Academic literature on the topic 'Small-Signal Parameter Extraction'
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Journal articles on the topic "Small-Signal Parameter Extraction"
Zhang, Xiao Wei, Peng Xu, Ke Jin Jia, Zhi Hong Feng, and Zheng Ping Zhao. "Inaln/GaN HEMT Small-Signal Parameter Extraction." Advanced Materials Research 690-693 (May 2013): 564–68. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.564.
Full textWurtz, L. T. "GaAsFET and HEMT small-signal parameter extraction from measured S-parameters." IEEE Transactions on Instrumentation and Measurement 43, no. 4 (1994): 655–58. http://dx.doi.org/10.1109/19.310183.
Full textYadav, Rahis Kumar, Pankaj Pathak, and R. M. Mehra. "Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 37, no. 1 (January 2, 2018): 386–400. http://dx.doi.org/10.1108/compel-02-2017-0074.
Full textYu, Le, Yingkui Zheng, Sheng Zhang, Lei Pang, Ke Wei, and Xiaohua Ma. "Small-signal model parameter extraction for AlGaN/GaN HEMT." Journal of Semiconductors 37, no. 3 (March 2016): 034003. http://dx.doi.org/10.1088/1674-4926/37/3/034003.
Full textBousnina, S., P. Mandeville, A. B. Kouki, R. Surridge, and F. M. Ghannouchi. "Direct parameter-extraction method for HBT small-signal model." IEEE Transactions on Microwave Theory and Techniques 50, no. 2 (2002): 529–36. http://dx.doi.org/10.1109/22.982232.
Full textFusco, V. F. "Symbolic transfer functions for MESFET small-signal parameter extraction." IEE Proceedings G Circuits, Devices and Systems 138, no. 2 (1991): 217. http://dx.doi.org/10.1049/ip-g-2.1991.0040.
Full textXu, Zhixia, and Jianjun Gao. "Semi-analytical small signal parameter extraction method for PIN photodiode." IET Optoelectronics 11, no. 3 (June 1, 2017): 103–7. http://dx.doi.org/10.1049/iet-opt.2016.0051.
Full textJing Huang, K. A. Corzine, and M. Belkhayat. "Online Synchronous Machine Parameter Extraction From Small-Signal Injection Techniques." IEEE Transactions on Energy Conversion 24, no. 1 (March 2009): 43–51. http://dx.doi.org/10.1109/tec.2008.2008953.
Full textSabat, Samrat L., Siba K. Udgata, and K. P. N. Murthy. "Small signal parameter extraction of MESFET using quantum particle swarm optimization." Microelectronics Reliability 50, no. 2 (February 2010): 199–206. http://dx.doi.org/10.1016/j.microrel.2009.10.005.
Full textLi, B., and S. Prasad. "Basic expressions and approximations in small-signal parameter extraction for HBT's." IEEE Transactions on Microwave Theory and Techniques 47, no. 5 (May 1999): 534–39. http://dx.doi.org/10.1109/22.763151.
Full textDissertations / Theses on the topic "Small-Signal Parameter Extraction"
Kong, Frederick. "Silicon-on-sapphire MOSFET parameter extraction by small-signal measurement /." [St. Lucia, Qld.], 2002. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe17051.pdf.
Full textAlsabbagh, Mohamad. "Parasitics and Current-Dispersion Modeling of AlGaN/GaN HEMTs Fabricated on Different Substrates Using the Equivalent-Circuit Modeling Technique." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/40706.
Full textMalan, Pieter Jacob De Villiers. "Low impedance characterisation and modeling of high power LDMOS devices." Thesis, Stellenbosch : University of Stellenbosch, 2005. http://hdl.handle.net/10019.1/2510.
Full textIn RF power transistor characterisation, the designer is confronted with low impedance measurements (typically from 1 Ohm to 12 Ohm). These transistors are contained in metal-ceramic packages of which the lead widths vary with power capability. This thesis presents a high-quality fixture design with low impedance TRL calibration standards for characterisation of an LDMOS transistor. Pre-matching networks are used to transform to the low impedance environment. Since these pre-matching networks are independent of the termination impedance, the low impedance port can always be designed to comply with the same dimension as the device which is being measured.
Chen, Kuan-Hsu, and 陳冠旭. "RF MOSFET Small Signal Equivalent Circuit Model Parameter Extraction for Various Biases and Geometries." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/52970935108922010651.
Full text國立交通大學
電子工程系所
97
Small signal equivalent circuit models and the corresponding parameter extraction methods have been developed in this thesis for RF CMOS circuit simulation. Both two-port 3-terminal (3T) and four-port 4-terminal (4T) RF MOSFETs are covered in this work. The former one – 3T MOSFETs with a common source topology is a conventional one widely used in RF circuits, and the test-key layout is arranged in a two-port configuration with a common ground for source and body tied together to fit the two-port RF measurement system. In fact, source and body terminals are not always connected together in the practice of RF circuit design, the traditional two-port test-key cannot capture a whole spectrum of 4T MOSFET’s features and cannot adequately represent 4T MOSFET’s characteristics over high frequencies. To solve this critical problem, the latter one – four-port 4T RF MOSFETs are designed and fabricated in 0.13um RF CMOS process for high frequency characterization and model development in this work. In this thesis, the basic principles of two-port and multi-port scattering parameters (S-parameters) will be reviewed in the first place. Then, the small signal equivalent circuits and parameter extraction methods developed for two-port 3T device under various biases and geometries will be discussed in detail. Based on what have been done for two-port 3T MOSFET, a modified equivalent circuit relevant to four-port 4T test structures, and the corresponding fundamental works, such as de-embedding method and parameter extraction flow have been carried out. Finally, an extensive verification has been performed on the proposed small signal equivalent circuit models through simulation under various biases. The model accuracy is certified over a broad frequency up to 40GHz and various bias conditions – linear and saturation. More importantly, the model parameters of the developed equivalent circuit models manifest themselves a promisingly good scalability over various geometries in MOSFETs, such as gate lengths and gate finger numbers under a specified finger width. The accuracy over frequencies and biases and scalability over device geometries is useful to improve accuracy of high frequency circuit simulation and facilitate RF CMOS integrated circuit development.
Chen, Chun-chung, and 陳俊中. "Extracting MOSFET Small Signal Equivalent Circuit and Substrate Parameters with Four Port De-embedding Method." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/4322rd.
Full text國立中山大學
電機工程學系研究所
97
Characteristics of small signal components for circuit designers are very important in circuit design. Many researchers have been working hard on removing the unwanted parasitic effects which is used to get the intrinsic characteristics of the small signal parameters. In this thesis, we propose a novel four-port de-embedding procedure which based on two-port cascade structure de-embedding procedure and combined with metal and polysilicon ground-shielded technology, and let four terminals of MOSFET are connected individually to four signal pads. With such de-embedding procedure, the intrinsic and substrate element values of small-signal model are extracted by different bias.
Book chapters on the topic "Small-Signal Parameter Extraction"
Sharma, Swati, and Vinod Kumar. "An Accurate and Improved GaN HEMT Small Signal Parameter Extraction." In Internet of Things and Big Data Applications, 253–62. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39119-5_21.
Full text"Small-Signal Modeling and Parameter Extraction of HBT." In Heterojunction Bipolar Transistors for Circuit Design, 117–68. Singapore: John Wiley & Sons Singapore Pte. Ltd, 2015. http://dx.doi.org/10.1002/9781118921531.ch5.
Full textChetibi-Riah, Mouna, Mohamed Masmoudi, Hichame Maanane, Jrme Marcon, Karine Mourgues, Mohamed Ketata, and Philippe Eudeline. "Accurate LDMOS Model Extraction Using DC, CV and Small Signal S Parameters Measurements for Reliability Issues." In Micro Electronic and Mechanical Systems. InTech, 2009. http://dx.doi.org/10.5772/7015.
Full textConference papers on the topic "Small-Signal Parameter Extraction"
Goyal, Umakant, and Meena Mishra. "Improved parameter extraction technique for GAN HEMT's small signal model." In 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE). IEEE, 2014. http://dx.doi.org/10.1109/icemelec.2014.7151144.
Full textSabat, Samrat L., Vijay Raju, and Layak Ali. "MESFET small signal model parameter extraction using particle swarm optimization." In 2008 International Conference on Microelectronics - ICM. IEEE, 2008. http://dx.doi.org/10.1109/icm.2008.5393521.
Full textSabat, S. L., and S. K. Udgata. "Differential Evolution Algorithm for MESFET Small Signal Model Parameter Extraction." In 2010 International Symposium on Electronic System Design (ISED 2010). IEEE, 2010. http://dx.doi.org/10.1109/ised.2010.46.
Full textZorio, C. F., M. Bodea, and I. Rusu. "Small signal linear circuit parameter extraction method using symbolic computation." In 2008 11th International Conference on Optimization of Electrical and Electronic Equipment (OPTIM). IEEE, 2008. http://dx.doi.org/10.1109/optim.2008.4602492.
Full textLee, Seonghearn, Cheon Soo Kim, and Hyun Kyu Yu. "Accurate Small-Signal Modeling and Parameter Extraction for RF MOSFETs." In 2000 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2000. http://dx.doi.org/10.7567/ssdm.2000.e-6-6.
Full textXu, Ziyan, Guofu Niu, Lan Luo, Partha S. Chakraborty, Peng Cheng, Dylan Thomas, and John D. Cressler. "Cryogenic RF Small-Signal Modeling and Parameter Extraction of SiGe HBTs." In 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). IEEE, 2009. http://dx.doi.org/10.1109/smic.2009.4770509.
Full textJing Huang. "On-line synchronous machine parameter extraction from small signal-injection techniques." In 2009 IEEE/PES Power Systems Conference and Exposition (PSCE). IEEE, 2009. http://dx.doi.org/10.1109/psce.2009.4840249.
Full textWenna Song, Jun Fu, Yudong Wang, Wei Zhou, Wei Zhang, Jie Cui, Yue Zhao, Gaoqing Li, and Zhihong Liu. "An accurate parameter extraction method for RF LDMOSFET small-signal model." In 2015 IEEE International Wireless Symposium (IWS). IEEE, 2015. http://dx.doi.org/10.1109/ieee-iws.2015.7164534.
Full textSeonghearn Lee and Hyun Kyu Yu. "Parameter extraction technique for the small-signal equivalent circuit model of microwave silicon MOSFETs." In Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. IEEE, 1997. http://dx.doi.org/10.1109/cornel.1997.649357.
Full textZhang, Linghan, Yunzhou Wang, Yicong Liu, and Xusheng Tang. "A new intrinsic parameter extraction approach for small-signal model of AlGaN/GaN devices." In 2015 IEEE 11th International Conference on ASIC (ASICON ). IEEE, 2015. http://dx.doi.org/10.1109/asicon.2015.7517150.
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