Relevant bibliographies by topics / Spectrometrie sims

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  2. Dissertations / Theses
  3. Books
  4. Book chapters
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Academic literature on the topic 'Spectrometrie sims'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Spectrometrie sims"

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Linton, Richard W. "Direct Imaging of Trace Elements, Isotopes, and Molecules Using Mass Spectrometry." Microscopy and Microanalysis 4, S2 (July 1998): 124–25. http://dx.doi.org/10.1017/s1431927600020742.

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Secondary ion mass spectrometry (SIMS) is based upon the energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film microanalysis. The scope of the technique includes a diversity of analysis modes including:1.Elemental Depth Profiling (dynamic SIMS),2.Laterally Resolved Imaging (ion microprobe or ion microscope analysis),3.Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),4.Molecular Monolayer Analysis and Imaging (static SIMS),5.Sputtered Neutral Mass Spectrometry (post-ionization).Much of the early work in dynamic SIMS centered on depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.
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Linton, Richard W. "Secondary ion mass spectroscopy in the biological and materials sciences." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 498–99. http://dx.doi.org/10.1017/s0424820100148320.

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Secondary ion mass spectrometry (SIMS) is based upon energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film chemical analysis. In recent years, the scope of the technique has broadened to include a variety of analysis modes including:1.Elemental Depth Profiling (dynamic SIMS),2.Laterally Resolved Imaging (ion microprobe or ion microscope analysis),3.Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),4.Molecular Monolayer Analysis (static SIMS),5.Sputtered Neutral Mass Spectrometry (post-ionization).Much of the early work in dynamic SIMS centered on the development of depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.
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Virag, A., G. Friedbacher, M. Grasserbauer, H. M. Ortner, and P. Wilhartitz. "Multielement ultratrace analysis of molybdenum with high performance secondary ion mass spectrometry." Journal of Materials Research 3, no. 4 (August 1988): 694–704. http://dx.doi.org/10.1557/jmr.1988.0694.

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Electron beam melting has been used to obtain ultrapure refractory metals that are gaining importance in metal oxide semiconductor-very large scale integration (MOS-VLSI) processing technology, fusion reactor technology, or as superconducting materials. Although the technology of electron beam melting is well established in the field of production of very clean refractory metals, little is known about the limitations of the method because the impurity level of the final products is frequently below the detection power of common methods for trace analysis. Characterization of these materials can be accomplished primarily by in situ methods like neutron activation analysis and mass spectrometric methods [glow discharge mass spectrometry (GDMS), secondary ion mass spectrometry (SIMS)]. A suitable method for quantitative multielement ultratrace bulk analysis of molybdenum with SIMS has been developed. Detection limits of the analyzed elements from 10−7g/gdown to 10−12g/g have been found. Additional information about the distribution of the trace elements has been accumulated.
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Meeker, G. P., J. E. Taggart, and S. A. Wilson. "A Basalt Glass Standard for Multiple Micro Analytical Techniques." Microscopy and Microanalysis 4, S2 (July 1998): 240–41. http://dx.doi.org/10.1017/s1431927600021322.

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Well-characterized calibration standards for microanalytical applications are difficult to obtain, often poorly characterized, and often not homogeneous from piece to piece. In addition, many microanalytical standards are available only in very small quantities making inter-laboratory comparisons difficult. To further complicate the situation, destructive microbeam techniques such as secondary ion mass spectrometry (SIMS) and laser source mass spectrometries (LSMS) require larger quantities of material than nondestructive techniques.The U.S. Geological Survey, Geologic Division is in the process of evaluating ways to produce relatively large quantities of well-characterized standards. We are interested in producing standards of geological materials appropriate for multiple microbeam techniques including electron probe microanalysis (EPMA), SIMS and LSMS. The microbeam standards are produced by melting powders of standards of naturally occurring materials that the USGS has previously provided as bulk analytical standards.
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HIRAOKA, Kenzo. "Fundamentals of Mass Spectrometry -Secondary Ion Mass Spectrometry (SIMS), Cluster SIMS, and Electrospray Droplet Impact SIMS-." Journal of the Mass Spectrometry Society of Japan 58, no. 5 (2010): 175–84. http://dx.doi.org/10.5702/massspec.58.175.

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Katz, W., and J. G. Newman. "Fundamentals of Secondary Ion Mass Spectrometry." MRS Bulletin 12, no. 6 (September 1987): 40–47. http://dx.doi.org/10.1557/s088376940006721x.

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AbstractThis article presents an overview of our current understanding of the fundamental factors underlying Secondary Ion Mass Spectrometry (SIMS). Included is a discussion of the sputtering process and possible mechanisms which produce ejected ions. Presently available instrumentation for SIMS analysis is discussed and some examples of SIMS analysis are also given.
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Phinney, Douglas. "Quantitative Analysis of Microstructures by Secondary Ion Mass Spectrometry." Microscopy and Microanalysis 12, no. 4 (July 14, 2006): 352–55. http://dx.doi.org/10.1017/s1431927606060399.

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The focus of this review is on trace-element quantitation of microstructures in solids. This review is aimed at the nonspecialist who wants to know how secondary ion mass spectrometry (SIMS) quantitation is achieved. Despite 35 years of SIMS research and applications, SIMS quantitation remains a fundamentally empirical enterprise and is based on standards. The most used standards are “bulk standards”—solids with a homogeneous distribution of a trace element—and ion-implanted solids. The SIMS systematics of bulk standards and ion-implanted solids are reviewed.
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Kudo, Masahiro, and Susumu Nagayama. "Secondary Ion Mass Spectrometry (SIMS)." Zairyo-to-Kankyo 42, no. 5 (1993): 312–21. http://dx.doi.org/10.3323/jcorr1991.42.312.

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Hayashi, S., and K. Yanagihara. "Characterization Of SiO2/Si Interface Using Secondary Ion Mass Spectrometry(Sims) And Laser Post-Ionization Sputtered Neutral Mass Spectrometry(Snms)." Microscopy and Microanalysis 5, S2 (August 1999): 124–25. http://dx.doi.org/10.1017/s1431927600013945.

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SIMS has inherent difficulties with quantification because of the so called “matrix effect”. Many factors contribute to the matrix effect, e.g. differing concentration of oxygen, sputtering rate differences in the hetero-layers, etc. In the case of MOS(metal-oxide-semiconductor) structures, the oxide layer gives rise to a large matrix effect. It is thus very difficult to use SIMS to evaluate the relationship between the electrical properties of the LSI devices and the impurity profiles present in such systems.So we have been studying laser post-ionization SNMS, which consists of TOF-SIMS apparatus and excimer laser, in order to quantify the impurity profiles around SiO2/Si interface. Depth profiles of implanted Cu with 1×1015 atoms/cm2 in SiO2(100 nm)/Si system taken by Monte-Carlo simulation ,SIMS and laser post-ionization SNMS are shown in Fig.l. In this implantation condition the Cu+:Cu2+:Cu3+ percentage ratios of the charge distributions were 44:42:14. Fig. 1(a) shows the theoretical depth profiles expetted from this implantation condition by Monte-Cairo simulation.
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Portavoce, Alain, Khalid Hoummada, and Lee Chow. "Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements." Microscopy and Microanalysis 25, no. 2 (January 30, 2019): 517–23. http://dx.doi.org/10.1017/s1431927618015623.

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AbstractFor a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.
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Dissertations / Theses on the topic "Spectrometrie sims"

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Lu, Thanh-Chi. "Structure superficielle des poudres de superalliages base nickel et mécanismes intervenant au cours de la densification." Paris, ENMP, 1987. http://www.theses.fr/1987ENMP0074.

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Role de la structure des surfaces de poudre avant la compaction isostatique a chaud et son evolution au cours de la consolidation. Influence des caracteristiques morphologiques et microstructurales sur la cinetique de consolidation et sur le comportement mecanique des materiaux compactes
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Dezillie, Britta. "Étude de la tenue aux radiations de détecteurs de particules en silicium épitaxial pour leurs utilisaitons au LHC du CERN." Université Joseph Fourier (Grenoble ; 1971-2015), 1997. http://www.theses.fr/1997GRE10146.

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Dans les experiences futures dans le lhc de cern on veut utiliser des detecteurs de silicium de haute precision. Le composent hadronique influence le temps de vie des detecteurs. La tenue aux irradiations du silicium peut etre amelioree par l'etude des defauts. Cette etude implique l'addition des impuretes au silicium afin de former des centres de defauts qui sont actives d'une maniere electrique. Ceux ci controlent les parametres macroscopiques des echantillons. Les ingredients principales a examiner sont l'oxygene et le carbone parce qu'ils se comportent comme consommateurs des vacances et des interstitials. Un premier essai a introduire du ge dans le silicium a ete realise. Du materiel epitaxiale du type n de macom (us) qui contient dix fois plus d'oxygene que le float-zone (fz), montre une amelioration d'un facteur 2 a l'egard du fz. Les impuretes initiales au sein du materiel ont ete mesurees par sims et spectrometrie infrarouge (ir). Les etudes d'irradiations des detecteurs epitaxiales du type n et p avec une epaisseur de 200 m, produits par itme (pologne) avec differentes vitesses de croissance, sont reportees dans ce travail. Une comparaison de differents procedes comme l'implantation par ionisation et mesa a ete faite. La tenue aux irradiations des detecteurs de silicium epitaxials avec des resistivites initiales de 25 ohm cm a 10 kohm cm a ete comparee avec du fz standard. Les resultats sont presentes en terme de la variation du courant de fuite, la concentration de dopage effectif et la collection de charge en fonction de la fluence et le temps apres des irradiations proton en neutron jusqu'une fluence de 4. 5 10#1#4 p/cm#2.
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BORDES, NICOLE. "Etude du dosage d'elements traces dans inp par activation avec des particules chargees; comparaison avec d'autres methodes de caracterisation." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0035.

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Le phosphure d'indium (inp) est un materiau semiconducteur interessant pour ses proprietes electriques dans le domaine de la microelectronique et de l'optoelectronique. Dans le but de maitriser son elaboration et de mieux comprendre ses proprietes, il est necessaire de determiner la concentration des elements traces ou des dopants presents dans le materiau. Les methodes nucleaires d'activation par particules chargees sont actuellement parmi les plus sensibles pour l'analyse d'impuretes dans les materiaux, et surtout elles sont quantitatives. Les possibilites analytiques offertes par des protons de haute energie (superieure a 20 mev) ont ete etudiees et appliquees au dosage du chrome, cuivre, zinc et fer dans inp et in. Les sensibilites obtenues sont comprises entre 10**(13) et 8. 10**(13) a nontcm**(3). La presence de quelques impuretes legeres a egalement ete recherchee dans inp. Oxygene et carbone ont ete doses a l'aide de tritons de 6 mev et de deutons de 8 mev respectivement, avec une sensibilite de 4. 10**(13) a nontcm**(3) et 2. 10**(14) a nontcm**(3). Les protons de 13 mev ont permis le dosage du soufre dans l'indium avec une limite de detection de 2. 10**(15) a nontcm**(3). Le silicium a ete dose au moyen de tritons de 3 mev : une limite de quelques 10**(16) a nontcm**(3) a ete obtenue. Des comparaisons avec d'autres methodes de caracterisation telles que sims, ssms ont ete faites. Nous avons ensuite etudie d'une part la repartition de ces impuretes dans des lingots prepares par la methode czochralski sous encapsulant liquide (lec) et d'autre part suivi le transfert de ces impuretes au cours de la cristallogenese. Nous presentons enfin les caracteristiques electriques et cristallines des lingots d'inp etudies et nous avons essaye de les relier a la presence de ces elements
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Li, Zhen. "Characterization of surface and layered films with cluster secondary ion mass spectrometry." Texas A&M University, 2007. http://hdl.handle.net/1969.1/85794.

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Cluster secondary ion mass spectrometry (SIMS) analyses of layer-by-layer thin films were performed to investigate the depth/volume of SI emission and accuracy of the SI signal. The thin-layered samples were assembled by alternate adsorption of polyethylenimine (PEI), polystyrene sulfonate (PSS), polydiallyldimethylammonium chloride (PDDA) and clay nanoparticles. The films have controlled 3-D structure to test the depth of secondary ion (SI) emission and evaluate planar homogeneity. The SI emission depth is ~ 6-9 nm with 136 keV Au400 4+ (340 eV/atom) and 26 keV C60 + (433 eV/atom) projectile impacts. The diameter of the SI emission area is ~ 15 nm by assuming a semispherical emission volume. The SI yields oscillate with the alternation of the compositions of the topmost layers, which was observed with small cluster projectiles (CsICs+ and Au3 +) as well as with the large cluster projectiles (C60 + and Au400 4+). The SI signals of C- and CH- are enhanced in the presence of metal atoms in the expanding plume. Recoiled C60 projectile fragments (m/z=12, 13, 36) are observed in the SI mass spectra. Caution must be taken when monitoring the yields of such carbon cluster ions from organic surfaces because their yields don't reflect the true surface concentration. The Au400 4+ projectile impacts produce abundant co-emission. The correlation coefficient between the co-emitted SIs can be used to evaluate the planar homogeneity. The results show that the PSS layer is more uniform than the clay layers. The effect of alkali metal ion implantation on the nature and abundance of SI emission was investigated on Cs+ or Na+ implanted glycine samples. The alkali metal implantation induces surface damage and decreases the glycine molecular ion yields. Glycine molecular ions and fragment ions (CN-, CNO-) are emitted from different depths and locations of the emission volume. The same implanted glycine sample analyzed with different cluster projectiles (Au400 4+ and C60 +) shows different trends in the yields of molecular and fragment ions, which suggest a different mechanism of SI emission with different projectile impacts. The Na+ beam induces more surface damage compared with the Cs+ at equal impact energy.
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Swinford, Richard William. "An AFM-SIMS Nano Tomography Acquisition System." PDXScholar, 2017. https://pdxscholar.library.pdx.edu/open_access_etds/3485.

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An instrument, adding the capability to measure 3D volumetric chemical composition, has been constructed by me as a member of the Sánchez Nano Laboratory. The laboratory's in situ atomic force microscope (AFM) and secondary ion mass spectrometry systems (SIMS) are functional and integrated as one instrument. The SIMS utilizes a Ga focused ion beam (FIB) combined with a quadrupole mass analyzer. The AFM is comprised of a 6-axis stage, three coarse axes and three fine. The coarse stage is used for placing the AFM tip anywhere inside a (13x13x5 mm3) (xyz) volume. Thus the tip can be moved in and out of the FIB processing region with ease. The planned range for the Z-axis piezo was 60 µm, but was reduced after it was damaged from arc events. The repaired Z-axis piezo is now operated at a smaller nominal range of 18 µm (16.7 µm after pre-loading), still quite respectable for an AFM. The noise floor of the AFM is approximately 0.4 nm Rq. The voxel size for the combined instrument is targeted at 50 nm or larger. Thus 0.4 nm of xyz uncertainty is acceptable. The instrument has been used for analyzing samples using FIB beam currents of 250 pA and 5.75 nA. Coarse tip approaches can take a long time so an abbreviated technique is employed. Because of the relatively long thro of the Z piezo, the tip can be disengaged by deactivating the servo PID. Once disengaged, it can be moved laterally out of the way of the FIB-SIMS using the coarse stage. This instrument has been used to acquire volumetric data on AlTiC using AFM tip diameters of 18.9 nm and 30.6 nm. Acquisition times are very long, requiring multiple days to acquire a 50-image stack. New features to be added include auto stigmation, auto beam shift, more software automation, etc. Longer term upgrades to include a new lower voltage Z-piezo with strain-gauge feedback and a new design to extend the life for the coarse XY nano-positioners. This AFM-SIMS instrument, as constructed, has proven to be a great proof of concept vehicle. In the future it will be used to analyze micro fossils and it will also be used as a part of an intensive teaching curriculum.
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Graham, Daniel J. "Multivariate analysis of TOF-SIMS spectra from self-assembled monolayers /." Thesis, Connect to this title online; UW restricted, 2001. http://hdl.handle.net/1773/8003.

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Dickinson, Michelle. "Secondary ion mass spectrometry (SIMS) analysis of the arsenic-hyperaccumulator, Pteris vittata." Thesis, University of Bristol, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.422557.

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Gilmore, Ian Stuart. "Development of a measurement base for static secondary ion mass spectrometry." Thesis, Loughborough University, 2000. https://dspace.lboro.ac.uk/2134/11110.

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This work sets out a framework to provide a metrological basis for static SIMS measurements. This surface analytical technique has been is use for over thirty years but, because of the lack of an infrastructure, has not achieved its full potential in industry. To build this basis, the measurement chain is studied from the sample through to the detector and data processing. By understanding the effects of each link in the chain, repeatabilities are reduced by orders of magnitude to below 1%, the ion beam current and flux density are calibrated to better than 2%, ion beam damage in polymers is controlled and detection efficiencies calculated. Utilising these developments, a characterised and calibrated SIMS spectrometer is used to establish reference materials. An inter-laboratory study to assess the extent of spectrum variability between spectrometers was conducted involving over twenty laboratories worldwide. Analysis of the data gives the level of repeatability and reproducibility using current procedures. Repeatabilities for some laboratories are as good as 1% but many are at 10% and a few as poor as 80%. A Relative Instrument Spectral Response, RISR, is developed to facilitate the comparison of spectra from one instrument to another or library data. For most instruments reproducibilities of 14% are achievable. Additionally, the wide variety of ion beam sources and energies, presently in use, result in spectra that are only broadly comparable. A detailed study of these effects provides, for the first time, a unified method to relate the behaviour for all ion species and energies. A development of this work gives a totally new spectroscopy, known as G-SIMS or gentle-SIMS. Here, the static SIMS spectrum for a low surface plasma temperature is calculated which promotes those spectral intensities truly representative of the analysed material and reduces those caused by additional fragmentation and rearrangement mechanisms. The resulting GSIMS spectra are easier to identify and are interpreted more directly. This work provides the essential basis for the development of static SIMS. Future work will improve the consistency of library data so that the valid data for molecular identification can be uniquely extracted. The measurement base will be developed to meet the growing requirements for static SIMS analysis of complex organic and biomaterials.
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Richter, Katrin. "Application of imaging TOF-SIMS in cell and tissue research /." Göteborg : Institute of Biomedicine, The Sahlgrenska Academy, Göteborg University, 2007. http://hdl.handle.net/2077/7447.

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Fu, Tingting. "3D and High Sensitivity Micrometric Mass Spectrometry Imaging." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS218/document.

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L'imagerie par spectrométrie de masse est d’un grand intérêt pour aborder les questions biologiques en fournissant simultanément des informations chimiques et spatiales. En particulier, la spectrométrie de masse baptisée TOF-SIMS est bien reconnue par sa haute résolution spatiale (< 1 μm), qui est essentielle pour révéler l'information chimique dans une zone submicronique. L'emploi croissant de cette technique dans la caractérisation des échantillons biologiques a bénéficié du développement de nouvelles sources d'ions d’agrégats. Cependant, les processus d'ionisation/désorption des analytes sous les impacts d’agrégats lourds sont encore mal compris. D'un autre côté, techniquement, les instruments TOF-SIMS commerciaux actuels ne peuvent pas fournir une résolution en masse suffisante ni une précision sur la détermination de la masse pour l'identification moléculaire, ce qui rend les analyses de systèmes biologiques complexes très difficiles, et nécessite le recours à la fragmentation MS/MS. Cette thèse vise à mieux comprendre la production d'ions sous l’impact d’agrégats lourds et à explorer la capacité MS/MS du spectromètre de masse par temps de vol combiné à l’imagerie ionique en utilisant le spectromètre de masse PHI nanoTOF II. Ce dernier point a été réalisé en cartographiant en haute résolution spatiale des métabolites importants de bois. Pour comprendre la production d'ions sous les impacts d’agrégats d'argon massifs, l'énergie interne des ions secondaires a été mesurée en utilisant la mesure du taux de survie d'une série d'ions benzylpyridinium. L'étude de diverses conditions d'impact (énergie, vitesse, taille des agrégats) a montré que la vitesse joue le rôle majeur dans la distribution d'énergie interne et la fragmentation moléculaire dans le régime à faible énergie par atome (E/n < 10 eV).Les capacités de la fragmentation MS/MS et d'imagerie en parallèle du spectromètre PHI nanoTOF II nouvellement conçu ont été évalués par cartographie MS/MS in situ des métabolites bioactifs rubrynolide et rubrenolide dans les espèces amazoniennes de bois Sextonia rubra, ainsi qu’une identification in situ des métabolites précurseurs. L'imagerie TOF-SIMS 2D et 3D a permis de localiser les cellules où cette biosynthèse s’effectue. Les résultats ont conduit à la proposition d'une voie possible de biosynthèse des deux métabolites. Pour étendre l'application de l'imagerie TOF-SIMS dans l'analyse chimique du bois, la distribution radiale des extraits de bois dans le duramen du bois du mélèze européen a également été étudiée
Mass spectrometry imaging has been shown of great interest in addressing biological questions by providing simultaneously chemical and spatial information. Particularly, TOF-SIMS is well recognized for its high spatial resolution (< 1 µm) which is essential in disclosing chemical information within a submicron area. The increasing use of TOF-SIMS in characterizing biological samples has greatly benefited from the introduction of new cluster ion sources. However, the ionization/desorption of the analytes under impacts of large clusters is still poorly understood. On the other hand, technically, current commercial TOF-SIMS instruments generally cannot provide sufficient mass resolution or mass accuracy for molecular identification, making analyses of complex biological systems especially challenging when no MS/MS fragmentation is available. Thus this thesis is aimed to get a better understanding of ion production under cluster impacts, to explore the MS/MS capability of the parallel imaging MS/MS Spectrometer (PHI nanoTOF II), as well as to apply TOF-SIMS to map important wood metabolites with high spatial resolution.In order to understand ion production under impacts of massive argon clusters, internal energy distributions of secondary ions were measured using survival yield method which involves the analyses of a series of benzylpyridinium ions. Investigation of various impacting conditions (energy, velocity, cluster size) suggested that velocity of the clusters play a major role in internal energy distribution and molecular fragmentation in the low energy per atom regime (E/n < 10 eV). The MS/MS fragmentation and parallel imaging capabilities of the newly designed PHI nanoTOF II spectrometer were evaluated by in situ MS/MS mapping of bioactive metabolites rubrynolide and rubrenolide in Amazonia wood species Sextonia rubra. Then this parallel imaging MS/MS technique was applied to perform in situ identification of related precursor metabolites in the same tree species. 2D and 3D TOF-SIMS imaging were carried out to target the plant cells that biosynthesize rubrynolide and rubrenolide. The results led to the proposal of a possible biosynthesis pathway of these two metabolites. In addition, to expand the application of TOF-SIMS imaging in wood chemistry analysis, radial distribution of wood extractives in the heartwood of European larch was also investigated
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Books on the topic "Spectrometrie sims"

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Benninghoven, Alfred, Richard J. Colton, David S. Simons, and Helmut W. Werner, eds. Secondary Ion Mass Spectrometry SIMS V. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82724-2.

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International Conference on Secondary Ion Mass Spectrometry (9th 1993 Yokahama). Secondary ion mass spectrometry: SIMS IX : proceedings of the Ninth International Conference on Secondary Ion Mass Spectrometry (SIMS IX)...,7-12 November 1993. Edited by Benninghoven A. 1932-. Chichester: Wiley, 1994.

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International Conferenceon Secondary Ion Mass Spectrometry (7th 1989 California, USA). Secondary ion mass spectrometry SIMS VII: Proceedings of the seventh International Conference on Secondary Ion Mass Spectrometry (SIMS VII), Hyatt Regency Hotel, Monterey, California, USA, September 3rd-8th, 1989. Edited by Benninghoven A. 1932-. Chichester: Wiley, 1990.

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International Conference on Secondary Ion Mass Spectrometry (10th 1995 Muenster, Germany). Secondary ion mass spectrometry, SIMS X: Proceedings of the Tenth International Conference on Secondary Ion Mass Spectrometry (SIMS X), University of Muenster, Muenster, Germany, October 1-6th, 1995. Edited by Benninghoven A, Hagenhoff B, and Werner H. W. Chichester: Wiley, 1997.

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International Conference on Secondary Ion Mass Spectrometry. (7th 1989 Monterey, Calif.). Secondary ion mass spectrometry: SIMS VII: proceedings of the seventh International Conference on Secondary Ion Mass Spectrometry (SIMS VII), Hyatt Regency Hotel, Monterey, California, USA, September 3rd-4th, 1989. Edited by Benninghoven A, Huber Alfred 1918-, and Werner H. W. Chichester: Wiley, 1990.

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Surface analysis of polymers by XPS and static SIMS. Cambridge, U.K: Cambridge University Press, 1998.

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International Conference on Secondary Ion Mass Spectrometry (5th 1985 Washington, D.C.). Secondary ion mass spectrometry: SIMS V : proceedings of the fifth international conference, Washington, DC, September 30-October 4, 1985. Edited by Benninghoven A. Berlin: Springer-Verlag, 1986.

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Vargas-Aburto, Carlos. Development of a quadrupole-based secondary-ion mass spectrometry (SIMS) system at Lewis Research Center. [Washington, D.C.]: NASA, 1990.

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Grasserbauer, M. Angewandte Oberflächenanalyse: Mit SIMS Sekundär-Ionen-Massenspektrometrie, AES Auger-Elektronen-Spektrometrie, XPS Röntgen-Photoelektronen-Spektrometrie. Berlin: Springer-Verlag, 1986.

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International Conference on Secondary Ion Mass Spectrometry (11th 1997 Orlando, Fla.). Secondary ion mass spectrometry, SIMS XI: Proceedings of the Eleventh International Conference on Secondary Ion Mass Spectrometry, Orlando, Florida, September 7-12th, 1997. Edited by Gillen G. Chichester: Wiley, 1998.

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Book chapters on the topic "Spectrometrie sims"

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Hiraoka, Kenzo. "Cluster SIMS." In Fundamentals of Mass Spectrometry, 199–230. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-7233-9_10.

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Mouhib, Taoufiq, and Arnaud Delcorte. "SIMS for Organic Film Analysis." In Mass Spectrometry Handbook, 961–1015. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118180730.ch42.

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MacDonald, R. J., and B. V. King. "SIMS — Secondary Ion Mass Spectrometry." In Springer Series in Surface Sciences, 127–54. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-662-05227-3_5.

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Ireland, Trevor R. "Secondary Ion Mass Spectrometry (SIMS)." In Encyclopedia of Scientific Dating Methods, 1–3. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-6326-5_106-1.

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Ireland, Trevor R. "Secondary Ion Mass Spectrometry (SIMS)." In Encyclopedia of Scientific Dating Methods, 739–40. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-6304-3_106.

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MacDonald, R. J., and B. V. King. "SIMS — Secondary Ion Mass Spectrometry." In Springer Series in Surface Sciences, 117–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-662-02767-7_5.

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Evans, Keenan. "Secondary Ion Mass Spectrometry, SIMS." In Failure Analysis of Integrated Circuits, 229–40. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-4919-2_14.

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Hutter, Herbert. "Dynamic Secondary Ion Mass Spectrometry (SIMS)." In Surface and Thin Film Analysis, 141–59. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch8.

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Hammond, John S. "Comparison of SIMS and MALDI for Mass Spectrometric Imaging." In Imaging Mass Spectrometry, 235–57. Tokyo: Springer Japan, 2010. http://dx.doi.org/10.1007/978-4-431-09425-8_18.

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Aoyagi, Satoka. "TOF-SIMS Applications to Bioimaging and Biomolecule Evaluation Methods." In Mass Spectrometry Handbook, 243–58. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118180730.ch11.

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Conference papers on the topic "Spectrometrie sims"

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Huang, Yanhua, Lei Zhu, Kenny Ong, Hanwei Teo, and Younan Hua. "An Effective SIMS Methodology for GOI Contamination Analysis." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0427.

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Abstract Contamination in the gate oxide layer is the most common effect which cause the gate oxide integrate (GOI) issue. Dynamic Secondary Ion Mass Spectrometry (SIMS) is a mature tool for GOI contamination analysis. During the sample preparation, all metal and IDL layers above poly should be removed because the presence of these layers added complexity for the subsequent SIMS analysis. The normal delayering process is simply carried out by soaking the sample in the HF solution. However, the poly surface is inevitably contaminated by surroundings even though it is already a practice to clean with DI rinse and tape. In this article, TOFSIMS with low energy sputter gun is used to clean the sample surface after the normal delayering process. The residue signals also can be monitored by TOF SIMS during sputtering to confirm the cross contamination is cleared. After that, a much lower background desirable by dynamic SIMS. Thus an accurate depth profile in gate oxide layer can be achieved without the interference from surface.
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Van Lierde, Patrick, Chunsheng Tian, Bruce Rothman, and Richard A. Hockett. "Quantitative secondary ion mass spectrometry (SIMS) of III-V materials." In Symposium on Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467668.

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Maheshwari, P., F. A. Stevie, G. Myeneni, G. Ciovati, J. M. Rigsbee, and D. P. Griffis. "Analysis of Interstitial Elements in Niobium with Secondary Ion Mass Spectrometry (SIMS)." In FIRST INTERNATIONAL SYMPOSIUM ON THE SUPERCONDUCTING SCIENCE AND TECHNOLOGY OF INGOT NIOBIUM. AIP, 2011. http://dx.doi.org/10.1063/1.3579233.

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Celichowski, G., and K. Chrobak. "Improving of Tribological Properties of Nanocomposites Sol-Gel Thin Films by Fluorocyclophosphazene Derivatives." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-64261.

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Fluorocyclophospazenes’ derivatives were used as modifiers for improving tribological properties of thin films prepared by sol-gel technique. Thin films were made on the base of aminopropyltriethoxysilane (APTS). All films were deposited by dip-coating method and post-treated by heat, UV radiation and low pressure of RF plasma. Chemical changes in sol-gel films during all steps of post-treatments and modifications were monitored by FT-IR spectroscopy and SIMS spectrometry. Topographies of modified surfaces were imaged by Atomic Force Microscopy (AFM). After final modification significant improvements of frictional properties were observed as well as their very good thermal stability.
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Shi, JiangBei, WeiTing Chien, QiHua Zhang, AiMin Li, and ChuanJun Liu. "SIMS Quantitative Analysis and Optimization for Ion Implantation Angle Deviation." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0211.

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Abstract The accuracy of ion implantation is very important in semiconductor manufacturing and will directly affect the performance of the individual devices and even the whole chip. The deviations of ion implantation energy, dose and angle often result from abnormality of implant equipment or process design limit. The information of ion implantation energy, dose and angle can be qualitatively and quantitatively analyzed by SIMS (Secondary Ion Mass Spectrometry) [1], which provides a way to diagnose ion implanter issue. Based on SIMS analysis results, we can judge whether ion implanter meets the requirements and whether the process design achieves the expected goal. In this paper, we report a SIMS data analysis method determine the deviation of ion implantation angle. A term of deviation rate is defined and a related calculation method was introduced, which is proportional to the deviation angles of the ion implanter. Then, a statistical analysis on a large number of data of deviation rates and ion implantation angles showed that the sampling data followed normal distribution, and thus the corresponding 3 sigma could be obtained. Using the determined 3 sigma range of the deviation rates, we can define the acceptable range for deviation rate. Further, we can use the actual deviation rate to judge if the implant equipment needs maintenance or not, or suggest the direction for improvement. Finally, we set up an oriented and quantitative optimization method of angle deviation by the full mapping of SIMS depth profiles, which can directly set the relationship between the angle deviation and the adjustment parameters of ion implantation disk (Δ alpha, Δ beta). The equipment’s maintenance time and cost can thus be minimized. This method can be used as early detection to the abnormity of ion implant equipment.
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Tani, Hiroshi, Yuta Shibahara, Renguo Lu, Shinji Koganezawa, and Norio Tagawa. "TOF-SIMS Analysis of Accumulated PFPE Lubricant Smear Following Laser Heating." In ASME-JSME 2018 Joint International Conference on Information Storage and Processing Systems and Micromechatronics for Information and Precision Equipment. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/isps-mipe2018-8515.

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The structural and molecular weight changes to lubricant picked up following laser heating in heat-assisted magnetic recording (HAMR) were analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS). The intensity of the ion mass fragments depended on the decomposition pathways and changed drastically, as did the average molecular weight of the picked-up lubricant as heating temperature increased. The fragment series formed by the dissociation of end groups with low molecular weights (CH3O+) showed a high intensity at temperatures under 300 °C, whereas at temperatures over 400 °C, the fragments series formed by the dissociation of the end-group component (C5H9O4F2+) increased. Overall, the results presented herein suggest that the chemical and thermal stability of the hydrocarbon terminal ends of lubricants should be improved in order to decrease depletion of the lubricant film and lubricant pickup by laser heating in HAMR.
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Tomotani, Miki, Hiroshi Ashida, Yasuyuki Goto, and Seigen Otani. "Evaluation of Pt/PZT/Pt Capacitors Using SIMS." In ISTFA 1998. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.istfa1998p0185.

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Abstract Ferro-electric thin film materials have been used for nonvolatile random access memories(FRAM*). PZT(Pb(Ti,Zr)O3) is one of several promising materials for use as a FRAM capacitor in combination with a platinum film as an electrode. However the ferroelectric properties of this capacitor are degraded by commonly used LSI processes, such as a passivation/ insulator(CVD-SiO2) process. Recently, mechanisms of process degradation are being investigated**,***, but are not clearly understood yet. For example, to our knowledge the existence of hydrogen in the capacitor after an annealing in hydrogenous atmosphere has not yet been measured by analytical methods. As a result in this study, we measured electrical properties of Pt/PZT/Pt capacitors after a 7.6 torr N2-H2 annealing at various hydrogen partial pressures and temperatures. Then we measured composition profiles of these capacitors by Secondary Ion Mass Spectrometry(SIMS). We found that after the N2-H2 annealing, the non-volatile polarization(Pnv)(uC/cm2) of the capacitors rapidly decreased under the presence of hydrogen at lower temperatures. At the same time, SIMS profiles showed that hydrogen concentration increased in the PZT film, and oxygen concentration decreased in the upper Pt film. We considered that the increase of hydrogen in the PZT film causes the degradation of electric properties, and the decrease of oxygen in the Pt film makes the adhesion force between the upper platinum electrode and the PZT film weaker. Moreover we found that the degradation can be eliminated by annealing in oxygen at temperatures as high as 400 °C.
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Huang, Yanhua, Lei Zhu, Kenny Ong, Hanwei Teo, Shuting Chen, Younan Hua, Miao Shen, and Hao Gong. "SIMS Analysis for the Threshold Voltage Shift of Power MOS Caused by Abnormal Dopant Diffusion." In ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0290.

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Abstract Threshold Voltage (Vt) of MOSFET controls transistor’s on and off state. Vt is usually depends on gate oxide thickness and operating temperature. Systematic failure analysis for a Vt shift issue, should also consider the channel doping which affects the inversion layer formation. In this article, the failure case of a shift in the Vt of a Power MOSFET V is studied. Secondary Ion Mass Spectrometry (SIMS) is found to be the most direct way for detecting any abnormality in the channel doping profiles. A comprehensive simulation is performed showing that the Phosphorus level diffusion from substrate was so high that it affects the doping concentration of channel.
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Zhu, David, Soh Ping Neo, Alfred Quah, Ghim Boon Ang, Lei Zhu, Yanhua Huang, Hong Tak Koo, Moi Kian Yau, Ma Hninhnin, and Nagalingam Dayanand. "A Systematic Failure Analysis to Reveal the Mystery of Lower N-Well Resistance." In ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0185.

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Abstract In this paper, we will describe a low yield case which revealed itself as leakage failures near the wafer edge. A systematic problem solving approach was used based on the application of a variety of FA techniques such as electrical curve tracing, Spreading Resistance Probing (SRP), Secondary Ion Mass Spectrometry (SIMS), and Chemical Analysis coupled with extensive Fab investigations. These techniques transformed an invisible defect into a visible one, leading to a full resolution of the issue with good understanding of the failure mechanism and the root cause. We will show that the wafer edge leakage was the result of N-type contamination of the substrate due to Phosphorus outgassing from the V-ring during the high temperature Argon anneal process.
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He, Sheng, Dongfa Guo, Jianyong Cui, Ruiping Liu, and Zengwei Fan. "Possible High U Effect on Secondary Ion Mass Spectrometry (SIMS) of Cassiterite U-Pb Dating." In Goldschmidt2020. Geochemical Society, 2020. http://dx.doi.org/10.46427/gold2020.996.

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Reports on the topic "Spectrometrie sims"

1

MacPhee, J. A., R. R. Martin, and N. S. McIntyre. An investigation of coal using secondary ion mass spectrometry (SIMS). Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1985. http://dx.doi.org/10.4095/302550.

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Hickmott, Donald D., and Lee D. Riciputi. Science of Signatures Workshop on Secondary Ion Mass Spectrometry (SIMS) Applications July 24, 2012. Office of Scientific and Technical Information (OSTI), July 2012. http://dx.doi.org/10.2172/1047099.

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Riciputi, Lee. Science of Signatures Workshop on Secondary Ion Mass Spectrometry (SIMS) Applications Some Nuclear and Geological Applications. Office of Scientific and Technical Information (OSTI), July 2012. http://dx.doi.org/10.2172/1047088.

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Evans, Jr, and Charles A. Development and Application of SIMS (Secondary Ion Mass Spectrometry) Characterization Techniques for the Study of Impurities and Impurity Motion in (HgCd)Te and CdTe. Fort Belvoir, VA: Defense Technical Information Center, September 1985. http://dx.doi.org/10.21236/ada163047.

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Pritchett, Jeanita, Katrice A. Lippa, Mary Bedner, Carolyn Q. Burdette, Johanna E. Camara, David L. Duewer, Brian E. Lang, et al. Summary of NIST-SIM chemical metrology working group training opportunity: isotope dilution-mass spectrometry clinical measurement course. Gaithersburg, MD: National Institute of Standards and Technology, December 2016. http://dx.doi.org/10.6028/nist.sp.1209.

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