Relevant bibliographies by topics / Solid state circuit breaker

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Solid state circuit breaker'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Solid state circuit breaker"

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Kim, Jin-Young, In-Dong Kim, and Eui-Cheol Nho. "A Novel DC Solid-State Circuit Breaker for DC Grid." Transactions of the Korean Institute of Power Electronics 17, no. 4 (August 20, 2012): 368–76. http://dx.doi.org/10.6113/tkpe.2012.17.4.368.

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Song, Seung-Min, Jin-Young Kim, Seung-Soo Choi, In-Dong Kim, and Sun-Kyu Choi. "New Simple-Structured AC Solid-State Circuit Breaker." IEEE Transactions on Industrial Electronics 65, no. 11 (November 2018): 8455–63. http://dx.doi.org/10.1109/tie.2018.2809674.

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Ludin, Gul Ahmad, Mohammad Amin Amin, Hidehito Matayoshi, Shriram S. Rangarajan, Ashraf M. Hemeida, Hiroshi Takahashi, and Tomonobu Senjyu. "Solid-State DC Circuit Breakers and Their Comparison in Modular Multilevel Converter Based-HVDC Transmission System." Electronics 10, no. 10 (May 18, 2021): 1204. http://dx.doi.org/10.3390/electronics10101204.

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This paper proposes a new and surge-less solid-state direct current (DC) circuit breaker in a high-voltage direct current (HVDC) transmission system to clear the short-circuit fault. The main purpose is the fast interruption and surge-voltage and over-current suppression capability analysis of the breaker during the fault. The breaker is equipped with series insulated-gate bipolar transistor (IGBT) switches to mitigate the stress of high voltage on the switches. Instead of conventional metal oxide varistor (MOV), the resistance–capacitance freewheeling diodes branch is used to bypass the high fault current and repress the over-voltage across the circuit breaker. The topology and different operation modes of the proposed breaker are discussed. In addition, to verify the effectiveness of the proposed circuit breaker, it is compared with two other types of surge-less solid-state DC circuit breakers in terms of surge-voltage and over-current suppression. For this purpose, MATLAB Simulink simulation software is used. The system is designed for the transmission of 20 MW power over a 120 km distance where the voltage of the transmission line is 220 kV. The results show that the fault current is interrupted in a very short time and the surge-voltage and over-current across the proposed breaker are considerably reduced compared to other topologies.
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Li, Hui, Renze Yu, Yi Zhong, Ran Yao, Xinglin Liao, and Xianping Chen. "Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET." Micromachines 10, no. 5 (May 10, 2019): 314. http://dx.doi.org/10.3390/mi10050314.

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection circuit, energy absorption circuit, and snubber circuit of the SSCB were designed and analyzed. Lastly, a prototype of the DC SSCB with SiC MOSFET was developed, tested, and compared with the SSCB with Silicon (Si) insulated gate bipolar transistor (IGBT). Experimental results show that the designed circuits of SSCB with SiC MOSFET are valid. Also, the developed miniature DC SSCB with the SiC MOSFET exhibits faster reaction to the fault and can reduce short circuit time and fault current in contrast with the SSCB with Si IGBT. Hence, the proposed SSCB can better meet the requirements of DC microgrid protection.
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Meyer, C., and R. W. De Doncker. "Solid-state circuit breaker based on active thyristor topologies." IEEE Transactions on Power Electronics 21, no. 2 (March 2006): 450–58. http://dx.doi.org/10.1109/tpel.2005.869756.

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Goh, Hui Hwang, Sy yi Sim, Nur Iskandar Bin Hamzah, Sulaiman bin Mazlan, Chin Wan Ling, Qing Shi Chua, and Kai Chen Goh. "Types of Circuit Breaker and its Application in Substation Protection." Indonesian Journal of Electrical Engineering and Computer Science 8, no. 1 (October 1, 2017): 213. http://dx.doi.org/10.11591/ijeecs.v8.i1.pp213-220.

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Power system consists of the generation, transmission, distribution, and substation. All the power system component requires suitable protection devices as the protection system to protect the system during fault occur. In this paper, the circuit breaker has been selected as one of the protection devices in several applications. The types of circuit breaker that has been reviewed in this paper are oil circuit breaker (OCB), air circuit breaker (ACB), sulphur hexafluoride (SF6) circuit breaker, vacuum circuit breaker, and DC breaker which are hybrid DC breaker and solid-state DC breaker. Normally, the systems or the circuits disrupted or damaged by the fault. To implement the protection system in the system or circuit, the type of faults and cause of faults should be known to overcome the fault. To provide the suitable voltage for the consumer, the substation is needed to control the voltage transmitted at high voltage from the generating station. Protection system is also required in a substation.
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Huerner, Andreas, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications." Materials Science Forum 897 (May 2017): 661–64. http://dx.doi.org/10.4028/www.scientific.net/msf.897.661.

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In this study, the basic device features of a novel monolithically integrated solid-state-circuit-breaker (MI-SSCB) are demonstrated and analyzed using numerical simulations. Thereby, the MI-SSCB is built according to the concept of the dual thyristor. But, in comparison to similar technical solutions reported in literature, due to the advanced device structure proposed in this study a monolithically integration could be achieved for the first time.
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Rubino, Luigi, Guido Rubino, Pompeo Marino, and Luigi Pio Di Noia. "Smart Solid State Circuit Breaker for Photo Voltaic Power Plants." International Review of Electrical Engineering (IREE) 12, no. 5 (October 31, 2017): 409. http://dx.doi.org/10.15866/iree.v12i5.13982.

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Wang, Yufeng, Weilin Li, Xuanlyu Wu, and Xiaohua Wu. "A Novel Bidirectional Solid-State Circuit Breaker for DC Microgrid." IEEE Transactions on Industrial Electronics 66, no. 7 (July 2019): 5707–14. http://dx.doi.org/10.1109/tie.2018.2878191.

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Sagara, Mitsuhiko, Keiji Wada, and Shin-Ichi Nishizawa. "Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit Breaker." Materials Science Forum 1004 (July 2020): 1010–15. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1010.

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This paper investigates a degradation of SiC power device for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. Being much lower compared with Si devices, it has been considered an application for DC circuit breakers using SiC semiconductor. In order to use for the DCbreaker, it is essential to evaluate the destructive endurance for UIS test.This paper evaluates a deterioration phenomenon by paying attention to the decrease of the gate voltage of the SiC-MOSFETs under the degradation at repetitive UIS test.
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Dissertations / Theses on the topic "Solid state circuit breaker"

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Zhou, Xigen. "Electrical, Magnetic, Thermal Modeling and Analysis of a 5000A Solid-State Switch Module and Its Application as a DC Circuit Breaker." Diss., Virginia Tech, 2005. http://hdl.handle.net/10919/28900.

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This dissertation presents a systematic design and demonstration of a novel solid-state DC circuit breaker. The mechanical circuit breaker is widely used in power systems to protect industrial equipment during fault or abnormal conditions. Compared with the slow and high-maintenance mechanical circuit breaker, the solid-state circuit breaker is capable of high-speed interruption of high currents without generating an arc, hence it is maintenance-free. Both the switch and the tripping unit are solid-state, which meet the requirements of precise protection and high reliability. The major challenge in developing and adopting a solid-state circuit breaker has been the lack of power semiconductor switches that have adequate current-carrying capability and interruption capability. The high-speed, high-current solid-state DC circuit breaker proposed and demonstrated here uses a newly-emerging power semiconductor switch, the emitter turn-off (ETO) thyristor as the main interruption switch. In order to meet the requirement of being a high-current circuit breaker, ETO parallel operation is needed. Therefore the major effort of this dissertation is dedicated to the development of a high-current (5000A) DC switch module that utilizes multiple ETOs in parallel. This work can also be used to develop an AC switch module by changing the asymmetrical ETOs used to symmetrical ETOs. An accurate device model of the ETO is needed for the development of the high-current DC switch module. In this dissertation a novel physics-base lumped charge model is developed for the ETO thyristor for the first time. This model is verified experimentally and used for the research and development of the emitter turn-off (ETO) thyristor as well as the DC switch module discussed in this dissertation. With the aid of the developed device model, the device current sharing between paralleled multiple ETO thyristors is investigated. Current sharing is difficult to achieve for a thyristor-type device due to the large device parameter variations and strong positive feedback mechanism in a latched thyristor. The author proposes the "DirectETO" concept that directly benefits from the high-speed capability of the ETO and strong thermal couplings among ETOs. A high-current DC switch module based on the DirectETO can be realized by directly connecting ETOs in parallel without the bulky current sharing inductors used in other current-sharing solutions. In order to achieve voltage stress suppression under high current conditions, the parasitic parameters, especially parasitic inductance in a high-current ETO switch module are studied. The Partial Element Equivalent Circuit (PEEC) method is used to extract the parasitics. Combined with the developed device model, the electrical interactions among multiple ETOs are investigated which results in structural modification for the solid-state DC switch module. The electro-thermal model of the DC switch module and the heatsink subsystem is used to identify the "thermal runaway" phenomenon in the module that is caused by the negative temperature coefficient of the ETO's conduction drop. The comparative study of the electro-thermal coupling identifies a strongly-coupled thermal network that increases the stability of the thermal subsystem. The electro-thermal model is also used to calculate the DC and transient thermal limit of the DC switch module. The high-current (5000A) DC switch module coupled with a solid state tripping unit is successfully applied as a high-speed, high-current solid-state DC circuit breaker. The experimental demonstration of a 5000A current interruption shows an interruption time of about 5 microseconds. This high-speed, high-current DC switch module can therefore be used in DC circuit breaker applications as well as other types of application, such as AC circuit breakers, transfer switches and fault current limiters. Since the novel solid-state DC circuit breaker is able to extinguish the fault current even before it reaches an uncontrollable level, this feature provides a fast-acting, current-limiting protection scheme for power systems that is not possible with traditional circuit breakers. The potential impact on the power system is also discussed in this dissertation.
Ph. D.
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Bukur, Calin Matthew. "Design, Simulation, and Hardware Construction of a 600 W Solid State DC Circuit Breaker for the DC House Project." DigitalCommons@CalPoly, 2018. https://digitalcommons.calpoly.edu/theses/1878.

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DC circuit breakers must be able to arrest overcurrent conditions to prevent electrical equipment and wiring from causing building fires or other hazards from occurring. With more DC renewable sourced structures such as Cal Poly’s DC House, an inexpensive and reliable protection system is necessary to ensure safe energy transfer to the loads. One method of protecting a system is preventing excessive amounts of current to be drawn by the load when the surrounding components are rated at a lesser value. DC circuit breakers act as a monitoring system and barely presents an effect on the voltage or power. With most DC circuit breakers on the market being mechanical, the response time to an overload condition is limited to the speed the contacts can disconnect. The examination of response timing and overcurrent limiting is explored in this thesis when using a solid state based DC circuit breaker. The system is designed to handle 600 W, where the operating voltage is 48 V and the maximum allowable current is 12.5 A. The solid state DC circuit breaker has the capability of arresting excessive currents within 30 µs and can be reset through a single pole single throw switch.
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Roder, Raphaël. "Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0287/document.

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Cette thèse présente l'étude et la réalisation d'un disjoncteur statique tout silicium et intelligent pouvant fonctionner à haute température (200°C) pour des applications de type DC basse et moyenne tensions. Plusieurs applications dans l’aéronautique, l’automobile et les transports ferroviaires poussent les composants à semi-conducteur de puissance à être utilisés à haute température. Cependant, les Si-IGBT et Si-CoolMOSTM actuellement commercialisés ont une température de jonction spécifiée et estimée à 150°C et quelque fois à 175°C. L’une des faiblesses des convertisseurs provient de la réduction du rendement avec l’augmentation de la température de jonction des composants à semiconducteur de puissance qui peut amener à leur destruction. La solution serait d’utiliser des composants grand-gap (SiC, GaN), qui autorisent un fonctionnement à une température de jonction plus élevée ;mais ces technologies en plein essor ont un coût relativement élevé. Une solution alternative serait de faire fonctionner des composants en silicium à une température de jonction voisine de 200°C afin de conserver l’un des principaux intérêts du silicium en termes de coût. Avant de commencer, le premier chapitre portera sur un état de l’art des différentes techniques de protection aussi bien mécanique que statique afin d’identifier les éléments essentiels pour la réalisation du circuit de protection. Les disjoncteurs hybrides seront aussi abordés afin de voir comment ceux-ci arrivent à combler les lacunes des disjoncteurs mécaniques et purement électroniques (statiques). A partir du chapitre précédent, un disjoncteur statique intelligent de faible puissance sera réalisé afin de mieux cerner les différentes difficultés qui sont liées à ce type de disjoncteur. Le disjoncteur statique sera réalisé à partir de fonction analogique de telle façon à ce qui soit autonome et bas cout. Il en ressort que les inductances parasites ainsi que la température des composants à base de semi-conducteurs ont un impact significatif lors de la coupure.Le chapitre III portera sur une analyse non exhaustive, vis-à-vis de la température, de différents types d’interrupteurs contrôlés à base de semi-conducteur de puissance en s’appuyant sur plusieurs caractérisations électriques (test de conduction, tension de seuil, etc) afin de sélectionner le type d’interrupteur de puissance qui sera utilisé pour le chapitre IV. Comme il sera démontré, les composants silicium à super jonction peuvent se rapprocher du comportement des composants à base de carbure de silicium pour les basses puissances. Un disjoncteur statique 400V/63A (courant de court-circuit prédictible de 5kA) sera étudié et 4développé afin de mettre en pratique ce qui a été précédemment acquis et pour montrer la compétitivité du silicium pour cette gamme de puissance
This thesis presents a study about a smart solid state circuit breaker which can work at 200°C forlow and medium voltage continuous applications. Some applications in aeronautics, automotive,railways, petroleum extraction push power semiconductor devices to operate at high junctiontemperature. However, current commercially available Si-IGBT and Si-CoolMOS have basically amaximum junction temperature specified and rated at 150°C and even 175°C. Indeed, the main problemin conventional DC-DC converters is the switching losses of power semiconductor devices (linked to thetemperature influence on carrier lifetime, on-state voltage, on-resistance and leakage current) whichdrastically increase with the temperature rise and may drive to the device failure. Then, the use of wideband gap semiconductor like SiC or GaN devices allows higher junction temperature operation (intheory about 500°C) and higher integration (smaller heatsink, higher switching frequency, smallconverter), but are still under development and are expensive technologies. In order to keep theadvantage of low cost silicon devices, a solution is to investigate the feasibility to operate such devicesat junction temperature up to 200°C.Before starting the first starting chapter is a stat of the art of protectives circuit technics as well asmechanics as statics in order to identify essentials elements to develop the protective circuit. Hybridprotective circuits are approached too.From the precedent chapter, a smart and low power solid state circuit breaker is realized to identifyproblems which are linked with this type of circuit breaker. Solid state circuit breaker is developed withanalog components in a way that is autonomous and low cost. It’s follow that stray inductance andtemperature have an important impact when a default occurs.Chapter III give an analyze on different silicon power semiconductor dice towards temperature5relying on statics and dynamics characteristics in order to find the best silicon power switch which beused in the chapter IV. It has been shown that super junction MOSFET has the same behavior at lowpower than silicon carbide MOSFET.Solid state circuit breaker (400V/63A) has been studied and developed, in order to use all theknowledge previously acquired and to show the competitively of the silicon for this power range
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Bassirat, F. "Nonlinear modelling of microwave solid-state devices for computer-aided analysis and design." Thesis, University of Kent, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383125.

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So, Biu 1959. "THE METHODOLOGY AND IMPLEMENTATION OF RELAXATION METHOD TO INVESTIGATE ELECTRO-THERMAL INTERACTIONS IN SOLID-STATE INTEGRATED CIRCUITS." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276384.

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Oliver, John Marcus. "3D Micromachined Passive Components and Active Circuit Integration for Millimeter-wave Radar Applications." Diss., Virginia Tech, 2012. http://hdl.handle.net/10919/77049.

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The development of millimeter-wave (30-300 GHz) sensors and communications systems has a long history of interest, spanning back almost six decades. In particular, mm-wave radars have applications as automotive radars, in remote atmospheric sensing applications, as landing radars for air and spacecraft, and for high precision imaging applications. Mm-wave radar systems have high angular accuracy and range resolution, and, while susceptible to atmospheric attenuation, are less susceptible to optically opaque conditions, such as smoke or dust. This dissertation document will present the initial steps towards a new approach to the creation of a mm-wave radar system at 94 GHz. Specifically, this dissertation presents the design, fabrication and testing of various components of a highly integrated mm-wave a 94 Ghz monopulse radar transmitter/receiver. Several architectural approaches are considered, including passive and active implementations of RF monopulse comparator networks. These architectures are enabled by a high-performance three-dimensional rectangular coaxial microwave transmission line technology known as PolyStrataTM as well as silicon-based IC technologies. A number of specific components are examined in detail, including: a 2x2 PolyStrata antenna array, a passive monopulse comparator network, a 94 GHz SiGe two-port active comparator MMIC, a 24 GHz RF-CMOS 4-port active monopulse comparator IC, and a series of V- and W-band corporate combining structures for use in transmitter power combining applications. The 94 GHz cavity-backed antennas based on a rectangular coaxial feeding network have been designed, fabricated, and tested. 13 dB gain for a 2 x 2 array, as well as antenna patterns are reported. In an effort to facilitate high-accuracy measurement of the antenna array, an E-probe transition to waveguide and PolyStrata diode detectors were also designed and fabricated. AW-band rectangular coaxial passive monopulse comparator with integrated antenna array and diode detectors have also been presented. Measured monopulse nulls of 31.4 dB in the ΔAZ plane have been demonstrated. 94-GHz SiGe active monopulse comparator IC and 24 GHz RF-CMOS active monopulse comparator RFIC designs are presented, including detailed simulations of monopulse nulls and performance over frequency. Simulations of the W-band SiGe active monopulse comparator IC indicate potential for wideband operation, with 30 dB monopulse nulls from 75-105 GHz. For the 24-GHz active monopulse comparator IC, simulated monopulse nulls of 71 dB and 68 dB were reported for the azimuthal and elevational sweeps. Measurements of these ICs were unsuccessful due to layout errors and incomplete accounting for parasitics. Simulated results from a series of rectangular coaxial power corporate power combining structures have been presented, and their relative merits discussed. These designs include 2-1 and 4-1 reactive, Wilkinson, and Gysel combiners at V- and W-band. Measured back-to-back results from Gysel combiners at 60 GHz included insertion loss of 0.13 dB per division for a 2-1 combination, and an insertion loss of 0.3 dB and 0.14 dB for "planar" and "direct" 4-1 combinations, respectively. At 94 GHz, a measured insertion loss of 0.1 dB per division has been presented for a 2-1 Gysel combination, using a back-to-back structure. Preliminary designs for a solid-state power amplifier (SSPA) structure have also been presented. Finally, two conceptual monopulse transceivers will be presented, as a vehicle for integrating the various components demonstrated in this dissertation.
Ph. D.
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Bártů, Jan. "Analýza mechanického namáhání při zkratu ve vzduchem izolovaném rozváděči vn." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-317035.

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This Master thesis is based on problems of force effects of the magnetic field of short-circuit current. Firstly, I analysed the force action of the three phase busbars during the three-pole short circuit. The analysis was performed in the Ansys Maxwell program and I verified the correctness of the analysis by numerical calculation. The second practical part was executed for ABB company. The main task was to analyse the force effects of the short-circuit current in the HV switchgear with focusing on the arms and contact system of the circuit breaker. The simulations of the following configurations were performed in more details: three configurations of the simplified VD4 circuit breaker, two types of VD4 circuit-breaker contact systems and a linear circuit breaker configuration model. The objective was to calculate the forces acting on the current path of the arms and contact system of the VD4 circuit breaker during the three-phase short-circuit and to simulate the effects of forces on these current parts. For modelling of individual assemblies, calculations and simulations I used: SolidWorks 2014, Ansys Maxwell 16.0 and Ansys Workbench 14.5 programs. With SolidWorks 2014 3D CAD software were modelled simplified assemblies of circuit breakers and contact systems. These systems were imported into the Ansys Maxwell software, where the force effects of the magnetic field of the short-circuit current were calculated. In Ansys Workbench programme was simulated the effect of forces on the current circuit breakers. Moreover, the final deformations of the materials (with respect to the mechanical properties of the structure) were plotted. The analysis of force effects of the magnetic field was performed for the specified static short - circuit current value.
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Specht, Teressa Rose. "Advancements Toward High Operating Temperature Small Pixel Infrared Focal Plane Arrays: Superlattice Heterostructure Engineering, Passivation, and Open-Circuit Voltage Architecture." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1595558942395669.

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Tasselli, Josiane. "Etude et realisation de structures bipolaires particulieres a heterojonction gaas-gaaias : application aux circuits integres de type ecl." Toulouse 3, 1986. http://www.theses.fr/1986TOU30019.

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Ce memoire presente l'etude et la realisation d'un circuit integre bipolaire de type ecl sur arseniure de gallium. Une etude theorique de transistors bipolaires a double heterojonction a montre l'influence determinante de la jonction collecteur-base, notamment de sa gradualite, sur leur comportement electrique. Ces resultats ont pu etre confirmes par une analyse experimentale a partir de structures realisees par epitaxie en phase liquide. La simulation et l'optimisation d'un oscillateur en anneau a base de simples heterotransistors et mettant en oeuvre le logiciel astec iii, ont permis de calculer des temps de propagation par porte de 20 ps pour une puissance consommee de 4 mw; ceci confirme les potentialites de la filiere logique bipolaire sur asga. Enfin, un oscillateur en anneau a 3 portes ecl a ete concu et realise par les technologies d'epitaxie en phase liquide et d'attaques mesas, a partir d'un processus nouveau sur substrat semi-isolant. La faisabilite d'un circuit integre bipolaire asga a ainsi ete montree
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Slowik, Irma, Axel Fischer, Stefan Gutsche, Robert Brückner, Hartmut Fröb, Simone Lenk, Sebastian Reineke, and Karl Leo. "New concept for organic lightemitting devices under high excitations using emission from a metal-free area." SPIE, 2016. https://tud.qucosa.de/id/qucosa%3A34847.

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In this work, a new organic light-emitting device (OLED) structure is proposed that allows light-emission from a metal-free device region, thus reducing the hurdles towards an electrically pumped organic solid state laser (OSL). Our design concept employs a stepwise change from a highly conductive but opaque metal part to a highly transparent but less conductive intrinsic emission layer. Here, the high current densities are localized to an area of a few micrometer in square, which is in the range of the mode volume of the transverse mode of an organic vertical-cavity surface-emitting laser (VCSEL). Besides these experimental results, we present findings from simulations which further support the feasibility of our design concept. Using an equivalent circuit approach, representing the current ow in the device, we calculate the time-dependent length of the emission zone and give estimations for appropriate material parameters.
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Books on the topic "Solid state circuit breaker"

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Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. [Washington, D.C.]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. [Washington, D.C.]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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Sturman, John C. High-voltage, high-power, solid-state remote power controllers for aerospace applications. [Washington, D.C.]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1985.

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name, No. Microwave solid state circuit design. 2nd ed. Hoboken, NJ: Wiley Interscience, 2003.

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T, Horn Delton, and Horowitz Mannie, eds. How to design solid-state circuits. 2nd ed. Blue Ridge Summit, PA: Tab Books, 1988.

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Electronic devices and circuit analysis. Albany, N.Y: Delmar Publishers, 1986.

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Putz, Stefan. Circuit Cavity QED with Macroscopic Solid-State Spin Ensembles. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-66447-7.

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J, Watson. Analog and switching circuit design: Using integrated and discrete devices. 2nd ed. New York: Wiley, 1989.

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J, Watson. Analog and switching circuit design: Using integrated and discrete devices. Bristol: Adam Hilger, 1987.

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Shi, China) International Conference on Solid-State and Integrated Circuit Technology (11th 2012 Xi'an. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012): Xian, China, 29 October-1 November 2012. Piscataway, NJ: IEEE, 2012.

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Book chapters on the topic "Solid state circuit breaker"

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Prajapati, Yogeshwari, and Mulav P. Rathod. "Realization of Solid-State DC Circuit Breaker for HVDC System." In Lecture Notes in Electrical Engineering, 25–34. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-0206-4_3.

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Weik, Martin H. "solid-state circuit." In Computer Science and Communications Dictionary, 1614. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_17683.

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Racec, P. N., and Ulrich Wulf. "Small-Signal Circuit Elements of MIS-Type Nanostructures." In Solid State Phenomena, 549–52. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.549.

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Lee, El Hang, In Joo Chin, Yong Ku Kwon, S. G. Lee, B. H. O, S. G. Park, and Kyong Hon Kim. "Synthesis and Fabrication of Novel Polymeric/Organic Materials for Micro/Nano-Scale Optical Printed Circuit Board and VLSI Photonic Integrated Circuit Application." In Solid State Phenomena, 459–62. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.459.

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Han, Seung Woo, Ki Jeong Seo, Wan Doo Kim, Hak Joo Lee, Hyun Woo Lee, Jae Ho Shin, and Jae Joon Lee. "Fatigue Behavior of Thin Cu Foils for Flexible Printed Circuit Board." In Solid State Phenomena, 1369–72. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.1369.

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Putz, Stefan. "Experimental Implementation—Solid-State Hybrid Quantum System." In Circuit Cavity QED with Macroscopic Solid-State Spin Ensembles, 51–69. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-66447-7_4.

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Putz, Stefan. "Introduction and Outline." In Circuit Cavity QED with Macroscopic Solid-State Spin Ensembles, 1–6. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-66447-7_1.

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Putz, Stefan. "Conclusion and Outlook." In Circuit Cavity QED with Macroscopic Solid-State Spin Ensembles, 119–22. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-66447-7_10.

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Putz, Stefan. "Confined Electromagnetic Waves—Cavities." In Circuit Cavity QED with Macroscopic Solid-State Spin Ensembles, 7–23. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-66447-7_2.

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Putz, Stefan. "Spins in the Cavity—Cavity QED." In Circuit Cavity QED with Macroscopic Solid-State Spin Ensembles, 25–49. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-66447-7_3.

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Conference papers on the topic "Solid state circuit breaker"

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Pang, Tiancan, Muhammad Foyazur Rahman, Ehab Shoubaki, and Madhav Manjrekar. "Diode Clamped Solid-State Circuit Breaker: A Novel Solid-State Circuit Breaker without Dynamic Voltage Unbalancing Issues." In 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2020. http://dx.doi.org/10.1109/apec39645.2020.9124547.

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Pusorn, W., W. Srisongkram, W. Subsingha, S. Deng-em, and P. N. Boonchiam. "Low Cost AC Solid State Circuit Breaker." In 2007 7th International Conference on Power Electronics and Drive Systems. IEEE, 2007. http://dx.doi.org/10.1109/peds.2007.4487941.

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Kong, Qian, Songrong Wu, Feihu Zhang, Ping Yang, Yang Zhou, and Jiaxin Wei. "DC Solid State Circuit Breaker Based On GaN." In 2020 15th IEEE Conference on Industrial Electronics and Applications (ICIEA). IEEE, 2020. http://dx.doi.org/10.1109/iciea48937.2020.9248411.

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Xie, W., F. Xiao, B. Liu, R. Zeng, W. Li, L. Qu, and Z. Song. "Research on buffer circuit suitable for solid state DC circuit breaker." In The 16th IET International Conference on AC and DC Power Transmission (ACDC 2020). Institution of Engineering and Technology, 2021. http://dx.doi.org/10.1049/icp.2020.0373.

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Supono, I., A. Castellazzi, J. Urresti, and D. Flores. "IGBT design optimisation for solid-state circuit breaker applications." In 2013 15th European Conference on Power Electronics and Applications (EPE). IEEE, 2013. http://dx.doi.org/10.1109/epe.2013.6634345.

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Zhou, Yuanfeng, Yanjun Feng, and Z. John Shen. "iBreaker: Intelligent Tri-mode Solid State Circuit Breaker Technology." In 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC). IEEE, 2018. http://dx.doi.org/10.1109/peac.2018.8590629.

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Qi, L., A. Antoniazzi, L. Raciti, B. Leoni, and H. Kim. "Solid state circuit breaker based DC shipboard distribution protection." In 13th International Conference on Development in Power System Protection 2016 (DPSP). Institution of Engineering and Technology, 2016. http://dx.doi.org/10.1049/cp.2016.0030.

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Park, Donghoon, Dongho Shin, Seung-Ki Sul, Jungwook Sim, and Young-Geun Kim. "Overvoltage Suppressing Snubber Circuit for Solid State Circuit Breaker considering System Inductances." In 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia). IEEE, 2019. http://dx.doi.org/10.23919/icpe2019-ecceasia42246.2019.8796957.

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Wang, Lujun, Boyu Feng, Yu Wang, and Bin Zuo. "Bidirectional short circuit breaker for DC microgrid based on segmented current limiting solid state circuit breaker." In 2019 4th IEEE Workshop on the Electronic Grid (eGRID). IEEE, 2019. http://dx.doi.org/10.1109/egrid48402.2019.9092714.

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Belchandan, Rakesh Kumar, Xiwen Xu, Ehab Shoubaki, Madhav Manjrekar, Tiefu Zhao, Danny Figueroa, and Ryan Kennedy. "Characterization and Performance of 600V 100A Solid-State Circuit Breaker." In 2018 9th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG). IEEE, 2018. http://dx.doi.org/10.1109/pedg.2018.8447616.

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Reports on the topic "Solid state circuit breaker"

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Urciuoli, D. Evaluation of Bidirectional Silicon Carbide Solid-State Circuit Breaker v3.2. Fort Belvoir, VA: Defense Technical Information Center, July 2013. http://dx.doi.org/10.21236/ada584403.

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Urciuoli, Damian P. Evaluation of SiC VJFET Devices for Scalable Solid-State Circuit Breakers. Fort Belvoir, VA: Defense Technical Information Center, May 2008. http://dx.doi.org/10.21236/ada481789.

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Urciuoli, Damian. A Bipolar Current Actuated Gate Driver for JFET Based Bidirectional Scalable Solid-State Circuit Breakers. Fort Belvoir, VA: Defense Technical Information Center, November 2010. http://dx.doi.org/10.21236/ad1000142.

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