter extraction for HBT's." IEEE Transactions on Microwave Theory and Techniques 47, no. 5 (May 1999): 534–39. http://dx.doi.org/10.1109/22.763151.

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Dissertations / Theses on the topic "Small-Signal Parameter Extraction"

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Kong, Frederick. "Silicon-on-sapphire MOSFET parameter extraction by small-signal measurement /." [St. Lucia, Qld.], 2002. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe17051.pdf.

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Alsabbagh, Mohamad. "Parasitics and Current-Dispersion Modeling of AlGaN/GaN HEMTs Fabricated on Different Substrates Using the Equivalent-Circuit Modeling Technique." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/40706.

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Electrical equivalent circuit modeling of active components is one of the most important approaches for modeling high-frequency high-power devices. Amongst the most used microwave devices, AlGaN/GaN HEMTs demonstrated their superior performance, making them highly suitable for 5G, wireless and satellite communications. Despite the remarkable performance of AlGaN/GaN HEMTs, these devices reside on substrates that invoke limitations on the operating-frequency, power-efficiency, and current dispersion phenomenon. Also, there is a limitation in present parameters extraction techniques being not able to consider both the substrate effect (Silicon, Silicon Carbide, and Diamond) and the asymmetrical GaN HEMT structure. In this thesis work, a single extrinsic parameters extraction technique using a single small-signal topology takes into account both the asymmetrical GaN HEMT structure and the different substrate types with their parasitic conduction will be developed and studied for the first time. Moreover, large-signal modeling using Quasi-Physical Zone Division technique has been applied to both GaN/D and GaN/SiC to model the isothermal-trapping free drain current, and combined with a new simple technique for comparing performance between active devices in terms of current-dispersion. The models were verified by simulating the small-signal S-parameters, large-signal IV characteristics, and single-tone load-pull. High accuracy was achieved compared to the measurement data available in the technical literature and obtained from fabricated devices.
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Malan, Pieter Jacob De Villiers. "Low impedance characterisation and modeling of high power LDMOS devices." Thesis, Stellenbosch : University of Stellenbosch, 2005. http://hdl.handle.net/10019.1/2510.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2005.
In RF power transistor characterisation, the designer is confronted with low impedance measurements (typically from 1 Ohm to 12 Ohm). These transistors are contained in metal-ceramic packages of which the lead widths vary with power capability. This thesis presents a high-quality fixture design with low impedance TRL calibration standards for characterisation of an LDMOS transistor. Pre-matching networks are used to transform to the low impedance environment. Since these pre-matching networks are independent of the termination impedance, the low impedance port can always be designed to comply with the same dimension as the device which is being measured.
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Chen, Kuan-Hsu, and 陳冠旭. "RF MOSFET Small Signal Equivalent Circuit Model Parameter Extraction for Various Biases and Geometries." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/52970935108922010651.

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碩士
國立交通大學
電子工程系所
97
Small signal equivalent circuit models and the corresponding parameter extraction methods have been developed in this thesis for RF CMOS circuit simulation. Both two-port 3-terminal (3T) and four-port 4-terminal (4T) RF MOSFETs are covered in this work. The former one – 3T MOSFETs with a common source topology is a conventional one widely used in RF circuits, and the test-key layout is arranged in a two-port configuration with a common ground for source and body tied together to fit the two-port RF measurement system. In fact, source and body terminals are not always connected together in the practice of RF circuit design, the traditional two-port test-key cannot capture a whole spectrum of 4T MOSFET’s features and cannot adequately represent 4T MOSFET’s characteristics over high frequencies. To solve this critical problem, the latter one – four-port 4T RF MOSFETs are designed and fabricated in 0.13um RF CMOS process for high frequency characterization and model development in this work. In this thesis, the basic principles of two-port and multi-port scattering parameters (S-parameters) will be reviewed in the first place. Then, the small signal equivalent circuits and parameter extraction methods developed for two-port 3T device under various biases and geometries will be discussed in detail. Based on what have been done for two-port 3T MOSFET, a modified equivalent circuit relevant to four-port 4T test structures, and the corresponding fundamental works, such as de-embedding method and parameter extraction flow have been carried out. Finally, an extensive verification has been performed on the proposed small signal equivalent circuit models through simulation under various biases. The model accuracy is certified over a broad frequency up to 40GHz and various bias conditions – linear and saturation. More importantly, the model parameters of the developed equivalent circuit models manifest themselves a promisingly good scalability over various geometries in MOSFETs, such as gate lengths and gate finger numbers under a specified finger width. The accuracy over frequencies and biases and scalability over device geometries is useful to improve accuracy of high frequency circuit simulation and facilitate RF CMOS integrated circuit development.
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Chen, Chun-chung, and 陳俊中. "Extracting MOSFET Small Signal Equivalent Circuit and Substrate Parameters with Four Port De-embedding Method." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/4322rd.

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碩士
國立中山大學
電機工程學系研究所
97
Characteristics of small signal components for circuit designers are very important in circuit design. Many researchers have been working hard on removing the unwanted parasitic effects which is used to get the intrinsic characteristics of the small signal parameters. In this thesis, we propose a novel four-port de-embedding procedure which based on two-port cascade structure de-embedding procedure and combined with metal and polysilicon ground-shielded technology, and let four terminals of MOSFET are connected individually to four signal pads. With such de-embedding procedure, the intrinsic and substrate element values of small-signal model are extracted by different bias.
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Book chapters on the topic "Small-Signal Parameter Extraction"

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Sharma, Swati, and Vinod Kumar. "An Accurate and Improved GaN HEMT Small Signal Parameter Extraction." In Internet of Things and Big Data Applications, 253–62. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39119-5_21.

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"Small-Signal Modeling and Parameter Extraction of HBT." In Heterojunction Bipolar Transistors for Circuit Design, 117–68. Singapore: John Wiley & Sons Singapore Pte. Ltd, 2015. http://dx.doi.org/10.1002/9781118921531.ch5.

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Chetibi-Riah, Mouna, Mohamed Masmoudi, Hichame Maanane, Jrme Marcon, Karine Mourgues, Mohamed Ketata, and Philippe Eudeline. "Accurate LDMOS Model Extraction Using DC, CV and Small Signal S Parameters Measurements for Reliability Issues." In Micro Electronic and Mechanical Systems. InTech, 2009. http://dx.doi.org/10.5772/7015.

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Conference papers on the topic "Small-Signal Parameter Extraction"

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Goyal, Umakant, and Meena Mishra. "Improved parameter extraction technique for GAN HEMT's small signal model." In 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE). IEEE, 2014. http://dx.doi.org/10.1109/icemelec.2014.7151144.

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Sabat, Samrat L., Vijay Raju, and Layak Ali. "MESFET small signal model parameter extraction using particle swarm optimization." In 2008 International Conference on Microelectronics - ICM. IEEE, 2008. http://dx.doi.org/10.1109/icm.2008.5393521.

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Sabat, S. L., and S. K. Udgata. "Differential Evolution Algorithm for MESFET Small Signal Model Parameter Extraction." In 2010 International Symposium on Electronic System Design (ISED 2010). IEEE, 2010. http://dx.doi.org/10.1109/ised.2010.46.

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Zorio, C. F., M. Bodea, and I. Rusu. "Small signal linear circuit parameter extraction method using symbolic computation." In 2008 11th International Conference on Optimization of Electrical and Electronic Equipment (OPTIM). IEEE, 2008. http://dx.doi.org/10.1109/optim.2008.4602492.

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Lee, Seonghearn, Cheon Soo Kim, and Hyun Kyu Yu. "Accurate Small-Signal Modeling and Parameter Extraction for RF MOSFETs." In 2000 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2000. http://dx.doi.org/10.7567/ssdm.2000.e-6-6.

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Xu, Ziyan, Guofu Niu, Lan Luo, Partha S. Chakraborty, Peng Cheng, Dylan Thomas, and John D. Cressler. "Cryogenic RF Small-Signal Modeling and Parameter Extraction of SiGe HBTs." In 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). IEEE, 2009. http://dx.doi.org/10.1109/smic.2009.4770509.

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Jing Huang. "On-line synchronous machine parameter extraction from small signal-injection techniques." In 2009 IEEE/PES Power Systems Conference and Exposition (PSCE). IEEE, 2009. http://dx.doi.org/10.1109/psce.2009.4840249.

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Wenna Song, Jun Fu, Yudong Wang, Wei Zhou, Wei Zhang, Jie Cui, Yue Zhao, Gaoqing Li, and Zhihong Liu. "An accurate parameter extraction method for RF LDMOSFET small-signal model." In 2015 IEEE International Wireless Symposium (IWS). IEEE, 2015. http://dx.doi.org/10.1109/ieee-iws.2015.7164534.

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Seonghearn Lee and Hyun Kyu Yu. "Parameter extraction technique for the small-signal equivalent circuit model of microwave silicon MOSFETs." In Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. IEEE, 1997. http://dx.doi.org/10.1109/cornel.1997.649357.

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Zhang, Linghan, Yunzhou Wang, Yicong Liu, and Xusheng Tang. "A new intrinsic parameter extraction approach for small-signal model of AlGaN/GaN devices." In 2015 IEEE 11th International Conference on ASIC (ASICON ). IEEE, 2015. http://dx.doi.org/10.1109/asicon.2015.7517150.

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