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Journal articles on the topic 'Spin valve'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Huang, Biqin, Igor Altfeder, and Ian Appelbaum. "Spin-valve phototransistor." Applied Physics Letters 90, no. 5 (January 29, 2007): 052503. http://dx.doi.org/10.1063/1.2436715.

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2

Freitas, P. P., F. Silva, N. J. Oliveira, L. V. Melo, L. Costa, and N. Almeida. "Spin valve sensors." Sensors and Actuators A: Physical 81, no. 1-3 (April 2000): 2–8. http://dx.doi.org/10.1016/s0924-4247(99)00159-4.

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3

Huang, Y. W., C. K. Lo, Y. D. Yao, L. C. Hsieh, and J. H. Huang. "Spin-valve transistor." Journal of Applied Physics 97, no. 10 (May 15, 2005): 10D504. http://dx.doi.org/10.1063/1.1852318.

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4

Appelbaum, Ian, D. J. Monsma, K. J. Russell, V. Narayanamurti, and C. M. Marcus. "Spin-valve photodiode." Applied Physics Letters 83, no. 18 (November 3, 2003): 3737–39. http://dx.doi.org/10.1063/1.1623315.

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5

Jian-Gang Zhu. "Spin valve and dual spin valve heads with synthetic antiferromagnets." IEEE Transactions on Magnetics 35, no. 2 (March 1999): 655–60. http://dx.doi.org/10.1109/20.750623.

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6

Kimura, T., J. Hamrle, Y. Otani, K. Tsukagoshi, and Y. Aoyagi. "Enhancement of nonlocal spin-valve signal using spin accumulation in local spin-valve configuration." Applied Physics Letters 85, no. 22 (November 29, 2004): 5382–84. http://dx.doi.org/10.1063/1.1829772.

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7

Hiep, Duong Dinh, Masaaki Tanaka, and Pham Nam Hai. "Inverse spin-valve effect in nanoscale Si-based spin-valve devices." Journal of Applied Physics 122, no. 22 (December 12, 2017): 223904. http://dx.doi.org/10.1063/1.4994881.

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8

Hill, E. W., A. K. Geim, K. Novoselov, F. Schedin, and P. Blake. "Graphene Spin Valve Devices." IEEE Transactions on Magnetics 42, no. 10 (October 2006): 2694–96. http://dx.doi.org/10.1109/tmag.2006.878852.

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9

Yanson, I. K., Yu G. Naidyuk, V. V. Fisun, A. Konovalenko, O. P. Balkashin, L. Yu Triputen, and V. Korenivski. "Surface Spin-Valve Effect." Nano Letters 7, no. 4 (April 2007): 927–31. http://dx.doi.org/10.1021/nl0628192.

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10

Fominov, Ya V., A. A. Golubov, T. Yu Karminskaya, M. Yu Kupriyanov, R. G. Deminov, and L. R. Tagirov. "Superconducting triplet spin valve." JETP Letters 91, no. 6 (March 2010): 308–13. http://dx.doi.org/10.1134/s002136401006010x.

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11

Bell, C., G. Burnell, C. W. Leung, E. J. Tarte, and M. G. Blamire. "Spin Valve Josephson Junctions." IEEE Transactions on Appiled Superconductivity 15, no. 2 (June 2005): 908–11. http://dx.doi.org/10.1109/tasc.2005.850112.

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12

Tang, D. D., P. K. Wang, V. S. Speriosu, S. Le, and K. K. Kung. "Spin-valve RAM cell." IEEE Transactions on Magnetics 31, no. 6 (1995): 3206–8. http://dx.doi.org/10.1109/20.490329.

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13

Appelbaum, Ian, K. J. Russell, D. J. Monsma, V. Narayanamurti, C. M. Marcus, M. P. Hanson, and A. C. Gossard. "Luminescent spin-valve transistor." Applied Physics Letters 83, no. 22 (December 2003): 4571–73. http://dx.doi.org/10.1063/1.1630838.

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14

Russell, K. J., Ian Appelbaum, Wei Yi, D. J. Monsma, F. Capasso, C. M. Marcus, V. Narayanamurti, M. P. Hanson, and A. C. Gossard. "Avalanche spin-valve transistor." Applied Physics Letters 85, no. 19 (2004): 4502. http://dx.doi.org/10.1063/1.1818339.

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15

Kumar, P. S. Anil, and J. C. Lodder. "The spin-valve transistor1." Journal of Physics D: Applied Physics 33, no. 22 (October 31, 2000): 2911–20. http://dx.doi.org/10.1088/0022-3727/33/22/307.

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16

van Staa, Alexander, and Guido Meier. "Anisotropic magnetoresistance and spin-valve effect in all-metal mesoscopic spin-valve devices." Physica E: Low-dimensional Systems and Nanostructures 31, no. 2 (March 2006): 142–47. http://dx.doi.org/10.1016/j.physe.2005.11.006.

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17

Song, Yu, and Gang Dai. "Spin filter and spin valve in ferromagnetic graphene." Applied Physics Letters 106, no. 22 (June 2015): 223104. http://dx.doi.org/10.1063/1.4921668.

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18

Hao, Runrun, Tie Zhou, Hai Zhong, Shishou Kang, Guolei Liu, Lihui Bai, Guangbing Han, Shuyun Yu, and Shishen Yan. "Spin detection using a ferromagnetic noncollinear spin valve." Journal of Magnetism and Magnetic Materials 485 (September 2019): 85–88. http://dx.doi.org/10.1016/j.jmmm.2019.04.078.

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19

Gmitra, M., D. Horváth, M. Wawrzyniak, and J. Barnaś. "Current-induced spin dynamics in spin-valve structures." physica status solidi (b) 243, no. 1 (January 2006): 219–22. http://dx.doi.org/10.1002/pssb.200562520.

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20

Tang, L., M. Xiao, D. E. Laughlin, and M. H. Kryder. "Microstructure of spin-valve mr sandwiches." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 484–85. http://dx.doi.org/10.1017/s0424820100138798.

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Giant magnetoresistance ( GMR ) effects in magnetic multilayers with spin-valve structures are under intensive investigation. The GMR effects in spin-valve structures originate from the change in the orientation of magnetization in the successive ferromagnetic layers. Of the various types of spin-valve multilayered structures reported, spin-valve sandwiches, in which one of the two ferromagnetic layers separated by a nonferromagnetic metal layer is constrained through exchange coupling to an adjacent antiferromagnetic layer, are most promising for applications in read heads for high density magnetic recording. This is due to their large MR and high sensitivity in low magnetic fields. Study of the correlation between magnetic/magnetotransport properties and the microstructure of spin-valve sandwiches is crucial for a better understanding of the mechanism of the spin-valve effects and for future MR heads design. Here, we present the results of transmission electron microscopy (TEM) studies of the microstructure of a Ni81Fe19(47Å)\Cu(18Å)\Ni81Fe19(53Å)\FeMn(186Å) spin-valve sandwich.

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21

GURNEY, B. A., V. S. SPERIOSU, H. LEFAKIS, D. R. WILHOIT, D. HEIM, R. FONTANA, C. TSANG, M. L. WILLIAMS, and T. LIN. "Spin Valve Structures and Sensors." Journal of the Magnetics Society of Japan 18, S_1_PMRC_94_1 (1994): S1_343–343. http://dx.doi.org/10.3379/jmsjmag.18.s1_343.

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22

Hill, E. W., and A. F. Nor. "Noise in spin-valve sensors." IEEE Transactions on Magnetics 37, no. 4 (July 2001): 2031–33. http://dx.doi.org/10.1109/20.951044.

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23

Szuromi, Phil. "A spin-valve solar cell." Science 357, no. 6352 (August 17, 2017): 656.18–658. http://dx.doi.org/10.1126/science.357.6352.656-r.

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24

Cho, Sungjae, Yung-Fu Chen, and Michael S. Fuhrer. "Gate-tunable graphene spin valve." Applied Physics Letters 91, no. 12 (September 17, 2007): 123105. http://dx.doi.org/10.1063/1.2784934.

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25

Avram, M., A. M. Avram, R. Vasilco, M. Volmer, A. Popescu, and A. Ghiu. "The optimised spin-valve magnetotransistor." Materials Science and Engineering: B 152, no. 1-3 (August 2008): 72–75. http://dx.doi.org/10.1016/j.mseb.2008.06.030.

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26

DAGANI, RON. "SINGLE-MOLECULE SPIN VALVE DEBUTS." Chemical & Engineering News 80, no. 16 (April 22, 2002): 7. http://dx.doi.org/10.1021/cen-v080n016.p007.

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27

Melo, L. V., L. M. Rodrigues, and P. P. Freitas. "Novel spin-valve memory architecture." IEEE Transactions on Magnetics 33, no. 5 (1997): 3295–97. http://dx.doi.org/10.1109/20.617922.

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28

Wang, Zhigang, and Yoshihisa Nakamura. "A spin-valve memory cell." Journal of Magnetism and Magnetic Materials 159, no. 1-2 (June 1996): 233–35. http://dx.doi.org/10.1016/0304-8853(96)00243-0.

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29

Bai, Ru, Zheng Hong Qian, Yu Cheng Sun, Jian Ping Li, Hua Chen Zhu, Ling Wei Li, Yuan Li, De Xuan Huo, and Hong Liang Zhan. "Effects of Different Relevant Layers on Magnetic Properties of Bottom Synthetic IrMn Spin Valves." Key Engineering Materials 562-565 (July 2013): 1467–70. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.1467.

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The effects of different relevant layers, especially the insertion layers (which are between Ta buffer layer and IrMn pinning layer) and free layers, on the magnetic properties of IrMn bottom-pinning spin valves are investigated. Spin valve with a NiFe insertion layer exhibits a higher GMR ratio of ~ 6.0% than that of 2.0% for the spin valve with a Cu insertion layer due to a better pinning strength. The spin valves with a CoFe/NiFe composite free layer have relatively better magnetic properties: a higher GMR ratio compared with the spin valve with a single NiFe free layer and a lower free layer coercivity compared with the spin valve with a single CoFe layer.

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30

Kamashev А. А., Garif’yanov N. N., Validov A. A., Fominov Ya. V., and Garifullin I. A. "Superconducting spin-valve effect in heterostructures with ferromagnetic Heusler alloy layers." Physics of the Solid State 64, no. 9 (2022): 1196. http://dx.doi.org/10.21883/pss.2022.09.54151.18hh.

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The transport properties of two types of spin valves are analyzed, in which the Heusler alloy Co2Cr1-xFexAly was used as one of the two ferromagnetic layers in the F1/F2/S structures. The Heusler alloy layer was used: 1) as a weak ferromagnet, in the case of the F2 layer; 2) as a halfmetal, in the case of the F1 layer. In the first case, a large classical effect of the superconducting spin valve Delta Tc was obtained, which was facilitated by a significant triplet contribution to the effect of the superconducting spin valve Delta Tctrip. In the second case, a gigantic effect value Delta Tctrip was found reaching 0.5 K. Keywords: superconductivity, ferromagnetism, thin films, superconducting spin valve.

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31

Ueno, M., K. Tabuchi, T. Sawasaki, H. Nishida, K. Mizukami, and F. Hikami. "Read-Write Performance of Spin-Filter-Spin-Valve Heads." Journal of the Magnetics Society of Japan 24, no. 4−2 (2000): 347–50. http://dx.doi.org/10.3379/jmsjmag.24.347.

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32

Guo, J., M. B. A. Jalil, and S. G. Tan. "Efficient spin transfer torque in pseudo-spin-valve structure." Journal of Applied Physics 103, no. 7 (April 2008): 07A718. http://dx.doi.org/10.1063/1.2837483.

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33

Xu, Yuan, Ke Xia, and Zhongshui Ma. "Spin transfer torques in the nonlocal lateral spin valve." Nanotechnology 19, no. 23 (May 6, 2008): 235404. http://dx.doi.org/10.1088/0957-4484/19/23/235404.

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34

Zhang, R. Q., J. Su, J. W. Cai, G. Y. Shi, F. Li, L. Y. Liao, F. Pan, and C. Song. "Spin valve effect induced by spin-orbit torque switching." Applied Physics Letters 114, no. 9 (March 4, 2019): 092404. http://dx.doi.org/10.1063/1.5086775.

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35

Hiep, Duong Dinh, Masaaki Tanaka, and Pham Nam Hai. "Spin transport in nanoscale Si-based spin-valve devices." Applied Physics Letters 109, no. 23 (December 5, 2016): 232402. http://dx.doi.org/10.1063/1.4971351.

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36

Kim, Joo-Von, and C. Chappert. "Magnetization dynamics in spin-valve structures with spin pumping." Journal of Magnetism and Magnetic Materials 286 (February 2005): 56–60. http://dx.doi.org/10.1016/j.jmmm.2004.09.036.

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37

Chamberod, A., C. Cowache, B. Dieny, J. Pierre, O. Redon, B. Rodmacq, and S. Teixeira. "Spin-disorder and spin-valve magnetoresistance in granular alloys." Journal of Magnetism and Magnetic Materials 140-144 (February 1995): 507–8. http://dx.doi.org/10.1016/0304-8853(94)01518-x.

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38

Ueno, M., H. Nishida, K. Mizukami, F. Hikami, K. Tabuchi, and T. Sawasaki. "Read-write performance of spin-filter-spin-valve heads." IEEE Transactions on Magnetics 36, no. 5 (2000): 2572–74. http://dx.doi.org/10.1109/20.908514.

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39

Nonoguchi, S., T. Nomura, and T. Kimura. "Nonlocal spin transports in nanopillar-based lateral spin valve." Applied Physics Letters 100, no. 13 (March 26, 2012): 132401. http://dx.doi.org/10.1063/1.3698092.

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40

Ku, Jang Hae, Joonyeon Chang, Jonghwa Eom, Hyuncheol Koo, Suk-Hee Han, and Gyutae Kim. "Inhomogeneous spin accumulation in Py/Au/Py spin valve." physica status solidi (b) 244, no. 12 (December 2007): 4530–33. http://dx.doi.org/10.1002/pssb.200777282.

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41

Asahara, Hirokatsu, Toshiki Kanaki, Shinobu Ohya, and Masaaki Tanaka. "Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs." Applied Physics Express 11, no. 3 (February 15, 2018): 033003. http://dx.doi.org/10.7567/apex.11.033003.

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42

Katti, R. R., D. Zou, D. Reed, and H. Kaakani. "Spin-valve and pseudo-spin-valve device switching for giant magnetoresistive random access memory applications." IEEE Transactions on Magnetics 39, no. 5 (September 2003): 2848–50. http://dx.doi.org/10.1109/tmag.2003.816242.

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43

Wang, Zhicheng, Dong Pan, Le Wang, Tingwen Wang, Bing Zhao, Yong Wu, Ming Yang, et al. "Room-temperature spin transport in InAs nanowire lateral spin valve." RSC Advances 6, no. 79 (2016): 75736–40. http://dx.doi.org/10.1039/c6ra13516a.

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We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.

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44

Kobayashi, Kazuo, Masashige Sato, and Hideyuki Kikuchi. "Spin-Valve-Like Ferromagnetic Tunnel Junction." Materia Japan 37, no. 9 (1998): 736–40. http://dx.doi.org/10.2320/materia.37.736.

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45

Morinaga, Akira, and Kazuo Shiiki. "Spin-Valve Heads for 20Gbit/inch2Recording." Japanese Journal of Applied Physics 38, Part 1, No. 8 (August 15, 1999): 4741–45. http://dx.doi.org/10.1143/jjap.38.4741.

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46

Garifullin, I. A., N. N. Garif’yanov, P. V. Leksin, A. A. Kamashev, Ya V. Fominov, J. Schumann, V. Kataev, and B. Büchner. "Superconducting spin valve and triplet superconductivity." Bulletin of the Russian Academy of Sciences: Physics 78, no. 12 (December 2014): 1341–47. http://dx.doi.org/10.3103/s1062873814120077.

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47

Data Storage Components Business Gr. "Antiferromagnetic Materials for Spin-Valve GMR." Journal of the Magnetics Society of Japan 21, S_3_PMRC_97_3 (1997): S3_12–13. http://dx.doi.org/10.3379/jmsjmag.21.s3_12.

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48

Cai, Weiran, Torsten Schmidt, Udo Jorges, and Frank Ellinger. "A Feedback Spin-Valve Memristive System." IEEE Transactions on Circuits and Systems I: Regular Papers 59, no. 10 (October 2012): 2405–12. http://dx.doi.org/10.1109/tcsi.2012.2189043.

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49

Sugawara, N., M. Takiguchi, T. Yaoi, N. Negoro, K. Kagawa, A. Okabe, K. Hayashi, and H. Kano. "Linearity of unshielded spin-valve sensors." Applied Physics Letters 70, no. 4 (January 27, 1997): 523–25. http://dx.doi.org/10.1063/1.118313.

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50

Qian, Z., D. Wang, J. M. Daughton, M. Tondra, C. Nordman, and A. Popple. "Linear Spin-Valve Bridge Sensing Devices." IEEE Transactions on Magnetics 40, no. 4 (July 2004): 2643–45. http://dx.doi.org/10.1109/tmag.2004.830212.

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