Relevant bibliographies by topics / SOA integrated optics Quantum wells

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  2. Dissertations / Theses
  3. Books
  4. Conference papers

Academic literature on the topic 'SOA integrated optics Quantum wells'

Author: Grafiati
Published: 7 July 2024
Last updated: 31 July 2025

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Journal articles on the topic "SOA integrated optics Quantum wells"

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Ramírez, Joan Manel, Pierre Fanneau de la Horie, Jean-Guy Provost, et al. "Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers." Applied Sciences 11, no. 23 (2021): 11096. http://dx.doi.org/10.3390/app112311096.

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Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint
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Li Kam Wa, P. "Intermixing of multiple quantum wells for all-optical integrated circuits." Optical and Quantum Electronics 23, no. 7 (1991): S925—S939. http://dx.doi.org/10.1007/bf00624982.

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Kowsz, Stacy J., Erin C. Young, Benjamin P. Yonkee, et al. "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells." Optics Express 25, no. 4 (2017): 3841. http://dx.doi.org/10.1364/oe.25.003841.

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Lu, Jen-Hsiang, Kun-Jheng Wu, Kuang-Jou Hsieh, et al. "A Superlattice Infrared Photodetector Integrated With Multiple Quantum Wells to Improve the Performance." IEEE Journal of Quantum Electronics 43, no. 1 (2007): 72–77. http://dx.doi.org/10.1109/jqe.2006.884584.

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Feng, Jijun, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama, and Hiroshi Ishikawa. "Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch." Optics Express 21, no. 13 (2013): 15840. http://dx.doi.org/10.1364/oe.21.015840.

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Новиков, И. И., И. А. Няпшаев, А. Г. Гладышев та ін. "Влияние состава волноводного слоя на излучательные параметры лазерных гетероструктур InGaAlAs/InP спектрального диапазона 1550 нм". Физика и техника полупроводников 56, № 9 (2022): 933. http://dx.doi.org/10.21883/ftp.2022.09.53418.9892.

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The influence of InGaAlAs waveguide layer composition on the photoluminescence and electroluminescence in the 1550-nm spectral range of heterostructures based on thin strained In0.74Ga0.26As quantum wells has been studied. An approach is proposed that allows based on the analysis of electroluminescence.to carry out a comparative analysis of the deferential gain in fabricated laser diodes. It is shown that decrease of the molar fraction of aluminum in waveguide InGaAlAs layers matched in lattice constant with indium phosphide leads to falling of integrated photoluminescence intensity, however,
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Хабибуллин, Р. А., К. В. Маремьянин, Д. С. Пономарев та ін. "Квантово-каскадный лазер на 3.3 ТГц на основе активного модуля из трех квантовых ям GaAs/AlGaAs с рабочей температурой >120 K". Физика и техника полупроводников 55, № 11 (2021): 989. http://dx.doi.org/10.21883/ftp.2021.11.51551.46.

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In this work, we have optimized the THz QCL design with an active module based on three GaAs/Al0.18Ga0.82As quantum wells for high-temperature generation at a frequency of about 3.3 THz. A heterostructure based on the developed design with an active region thickness of 10 μm was grown by molecular beam epitaxy with a deviation of the active module thickness from the nominal less than 1%. The fabricated THz QCLs with a double metal waveguide demonstrate lasing up to a temperature of 125 K. Investigations of the I–V characteristics, the dependences of the integrated radiation on the current and
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Zhang, Yi, Jianfeng Gao, Senbiao Qin, et al. "Asymmetric Ge/SiGe coupled quantum well modulators." Nanophotonics 10, no. 6 (2021): 1765–73. http://dx.doi.org/10.1515/nanoph-2021-0007.

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Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of
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Shen, Jinyong, Tianyun Zhu, Jing Zhou, et al. "High-Discrimination Circular Polarization Detection Based on Dielectric-Metal-Hybrid Chiral Metamirror Integrated Quantum Well Infrared Photodetectors." Sensors 23, no. 1 (2022): 168. http://dx.doi.org/10.3390/s23010168.

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Circular polarization detection enables a wide range of applications. With the miniaturization of optoelectronic systems, integrated circular polarization detectors with native sensitivity to the spin state of light have become highly sought after. The key issues with this type of device are its low circular polarization extinction ratios (CPERs) and reduced responsivities. Metallic two-dimensional chiral metamaterials have been integrated with detection materials for filterless circular polarization detection. However, the CPERs of such devices are typically below five, and the light absorpti
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Tossoun, Bassem, Jizhao Zang, Sadhvikas J. Addamane, Ganesh Balakrishnan, Archie L. Holmes Holmes, and Andreas Beling. "InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 $ \mathbf {\mu }$m Wavelength." Journal of Lightwave Technology 36, no. 20 (2018): 4981–87. http://dx.doi.org/10.1109/jlt.2018.2867808.

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Dissertations / Theses on the topic "SOA integrated optics Quantum wells"

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Yu, Shuqi. "Semiconductor optical amplifiers for future telecom system." Electronic Thesis or Diss., Institut polytechnique de Paris, 2024. http://www.theses.fr/2024IPPAS006.

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L'augmentation continue de la demande de transmission de données contraint les réseaux optiques à évoluer et à améliorer leur capacité de transmission. Comme l'efficacité spectrale des fibres optiques semble avoir atteint sa limite, l'une des meilleures solutions consiste à étendre la largeur de bande spectrale des systèmes optiques. Compte tenu de la demande de systèmes d'amplification optique à large bande passante, nous avons décidé de mener des recherches sur les amplificateurs optiques à semiconducteurs (SOA) car ils offrent un gain personnalisé et une expansion flexible de la bande passa
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May-Arrioja, Daniel. "INTEGRATED INP PHOTONIC SWITCHES." Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3288.

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Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this disser
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Chaisakul, Papichaya. "Ge/SiGe quantum well devices for light modulation, detection, and emission." Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00764154.

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This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive D
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Liu, Danyu. "GaAs-based quantum well and quantum dot compact microlasers." Phd thesis, 2012. http://hdl.handle.net/1885/150426.

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The capability to confine and manipulate photons at micro and nano scale opens enormous opportunities to integrate optoelectronic devices, and develop quantum information processing technologies. The most critical issue is to develop new device concepts and technologies that will reliably confine light in a small region via basic physical mechanisms such as photonic bandgap effect, total internal reflection (TIR) and plasmonic propagation. The contents in this thesis are presented along these directions. First of all, a large triangular or square resonator based on TIR can resonate at many
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Books on the topic "SOA integrated optics Quantum wells"

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R, Adams Alfred, Europtica-Services I. C, and Society of Photo-optical Instrumentation Engineers., eds. Quantum wells and superlattices in optoelectronic devices and integrated optics: 17-18 November 1987, Cannes, France. SPIE--the International Society for Optical Engineering, 1987.

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Adams, Alfred R. Quantum Wells Superlattices in Optoelectronic Devices and Integrated Optics (Proceedings / SPIE). Society of Photo Optical, 1988.

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Conference papers on the topic "SOA integrated optics Quantum wells"

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Kost, Alan R., Nayer Eradat, Xiaolan Sun, Espen Selvig, Bjorn-Ove Fimland, and David H. Chow. "GaAsSb quantum wells for optoelectronics and integrated optics." In Frontiers in Optics. OSA, 2003. http://dx.doi.org/10.1364/fio.2003.thm4.

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Choy, Wallace C. H., Jian Jun He, Ming Li, Yan Feng, and Emil S. Koteles. "InGaAs/InGaAsP diffused quantum wells optical amplifiers and modulators." In Symposium on Integrated Optics, edited by Giancarlo C. Righini and Seppo Honkanen. SPIE, 2001. http://dx.doi.org/10.1117/12.426830.

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Miller, D. A. B. "Physics and Applications of Quantum Wells in Optics." In Integrated and Guided Wave Optics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/igwo.1989.waa1.

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Quantum wells are made from alternating thin (e.g. 100 Å) layers of two different semiconductors. These dimensions are so small that physical mechanisms can be engineered on a quantum-mechanical level, either to improve existing physical effects or to create new ones. The topic of the physics of layered semiconductor structures is one of intense current research interest in solid state physics. In optics, we see the consequences in linear and nonlinear optical properties and in electrooptical effects. (For recent reviews, see e.g. Refs. 1-5). Many of these effects are seen under rather practic
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Qu, Fanyao, N. O. Dantas, and P. C. Morais. "Anomalous shift of the recombination energy in single asymmetric quantum wells." In Symposium on Integrated Optics, edited by Yasuhiko Arakawa, Peter Blood, and Marek Osinski. SPIE, 2001. http://dx.doi.org/10.1117/12.432619.

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Pogossian, Souren P., Adrian P. Vonsovici, and Lili Vescan. "(SiGe/Si) n /Si quantum wells for enhanced spontaneous emission LEDs." In Symposium on Integrated Optics, edited by David J. Robbins, John A. Trezza, and Ghassan E. Jabbour. SPIE, 2001. http://dx.doi.org/10.1117/12.426923.

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Miyamoto, Tomoyuki, T. Kageyama, S. Makino, Yoshihiko Ikenaga, Fumio Koyama, and Kenichi Iga. "CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers." In Symposium on Integrated Optics, edited by Yasuhiko Arakawa, Peter Blood, and Marek Osinski. SPIE, 2001. http://dx.doi.org/10.1117/12.432570.

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Wu, Bing-Ruey, Ching-Fuh Lin, Lih-Wen Laih, and Tien-Tsorng Shih. "Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells." In Symposium on Integrated Optics, edited by Suning Tang and Yao Li. SPIE, 2001. http://dx.doi.org/10.1117/12.428027.

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Wen, Tzu-Chi, Shih-Chang Lee, and Wei-I. Lee. "Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells." In Symposium on Integrated Optics, edited by H. Walter Yao and E. F. Schubert. SPIE, 2001. http://dx.doi.org/10.1117/12.426844.

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Sun, Handong, Takayuki Makino, Tien T. Nguyen, et al. "Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques." In Symposium on Integrated Optics, edited by Ghassan E. Jabbour and Hideomi Koinuma. SPIE, 2001. http://dx.doi.org/10.1117/12.424747.

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Koren, U., G. Eisenstein, R. S. Tucker, T. L. Koch, and B. I. Miller. "Integrated Multiple Quantum Well Lasers and Optical Amplifiers at 1.55 Micron Wavelength." In Quantum Wells for Optics and Opto-Electronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tuc2.

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Photonic integrated circuits (PIC's) can be composed of many active waveguide elements such as lasers, detectors, optical modulators and switches, optical amplifiers etc. These elements can be optically coupled via a complex branching network of low loss passive waveguides all on the same semiconductor chip. Some of the more obvious advantages of this technology are the compact, stable and efficient couplings that can be obtained between the various optical elements of the PIC, and also the potential extensive use of optical amplifiers inside the PIC to compensate for undesirable optical losse
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