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Relevant bibliographies by topics / Spectrum analysis Semiconductors

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Academic literature on the topic 'Spectrum analysis Semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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Journal articles on the topic "Spectrum analysis Semiconductors"

1

Meyer, J. R., C. A. Hoffman, J. Antoszewski, and L. Faraone. "Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors." Journal of Applied Physics 81, no. 2 (January 15, 1997): 709–13. http://dx.doi.org/10.1063/1.364211.

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Lee, Hong-Sub, and Hyung-Ho Park. "Band Structure Analysis of La0.7Sr0.3MnO3Perovskite Manganite Using a Synchrotron." Advances in Condensed Matter Physics 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/746475.

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Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study aLa0.7Sr0.3MnO3(LSMO) oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

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Kobasa, I. M. "Heterostructures based on nanodispersed TiO2 and binary systems TiO2-CdTe, TiO2-Cu(In,Ga)Se2 sensitized by polymethyn dye, as photocatalysts of redox processes." Chernivtsi University Scientific Herald. Chemistry, no. 819 (2019): 23–30. http://dx.doi.org/10.31861/chem-2019-819-04.

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New light-sensitive heterostructures of semiconductors (TiO2, TiO2-CdTe, TiO2-Cu(In,Ga)Se2) sensitized with an anionic polymethine dye with three conjugated chromophores have been developed. Based on the analysis of the results of spectral, electrochemical and energy characteristics of the studied dye, the possibility of its use as an effective sensitizer of these semiconductor materials is shown. It was found that the deposition of the dye on TiO2 leads to both batochromic and hypsochromic shifts of long wavelength absorption bands, the values of which depend on the dye content in the heterostructure. This leads to a redistribution of the intensities of the absorption bands, they expand and cover almost the entire part of the visible and near-IR regions of the spectrum. This feature of the created heterostructure allows to increase the efficiency of their photocatalytic action through the use of light quanta of a wide energy range. The results of the analysis of the absorption spectra of heterostructures testify to the significant influence of semiconductors on the electronic system of dye molecules. As a result, the angle between the directions of the chromophores changes. The antibate dependence of the degree of conformational changes on the amount of dye in the heterostructure is revealed. This indicates a decrease in the interaction with the semiconductor with increasing concentration and explains the decrease in the photocatalytic activity of heterostructures at a significant content of sensitizer. Using the method of cyclic voltammetry, for the first time the oxidation and reduction potentials of the investigated polymethine dye were determined. The values of HOMO and LUMO energy levels are calculated, a forecast is made regarding the possibility of their use as sensitizers of the studied semiconductors and the creation of highly efficient redox systems. The photocatalytic activity of heterostructures in the reactions of reduction of methylene blue and oxidation of iodide ions under irradiation with light absorbed by a semiconductor and a sensitizer has been revealed. Based on the analysis of energy parameters of electronic processes, the scheme of this photocatalytic transformation is proposed and substantiated.

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4

Kundmann, Michael K., and Gronsky Ronald. "Plasmon lineshape analysis in EELS of semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 500–501. http://dx.doi.org/10.1017/s042482010010456x.

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Many materials display plasmon peaks in their low-loss EELS spectra. The plasmon peak shape, energy, and linewidth are characteristic of each material and are sensitive to the outer-shell electron density and details of the electronic band and energy-level structures. As these properties are a function not only of the composition but also the structure and chemistry of a sample, plasmon spectroscopy can potentially become a materials characterization tool which goes beyond the elemental analyses provided by EDXS and ionization-edge EELS. However, analysis of plasmon spectra requires considerably more sophistication than either of the aforementioned techniques due to the possibility of overlapping spectrum features, the prevalence of plural scattering, and the difficulty in detecting and characterizing the often subtle differences between the plasmon spectra of similar materials. As yet, no systematic approach to plasmon analysis analogous to that available commercially for EDXS or EELS core-edge analysis has been developed. We present here an approach which, for the simple case of semiconductors, makes some progress in this direction.

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García, Gregorio, Pablo Sánchez-Palencia, Pablo Palacios, and Perla Wahnón. "Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials." Nanomaterials 10, no. 2 (February 7, 2020): 283. http://dx.doi.org/10.3390/nano10020283.

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This work explores the possibility of increasing the photovoltaic efficiency of InP semiconductors through a hyperdoping process with transition metals (TM = Ti, V, Cr, Mn). To this end, we investigated the crystal structure, electronic band and optical absorption features of TM-hyperdoped InP (TM@InP), with the formula TMxIn1-xP (x = 0.03), by using accurate ab initio electronic structure calculations. The analysis of the electronic structure shows that TM 3d-orbitals induce new states in the host semiconductor bandgap, leading to improved absorption features that cover the whole range of the sunlight spectrum. The best results are obtained for Cr@InP, which is an excellent candidate as an in-gap band (IGB) absorber material. As a result, the sunlight absorption of the material is considerably improved through new sub-bandgap transitions across the IGB. Our results provide a systematic and overall perspective about the effects of transition metal hyperdoping into the exploitation of new semiconductors as potential key materials for photovoltaic applications.

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West, Ryan M., Colby R. Watts, Mira Josowicz, and Jiří Janata. "Fluctuation analysis of work function of organic semiconductors." Collection of Czechoslovak Chemical Communications 76, no. 7 (2011): 843–58. http://dx.doi.org/10.1135/cccc2011055.

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We demonstrate, for the first time, work function fluctuations of a polyaniline film when used as the gate conductor of an insulated-gate field-effect transistor. The work function fluctuations induce drain current fluctuations, which are in excess of the channel noise of the transistor and the Nyquist noise of the polyaniline film. Using the fluctuation-dissipation theorem, it is determined that the fluctuations have a Lorentzian-like spectrum and are thermally activated with an activated energy of ca. 300 meV. The activation energy, as well as the corner frequency and magnitude of the fluctuations, depend on the applied electric field at the polyaniline–insulator interface. These results, along with coherence measurements, suggest that the fluctuations originate near the interface in the space-charge region of polyaniline. This technique provides kinetic and thermodynamic information about the gate conductor, at equilibrium, which cannot be extracted using other techniques that measure work function. Furthermore, by this technique it is possible to distinguish the fluctuations of the work function from the Nyquist noise. This approach should be generally applicable to any semiconducting material used as the gate conductor of a field-effect transistor.

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Pathak, Dinesh, Sanjay Kumar, Sonali Andotra, Jibin Thomas, Navneet Kaur, Praveen Kumar, and Vaneet Kumar. "New tailored organic semiconductors thin films for optoelectronic applications." European Physical Journal Applied Physics 95, no. 1 (July 2021): 10201. http://dx.doi.org/10.1051/epjap/2021210090.

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In this study, we have investigated new tailored organic semiconductor materials for optoelectronic application, such as organic solar cells. The carbon-based organic semiconductor material has promising advantages in organic thin-film form. Moreover, due to its low cost, organic thin films are suitable and cheaper than inorganic thin-film. The bandgap of organic semiconductors materials can be tuned and mostly lies between 2.0 eV and 4 eV and the optical absorption edge of organic semiconductors typically lies in between 1.7 eV and 3 eV. They can be easily tailored by modifying the carbon chain and legends and looks promising for engineering the bandgap to harness the solar spectrum. In this work, with new tailored organic semiconductors, the solution route is explored which is a low-cost processing method. (Anthracen-9-yl) methylene naphthalene-1-amine; 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3, 4-dimethoxyaniline thin-films are processed by spin coating method with changing concentration such as 0.05 wt.% and 0.08 wt.%. Thin films of organic semiconductors were prepared on the glass substrate and annealed at 55 °C. The structural and optical behavior of (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one, and N-(anthracen-9-ylmethyl)-3, 4-dimethoxyaniline organic semiconductors thin films is studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and UV-Visible spectroscopy technique. The XRD data of the synthesized sample suggests the nano crystallinity of the organic layers. And, the SEM micrographs show the dense packing when we increase the wt.% 0.05 to 0.08. Additionally, analysis of the optical absorption measurements found that the engineered bandgap of synthesized thin films are 2.18 eV, 2.35 eV, 2.36eV, 2.52eV, and 2.65eV which suggest suitability for applications of optoelectronic devices such as solar cell. Such lightweight, eco-friendly and disposable new carbon-based materials seem to have the potential to replace other traditional hazardous heavy materials for future eco-friendly flat fast electronics.

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Morrison, S. Roy. "1/f Noise from levels in a linear or planar array: Dislocations in metals." Canadian Journal of Physics 71, no. 3-4 (March 1, 1993): 147–51. http://dx.doi.org/10.1139/p93-022.

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This report compares the double-layer noise expected for metal dislocations with the earlier analysis of semiconductor dislocations. In both cases we describe the asymmetric trapping of charge over an electrical double layer at the dislocation. The earlier reports describe how a 1/f spectrum should be observed, in the form of a truncated Lorentzian, if the double-layer voltage shows fluctuations greater than kT/q. This report describes the origin of a double layer at metal dislocations that fulfills the requirements. It shows why, despite the substantial difference in parameters, the noise predicted for metals is of the same magnitude (in terms of the Hooge parameter) as that predicted for semiconductors.

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Song, J. G., Lin Hua, Qiang Shen, Fang Wang, and Lian Meng Zhang. "Synthesis and Characterization of SnO₂ Nano-Cystalline for Dye Sensitized Solar Cells." Key Engineering Materials 602-603 (March 2014): 876–79. http://dx.doi.org/10.4028/www.scientific.net/kem.602-603.876.

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The study of dye-sensitized solar cells (DSCs) based on nanocrystalline films of high band gap semiconductors is a progressive field of research that is being carried out by scientists in a wide range of laboratories. Of the many semiconductor materials utilized for conversion of solar energy into electricity, SnO2 is a high band gap semiconductor that has been used extensively. However, its efficiency is at a relatively lower level when compared to other semiconductor materials such as TiO2 working under similar circumstances. To improve the conversion efficiency of the DSCs, the SnO2 nanorots photocurrent is prepared via the hydrothermal method, and characterized by XRD, FESEM, BET and Absorption spectrum. Though analysis the results, SnO2 nanocrystalline were successfully synthesized using a hydrothermal method by certainly experimental parameters. The SnO2 nanocrystalline is the rod-shape with length for 100nm and diameter for 5nm as pH=11. the specific surface area is 86.3412m2/g, which lay base for reaching the high conversion efficiency of the DSCs.

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Chen, Jingrun, Jason D. A. Lin, and Thuc-Quyen Nguyen. "Towards a Unified Macroscopic Description of Exciton Diffusion in Organic Semiconductors." Communications in Computational Physics 20, no. 3 (August 31, 2016): 754–72. http://dx.doi.org/10.4208/cicp.050615.010216a.

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AbstractWe study the exciton diffusion in organic semiconductors from a macroscopic viewpoint. In a unified way, we conduct the equivalence analysis between Monte-Carlo method and diffusion equation model for photoluminescence quenching and photocurrent spectrum measurements, in both the presence and the absence of Förster energy transfer effect. Connections of these two models to Stern-Volmer method and exciton-exciton annihilation method are also specified for the photoluminescence quenching measurement.

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Dissertations / Theses on the topic "Spectrum analysis Semiconductors"

1

鄧愛紅 and Aihong Deng. "Some studies towards improving positron lifetime spectroscopy for semiconductors." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31214083.

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Di, Pietro Riccardo. "Charge accumulation spectroscopy of organic semiconductors." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610645.

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Deng, Aihong. "Some studies towards improving positron lifetime spectroscopy for semiconductors /." Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B18538757.

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4

Pester, Paul D. "Optical beam induced phenomena in semiconductors." Thesis, University of Oxford, 1988. http://ora.ox.ac.uk/objects/uuid:a02591ee-1600-4c9c-ab19-30447edc07da.

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This thesis is concerned with the interaction of a finely focussed light beam and a semiconductor. The object of the work is to develop a consistent theory which explains the formation of both the optical beam induced current and photoluminescence signals with a view to using these techniques to characterize semiconductor materials. Here we extend previous theories by considering a light beam which is focussed through a lens of finite numerical aperture. Expressions are derived which give the distribution of excess minority carriers injected into a semi-infinite semiconductor by the focussed light beam. The injected minority carrier distribution is then used to predict the imaging properties of the optical beam induced current and photoluminescence techniques when used to image electrically active defects in semiconductors. High resolution scanning photoluminescence images of indium phosphide are presented showing a resolution which is in good agreement with theory. The form of both the steady state and time dependent optical beam induced current in Schottky barrier diodes, planar junction diodes and devices where the p-n junction is perpendicular to the semiconductor surface is derived. Various methods are suggested for measuring the minority carrier diffusion length and lifetime. An extension to previous analyses is given by considering the effect of scanning the light beam, at some arbitrary velocity, on the form of the optical beam induced current collected by a p-n junction either parrallel or perpendicular to the semiconductor surface. It is also shown how the scan speed can effect the imaging of electrically active defects producing a contrast function which is asymmetric and reduced in magnitude. An analysis of the photoluminescence signal generated from a semi-infinite semiconductor by a finely focussed light beam is given. Various methods based on the photoluminescence technique are suggested for measuring the minority carrier lifetime.

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5

Oliva, Vidal Robert. "High-pressure optical and vibrational properties of InN and InGaN." Doctoral thesis, Universitat de Barcelona, 2016. http://hdl.handle.net/10803/400490.

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This thesis is devoted to the study of the optical and vibrational properties of indium nitride (InN) and indium gallium nitride (InGaN) at room and high-pressure conditions. For this purpose, we have employed spectroscopic tools such as absorption spectroscopy or Raman scattering in order to investigate a series of InN and InGaN thin films grown with different methods and on different substrates. For the high-pressure measurements, we have employed the diamond anvil cell technique. High-pressure optical absorption experiments on InN epilayers have allowed us to observe the direct-to-indirect bandgap transition at 15 GPa, where wurtzite InN (w-InN) transits to the rocksalt polymorph (rs-InN). Investigating w-InN samples with different levels of residual electron density, we have been able to estimate the bandgap pressure coefficient of intrinsic w-InN (32 meV/GPa). In addition, we have measured the indirect bandgap of rs-InN and its pressure dependence. We have also performed FTIR reflectivity measurements to determine the pressure dependence of the refractive index of w-InN and rs-InN. By fitting the experimental results with a model for the dielectric function, we have determined the pressure coefficient of the high-frequency dielectric constant of both phases. The pressure coefficient of the phonon frequencies of w-InN and their respective mode Grüneisen parameters have been measured by high-pressure Raman spectroscopy. After the wurtzite-to-rocksalt phase transition and the rocksalt-to-wurtzite backtransition upon decompression, the Raman features of both (amorphized) phases have been assigned in terms of first-principle lattice-dynamics calculations. Raman measurements on a heavily doped n-type sample have allowed us to detect a longitudinal-optical plasmon coupled mode, from which we have evaluated the pressure dependence of the electron effective mass of w-InN. With the aim of comparing the pressure behavior of the optical modes of rs-InN with that of a material exhibiting the rocksalt structure at ambient conditions, a high-pressure Raman-scattering study on rocksalt CdO is also presented. The optical and vibrational properties of the InGaN alloy as a function of composition have also been investigated. The composition dependence of the fundamental bandgap of InGaN has been studied with optical absorption, and high-pressure photoluminescence measurements have been carried out to determine the pressure coefficients of the optical emission. In turn, the optical and acoustic phonons of InGaN have been investigated as a function of alloy composition at ambient conditions. From Raman measurements on InGaN thin films, we have found that strain importantly affects the dependence on composition of the optical modes. An analysis to correct for the strain-induced shifts as well as to assess the effect of compositional inhomogeneities on the optical phonon frequencies of InGaN is provided. For the study of the acoustic modes of InGaN at room pressure, we have performed high-resolution Brillouin spectroscopy measurements, which have allowed us to determine the velocity of the surface acoustic waves of InGaN as a function of composition. With the aid of theoretical simulations based on the Green’s function formalism, these velocities have been used to evaluate the compositional dependence of the elastic constants of the alloy. Additional Raman-scattering measurements on InGaN/GaN superlattices have allowed us to detect the folded acoustic modes and observe the linear dispersion of the LA modes in InGaN, as predicted by elastic continuum theory. Finally, the behavior of the optical modes of InGaN under pressure has been investigated by Raman spectroscopy on epilayers grown on GaN/Al2O3 and Si(111) substrates. This study, which was initially aimed at determining the Grüneisen parameters of the optical phonons, has revealed that the experimental results strongly depend on the compressibility of the substrate material. We conclude that the pressure coefficients of free-standing InGaN should follow a linear dependence between those of GaN and InN.

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Ishida, Keiichi. "Landau spectra of ZnH and neutral Zn in germanium." Access electronically, 2004. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20041220.135747/index.html.

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Othman, Maslina. "Spectroscopic ellipsometry analysis of nanoporous low dielectric constant films processed via supercritical carbon dioxide for next-generation microelectronic devices." Diss., Columbia, Mo. : University of Missouri-Columbia, 2007. http://hdl.handle.net/10355/4879.

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Thesis (Ph.D.)--University of Missouri-Columbia, 2007.
The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on March 24, 2009) Vita. Includes bibliographical references.

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Chavva, Venkataramana Reddy. "Development of a deep level transient spectrometer and some deep levelstudies of Gallium Arsenide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1993. http://hub.hku.hk/bib/B31211252.

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Shek, Yiu-fai, and 石耀輝. "Electric field distribution in metal/semi-insulating GaAs contacts investigated by positron lifetime technique." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31221579.

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Chavva, Venkataramana Reddy. "Development of a deep level transient spectrometer and some deep level studies of Gallium Arsenide /." [Hong Kong : University of Hong Kong], 1993. http://sunzi.lib.hku.hk/hkuto/record.jsp?B13637599.

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Books on the topic "Spectrum analysis Semiconductors"

1

Mikla, Victor I. Trap level spectroscopy in amorphous semiconductors. London: Elsevier, 2010.

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A, Bordovskiĭ G., ed. Termoaktivat͡sionnai͡a tokovai͡a spektroskopii͡a vysokoomnykh poluprovodnikov i diėlektrikov. Moskva: "Nauka," Glav. red., 1991.

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1943-, D'Andrea A., Quagliano L. G, and Selci S, eds. Highlights of light spectroscopy on semiconductors: HOLSOS 95 : Villa Tuscolana, Frascati, Roma, Italy, 11-12 September 1995. Singapore: World Scientific, 1996.

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4

Klingshirn, C. F. Semiconductor optics. Berlin: Springer, 1995.

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Semiconductor optics. Berlin: Springer, 1997.

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Semiconductor optics. Berlin: Springer, 2005.

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Semiconductor optics. 3rd ed. Berlin: Springer, 2007.

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8

Antonio, Cricenti, and Epioptics Workshop (8th : 2004 : Erice, Italy), eds. Epioptics-8: Proceedings of the 33rd course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2004. Hackensack, N.J: World Scientific, 2006.

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Antonio, Cricenti, and Epioptics Workshop (9th : 2006 : Erice, Italy), eds. Epioptics-9: Proceedings of the 39th course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2006. Singapore: World Scientific, 2008.

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Antonio, Cricenti, Ettore Majorana International Centre for Scientific Culture., and Epioptics Workshop (6th : 2000 : Erice, Italy), eds. Epioptics 2000: Proceedings of the 19th course of the International School of Solid State Physics : Erice, Sicily, Italy, 19-25 July 2000. New Jersey: World Scientific, 2001.

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Book chapters on the topic "Spectrum analysis Semiconductors"

1

Spaeth, Johann-Martin, and Harald Overhof. "Analysis of ENDOR Spectra." In Point Defects in Semiconductors and Insulators, 197–264. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-642-55615-9_6.

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Dharma-wardana, M. W. C., G. C. Aers, D. J. Lockwood, and J. M. Baribeau. "Analysis of Raman Spectra of GeSi Ultrathin Superlattices and Epilayers." In Light Scattering in Semiconductor Structures and Superlattices, 81–102. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3695-0_8.

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Andrei, I. R., G. V. Popescu, C. M. Ticos, and M. L. Pascu. "Optical Spectrum Analysis of Chaotic Synchronization in a Bidirectional Coupled Semiconductor Laser System." In Chaos and Complex Systems, 425–29. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-33914-1_60.

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Bożym, J., E. Dudziak, D. Pruchnik, and Z. R. Wasilewski. "Spectrum Shape Analysis of Magnetoreflectivity and Magnetorotation of Polarisation Plane of Light Reflected from GaAs/AlGaAs MQW’s in the Quantum Hall Regime." In Optical Properties of Semiconductor Nanostructures, 65–70. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1_5.

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Baranov, A. N., A. N. Imenkov, M. P. Mikhailova, and Yu P. Yakovlev. "Semiconductor Lasers and Photodiodes for Gas Analysis in the Spectral Range 1.8–2.5 μM." In Monitoring of Gaseous Pollutants by Tunable Diode Lasers, 79–83. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2763-9_9.

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"Self-Consistent Computer Analysis of Cathodoluminescence In-depth Spectra for Compound Semiconductor Heterostructures." In Compound Semiconductors 2001, 493–504. CRC Press, 2002. http://dx.doi.org/10.1201/9781482268980-69.

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Ullrich, Bruno, and Haowen Xi. "Theoretical Analysis of the Spectral Photocurrent Distribution of Semiconductors." In Optoelectronics - Advanced Materials and Devices. InTech, 2013. http://dx.doi.org/10.5772/51412.

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Duncan, Walter M., and Steven A. Henck. "Insitu spectral ellipsometry for real-time measurement and control." In Semiconductor Materials Analysis and Fabrication Process Control, 9–16. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-89908-8.50008-8.

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"Theoretical Analysis of Optical Gain Spectra." In Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, 41–78. CRC Press, 2000. http://dx.doi.org/10.1201/9781482268065-8.

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Arena, C., L. Tarricone, F. Genova, and G. Morello. "Temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures." In Semiconductor Materials Analysis and Fabrication Process Control, 202–7. Elsevier, 1993. http://dx.doi.org/10.1016/b978-0-444-89908-8.50042-8.

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Conference papers on the topic "Spectrum analysis Semiconductors"

1

Guoxu Liu, Jay, Wei Tang, Yonghao Qin, Guoxi Sun, and Chongyu Shen. "Quantitative Analysis of Full Spectrum LEDs for High Quality Lighting." In 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS). IEEE, 2018. http://dx.doi.org/10.1109/ifws.2018.8587355.

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Barton, Daniel L., Paiboon Tangyunyong, Jerry M. Soden, Christopher L. Henderson, Edward I. Cole, Rainer Danz, Reinhard Steiner, and Zbigniew Iwinski. "Light Emission Spectral Analysis: The Connection Between the Electric Field and the Spectrum." In ISTFA 1999. ASM International, 1999. http://dx.doi.org/10.31399/asm.cp.istfa1999p0057.

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Abstract The device physics necessary to gain theoretical insight into the relationship between the bias conditions and the associated electric field for semiconductor structures in various failure conditions such as forward and reverse biased junctions, MOSFET saturation, latchup, and gate oxide breakdown are examined. The relationships are verified by light emission spectra collected from test samples under various bias conditions. Several examples are included that demonstrate the utility and limitations of spectral analysis techniques for defect identification and the associated, non-electric field related information contained in the spectra.

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Roy, Anirban, Eoghan Dillon, Qichi Hu, Jay Anderson, Kevin Kjoller, Roshan Shetty, and Craig Prater. "Characterizing Organic Nanocontamination in Semiconductors by Resonance Enhanced AFM-IR." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0446.

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Abstract Continuous development in the semiconductor process technology has led to the fabrication of devices with nanometer scale feature resolution. Resonance enhanced atomic force microscopy infrared (AFM-IR) is a novel technique with potential to overcome some limitations of existing tools. This manuscript illustrates chemical characterization of the nanoscale skin and polyester contaminant on silicon wafer using resonance enhanced AFM-IR spectroscopy. Resonance enhanced AFM-IR offers superior sensitivity for nanoscale organic contaminants. To demonstrate this capability, AFM-IR spectra were obtained from contaminants on silicon wafers, and the spectra correlated with a high confidence to a standard transmission FTIR spectral database. In addition, a newly developed high speed spectral acquisition scheme, which augments the reliability of nanoscale defect characterization by reducing the overall data acquisition time and enabling users to perform repeated measurements for statistical analysis, is established.

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Lo, Michael, Eoghan Dillon, Qichi Hu, Kevin Kjoller, Roshan Shetty, Craig Prater, and Sean W. King. "AFM-Based Chemical and Mechanical Property Characterization of Interconnects and Defects." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0159.

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Abstract Spectroscopic characterization of interconnects and circuits in semiconductor devices has become increasingly complicated as dimensions for breakthroughs and failure analysis are continuously shrinking. To achieve high spatial resolution infrared (IR) spectroscopic information, a pulsed infrared laser can be coupled to an atomic force microscope in the atomic force microscopy IR (AFM-IR) technique. The combination of AFM-IR and Lorentz contact resonance AFM (LCR-AFM) has great potential for providing high spatial resolution chemical and mechanical analysis. To demonstrate the feasibility of the AFM-based techniques, AFM-IR spectrum and images were obtained from the interlayer dielectrics of a test structure at a length scale shorter than the IR wavelength. Using the LCR-AFM technique, the relative mechanical properties of the components could be mapped distinctively by observing the contact resonance of the AFM probe. Finally, preliminary data suggest there may be AFM-IR spectral differences between contamination and the bulk material on a liquid crystal display.

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DeChiaro, Louis F., Shlomo Ovadia, Lawrence M. Schiavone, and Claude J. Sandroff. "Quantitative spectral analysis in semiconductor laser reliability." In OE/LASE '94, edited by Pei C. Chen, Lawrence A. Johnson, and Henryk Temkin. SPIE, 1994. http://dx.doi.org/10.1117/12.176605.

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Shaaban, Noha, Fukuzo Masuda, and Hidetsugu Morota. "A New Waveform Signal Processing Method Based on Adaptive Clustering-Genetic Algorithms." In 14th International Conference on Nuclear Engineering. ASMEDC, 2006. http://dx.doi.org/10.1115/icone14-89866.

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We present a fast digital signal processing method for numerical analysis of individual pulses from CdZnTe compound semiconductor detectors. Using Maxi-Mini Distance Algorithm and Genetic Algorithms based discrimination technique. A parametric approach has been used for classifying the discriminated waveforms into a set of clusters each has a similar signal shape with a corresponding pulse height spectrum. A corrected total pulse height spectrum was obtained by applying a normalization factor for the full energy peak for each cluster with a highly improvements in the energy spectrum characteristics. This method applied successfully for both simulated and real measured data, it can be applied to any detector suffers from signal shape variation.

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Orlenson, Vulf, Alim Mazinov, and Alexey Shevchenko. "MODEL FOR CALCULATION OF THE OPTICAL ABSORPTION SPECTRA OF SEMICONDUCTOR MATERIALS." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1607.silicon-2020/224-226.

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Zhu, Yangjun, Chunyan Miao, Qinghai Miao, Xinghua Zhang, and Shuojin Lu. "A Novel Thermal Spectrum Analysis Method for Reliability Analysis of Semiconductor Devices." In 2007 Canadian Conference on Electrical and Computer Engineering. IEEE, 2007. http://dx.doi.org/10.1109/ccece.2007.219.

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Zakaria, Nurhanani. "Charging Reduction Method for Auger Analysis on Imide Surface." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0502.

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Abstract This paper outlines a method that has been found to effectively reduce the charging effect on imide surfaces during Auger analysis. This methodology enables in-house Auger analysis on insulators in the semiconductor industry. The compositional analysis at the imide surface is as critical as analysis at the bond pad surface due to its impact on the reliability of the product. Current practice is the use of a thin Au/Pd coating to reduce the charging effect, but there are some drawbacks such as the creation of artifacts due to the presence of Au/Pd peaks in the spectrum. Apart from that, the signal to noise ratio (S/N) is reduced, masking the desired signal. When this scenario occurs, we implement a new combination method of a low angle incident beam along with special sample preparation. This method provides a spectrum with good S/N and no charging effects and eliminates the Au/Pd peak artifacts.

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Malberti, P., and M. Ciappa. "Selective Wet-Etch of Silicon Nitride Passivation Layers." In ISTFA 1998. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.istfa1998p0429.

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Abstract Selective removal of silicon nitride passivation layers is of major importance in failure analysis of semiconductor devices. Typical applications are: cleaning of the die surface for optical microsccjpy and for removal of superficial contamination, electron microscopy, liquid crystals, voltage contrast, electron beam testing, mechanical microprobing, and . selective layer-by-layer strip. A new wet-etch for silicon nitride passivation layers has been developed, which is fully selective! over aluminum metallization and which preserves full device functionality after passivation removal. For the first time in the failure analysis literature, the chemical recipe and the etching procedure are given in details. This etchant has been experimented for more than two years in many failure analysis laboratories on a wide spectrum of discrete and integrated semiconductor devices, always with excellent results. Its capability and efficiency are illustrated by two failure analysis case histories.

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