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Journal articles on the topic 'Spin-Valley Coupling'

Author: Grafiati
Published: 7 June 2025
Last updated: 2 August 2025

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1

Duan, Xiaoyang, Bo Wang, Kexiu Rong, et al. "Valley-addressable monolayer lasing through spin-controlled Berry phase photonic cavities." Science 381, no. 6665 (2023): 1429–32. http://dx.doi.org/10.1126/science.adi7196.

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The spin-valley coupling between circularly polarized light and valley excitons in transition metal dichalcogenides provides the opportunity to generate and manipulate spin information by exploiting the valley degree of freedom. Here, we demonstrate a room-temperature valley-addressable tungsten disulfide monolayer laser in which the spin of lasing is controlled by the spin of pump without magnetic fields. This effect was achieved by integrating a tungsten disulfide monolayer into a photonic cavity that supports two orthogonal spin modes with high quality factors. The spin-pumped lasing effect
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2

Morpurgo, Alberto F. "Gate control of spin-valley coupling." Nature Physics 9, no. 9 (2013): 532–33. http://dx.doi.org/10.1038/nphys2706.

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3

Ji, Yanli, Xiaocha Wang, and Wenbo Mi. "Spin–orbit coupling induced spin polarized valley states in SrRuO3/BiIrO3 heterostructures." Physical Chemistry Chemical Physics 20, no. 38 (2018): 24768–74. http://dx.doi.org/10.1039/c8cp04336a.

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The valley polarization in SrRuO<sub>3</sub> and BiIrO<sub>3</sub> can be achieved with spin–orbit coupling, and tuning the Fermi level to the VBM can induce longitudinal transport with both spin and valley polarizations in SrRuO<sub>3</sub>.
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4

Guo, San-Dong, and Yu-Tong Zhu. "Spin-valley-coupled quantum spin Hall insulator with topological Rashba-splitting edge states in Janus monolayer CSb1.5Bi1.5." Journal of Physics: Condensed Matter 34, no. 23 (2022): 235501. http://dx.doi.org/10.1088/1361-648x/ac5313.

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Abstract Achieving combination of spin and valley polarized states with topological insulating phase is pregnant to promote the fantastic integration of topological physics, spintronics and valleytronics. In this work, a spin-valley-coupled quantum spin Hall insulator (svc-QSHI) is predicted in Janus monolayer CSb1.5Bi1.5 with dynamic, mechanical and thermal stabilities. Calculated results show that the CSb1.5Bi1.5 is a direct band gap semiconductor with and without spin–orbit coupling, and the conduction-band minimum and valence-band maximum are at valley point. The inequivalent valleys have
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5

Mekonnen, Sintayehu, and Pooran Singh. "Dopant Introduced Valley Polarization, Spin, and Valley Hall Conductivity in Doped Monolayer MoS2." Advances in Condensed Matter Physics 2018 (August 1, 2018): 1–7. http://dx.doi.org/10.1155/2018/1303816.

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We study valley polarization, spin, and valley Hall conductivity in doped monolayer MoS2 considering dopant introduced magnetic exchange field using low energy effective Hamiltonian. We found that dopant introduced magnetic exchange field breaks the time inversion symmetry and decouples the energetically degenerated valleys into nondegenerate. Moreover, the calculated result reveals that, at low temperature, in insulating regime, anomalous Hall conductivity in a single valley and the total valley Hall conductivity are quantized, whereas the total spin Hall conductivity vanishes identically. We
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6

Ai, Haoqiang, Di Liu, Jiazhong Geng, Shuangpeng Wang, Kin Ho Lo, and Hui Pan. "Theoretical evidence of the spin–valley coupling and valley polarization in two-dimensional MoSi2X4 (X = N, P, and As)." Physical Chemistry Chemical Physics 23, no. 4 (2021): 3144–51. http://dx.doi.org/10.1039/d0cp05926a.

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7

Gowdini, S., and F. Kanjouri. "Generation of pure spin-valley beams at controllable angles by gate voltage in monolayer molybdenum disulfide." Physica Scripta 97, no. 5 (2022): 055801. http://dx.doi.org/10.1088/1402-4896/ac5d6f.

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Abstract Strong spin–orbit coupling and lack of inversion symmetry in monolayer transition metal dechalcogenides has made these materials as a promising candidate for both spintronic and valleytronic applications. We investigate the effect of adjustable parameters on quantum transmission of electrons through a magnetic barrier on MoS2 monolayer and introduce selection rules for generation of perfectly polarized spin-valley beams in various directions. These selection rules provide an efficient tool for versatile electrical manipulation of spin-valley beams in two-dimensional structures.
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8

Wang, Xinhe, Wei Yang, Wang Yang, et al. "Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2." Applied Physics Reviews 9, no. 3 (2022): 031402. http://dx.doi.org/10.1063/5.0089162.

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The phenomenon originating from spin–orbit coupling provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and the resulting electric field induce a Rashba-type spin–orbit field (SOF), which has been demonstrated to generate spin–orbit torque for data storage applications. In this study, we found that spin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 at room temperature, which manifests as a negative magnetoresistance in the vertical spin valve. Quantum transmission calculations based on an effective mo
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9

Ildarabadi, Fereshte, and Rouhollah Farghadan. "Fully spin-valley-polarized current induced by electric field in zigzag stanene and germanene nanoribbons." Physical Chemistry Chemical Physics 23, no. 10 (2021): 6084–90. http://dx.doi.org/10.1039/d0cp05951j.

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Fully spin-valley-polarized current can be produced in zigzag stanene and germanene nanoribbons with large intrinsic spin–orbit coupling, considering the electron–electron interaction (U) and the external electric field (E<sub>z</sub>) at room temperature.
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10

Abdollahi, Mahsa, and Meysam Bagheri Tagani. "Janus 2H-VSSe monolayer: two-dimensional valleytronic semiconductor with nonvolatile valley polarization." Journal of Physics: Condensed Matter 34, no. 18 (2022): 185702. http://dx.doi.org/10.1088/1361-648x/ac506f.

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Abstract Valleytronic as a hot topic in recent years focuses on electrons’ valley degree of freedom as a quantum information carrier. Here, by combining two-band k.p model with high-throughput density functional theory (DFT) calculations, the valley states of Janus 2H-VSSe monolayer are studied which have spontaneous polarization. Nonvolatile valley polarization state is mainly arises from intrinsic ferromagnetism contributed by V-3d electronic configuration and not the spontaneous out-of-plane dipole moment of VSSe monolayer. The effective Hamiltonian model and DFT calculations both showed th
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11

Chen, Liang. "Hall effects in monolayer MoS2 with spin-orbit coupling under the shining of a circularly polarized light." Modern Physics Letters B 34, no. 16 (2020): 2050181. http://dx.doi.org/10.1142/s021798492050181x.

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In this paper, we study Hall effects of the monolayer MoS2 with Rashba and Ising spin-orbit coupling (SOC) under the application of a circularly polarized light. The Chern number and spin textures at high frequency regime are studied based on the Floquet theory. We found that the SOCs induced valley Hall effect. The sign of Chern numbers at high frequency regime can be reversed by engineering interplay between Ising SOC and light intensity. The system undergoes a topological phase transition from valley Hall state to anomalous Hall state. By analyzing the spin texture, we study the origin of t
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12

Guo, Jiatian, Zhutong Lu, Keyu Wang, et al. "Large valley polarization in a novel two-dimensional semiconductor H-ZrX2 (X = Cl, Br, I)." Journal of Physics: Condensed Matter 34, no. 7 (2021): 075701. http://dx.doi.org/10.1088/1361-648x/ac394f.

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Abstract Inspired by the new progress in the research field of two-dimensional valleytronics materials, we propose a new class of transition metal halides, i.e. H-ZrX2 (X = Cl, Br, I), and investigated their valleytronics properties under the first-principles calculations. It harbors the spin-valley coupling at K and K′ points in the top of valence band, in which the valley spin splitting of ZrI2 can reach up to 115 meV. By carrying out the strain engineering, the valley spin splitting and Berry curvature can be effectively tuned. The long-sought valley polarization reaches up to 108 meV by do
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13

He, Kaiyuan, and Peiji Wang. "Prediction of Intriguing Valley Properties in Two-Dimensional Hf2TeIX (X = I, Br) Monolayers." Crystals 14, no. 9 (2024): 794. http://dx.doi.org/10.3390/cryst14090794.

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The valley degree of freedom, as a new information carrier, is important for basic physical research and the development of advanced devices. Herein, using first-principle calculations, we predict that two-dimensional Hf2TeIX (X = I, Br) monolayers harbor intriguing valley properties. Without considering spin–orbit coupling (SOC), the Hf2TeI2 monolayer has a semi-metallic nature, with Dirac cones located at the high-symmetry point K, and feature, with considerable Fermi velocity. When the SOC is taken into account, a band gap opening of 271 meV can be observed at the Dirac cones. More interest
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14

Li, Shuo, Junjie He, Lukáš Grajciar, and Petr Nachtigall. "Intrinsic valley polarization in 2D magnetic MXenes: surface engineering induced spin-valley coupling." Journal of Materials Chemistry C 9, no. 34 (2021): 11132–41. http://dx.doi.org/10.1039/d1tc02837e.

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15

WANG, W., M. H. ZHANG, H. LI, and J. CHENG. "TIGHT-BINDING BAND STRUCTURE AND SPIN-ORBIT SPLITTING FOR BULK InP." Modern Physics Letters B 24, no. 28 (2010): 2815–20. http://dx.doi.org/10.1142/s0217984910025073.

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The band structure of InP is excellently produced using sp3d5s* tight-binding model. The spin-orbit splitting in the whole Brillouin zone derived from the InP Γ-valley of the lowest electronic subband, heavy hole, light hole and split-off hole is calculated. Considering the hot electron effect, the cases of L and X-valleys for the lowest electronic subband are also discussed. We then further present the electron spin-orbit coupling coefficient around the corresponding valley bottom. Our results should provide a promising direction for future research on spintronics.
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16

Lee, Yeon, Dasol Kim, Dong-Eon Kim, and Alexis Chacón. "High Harmonic Generation in Monolayer and Bilayer of Transition Metal Dichalcogenide." Symmetry 13, no. 12 (2021): 2403. http://dx.doi.org/10.3390/sym13122403.

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In transition metal dichalcogenides (TMDCs), charge carriers have spin, pseudospin, and valley degrees of freedom associated with magnetic moments. The monolayers and bilayers of the TMDCs, in particular, MoS2, lead to strong couplings between the spin and pseudospin effects. This feature has drawn attention to TMDCs for their potential use in advanced tech devices. Meanwhile, high-order harmonic generation (HHG) has recently been applied to the characterization of the electronic structure of solids, such as energy dispersion, Berry-curvature, and topological properties. Here, we show theoreti
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17

Shen, K., J. Y. Fu, and M. W. Wu. "Spin–orbit coupling and -factor of -valley in cubic GaN." Solid State Communications 151, no. 24 (2011): 1924–26. http://dx.doi.org/10.1016/j.ssc.2011.09.019.

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18

Gong, Su-Hyun, Filippo Alpeggiani, Beniamino Sciacca, Erik C. Garnett, and L. Kuipers. "Nanoscale chiral valley-photon interface through optical spin-orbit coupling." Science 359, no. 6374 (2018): 443–47. http://dx.doi.org/10.1126/science.aan8010.

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19

Liu, Yuxin, Fanzheng Chen, Guichao Hu, Xiuwen Zhao, Xiaobo Yuan, and Junfeng Ren. "Tunable layer-locked valley Hall effect in ferroelectric-magnetic-valley coupled breathing Kagome bilayer W3Br8." Applied Physics Letters 126, no. 13 (2025). https://doi.org/10.1063/5.0257819.

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Based on an effective k·p model, we form breathing Kagome bilayers with two different interlayer antiferroelectric (AFE) couplings, i.e., tail to tail and head to head, to study their magnetic and valley properties. Spin–orbit coupling and magnetic exchange interaction induce valley-layer locking when the bilayer is ferromagnetic, however, spin-layer locking appears for the case of antiferromagnetic states. The inequivalent interlayer antiferroelectric couplings correspond to different magnetic ground states, and the antiferroelectric states can be switched through the breathing process, so th
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20

Lin, Hai, Guanyu Zhang, Guodong Xue, et al. "Steering Nonlinear Chiral Valley Photons Through Optical Orbit–Orbit Coupling." Laser & Photonics Reviews, November 6, 2024. http://dx.doi.org/10.1002/lpor.202400545.

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AbstractTwo‐dimensional transition metal dichalcogenides feature a direct tunable bandgap and robust spin‐valley coupling, offering an additional valley degree of freedom for information carriers. While optical spin‐orbit coupling has traditionally facilitated valley manipulation, on‐chip control of nonlinear valley photons remains elusive. Here, the directional coupling of nonlinear chiral valley photons through optical orbit‐orbit coupling in monolayer tungsten disulfide at room temperature is demonstrated. The chirality of nonlinear valley photons is governed by the spin angular momentum of
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21

Tao, Lingling. "Perspectives of spin-valley locking devices." Chinese Physics B, March 28, 2023. http://dx.doi.org/10.1088/1674-1056/acc809.

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Abstract Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information. However, it is technically nontrivial to produce a stable valley polarization and to achieve efficient control and manipulation of valleys. Spin-valley locking refers to the coupling between spin and valley degree of freedoms in the materials with large spin-orbit coupling (SOC) and enables the manipulation of valleys indirectly through controlling spins. Here, we review the recent advances in spin-valley locking physics and outline possible device implications. In particu
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22

Kondo, Masaki, Masayuki Ochi, Tatsuhiro Kojima, et al. "Tunable spin-valley coupling in layered polar Dirac metals." Communications Materials 2, no. 1 (2021). http://dx.doi.org/10.1038/s43246-021-00152-z.

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AbstractIn non-centrosymmetric metals, spin-orbit coupling induces momentum-dependent spin polarization at the Fermi surfaces. This is exemplified by the valley-contrasting spin polarization in monolayer transition metal dichalcogenides with in-plane inversion asymmetry. However, the valley configuration of massive Dirac fermions in transition metal dichalcogenides is fixed by the graphene-like structure, which limits the variety of spin-valley coupling. Here, we show that the layered polar metal BaMnX2 (X = Bi, Sb) hosts tunable spin-valley-coupled Dirac fermions, which originate from the dis
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23

Niu, Zhi Ping, and Yong-Mei Zhang. "Electrically controlled crossed Andreev reflection in altermagnet/superconductor/altermagnet junctions." Superconductor Science and Technology, April 16, 2024. http://dx.doi.org/10.1088/1361-6668/ad3f56.

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Abstract Altermagnets are a novel class of magnetic materials with a significant non-relativistic spin splitting band structure but zero net macroscopic magnetization. We here investigate the interplay between altermagnetism and superconductivity and how the band structures of the altermagnet affect nonlocal transport through altermagnet/superconductor/altermagnet junctions. The two types of spin-momentum coupling: anisotropic and valley-dependent spin-momentum couplings are considered. The pure crossed Andreev reflection (CAR) can be observed by tuning the chemical potential and a switch effe
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24

Wu, Qing-Ping, Zheng-Fang Liu, Ai-Xi Chen, Xian-Bo Xiao, and Zhi-Min Liu. "Full Valley and Spin Polarizations in Strained Graphene with Rashba Spin Orbit Coupling and Magnetic Barrier." Scientific Reports 6, no. 1 (2016). http://dx.doi.org/10.1038/srep21590.

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Abstract We propose a graphene-based full valley- and spin-polarization device based on strained graphene with Rashba spin orbit coupling and magnetic barrier. The underlying mechanism is the coexistence of the valley and single spin band gaps in a certain Fermi energy. By aligning the Fermi energy in the valley and single spin band gaps, remarkable valley- and spin-polarization currents can be accessed.
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25

Banszerus, L., S. Möller, C. Steiner, et al. "Spin-valley coupling in single-electron bilayer graphene quantum dots." Nature Communications 12, no. 1 (2021). http://dx.doi.org/10.1038/s41467-021-25498-3.

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AbstractUnderstanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems, is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enable to study the low-energy single-electron spectra in BLG quantum dots, which is crucial for potential spin and spin-valley qubit operations. Here, we present the observation of the spin-valley coupling in bilayer graphene quantum dots in the single-electron
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26

Li, Yang, Wen Zeng, and Rui Shen. "Spin-valley-polarized Weiss oscillations in monolayer 1{\it T}$^{\prime}$-\ce{MoS2}." Physica Scripta, February 19, 2025. https://doi.org/10.1088/1402-4896/adb817.

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Abstract Monolayer 1{\it T}$^{\prime}$-\ce{MoS2} exhibits spin- and valley-dependent massive tilted Dirac cones with two velocity correction terms in low-energy effective Hamiltonian. We theoretically investigate the longitudinal diffusive magnetoconductivity of monolayer 1{\it T}$^{\prime}$-\ce{MoS2} by using the linear response theory. It is shown that, when the Fermi level is close to the spin-orbit coupling gap, the Weiss oscillation splits into two branches and exhibits spin-valley polarization in the presence of both a spatial periodic electric potential modulation in the lateral directi
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27

Hajati, Yaser, Mohammad Alipourzadeh, Imam Makhfudz та Jamal Berakdar. "Electromagnetically tunable spin-valley-polarized current via anomalous Nernst effect in monolayer of jacutingaite". Journal of Physics: Condensed Matter, 8 листопада 2024. http://dx.doi.org/10.1088/1361-648x/ad9070.

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Abstract Monolayer jacutingaite (Pt2HgSe3) exhibits remarkable properties, including significant spin-orbit coupling and a tunable band gap, attributed to its buckled honeycomb geometry and the presence of heavy atoms. In this study, we explore the spin- and valley-dependent anomalous Nernst effect (ANE) in jacutingaite under the influence of a vertical electric field, off-resonance circularly polarized light (OCPL), and an antiferromagnetic exchange field. Our findings, within the low-energy approximation, reveal the emergence of a perfectly spin-polarized ANE with the application of appropriate OCP
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28

Jana, Koustav, and Bhaskaran Muralidharan. "Robust all-electrical topological valley filtering using monolayer 2D-Xenes." npj 2D Materials and Applications 6, no. 1 (2022). http://dx.doi.org/10.1038/s41699-022-00291-y.

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AbstractWe propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin–orbit coupling. In contrast with conventional quantum spin-Hall edge states localized around the X-points, the interface states appearing at the domain wall between topologically distinct phases are either from the K or $$K^{\prime}$$ K ′ points, making them suitable prospects for serving as valley-polarized channels. We show that the presence of a large band-gap quantum spin-Hall effec
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29

Dutta, Soma, Sajid Husain, Prabhat Kumar, et al. "Manipulating ultrafast magnetization dynamics of ferromagnets using the odd-even layer of two-dimensional transition metal di-chalcogenides." Nanoscale, 2024. http://dx.doi.org/10.1039/d3nr06197c.

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Two-dimensional transition metal dichalcogenides (TMDs) have drawn immense interest due to the strong spin-orbit coupling and unique layer number dependence in response to spin-valley coupling. This leads to the possibility...
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30

Sattari, Farhad, and Soghra Mirershadi. "Effect of the strain on spin-valley transport properties in MoS2 superlattice." Scientific Reports 11, no. 1 (2021). http://dx.doi.org/10.1038/s41598-021-97189-4.

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AbstractThe effect of the strain on the spin and valley dependent transport properties, including the conductance and polarization, through a monolayer MoS2 superlattice under Rashba spin–orbit coupling is theoretically investigated. It is found that the conductance strongly depends on the spin and valley degrees of freedom, and spin-inversion can be achieved by MoS2 superlattice. Also, the spin and valley dependent conductance in a monolayer MoS2 superlattice can be efficiently adjusted via strain and the number of the superlattice barriers. Moreover, it is demonstrated that both the magnitud
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31

Li, Rui, Jiawei Jiang, Wenbo Mi, and Haili Bai. "Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer." Nanoscale, 2021. http://dx.doi.org/10.1039/d1nr04063d.

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32

Xu, Rui, Zhiguo Zhang, Jia Liang, and Hanyu Zhu. "Valleytronics: Fundamental Challenges and Materials Beyond Transition Metal Chalcogenides." Small, November 28, 2024. http://dx.doi.org/10.1002/smll.202402139.

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AbstractValleytronics, harnessing the valley degree of freedom in the momentum space, is a potential energy‐efficient approach for information encoding, manipulation, and storage. Valley degree of freedom exists in a few conventional semiconductors, but recently the emerging 2D materials, such as monolayer transition‐metal dichalcogenides (TMDs), are considered more ideal for valleytronics, due to the additional protection from spin‐valley locking enabled by their inversion symmetry breaking and large spin‐orbit coupling. However, current limitations in the valley lifetime, operation temperatu
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33

Tang, Hong, Santosh Neupane, Li Yin, Jason M. Breslin, and Adrienn Ruzsinszky. "Spin-polarization anisotropy controlled by bending in tungsten diselenide nanoribbons and tunable excitonic states." Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d2tc05129j.

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A WSe2 monolayer shows many interesting properties due to its spin-orbit coupling induced spin splitting in bands around the Fermi level and the spin-valley configuration. The orientation of the spin...
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34

Zhao, Chunli, Jiyang Ou, Wei Tao Lu, and Zhenying Wen. "Perfect spin-valley polarization and magnetoresistance in MoS2 tunnel junction with circularly polarized light." Japanese Journal of Applied Physics, July 19, 2022. http://dx.doi.org/10.35848/1347-4065/ac825c.

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Abstract We study the spin-valley dependent transport and magnetoresistance effect in a ferromagnetic MoS2 junction modulated by the off-resonance circularly polarized light. It is found that the conductance could be 100% spin- and valley-polarized simultaneously in the P configuration. Perfect valley polarization can also be realized in the AP configuration. The spin polarization presents a oscillating behavior in AP configuration due to the spin-orbit coupling. Furthermore, the junction achieves a high magnetoresistance that can be controlled by the exchange field and the light.
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35

Qi, Yunxi, Jun Zhao, and Hui Zeng. "Tunable spin/valley splitting and multiple Hall effects in interlayer coupling-dependent SVSiN2 multiferroic bilayers." Applied Physics Letters 126, no. 11 (2025). https://doi.org/10.1063/5.0241163.

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Compared to two-dimensional (2D) monolayered ferrovalley semiconductors (FVS), 2D FVS bilayers with interlayer coupling are more sensitive to external electric fields, and their applications for valleytronics and spintronics are very promising. Using first principles calculations, we demonstrate that the valley and spin degeneracy in the SVSiN2 bilayer can be manipulated through different interlayer magnetic orders and stackings. Compared with its monolayer counterpart, the valley/spin polarization in the SVSiN2 bilayer is highly tunable by electric field. Specifically, different stackings, ma
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36

Lu, Wei-Tao, and Qingfeng Sun. "Spin polarization and Fano-Rashba resonance in nonmagnetic graphene." New Journal of Physics, April 6, 2023. http://dx.doi.org/10.1088/1367-2630/accb06.

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Abstract We study the symmetry of spin transport in graphene with the Rashba spin-orbit coupling and the staggered potential, which can be produced by depositing the graphene on a transition-metal dichalcogenides substrate. The results show that all three spin polarization components along the x, y, and z directions are achieved with a measurable conductance in such a nonmagnetic graphene. The spin transport property near the two valleys is discussed in the light of the symmetry of the system. Both conductance and spin polarization present some certain symmetries with respect to the Rashba spi
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37

Zhang, Ting-Ting, Yilin Han, Run-Wu Zhang, and Zhi-Ming Yu. "Gate-field control of valley polarization in valleytronics." Chinese Physics B, April 18, 2024. http://dx.doi.org/10.1088/1674-1056/ad401a.

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Abstract Valleytronics materials are a kind of special semiconductors, which can host multiple symmetryconnected and well-separated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations, they are endowed with an additional valley degree of freedom. Analogous to spin, the valley freedom can be used to process information, leading to the concept of valleytronics. The prerequisite for valleytronics is the generation of valley polarizat
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38

Rahimi, F., and A. Phirouznia. "Electric field induced pure spin-photo current in zigzag stanene and germanene nanoribbons." Scientific Reports 12, no. 1 (2022). http://dx.doi.org/10.1038/s41598-022-11413-3.

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AbstractThe spin-photo current in single layer stanene and germanene under a linearly polarized light is theoretically investigated based on the tight-binding Hamiltonian combined with the nonequilibrium Green’s function at room temperature. The results show that by considering the simultaneous effect of the linear illumination and a vertical external electric field without any magnetic exchange element, pure spin-photo current without charge current is generated in two-dimensional lattices with a large intrinsic spin–orbit coupling. The necessity of enhanced spin life-time for detection of sp
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39

Jo, Min‐kyung, Eunji Lee, Eoram Moon, et al. "Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation." Advanced Materials, October 6, 2024. http://dx.doi.org/10.1002/adma.202407997.

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AbstractMonolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin‐orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin‐valley locking in K or K’ valleys, the ultra‐short valley lifetime limits their room‐temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybd
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40

Lan, Mengxian, Suen Wang, Xiaoyu Liu, et al. "Large valley splitting induced by spin–orbit coupling effects in monolayer W2NSCl." Physical Chemistry Chemical Physics, 2024. http://dx.doi.org/10.1039/d3cp04832b.

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41

Murugesan, Ramasamy, Ewald Janssens, Joris Van de Vondel, Valeri Afanas'ev, and M. Houssa. "Tuning the spin texture of graphene with size-specific Cun clusters: a first-principles study." Journal of Physics: Materials, May 25, 2023. http://dx.doi.org/10.1088/2515-7639/acd8f2.

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Abstract The size dependent interaction of Cun (n = 1‒5) clusters with pristine and defective (C-vacancy) graphene is studied by employing density functional theory. The computed binding energies are in the range of ~0.5 eV for pristine graphene and ~3.5 eV for defective graphene, indicating a much stronger interaction in the later system. The induced spin-orbit coupling interaction, due to the proximity of the Cun cluster, is studied with non-collinear spin-polarized simulations. The clusters cause a spin splitting in the order of few meV. The resultant low energy bands spin textures are also
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42

Hosseinzadeh Helaleh, Shahla, Mohammad Alipourzadeh, and Yaser Hajati. "Photo-and exchange-field controlled spin and valley polarized transport in a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides." Journal of Physics D: Applied Physics, August 19, 2024. http://dx.doi.org/10.1088/1361-6463/ad70c3.

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Abstract We theoretically investigate spin- and valley-polarized transport within a normal/antiferromagnetic/normal (N/AF/N) junction based on transition metal dichalcogenides (TMDs), under the influence of off-resonance circularly polarized light and gate voltage. Antiferromagnetism modulates spin states and the effective gap, reducing the spin gap for one state while increasing it for the opposite, resulting in a broad spin polarization and a controlled gap. Off-resonance circularly polarized light adjusts the valley degree of freedom and the effective gap, providing a wide range of valley p
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43

Tian, Hongyu, ChongDan Ren, Benhu Zhou, et al. "Controllable Valley Polarization Using Silicene Double Line Defects Due to Rashba Spin-Orbit Coupling." Nanoscale Research Letters 14, no. 1 (2019). http://dx.doi.org/10.1186/s11671-019-3196-3.

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AbstractWe theoretically investigate the valley polarization in silicene with two parallel line defects due to Rashba spin-orbit coupling (RSOC). It is found that as long as RSOC exceeds the intrinsic spin-orbit coupling (SOC), the transmission coefficients of the two valleys oscillate with the same periodicity and intensity, which consists of wide transmission peaks and zero-transmission plateaus. However, in the presence of a perpendicular electric field, the oscillation periodicity of the first valley increases, whereas that of the second valley shortens, generating the corresponding wide p
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44

Lubert-Perquel, Daphné, Byeong Wook Cho, Alan J. Phillips, Young Hee Lee, Jeffrey L. Blackburn, and Justin C. Johnson. "Modulating spin-valley relaxation in WSe2 with variable thickness VOPc layers." Chemical Physics Reviews 5, no. 4 (2024). https://doi.org/10.1063/5.0238993.

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Combining the synthetic tunability of molecular compounds with the optical selection rules of transition metal dichalcogenides (TMDCs) that derive from spin-valley coupling could provide interesting opportunities for the readout of quantum information. However, little is known about the electronic and spin interactions at such interfaces and the influence on spin-valley relaxation. In this work, vanadyl phthalocyanine (VOPc) molecular layers are thermally evaporated on WSe2 to explore the effect of molecular layer thickness on excited-state spin-valley polarization. The thinnest molecular laye
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45

Huang, Chuan Shuai. "Photoinduced Spin-Polarized Transport and Controllable Valley-Triplet Pairing States in a Silicene-Superconductor Junction." Journal of Physics: Condensed Matter, February 10, 2023. http://dx.doi.org/10.1088/1361-648x/acbb4a.

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Abstract We theoretically investigate the spin-polarized subgap transport and valley-triplet pairing states in a silicene-superconductor junction. By using the nonequilibrium Green's function, it is found that the subgap conductance is strongly affected by the spin polarization induced by an off-resonant circularly polarized light. More importantly, the presence of valley-mixing scattering at the interface could result in a valley-triplet Andreev reflection (AR) process, where the incident electrons and reflected holes come from the same valley. We also find that the amplitude of the valley-tr
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46

Bhowmik, Saisab, Bhaskar Ghawri, Youngju Park, et al. "Spin-orbit coupling-enhanced valley ordering of malleable bands in twisted bilayer graphene on WSe2." Nature Communications 14, no. 1 (2023). http://dx.doi.org/10.1038/s41467-023-39855-x.

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AbstractRecent experiments in magic-angle twisted bilayer graphene have revealed a wealth of novel electronic phases as a result of interaction-driven spin-valley flavour polarisation. In this work, we investigate correlated phases due to the combined effect of spin-orbit coupling-enhanced valley polarisation and the large density of states below half filling of the moiré band in twisted bilayer graphene coupled to tungsten diselenide. We observe an anomalous Hall effect, accompanied by a series of Lifshitz transitions that are highly tunable with carrier density and magnetic field. The magnet
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47

Patil, Sourabh, Gaomin Tang, and Wolfgang Belzig. "Spectral properties of a mixed singlet-triplet Ising superconductor." Frontiers in Electronic Materials 3 (September 1, 2023). http://dx.doi.org/10.3389/femat.2023.1254302.

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Conventional two-dimensional superconductivity is destroyed when the critical in-plane magnetic field exceeds the so-called Pauli limit. Some monolayer transition-metal dichalcogenides lack inversion symmetry and the strong spin-orbit coupling leads to a valley-dependent Zeeman-like spin splitting. The resulting spin-valley locking lifts the valley degeneracy and results in a strong enhancement of the in-plane critical magnetic field. In these systems, it was predicted that the density of states in an in-plane field exhibits distinct mirage gaps at finite energies of about the spin-orbit coupl
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48

Zhao, Jinfeng, Chenwen Yang, Weitao Yuan, et al. "Elastic Valley Spin Controlled Chiral Coupling in Topological Valley Phononic Crystals." Physical Review Letters 129, no. 27 (2022). http://dx.doi.org/10.1103/physrevlett.129.275501.

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49

Sun, Yun-Lei, Guo-Hong Chen, Si-Chao Du, Zhong-Bao Chen, Yan-Wei Zhou, and En-Jia Ye. "Spin-valley polarized edge states in quasi-one-dimensional asymmetric kagome lattice." Frontiers in Physics 10 (November 10, 2022). http://dx.doi.org/10.3389/fphy.2022.1033836.

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The spin-valley-related electronic properties of quasi-one-dimensional kagome lattices with intrinsic spin-orbit coupling are studied, based on the tight-binding formalism. Three types of kagome-lattice nanoribbons along the x-direction with various geometric boundaries are proposed, including two symmetric nanoribbons and one asymmetric one. It is found that two nonequivalent Dirac cones and helical edge states exist in all the three types of kagome-lattice nanoribbons at 1/3 filling. Among them in the asymmetric nanoribbon, the spin and valley are found to be locked to each other due to inve
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50

Qu, Jinfeng, Xiangyang Peng, Di Xiao, and Jianxin Zhong. "Giant spin splitting, strong valley selective circular dichroism and valley-spin coupling induced in silicene." Physical Review B 94, no. 7 (2016). http://dx.doi.org/10.1103/physrevb.94.075418.

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