Relevant bibliographies by topics / Solid-state electronics structures

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Solid-state electronics structures'

Author: Grafiati
Published: 28 May 2022

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Journal articles on the topic "Solid-state electronics structures"

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Ahmed, Hind, and Ahmed Hashim. "Tuning the Optical, Electronic and Thermal Characteristics of Si3N4/PVA/PEO Solid State Structures for Electronics Devices." Physics and Chemistry of Solid State 23, no. 1 (February 13, 2022): 67–71. http://dx.doi.org/10.15330/pcss.23.1.67-71.

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The present paper deals with design of Si3N4 doped PVA/PEO new structures to use in different optic, electronic, photonic and electric approaches with distinguished characteristics included few cost, high corrosion resistance, lightweight and good optical, thermal and electronic properties. The Si3N4/PVA/PEO structures were optimized and effectively simulated with a B3LYP / LanL2DZ primer. The structure stability, optical, thermal and electronic properties of Si3N4/PVA/PEO were studied. The obtained results indicated to the PVA/PEO/Si3N4 structures may be used for various optoelectronics devices with low cost and high flexibly.
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Blundell, Toby J., Fiona R. Hastings, Benjamin M. Gridley, Graeme J. Moxey, William Lewis, Alexander J. Blake, and Deborah L. Kays. "Ligand influences on homoleptic Group 12 m-terphenyl complexes." Dalton Trans. 43, no. 38 (2014): 14257–64. http://dx.doi.org/10.1039/c4dt00647j.

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The analysis of three series of two-coordinate Group 12 bis-terphenyl complexes highlights how subtle changes to ligand properties, particularly sterics, and, to a smaller extent, electronics have a large effect on the solid state structures adopted.
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Дружинин, А. А., И. П. Островский, Ю. Н. Ховерко, and Р. Н. Корецкий. "Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures." Технология и конструирование в электронной аппаратуре, no. 5-6 (December 2014): 46–50. http://dx.doi.org/10.15222/tkea2014.2.46.

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Averkov, Y., Y. Prokopenko, and V. Yakovenko. "Eigenwave spectra of a solid-state plasma cylinder in a strong longitudinal magnetic field." RADIOFIZIKA I ELEKTRONIKA 26, no. 2 (2021): 37–45. http://dx.doi.org/10.15407/rej2021.02.037.

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Subject and Purpose. Eigenwave studies of various bounded structures make a prolific line of investigation in both modern radiophysics and solid-state and functional electronics. Conducting solids demonstrating plasma (semiconductor) properties attract particular attention. Owing to the high conductivity of semiconductors (as it is inversely proportional to the charge carrier effective mass that is smaller than the free electron mass), interest exists in propagation features of slow elliptical-polarization electromagnetic waves – helicons – in magnetized semiconductor waveguides. The present work aims to determine eigenwave spectra of a solid-state plasma cylinder in a strong constant concentric magnetic field. Methods and Methodology. The eigenwave theoretical study of a magnetoplasma cylinder in the free space is conducted in terms of Maxwell's equations. The motion equation of conduction electrons of a solid-state plasma is adopted with quasi-stationarity electromagnetic field conditions satisfied. The collision frequency of majority charge carriers is assumed substantially less than their cyclotron frequency. Results. The dispersion equation of a cylindrical solid-state plasma (semiconductor) waveguide has been obtained. It has been shown that a collisionless magnetoplasma waveguide supports propagation of bulk and surface helicons. The propagation is accompanied by the surface current flowing lengthways cylinder components. Charged particle collisions destroy the surface current and initiate additional (to helicons) H-type hybrid waves such that their phase velocities coincide with phase velocities of the helicons. It has been found that the nonreciprocity effect holds for the waveguide eigenwaves having identical field distribution structures but different azimuthal propagation directions, and it also does as soon as the external magnetic field changes its sense. Conclusion. The research results have deepened our understanding of physical properties of bounded structures with plasma-like filling media. More systematization has been added to the knowledge of eigenwave behavior of these structures in a quasi-stationarity electromagnetic field.
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Rood, Jeffrey A., Ashley M. Landis, Daniel R. Forster, Timothy Goldkamp, and Allen G. Oliver. "Solvent dependence of the solid-state structures of salicylaldiminate magnesium amide complexes." Acta Crystallographica Section C Structural Chemistry 72, no. 12 (November 23, 2016): 990–96. http://dx.doi.org/10.1107/s2053229616018593.

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There are challenges in using magnesium coordination complexes as reagents owing to their tendency to adopt varying aggregation states in solution and thus impacting the reactivity of the complexes. Many magnesium complexes are prone to ligand redistributionviaSchlenk equilibrium due to the ionic character within the metal–ligand interactions. The role of the supporting ligand is often crucial for providing stability to the heteroleptic complex. Strategies to minimize ligand redistribution in alkaline earth metal complexes could include using a supporting ligand with tunable sterics and electronics to influence the degree of association to the metal atom. Magnesium bis(hexamethyldisilazide) was reacted with salicylaldimines [1L=N-(2,6-diisopropylphenyl)salicylaldimine and2L= 3,5-di-tert-butyl-N-(2,6-diisopropylphenyl)salicylaldimine] in either nondonor (toluene) or donor solvents [tetrahydrofuran (THF) or pyridine]. The structures of the magnesium complexes were studied in the solid stateviaX-ray diffraction. In the nondonor solvent,i.e.toluene, the heteroleptic complex bis{μ-2-[(2,6-diisopropylphenyl)iminomethyl]phenolato}-κ3N,O:O;κ3O:N,O-bis[(hexamethyldisilazido-κN)magnesium(II)], [Mg2(C19H22NO)2(C6H18NSi2)2] or [1LMgN(SiMe3)2]2, (1), was favored, while in the donor solvent,i.e.pyridine (pyr), the formation of the homoleptic complex {2,4-di-tert-butyl-6-[(2,6-diisopropylphenyl)iminomethyl]phenolato-κ2N,O}bis(pyridine-κN)magnesium(II) toluene monosolvate, [Mg(C27H38NO)2(C5H5N)2]·C5H5N or [{2L2Mg2(pyr)2}·pyr], (2), predominated. Heteroleptic complex (1) was crystallized from toluene, while homoleptic complexes (2) and the previously reported [1L2Mg·THF] [Quinqueet al.(2011).Eur. J. Inorg. Chem.pp. 3321–3326] were crystallized from pyridine and THF, respectively. These studies support solvent-dependent ligand redistribution in solution.In-situ1H NMR experiments were carried out to further probe the solution behavior of these systems.
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Li, Yunguo, Cláudio M. Lousada, and Pavel A. Korzhavyi. "Electronic structures and optical properties of cuprous oxide and hydroxide." MRS Proceedings 1675 (2014): 185–90. http://dx.doi.org/10.1557/opl.2014.862.

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ABSTRACTThe broad range of applications of copper, including areas such as electronics, fuel cells, and spent nuclear fuel disposal, require accurate description of the physical and chemical properties of copper compounds. Within some of these applications, cuprous hydroxide is a compound whose relevance has been recently discovered. Its existence in the solid-state form was recently reported. Experimental determination of its physical-chemical properties is challenging due to its instability and poop crystallinity. Within the framework of density functional theory calculations (DFT), we investigated the nature of bonding, electronic spectra, and optical properties of the cuprous oxide and cuprous hydroxide. It is found that the hybrid functional PBE0 can accurately describe the electronic structure and optical properties of these two copper(I) compounds. The calculated properties of cuprous oxide are in good agreement with the experimental data and other theoretical results. The structure of cuprous hydroxide can be deduced from that of cuprous oxide by substituting half Cu+ in Cu2O lattice with protons. Compared to Cu2O, the presence of hydrogen in CuOH has little effect on the ionic nature of Cu–O bonding, but lowers the energy levels of the occupied states. Thus, CuOH is calculated to have a wider indirect band gap of 2.73 eV compared with the Cu2O band gap of 2.17 eV.
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Vasileva, Fedora, Vasiliy Popov, Irina Antonova, and Svetlana Smagulova. "Screen-Printed Structures from a Highly Conductive Mildly Oxidized Graphene Suspension for Flexible Electronics." Materials 15, no. 3 (February 8, 2022): 1256. http://dx.doi.org/10.3390/ma15031256.

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In this study, the screen-printed flexible humidity sensor and supercapacitor structures from a suspension of mildly oxidized graphene (MOG) was obtained. MOG suspension with a low atomic oxygen content (~20%) was synthesized by electrochemical exfoliation of natural graphite in an aqueous solution of ammonium sulfate. MOG films (average thickness 5 μm) with a surface resistance of 102–103 kΩ/sq were obtained by screen printing on a flexible substrate. The thermal reduction of MOG films at 200 °C reduced the surface resistance to 1.5 kΩ/sq. The laser reduction with a 474 nm and 200 mW solid-state laser reduced the surface resistance to ~0.065 kΩ/sq. Various structures were screen-printed on a flexible substrate for a variety of flexible electronics applications. The structures representing a flat supercapacitor had an average specific capacitance of ~6 μF/cm2. The tensile deformations occurring during bending reduced the capacitance by 40% at a bending radius of 2 mm. Humidity sensing structures with sensitivity of 9% were obtained.
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Seymour, Ian, Tarun Narayan, Niamh Creedon, Kathleen Kennedy, Aidan Murphy, Riona Sayers, Emer Kennedy, Ivan O’Connell, James F. Rohan, and Alan O’Riordan. "Advanced Solid State Nano-Electrochemical Sensors and System for Agri 4.0 Applications." Sensors 21, no. 9 (May 1, 2021): 3149. http://dx.doi.org/10.3390/s21093149.

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Global food production needs to increase in order to meet the demands of an ever growing global population. As resources are finite, the most feasible way to meet this demand is to minimize losses and improve efficiency. Regular monitoring of factors like animal health, soil and water quality for example, can ensure that the resources are being used to their maximum efficiency. Existing monitoring techniques however have limitations, such as portability, turnaround time and requirement for additional reagents. In this work, we explore the use of micro- and nano-scale electrode devices, for the development of an electrochemical sensing platform to digitalize a wide range of applications within the agri-food sector. With this platform, we demonstrate the direct electrochemical detection of pesticides, specifically clothianidin and imidacloprid, with detection limits of 0.22 ng/mL and 2.14 ng/mL respectively, and nitrates with a detection limit of 0.2 µM. In addition, interdigitated electrode structures also enable an in-situ pH control technique to mitigate pH as an interference and modify analyte response. This technique is applied to the analysis of monochloramine, a common water disinfectant. Concerning biosensing, the sensors are modified with bio-molecular probes for the detection of both bovine viral diarrhea virus species and antibodies, over a range of 1 ng/mL to 10 µg/mL. Finally, a portable analogue front end electronic reader is developed to allow portable sensing, with control and readout undertaken using a smart phone application. Finally, the sensor chip platform is integrated with these electronics to provide a fully functional end-to-end smart sensor system compatible with emerging Agri-Food digital decision support tools.
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Borysiewicz, Michał A. "ZnO as a Functional Material, a Review." Crystals 9, no. 10 (September 28, 2019): 505. http://dx.doi.org/10.3390/cryst9100505.

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Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.
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Li, Yueqin, Zongbiao Xia, Qiang Gong, Xiaohui Liu, Yong Yang, Chen Chen, and Changhao Qian. "Green Synthesis of Free Standing Cellulose/Graphene Oxide/Polyaniline Aerogel Electrode for High-Performance Flexible All-Solid-State Supercapacitors." Nanomaterials 10, no. 8 (August 7, 2020): 1546. http://dx.doi.org/10.3390/nano10081546.

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The cellulose/graphene oxide (GO) networks as the scaffold of free-standing aerogel electrodes are developed by using lithium bromide aqueous solution, as the solvent, to ensure the complete dissolution of cotton linter pulp and well dispersion/reduction of GO nanosheets. Polyaniline (PANI) nanoclusters are then coated onto cellulose/GO networks via in-situ polymerization of aniline monomers. By optimized weight ratio of GO and PANI, the ternary cellulose/GO3.5/PANI aerogel film exhibits well-defined three-dimensional porous structures and high conductivity of 1.15 S/cm, which contributes to its high areal specific capacitance of 1218 mF/cm2 at the current density of 1.0 mA/cm2. Utilizing this cellulose/GO3.5/PANI aerogel film as electrodes in a symmetric configuration supercapacitor can result in an outstanding energy density as high as 258.2 µWh/cm2 at a power density of 1201.4 µW/cm2. Moreover, the device can maintain nearly constant capacitance under different bending deformations, suggesting its promising applications in flexible electronics.
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Dissertations / Theses on the topic "Solid-state electronics structures"

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Guerreiro, Paulo Tiago Ferraz de Meira 1967. "Solid-state laser mode-locking and ultrafast studies in quantum semiconductor structures." Diss., The University of Arizona, 1997. http://hdl.handle.net/10150/282515.

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This dissertation describes the development of ultra-short pulse solid-state lasers and the investigation of ultra-short pulse propagation in a nonlinear waveguide. We present laser design considerations involving astigmatism compensation, spot-size estimation, stability, and dispersion compensation, and their application to chromium doped forsterite lasers. Making use of the Kerr nonlinearity of the Cr:forsterite crystal we demonstrate self-mode-locking in Cr:forsterite lasers, both in the hard-aperture and soft-aperture Kerr-lens mode-locking regimes. Sub-200-fs pulses tunable between 1240 and 1285 nm were obtained, with the shortest transform-limited pulses having 45 fs duration at 90 MHz repetition rate with 100 mW output power at 1265 nm. Using a semiconductor quantum-well saturable absorber integrated with a Bragg reflector we demonstrated self-starting passive continuous-wave mode-locked operation of a Cr:forsterite laser. Self-starting mode-locking was the only operational mode of the laser and could be achieved with and without intracavity dispersion compensation. We obtained 70 fs transformed-limited pulses using a prism pair for dispersion compensation, 4 ps pulses without prisms, and pulse energies of up to 2.3 nJ at 90 MHz repetition rate at 1260 nm. Using quantum-confined nanocrystals of lead sulfide in glass as intracavity saturable absorbers we obtained self-starting passive continuous-wave mode-locking in a Cr:forsterite laser. We obtained near transform-limited 4.6 ps laser pulses at 100 MHz repetition rate, and a wide tunability range of 1207 to 1307 nm. We studied femtosecond pulse propagation near a two-photon transition in CdS quantum-dot-doped waveguides produced by the solgel and ion-exchange methods. The observed two-photon absorption and asymmetric spectral modulation of the transmitted pulses were explained by the theoretical model, which incorporated a near-resonant two-photon transition.
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Zhang, Shuo. "Analysis of Phase Transitions and Crystal Structures of Novel Benzothiophene Derivatives." University of Akron / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=akron1449831649.

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Jones, R. E. "Electronic processes in electroluminescent device structures." Thesis, Durham University, 1986. http://etheses.dur.ac.uk/7031/.

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Electronic processes in two different electroluminescent device structures, the forward biassed metal/thick insulator/semiconductor (MIS) diode and the high field metal/insulator/metal (MIM) panel, are investigated. Models are produced to explain the behaviour of two particular MIS systems which have been studied experimentally. One of these systems is the Au/cadmium stearate/n-GaP structure, where the insulator is deposited using Langmuir-Blodgett (LB) technology. The other is the Au/i-ZnS/n-ZnS structure. In the MIS devices electroluminescence occurs as a result of the recombination of electrons and holes in the semiconductor and so it is necessary to have an efficient minority carrier (hole) injection mechanism. Attention is paid to the impact excitation of the electron gas in the metal by the electrons injected from the semiconductor because this has been proposed by other workers as a process for producing holes in the metal that are energetically capable of entering the semiconductor valence band, provided they can traverse the insulator. The characteristics of the LB film devices are found to be best described by assuming the minority carrier injection to be limited by the hole transport through the insulator. Hopping between interface states on the successive LB layers is proposed as the transport mechanism. However, the device incorporating a II-VI semi-insulator is shown to be more characteristic of hole transport in the insulator valence band and a minority carrier injection which is limited by the supply of holes from the metal. In high field MIM panels the mechanism of electroluminescence is quite different with impurity centres being impact excited or impact ionised by injected electrons and subsequently luminescing. Such devices driven by a dc signal are susceptible to the formation of high current filaments which burn out and result in device failure. A model is developed which predicts that there is a voltage range over which the device can exist in either a low current state or two higher current states and the resultant instability is expected to be destructive. Current-voltage characteristics are produced using this model and their general features are found to be relatively insensitive to material and device parameters. In order to understand the evolution of the electrical state of the MIM device after switch-on, a time dependent theory of system behaviour is also developed. This is particularly important as the devices are usually driven by a pulsed signal. For an homogeneous system the current is found to converge to the lower current state of the steady state characteristic.
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Formstone, Carl. "Electronic structure of intercalation compounds." Thesis, University of Oxford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.276842.

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Moody, Aidan G. "The electronic structure of diazabutadiene complexes." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389183.

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Bush, Ian J. "The electronic structure of disordered materials." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334224.

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Charlesworth, Jason. "Electronic structure of metal-semiconductor interfaces." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239738.

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Oloumi, Mahmoud. "Electronic structure and band offsets in semiconductor heterostructures." Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314685.

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Birkett, M. J. "Opto-electronic studies of semiconductor tunnelling structures and quantum wells." Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267179.

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Zianni, X. "Electrons and phonons in low-dimensional semiconductor structures." Thesis, University of Warwick, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.387393.

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Books on the topic "Solid-state electronics structures"

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Elementary electronic structure. Singapore: World Scientific, 1999.

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Electronic structure of materials. Oxford: Clarendon Press, 1993.

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Atomic and electronic structure of solids. Cambridge, UK: Cambridge University Press, 2003.

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Bruce, Harmon, and Yaresko Alexander, eds. Electronic structure and magneto-optical properties of solids. Dordrecht: Kluwer Academic Publishers, 2004.

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Antonov, Victor. Electronic structure and magneto-optical properties of solids. Dordrecht: Kluwer Academic Publishers, 2004.

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Kaxiras, Efthimios. Atomic and electronic structure of solids. Cambridge, UK: Cambridge University Press, 2003.

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The electronic structure and chemistry of solids. Oxford [Oxfordshire]: Oxford University Press, 1987.

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Harrison, Walter A. Electronic structure and the properties of solids: The physicsof the chemical bond. New York: Dover Publications, 1989.

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Nemoshkalenko, Vladimir Vladimirovich. Vybrani prat︠s︡i v dvokh tomakh. Kiev: Akademperiodyka, 2003.

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Electronic structure and the properties of solids: The physics of the chemical bond. New York: Dover Publications, 1989.

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Book chapters on the topic "Solid-state electronics structures"

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Broglia, Ricardo A., Gianluca Colò, Giovanni Onida, and H. Eduardo Roman. "Electronic Structure." In Solid State Physics of Finite Systems, 35–59. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09938-4_3.

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Bechstedt, Friedhelm. "Quasiparticle Electronic Structures." In Springer Series in Solid-State Sciences, 351–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-662-44593-8_16.

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Razeghi, Manijeh. "Electronic Structure of Atoms." In Fundamentals of Solid State Engineering, 1–28. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-75708-7_1.

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Fink, Jörg. "Electronic structure of conducting polymers." In Advances in Solid State Physics, 157–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/bfb0108142.

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Koch, F. "Electronic Transport in Regular Doping Structures." In Springer Series in Solid-State Sciences, 377–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84408-9_55.

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Przewoźnik, Janusz, T. Tyliszczak, D. Rybicki, J. Żukrowski, W. Szczerba, M. Sikora, Cz Kapusta, et al. "Structural, Magnetic and Electronic Properties of Surface Oxidised Fe Nanoparticles." In Solid State Phenomena, 47–54. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-57-4.47.

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Bovensiepen, Uwe, Silke Biermann, and Luca Perfetti. "The Electronic Structure of Solids." In Dynamics at Solid State Surfaces and Interfaces, 1–25. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527646463.ch1.

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Fujiwara, T., and T. Yokokawa. "Electronic Structure in Three-Dimensional Quasicrystals." In Springer Series in Solid-State Sciences, 196–204. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84253-5_21.

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Hüfner, S. "Electronic Structure of Transition Metal Compounds." In Springer Series in Solid-State Sciences, 107–13. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84345-7_22.

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Turek, I., and J. Hafner. "Electronic Structure of Alkaline-Earth Fullerides." In Springer Series in Solid-State Sciences, 119–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-85049-3_19.

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Conference papers on the topic "Solid-state electronics structures"

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Senami, Masato, and Akitomo Tachibana. "Quantum chemical approaches to the electronic structures of nano-electronics materials." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667357.

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Kholomina, T. A., A. D. Maslov, V. V. Gudzev, and N. V. Vishnyakov. "Laboratory complexes to study properties of materials and structures of solid state electronics." In 2018 ELEKTRO. IEEE, 2018. http://dx.doi.org/10.1109/elektro.2018.8398380.

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Grutzmacher, D., M. Mikulics, and H. Hardtdegen. "Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures." In ESSDERC 2016 - 46th European Solid-State Device Research Conference. IEEE, 2016. http://dx.doi.org/10.1109/essderc.2016.7599652.

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Kaji, Hironori, Tatsuya Fukushima, Masashi Fukuchi, Takeshi Komino, and Chihaya Adachi. "Investigation of aggregated structures in organic light-emitting diodes: approach from solid-state NMR." In SPIE Organic Photonics + Electronics, edited by Franky So and Chihaya Adachi. SPIE, 2012. http://dx.doi.org/10.1117/12.956449.

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Enikov, Eniko T., Carlos Gamez, Shezaan Kanjiyani, Mahdi Ganji, and Joshua Gill. "Flexible Electrode Structures for Thermo-Tunneling Applications." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-62903.

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Combined thermionic emission and tunneling of hot electrons (thermo-tunneling) has emerged as a potential new solid-state cooling technology. Practical implementation of thermo-tunneling, however, requires the formation of a nanometer-sized gap spanning macroscopically significant surfaces. Thermo-tunneling of hot electrons across a few-nanometer gap has application to vacuum electronics, flat panel displays, and holds great potential in thermo-electric cooling and energy generation. Development of new thermo-tunneling applications requires creation of a stable nanometer gap between two surfaces. This presentation is focused on our effort to investigate the feasibility of creating such gaps using distributed electro-magnetic forces arising in thin-film flexible structures. Early efforts based on rigid electrodes showed that the effective tunneling approaches 400 square-micrometers, which albeit small, could lead to useful practical systems. In this presentation, we report a theoretical and experimental investigation of a thin-electrode system which could lead to further increase on the effective tunneling area. The device under study consists of a thin membrane collector electrode (anode) suspended over the emitting electrode (cathode). The structure is placed in a vacuum enclosure with an externally generated magnetic field perpendicular to the current flow in the membrane. The resulting Lorentz force is then directed upwards, separating the two surfaces. A mathematical model of the steady-state operation of the device is presented along with predictions of the contact area and tunneling current. Essential output parameters of the model include a central contact area measured by its length (delta) and the thermo-tunneling current. Both parameters are determined as a function of the externally applied external potential and magnetic field. Numerical solutions of the model show two possible operating modes: (1) symmetric deformation with negligibly small current; and (2) asymmetric mode where the B-field controls the current and contact area.
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Soni, Sheetal, K. G. M. Nair, D. M. Phase, and Ratnesh Gupta. "Structural characterization and electronic structure of laser treated TiN thin film." In SOLID STATE PHYSICS: Proceedings of the 56th DAE Solid State Physics Symposium 2011. AIP, 2012. http://dx.doi.org/10.1063/1.4710184.

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Sahu, Jyoti, Sudhish Kumar, P. A. Alvi, D. M. Phase, M. Gupta, and S. Dalela. "Study of structural, optical and electronic structure properties of Sm2O3-ZnO nanomaterials." In DAE SOLID STATE PHYSICS SYMPOSIUM 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0016742.

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Ali, Asif, B. H. Reddy, and Ravi Shankar Singh. "Electronic structure of SrMoO3." In DAE SOLID STATE PHYSICS SYMPOSIUM 2018. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5113228.

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Kapoor, Pooja, Munish Sharma, Ashok Kumar, and P. K. Ahluwalia. "Structural, electronic and magnetic properties of Au-based monolayer derivatives in honeycomb structure." In DAE SOLID STATE PHYSICS SYMPOSIUM 2015. Author(s), 2016. http://dx.doi.org/10.1063/1.4947734.

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Sahoo, Aloka Ranjan, and S. Mathi Jaya. "Structural stability and electronic structure of Cr substituted MoS2: An ab-initio study." In DAE SOLID STATE PHYSICS SYMPOSIUM 2018. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5113232.

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Reports on the topic "Solid-state electronics structures"

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Chelikowsky, J. R. Theory of the electronic and structural properties of solid state oxides. Office of Scientific and Technical Information (OSTI), January 1990. http://dx.doi.org/10.2172/6564106.

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Chelikowsky, J. R. Theory of the electronic and structural properties of solid state oxides. Annual technical report 1993. Office of Scientific and Technical Information (OSTI), June 1993. http://dx.doi.org/10.2172/10162151.

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Haddon, Robert C. Final Report for DOE Grant 97-00, Solid state electronic structure and properties of neutral carbon-based radicals. Office of Scientific and Technical Information (OSTI), November 2001. http://dx.doi.org/10.2172/805758.

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Barbara, Paul F. Ultrafast Near-Field Scanning Optical Microscopy (NSOM) of Emerging Display Technology Media: Solid State Electronic Structure and Dynamics,. Fort Belvoir, VA: Defense Technical Information Center, May 1995. http://dx.doi.org/10.21236/ada294879.

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Chelikowsky, J. R. Theory of the electronic and structural properties of solid state oxides. Progress report, [July 1, 1992--June 30, 1993]. Office of Scientific and Technical Information (OSTI), January 1993. http://dx.doi.org/10.2172/10159378.

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Chelikowsky, J. R. Theory of the electronic and structural properties of solid state oxides. Progress report, [July 1, 1991--June 30, 1992]. Office of Scientific and Technical Information (OSTI), October 1991. http://dx.doi.org/10.2172/10159577.

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