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Dissertations / Theses on the topic 'Spintronic'

Author: Grafiati
Published: 4 June 2021
Last updated: 26 July 2025

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1

Wang, Chao. "MBE-grown spintronic materials." Thesis, University of Oxford, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.515009.

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2

Lamblin, Mathieu. "Quantum spintronic energy harvesters." Electronic Thesis or Diss., Strasbourg, 2024. http://www.theses.fr/2024STRAE019.

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Les moteurs quantiques promettent de réaliser des sources d’énergie abondantes, denses et respectueuses de l’environnement. Cette thèse montre expérimentalement que des jonctions ferromagnétiques tunnel contenant des impuretés magnétiques peuvent servir pour le stockage de l'information et la récolte d'énergie. Ce travail propose ensuite trois modèles théoriques permettant d’expliquer l’origine de la génération d’énergie observée : un modèle quantique microscopique basé sur une chaîne de spin connectée à deux réservoirs électroniques polarisés, un modèle phénoménologique mésoscopique qui repos
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3

Huang, Biqin. "Vertical transport silicon spintronic devices." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 201 p, 2008. http://proquest.umi.com/pqdweb?did=1459914011&sid=17&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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4

Damewood, Liam James. "Theoretical Models of Spintronic Materials." Thesis, University of California, Davis, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3602035.

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<p> In the past three decades, spintronic devices have played an important technological role. Half-metallic alloys have drawn much attention due to their special properties and promised spintronic applications. This dissertation describes some theoretical techniques used in first-principal calculations of alloys that may be useful for spintronic device applications with an emphasis on half-metallic ferromagnets. I consider three types of simple spintronic materials using a wide range of theoretical techniques. They are (a) transition metal based half-Heusler alloys, like CrMnSb, where the ord
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5

Huminiuc, Teodor. "Novel antiferromagnets for spintronic devices." Thesis, University of York, 2017. http://etheses.whiterose.ac.uk/18864/.

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Spin electronic or spintronic devices which are used in hard disk drive (HDD) read heads are expected to replace the current silicon based transistor technology used in volatile memories. A prime example for the net advantage of employing spin rather than electric charge manipulation is found in the newly developed magnetic random access memory (MRAM) which is proposed as a replacement for the dynamic random access memory (DRAM) based on three terminal metal-oxide-semiconductor (MOS) devices. Besides the decrease of energy consumption by a factor three arising from manipulating electron angula
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6

Fu, Lei. "Spintronic sensor based microwave imaging." AIP Publishing, 2012. http://hdl.handle.net/1993/31646.

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Novel characteristics of spin-based phenomena are intensively researched in the hope of discovering effects that could be used to develop new types of high-performance spintronic devices. Recent dynamics studies have revealed new principles for spintronic devices to sense microwaves. The capabilities for detecting both microwave electric field and magnetic field could make the spintronic microwave sensor as ubiquitous as semiconductor devices in microwave applications in the future. In this thesis, the feasibility of spintronic sensors in microwave applications has been researched and develope
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7

Waldron, Derek. "Ab-initio simulation of spintronic devices." Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=18470.

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In this thesis, we present the mathematical and implementation details of an ab initio method for calculating spin-polarized quantum transport properties of atomic scale spintronic devices under external bias potential. The method is based on carrying out density functional theory (DFT) within the Keldysh non-equilibrium Green's function (NEGF) formalism to calculate the self-consistent spin-densities. This state-of-the-art technique extends previous work by: i) reformulating the theory in spin-space such that the non-equilibrium charge density can be evaluated for different spin-channels, an
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8

Agrawal, Parnika. "Magnetic thin films For spintronic memory." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/115689.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2018.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 107-128).<br>Domain walls are regions of spatially non-uniform magnetizations in magnetic materials. They form the boundaries between two or more uniformly magnetized regions called domains. Skyrmions are circular magnetic domains with chiral domain walls that are interesting due to their stability and potential for fast motion. These spin structures can be used to encode Os and Is in spintronic memo
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9

Durrant, Christopher John. "Magnetisation dynamics of nanostructured spintronic devices." Thesis, University of Exeter, 2016. http://hdl.handle.net/10871/26197.

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In this thesis investigations of the static and dynamic properties of magnetic thin films and thin magnetic multilayers with spintronic properties are presented. A selective area chemical vapour deposition technique has been used to fabricate continuous and patterned epitaxial CrO$_2$ thin films grown on (100)-oriented TiO$_2$ substrates. Precessional magnetization dynamics were stimulated both electrically and optically, and probed by means of time-resolved Kerr microscopy (TRSKM) and vector network analyser ferromagnetic resonance (VNA-FMR) techniques. The dependence of the precession freque
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10

Magnus, Fridrik. "Electrical transport in hybrid spintronic structures." Thesis, Imperial College London, 2008. http://hdl.handle.net/10044/1/4411.

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Injection and detection of spin polarised current in a metal/semiconductor deviceand the measurement of the degree of injected spin polarisation are two key issuesin the development of hybrid spintronics. This thesis touches on both themes asit details the development of planar Andreev spectroscopy as a tool to measureinjected spin and the electrical characterisation of MgO tunnel barriers for efficientspin injection and detection. Point contact Andreev reflection spectroscopy has been widely used tomeasuretransport spin polarisation in magnetic materials. Planar Andreev structures havean adva
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11

Luongo, Kevin. "Nanoparticle-Based Spintronic Computer Logic Switch." FIU Digital Commons, 2019. https://digitalcommons.fiu.edu/etd/3962.

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Spintronics is a rapidly growing research field due to scalability, integrablility within existing VLSI architecture, significantly reduced switching energy and latency while maintaining stable bit orientation (Spin-up, Spin-down). For the first time sub-5nm Spin Transfer Torque –Magnetic Tunneling Junctions (STT-MTJ) were investigated utilizing various Integrated Circuit (IC) fabrication techniques to evaluate novel concepts in logic switches. Tunneling Magnetoresistance (TMR) was measured in STT-MTJ stacks of Ta/CoFeB/MgO/CoFeB/Ta with differing diameter ferrimagnetic CoFe2O4 nanoparticles (
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12

Plouet, Erwan. "Convolutional and dynamical spintronic neural networks." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP120.

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Cette thèse aborde le développement de composants spintroniques pour le calcul neuromorphique, une approche novatrice visant à réduire la consommation énergétique significative des applications d'intelligence artificielle (IA). L'adoption généralisée de l'IA, y compris des très grands modèles de langage tels que ChatGPT, a entraîné une augmentation des besoins énergétiques, les centres de données consommant environ 1 à 2 de l'énergie mondiale, avec une projection de doublement d'ici 2030. Les architectures hardware traditionnelles, qui séparent la mémoire et les unités de traitement, ne sont p
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13

Gebeyehu, Zewdu Messele. "High-quality CVD graphene for spintronic applications." Doctoral thesis, Universitat Autònoma de Barcelona, 2019. http://hdl.handle.net/10803/669549.

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Aquesta tesi s’ha basat en la síntesi i el processament del grafè per tal d’obtenir les condicions òptimes per a la seva utilització en aplicacions d’espintrònica. La tesi està emmarcada en dos camps de recerca punters: el món del grafè amb la seva riquesa de propietats úniques i el camp de l’espintrònica que explora el grau de llibertat de l’espí de l’electró de cara a noves aplicacions en informàtica i tecnologia de comunicacions (com és ara els dispositius de lògica i d’emmagatzematge d’informació). En aquest context, el grafè és un material prometedor de cara a transportar l’espí amb grans
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14

Zanettini, Silvia. "High mobility materials for organic spintronic applications." Thesis, Strasbourg, 2015. http://www.theses.fr/2015STRAE003/document.

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Cette thèse est porté sur l'étude du transport électronique dans différents matériaux organiques semi-conducteurs, considérés comme candidats potentiels pour des applications en Electronique de Spin Organique. Pour rendre possible la diffusion d'un courant polarisée en spin à l'intérieur d'un semi-conducteur (injection-transport-détection), le mécanisme de transport et la mobilité des porteurs de charge, ainsi que la nature et la valeur de la résistance de contact de l'interface séparant matériau organique et électrodes métalliques ferromagnétiques, doivent répondre à des critères très stricts
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15

Robaschik, Peter. "Organic semiconductor thin films for spintronic applications." Thesis, Imperial College London, 2018. http://hdl.handle.net/10044/1/64818.

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Organic semiconductors have a major impact on our daily life, as they are increasingly implemented in commercial devices like organic light emitting diodes (OLED), organic field effect transistors (OFET) or solar cells. Recently, this class of materials became of interest for spintronic applications, which make use of the spin in addition to the charge of the electrons. Due to a high spin life-time and an easy manipulation of the chemical and physical properties, organic molecules become a promising alternative to transition metals and metal oxides for both spin transport and polarisation medi
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16

Chirac, Théophile. "New spintronic components based on antiferromagnetic materials." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS482.

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Les mémoires magnétiques actuelles commencent à atteindre leurs limites physiques en terme de stabilité, vitesse et consommation énergétique, alors que la course à la miniaturisation s'intensifie. Le champ émergeant de la spintronique étudie le comportement collectif des spins dans la matière ainsi que leurs interactions aux interfaces, afin de trouver une solution en termes de matériaux, architectures et sources excitatrices. En particulier, les matériaux antiferromagnétiques sont particulièrement prometteurs. Ces matériaux ordonnées sont abondants, naturellement stables, robustes, ultra rapi
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17

Liu, Wenqing. "Synchrotron radiation studies of spintronic hybrid systems." Thesis, University of York, 2014. http://etheses.whiterose.ac.uk/8180/.

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Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or in addition to charge-only-based physical phenomena, which promises not only new capabilities of electronic devices, but also abundant science. For applied materials, the spin ordering has long been investigated within the context of conventional ferromagnetic materials (FMs), while the study of spin generation, relaxation, and spin-orbit coupling (SOC) in semiconductors (SCs) took off only recently with the advent of spintronics and it is here that many novel materials and FM/SC hybrid structures c
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18

Azam, Md Ali. "Energy Efficient Spintronic Device for Neuromorphic Computation." VCU Scholars Compass, 2019. https://scholarscompass.vcu.edu/etd/6036.

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Future computing will require significant development in new computing device paradigms. This is motivated by CMOS devices reaching their technological limits, the need for non-Von Neumann architectures as well as the energy constraints of wearable technologies and embedded processors. The first device proposal, an energy-efficient voltage-controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control
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19

Zhou, Yan. "Spin momentum transfer effects for spintronic device applications." Doctoral thesis, KTH, Materialfysik, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-10605.

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The recent discovery that a spin-polarized current can exert a large torque on a ferromagnet, through direct transfer of spin angular momentum, offers the possibility of electrical current controlled manipulation of magnetic moment in nanoscale magnetic device structures. This so-called spin torque effect holds great promise for two applications, namely, spin torque oscillators (STOs) for wireless communication and radar communication, and spin transfer torque RAM (STT-RAM) for data/information storage.   The STO is a nanosized spintronic device capable of microwave generation at frequencies i
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20

Song, Qun. "Beta-detected NMR of ⁸Li⁺ in spintronic materials." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/43638.

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β-detected Nuclear Magnetic Resonance (βNMR) employs radioactive ⁸Li⁺ , which is optically spin-polarized, as a local probe to study magnetism in materials via β decay. In this thesis, βNMR is applied to spintronic materials, including GaAs, Ga₁₋xMnx Asand Fe/GaAs heterostructures in a depth-controlled manner at TRIUMF. High resolution β-NMR measurements were carried out on GaAs crystals (semi-insulating (SI-GaAs) and heavily doped n-type (n-GaAs)) as a control experiment for β-NMR on Fe/GaAs heterostructures. A small resonance shift was observed and found to be dependent on depth, temperature
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21

Hassan, Sameh Sayed Ali. "Growth and properties of half metallic spintronic materials." Thesis, University of York, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.538640.

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22

Bonhomme, Phillip. "Circuit modeling of spintronic devices: a SPICE implementation." Thesis, Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51818.

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Every engineer that has worked on designing an integrated circuit has to leverage an under- standing of device physics. Understanding device physics is essential when optimizing a design for speed, power, etc. These characteristics affect the bottom line when considering an integrated circuit used in a particular application. In order for there to be an under- standing of device physics, there must be a device model that is developed for a device of interest. The development of a device model often involves utilizing fundamental physical equations in a manner that is solvable by either analyti
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23

Li, Xiaoli. "Spintronic and plasmonic applications of electrodeposition on semiconductors." Thesis, University of Southampton, 2009. https://eprints.soton.ac.uk/66205/.

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In this thesis, metal electrodeposition on semiconductor substrates is investigated. We show that electrodeposition of metals on n-type Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages over other (physical) deposition methods. These advantages can be used to improve the prospects of applications in the area of Spintronics and Plasmonics. Firstly, the excellent current-voltage and capacitance-voltage characteristics of electrodeposited Schottky barriers indicate that they have an ideality factor close to unity and that the rever
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24

Thomas, Candice. "Strained HgTe/CdTe topological insulators, toward spintronic applications." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY090/document.

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Les isolants topologiques constituent une nouvelle classe de matériaux caractérisés par l'association d'un volume isolant et de surfaces conductrices. Avec des propriétés électroniques similaires au graphene, notamment un transport régit par des particules à énergie de dispersion linéaire couramment appelés fermions de Dirac ainsi qu'une protection topologique empêchant tout phénomène de rétrodiffusion, ces matériaux suscitent un intérêt grandissant dans la quête d'une électronique de faible consommation. En effet, la production de courants de spin non-dissipatifs et polarisés ainsi que la for
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25

Behan, Anthony. "Characterisation of doped ZnO thin films for spintronic applications." Thesis, University of Sheffield, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489367.

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Since the theoretical prediction of room temperature intrinsic ferromagnetism in doped ZnO, there has been a huge amount of research in the area. Such a property would make ZnO an excellent candidate for spintronic materials, which would potentially have many advantages over the technologies currently available. Whilst some see room temperature intrinsic ferromagnetism upon doping ZnO with small amounts of transition metals, others present evidence of ferromagnetism from extrinsic transition metal clusters or have failed to see ferromagnetism at all. This thesis investigates the properties of
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26

Akmaldinov, Kamil. "Ferromagnetic/antiferromagnetic exchange bias nanostructures for ultimate spintronic devices." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GRENY009/document.

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Les applications d’électronique de spin telles les mémoires à accès aléatoire (MRAM), les capteurs (e.g.les têtes de lecture des disques durs d’ordinateurs) et les éléments de logique magnétique utilisent les interactionsd’échange ferromagnétique/antiferromagnétique (F/AF) dans le but de définir une direction de référence pour lespin des électrons de conduction. Les MRAM à écriture assistée thermiquement (TA-MRAM) utilisent mêmedeux bicouches F/AF : une pour le stockage de l’information et l’autre comme référence. Ces dernièresapplications technologiques impliquent des étapes de nanofabricatio
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27

Papamakarios, Vasilis. "Study of electron-doped manganite films for spintronic applications." Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608424.

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28

Eivarsson, Nils, Malin Bohman, Emil Grosfilley, and Axel Lundberg. "Design and Simulation of Terahertz Antenna for Spintronic Applications." Thesis, Uppsala universitet, Institutionen för materialvetenskap, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-412982.

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Spintronics is a spin-electronic field where the electron spinangular momentum, in conjunction with charge, is used to read andwrite information in magnetic sensors and logic circuits, e.g. hard disk drive (HDD), magnetic random access memory (MRAM) and broadband TeraHertz (THz) emitters. To realize the THz operations of the spin logic circuits THz manipulation of the magnetic state is pivotal. This THz manipulation of the magnetic state in anti-ferromagnetic magnetic materials can be realized by coupling the materials with THz antennas. On the other hand, these antennas enhance the THz amplit
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29

Perera, Uduwanage Gayani E. "STM Investigation of Charge-Transfer and Spintronic Molecular Systems." Ohio University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1300141817.

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30

Esser, Bryan David. "High Resolution Characterization of Magnetic Materials for Spintronic Applications." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1524154928191728.

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31

O'Dell, Ryan Andrew. "Resonant Ferromagnetic Absorption and Magnetic Characterization of Spintronic Materials." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1533043360679487.

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32

Sagar, James. "Optimisation of Heusler alloy thin films for spintronic devices." Thesis, University of York, 2013. http://etheses.whiterose.ac.uk/4501/.

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Heusler alloys are one of the leading candidate material classes for achieving high spin polarisation. A number of Co-based Heusler alloys are predicted to be half-metallic ferromagnets that would theoretically provide 100% spin polarisation at the Fermi energy. However, there are yet to be any reports of this 100% spin polarisation experimentally. To develop these materials as a viable spin source their magnetic and structural properties must be fully characterised and optimised. In this study both epitaxial and polycrystalline thin films have been deposited and their structural and magnetic
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33

Wheeler, May Catherine. "Manipulation of fullerene C60 spintronic devices via ferromagnetic resonance." Thesis, University of Leeds, 2014. http://etheses.whiterose.ac.uk/8258/.

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C60 has been included in hybrid magneto-molecular devices as an active layer where the C60 is thermally sublimated under high vacuum and the metals are sputter deposited in-situ. Multilayer C60/Co samples were measured by x-ray reflectivity and transmission electron microscopy to show that there is little interdiffusion of layers suggesting C60 is robust to the deposition of metals by sputtering. We have observed 25% magnetoresistance through 60 nm of C60 at 10 K as well as 8% magnetoresistance at room temperature through 20 nm of C60. Unexpected asymmetric effects in external magnetic field w
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34

Pfaff, Corentin. "Growth of epitaxial MgB₂ thin films for superconducting spintronic." Electronic Thesis or Diss., Université de Lorraine, 2024. http://www.theses.fr/2024LORR0200.

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La spintronique supraconductrice est un domaine émergent et en pleine expansion, qui vise à intégrer la supraconductivité au transport de spin afin de réduire les pertes énergétiques et améliorer la performance des dispositifs spintronique. Un des principaux objectifs est la génération et le contrôle de courants polarisés en spin dans les matériaux supraconducteurs. Il a été prédit que des courants polarisés en spin, capables de se propager sur de longues distances, peuvent être générés à des interfaces supraconducteur/ferromagnétique (S/F) soigneusement conçues, ouvrant ainsi de nouvelles per
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35

Schuber, Ralf [Verfasser], and H. [Akademischer Betreuer] Kalt. "Nitride nanostructures for spintronic applications / Ralf Schuber. Betreuer: H. Kalt." Karlsruhe : KIT-Bibliothek, 2011. http://d-nb.info/1017321892/34.

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36

Bellini, Eleonora. "Characterisation of magnetic nanostructures for spintronic applications by electron microscopy." Thesis, University of Glasgow, 2011. http://theses.gla.ac.uk/3011/.

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The work presented in this PhD thesis concerns the characterisation of the physical structure, composition and domain structure of advanced magnetic materials by electron microscopy within the FP6 European Research Training Network "Spinswitch". In particular the investigations concerned MgO/CoFeB/MgO multilayers to be employed in magnetic sensors (this work was done in collaboration with INESC-MN Lisbon-Portugal); Ni80Fe20/Cu electrodeposited nanowires to be employed as spin transfer torque devices (this work was done in collaboration with NIRDTP Iasi-Romania and University of Salamanca); mul
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37

Gardener, Julie Ann. "Molecular thin films : fundamentals and potential routes for spintronic applications." Thesis, University College London (University of London), 2008. http://discovery.ucl.ac.uk/1444270/.

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Metal phthalocyanine (MPc) thin films are of interest for potential applications in spintronics and quantum computing. Two MPc-based routes towards spintronics devices are assessed here an organic-based approach and one in which MPc films serve as precursors for inorganic routes. For the all-organic approach, a selection of copper phthalocyanine (CuPc) thin films have been characterised these comprise molecular stacks (columns) that can be engineered to run parallel or orthogonal to the substrate plane. Electron paramagnetic resonance has been used to study interactions between unpaired electr
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38

Ibrahim, Rafat Mohamed. "Growth and characterisation of some magnetic oxides for spintronic applications." Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425578.

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39

Sizeland, James. "Crystallographic and magneto-dynamic characterization of thin-film spintronic materials." Thesis, University of York, 2015. http://etheses.whiterose.ac.uk/16626/.

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This thesis sets out to identify and characterise the critical properties of two spintronic materials, the half-metallic Fe3O4 and the amorphous rare earth-transition metal alloy GdFe. The critical property of Fe3O4 is its crystal ordering, due to the array of exchange and superexchange interactions which define its conductive and magnetic behaviour. A series of post-oxidized Fe3O4||MgO (001) thin-films have been produced and the oxide growth has been analyzed by high resolution transmission electron microscopy (HRTEM). The quality of the film has been assessed by magnetometry and critical par
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40

HASSAN, MARIAM. "Perpendicularly magnetized synthetic antiferromagnets for flexible spintronic and biomedical applications." Doctoral thesis, Università Politecnica delle Marche, 2021. http://hdl.handle.net/11566/289757.

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Antiferromagnetici sintetici (SAF) costituiti da due strati ferromagnetici separati da un sottile strato metallico non magnetico hanno recentemente suscitato un rinnovato interesse come potenziali candidati per una serie di applicazioni innovative e avanzate nell’ambito della spintronica e della biotecnologia. I SAF sono componenti chiave nei dispositivi spintronici e una significativa attenzione è stata recentemente prestata alla preparazione di tali sistemi su substrati flessibili in virtù dei significativi vantaggi che offrono rispetto a dispositivi fabbricati su substrati rigidi convenzion
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41

Hawecker, Jacques. "Terahertz time resolved spectroscopy of Intersubband Polaritons and Spintronic Emitters." Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS101.

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Le domaine térahertz (THz) inclut une riche variété d’applications pratiques et fondamentales où la basse énergie des photons permettent l’investigation de nouveaux phénomènes d’interaction lumière-matière. Ces travaux se focalisent sur deux thématiques émergentes où la spectroscopie THz ultra-rapide représente un outil particulièrement adapté à l’étude de phénomènes fondamentaux ainsi qu’à la conception de nouvelles sources THz. La première thématique concerne la spintronique THz capable de générer des ondes THz équivalentes à celles obtenues au sein des cristaux non-linéaires. Cette technolo
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42

Zaidi, Tahir. "Ferromagnetic and multiferroic thin films aimed towards optoelectronic and spintronic applications." Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/41110.

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This work targeted the growth of gadolinium (Gd)-doped gallium nitride (GaN) thin films (Ga₁₋ₓGdₓN) by metal organic chemical vapor deposition (MOCVD). Characterization and evaluation of these Ga₁₋ₓGdₓN thin films for application in spintronics/optoelectronics devices also formed part of this work. This work presents: (1) the first report of stable, reproducible n- and p-type Ga₁₋ₓGdₓN thin films by MOCVD; (2) the first Ga₁₋ₓGdₓN p-n diode structure; and (3) the first report of a room temperature spin-polarized LED using a Ga₁₋ₓGdₓN spin injection layer. The Ga₁₋ₓGdₓN thin films grown in this
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43

Tseng, Hsiang-Han. "Towards controlling the coercivity in molecular thin films for spintronic applications." Thesis, Imperial College London, 2015. http://hdl.handle.net/10044/1/33845.

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Organic semiconductors have attracted worldwide interest for the past two decades. The properties of these molecules can be easily manipulated and exploited, and furthermore benefit from chemical versatility, mechanical flexibility and low cost. This has led to a remarkable success in the field of plastic electronics and molecules have found numerous device applications such as photovoltaic cells (PV), organic light emitting diode (OLED), organic field effect transistor (OFET) and sensors. Organic semiconductors have recently become of considerable interest for spintronic applications, due to
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44

Leber, Roland. "Growth and characterisation of metallocene based thin films for spintronic applications." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10056153/.

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Metallocenes, discovered at the beginning of the 1950s, were very well studied for their diverse properties in redox reactions, chemical catalysis and easy decomposition of ligands. After the theoretical study by Liping Zhou et al. in 2008 that ferrocene wires possess the ability to generate a nearly 100 % spin polarised current, new interest in ferrocene arose as a potential candidate for spintronic applications. The utilisation of ferrocene itself, however, presents big challenges due to its low sublimation temperature and therefore to our knowledge no ferrocene-based thin films without comp
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45

Phillips, Lee Charles. "Spintronic devices with highly spin-polarised manganite electrodes and graphene channels." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610490.

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46

Bruneel, Pierre. "Electronic and spintronic properties of the interfaces between transition metal oxides." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP047.

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Cette thèse porte sur les propriétés de transport anormal des oxydes de métaux de transition, en particulier de la surface de SrTiO₃ ou de l’interface entre SrTiO₃ et LaAlO₃. Dans ces systèmes on observe l’apparition de gaz d’électrons bidimensionnels. Des mesures d’Effet Hall non linéaire indiquent que ces gaz sont constitués de plusieurs sortes de porteurs de charge, et que leurs populations varient de manière non monotone sous l’effet du dopage électrostatique. L’effet des propriétés électrostatiques et des corrélations électroniques sur ces variations sont discutées. Celles-ci sont à l’ori
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47

Alhashem, Zakia H. "Extraordinary Phenomena Found in Special Phases of Nitride and Spintronic Materials." Ohio University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1532457073071514.

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48

Hangarter, Carlos Maldonado. "Electrochemical synthesis of one-dimensional nanostructures for sensor and spintronic applications." Diss., [Riverside, Calif.] : University of California, Riverside, 2009. http://proquest.umi.com/pqdweb?index=0&did=1957308741&SrchMode=2&sid=1&Fmt=2&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1269278715&clientId=48051.

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Thesis (Ph. D.)--University of California, Riverside, 2009.<br>Includes abstract. Available via ProQuest Digital Dissertations. Title from first page of PDF file (viewed March 12, 2010). Includes bibliographical references. Also issued in print.
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GASTALDO, DANIELE. "Low-dimensional magnetic systems for spintronic memories: growth, characterization and modeling." Doctoral thesis, Politecnico di Torino, 2020. http://hdl.handle.net/11583/2823950.

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50

Gupta, Shalini. "Growth of novel wide bandgap room temperature ferromagnetic semiconductor for spintronic applications." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33809.

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This work presents the development of a GaN-based dilute magnetic semiconductor (DMS) by metal organic chemical vapor deposition (MOCVD) that is ferromagnetic at room temperature (RT), electrically conductive, and possesses magnetic properties that can be tuned by n- and p-doping. The transition metal series (TM: Cr, Mn, and Fe) along with the rare earth (RE) element, Gd, was investigated in this work as the magnetic ion source for the DMS. Single- phase and strain-free GaTMN films were obtained. Optical measurements revealed that Mn is a deep acceptor in GaN, while Hall measurements showed th
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