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Journal articles on the topic 'Specific detectivity'

Author: Grafiati
Published: 7 June 2025
Last updated: 2 August 2025

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1

Czuba, Krzysztof, Łukasz Ciura, Iwona Sankowska, Ewa Papis-Polakowska, and Agata Jasik. "The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes." Sensors 21, no. 21 (2021): 7005. http://dx.doi.org/10.3390/s21217005.

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In this paper, the results of the electrical, noise, and optical characterization of p-i-n and p-B-i-n diodes with AlSb and 4 ML AlSb/8 ML GaSb superlattice barriers in High-Operating Temperature conditions, are presented. Experimental and theoretical noise parameters were compared. Both dark current and noise analysis showed that the p-Bp_bulk-i-n bariode had the best performance. P-i-n photodiodes had the highest experimental value of specific detectivity (D*) of 6.16 × 109 Jones at 210 K and zero bias. At about −1 V reverse bias, the bariode with AlSb/GaSb electron barrier caught up to it a
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2

Preece, Bradley L., and George Nehmetallah. "Standardized target-specific detectivity metric for computational imaging systems." Journal of the Optical Society of America A 34, no. 9 (2017): 1687. http://dx.doi.org/10.1364/josaa.34.001687.

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3

Wang, Yifei, Xiaoping Zou, Jialin Zhu, et al. "Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor." Coatings 11, no. 9 (2021): 1099. http://dx.doi.org/10.3390/coatings11091099.

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With the development of the semiconductor industry, research on photoelectronic devices has been emphasized. In this paper, a molecular semiconductor material with a narrow bandgap of hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was utilized to prepare photodetectors without electron transport layers. Using a single light source, the effects of different wavelengths and different powers on the photoresponsivity, switching ratio, specific detectivity, and external quantum efficiency of the device were investigated. It is demonstrated that this device has excellent responsivity, specific de
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4

Parfenov P.S., Grinevich Y.V., Sokolova A.V., et al. "Effect of Ligands on the Photoconductivity of HgTe Nanoplatelets." Optics and Spectroscopy 130, no. 11 (2022): 1487. http://dx.doi.org/10.21883/eos.2022.11.55111.3871-22.

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Near-IR semiconductor colloidal nanoplatelets (NPs) are a new and promising class of materials for the development of photodetectors because they can effectively absorb visible and infrared optical radiation. In this work, we study the photoconductivity of HgTe colloidal nanoplatelets with ligands of 1,2-ethanedithiol and tetrabutylammonium iodide. It has been shown that the choice of ligands is a key factor in achieving high operational characteristics. It has been shown that the photoconductivity sensitivity reaches 0.995 and the specific detectivity reaches 1.2·109 J Jones when 1,2-ethadith
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5

Shen, Ting, David Binks, Jifeng Yuan, Guozhong Cao, and Jianjun Tian. "Enhanced-performance of self-powered flexible quantum dot photodetectors by a double hole transport layer structure." Nanoscale 11, no. 19 (2019): 9626–32. http://dx.doi.org/10.1039/c9nr01096c.

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6

Jang, Moon-Hyung, Michael T. Kramer, Sung-Shik Yoo, and Mool C. Gupta. "Laser annealing to improve PbSe thin film photosensitivity and specific detectivity." Applied Optics 59, no. 30 (2020): 9409. http://dx.doi.org/10.1364/ao.401535.

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7

Li, Xiao Xia, Kai Zhou, Xin Hong, Wen Lin Feng, and Da Peng Wei. "Influence of Working Temperature on the InSb/Si Heterojunction Photodetectors Performance." Materials Science Forum 1001 (July 2020): 104–9. http://dx.doi.org/10.4028/www.scientific.net/msf.1001.104.

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Traditional silicon-based photodetectors are limited by the band gap of silicon, which results in a limited working wavelength range. In this report, due to the excellent properties of Indium Antimonide, the InSb/Si heterojunction photodetectors are fabricated. Under ambient temperature of 280K, as-prepared photodetectors show a specific detectivity of 9.31011 cm Hz1/2/W, responsivity of 54 mA/W, on/off ratio of 5104 under the laser irradiation of 635 nm. In order to explore the influence of working temperature on device performance, the photoresponse at different temperatures was tested. This
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8

Yu, Yuan-Fang, Ye Zhang, Fan Zhong, et al. "Highly Sensitive Mid-Infrared Photodetector Enabled by Plasmonic Hot Carriers in the First Atmospheric Window." Chinese Physics Letters 39, no. 5 (2022): 058501. http://dx.doi.org/10.1088/0256-307x/39/5/058501.

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The first atmospheric window of 3–5 μm in the mid-infrared (MIR) spectral range pertains to crucial application fields, with particular scientific and technological importance. However, conventional narrow-bandgap semiconductors operating at this band, represented by mercury cadmium telluride and indium antimonide, suffer from limited specific detectivity at room temperature and hindered optoelectronic integration. In this study, a plasmonic hot electron-empowered MIR photodetector based on Al-doped ZnO (AZO)/bi-layer graphene heterostructure is demonstrated. Free electrons oscillate coherentl
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9

Zhang, Kai, Tao Luo, Haoran Chen, Zheng Lou, and Guozhen Shen. "Au-nanoparticles-decorated Sb2S3 nanowire-based flexible ultraviolet/visible photodetectors." Journal of Materials Chemistry C 5, no. 13 (2017): 3330–35. http://dx.doi.org/10.1039/c7tc00696a.

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Flexible ultraviolet/visible photodetectors were fabricated with Au-nanoparticles-decorated Sb<sub>2</sub>S<sub>3</sub> nanowires, exhibiting high responsivity, specific detectivity and good stability.
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10

Zhuo, Ranran, Yuange Wang, Di Wu, et al. "High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction." Journal of Materials Chemistry C 6, no. 2 (2018): 299–303. http://dx.doi.org/10.1039/c7tc04754a.

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11

Wang, Yuange, Xiaowen Huang, Di Wu, et al. "A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm." Journal of Materials Chemistry C 6, no. 18 (2018): 4861–65. http://dx.doi.org/10.1039/c8tc01237g.

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High-performance room-temperature infrared photodetectors based on MoS<sub>2</sub>/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.
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12

Abd, Ahmed N., Wasna'a M. Abdulridha, and Mohammed Odda Dawood. "Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode." International Letters of Chemistry, Physics and Astronomy 63 (January 2016): 67–76. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.63.67.

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In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant
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13

Abd, Ahmed N., Wasnaa Mohammed Abdulridha, and Mohammed Odda Dawood. "Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode." International Letters of Chemistry, Physics and Astronomy 63 (January 4, 2016): 67–76. http://dx.doi.org/10.56431/p-xhu97d.

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In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant
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14

Jia, Cheng, Di Wu, Enping Wu, et al. "A self-powered high-performance photodetector based on a MoS2/GaAs heterojunction with high polarization sensitivity." Journal of Materials Chemistry C 7, no. 13 (2019): 3817–21. http://dx.doi.org/10.1039/c8tc06398b.

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A high-performance self-powered photodetector based on a MoS<sub>2</sub>/GaAs heterojunction was demonstrated, which demonstrated a high responsivity, specific detectivity, fast response speeds, as well as high polarization sensitivity.
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15

Huangfu, Xuefeng, Junyu Chen, Gaohui Ge, et al. "2D/3D Perovskite Surface Passivation-Enabled High-Detectivity Near-Infrared Photodiodes." Sensors 25, no. 9 (2025): 2740. https://doi.org/10.3390/s25092740.

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Due to high responsivity and wide spectral sensitivity, metal halide perovskite photodiodes have a wide range of applications in the fields of visible light and near-infrared photodetection. Specific detectivity is an important quality factor for high-performance perovskite-based photodiodes, while one of the keys to achieving high detectivity is to reduce dark current. Here, 3-fluoro phenethylammonium iodide (3F-PEAI) was used to passivate the perovskite surface and form the two-dimensional (2D) perovskite on the three-dimensional (3D) perovskite surface. The as-fabricated passivated perovski
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16

Hui-jun, TIAN, LIU Qiao-li, YUE Heng, HU An-qi, and GUO Xia. "Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed." Chinese Optics 14, no. 1 (2021): 1–7. http://dx.doi.org/10.37188/co.2020-0153.

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17

Ramos, P., A. de Andres, and A. López. "EFFECT OF THERMAL LOSSES ON THE SPECIFIC DETECTIVITY OF PYROELECTRIC INFRARED DETECTORS." Integrated Ferroelectrics 92, no. 1 (2007): 147–59. http://dx.doi.org/10.1080/10584580701748810.

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18

Ba, Yanshuang, Xiaoping Xie, Weidong Zhu, et al. "In situ, seed-free formation of a Ruddlesden–Popper perovskite Cs2PbI2Cl2 nanowires/PbI2 heterojunction for a high-responsivity, self-powered photodetector." Journal of Materials Chemistry C 10, no. 9 (2022): 3538–46. http://dx.doi.org/10.1039/d1tc05538k.

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The Cs2PbI2Cl2 nanowires/PbI2 heterojunction enlarged the built-in field (Eb), which led to the suppressed carrier recombination and enhanced carrier transportation. The resulting device reached a specific detectivity (D*) maximum of 3.02 × 1012 Jones.
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19

Kim, Ji Eun, Won Tae Kang, Van Tu Vu, et al. "Ideal PN photodiode using doping controlled WSe2–MoSe2 lateral heterostructure." Journal of Materials Chemistry C 9, no. 10 (2021): 3504–12. http://dx.doi.org/10.1039/d0tc05625a.

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As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes.
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20

Chen, Hao, Junyi Zhu, Yang Cao, et al. "Significantly enhanced photoresponse of carbon nanotube films modified with cesium tungsten bronze nanoclusters in the visible to short-wave infrared range." RSC Advances 11, no. 63 (2021): 39646–56. http://dx.doi.org/10.1039/d1ra06817b.

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Compared with CNT film detectors, the CsxWO3–CNT composite film detector shows a significantly enhanced photoresponse from visible light to short-wave infrared region, with an average increase of 400% in responsivity and 549% in specific detectivity.
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21

Sun, Yiming, Wei Gao, Xueping Li, et al. "Anti-ambipolar behavior and photovoltaic effect in p-MoTe2/n-InSe heterojunctions." Journal of Materials Chemistry C 9, no. 32 (2021): 10372–80. http://dx.doi.org/10.1039/d1tc02497c.

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The MoTe2/InSe heterojunctions exhibit an anti-ambipolar behavior with high peak-to-valley current ratio (&gt;103) and a high self-driven photodetection performance with photoresponsivity of 15.4 mA W−1 and specific detectivity up to ∼3.02 × 1014 Jones.
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22

Jia, Cheng, Xiaowen Huang, Di Wu, et al. "An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction." Nanoscale 12, no. 7 (2020): 4435–44. http://dx.doi.org/10.1039/c9nr10348a.

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A self-driven photodetector based on WS<sub>2</sub>/GaAs type-II Zener heterojunction is fabricated, which shows a broadband response spectrum from 200 to 1550 nm beyond the limitation of the bandgaps with a high responsivity and specific detectivity.
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23

Mone, Mariza, Kaixuan Yang, Petri Murto, Fujun Zhang, and Ergang Wang. "Low-gap zinc porphyrin as an efficient dopant for photomultiplication type photodetectors." Chemical Communications 56, no. 84 (2020): 12769–72. http://dx.doi.org/10.1039/d0cc03933k.

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A porphyrin molecule, Por4IC, facilitates a photomultiplication effect in blend with P3HT, giving rise to a high external quantum efficiency of 22 182% and a specific detectivity of 4.4 × 10<sup>12</sup> Jones at 355 nm and at −15 V bias.
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24

Feng Yan, Xiaobin, S. Aslam, et al. "4H-SiC UV photo detectors with large area and very high specific detectivity." IEEE Journal of Quantum Electronics 40, no. 9 (2004): 1315–20. http://dx.doi.org/10.1109/jqe.2004.833196.

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25

Liu, Jiawei, Xin Wang, Huaxin Zhu, Yunchao Li, Bohao Lv та Wenqiang Qiao. "π-bridge-engineered naphthalenediimide copolymers for all-polymer photodetectors with high specific detectivity". Polymer 335 (вересень 2025): 128852. https://doi.org/10.1016/j.polymer.2025.128852.

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26

Lee, Seon-Ju, Gyu Min Kim, and Se-Young Oh. "Improving the Performance of Organic Photodetector Using Hf-SnO2 as an Electron Transport Layer." Science of Advanced Materials 13, no. 6 (2021): 1096–100. http://dx.doi.org/10.1166/sam.2021.3984.

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The adequate control of dark current is the key to achieving high detectivity in organic photodetectors (OPDs). In this study, we incorporated hafnium (Hf), a rare earth mineral, into tin oxide (SnO2) to form hafnium doped SnO2 (Hf-SnO2) as an electron transport layer (ETL) in OPDs. It was observed that the performance of OPDs with a Hf-SnO2 electron transport layer in OPDs is superior to that of conventional SnO2 as it significantly reduces the leakage current recording a high specific detectivity of 8.70 × 1011 Jones and a bandwidth of 229.63 kHz at −1 V and 525 nm. Furthermore, Hf-SnO2 can
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27

Liu, Zeng, Shan Li, Zuyong Yan та ін. "Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications". Journal of Materials Chemistry C 8, № 15 (2020): 5071–81. http://dx.doi.org/10.1039/d0tc00100g.

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A dual-mode, sensitive β-Ga<sub>2</sub>O<sub>3</sub> MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 10<sup>11</sup> Jones.
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28

Kim, Cihyun, Tae Jin Yoo, Min Gyu Kwon, Kyoung Eun Chang, Hyeon Jun Hwang, and Byoung Hun Lee. "High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction." Nanophotonics 11, no. 5 (2022): 1041–49. http://dx.doi.org/10.1515/nanoph-2021-0738.

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Abstract The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active junctions enabled efficient collection of photocarriers, resulting in a responsivity of 2.02 A W−1 and a specific detectivity of 5.28 × 1010 Jones with reduced dark current and improved external quantum efficiency; these results are more than doubled compared with the responsivity of 0.85 A W−1 and detectivity of 1.69 × 1010 Jones for a single activ
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29

Abderrahmane, Abdelkader, Changlim Woo, and Pil-Ju Ko. "Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor." Coatings 12, no. 4 (2022): 445. http://dx.doi.org/10.3390/coatings12040445.

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Herein, we report the fabrication of a novel heterojunction field-effect transistor (HJFET) based on two-dimensional graphene (Gr), molybdenum diselenide (MoSe2), and black phosphorus (BP) that is shielded using hexagonal boron nitride to prevent device degradation. We perform electrical and optoelectronic characterizations of Gr/n-MoSe2 and Gr/n-MoSe2/p-BP heterojunctions. Heterojunction n-MoSe2/p-BP exhibits a potential barrier at the interface, which allows the use of BP as a top-gate contact to adjust the electrical and optoelectronic performances of the Gr/n-MoSe2 heterojunction. In the a
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30

Li, Jiakai, R. K. Saroj, Steven Slivken, V. H. Nguyen, Gail Brown, and Manijeh Razeghi. "High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE." Photonics 9, no. 9 (2022): 664. http://dx.doi.org/10.3390/photonics9090664.

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In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on InAs/InAs1−xSbx type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 μm at 77 K. The superlattice for the device was grown by molecular beam epitaxy while the planar device structure was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K, the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and 48% respectively at 3.7 μm under −20 mV for the MWIR planar photodetector. At 77 K, the MWIR planar photodetector exhib
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31

Su, Y. K., Fuh-Shyang Juang, Shing-Ming Chang, Cheng-Der Chiang, and Ya-Tung Cherng. "1/f noise and specific detectivity of HgCdTe photodiodes passivated with ZnS-CdS films." IEEE Journal of Quantum Electronics 35, no. 5 (1999): 751–56. http://dx.doi.org/10.1109/3.760322.

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32

Somvanshi, Divya, Dilip Chauhan, A. G. Unil Perera, Lianhe Li, Li Chen, and Edmund H. Linfield. "Reduced Dark Current With a Specific Detectivity Advantage in Extended Threshold Wavelength Infrared Detector." IEEE Sensors Letters 3, no. 5 (2019): 1–4. http://dx.doi.org/10.1109/lsens.2019.2915016.

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33

Liu, Weiguo, Ling Ling Sun, Weiguang Zhu, and Ooi Kiang Tan. "Noise and specific detectivity of pyroelectric detectors using lead titanate zirconate (PZT) thin films." Microelectronic Engineering 66, no. 1-4 (2003): 785–91. http://dx.doi.org/10.1016/s0167-9317(02)01000-6.

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34

Zhu, Junqiang, Xiaofei Yue, Jiajun Chen, et al. "Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction." Applied Sciences 13, no. 10 (2023): 6024. http://dx.doi.org/10.3390/app13106024.

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Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction devices with low photoresponsivity and detectivity. This work reports an ultrasensitive phototransistor based on a laser-induced p-doped WSe2/MoS2 van der Waals heterojunction. The laser treatment is used for p-doping WSe2 nanoflakes using high work function WOx. Then, an n-type MoS2 nanoflake is t
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35

Yu, Jing, Yuegang Fu, Lidan Lu, Weiqiang Chen, Jianzhen Ou, and Lianqing Zhu. "Extended Shortwave Infrared T2SL Detector Based on AlAsSb/GaSb Barrier Optimization." Micromachines 16, no. 5 (2025): 575. https://doi.org/10.3390/mi16050575.

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Extended shortwave infrared (eSWIR) detectors operating at high temperatures are widely utilized in planetary science. A high-performance eSWIR based on pBin InAs/GaSb/AlSb type-II superlattice (T2SL) grown on a GaSb substrate is demonstrated. It achieves the optimization of the device’s optoelectronic performance by adjusting the p-type doping concentration in the AlAs0.1Sb0.9/GaSb barrier. Experimental and TCAD simulation results demonstrate that both the device’s dark current and responsivity grow as the doping concentration rises. Here, the bulk dark current density and bulk differential r
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36

Gu, C. F., Y. C. Cheng, Q. Y. Dai, et al. "Towards high-performance near-infrared photodetectors based on SnS nanowires." Europhysics Letters 136, no. 2 (2021): 27003. http://dx.doi.org/10.1209/0295-5075/ac4528.

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Abstract Compared with bulk structures, semiconductor nanowires exhibit a higher surface-to-volume ratio, as well as unique electrical and optical properties. Due to its narrow band gap, tin (ii) sulfide (SnS) nano wire is a promising candidate for constructing near-infrared (NIR) photodetectors. Uniformly distributed and well-aligned SnS nanowires were grown on a mica substrate by chemical vapor deposition, and NIR photodetectors with Au (Au-device) and Al (Al-device) as the electrode were fabricated and characterized. Compared to the Au-device, the Al-device achieved higher photodetectivity
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37

Mei, Tong, Shan Li, Shaohui Zhang, Yuanyuan Liu та Peigang Li. "Simply equipped ε-Ga2O3 film/ZnO nanoparticle heterojunction for self-powered deep UV sensor". Physica Scripta 97, № 1 (2022): 015808. http://dx.doi.org/10.1088/1402-4896/ac476e.

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Abstract In this paper, a ε-Ga2O3 film/ZnO nanoparticle hybrid heterojunction deep ultraviolet (UV) photodetector is described for 254 nm wavelength sensing application. The constructed ε-Ga2O3/ZnO heterojunction photodetector can operate in dual modes which are power supply mode and self-powered mode. Under reverse 5 V bias with 254 nm light intensity of 500 μW cm−2, the photoresponsivity, specific detectivity and external quantum efficiency are 59.7 mA W−1, 7.83 × 1012 Jones and 29.2%. At zero bias, the advanced ε-Ga2O3/ZnO photodetector performs decent self-powered photoelectrical propertie
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Zhou, Guigang, Huancheng Zhao, Xiangyang Li, et al. "Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid." Nanomaterials 12, no. 3 (2022): 475. http://dx.doi.org/10.3390/nano12030475.

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The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible
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39

Gavranović, Stevan, Jan Pospisil, Vitezslav Novak, and Petr Vanysek. "Perovskite Single Crystals for Energy Conversion of Solar Radiation." ECS Transactions 105, no. 1 (2021): 261–67. http://dx.doi.org/10.1149/10501.0261ecst.

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Experimental part describes synthesis, structural and optical properties of MAPbBr3 single crystals and electrical characterization of the Au/MAPbBr3/Au light-sensitive assembly. Its parameters (responsivity, external quantum efficiency and specific detectivity) are calculated based on the spectral and switching (on/off) current responses. The material is further discussed as a detector and a possible active component for photovoltaic panels.
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40

Han, Jinfeng, Dezhi Yang, Yang Wang, Dongge Ma, Wenqiang Qiao, and Zhi Yuan Wang. "Low-LUMO acceptor polymers for high-gain all-polymer photodiodes." Journal of Materials Chemistry C 6, no. 40 (2018): 10838–44. http://dx.doi.org/10.1039/c8tc03753a.

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Three acceptor polymers with different LUMO energy levels were synthesized. High-gain all-polymer photodiodes based on low-LUMO acceptor polymers exhibit a high specific detectivity of 3.5 × 10<sup>14</sup> Jones and responsivity over 110 A W<sup>−1</sup>. This is the first work of high-gain all-polymer photodiodes, which provides a novel way for obtaining all-polymer photodiodes.
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41

Zhou, Dahua, Leyong Yu, Peng Zhu, Hongquan Zhao, Shuanglong Feng, and Jun Shen. "Lateral Structured Phototransistor Based on Mesoscopic Graphene/Perovskite Heterojunctions." Nanomaterials 11, no. 3 (2021): 641. http://dx.doi.org/10.3390/nano11030641.

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Due to their outstanding optical properties and superior charge carrier mobilities, organometal halide perovskites have been widely investigated in photodetection and solar cell areas. In perovskites photodetection devices, their high optical absorption and excellent quantum efficiency contribute to the responsivity, even the specific detectivity. In this work, we developed a lateral phototransistor based on mesoscopic graphene/perovskite heterojunctions. Graphene nanowall shows a porous structure, and the spaces between graphene nanowall are much appropriated for perovskite crystalline to mou
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42

Wei, Haitao, Shuai Hu, and Tongcheng Yu. "Flame aerosol deposition Y3Al5O12:Yb 3+ , Er 3+ nanoparticles on monolayer MoS2 for broadening near-infrared photoelectroresponse." Advances in Computer and Materials Scienc Research 1, no. 1 (2024): 283. http://dx.doi.org/10.70114/acmsr.2024.1.1.p283.

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Monolayer molybdenum disulfide (MoS2) is a two-dimensional material with a direct bandgap widely used in photoelectric detection. It exhibits excellent characteristics such as an ultra- high specific surface area, strong light interaction, and good carrier mobility. However, due to the bandgap limitation, monolayer MoS2 can only efficiently detect visible wavelengths less than 680 Combining lanthanide-doped upconversion nanoparticles with monolayer MoS2 to realize near- infrared (NIR) photodetection is a feasible strategy. Thus, Y3Al5O12:Yb 3+ , Er3+ up-conversion nanoparticles are deposited o
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43

Xing, Shen, Jonas Kublitski, Christian Hänisch, et al. "Photomultiplication‐Type Organic Photodetectors for Near‐Infrared Sensing with High and Bias‐Independent Specific Detectivity." Advanced Science 9, no. 7 (2022): 2105113. http://dx.doi.org/10.1002/advs.202105113.

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Abd, Ahmed N., Muhaj Talib Abdullah, Saad Khalid Rahi, and Nadir F. Habubi. "CdO/FTO Schottky photodetector with enhanced spectral responsivity and Specific detectivity prepared by electrolysis method." Journal of Physics: Conference Series 1660 (November 2020): 012047. http://dx.doi.org/10.1088/1742-6596/1660/1/012047.

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Xu, Qing, Xiangyong Zhao, Xiaobing Li, et al. "Novel electrode layout for relaxor single crystal pyroelectric detectors with enhanced responsivity and specific detectivity." Sensors and Actuators A: Physical 234 (October 2015): 82–86. http://dx.doi.org/10.1016/j.sna.2015.07.018.

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Luo, Jiarui, Wenbo Luo, Kaisheng Zhang, et al. "High specific detectivity infrared detector using crystal ion slicing transferred LiTaO3 single-crystal thin films." Sensors and Actuators A: Physical 300 (December 2019): 111650. http://dx.doi.org/10.1016/j.sna.2019.111650.

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47

Awayiz, Muntadher Talib, and Evan T. Salim. "Photo Voltaic Properties of Ag2O/ Si Heterojunction Device: Effect of Substrate Conductivity." Materials Science Forum 1002 (July 2020): 200–210. http://dx.doi.org/10.4028/www.scientific.net/msf.1002.200.

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The chemical bath deposition method was employed to prepare Ag2O films at specific preparation conditions. Silicon substrate with different conductivity was used to study their effect on the electrical and photovoltaic properties of the prepared devices. The current-voltage properties reveal that the ideality factor was (2.4 and 3.36) for psi and n-si substrate respectively. The obtained device efficiency is 0.35 while maximum detectivity was 0.3 cm.Hz1/2W-1.
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Zhong, Mianzeng, Haotong Meng, Zhihui Ren, et al. "Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection." Nanoscale 13, no. 23 (2021): 10579–86. http://dx.doi.org/10.1039/d1nr01715b.

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B-As<sub>0.084</sub>P<sub>0.916</sub> crystal-based FETs show 10<sup>5</sup>I<sub>on/off</sub> ratio, the highest charge-carrier mobility of 147 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and exhibit excellent photoresponse properties from 450 to 2200 nm with a responsivity of 37 A W<sup>−1</sup>, a specific detectivity of 7.18 × 10<sup>10</sup> Jones.
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Li, Ning, Yanlian Lei, Wing Kin Edward Chan, and Furong Zhu. "Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel." Journal of Materials Chemistry C 7, no. 16 (2019): 4808–16. http://dx.doi.org/10.1039/c8tc06229c.

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Broadband phototransistors (PTs) with a bi-layer MAPbI<sub>3</sub>/NIR light absorbing polymer channel have the advantages of the complementary absorption and high charge transport efficiency of the two materials. The broadband PTs possess simultaneously a specific detectivity (D*) of &gt;10<sup>9</sup> Jones over the wavelength range from UV to visible light and a high D* of &gt;10<sup>7</sup> Jones over the NIR light wavelength range.
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Bourgault, D., G. Paul, C. Latargez, et al. "Thermal detector based on a suspended polyimide membrane for infrared radiation applications." Applied Physics Letters 125, no. 2 (2024). http://dx.doi.org/10.1063/5.0213691.

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This Letter details a pioneering study on the design and nanofabrication process of a thermoelectric infrared radiation detector using a suspended polyimide membrane. The research includes a comprehensive analysis of thermoelectric doped Bi2Te3 thin films, comparing their expected performance regarding noise and specific detectivity with other infrared detectors, particularly those in the silicon sector. Experimental results and calculations shed light on responsivity and time constants. In the absence of absorption layers, specific detectivity values for visible and near infrared radiation ar
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