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1

Kim, Jin-Young, In-Dong Kim, and Eui-Cheol Nho. "A Novel DC Solid-State Circuit Breaker for DC Grid." Transactions of the Korean Institute of Power Electronics 17, no. 4 (August 20, 2012): 368–76. http://dx.doi.org/10.6113/tkpe.2012.17.4.368.

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2

Song, Seung-Min, Jin-Young Kim, Seung-Soo Choi, In-Dong Kim, and Sun-Kyu Choi. "New Simple-Structured AC Solid-State Circuit Breaker." IEEE Transactions on Industrial Electronics 65, no. 11 (November 2018): 8455–63. http://dx.doi.org/10.1109/tie.2018.2809674.

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3

Ludin, Gul Ahmad, Mohammad Amin Amin, Hidehito Matayoshi, Shriram S. Rangarajan, Ashraf M. Hemeida, Hiroshi Takahashi, and Tomonobu Senjyu. "Solid-State DC Circuit Breakers and Their Comparison in Modular Multilevel Converter Based-HVDC Transmission System." Electronics 10, no. 10 (May 18, 2021): 1204. http://dx.doi.org/10.3390/electronics10101204.

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This paper proposes a new and surge-less solid-state direct current (DC) circuit breaker in a high-voltage direct current (HVDC) transmission system to clear the short-circuit fault. The main purpose is the fast interruption and surge-voltage and over-current suppression capability analysis of the breaker during the fault. The breaker is equipped with series insulated-gate bipolar transistor (IGBT) switches to mitigate the stress of high voltage on the switches. Instead of conventional metal oxide varistor (MOV), the resistance–capacitance freewheeling diodes branch is used to bypass the high fault current and repress the over-voltage across the circuit breaker. The topology and different operation modes of the proposed breaker are discussed. In addition, to verify the effectiveness of the proposed circuit breaker, it is compared with two other types of surge-less solid-state DC circuit breakers in terms of surge-voltage and over-current suppression. For this purpose, MATLAB Simulink simulation software is used. The system is designed for the transmission of 20 MW power over a 120 km distance where the voltage of the transmission line is 220 kV. The results show that the fault current is interrupted in a very short time and the surge-voltage and over-current across the proposed breaker are considerably reduced compared to other topologies.
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4

Li, Hui, Renze Yu, Yi Zhong, Ran Yao, Xinglin Liao, and Xianping Chen. "Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET." Micromachines 10, no. 5 (May 10, 2019): 314. http://dx.doi.org/10.3390/mi10050314.

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection circuit, energy absorption circuit, and snubber circuit of the SSCB were designed and analyzed. Lastly, a prototype of the DC SSCB with SiC MOSFET was developed, tested, and compared with the SSCB with Silicon (Si) insulated gate bipolar transistor (IGBT). Experimental results show that the designed circuits of SSCB with SiC MOSFET are valid. Also, the developed miniature DC SSCB with the SiC MOSFET exhibits faster reaction to the fault and can reduce short circuit time and fault current in contrast with the SSCB with Si IGBT. Hence, the proposed SSCB can better meet the requirements of DC microgrid protection.
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5

Meyer, C., and R. W. De Doncker. "Solid-state circuit breaker based on active thyristor topologies." IEEE Transactions on Power Electronics 21, no. 2 (March 2006): 450–58. http://dx.doi.org/10.1109/tpel.2005.869756.

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6

Goh, Hui Hwang, Sy yi Sim, Nur Iskandar Bin Hamzah, Sulaiman bin Mazlan, Chin Wan Ling, Qing Shi Chua, and Kai Chen Goh. "Types of Circuit Breaker and its Application in Substation Protection." Indonesian Journal of Electrical Engineering and Computer Science 8, no. 1 (October 1, 2017): 213. http://dx.doi.org/10.11591/ijeecs.v8.i1.pp213-220.

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Power system consists of the generation, transmission, distribution, and substation. All the power system component requires suitable protection devices as the protection system to protect the system during fault occur. In this paper, the circuit breaker has been selected as one of the protection devices in several applications. The types of circuit breaker that has been reviewed in this paper are oil circuit breaker (OCB), air circuit breaker (ACB), sulphur hexafluoride (SF6) circuit breaker, vacuum circuit breaker, and DC breaker which are hybrid DC breaker and solid-state DC breaker. Normally, the systems or the circuits disrupted or damaged by the fault. To implement the protection system in the system or circuit, the type of faults and cause of faults should be known to overcome the fault. To provide the suitable voltage for the consumer, the substation is needed to control the voltage transmitted at high voltage from the generating station. Protection system is also required in a substation.
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7

Huerner, Andreas, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications." Materials Science Forum 897 (May 2017): 661–64. http://dx.doi.org/10.4028/www.scientific.net/msf.897.661.

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In this study, the basic device features of a novel monolithically integrated solid-state-circuit-breaker (MI-SSCB) are demonstrated and analyzed using numerical simulations. Thereby, the MI-SSCB is built according to the concept of the dual thyristor. But, in comparison to similar technical solutions reported in literature, due to the advanced device structure proposed in this study a monolithically integration could be achieved for the first time.
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8

Rubino, Luigi, Guido Rubino, Pompeo Marino, and Luigi Pio Di Noia. "Smart Solid State Circuit Breaker for Photo Voltaic Power Plants." International Review of Electrical Engineering (IREE) 12, no. 5 (October 31, 2017): 409. http://dx.doi.org/10.15866/iree.v12i5.13982.

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9

Wang, Yufeng, Weilin Li, Xuanlyu Wu, and Xiaohua Wu. "A Novel Bidirectional Solid-State Circuit Breaker for DC Microgrid." IEEE Transactions on Industrial Electronics 66, no. 7 (July 2019): 5707–14. http://dx.doi.org/10.1109/tie.2018.2878191.

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10

Sagara, Mitsuhiko, Keiji Wada, and Shin-Ichi Nishizawa. "Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit Breaker." Materials Science Forum 1004 (July 2020): 1010–15. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1010.

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This paper investigates a degradation of SiC power device for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. Being much lower compared with Si devices, it has been considered an application for DC circuit breakers using SiC semiconductor. In order to use for the DCbreaker, it is essential to evaluate the destructive endurance for UIS test.This paper evaluates a deterioration phenomenon by paying attention to the decrease of the gate voltage of the SiC-MOSFETs under the degradation at repetitive UIS test.
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11

Maqsood, Atif, and Keith Corzine. "DC Microgrid Protection: Using the Coupled-Inductor Solid-State Circuit Breaker." IEEE Electrification Magazine 4, no. 2 (June 2016): 58–64. http://dx.doi.org/10.1109/mele.2016.2544240.

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12

Chen, Wanjun, Zhaoji Li, Bo Zhang, Hong Tao, Chao Liu, Yun Xia, Yijun Shi, et al. "Evaluation of CS-MCT in DC Solid-State Circuit Breaker Applications." IEEE Transactions on Industry Applications 54, no. 5 (September 2018): 5465–73. http://dx.doi.org/10.1109/tia.2018.2821092.

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13

Purgat, Pavel, Samad Shah, Nils van der Blij, Zian Qin, and Pavol Bauer. "Design criteria of solid‐state circuit breaker for low‐voltage microgrids." IET Power Electronics 14, no. 7 (April 6, 2021): 1284–99. http://dx.doi.org/10.1049/pel2.12089.

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14

Albrecht, Matthaeus, Andreas Huerner, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET." Materials Science Forum 897 (May 2017): 665–68. http://dx.doi.org/10.4028/www.scientific.net/msf.897.665.

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In this work, the feasibility of the Bipolar-Injection Field Effect-Transistor (BIFET) [5] in two different Dual Thyristor type circuits [4] for an application as solid-state circuit breaker (SSCB) is experimentally verified. The Dual Thyristor type circuits are assembled from discrete silicon JFETs and a silicon carbide BIFET and are electrically characterized at various temperatures. The current-voltage characteristic shows the expected regenerative self-triggered turn-off capability under over-currents and the option to control the turn-off current by a passive resistor network. The issue with the adverse positive temperature coefficient of the trigger-current can be solved by putting the SiC BIFET in a cascode arrangement with a silicon Dual Thyristor. In this configuration the SiC BIFET provides the high voltage blocking capability and the silicon Dual Thyristor with its negative temperature coefficient controls the trigger-current. Transient analyses of both circuits indicate fast switching times of less than 50 μs seconds. It is demonstrated for the first time, that the SiC BIFET, due to its normally-on behaviour, used in a Dual Thyristor type circuit is a promising concept for self-triggered fuses in high current and high voltage applications.
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15

Wang, Lujun, Boyu Feng, Yu Wang, Tiezhou Wu, and Huipin Lin. "Bidirectional Short-Circuit Current Blocker for DC Microgrid Based on Solid-State Circuit Breaker." Electronics 9, no. 2 (February 10, 2020): 306. http://dx.doi.org/10.3390/electronics9020306.

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In order to solve the imminent problem in that the traditional protection strategy cannot meet time requirements, together with the fact that the rotational inertia of a DC microgrid is small and short-circuit fault develops rapidly, a bidirectional short-circuit current blocker (BSCCB) based on solid-state circuit breaker for a DC microgrid is proposed. Firstly, the bidirectional current blocking circuit structure is proposed based on the analysis of key components. Then, a top-level differential protection strategy is developed based on the aforementioned proposal. Finally, the performance of the blocking circuit is simulated and verified by experiments. The results show that the proposed method can block short-circuit current within 4 ms, and the response speed of the protection strategy is very fast compared with previous approaches. BSCCB also has reclosing, bidirectional blocking and energy releasing functions. The current blocker proposed in this paper can be reused multiple times and has a promising future in low-voltage DC microgrid application.
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16

Qi, Li, Pietro Cairoli, Zach Pan, Colin Tschida, Zhenyuan Wang, V. R. Ramanan, Luca Raciti, and Antonello Antoniazzi. "Solid-State Circuit Breaker Protection for DC Shipboard Power Systems: Breaker Design, Protection Scheme, Validation Testing." IEEE Transactions on Industry Applications 56, no. 2 (March 2020): 952–60. http://dx.doi.org/10.1109/tia.2019.2962762.

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17

Rezaei, Mohammad Ali, Gang Yao Wang, Alex Q. Huang, Lin Cheng, John W. Palmour, and Charles Scozzie. "Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker." Materials Science Forum 778-780 (February 2014): 1025–29. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1025.

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This study addresses the transient and steady-state performance of a >13 kV SiC ETO as a Solid-State Circuit Breaker (SSCB). The developed SiC-ETO is based on a 1 cm2, 15 kV SiC p-GTO with an extremely low differential resistance. Static performance of the device, including the on-state voltage drop at different temperatures and different currents has been carried out in this paper. Furthermore, transient performance of the device, including the turn off energy of the device has been studied. Also, the superior performance of the p-type SiC-ETO has been exploited to design and implement a solid-state circuit breaker. The studies verify the superiority of the SiC p-ETO compared to other solid state devices for this application.
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18

Kim, Jin-Young, Seung-Soo Choi, and In-Dong Kim. "A Novel AC Solid-State Circuit Breaker with Reclosing and Rebreaking Capability." Journal of Power Electronics 15, no. 4 (July 31, 2015): 1074–84. http://dx.doi.org/10.6113/jpe.2015.15.4.1074.

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19

Baltis, Theodore, Douglas C. Hopkins, James M. Pitaressi, and Donald R. Hazelmyer. "High Thermal-Transient Packaging for a SiC-Based Solid State Circuit Breaker." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000608–18. http://dx.doi.org/10.4071/isom-2011-wa5-paper2.

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Solid-State Circuit Breakers (SSCBs), or Contactors, are critical components in next generation electric aircraft, and must be small in size, fast in response, and have high reliability. Silicon Carbide (SiC) semiconductor switches provide a series of improvements over traditional silicon-based breakers in both electrical and thermal performances. The reported SSCB uses SiC MOSFETs mounted on cast-aluminum traces, cast onto an aluminum nitride (AlN) ceramic co-captured in an aluminum composite baseplate. The system is similar to an AlSiC and Direct-Bonded-Aluminum (DBA) approach. This presentation details the transient thermal characterizations of an SSCB having the highest density in development. Previous work focused on a 30A SSCB that was constructed and tested to show a 300A, 500ns circuit breaking capability. The high density comes from allowing the SiC junctions to pulse to ∼350°C (in 5ms) from a 105°C ambient baseplate. The 30A/300A module was reported in IMAPS HiTEC’10 “Development of a SiC SSPC Module with Advanced High Temperature Packaging,” This paper builds on that paper adding the mechanical results and all new data on the larger, high energy density module with larger die. The objective of the presentation is to introduce (or update) the use of cast composite metal-ceramic structures for high thermal transient applications and document the mechanical stress/strain performance through simulations. The module is in development for military applications and has not been field-tested. This is also developed for Smart-Grid applications in local distribution systems.
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20

Liao, Xinglin, Hui Li, Ran Yao, Zhangjian Huang, and Kun Wang. "Voltage Overshoot Suppression for SiC MOSFET-Based DC Solid-State Circuit Breaker." IEEE Transactions on Components, Packaging and Manufacturing Technology 9, no. 4 (April 2019): 649–60. http://dx.doi.org/10.1109/tcpmt.2019.2899340.

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21

Li, Weilin, Yufeng Wang, Xuanlyu Wu, and Xiaobin Zhang. "A Novel Solid-State Circuit Breaker for On-Board DC Microgrid System." IEEE Transactions on Industrial Electronics 66, no. 7 (July 2019): 5715–23. http://dx.doi.org/10.1109/tie.2018.2854559.

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22

Amirthalingam. "IMPROVEMENT OF TRANSIENT STABILITY OF POWER SYSTEM USING SOLID STATE CIRCUIT BREAKER." American Journal of Applied Sciences 10, no. 6 (June 1, 2013): 563–69. http://dx.doi.org/10.3844/ajassp.2013.563.569.

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23

肖, 欣荣. "The Research of AC Solid State Circuit Breaker Applied to Distribution Grids." Smart Grid 08, no. 04 (2018): 351–59. http://dx.doi.org/10.12677/sg.2018.84039.

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24

Xu, Xiaorui, Wanjun Chen, Chao Liu, Ruize Sun, Zhaoji Li, and Bo Zhang. "An Efficient and Reliable Solid-State Circuit Breaker Based on Mixture Device." IEEE Transactions on Power Electronics 36, no. 9 (September 2021): 9767–71. http://dx.doi.org/10.1109/tpel.2021.3067316.

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25

Yaqobi, Mohammad, Hidehito Matayoshi, Mir Danish, Mohammed Lotfy, Abdul Howlader, and Senjyu Tomonobu. "Low-Voltage Solid-State DC Breaker for Fault Protection Applications in Isolated DC Microgrid Cluster." Applied Sciences 9, no. 4 (February 19, 2019): 723. http://dx.doi.org/10.3390/app9040723.

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Due to the interconnected scheme of multiple components, such as distributed generators, storage systems, and loads through converters to a common bus in DC microgrids, the possibility of fault occurrence is increasing significantly. Meanwhile, due to the huge and rapid increase of short-circuit currents, the development of a small- and large-scale DC system requires a reliable and fast protection system to ensure fault clearance and maintain safety for the rest of the system. Thus, fault protection has been focused on as one of the most critical issues in a direct current network. The application of traditional circuit-breakers for DC fault protection has the drawback of slow operation, which requires a high rating power equipment. Recently, the high speed and excellent performance capabilities of semiconductor breakers have attracted a lot of attention and been considered as an optimal solution for fast DC fault interruption. In this study, a bidirectional Insulated-Gate Bipolar Transistor (IGBT) semiconductor breaker, suitable for the fault protection of low-voltage DC networks, is proposed. The operating characteristics of this breaker are based on changes in the circuit current and terminal voltage of IGBTs. It detects the abrupt change of the terminal voltage as an abnormal condition and isolates the faulted branch in a short time to prevent the operation disturbance in the healthy part of the network. Therefore, for the entire protection of a typical 400V DC-microgrid cluster, breakers need to be integrated and examined in each branch and the interconnected lines. The proposed protection method in this study is examined in a Simulink®/MATLAB environment to analyze and assess its operation.
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26

Qin, Mo, Xun, Zhang, and Dong. "A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System." Electronics 8, no. 8 (July 26, 2019): 837. http://dx.doi.org/10.3390/electronics8080837.

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Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.
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27

URCIUOLI, D. P., and VICTOR VELIADIS. "BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLES." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 183–92. http://dx.doi.org/10.1142/s0129156409006242.

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Power electronics in hybrid-electric military ground vehicles require fast fault isolation, and benefit additionally from bi-directional fault isolation. To prevent system damage or failure, maximum fault current interrupt speeds in tens to hundreds of microseconds are necessary. While inherently providing bi-directional fault isolation, mechanical contactors and circuit breakers do not provide adequate actuation speeds, and suffer severe degradation during repeated fault isolation. Instead, it is desired to use a scalable array of solid-state devices as a solid-state circuit breaker (SSCB) having a collectively low conduction loss to provide large current handling capability and fast transition speed for current interruption. Although, both silicon-carbide (SiC) JFET and SiC MOSFET devices having high breakdown voltages and low drain-to-source resistances have been developed, neither device structure alone is capable of reverse blocking at full voltage. Limitations exist for using a dual common-source structure for either device type. Small-scale SSCB experiments were conducted using 0.03 cm2 normally-on SiC VJFETs. Based on results of these tests, a normally-on VJFET device modification is made, and a proposed symmetric SiC JFET is considered for this application.
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28

Marroqui, David, Ausias Garrigos, Jose M. Blanes, and Roberto Gutierrez. "Photovoltaic-Driven SiC MOSFET Circuit Breaker with Latching and Current Limiting Capability." Energies 12, no. 23 (December 2, 2019): 4585. http://dx.doi.org/10.3390/en12234585.

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This paper introduces a Solid State Circuit Breaker with Latching and Current Limiting capabilities for DC distribution systems. The proposed circuit uses very few electronic parts and it is fully analog. A SiC N-MOSFET driven by a photovoltaic driver and a maximum current detector circuit are the core elements of the system. This work details circuit operation under different conditions and includes experimental validation at 1 kVdc. Wide versatility, highly configurable, and very fast response, less than 1 µs in the case of short-circuit, are the most remarkable outcomes.
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29

Smith, R. K., P. G. Slade, M. Sarkozi, E. J. Stacey, J. J. Bonk, and H. Mehta. "Solid-state distribution current limiter and circuit breaker: application requirements and control strategies." IEEE Transactions on Power Delivery 8, no. 3 (July 1993): 1155–64. http://dx.doi.org/10.1109/61.252640.

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30

Qi, Li Lisa, Antonello Antoniazzi, Luca Raciti, and Davide Leoni. "Design of Solid-State Circuit Breaker-Based Protection for DC Shipboard Power Systems." IEEE Journal of Emerging and Selected Topics in Power Electronics 5, no. 1 (March 2017): 260–68. http://dx.doi.org/10.1109/jestpe.2016.2633223.

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31

Ding, Can, Taiping Nie, Xiaojian Tian, Tianfan Chen, and Zhao Yuan. "Analysis of the influence of RC buffer on DC solid-state circuit breaker." Energy Reports 6 (December 2020): 1483–89. http://dx.doi.org/10.1016/j.egyr.2020.10.066.

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32

Rodrigues, Rostan, Yu Du, Antonello Antoniazzi, and Pietro Cairoli. "A Review of Solid-State Circuit Breakers." IEEE Transactions on Power Electronics 36, no. 1 (January 2021): 364–77. http://dx.doi.org/10.1109/tpel.2020.3003358.

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33

Tapia, Lukas, Igor Baraia-Etxaburu, Juan José Valera, Alain Sanchez-Ruiz, and Gonzalo Abad. "Design of a Solid-State Circuit Breaker for a DC Grid-Based Vessel Power System." Electronics 8, no. 9 (August 29, 2019): 953. http://dx.doi.org/10.3390/electronics8090953.

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Electric propulsion and integrated hybrid power systems can improve the energy efficiency and fuel consumption of different kinds of vessels. If the vessel power system is based on DC grid distribution, some benefits such as higher generator efficiency and lower volume and cost can be achieved. However, some challenges remain in terms of protection devices for this kind of DC grid-based power system. The absence of natural zero crossing in the DC current together with the fast and programmable breaking times required make it challenging. There are several papers related to DC breaker topologies and their role in DC grids; however, it is not easy to find comprehensive information about the design process of the DC breaker itself. In this paper, the basis for the design of a DC solid-state circuit breaker (SSCB) for low voltage vessel DC grids is presented. The proposed SSCB full-scale prototype detects and opens the fault in less than 3 µs. This paper includes theoretical analyses, design guidelines, modeling and simulation, and experimental results.
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34

Liu, Jiapeng, Zhanqing Yu, Wenpeng Zhou, Zhengyu Chen, Chunpin Ren, Biao Zhao, Fengying Wang, Weifeng Ji, Meng Li, and Rong Zeng. "Ultra-Low on-State Voltage IGCT for Solid-State DC Circuit Breaker With Single-Switching Attribute." IEEE Transactions on Power Electronics 36, no. 3 (March 2021): 3292–303. http://dx.doi.org/10.1109/tpel.2020.3014392.

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35

Marroqui, David, Jose Manuel Blanes, Ausias Garrigos, and Roberto Gutierrez. "Self-Powered 380 V DC SiC Solid-State Circuit Breaker and Fault Current Limiter." IEEE Transactions on Power Electronics 34, no. 10 (October 2019): 9600–9608. http://dx.doi.org/10.1109/tpel.2019.2893104.

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36

Vemulapati, Umamaheswara, Martin Arnold, Munaf Rahimo, Antonello Antoniazzi, and Davide Pessina. "Reverse blocking IGCT optimised for 1 kV DC bi‐directional solid state circuit breaker." IET Power Electronics 8, no. 12 (December 2015): 2308–14. http://dx.doi.org/10.1049/iet-pel.2015.0028.

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37

Sano, Kenichiro, and Masahiro Takasaki. "A Surgeless Solid-State DC Circuit Breaker for Voltage-Source-Converter-Based HVDC Systems." IEEE Transactions on Industry Applications 50, no. 4 (July 2014): 2690–99. http://dx.doi.org/10.1109/tia.2013.2293819.

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38

Ren, Yu, Xu Yang, Fan Zhang, Fred Wang, Leon M. Tolbert, and Yunqing Pei. "A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs." IEEE Transactions on Power Electronics 34, no. 3 (March 2019): 2002–6. http://dx.doi.org/10.1109/tpel.2018.2861920.

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39

He, Dong, Zhikang Shuai, Zhiqi Lei, Wei Wang, Xue Yang, and Z. John Shen. "A SiC JFET-Based Solid State Circuit Breaker With Digitally Controlled Current-Time Profiles." IEEE Journal of Emerging and Selected Topics in Power Electronics 7, no. 3 (September 2019): 1556–65. http://dx.doi.org/10.1109/jestpe.2019.2906661.

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40

Radmanesh, Hamid, S. H. Fathi, G. B. Gharehpetian, and Amir Heidary. "A Novel Solid-State Fault Current-Limiting Circuit Breaker for Medium-Voltage Network Applications." IEEE Transactions on Power Delivery 31, no. 1 (February 2016): 236–44. http://dx.doi.org/10.1109/tpwrd.2015.2466094.

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41

Bălan, H., L. Neamț, M. I. Buzdugan, T. Varodi, and E. Pop. "Fault current limiter with solid-state circuit breakers." IOP Conference Series: Materials Science and Engineering 144 (August 2016): 012001. http://dx.doi.org/10.1088/1757-899x/144/1/012001.

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42

YAQOBI, Mohammad Aman, Hidehito Matayoshi, Natarajan Prabaharan, Hiroshi Takahashi, Ashraf M. Hemeida, and Senjyu Tomonobu. "Interconnected standalone DC microgrid fault protection based on Self-Adaptive DC fault current limiter with hybrid solid state circuit breaker." AIMS Energy 9, no. 5 (2021): 991–1008. http://dx.doi.org/10.3934/energy.2021045.

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<abstract><p>DC system has the potential of vast and rapid fault current generation due to multiple (line and converters) discharge capacitors and small impedance of DC lines. DC fault current spreads through the system exponentially compared to AC. Such an unexpected huge current causes a voltage drop, impacts the normal operation of system components and exposes the system to a great challenge for fault detection and interruption. For prevention of system destruction during the fault, multiple approaches such as application of Mechanical Circuit Breakers (MCBs), fuses, Solid State Circuit Breaker (SSCB), and Hybrid Solid-State Circuit Breaker (HSSCB) have been proposed and applied. In DC fault applications, fast fault detection and interruption without any interference to the other components are quite important. Therefore, semiconductor breakers have been implemented to meet the DC fault protection requirements with a high-speed operation where traditional MBs have failed. Due to the high conduction loss and low efficiency of semiconductor switches, for fast and efficient DC fault interruption, different Fault Current Limiter (FCL) types are suggested. Although a high impedance FCL can prevent the voltage fluctuations due to the current decline, it can cause operation speed issues, coordination troubles, overheat, and malfunction of protective components in a fault situation.</p> <p>This paper focused on a combination of two-way HSSCB with a self-adapt DC short current limiter, ultra-fast switch, and power electronic switch to overcome the above challenges. It can efficiently and fast fault current limiting response with low conducting loss and appropriate cooperation among protective components in a low voltage DC system. The MATLAB/Simulink is used to analyze the effectiveness and consistency of the proposed FCL-HSSCB in 400 <italic>V</italic> interconnected standalone DC microgrids.</p></abstract>
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43

Milojković, Jelena, Vančo Litovski, and Simon Le Blond. "Low-Voltage Circuit Breakers Based on WBG Solid-State Devices." Journal of Circuits, Systems and Computers 27, no. 02 (September 11, 2017): 1850020. http://dx.doi.org/10.1142/s0218126618500202.

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Conventional circuit breakers suffer from two main deficiencies: they are slow to operate and develop an electrical arc. These may be overcome by using solid-state switches which in turn introduce other problems, most significantly power dissipated while in the on-state. Nevertheless, a number of solid-state devices are candidates for implementation as low-voltage circuit breakers and there are several options based on the semiconductor material that may function as high-power switches. This paper presents a unique, extensive and systematic evaluation of these options. Voltage-controlled devices are selected due to the simplicity of the controlling circuit and their resilience to [Formula: see text]/[Formula: see text]-induced switching. Properties of fully solid-state circuit breakers are established and systematic comparisons are made among switches built of silicon and other wide bandgap (WBG) devices such as SiC MOS and GaN HEMT transistors. Using SPICE simulation it is shown that solid-state circuit breakers (SSCBs) based on WBG devices exhibit superior characteristics compared with silicon devices, with faster switching and higher voltage and current ratings. Hybrid circuit breakers, combining both conventional and solid-state switches, are discussed too and a new design circuit is simulated and compared to both conventional and fully solid-state designs.
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44

URCIUOLI, D. P., and VICTOR VELIADIS. "PERFORMANCE OF A 600-V, 30-A, BI-DIRECTIONAL SILICON CARBIDE SOLID-STATE CIRCUIT BREAKER." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 433–39. http://dx.doi.org/10.1142/s0129156411006726.

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Bi-directional solid-state circuit breakers (BDSSCBs) can provide performance benefits over mechanical fault protection devices. A common-source configuration of normally ON, junction field effect transistors (JFETs) is favorable for BDSSCB implementations. SiC 0.1-cm2 1200-V JFETs designed for normally-ON operation at a zero-volt gate bias, and having low leakage currents, were used in the fabrication of a 30-A BDSSCB switch module. Operation of the module under continuous current and during turn-OFF transitions was evaluated to verify the parallel scalability of the common-source configuration. A bi-directional snubber connected across the switch module mitigated inductive voltage overshoot during BDSSCB turn-OFF transitions. At turn-OFF, under maximum power tests in both directions, the load current was reduced from 30 A to 0 A in approximately 10 μs, with a supply voltage of 600 V, and a BDSSCB peak voltage of 680 V. These results demonstrate the functionality and current scalability of this BDSSCB topology.
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45

Tracy, Leslie, and Praveen Kumar Sekhar. "Design and Testing of a Low Voltage Solid-State Circuit Breaker for a DC Distribution System." Energies 13, no. 2 (January 10, 2020): 338. http://dx.doi.org/10.3390/en13020338.

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In this study, a low voltage solid-state circuit breaker (SSCB) was implemented for a DC distribution system using commercially available components. The design process of the high-side static switch was enabled through a voltage bias. Detailed functional testing of the current sensor, high-side switch, thermal ratings, analog to digital conversion (ADC) techniques, and response times of the SSCB was evaluated. The designed SSCB was capable of low-end lighting protection applications and tested at 50 V. A 15 A continuous current rating was obtained, and the minimum response time of the SSCB was nearly 290 times faster than that of conventional AC protection methods. The SSCB was implemented to fill the gap where traditional AC protection schemes have failed. DC distribution systems are capable of extreme faults that can destroy sensitive power electronic equipment. However, continued research and development of the SSCB is helping to revolutionize the power industry and change the current power distribution methods to better utilize clean renewable energy systems.
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46

Dong, Zhou, Ren Ren, Wen Zhang, Fei Fred Wang, and Leon M. Tolbert. "Instability Issue of Paralleled Dies in an SiC Power Module in Solid-State Circuit Breaker Applications." IEEE Transactions on Power Electronics 36, no. 10 (October 2021): 11763–73. http://dx.doi.org/10.1109/tpel.2021.3068608.

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47

Song, Xiaoqing, Chang Peng, and Alex Q. Huang. "A Medium-Voltage Hybrid DC Circuit Breaker, Part I: Solid-State Main Breaker Based on 15 kV SiC Emitter Turn-OFF Thyristor." IEEE Journal of Emerging and Selected Topics in Power Electronics 5, no. 1 (March 2017): 278–88. http://dx.doi.org/10.1109/jestpe.2016.2609845.

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48

Zhang, Hou Sheng. "Research on an Electro-Mechanical Hybrid Power Controller." Advanced Materials Research 121-122 (June 2010): 878–81. http://dx.doi.org/10.4028/www.scientific.net/amr.121-122.878.

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Electro-mechanical hybrid power controller (EMHPC) is a kind of switch with a breaker as mechanical switch and an insulated gate bipolar transistor (IGBT) as solid-state switch. It is a key element of electrical load management center (ELMC) of the more electric aircraft (MEA). On the condition of high voltage (270VDC) and large current (200A), the proposed EMHPC in this paper features great simplicity and reliability. It has no contact chatter when the controller is turned on or off, main circuit will be shut down when contactor fault happens, it also has the feature of over-current protection for solid state switching device when large current occurs in the working circuit. The proposed controller is supported by experimental results.
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49

Wang, Zhongying, and Ekkanath Madathil Sankara Narayanan. "Design of a snubber circuit for low voltage DC solid‐state circuit breakers." IET Power Electronics 14, no. 6 (March 12, 2021): 1111–20. http://dx.doi.org/10.1049/pel2.12092.

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50

Wang, Shusheng, Zhiquan Song, Peng Fu, Kun Wang, Xuesong Xu, Wei Tong, and Zhongma Wang. "Thermal Analysis of Water-Cooled Heat Sink for Solid-State Circuit Breaker Based on IGCTs in Parallel." IEEE Transactions on Components, Packaging and Manufacturing Technology 9, no. 3 (March 2019): 483–88. http://dx.doi.org/10.1109/tcpmt.2018.2868049.

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