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Journal articles on the topic 'Spin Injector'

Author: Grafiati

Published: 6 September 2023

Last updated: 8 June 2024

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1

Chen, Zhigao, Baigeng Wang, D. Y. Xing, and Jian Wang. "A spin injector." Applied Physics Letters 85, no. 13 (2004): 2553–55. http://dx.doi.org/10.1063/1.1793335.

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2

Tao, Bingshan, Philippe Barate, Xavier Devaux, et al. "Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence." Nanoscale 10, no. 21 (2018): 10213–20. http://dx.doi.org/10.1039/c8nr02250j.

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3

WANG, Y., A. P. LIU, J. BAO, X. G. XU, and Y. JIANG. "SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR." Modern Physics Letters B 22, no. 16 (2008): 1535–45. http://dx.doi.org/10.1142/s0217984908016273.

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In this paper, large spin polarization and magnetoconductance in a ferromagnet (FM)/ferromagnetic insulator (FI)/two-dimensional electron gas (2DEG)/non-magnetic insulator (I)/FM hybrid structure are theoretically predicted by introducing a spin-filtering injector. In the framework of coherent tunneling model, the electron transmission probability, spin polarization and magnetoconductance in the hybrid structure all oscillate with the electron density within the 2DEG channel. A complete single-mode spin injection would be realized by designing a well-defined geometry to adjust the competition

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4

Chi, Feng, Xiao-Ning Dai, and Lian-Liang Sun. "A quantum dot spin injector with spin bias." Applied Physics Letters 96, no. 8 (2010): 082102. http://dx.doi.org/10.1063/1.3327807.

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5

Ariki, Taisei, Tatsuya Nomura, Kohei Ohnishi, and Takashi Kimura. "Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel." Journal of Physics D: Applied Physics 55, no. 9 (2021): 095302. http://dx.doi.org/10.1088/1361-6463/ac34aa.

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Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin abs

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6

Ved M. V., Dorokhin M. V., Lesnikov V. P., et al. "Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor." Technical Physics Letters 48, no. 13 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.

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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.

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7

Giazotto, F., and F. S. Bergeret. "Quantum interference hybrid spin-current injector." Applied Physics Letters 102, no. 16 (2013): 162406. http://dx.doi.org/10.1063/1.4802953.

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8

Salis, G., R. Wang, X. Jiang, et al. "Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector." Applied Physics Letters 87, no. 26 (2005): 262503. http://dx.doi.org/10.1063/1.2149369.

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9

Zholud, A., and S. Urazhdin. "Microwave generation by spin Hall nanooscillators with nanopatterned spin injector." Applied Physics Letters 105, no. 11 (2014): 112404. http://dx.doi.org/10.1063/1.4896023.

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10

Zozoulenko, I. V., and M. Evaldsson. "Quantum antidot as a controllable spin injector and spin filter." Applied Physics Letters 85, no. 15 (2004): 3136–38. http://dx.doi.org/10.1063/1.1804249.

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11

Patil, Tarkeshwar C. "Ferromagnetic Schottky Contact for GaN Based Spin Devices." WSEAS TRANSACTIONS ON ELECTRONICS 12 (August 2, 2021): 55–60. http://dx.doi.org/10.37394/232017.2021.12.8.

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In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices

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12

Ведь, М. В., М. В. Дорохин, В. П. Лесников та ін. "Циркулярно поляризованная электролюминесценция спиновых светодиодов c ферромагнитным инжектором (In,Fe)Sb". Письма в журнал технической физики 46, № 14 (2020): 17. http://dx.doi.org/10.21883/pjtf.2020.14.49660.18313.

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The possibility of using a diluted magnetic semiconductor (In,Fe)Sb as a functional layer for use in spintronics, namely, as a ferromagnetic injector in a spin light emitting diode, has been investigated. We studied the luminescent characteristics, as well as the temperature dependence of the circular polarization degree of a spin LED electroluminescence with an (In,Fe)Sb injector.

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13

Saito, H., J. C. Le Breton, V. Zayets, Y. Mineno, S. Yuasa, and K. Ando. "Efficient spin injection into semiconductor from an Fe/GaOx tunnel injector." Applied Physics Letters 96, no. 1 (2010): 012501. http://dx.doi.org/10.1063/1.3282799.

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14

Nishizawa, Nozomi, Kazuhiro Nishibayashi, and Hiro Munekata. "Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes." Proceedings of the National Academy of Sciences 114, no. 8 (2017): 1783–88. http://dx.doi.org/10.1073/pnas.1609839114.

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We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOxspin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas

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15

Slobodskyy, A., C. Gould, T. Slobodskyy, G. Schmidt, L. W. Molenkamp, and D. Sánchez. "Resonant tunneling diode with spin polarized injector." Applied Physics Letters 90, no. 12 (2007): 122109. http://dx.doi.org/10.1063/1.2715120.

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16

Wang, R., X. Jiang, R. M. Shelby, et al. "Increase in spin injection efficiency of a CoFe∕MgO(100) tunnel spin injector with thermal annealing." Applied Physics Letters 86, no. 5 (2005): 052901. http://dx.doi.org/10.1063/1.1787896.

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17

Höink, V., J. W. Lau, and W. F. Egelhoff. "Micromagnetic simulations of a dual-injector spin transfer torque operated spin logic." Applied Physics Letters 96, no. 14 (2010): 142508. http://dx.doi.org/10.1063/1.3373588.

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18

Tao, B. S., P. Barate, J. Frougier, et al. "Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector." Applied Physics Letters 108, no. 15 (2016): 152404. http://dx.doi.org/10.1063/1.4945768.

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19

Haidar, S. M., R. Iguchi, A. Yagmur, J. Lustikova, Y. Shiomi, and E. Saitoh. "Reducing galvanomagnetic effects in spin pumping measurement with Co75Fe25 as a spin injector." Journal of Applied Physics 117, no. 18 (2015): 183906. http://dx.doi.org/10.1063/1.4921359.

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20

Yuan, Si-Peng, Chao Shen, Hou-Zhi Zheng, et al. "Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector." Chinese Physics B 22, no. 4 (2013): 047202. http://dx.doi.org/10.1088/1674-1056/22/4/047202.

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21

Rykov, A. V., M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, and M. V. Ved’. "Temperature stabilization of spin-LEDs with a CoPt injector." Journal of Physics: Conference Series 816 (March 2017): 012034. http://dx.doi.org/10.1088/1742-6596/816/1/012034.

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22

Dao, T. Phuong, Marvin Müller, Zhaochu Luo, et al. "Chiral Domain Wall Injector Driven by Spin–Orbit Torques." Nano Letters 19, no. 9 (2019): 5930–37. http://dx.doi.org/10.1021/acs.nanolett.9b01504.

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23

Mathew, Shinto P., Prakash Chandra Mondal, Hagay Moshe, Yitzhak Mastai, and Ron Naaman. "Non-magnetic organic/inorganic spin injector at room temperature." Applied Physics Letters 105, no. 24 (2014): 242408. http://dx.doi.org/10.1063/1.4904941.

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24

Csonka, Szabolcs, Ireneusz Weymann, and Gergely Zarand. "An electrically controlled quantum dot based spin current injector." Nanoscale 4, no. 12 (2012): 3635. http://dx.doi.org/10.1039/c2nr30399j.

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25

Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.

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26

Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.

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27

Zou, J., I. Sosnin, and V. T. Petrashov. "Double-injector source of spin polarized current with controllable polarization." Applied Physics Letters 89, no. 2 (2006): 023505. http://dx.doi.org/10.1063/1.2220547.

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28

Bala Kumar, S., S. G. Tan, M. B. A. Jalil, and J. Guo. "Nanopillar ferromagnetic nanostructure as highly efficient spin injector into semiconductor." Applied Physics Letters 91, no. 14 (2007): 142110. http://dx.doi.org/10.1063/1.2795341.

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29

Ando, K., S. Takahashi, J. Ieda, et al. "Electrically tunable spin injector free from the impedance mismatch problem." Nature Materials 10, no. 9 (2011): 655–59. http://dx.doi.org/10.1038/nmat3052.

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30

Lorenzon, Wolfgang. "Opportunities with Polarized Hadron Beams." International Journal of Modern Physics: Conference Series 40 (January 2016): 1660108. http://dx.doi.org/10.1142/s2010194516601083.

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Spin physics at future hadron facilities provide unique opportunities for the study of QCD well beyond those available at existing facilities. Opportunities with polarized protons in the Fermilab Main Injector are discussed that encompass polarized Drell-Yan scattering of unprecedented precision and also enable measurements of transversity, helicty and other transverse momentum dependent distributions. Forthcoming measurements at COMPASS-II that aim to test fundamental predictions of non-perturbative QCD, and complementary studies at RHIC-Spin that address, among others, open puzzles such as t

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31

Maji, Nilay, Bishnu Chakraborty, and Tapan Kumar Nath. "Experimental demonstration of electrical spin injection into semiconductor employing conventional three-terminal and non-local Hanle devices using spin gapless semiconductor as ferromagnetic injector." Applied Physics Letters 122, no. 9 (2023): 092404. http://dx.doi.org/10.1063/5.0133013.

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Here, the deposition of a polycrystalline thin film of a noble promising alloy Ti2CoSi (TCS) on a p-Si substrate has been reported, and its spin gapless semiconducting characteristics have been investigated experimentally. The structural, magnetic, and electronic transport features of the TCS film have been investigated in detail followed by its implementation as a ferromagnetic tunnel contact for proficient spin accumulation into a semiconductor employing both conventional three-terminal and non-local (NL) Hanle measurements. As we can avoid noticing erroneous effects like anisotropic magneto

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32

Wu, Hao, HouZhi Zheng, Jian Liu, et al. "Spin injection in the multiple quantum-well LED structure with the Fe/AlO x injector." Science China Physics, Mechanics and Astronomy 53, no. 4 (2010): 649–53. http://dx.doi.org/10.1007/s11433-010-0164-4.

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33

Borukhovich, Arnold S. "Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics." Modern Electronic Materials 6, no. 3 (2020): 113–23. http://dx.doi.org/10.3897/j.moem.6.54583.

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The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.

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34

Borukhovich, Arnold S. "Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics." Modern Electronic Materials 6, no. 3 (2020): 113–23. http://dx.doi.org/10.3897/j.moem.6.3.54583.

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The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.

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35

Jiang, X., R. Wang, R. M. Shelby, and S. S. P. Parkin. "Highly efficient room-temperature tunnel spin injector using CoFe/MgO(001)." IBM Journal of Research and Development 50, no. 1 (2006): 111–20. http://dx.doi.org/10.1147/rd.501.0111.

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36

Ramdani, R. M., E. Gil, Y. Andre, et al. "Selective epitaxial growth of GaAs tips for local spin injector applications." Journal of Crystal Growth 306, no. 1 (2007): 111–16. http://dx.doi.org/10.1016/j.jcrysgro.2007.03.024.

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37

Arscott, Steve, Emilien Peytavit, Duong Vu, Alistair C. H. Rowe, and Daniel Paget. "Fluidic assembly of hybrid MEMS: a GaAs-based microcantilever spin injector." Journal of Micromechanics and Microengineering 20, no. 12 (2010): 129803. http://dx.doi.org/10.1088/0960-1317/20/12/129803.

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38

Arscott, Steve, Emilien Peytavit, Duong Vu, Alistair C. H. Rowe, and Daniel Paget. "Fluidic assembly of hybrid MEMS: a GaAs-based microcantilever spin injector." Journal of Micromechanics and Microengineering 20, no. 2 (2010): 025023. http://dx.doi.org/10.1088/0960-1317/20/2/025023.

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39

Zhang, Zheng-Zhong, and Hao Liu. "Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet*." Chinese Physics B 30, no. 6 (2021): 067501. http://dx.doi.org/10.1088/1674-1056/abd9b1.

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40

Ye, Cheng-Zhi, Yi-Hang Nie, and Jiu-Qing Liang. "A pure spin-current injector of semiconductor quantum dots with Andreev reflection and Rashba spin—orbit coupling." Chinese Physics B 20, no. 12 (2011): 127202. http://dx.doi.org/10.1088/1674-1056/20/12/127202.

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41

Ведь, М. В., М. В. Дорохин, В. П. Лесников та ін. "Циркулярно поляризованная электролюминесценция при комнатной температуре в гетероструктурах на основе разбавленного магнитного полупроводника GaAs:Fe". Письма в журнал технической физики 47, № 20 (2021): 38. http://dx.doi.org/10.21883/pjtf.2021.20.51613.18836.

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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature.

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42

Arscott, Steve, Emilien Peytavit, Duong Vu, Alistair C. H. Rowe, and Daniel Paget. "GaAs spin injector microcantilever probe assembly via a releasable “epitaxial patch technology”." Procedia Engineering 5 (2010): 1039–42. http://dx.doi.org/10.1016/j.proeng.2010.09.287.

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43

Kwon, J., R. E. Goacher, E. D. Fraser, et al. "Study of MnAs as a Spin Injector for GaAs-Based Semiconductor Heterostructures." Journal of Low Temperature Physics 169, no. 5-6 (2012): 377–85. http://dx.doi.org/10.1007/s10909-012-0674-8.

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44

Schröter, Niels B. M., Iñigo Robredo, Sebastian Klemenz, et al. "Weyl fermions, Fermi arcs, and minority-spin carriers in ferromagnetic CoS2." Science Advances 6, no. 51 (2020): eabd5000. http://dx.doi.org/10.1126/sciadv.abd5000.

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Magnetic Weyl semimetals are a newly discovered class of topological materials that may serve as a platform for exotic phenomena, such as axion insulators or the quantum anomalous Hall effect. Here, we use angle-resolved photoelectron spectroscopy and ab initio calculations to discover Weyl cones in CoS2, a ferromagnet with pyrite structure that has been long studied as a candidate for half-metallicity, which makes it an attractive material for spintronic devices. We directly observe the topological Fermi arc surface states that link the Weyl nodes, which will influence the performance of CoS2

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45

Venkatachalam, Palaniappan, Srikrishna Sahu, and Kameswararao Anupindi. "Numerical investigation on the role of a mixer on spray impingement and mixing in channel cross-stream airflow." Physics of Fluids 34, no. 3 (2022): 033316. http://dx.doi.org/10.1063/5.0083960.

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The present study numerically investigates the influence of introducing a spin-type mixer and different angular orientations of the mixer blades on the spray-wall interaction and mixing, following cross-stream injection of a pulsed spray into airflow in a circular duct. This is relevant to the Selective Catalytic Reduction system in diesel engines for exhaust gas after-treatment. The spin-type static mixer is located downstream of the injector and generates a swirling airflow in the duct. All simulations were carried out using ANSYS Fluent V18.0. The standard k– ω model is used to simulate the

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46

Dorokhin, M. V., Y. A. Danilov, Alexei V. Kudrin, E. I. Malysheva, M. M. Prokof’eva, and B. N. Zvonkov. "Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer." Solid State Phenomena 190 (June 2012): 89–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.190.89.

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The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

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47

Kemei, S. K., M. S. K. Kirui, F. G. Ndiritu, et al. "Young’s modulus and creep compliance of GaAs and Ga1-xMnxAs ferromagnetic thin films under thermal stress at varied manganese doping levels." Materials Science-Poland 33, no. 2 (2015): 340–47. http://dx.doi.org/10.1515/msp-2015-0053.

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AbstractDynamical mechanical analysis yields information about the mechanical properties of a material as a function of deforming factors, such as temperature, oscillating stress and strain amplitudes. GaAs and Mn-doped GaAs at varied levels, used in making electronic devices, suffer from damage due to changes in environmental temperatures. This is a defective factor experienced during winter and summer seasons. Hence, there was a need to establish the best amount of manganese to be doped in GaAs so as to obtain a mechanically stable spin injector material to make electronic devices. Mechanica

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48

Ved, M. V., M. V. Dorokhin, V. P. Lesnikov, et al. "Circularly Polarized Electroluminescence of Spin LEDs with a Ferromagnetic (In, Fe)Sb Injector." Technical Physics Letters 46, no. 7 (2020): 691–94. http://dx.doi.org/10.1134/s1063785020070299.

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49

Terent'ev, Ya V., A. A. Toropov, S. V. Sorokin, et al. "Semimagnetic ZnMnSe/CdSe Fractional Monolayer Superlattice as an Injector of Spin-Polarized Carriers." physica status solidi (b) 229, no. 2 (2002): 765–68. http://dx.doi.org/10.1002/1521-3951(200201)229:2<765::aid-pssb765>3.0.co;2-#.

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50

Reza, Ahmed Kamal, and Kaushik Roy. "Topological semi-metal Na3Bi as efficient spin injector in current driven magnetic tunnel junction." Journal of Applied Physics 126, no. 23 (2019): 233901. http://dx.doi.org/10.1063/1.5087077.

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