Relevant bibliographies by topics / Spintronica

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Spintronica'

Author: Grafiati
Published: 4 June 2021
Last updated: 10 March 2023

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Journal articles on the topic "Spintronica"

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XU, Y. "Spintronics and spintronic materials overview." Current Opinion in Solid State and Materials Science 10, no. 2 (April 2006): 81–82. http://dx.doi.org/10.1016/j.cossms.2007.01.001.

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LV, XIAO-RONG, SHI-HENG LIANG, LING-LING TAO, and XIU-FENG HAN. "ORGANIC SPINTRONICS: PAST, PRESENT AND FUTURE." SPIN 04, no. 02 (June 2014): 1440013. http://dx.doi.org/10.1142/s201032471440013x.

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Organic spintronics, extended the conventional spintronics with metals, oxides and semiconductors, has opened new routes to explore the important process of spin-injection, transport, manipulation and detection, holding significant promise of revolutionizing future spintronic applications in high density information storage, multi-functional devices, seamless integration, and quantum computing. Here we survey this fascinating field from some new viewpoints on research hotspots and emerging trends. The main achievements and challenges arising from spin injection and transport, in organic materials are highlighted, as well as prospects of novel organic spintronic devices are also emphasized.
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Barla, Prashanth, Vinod Kumar Joshi, and Somashekara Bhat. "Spintronic devices: a promising alternative to CMOS devices." Journal of Computational Electronics 20, no. 2 (January 19, 2021): 805–37. http://dx.doi.org/10.1007/s10825-020-01648-6.

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AbstractThe field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.
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Guo, Lidan, Xianrong Gu, Xiangwei Zhu, and Xiangnan Sun. "Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices." Advanced Materials 31, no. 45 (January 25, 2019): 1805355. http://dx.doi.org/10.1002/adma.201805355.

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Seifert, Tom S., Liang Cheng, Zhengxing Wei, Tobias Kampfrath, and Jingbo Qi. "Spintronic sources of ultrashort terahertz electromagnetic pulses." Applied Physics Letters 120, no. 18 (May 2, 2022): 180401. http://dx.doi.org/10.1063/5.0080357.

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Spintronic terahertz emitters are broadband and efficient sources of terahertz radiation, which emerged at the intersection of ultrafast spintronics and terahertz photonics. They are based on efficient spin-current generation, spin-to-charge-current conversion, and current-to-field conversion at terahertz rates. In this Editorial, we review the recent developments and applications, the current understanding of the physical processes, and the future challenges and perspectives of broadband spintronic terahertz emitters.
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Wang, Maorong, Yifan Zhang, Leilei Guo, Mengqi Lv, Peng Wang, and Xia Wang. "Spintronics Based Terahertz Sources." Crystals 12, no. 11 (November 18, 2022): 1661. http://dx.doi.org/10.3390/cryst12111661.

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Terahertz (THz) sources, covering a range from about 0.1 to 10 THz, are key devices for applying terahertz technology. Spintronics-based THz sources, with the advantages of low cost, ultra-broadband, high efficiency, and tunable polarization, have attracted a great deal of attention recently. This paper reviews the emission mechanism, experimental implementation, performance optimization, manipulation, and applications of spintronic THz sources. The recent advances and existing problems in spintronic THz sources are fully present and discussed. This review is expected to be an introduction of spintronic terahertz sources for novices in this field, as well as a comprehensive reference for experienced researchers.
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Coileáin, Cormac Ó., and Han Chun Wu. "Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review." SPIN 07, no. 03 (September 2017): 1740014. http://dx.doi.org/10.1142/s2010324717400148.

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From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.
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Mladenov, G., E. Koleva, V. Spivak, A. Bogdan, and S. Zelensky. "Prospects of spin transport electronics." Electronics and Communications 16, no. 3 (March 28, 2011): 9–13. http://dx.doi.org/10.20535/2312-1807.2011.16.3.264053.

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This review provides basic information on spintronics. Briefly described the effects on which the development of spintronic nanoscale devices are based: giant magneto-resistance, spin-dependent tunnelling effect, transport of spin-polarized current, the creation of spinpolarized current torque for a magnetic switch and the motion of the magnetization of magnetic domains. As a example of successive applications spin-dependent devices are given parameters of magnetic memories based on use of spintronics components. It is shown that such memory is competitive to nowadays standard memories (at 90 nm) and has the potential for future development (for example, reducing the critical size to 32 nm)
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Polley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, Sucheta Mondal, Kaushalya Jhuria, Hanuman Singh, Jon Gorchon, and Jeffrey Bokor. "Progress toward picosecond on-chip magnetic memory." Applied Physics Letters 120, no. 14 (April 4, 2022): 140501. http://dx.doi.org/10.1063/5.0083897.

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We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.
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Fan, Yabin, and Kang L. Wang. "Spintronics Based on Topological Insulators." SPIN 06, no. 02 (June 2016): 1640001. http://dx.doi.org/10.1142/s2010324716400014.

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Spintronics using topological insulators (TIs) as strong spin–orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin–orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin–torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.
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Dissertations / Theses on the topic "Spintronica"

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Fugattini, Silvio. "Studio mediante magnetometro moke di film sottili di manganite per applicazioni in spintronica." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amslaurea.unibo.it/8334/.

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In questo lavoro di tesi è stata studiata l'anisotropia magnetica di film sottili epitassiali di La0.7Sr0.3MnO3 (LSMO), cresciuti con la tecnica Channel Spark Ablation su substrati monocristallini di SrTiO3 (001). L'interesse nei confronti di questi materiali nasce dal fatto che, grazie alla loro proprietà di half-metallicity, sono usati come iniettori di spin in dispositivi per applicazioni in spintronica, l'elettronica che considera elemento attivo per l'informazione non solo la carica elettrica ma anche lo spin dei portatori. Un tipico esempio di dispositivo spintronico è la valvola di spin (un dispositivo costituito da due film ferromagnetici metallici separati da uno strato conduttore o isolante) il cui stato resistivo dipende dall'orientazione relativa dei vettori magnetizzazione (parallela o antiparallela) degli strati ferromagnetici. E’ quindi di fondamentale importanza conoscere i meccanismi di magnetizzazione dei film che fungono da iniettori di spin. Questa indagine è stata effettuata misurando cicli di isteresi magnetica grazie ad un magnetometro MOKE (magneto-optical Kerr effect). Le misure di campo coercitivo e della magnetizzazione di rimanenza al variare dell'orientazione del campo rispetto al campione, permettono di identificare l'anisotropia, cioè gli assi di facile e difficile magnetizzazione. I risultati delle misure indicano una diversa anisotropia in funzione dello spessore del film: anisotropia biassiale (cioè con due assi facili di magnetizzazione) per film spessi 40 nm e uniassiale (un asse facile) per film spessi 20 nm. L'anisotropia biassiale viene associata allo strain che il substrato cristallino induce nel piano del film, mentre l'origine dell'uniassialità trova la giustificazione più probabile nella morfologia del substrato, in particolare nella presenza di terrazzamenti che potrebbero indurre una step-induced anisotropy. Il contributo di questi fattori di anisotropia alla magnetizzazione è stato studiato anche in temperatura.
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Galassi, Fabio. "Fabrication of high-k dielectric thin films for spintronics." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10449/.

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Lo scopo di questa tesi è la fabbricazione di ossidi complessi aventi struttura perovskitica, per mezzo della tecnica Channel Spark Ablation (CSA). Più precisamente sono stati depositati film sottili di manganite (LSMO), SrTiO3 (STO) e NdGaO3 (NGO). Inoltre nel laboratorio ospite è stata effettuata la caratterizzazione elettrica e dielettrica (spettroscopia di impedenza), mentre per l'analisi strutturale e chimica ci si è avvalsi di collaborazioni. Sono stati fabbricati dispositivi LSMO/STO/Co e se ne è studiato il comportamento magnetoresistivo e la bistabilità elettrica a seconda del carattere epitassiale od amorfo dell'STO. I risultati più promettenti sono stati ottenuti con STO amorfo. Sono stati costruiti diversi set di condensatori nella configurazione Metallo/Isolante/Semiconduttore (MIS), con M=Au, I=STO o NGO ed S=Nb:STO, allo scopo di indagare la dipendenza delle proprietà dielettriche ed isolanti dai parametri di crescita. In particolare ci si è concentrati sulla temperatura di deposizione e, nel caso dei film di STO, anche sulla dipendenza della costante dielettrica dallo spessore del film. Come ci si aspettava, la costante dielettrica relativa dei film di STO (65 per un film spesso 40 nm e 175 per uno di 170 nm) si è rivelata maggiore di quella dei film di NGO per i quali abbiamo ottenuto un valore di 20, che coincide con il valore del bulk. Nonostante l'elevata capacità per unità di area ottenibile con l'STO, la costante dielettrica di questo materiale risulta fortemente dipendente dallo spessore del film. Un ulteriore aspetto critico relativo all'STO è dato dal livello di ossidazione del film: le vacanze di ossigeno, infatti, possono ridurre la resistività dell'STO (nominalmente molto elevata), ed aumentarne la corrente di perdita. Al contrario l'NGO è meno sensibile ai processi tecnologici e, allo stesso tempo, ha un valore di costante dielettrica più alto rispetto ad un tipico dielettrico come l'ossido di silicio.
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LONGO, EMANUELE MARIA. "HETEROSTRUCTURES BASED ON THE LARGE-AREA Sb2Te3 TOPOLOGICAL INSULATOR FOR SPIN-CHARGE CONVERSION." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/311358.

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I dispositivi elettronici che sfruttano proprietà legate allo spin elettronico costituiscono un settore molto promettente per lo sviluppo della nanoelettronica del futuro. Recentemente, gli isolanti topologici tridimensionali (IT-3D), quando posti a contatto con materiali ferromagnetici (FM), giocano un ruolo centrale nel contesto del miglioramento dell’efficienza di conversione tra spin e carica elettronici in eterostrutture di tipo FM/TI. L’oggetto principale di questa tesi è lo studio delle interazioni chimico-fisiche tra l’IT-3D Sb2Te3, nelle sue forme granulare ed epitassiale, con film di Fe e Co attraverso l’uso di tecniche di Diffrazione/Riflettività di raggi-X, spettroscopia di risonanza ferromagnetica (FMR) e pompaggio di spin in risonanza ferromagnetica (SP-FMR). In concomitanza con l’ottimizzazione delle proprietà dei materiali, un particolare interesse è stato rivolto verso l’impatto industriale della ricerca presentata. Per questo motivo, per la produzione di Sb2Te3 e di alcuni dei FM impiegati, sono state impiegate tecniche di deposizione di materiali su larga scala ( 4 pollici), quali la Metal Organic Chemical Vapor Deposition (MOCVD) e l’Atomic Layer Deposition (ALD) rispettivamente. Una approfondita caratterizzazione chimica, strutturale e magnetica dell’interfaccia Fe/ Sb2Te3-granulare ha evidenziato un marcato intermixing tra i materiali e una generale tendenza degli atomi di Fe nel legare con l’elemento calcogenuro quando presente in un IT. Attraverso trattamenti termici rapidi e a bassa temperatura sottoposti sui film di Sb2Te3 granulare prima della crescita del Fe, l’interfaccia Fe/Sb2Te3-granulare è risultata morfologicamente più netta e chimicamente stabile. Lo studio di film sottili di Co cresciuti attraverso ALD su Sb2Te3 granulare ha permesso la produzione di interfacce Co/Sb2Te3-granulare di alta qualità, con la possibilità inoltre di modificare le proprietà magneto-strutturali dei film di Co attraverso una selezione appropriata di substrati. Con l’obbiettivo di migliorare le proprietà dei film di Sb2Te3, dei trattamenti termici specifici sono stati condotti su Sb2Te3 granulare appena cresciuto, ottenendo film di Sb2Te3 altamente orientati con una qualità cristallina vicina al cristallo singolo di tipo epitassiale. Questi substrati di Sb2Te3 sono stati utilizzati per produrre eterostrutture di Au/Co/Sb2Te3-epitassiale e Au/Co/Au/Sb2Te3-epitassiale per studiare la loro risposta di FMR. I dati di FMR per il campione Au/Co/Sb2Te3-epitassiale sono stati interpretati considerando un contributo di Two Magnon Scattering (TMS) dominante, verosimilmente a causa della presenza di rugosità magnetica all’interfaccia Co/Sb2Te3-epitassiale. L’introduzione di un interlayer di Au per evitare il contatto diretto tra Co e Sb2Te3 si è dimostrato vantaggioso per la totale eliminazione del contributo di TMS. Misure di SP-FMR sono state condotte sulla struttura ottimizzata Au/Co/Au/Sb2Te3-epitassiale, sottolineando il ruolo giocato dallo strato di Sb2Te3-epitassiale nel processo di SP. I segnali di SP ricavati da campioni di Au/Co/Au/Si(111) e Co/Au/Si(111) sono stati utilizzati per determinare l’efficienza di conversione spin-carica ottenuta dall’introduzione dello strato di Sb2Te3. L’efficienza estratta è stata calcolata interpretando i dati di SP-FMR attraverso i modelli di effetto Edelstein inverso ed effetto di Spin-Hall inverso, i quali hanno dimostrato che l’IT-3D Sb2Te3 è un candidato promettente per essere impiegato nella prossima generazione di dispositivi spintronici.
Spin-based electronic devices constitute an intriguing area in the development of the future nanoelectronics. Recently, 3D topological insulators (TI), when in contact with ferromagnets (FM), play a central role in the context of enhancing the spin-to-charge conversion efficiency in FM/TI heterostructures. The main subject of this thesis is the study of the chemical-physical interactions between the granular and epitaxial Sb2Te3 3D-TI with Fe and Co thin films by means of X-ray Diffraction/Reflectivity, Ferromagnetic Resonance spectroscopy (FMR) and Spin Pumping-FMR. Beside the optimization of the materials properties, particular care was taken on the industrial impact of the presented results, thus large-scale deposition processes such as Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) were adopted for the growth of the Sb2Te3 3D-TI and part of the FM thin films respectively. A thorough chemical, structural and magnetic characterization of the Fe/granular Sb2Te3 interface evidenced a marked intermixing between the materials and a general bonding mechanism between Fe atoms and the chalcogen element in chalcogenide-based TIs. Through rapid and mild thermal treatments performed on the granular Sb2Te3 substrate prior to Fe deposition, the Fe/granular-Sb2Te3 interface turned out to be sharper and chemically stable. The study of ALD-grown Co thin films deposited on top of the granular-Sb2Te3 allowed the production of high-quality Co/granular-Sb2Te3interfaces, with also the possibility to tune the magneto-structural properties of the Co layer through a proper substrate selection. In order to improve the structural properties of the Sb2Te3, specific thermal treatments were performed on the as deposited granular Sb2Te3, achieving highly oriented films with a nearly epitaxial fashion. The latter substrates were used to produce Au/Co/epitaxial-Sb2Te3 and Au/Co/Au/epitaxial-Sb2Te3 and the dynamic of the magnetization in these structures was investigated studying their FMR response. The FMR data for the Au/Co/Sb2Te3 samples were interpreted considering the presence of a dominant contribution attributed to the Two Magnon Scattering (TMS), likely due to the presence of an unwanted magnetic roughness at the Co/epitaxial-Sb2Te3 interface. The introduction of a Au interlayer to avoid the direct contact between Co and Sb2Te3 layers was shown to be beneficial for the total suppression of the TMS effect. SP-FMR measurements were conducted on the optimized Au/Co/Au/epitaxial-Sb2Te3 structure, highlighting the role played by the epitaxial Sb2Te3substrate in the SP process. The SP signals for the Au/Co/Au/Si(111) and Co/Au/Si(111) reference samples were measured and used to determine the effective spin-to-charge conversion efficiency achieved with the introduction of the epitaxial Sb2Te3 layer. The extracted SCC efficiency was calculated interpreting the SP-FMR data using the Inverse Edelstein effect and Inverse Spin-Hall effect models, which demonstrated that the Sb2Te3 3D-TI is a promising candidate to be employed in the next generation of spintronic devices.
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ROSSI, SIMONE. "Optical investigation of phenomena induced by spin-orbit coupling in group IV heterostructures." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2022. http://hdl.handle.net/10281/382296.

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Nel campo dei semiconduttori, lo studio delle proprietà spin dipendenti forniscono informazioni fondamentali per la realizzazione di dispositivi che uniscano spin, fotonica ed elettronica. In questi dispositivi l’informazione è codificata nel grado di libertà (DOF) dello spin, sfruttando l’accoppiamento spin-orbita (SOC) tra il momento angolare del fotone e lo spin del portatore. Ho concentrato la mia ricerca sullo studio del SOC con spettroscopia ottica in Si, Ge, Sn e loro leghe. Questi materiali possiedono proprietà promettenti per applicazioni di spintronica, tra cui lunghi tempi di vita e lunghezze di diffusione dello spin. I processi di fabbricazione aprono la strada all’ingegnerizzazione del bandgap e dello strain come DOF addizionali per sintonizzare i fenomeni spin-dipendenti. La spettroscopia ottica permette di superare i problemi delle misure elettriche, come la qualità dei contatti, che impediscono una stima corretta dei parametri cinetici. I pozzi quantici (QW), sono valide piattaforme per unire i DOF sopracitati e permettere la manipolazione dello spin con campi elettrici. Nei sistemi a QW che mancano della simmetria di inversione di punto o di quella strutturale (BIA/SIA), la degenerazione di spin è rimossa dai campi Dresselhaus o Rashba. In quanto campi magnetici, possono agire agiscono sullo spin cambiandone l’orientazione. La SIA può sorgere da un drogaggio asimmetrico. In questo caso, il dispositivo possiede anche un campo elettrico che può essere sfruttato. Infatti, con un campo elettrico esterno si può modulare il campo Rashba, manipolando lo spin. Questa possibilità è significativa per la spintronica, si pensi allo spin-FET, dove la tensione di gate seleziona l’orientazione dello spin e quindi lo stato on/off. Ho eseguito misure di fotoluminescenza (PL) su campioni costituiti da uno stack di 50 QW di Ge/Si0.15Ge0.85 cresciuto nella zona intrinseca di un diodo p-i-n. Il drogaggio asimmetrico introduce la SIA, permettendo di manipolare elettricamente lo spin. Tramite due contatti in Al, ho sintonizzato un campo elettrico esterno e studiato gli effetti sulla popolazione di spin tramite PL. Inoltre, un’analisi in funzione della potenza ha mostrato una dipendenza della polarizzazione della PL dalla pompa ottica. Ho studiato anche una singola modulation-doped QW Ge0.91Sn0.09/Ge. Il profilo di banda confina delle lacune e permette la formazione di un gas bidimensionale di lacune. La struttura asimmetrica introduce la SIA, permettendo di studiare meccanismi di conversione spin-carica. Tramite litografia ho realizzato una barra di Hall ed ho eseguito misure di effetto spin-Hall inverso, da cui ho potuto estrarre l’angolo di spin-Hall. Ho anche compiuto misure magneto-ottiche a 4K, sfruttando l’effetto Hanle, per ottenere il tempo di vita (T) del portatore, che risulta di pochi ns. L’effetto Hanle è stato applicato per la prima volta nei materiali del quarto gruppo in epistrati di Ge1-xSnx (sotto), e l’ho esteso alle QW, dimostrandosi una tecnica affidabile per determinare T. Ho studiato anche campioni di epistrato di Ge1-xSnx. Il contenuto di Sn varia da 0 a 10 %, e lo strain compressivo assicura una natura indiretta del bandgap. Ho estratto T e ho trovato un comportamento non banale al variare della percentuale di Sn, la cui origine può essere attribuita alla presenza di difetti del cristallo. Questi difetti sono dovuti possibilmente alla crescita fortemente fuori equilibrio necessaria per la realizzazione di campioni di Ge1-xSnx ricchi in Sn. Per concludere, in questa tesi mi sono occupato di misure ottiche per indagare il SOC in eterostrutture di materiali del IV gruppo. I risultati ottenuti sono un passo in avanti nell’investigazione della dinamica dello spin elettronico del gruppo IV e aprono la strada verso studi futuri sulla manipolazione elettro-ottica dello spin in tecnologie quantistiche basate sull’interazione spin-luce, come spin-FET, spin-laser
In the field of semiconductors, the study of spin-dependent properties provides fundamental information needed for the realization of devices that merge spin, photonic and electronic functionalities. In these devices the information is encoded in the spin degree of freedom (DOF), exploiting the interaction between the angular momentum of the photon and the carrier spin via the spin-orbit coupling (SOC). I focused on the study of SOC in Si, Ge, Sn and their alloys using optical spectroscopy. These materials possess promising properties for spintronics applications such as long spin lifetime, diffusion length and decoherence time. Notably, the advanced manufacture also opens the way to bandgap and strain engineering as further DOF to tune spin-dependent phenomena, whereas the application of optical spectroscopy allows to overcome typical problems of electrical measurements, e.g., the quality of contacts, that hamper the estimation of carrier kinetics parameters Quantum well (QW) systems are valid platforms to merge all the aforementioned DOF and to also introduce a way to manipulate the spin via electric fields. Indeed, in QW systems that possess bulk or structure inversion asymmetry (BIA/SIA), the spin degeneracy is removed due to the Dresselhaus or Rashba fields. As effective magnetic fields, they can act on the spin of a carrier, ultimately changing its orientation. SIA can arise from an asymmetric doping of the device. In this case, the device also possesses an intrinsic electric field, which can be of practical use for applications. Indeed, an external field can be applied to tune the Rashba field, achieving spin manipulation. This opportunity has a strong impact in spintronics devices, such as the spin-FET, where the gate voltage selects the orientation of the spin and switch between on/off states I carried out photoluminescence (PL) investigations on a stack of 50 Ge/Si0.15Ge0.85 QWs grown within the intrinsic region of a p-i-n diode. The asymmetric doping introduces the SIA, necessary for achieving electrical manipulation of the spin. Via a pair of Al contacts, I was also able to study the effect of a tunable external electric field on the spin population via continuous-wave as well as time-resolved PL. Additionally, a power dependent analysis unveiled a strong effect of the light pump on the polarization I also performed PL measurements on a single modulation-doped Ge0.91Sn0.09/Ge QW. The band edge profile confines holes in the well, resulting in the formation of a two-dimensional hole gas. The asymmetric structure introduces the SIA and allows for the observation of spin-to-charge conversion mechanisms in this 2D system. I patterned a Hall bar on the sample and performed inverse spin-Hall effect measurements, extracting the spin-Hall angle. I also performed magneto-optics measurement, namely the Hanle effect, to unveil the carrier lifetime (T) of the material, which is in the ns regime at 10 K. This optical technique was applied for the first time to group IV materials in Ge1-xSnx epilayers (below), and was extended also to the QW system, proving it to be a reliable and easy method to determine T I have also studied Ge1-xSnx epilayers. The Sn content was varied from 0 to 10 %, while the compressive strain ensured an indirect bandgap nature. I applied Hanle effect to extract T and I unveiled a non-trivial behaviour with the Sn content, whose origin is ascribed to the presence of crystal flaws possibly due to the strong out-of-equilibrium growth conditions required for the realization of Sn-rich Ge1-xSnx samples In conclusion, this thesis is devoted to an all-optical investigation of SOC in heterostructures of group IV materials. The results obtained here are a step forwards in the investigation of spin dynamics of electrons in group IV and pave the way to future exploration of electrical-optical manipulation of spins in quantum technologies based on spin-photon interaction such as spin-FETs and spin-lasers
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5

Vistoli, Lorenzo. "Charge and spin transport in memristive La0.7Sr0.3Mno3/SrTiO3/Co devices." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amslaurea.unibo.it/9325/.

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Il lavoro svolto si concentra sul trasporto di carica e spin in dispositivi trilayer La0.7Sr0.3MnO3/SrTiO3/Co multifunzionali. Questi dispositivi mostrano sia magnetoresistenza che resistive switching, con un'interessante interazione fra i due effetti. Le giunzioni SrTiO3 sono state scelte per questo lavoro sia per via dei precedenti studi su SrTiO3 come barriera in dispositivi spintronici (cioè dispositivi con magnetoresistenza), sia perché sono promettenti come materiale base per costruire memristor (cioè dispositivi con resistive switching). Il lavoro di tesi è stato svolto all'Istituto per lo studio dei materiali nanostrutturati (ISMN-CNR) a Bologna. Nella prima parte di questa tesi illustrerò la fisica dietro al resistive switching e alla magnetoresistenza di dispositivi trilayer, mostrando anche risultati di studi su dispositivi simili a quelli da me studiati. Nella seconda parte mostrerò la complessa fisica degli ossidi utilizzati nei nostri dispositivi e i possibili meccanismi di trasporto attraverso essi. Nell'ultima parte descriverò i risultati ottenuti. I dispositivi La0.7Sr0.3MnO3/SrTiO3/Co sono stati studiati tramite caratterizzazione elettrica, di magnetotrasporto e con spettroscopia di impedenza. Le misure ottenute hanno mostrato una fisica molto ricca dietro al trasporto di spin e carica in questi dispositivi, e la mutua interazione fra fenomeni spintronici e di resistive switching rappresenta una chiave per comprendere la fisica di questi fenomeni. Analisi dati della dipendenza della resistenza della temperature e caratteristiche corrente-tensioni saranno usati per quantificare e descrivere il trasporto in questi dispositivi.
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6

Ullah, Saeed. "Optical control and detection of spin coherence in multilayer systems." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10052017-163058/.

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Since a decade, spintronics and related physics have attracted considerable attention due to the massive research conducted in these areas. The main reason for growing interest in these fields is the expectation to use the electrons spin instead of or in addition to the charge for the applications in spin-based electronics, quantum information, and quantum computation. A prime concern for these spins to be possible candidates for carrying information is the ability to coherently control them on the time scales much faster than the decoherence times. This thesis reports on the spin dynamics in two-dimensional electron gases hosted in artificially grown III-V semiconductor quantum wells. Here we present a series of experiments utilizing the techniques to optically control the spin polarization triggered by either optical or electrical methods i.e. well known pump-probe technique and current-induced spin polarization. We investigated the spin coherence in high mobility dense two-dimensional electron gas confined in GaAs/AlGaAs double and triple quantum wells, and, it\'s dephasing on the experimental parameters like applied magnetic field, optical power, pump-probe delay and excitation wavelength. We have also studied the large spin relaxation anisotropy and the influence of sample temperature on the long-lived spin coherence in triple quantum well structure. The anisotropy was studied as a function sample temperature, pump-probe delay time, and excitation power, where, the coherent spin dynamics was measured in a broad range of temperature from 5 K up to 250 K using time-resolved Kerr rotation and resonant spin amplification. Additionally, the influence of Al concentration on the spin dynamics of AlGaAs/AlAs QWs was studied. Where, the composition engineering in the studied structures allows tuning of the spin dephasing time and electron g-factor. Finally, we studied the macroscopic transverse drift of long current-induced spin coherence using non-local Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization. Significant spatial variation of the electron g-factor and the coherence times in the nanosecond scale transported away half-millimeter distances in a direction transverse to the applied electric field was observed.
Há uma década, a spintrônica e outras áreas relacionadas vêm atraindo considerável atenção, devido a enorme quantidade de pesquisa conduzidas por elas. A principal razão para o crescente interesse neste campo é a expectativa da aplicação do controle do spin do elétron no lugar ou em adição à carga, em dispositivos eletrônicos e informação e computação quânticas. A possibilidade destes spins carregarem informação depende, primeiramente, da habilidade de controlá-los coerentemente, em uma escala de tempo muito mais rápida do que o tempo de decoerência. Esta tese trata da dinâmica de spins em gases de elétrons bidimensionais, em poços quânticos de semicondutores III-V, crescidos artificialmente. Nós apresentamos uma série de experimentos, utilizando técnicas para o controle ótico da polarização de spin, desencadeadas por métodos óticos ou eletrônicos, ou seja, técnicas conhecidas de bombeio e prova e polarização de spin induzida por corrente. Nós investigamos a coerência de spin em gases bidimensionais, confinados em poços quânticos duplos e triplos de GaAs/AlGaAs e a dependência da defasagem com parâmetros experimentais, como campo magnético externo, potência ótica, tempo entre os pulsos de bombeio e prova e comprimento de onda da excitação. Também estudamos a grande anisotropia de relaxação de spin como função da temperatura da amostra, potência de excitação e defasagem entre bombeio e prova, medidos para uma vasta gama de temperatura, entre 5K e 250K, usando Rotação de Kerr com Resolução Temporal (TRKR) e Amplificação Ressonante de Spin (RSA). Além disso estudamos a influência da concentração de Al na dinâmica dos poços de AlGaAs/AlAs, para o qual a engenharia da composição da estrutura permite sintonizar o tempo de defasagem de spin e o fator $ g $ do elétron. Por fim, estudamos a deriva transversal macroscópica da longa coerência de spin induzida por corrente, através de medidas de Rotação de Kerr não-locais, baseadas na amplificação ressonante ótica da polarização eletricamente induzida. Observamos uma variação espacial significante do fator $ g $ e do tempo de vida da coerência, na escala de nanosegundos, deslocada distâncias de meio milímetro na direção transversa ao campo magnético aplicado.
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7

Muniz, Pedro Schio de Noronha. "Propriedades magnéticas de nanofios de cobalto autoformados por deposição à laser pulsado." Universidade Federal de São Carlos, 2012. https://repositorio.ufscar.br/handle/ufscar/4956.

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Le sujet de cette thèse est l étude de nanofils de cobalt dans une matrice d oxyde de cérium (CeO2) épitaxiée sur SrTiO3(001). L auto-assemblage de nanofils a été mis en évidence lors de la croissance de couches minces de CeO2 fortement dopées au cobalt par ablation laser pulsée. Le caractère métallique du cobalt a été vérifié par des mesures d absorption X au seuil K du cobalt réalisées au synchrotron. La formation de nanofils a été mise en évidence par des études de microscopie électronique en transmission en mode haute résolution et en mode dénergie filtrée. Ces études combinées montrent la formation de fils métalliques de Co dans la matrice, orientés le long de la direction de croissance, de longueur limitée par l épaisseur de la couche et de diamètre dans la gamme 3-7 nm. Ces nanofils constituent des systèmes modèles en nanomagnétisme. Deux assembles de fils (diamètre 3 nm et 5 nm) ont été étudiées en détail. La structure interne des fils a été déterminée par microscopie électronique et le renversement de l aimantation au moyen de mesures magnétiques statiques et dynamiques. L anisotropie magnétique de ces systèmes a été sondée par résonance ferromagnétique. Ces mesures et leurs interprétations ont permis de mettre en évidence la localisation du renversement de l aimantation dans les fils. Ce phénomne de localisation a été corrélé à la structure interne des fils, plus précisément à l existence de grains hexagonaux au sein desquels l anisotropie magnétocristalline est en compétition avec l anisotropie de forme. L ensemble de ces résultats a permis de corréler le comportement magnétique à la structure interne réelle de ces objets.
O objeto de estudo da presente tese é o estudo de nanofios de Cobalto auto-formados em matriz de Óxido de Cério (CeO2) epitaxiado sobre substrato de SrTiO3 (001). A formação espontânea de nanofios de Co metálico foi observada em filmes finos fortemente dopados produzidos por abação laser. O caráter metálico do cobalto presente no filme foi evidenciado através da análise de espectros de absorção de Raios-X na borda K do cobalto realizados no síncrotron SOLEIL. Aglomeração na forma de nanofios pôde ser comprovada através de microscopia eletrônica em transmissão de elétrons nos modos de alta resolução e de filtragem em energia. Combinando os resultados, chega-se a conclusão de formação de nanofios metálicos de Cobalto orientados paralelamente à direção de crescimento do filme com comprimento podendo alcançar até toda espessura do filme e com diâmetro entre 3 e 7 nm. Tais nanofios são sistemas modelos para estudo em nanomagnetismo. Propriedades de dois conjuntos de nanofios (com diâmetros de 3 e de 5 nm) foram detalhadamente estudadas. A estrutura interna foi determinada por microscopia eletrônica e a reversão de magnetização através de medidas estáticas e dinâmicas. A anisotropia magnética dos filmes foi investigada através de ressonância ferromagnética. A interpretação dos resultados permite evidenciar a localização da reversão de magnetização nos nanofios. O fenômeno de localização foi relacionado à estrutura interna dos nanofios, precisamente à existência de grãos de cobalto hcp, nos quais, as anisotropias de forma e magnetocristalina competem. O conjunto de resultados permitiu correlacionar o comportamento magnético com a estrutura real dos nanofios.
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8

Kameš, Jaroslav. "Studium magnetických nanostruktur pro spintroniku." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2009. http://www.nusl.cz/ntk/nusl-228666.

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The Cu/NiFe/Cu/Co/(CoOx) spin-valves have been prepared by the ion-beam sputtering method. Their GMR ratio and the time stability have been investigated by the magnetoresistance and the MOKE measurements at room temperature. The reproducibility of the preparation of the samples have been studied as well, i.e. two identically configurations of the layers should have the same magnetotransport properties.
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9

HASSAN, MARIAM. "Perpendicularly magnetized synthetic antiferromagnets for flexible spintronic and biomedical applications." Doctoral thesis, Università Politecnica delle Marche, 2021. http://hdl.handle.net/11566/289757.

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Antiferromagnetici sintetici (SAF) costituiti da due strati ferromagnetici separati da un sottile strato metallico non magnetico hanno recentemente suscitato un rinnovato interesse come potenziali candidati per una serie di applicazioni innovative e avanzate nell’ambito della spintronica e della biotecnologia. I SAF sono componenti chiave nei dispositivi spintronici e una significativa attenzione è stata recentemente prestata alla preparazione di tali sistemi su substrati flessibili in virtù dei significativi vantaggi che offrono rispetto a dispositivi fabbricati su substrati rigidi convenzionali, come la capacità di piegare e regolare la forma del substrato, un minor peso e costi contenuti. Sebbene il progresso e lo sviluppo di sistemi spintronici con anisotropia magnetica longitudinale su substrati non planari sia stato notevole nel corso degli ultimi anni, eterostrutture magneto-resistive flessibili con anisotropia magnetica perpendicolare (PMA) sono piuttosto inesplorate nonostante consentano funzionalità aggiuntive e prestazioni migliorate. D'altra parte, per applicazioni diagnostiche e terapeutiche, microdischi SAF con magnetizzazione perpendicolare preparati con approcci litografici top-down sono stati recentemente proposti come valida alternativa alle più studiate particelle superparamagnetiche sintetizzate per via chimica in quanto soddisfano tutti i criteri chiave richiesti per applicazioni biomedicali, consentendo al contempo un significativo grado di controllo e modulazione delle proprietà magnetiche. In questo contesto, la tesi si propone di sviluppare e studiare dispositivi magneto-resistivi su substrati flessibili e microdischi per applicazioni biomedicali basati su SAF a film sottile con PMA. L'attenzione si è concentrata su sistemi basati su Co/Pd e Co/Ni in virtù dell’elevata anisotropia magnetica (~106 J/m3) e della possibilità di regolare in maniera fine le proprietà magnetiche variando lo spessore dei singoli strati e il numero di ripetizioni N del doppio strato di Co/Pd(Ni). In particolare, multistrato flessibili con struttura spin-valve e magnetoresistenza gigante, costituiti da un free layer di [Co/Pd(Ni)]N e da un reference layer SAF con struttura [Co/Pd(Ni)]N/Ru/[Co/Pd(Ni)]N separati da uno strato di Cu, sono stati preparati sia mediante deposizione diretta su substrati flessibili che attraverso l’utilizzo di strategie transfer-and-bonding di tipo wet e dry. Sono state inoltre eseguite misurazioni in condizioni di flessione per indagare la robustezza delle spin-valve flessibili e la possibilità della loro integrazione su superfici curve. Film SAF ottimizzati sono stati infine impiegati per la preparazione di multistrato a film sottile costituiti da ripetizioni multiple di singole unità SAF con struttura [Co/Pd]N/Ru/[Co/Pd]N e anisotropia magnetica perpendicolare allo scopo di fabbricare microdischi SAF free-standing mediante processi litografici.
Although discovered about three decades ago, the peculiar properties of synthetic antiferromagnetic (SAF) thin films consisting of two ferromagnetic layers separated by a non-magnetic metal spacer have recently revived a renewed interest as potential candidates for a number of innovative and advanced applications including spintronics and biotechnology. SAFs are key component in spintronic devices and a significant attention has been recently paid on the preparation of such devises on flexible substrates, which provide wide advantages over their conventional rigid-substrate counterparts, such as the ability to bend and adjust the shape of a device, a light-weight and low costs. While the progress and development of systems with longitudinal magnetic anisotropy on non-planar substrates has been remarkable over the last few years, flexible magneto-resistive heterostructures with perpendicular magnetic anisotropy (PMA) are rather unexplored despite they allow for additional functionality and improved performance. On the other hand, for diagnostic and therapeutic applications, perpendicular magnetized SAF microdisks prepared by top-down lithographic approaches have been recently proposed as a valid alternative to the most investigated superparamagnetic particles synthetized by chemical routes as they fulfill all the key criteria required for biomedical applications while allowing a significant degree of control and tunability of the magnetic properties. Within this context, this thesis aims at developing and studying magneto-resistive spintronic devices on flexible substrates and microdiscs for biomedical applications based on SAF thin film stacks with PMA. The focus was on Co/Pd- and Co/Ni-based systems due to their strong PMA (~106 J/m3) and the possibility to finely tune their magnetic properties by varying the thickness of the individual layers and the number of repetitions N of the Co/Pd(Ni) bilayer. In particular, flexible Co/Pd(Ni)-based giant magnetoresistance spin-valve thin film stacks consisting of a [Co/Pd(Ni)]N free layer and a fully compensated [Co/Pd(Ni)]N/Ru/[Co/Pd(Ni)]N synthetic antiferromagnet reference electrode separated by a Cu spacer, were prepared by direct deposition on flexible substrates and by exploiting both wet and dry-etching transfer-and-bonding approaches. Measurements under bending conditions were also performed to investigate the robustness of the flexible spin-valves and the possibility for their integration on curved surfaces. The optimized SAF stacks were also used for the preparation of thin fil stacks consisting of multiple repeats of single [Co/Pd]N/Ru/[Co/Pd]N SAF units with perpendicular magnetic anisotropy with the aim to fabricate free-standing SAF microdisks by using lithographic processes.
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Iurchuk, Vadym. "Spintronics under stress." Thesis, Strasbourg, 2016. http://www.theses.fr/2016STRAE024.

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Dans cette thèse, les interactions magnétoélectriques et optomagnétiques transmises par les contraintes dans les structures ferroélectriques/ferromagnétiques sont étudiées. Nous montrons que la dynamique des déformations du Pb(ZrxTi1-x)O3 aboutit à la manipulation électrique sous-coercitive de multi-états ferroélastiques rémanents. La mesure par une jauge résistive de ces états, ainsi que l'écriture et l'effacement électriques et le stockage ferroélastique, sont démontrés. La configuration des contraintes de matériaux ferroélectriques créée électriquement, permet de modifier l'anisotropie magnétique d'une couche ferromagnétique. Ce phénomène est utilisé pour contrôler le champ magnétique coercitif des composants magnétostrictifs des vannes de spin au moyen des déformations. L’irradiation lumineuse est également utilisée pour entraîner une photostriction rémanente dans le BiFeO3. Cette déformation rémanente est transférée à une couche ferromagnétique et permet un contrôle optique de la coercivité magnétique. Nous montrons comment les états magnétiques peuvent être écrits au moyen de la lumière et effacés par un champ électrique
In this thesis, the strain-mediated magnetoelectric and optomagnetic interactions in ferroelectric/ferromagnetic structures are studied. The strain dynamics in Pb(ZrxTi1-x)O3 is shown to result in the sub-coercive electrical manipulation of its remanent ferroelastic multi-states. The resistive readout of these states provided by the strain gauge layers, together with the electrically-triggered ferroelastic writing, storage, and erasing, are demonstrated. These strain configurations created by electric fields in ferroelectrics can effectively impact the magnetic anisotropy of a ferromagnetic adlayer. This phenomenon is shown to control the magnetic coercive field of the magnetostrictive components of spin valves via the strain. Light irradiation is shown to result in remanent photostriction effect (photo-driven deformation) in BiFeO3. Such optically-induced remanent deformations can be transferred to a ferromagnetic adlayer and result in the optical control of the magnetic coercive force. It is shown here how magnetic states can be written by light and erased by an electric field
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Books on the topic "Spintronica"

1

Dey, Puja, and Jitendra Nath Roy. Spintronics. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-0069-2.

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Felser, Claudia, and Gerhard H. Fecher, eds. Spintronics. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6.

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Spintronics. Oxford: Elsevier, 2008.

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Galbiati, Marta. Molecular Spintronics. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-22611-8.

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Zhao, Weisheng, and Guillaume Prenat, eds. Spintronics-based Computing. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15180-9.

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Xu, Yongbing, David D. Awschalom, and Junsaku Nitta, eds. Handbook of Spintronics. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-7604-3.

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Bandyopadhyay, S. Introduction to spintronics. Boca Raton: CRC Press, 2008.

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Diosdado, Daniel Manzano. Spintronica: Relatos de Ciencia Ficcion. Lulu Press, Inc., 2012.

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Kaminska, Maria, Hideo Ohno, Tomasz Dietl, and David D. Awschalom. Spintronics. Elsevier Science & Technology Books, 2009.

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Wang, Kaiyou, Meiyin Yang, and Jun Luo, eds. Spintronics. Wiley, 2022. http://dx.doi.org/10.1002/9781119698968.

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Book chapters on the topic "Spintronica"

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Mattana, Richard, Nicolas Locatelli, and Vincent Cros. "Spintronics and Synchrotron Radiation." In Springer Proceedings in Physics, 131–63. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-64623-3_5.

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AbstractHaving access to the electronic and magnetic properties of spintronic systems is of crucial importance in view of their future technological developments. Our purpose in this chapter is to elaborate how a variety of synchrotron radiation-based measurements provides powerful and often unique techniques to probe them. We first introduce general concepts in spintronics and present some of the important scientific advances achieved in the last 30 years. Then we will describe some of the key investigations using synchrotron radiation concerning voltage control of magnetism, spin-charge conversion and current-driven magnetization dynamics.
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Raza, Hassan. "Spintronics." In Undergraduate Lecture Notes in Physics, 63–69. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-11733-7_7.

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Khitun, Alexander. "Spintronics." In Emerging Nanoelectronic Devices, 336–69. Chichester, United Kingdom: John Wiley & Sons Ltd, 2014. http://dx.doi.org/10.1002/9781118958254.ch17.

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Lewerenz, Hans-Joachim. "Spintronics." In Springer Series in Optical Sciences, 247–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23749-2_7.

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Sabbagh, Harold A., R. Kim Murphy, Elias H. Sabbagh, Liming Zhou, and Russell Wincheski. "Spintronics." In Scientific Computation, 283–314. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-67956-9_11.

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Graf, Tanja, and Claudia Felser. "Heusler Compounds at a Glance." In Spintronics, 1–13. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_1.

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Elmers, Hans-Joachim, Michael Kallmayer, and Peter Klaer. "New Materials with High Spin Polarization Investigated by X-Ray Magnetic Circular Dichroism." In Spintronics, 221–41. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_10.

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Fecher, Gerhard H., and Claudia Felser. "Hard X-Ray Photoelectron Spectroscopy of New Materials for Spintronics." In Spintronics, 243–69. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_11.

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Wüstenberg, Jan-Peter, Martin Aeschlimann, and Mirko Cinchetti. "Characterization of the Surface Electronic Properties of Co2Cr1−xFexAl." In Spintronics, 271–84. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_12.

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Hamrle, Jaroslav, Oksana Gaier, Simon Trudel, Georg Wolf, and Burkard Hillebrands. "Magneto-Optical Investigations and Ion Beam-Induced Modification of Heusler Compounds." In Spintronics, 285–302. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_13.

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Conference papers on the topic "Spintronica"

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Wang, Xiaolin. "Grand Design of Novel Spintronic and Electronic Materials for Next Generation Spintronics and Electronics." In 2016 International Conference of Asian Union of Magnetics Societies (ICAUMS). IEEE, 2016. http://dx.doi.org/10.1109/icaums.2016.8479928.

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Samarth, Nitin. "Topological spintronics." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528849.

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Samarth, Nitin. "Topological spintronics." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548496.

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Shiraishi, Masashi. "Graphene spintronics." In SPIE NanoScience + Engineering, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2010. http://dx.doi.org/10.1117/12.861584.

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Gorchon, Jon. "Picosecond spintronics." In Spintronics XIV, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2596107.

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Appelbaum, Ian. "Silicon spintronics." In 2009 10th International Conference on Ultimate Integration on Silicon (ULIS. IEEE, 2009. http://dx.doi.org/10.1109/ulis.2009.4897526.

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Taliani, C. "Organic spintronics." In The Third International Seminar on Advances in Carbon Electronics. IEE, 2004. http://dx.doi.org/10.1049/ic:20040533.

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Jansen, R. "Silicon Spintronics." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.k-9-1.

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Shiraishi, M. "Graphene Spintronics." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.k-9-2.

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Molenkamp, Laurens W. "Spintronic nanostructures." In 2006 IEEE Nanotechnology Materials and Devices Conference. IEEE, 2006. http://dx.doi.org/10.1109/nmdc.2006.4388850.

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Reports on the topic "Spintronica"

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Gerber, Alexander. Hall Effect Spintronics. Fort Belvoir, VA: Defense Technical Information Center, April 2011. http://dx.doi.org/10.21236/ada549847.

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Ruden, P. P., and Darryl L. Smith. Model Development for Graphene Spintronics. Fort Belvoir, VA: Defense Technical Information Center, September 2015. http://dx.doi.org/10.21236/ada635511.

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Levy, Jeremy, David Awschalom, and Jerrold Floro. Development of Spintronic Bandgap Materials. Office of Scientific and Technical Information (OSTI), February 2014. http://dx.doi.org/10.2172/1120126.

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Pechan, Michael. Magnetic Nanostructures and Spintronic Materials. Office of Scientific and Technical Information (OSTI), January 2016. http://dx.doi.org/10.2172/1236143.

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Kolodzey, James. Device Technologies for Semiconductor Spintronic Circuits. Fort Belvoir, VA: Defense Technical Information Center, April 2012. http://dx.doi.org/10.21236/ada560241.

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Wessels, Bruce. Investigation of Ferromagnetic Semiconductor Devices for Spintronics. Fort Belvoir, VA: Defense Technical Information Center, May 2010. http://dx.doi.org/10.21236/ada523462.

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Lichti, Roger. SISGR-MuSR Investigations of Magnetic Semiconductors for Spintronics Applications. Office of Scientific and Technical Information (OSTI), March 2014. http://dx.doi.org/10.2172/1148701.

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Hu, Bin. Exploring Novel Spintronic Responses from Advanced Functional Organic Materials. Fort Belvoir, VA: Defense Technical Information Center, November 2015. http://dx.doi.org/10.21236/ada626817.

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Park, Soo Y., and Jin H. Kim. Exploring Novel Spintronic Responses from Advanced Functional Organic Materials. Fort Belvoir, VA: Defense Technical Information Center, August 2015. http://dx.doi.org/10.21236/ada626929.

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Berezovsky, Jesse. Coupling Photonics and Coherent Spintronics for Low-Loss Flexible Optical Logic. Fort Belvoir, VA: Defense Technical Information Center, December 2015. http://dx.doi.org/10.21236/ad1003356.

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