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Journal articles on the topic 'SOA integrated optics Quantum wells'

Author: Grafiati

Published: 7 July 2024

Last updated: 31 July 2025

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1

Ramírez, Joan Manel, Pierre Fanneau de la Horie, Jean-Guy Provost, et al. "Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers." Applied Sciences 11, no. 23 (2021): 11096. http://dx.doi.org/10.3390/app112311096.

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Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint

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2

Li Kam Wa, P. "Intermixing of multiple quantum wells for all-optical integrated circuits." Optical and Quantum Electronics 23, no. 7 (1991): S925—S939. http://dx.doi.org/10.1007/bf00624982.

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3

Kowsz, Stacy J., Erin C. Young, Benjamin P. Yonkee, et al. "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells." Optics Express 25, no. 4 (2017): 3841. http://dx.doi.org/10.1364/oe.25.003841.

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4

Lu, Jen-Hsiang, Kun-Jheng Wu, Kuang-Jou Hsieh, et al. "A Superlattice Infrared Photodetector Integrated With Multiple Quantum Wells to Improve the Performance." IEEE Journal of Quantum Electronics 43, no. 1 (2007): 72–77. http://dx.doi.org/10.1109/jqe.2006.884584.

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5

Feng, Jijun, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama, and Hiroshi Ishikawa. "Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch." Optics Express 21, no. 13 (2013): 15840. http://dx.doi.org/10.1364/oe.21.015840.

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6

Новиков, И. И., И. А. Няпшаев, А. Г. Гладышев та ін. "Влияние состава волноводного слоя на излучательные параметры лазерных гетероструктур InGaAlAs/InP спектрального диапазона 1550 нм". Физика и техника полупроводников 56, № 9 (2022): 933. http://dx.doi.org/10.21883/ftp.2022.09.53418.9892.

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The influence of InGaAlAs waveguide layer composition on the photoluminescence and electroluminescence in the 1550-nm spectral range of heterostructures based on thin strained In0.74Ga0.26As quantum wells has been studied. An approach is proposed that allows based on the analysis of electroluminescence.to carry out a comparative analysis of the deferential gain in fabricated laser diodes. It is shown that decrease of the molar fraction of aluminum in waveguide InGaAlAs layers matched in lattice constant with indium phosphide leads to falling of integrated photoluminescence intensity, however,

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Хабибуллин, Р. А., К. В. Маремьянин, Д. С. Пономарев та ін. "Квантово-каскадный лазер на 3.3 ТГц на основе активного модуля из трех квантовых ям GaAs/AlGaAs с рабочей температурой >120 K". Физика и техника полупроводников 55, № 11 (2021): 989. http://dx.doi.org/10.21883/ftp.2021.11.51551.46.

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In this work, we have optimized the THz QCL design with an active module based on three GaAs/Al0.18Ga0.82As quantum wells for high-temperature generation at a frequency of about 3.3 THz. A heterostructure based on the developed design with an active region thickness of 10 μm was grown by molecular beam epitaxy with a deviation of the active module thickness from the nominal less than 1%. The fabricated THz QCLs with a double metal waveguide demonstrate lasing up to a temperature of 125 K. Investigations of the I–V characteristics, the dependences of the integrated radiation on the current and

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8

Zhang, Yi, Jianfeng Gao, Senbiao Qin, et al. "Asymmetric Ge/SiGe coupled quantum well modulators." Nanophotonics 10, no. 6 (2021): 1765–73. http://dx.doi.org/10.1515/nanoph-2021-0007.

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Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of

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9

Shen, Jinyong, Tianyun Zhu, Jing Zhou, et al. "High-Discrimination Circular Polarization Detection Based on Dielectric-Metal-Hybrid Chiral Metamirror Integrated Quantum Well Infrared Photodetectors." Sensors 23, no. 1 (2022): 168. http://dx.doi.org/10.3390/s23010168.

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Circular polarization detection enables a wide range of applications. With the miniaturization of optoelectronic systems, integrated circular polarization detectors with native sensitivity to the spin state of light have become highly sought after. The key issues with this type of device are its low circular polarization extinction ratios (CPERs) and reduced responsivities. Metallic two-dimensional chiral metamaterials have been integrated with detection materials for filterless circular polarization detection. However, the CPERs of such devices are typically below five, and the light absorpti

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10

Tossoun, Bassem, Jizhao Zang, Sadhvikas J. Addamane, Ganesh Balakrishnan, Archie L. Holmes Holmes, and Andreas Beling. "InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 $ \mathbf {\mu }$m Wavelength." Journal of Lightwave Technology 36, no. 20 (2018): 4981–87. http://dx.doi.org/10.1109/jlt.2018.2867808.

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11

Qiao, Zhongliang, Xiang Li, Jia XuBrian Sia, et al. "Mode-locked operation characteristics of a monolithic integrated two-section InGaAs/GaAs double quantum wells laser with asymmetric waveguide." Optics & Laser Technology 147 (March 2022): 107702. http://dx.doi.org/10.1016/j.optlastec.2021.107702.

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12

Zhang, Yiyun, Dominic Lepage, Yiming Feng, Sihan Zhao, Hongsheng Chen, and Haoliang Qian. "Resonant inelastic tunneling using multiple metallic quantum wells." Nanophotonics, June 21, 2023. http://dx.doi.org/10.1515/nanoph-2023-0231.

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Abstract Tunnel nanojunctions based on inelastic electron tunneling (IET) have been heralded as a breakthrough for ultra-fast integrated light sources. However, the majority of electrons tend to tunnel through a junction elastically, resulting in weak photon-emission power and limited efficiency, which have hindered their practical applications to date. Resonant tunneling has been proposed as a way to alleviate this limitation, but photon-emissions under resonant tunneling conditions have remained unsatisfactory for practical IET-based light sources due to the inherent contradiction between hi

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13

Delphan, Anthonin, Maxim N. Makhonin, Tommi Isoniemi, et al. "Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells." APL Photonics, January 9, 2023. http://dx.doi.org/10.1063/5.0132170.

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Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multiple ring resonator modes is observed, which exhibit threshold-like dependence of the emission intensity with pulse energy. The strong exciton-photon coupling regime is confirmed by the significant reduc

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14

Chesi, Giovanni, virginia falcone, Stefano Calcaterra, Michele Virgilio, and Jacopo Frigerio. "Modelling second harmonic generation at mid-infrared frequencies in waveguide integrated Ge/SiGe quantum wells." Optics Express, March 27, 2023. http://dx.doi.org/10.1364/oe.483888.

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15

Faverzani, Marco, Stefano Calcaterra, Paolo Biagioni, and Jacopo Frigerio. "Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study." Nanophotonics, January 24, 2024. http://dx.doi.org/10.1515/nanoph-2023-0730.

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Abstract In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.

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16

Srikam, Saranisorn, Worawat Traiwattanapong, Pichet Limsuwan, and Papichaya Chaisakul. "An FDTD investigation of compact and low-voltage waveguide-integrated plasmonic Ge/SiGe multiple quantum wells photodetectors." IEEE Photonics Journal, 2022, 1–8. http://dx.doi.org/10.1109/jphot.2022.3202882.

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17

Talamas Simola, Enrico, Michele Ortolani, Luciana Di Gaspare, Giovanni Capellini, Monica De Seta, and Michele Virgilio. "Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study." Nanophotonics, January 18, 2024. http://dx.doi.org/10.1515/nanoph-2023-0697.

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Abstract We present a theoretical investigation of guided second harmonic generation at THz frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum wells to engineer a giant second order nonlinear susceptibility. A characteristic of the chosen material system is the existence of large off-diagonal elements in the χ 2 tensor, coupling optical modes with different polarization. To account for this effect, we generalize the coupled-mode theory, proposing a theoretical model suitable for concurrently resolving every second harmonic generation interaction among guide-sust

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18

Ojanen, Samu‐Pekka, Jukka Viheriälä, Nouman Zia, et al. "Widely Tunable (2.47–2.64 µm) Hybrid Laser Based on GaSb/GaInAsSb Quantum‐Wells and a Low‐Loss Si ₃ N ₄ Photonic Integrated Circuit." Laser & Photonics Reviews, April 14, 2023. http://dx.doi.org/10.1002/lpor.202201028.

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19

Kittlaus, Eric, Jonathon Hunacek, Mahmood Bagheri, et al. "Semiconductor optical amplifier-based laser system for cold-atom sensors." EPJ Quantum Technology 12, no. 1 (2025). https://doi.org/10.1140/epjqt/s40507-025-00348-z.

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Abstract Precise control of atomic systems has led to an array of emerging ‘quantum’ sensor concepts ranging from Rydberg-atom RF-electric probes to cold-atom interferometer gravimeters. Looking forward, the potential impact of these technologies hinges on their capability to be adapted from laboratory-scale experiments to compact and low-power field-deployable instruments. However, existing setups typically require a bulky and power-hungry laser and optics system (LOS) to prepare, control, and interrogate the relevant atomic system using a variety of frequency-referenced and rapidly reconfigu

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20

Qiao, Zhongliang, Xiang Li, Jia XuBrian Sia, et al. "Corrigendum to “Mode-locked Operation Characteristics of a Monolithic Integrated Two-section InGaAs/GaAs Double Quantum Wells Laser with Asymmetric Waveguide” [Optics & Laser Technol. 147 (2022) 107702, Pp. 1-8. https://doi.org/10.1016/j.optlastec.2021.107702]." Optics & Laser Technology, May 2024, 111080. http://dx.doi.org/10.1016/j.optlastec.2024.111080.

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21

sprotocols. "Engineering of ultra-small diagnostic nanoprobes through oriented conjugation of single-domain antibodies and quantum dots." January 7, 2015. https://doi.org/10.5281/zenodo.13799.

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Authors: Alyona Sukhanova, Klervi Even-Desrumeaux, Patrick Chames, Daniel Baty, Mikhail Artemyev, Vladimir Oleinikov & Igor Nabiev ### Abstract Nanoparticle-based biodetection commonly employs monoclonal antibodies (mAbs) for targeting. Although several types of conjugates have been used for biomarker labeling, the large size of mAbs limits the number of ligands per nanoparticle, impedes their intratumoral distribution, and limits intracellular penetration. Furthermore, the conditions of mAb conjugation using conventional techniques provide nanoprobes with irregular orientation of mAbs on

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