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Journal articles on the topic 'Spectral photosensitivity'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Abaszade, R. G., A. G. Mammadov, E. A. Khanmamedova, et al. "Photoconductivity of functionalized carbon nanotubes." Digest Journal of Nanomaterials and Biostructures 19, no. 2 (2024): 837–43. http://dx.doi.org/10.15251/djnb.2024.192.837.

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Investigation of carbon nanotubes is a modern trend due to their combination of unique physical, chemical, electrical, and optical properties. Carboxyl-functionalized carbon nanotubes (fCNTs) for investigation of photoelectrical properties were synthesized. The photo-sensitivity spectra of a carboxyl-functionalized CNT sample for voltage range from 1 to 9 V, and for the spectral range from 400 to 900 nm were investigated. The voltage equal to 1 V generated lower photosensitivity in the broadband wavelength range for visible to near-infrared. The most efficient photocurrents of fCNTs were recei

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Иванова, М. М., А. Н. Качемцев, А. Н. Михайлов та ін. "Влияние импульсного гамма-нейтронного облучения на фоточувствительность фотодиодов на базе Si с наноостровками GeSi и эпитаксиальными слоями Ge". Физика и техника полупроводников 52, № 6 (2018): 651. http://dx.doi.org/10.21883/ftp.2018.06.45931.8670.

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AbstractA comparative study of the effect of pulsed γ-neutron irradiation on the photosensitivity spectra of Si p – n photodiodes with active layers based on self-assembled GeSi nanoisland arrays and Ge epitaxial layers is performed. The irradiation of photodiodes with GeSi nanoislands is found to not lead to photosensitivity degradation in the spectral region of interband optical absorption in nanoislands (wavelength range of 1.1–1.7 μm). At the same time, a steady decrease in the intrinsic photosensitivity of Si and the photosensitivity of photodiodes based on Ge epitaxial layers with an inc

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3

Sapaev, I., U. Masharipova, and T. Sidikova. "Injection photodetectors operating in a wide spectral range." E3S Web of Conferences 452 (2023): 04003. http://dx.doi.org/10.1051/e3sconf/202345204003.

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New types of injection photodetectors are shown. The primary amplification of photocurrent in injection photodetectors is discussed. The photosensitivity of such photodetectors has been experimentally determined.

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Popov, V. S., V. P. Ponomarenko, D. V. Dymkin, et al. "PHOTOSENSITIVITY OF PbS COLLOIDAL QUANTUM DOTS BASED NANOSTRUCTURES WITH AN ENERGY BARRIER." Доклады Российской академии наук. Физика, технические науки 511, no. 1 (2023): 78–82. http://dx.doi.org/10.31857/s2686740023040120.

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A new architecture of photosensitive elements for the near (0.7–1.4 μm) and short-wavelength (1.4–3.0 μm) infrared regions of the spectrum based on hybrid nanostructures consisting of PbS colloidal quantum dots and functional layers of ZnO and AgNW silver nanowires is proposed. Small-sized (12 × 12 μm) photosensitive elements with an energy barrier at the contact between layers of n- and p-type CQDs have been studied. The current-voltage characteristics, spectral dependences of optical absorption and relative spectral photosensitivity of Si(λ)/Si(λmax) barrier structures at room temperature ha

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5

Sherchenkov, A. A. "Spectral photosensitivity of a-SiGe:H/c-Si heterostructures." Semiconductors 37, no. 7 (2003): 763–65. http://dx.doi.org/10.1134/1.1592846.

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6

Aliyev, K., and N. Azizli. "PHOTOELECTRIC PROPERTIES OF SOLID SOLUTIONS BASED ON (ZnS)1-x(Eu2S3)x." Scientific heritage, no. 154 (February 9, 2025): 8–10. https://doi.org/10.5281/zenodo.14839986.

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The study of photoelectric properties allowed us to make some generalizations and identify a number of patterns in measuring their basic physical properties. An increase in temperature leads to an increase in the photosensitivity of samples, to a significant expansion of the sensitivity band, while the long-wave edge shifts toward lower energies, but its steepness remains almost unchanged. As a result of studying the mechanism of photoconductivity of the studied samples, the short-wave and long-wave boundaries of the spectral curves of photoconductivity, the region of lengths of their maximum

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Otazhonov, S. M., R. N. Ergashev, K. A. Botirov, et al. "Influence of thickness and temperature on photoelectric properties of p-CdTe-nCdS and pCdTe-CdSe heterostructures." Journal of Physics: Conference Series 2388, no. 1 (2022): 012001. http://dx.doi.org/10.1088/1742-6596/2388/1/012001.

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Abstract In this paper, we study the photoelectric properties of pCdTe-nCdS and pCdTe-nCdSe-based film heterostructures. It is shown that the high value of the electron diffusion length in pCdTe slick (pellicle) is due to the presence of a built-in field in it. When studying the effect of temperature on the spectral characteristics, it was found that with increasing temperature, the maximum photosensitivity of the heterostructure shifts towards longer wavelengths of light. The shift in the photosensitivity maximum is explained by changes in the band gap of cadmium telluride. As shown, the accu

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8

Аруев, П. Н., Б. Я. Бер, А. Н. Горохов та ін. "Характеристики кремниевого лавинного фотодиода для ближнего ИК-диапазона". Письма в журнал технической физики 45, № 15 (2019): 40. http://dx.doi.org/10.21883/pjtf.2019.15.48086.17851.

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Sensitivity in 400 – 1150 nm spectral range, dark current and dynamic characteristics have been tested of a developed silicon avalanche photodiode with an active diameter of 1.5 mm. Developed Si APD possesses: photosensitivity 80-85 A/W in 900 - 1010 nm spectral range, 1.5 nA dark current, rise and fall time less than 2.5 ns with a bias voltage of 350 v.

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9

Fedorenko, A. V. "Spectral photosensitivity of diffused Ge-p–i–n photodiods." Технология и конструирование в электронной аппаратуре, no. 3-4 (2020): 17–23. http://dx.doi.org/10.15222/tkea2020.3-4.17.

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Laser rangefinders are widely used to measure distances for various civil and military purposes, as well as in rocket and space technology. The optical channel of such rangefinders uses high-speed p–i–n, or avalanche, photodiodes based on Si, Ge or InGaAs depending on the operating wavelength of the rangefinder in question. The paper describes a manufacturing process for high-speed Ge-p–i–n photodiodes for laser rangefinders using the diffusion method. The passivation layer is made of ZnSe, which is a new solution for this type of photodiodes. The existing theoretical models are used to study

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10

Guertin, S., and G. Kass-Simon. "Extraocular spectral photosensitivity in the tentacles of Hydra vulgaris." Comparative Biochemistry and Physiology Part A: Molecular & Integrative Physiology 184 (June 2015): 163–70. http://dx.doi.org/10.1016/j.cbpa.2015.02.016.

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11

Sprincean, Veaceslav, Liviu Leontie, Iuliana Caraman, et al. "Optical and Photosensitive Properties of Flexible n (p)–InSe/In2O3 Heterojunctions." Materials 15, no. 9 (2022): 3140. http://dx.doi.org/10.3390/ma15093140.

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In this work, optical, including photoluminescence and photosensitivity, characteristics of micrometer-sized flexible n (p)–InSe/In2O3 heterojunctions, obtained by heat treatment of single-crystalline InSe plates doped with (0.5 at.%) Cd (Sn), in a water-vapor- and oxygen-enriched atmosphere, are investigated. The Raman spectrum of In2O3 layers on an InSe:Sn substrate, in the wavelength range of 105–700 cm−1, contains the vibration band characteristic of the cubic (bcc-In2O3) phase. As revealed by EDX spectra, the In2O3 layer, ~2 μm thick, formed on InSe:Cd contains an ~18% excess of atomic ox

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12

Sprincean, Veaceslav, Liviu Leontie, Iuliana Caraman, et al. "Optical and Photosensitive Properties of Flexible n (p)–InSe/In2O3 Heterojunctions." Materials 15, no. 9 (2022): 3140. http://dx.doi.org/10.3390/ma15093140.

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In this work, optical, including photoluminescence and photosensitivity, characteristics of micrometer-sized flexible n (p)–InSe/In2O3 heterojunctions, obtained by heat treatment of single-crystalline InSe plates doped with (0.5 at.%) Cd (Sn), in a water-vapor- and oxygen-enriched atmosphere, are investigated. The Raman spectrum of In2O3 layers on an InSe:Sn substrate, in the wavelength range of 105–700 cm−1, contains the vibration band characteristic of the cubic (bcc-In2O3) phase. As revealed by EDX spectra, the In2O3 layer, ~2 μm thick, formed on InSe:Cd contains an ~18% excess of atomic ox

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13

Sandugash, Orazaliyeva, Kadirbayeva Gulim, and Chezhimbayeva Katipa. "Evaluation of the effectiveness of the effect of photosensitization on the spectral characteristics of the fiber Bragg grating." Eastern-European Journal of Enterprise Technologies 3, no. 5 (117) (2022): 6–14. https://doi.org/10.15587/1729-4061.2022.259033.

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Currently, fiber Bragg gratings obtained on the basis of photoinduced optical fibers doped with a high concentration of germanium oxide are used as highly sensitive sensors. However, it is worth noting a significant drawback – the manufacturing technology of optical fibers doped with germanium is expensive. When recording Bragg gratings in a standard telecommunication fiber, where the molar concentration of germanium in the fiber core is from 3 % to 5 %, interference occurs due to very low and insufficient light sensitivity. Thus, an important role is played by solving the prob

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14

Sarmasov, S. N., R. Sh Rahimov, and T. Sh Abdullayev. "THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS." EurasianUnionScientists 6, no. 8(77) (2020): 21–23. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.77.1001.

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The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

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15

Hwang, Insik, Jaehyun Kim, Minkyung Lee, et al. "Wide-spectral/dynamic-range skin-compatible phototransistors enabled by floated heterojunction structures with surface functionalized SWCNTs and amorphous oxide semiconductors." Nanoscale 9, no. 43 (2017): 16711–21. http://dx.doi.org/10.1039/c7nr05729f.

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16

Wengler, M. C., B. Schreder, E. Soergel, J. Zimmer, and K. Buse. "Spectral photosensitivity and holographic performance of europium-doped fluorophosphate glass." Applied Physics B 79, no. 5 (2004): 597–601. http://dx.doi.org/10.1007/s00340-004-1566-7.

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17

Hawryshyn, Craig W., Margaret G. Arnold, Duane J. Chaisson, and Patricia C. Martin. "The ontogeny of ultraviolet photosensitivity in rainbow trout (Salmo gairdneri)." Visual Neuroscience 2, no. 3 (1989): 247–54. http://dx.doi.org/10.1017/s0952523800001164.

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AbstractThe present study examines the changes in ultraviolet (UV) photosensitivity that occur during the growth of rainbow trout (Salmo gairdneri). A comparison of the ocular media transmission of small (n = 3) and large (n = 3) trout eyes did not reveal large changes in the transmission of UV radiation through the eye. We used the heart-rate conditioning technique to measure spectral sensitivity in immobilized trout. Four trout, each weighing less than 30 g, exhibited a UV-sensitivity peak at 360 nm while four additional trout weighing more than 60 g each exhibited no evidence of UV sensitiv

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18

Neroev, V. V., E. P. Tarutta, R. R. Khubieva, and A. V. Apaev. "Functional and structural features of the retina, fixation characteristics and their correlations with visual acuity in nystagmus and amblyopia of various origins." Russian Ophthalmological Journal 15, no. 1 (2022): 32–38. http://dx.doi.org/10.21516/2072-0076-2022-15-1-32-38.

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Purpose. To study the parameters of visual fixation, photosensitivity of the retina in the macular region, thickness of the central region of the retina and the choroid and their relationship with the best corrected visual acuity (BCVA) and refraction in nystagmus and various types of amblyopia.Material and methods. 65 patients aged 5 to 44 (mean age 12.61 ± 7.12 years) were divided into 6 groups depending on the type of amblyopia and associated conditions. The control group was composed of subjects of the same age range without eye pathologies. The retinal photosensitivity and fixation parame

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19

Abdulkhaev, O. A., D. M. Yodgorova, A. V. Karimov, A. A. Yakubov, and Sh M. Kuliyev. "Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure." Технология и конструирование в электронной аппаратуре, no. 4 (2018): 21–27. http://dx.doi.org/10.15222/tkea2018.4.21.

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The work is devoted to the study of physical features of electronic processes taking place in the space charge region and in the base region of arsenide-gallium three-barrier photodiode structures with the effect of locking two adjacent transitions. The structures have high photosensitivity in the «impurity» region of the spectrum at both inclusion polarities. The obtained results suggest that such structures can be used in optical communication systems. The study allowed showing that a three-barrier photodiode m1—p-GaAs—n-GaAs—m2-structure with a high quantum efficiency can exceed 8 times the

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20

Blinov, L. M., V. V. Lazarev, S. G. Yudin, and S. P. Palto. "Spectral photosensitivity of an organic semiconductor in a submicron metal grating." Journal of Experimental and Theoretical Physics 122, no. 2 (2016): 361–67. http://dx.doi.org/10.1134/s1063776116010131.

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21

Лунин, Л. С., М. Л. Лунина, А. С. Пащенко, Д. Л. Алфимова та О. С. Пащенко. "Гетероструктуры Ga-=SUB=-x-=/SUB=-In-=SUB=-1-x-=/SUB=-As-=SUB=-y-=/SUB=-Bi-=SUB=-z-=/SUB=-Sb-=SUB=-1-y-z-=/SUB=-/InSb для фотоприемных устройств (λ = 6-12 μm)". Письма в журнал технической физики 45, № 16 (2019): 27. http://dx.doi.org/10.21883/pjtf.2019.16.48152.17863.

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GaxIn1-xAsyBizSb1-y-z/InSb isoparametric heterostructures for photodetectors operating in the wavelength band of 6-12 μm are obtained by the method of zone recrystallization in temperature gradient. Bismuth introduction into the GaInAsSb solid solution makes decrising the band gap Eg possible and expanding the spectral range to 12 μm and shifting the photosensitivity maximum to the long wavelength region, accordingly.

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22

Hawryshyn, Craig W., B. Ralph Chou, and Ross D. Beauchamp. "Ultraviolet transmission by the ocular media of goldfish: implications for ultraviolet photosensitivity in fishes." Canadian Journal of Zoology 63, no. 6 (1985): 1244–51. http://dx.doi.org/10.1139/z85-186.

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Spectral transmittance of goldfish (n = 10) ocular media was measured in the 320- to 750-nm range with a spectrophotometer modified to eliminate problems associated with chromatic aberration and beam scattering. Absolute transmittance in the visible range was 0.8 at 400 nm and 0.95 at 750 nm. Transmittance below 400 nm dropped off to 0.3 at 340 nm and exhibited high variability between individuals. Linear regression analysis showed that ultraviolet (UV) transmittance was not systematically related to age, body weight, standard length, or ocular diameter of fish. Low UV transmittance of the ocu

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23

Mil’ner, A. A., and N. F. Kharchenko. "Photosensitivity of La2CuO4 single crystal surface. Optical polarization studies." Soviet Journal of Low Temperature Physics 16, no. 5 (1990): 389–91. https://doi.org/10.1063/10.0032612.

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Photoinduced variation of the linear optical anisotropy is found experimentally during a study of the polarized light reflection from a La2CuO4 single crystal. The effect is detected when the sample is exposed to unpolarized light of 10–5 W/cm2 in the spectral region from 350 to 750 nm. At T ∼ 10 K a new state of the illuminated surface is achieved for about 103 and persists in the dark without any changes for t ≳ 5 × 104 s. Light-induced variations of the reflection anisotropy are observed at T ≤ 80 K only. After heating above this temperature the sample properties are recovered.

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Matiyev, A. K., R. T. Uspazhiev, T. A. Matieva, et al. "Electrophysical Properties of <i>N</i>-Cuinse Based Heterostructures." Key Engineering Materials 909 (February 4, 2022): 149–55. http://dx.doi.org/10.4028/p-0x60l7.

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By the method of thermal oxidation of n-type CuInSe2 crystals, n - n+ structures with a maximum absolute current photosensitivity of up to 10 mA / W were obtained at low rectification and no-load photovoltage. The used modes of thermal oxidation led to the formation of n-type layers on the surface of the n-CuInSe2 plates, the resistivity of which is 2-2.5 times higher concerning the initial substance. Measurements of the stationary current-voltage characteristics have shown that the structures obtained have a slight rectification K. All the structures obtained exhibit photosensitivity, which d

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Melebaev, D., М. Annaberdieva, М. Kotyrov, and А. Tashlieva. "OPTICAL PROPERTIES OF GALLIUM PHOSPHIDE AND SCHOTTKY PHOTODIODES BASED ON IT." National Association of Scientists 2, no. 65 (2021): 35–51. http://dx.doi.org/10.31618/nas.2413-5291.2021.2.65.393.

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In this paper, the optical and luminescent properties of gallium phosphide (GaP) and spectral characteristics of GaP p-n, m-s structures for studying the energy-band structure of GaP were considered. Based on literature data, the absorption coefficient dependence was constructed near and above the fundamental absorption edge of the photon energy hν=2-6 eV in GaP (300 K) to discuss the obtained experimental results. The results of the photosensitivity spectra study of Au-n-GaP, Au-p-GaP Schottky barriers are presented, which were produced by the chemical deposition of Au nanoscale (~15 nm

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26

Sabirova, I. H., I. I. Zainutdinova, L. N. Sabirova, and E. R. Kokoreva. "Retinal morphometric parameters of epiretinal membrane in the early period of surgical treatment." Modern technologies in ophtalmology, no. 3 (July 15, 2021): 147–49. http://dx.doi.org/10.25276/2312-4911-2021-3-147-149.

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The analysis of the morphometric of the retina in patients with epiretinalmembrane was carried out using spectral coherent optical tomography and determination of retinal photosensitivity in the early postoperative period. A decrease in retinal edema was revealed due to a decrease in the thickness of the inner layers of the neuroepithelium in patients with vitreoretinal pathology after surgical treatment. Keywords: epiretinal membrane, morphometric parameters of the retina, vitrectomy, membranopilling.

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Madatov, Rahim Salim, A. S. Alekperov, F. N. Nurmammadova, Narmin A. Ismayilova, and Sakin H. Jabarov. "Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties." East European Journal of Physics, no. 1 (March 5, 2024): 322–26. http://dx.doi.org/10.26565/2312-4334-2024-1-29.

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The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in thermal annealing structures at T = 200 °C during t = 3 hours occurs due to the decrease in the density of states of local levels located near the Fermi level in the amorphous layer. The mechanism of photosensitivity in an isotype heterostructures was analyzed and it was found that the photosensitivity o

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Nesheva, D., Z. Aneva, M. J. Scepanovic, Z. Levi, I. Iordanova, and Z. V. Popovic. "Crystal structure and spectral photosensitivity of thermally evaporated ZnxCd1−xSe thin films." Journal of Physics D: Applied Physics 44, no. 41 (2011): 415305. http://dx.doi.org/10.1088/0022-3727/44/41/415305.

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Ulaganathan, Rajesh Kumar, Yi-Ying Lu, Chia-Jung Kuo, et al. "High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors." Nanoscale 8, no. 4 (2016): 2284–92. http://dx.doi.org/10.1039/c5nr05988g.

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Kakimoto, Noriyuki, and Takahiro Numai. "Control of Spectral Photosensitivity in Stacked Color Sensors: Proposal and Theoretical Analysis." Japanese Journal of Applied Physics 47, no. 6 (2008): 4540–46. http://dx.doi.org/10.1143/jjap.47.4540.

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Bryknar, Z., M. Procio, and č. Barta. "Photosensitivity of mercurous chloride single crystals in 280–400 nm spectral region." Czechoslovak Journal of Physics 37, no. 11 (1987): 1301–10. http://dx.doi.org/10.1007/bf01599680.

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Levina, S., V. Emelyanov, M. Mintairov, M. Nakhimovich, and M. Shvarts. "Multijunction solar cell spectral response determination at radiation damage study." Journal of Physics: Conference Series 2103, no. 1 (2021): 012180. http://dx.doi.org/10.1088/1742-6596/2103/1/012180.

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Abstract This paper discusses multijunction solar cells with optically coupled p-n junctions under radiation exposure photosensitivity spectral response study. It is shown that if the measurement technique does not consider the luminescent coupling and does not track the optical coupling degradation, then instead of a decrease (which is a natural response of a photoconverter to radiation damage), an abnormal increase in the narrow-bandgap photoresponse (receiving luminescent radiation) subcell due to radiation damage can be observed. Accordingly, with an increase in the irradiation dose, an in

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Guo, Li-Ying, Ying Li, Yao Zhang, et al. "Extended visible photosensitivity of carboxyethyltin functionalized polyoxometalates with common organic dyes enabling enhanced photoelectric performance." RSC Advances 7, no. 33 (2017): 20685–93. http://dx.doi.org/10.1039/c7ra02353g.

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Lazarev, V. V., A. R. Geyvandov, and S. P. Palto. "Spektral'nye osobennosti fotoelektricheskogo effekta v smesevoy donorno-aktseptornoy kompozitsii ftalotsianina tsinka i fullerena ZnPc: C70." Журнал экспериментальной и теоретической физики 163, no. 2 (2023): 153–61. http://dx.doi.org/10.31857/s0044451023020025.

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Spectral singularities of the ampere–watt sensitivity of photoelectric structures consisting of a transparent indium–tin oxide electrode, a photosensitive organic layer, and an aluminum electrode have been studied. The structures have been formed on a quartz glass substrate. The photosensitive layer has been vacuum-evaporated either from zinc phthalocyanine ZnPc (exhibiting donor properties) and C70 fullerene (acceptor) organic precursors or from a ZnPc:Cr70 donor–acceptor blend. Using computer simulation, the structure of absorption bands has been determined in a wide spectral range for all t

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Saidov, A. S., Sh N. Usmonov, and U. Kh Rakhmonov. "Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures." Applied Solar Energy 46, no. 3 (2010): 209–11. http://dx.doi.org/10.3103/s0003701x10030114.

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Davletshin, R. V., P. S. Lazarev, and A. V. Nikonov. "Analysis of the spatial distribution of the spectral photosensitivity of focal plane arrays." Journal of Communications Technology and Electronics 62, no. 3 (2017): 317–20. http://dx.doi.org/10.1134/s1064226917030081.

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Калинина, Е. В., Г. Н. Виолина, И. П. Никитина, М. A. Яговкина, Е. В. Иванова та В. В. Забродский. "Облучение протонами 4H-SiC фотоприемников с барьером Шоттки". Физика и техника полупроводников 53, № 6 (2019): 856. http://dx.doi.org/10.21883/ftp.2019.06.47742.9072.

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AbstractFor the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4 H -SiC epitaxial layers are carried out by the X-ray and optical methods before and after irradiation with 15-MeV protons with fluences in the range of (1–4) × 10^12 cm^–2. When increasing the fluence of proton irradiation, the formation of localized regions with negative deformation is observed along with the unperturbed silicon-carbide matrix. Agreement between the X-ray and optical studies is obtained, which makes it possible to explain the features of the

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Abd, Ahmed N., Wasna'a M. Abdulridha, and Mohammed Odda Dawood. "Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode." International Letters of Chemistry, Physics and Astronomy 63 (January 2016): 67–76. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.63.67.

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In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant

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Abd, Ahmed N., Wasnaa Mohammed Abdulridha, and Mohammed Odda Dawood. "Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode." International Letters of Chemistry, Physics and Astronomy 63 (January 4, 2016): 67–76. http://dx.doi.org/10.56431/p-xhu97d.

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In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant

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LEPADATU, Ana-Maria, Ionel STAVARACHE, Catalin PALADE, et al. "FROM Si NANOWIRES TO Ge NANOCRYSTALS FOR VIS-NIR-SWIR SENSORS AND NON-VOLATILE MEMORIES: A REVIEW." Annals of the Academy of Romanian Scientists Series on Physics and Chemistry 7, no. 1 (2022): 53–87. http://dx.doi.org/10.56082/annalsarsciphyschem.2022.1.53.

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"Nanocrystalline Si and Ge are ofhigh interestfor integrated Si photonics related to light emission, opticul sensors, photodetectors, solar energy harvesting and conversion devices, and also forfloating gate non-volatile memories (NVMs). In this review, we have focused on nanocrystalline porous Si (nc-PS) with extension to Si nanodots, and Ge nanocrystals (NCs)Zquantum dots (QDs)/nanoparticles (NPs) embedded in oxides (SiCh, TiCE, HfCh, AI2O3). The great asset ofnc-PS is its intense photoluminescence in VIS at room temperature (RT), while Ge NCs/NPs embedded in oxides show high photosensitivit

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Tran, Thanh Thao, Ha Trang Nguyen, Ankush Sharma, Young-Bin Cho, Manjeet Kumar, and Ju-Hyung Yun. "Expanding the Spectral Responsivity of Photodetectors via the Integration of CdSe/ZnS Quantum Dots and MEH−PPV Polymer Composite." Polymers 16, no. 16 (2024): 2371. http://dx.doi.org/10.3390/polym16162371.

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This study investigates the energy transfer mechanism between the organic polymer poly(2-methoxy-5(2’-ethyl)heroxyphenylenevinylene) (MEH−PPV) and CdSe/ZnS core-shell quantum dots (CdSe/ZnS CSQDs). Additionally, a hybrid ZnO-based photodetector (PD) is fabricated using the composite of MEH−PPV and CdSe/ZnS CSQDs, aiming to gain deeper insights. The combination of MEH−PPV and CdSe/ZnS CSQDs facilitates a broad spectral response in PDs, spanning from the ultraviolet (UV) to the visible range. In particular, PDs with QDs in the composite demonstrate notably excellent photosensitivity to both ultr

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Pevtsov, D. N., D. V. Demkin, A. V. Katsaba, and A. V. Gadomska. "Flame Detectors Based on Semiconductor Nanocrystals." Химия высоких энергий 57, no. 4 (2023): 290–97. http://dx.doi.org/10.31857/s0023119323040101.

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The possibility of using semiconductor nanocrystals in photodetectors for optical detection of open flame has been explored. The spectral range boundaries of response of flame detectors have been concretized. In accordance with this, colloidal lead sulfide nanocrystals absorbing in the range of 1–1.5 μm have been synthesized. Photoresistors with different ligand compositions have been made from these particles. For the obtained samples, the current–voltage characteristics were measured and the photosensitivity and specificdetectivity parameters were calculated. A theoretical estimate of the fl

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Dungan, Sarah Z., and Belinda S. W. Chang. "Epistatic interactions influence terrestrial–marine functional shifts in cetacean rhodopsin." Proceedings of the Royal Society B: Biological Sciences 284, no. 1850 (2017): 20162743. http://dx.doi.org/10.1098/rspb.2016.2743.

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Like many aquatic vertebrates, whales have blue-shifting spectral tuning substitutions in the dim-light visual pigment, rhodopsin, that are thought to increase photosensitivity in underwater environments. We have discovered that known spectral tuning substitutions also have surprising epistatic effects on another function of rhodopsin, the kinetic rates associated with light-activated intermediates. By using absorbance spectroscopy and fluorescence-based retinal release assays on heterologously expressed rhodopsin, we assessed both spectral and kinetic differences between cetaceans (killer wha

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Saad, Anis M., Olga V. Zinchuk, N. A. Drozdov, A. K. Fedotov, and A. V. Mazanik. "Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers." Solid State Phenomena 131-133 (October 2007): 333–38. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.333.

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The main goal of this work is to investigate the influence of low-temperature argon ionbeam treatment on the electric and structural properties of a near-surface region of the standard commercial p-type Cz Si wafers, and to compare the effects of Ar+ and H+ ion-beam treatment. The measurements of thermo-EMF have shown that both Ar+ and H+ ion-beam treatment with the ion energy 200 eV and current density 0.15 mA/cm2 at a temperature of 30 oC during 30 min leads to the p-to-n −type overcompensation of the near-surface layer of silicon wafers. The measurements of photovoltage spectra have shown t

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Vasilevich, V. P., та M. Y. Zbyshinskaya. "Bifacial Photovоltaic Sensor for Insolation Energy Resource Monitoring". Devices and Methods of Measurements 15, № 2 (2024): 95–103. http://dx.doi.org/10.21122/2220-9506-2024-15-2-95-103.

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Accurate and reliable measurements of the total solar radiation flux make it possible to evaluate the efficiency of using stand-alone photovaltaic systems in various meteorological conditions. These measurements allow more accurately predict in time the energy production volume, accumulator and capacitive storage devices parameters and the payback period. Research purpose was to study the possibility of creating a photoelectric sensor and a method of uninterrupted measurement based on this sensor which allows to measure total solar radiation flux including its direct, diffused and reflected co

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Donchev, Vesselin, and Malina Milanova. "Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells." Coatings 13, no. 12 (2023): 2052. http://dx.doi.org/10.3390/coatings13122052.

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In this paper, we demonstrate the potential of the contactless surface photovoltage (SPV) method for fast and reliable control of GaAs-based solar cells directly on epitaxial heterostructures before metallization and photolithography processes. The magnitude of the SPV corresponds to the generated photovoltage in the photoactive region, which is related to the open circuit voltage of the cell. The focus of this investigation is the potential of dilute nitride compounds grown by low-temperature liquid-phase epitaxy (LPE) for application as intermediate cells in multijunction solar cells. First,

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Usmonov, Sh N., A. S. Saidov, M. S. Saidov, and K. A. Amonov. "Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution." Applied Solar Energy 45, no. 1 (2009): 7–8. http://dx.doi.org/10.3103/s0003701x09010022.

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Nadtoka, Oksana, and Yaroslav Vertsimakha. "The influence of matrix material on the spectral dependence of the photosensitivity of polymer nanocomposites." Molecular Crystals and Liquid Crystals 642, no. 1 (2017): 63–73. http://dx.doi.org/10.1080/15421406.2016.1255047.

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Yodgorova, D. M. "Spectral photosensitivity of the m-n 0-n structure on the basis of epitaxial layers." Semiconductor physics, quantum electronics and optoelectronics 11, no. 1 (2008): 26–28. http://dx.doi.org/10.15407/spqeo11.01.026.

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Kostiukevych, Oleksandr M., Valeriy A. Skryshevsky, Vasyl V. Lendiel, Yuriy G. Shulimov, Anton I. Manilov, and Oleksandr Ye Lushkin. "Memristor Effect in Sandwich-Type Ni-TiO_x-p/Si-Ni Heterojunction." Journal of Nano Research 39 (February 2016): 114–20. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.114.

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I-V, C-V characteristics and current change kinetics of the Ni-TiOx-p/Si-Ni heterojunction were studied under different speeds of voltage sweep, in darkness and under illumination of various spectral regions. It was found that Ni-TiOx-p/Si-Ni heterojunction shows pronounced hysteretic behavior and can act as memristor cell. Results of studies of photosensitivity and current kinetics under abrupt changes of applied voltage and illumination reveal considerable role of surface states recharging in TiOx oxide layer or at TiOx-p/Si interface in the switching effects.The studied Ni-TiOx-p/Si-Ni hete

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