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Relevant bibliographies by topics / Space charge doping

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Journal articles

Academic literature on the topic 'Space charge doping'

Author: Grafiati

Published: 25 May 2024

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Journal articles on the topic "Space charge doping"

1

Liu, Peng, Xi Pang, Zongliang Xie, et al. "Space charge characteristics in epoxy/nano-MgO composites: Experiment and two-dimensional model simulation." Journal of Applied Physics 132, no. 16 (2022): 165501. http://dx.doi.org/10.1063/5.0104268.

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Space charge accumulation in polymer dielectrics may lead to serious electric field distortion and even insulation failure during long-term operations of power equipment and electronic devices, especially under conditions of high temperature and direct current electric stress. The addition of nanoparticles into polymer matrices has been found effective in suppressing space charge accumulation and alleviating electric field distortion issues. Yet, the underlying mechanisms of nanoparticle doping remain a challenge to explore, especially from multi-dimensional composite insights. Here, a two-dim

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2

Utamuradova, Sh B., and E. M. Naurzalieva. "SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES." SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS 3, no. 2 (2021): 41–46. http://dx.doi.org/10.37681/2181-1652-019-x-2021-2-7.

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The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer charge , total charge of semiconductor, inversion layer width and SCR semiconductor total width were m ade. Also, dependence theses quantities from doping level, temperature and surface potential were obtained

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3

Jin, Xin, and Hai Wang. "Space Charge Limited Current and Magnetoresistance in Si." Advanced Materials Research 750-752 (August 2013): 952–55. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.952.

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Mott and Gurney point out1, for defect-free semiconductors, I-V curve deviates from linear Ohmic type to nonlinear space-charge limited behavior at high electric field. A surprising large magnetoresistance (MR) has been reported in space-charge limited region by Delmo2-4recently. In present work, I-V and MR curves of silicon samples with different doping concentration are measured. It is observed that I-V curve enters into space charge region at lower voltage in heavily doped samples, however, space-charge limited current is absent in lightly doped samples. Two samples show different types of

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4

Chen, Inan. "Theoretical analyses of space-charge doping in amorphous semiconductor superlattices. I. Doping superlattices." Physical Review B 32, no. 2 (1985): 879–84. http://dx.doi.org/10.1103/physrevb.32.879.

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5

Chen, Inan. "Space charge doping effects in amorphous semiconductor multi-layers." Journal of Non-Crystalline Solids 77-78 (December 1985): 1093–96. http://dx.doi.org/10.1016/0022-3093(85)90848-8.

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6

Kabalan, Amal. "Controlling the Doping Depth in Silicon Micropillars." Applied Sciences 10, no. 13 (2020): 4581. http://dx.doi.org/10.3390/app10134581.

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Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>1020 cm−3) that will allow the formation of a quasi-neutral region (QNR) and space charge region (SCR) in its tiny geometry. This experimental study investigates an approach that allows shallow and heavy doping in silicon micropillars. It aims to demonstrate that silicon dioxide (SiO2) can be used to control the

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7

Vermeersch, Rémy, Gwénolé Jacopin, Bruno Daudin, and Julien Pernot. "DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current." Applied Physics Letters 120, no. 16 (2022): 162104. http://dx.doi.org/10.1063/5.0087789.

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Electrical properties of silicon doped AlN nanowires grown by plasma assisted molecular beam epitaxy were investigated by means of temperature dependent current–voltage measurements. Following an Ohmic regime for bias lower than 0.1 V, a transition to a space-charge limited regime occurred for higher bias. This transition appears to change with the doping level and is studied within the framework of the simplified theory of space-charge limited current assisted by traps. For the least doped samples, a single, doping independent trapping behavior is observed. For the most doped samples, an elec

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8

Nath, Chandrani, and A. Kumar. "Doping level dependent space charge limited conduction in polyaniline nanoparticles." Journal of Applied Physics 112, no. 9 (2012): 093704. http://dx.doi.org/10.1063/1.4763362.

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9

Ahmad, Ashfaq, Pawel Strak, Pawel Kempisty, et al. "Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality." Journal of Applied Physics 132, no. 6 (2022): 064301. http://dx.doi.org/10.1063/5.0098909.

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In this work, we study the emergence of polarization doping in AlxGa1−xN layers with graded composition from a theoretical viewpoint. It is shown that bulk electric charge density emerges in the graded concentration region. The magnitude of the effect, i.e., the relation between the polarization bulk charge density and the concentration gradient is obtained. The appearance of mobile charge in the wurtzite structure grown along the polar direction was investigated using the combination of ab initio and drift-diffusion models. It was shown that the ab initio results can be recovered precisely by

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10

Peña-Camargo, Francisco, Jarla Thiesbrummel, Hannes Hempel, et al. "Revealing the doping density in perovskite solar cells and its impact on device performance." Applied Physics Reviews 9, no. 2 (2022): 021409. http://dx.doi.org/10.1063/5.0085286.

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Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterization techniques, comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumenta

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