Journal articles: 'Spintronica'

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XU, Y. "Spintronics and spintronic materials overview." Current Opinion in Solid State and Materials Science 10, no. 2 (April 2006): 81–82. http://dx.doi.org/10.1016/j.cossms.2007.01.001.

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LV, XIAO-RONG, SHI-HENG LIANG, LING-LING TAO, and XIU-FENG HAN. "ORGANIC SPINTRONICS: PAST, PRESENT AND FUTURE." SPIN 04, no. 02 (June 2014): 1440013. http://dx.doi.org/10.1142/s201032471440013x.

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Organic spintronics, extended the conventional spintronics with metals, oxides and semiconductors, has opened new routes to explore the important process of spin-injection, transport, manipulation and detection, holding significant promise of revolutionizing future spintronic applications in high density information storage, multi-functional devices, seamless integration, and quantum computing. Here we survey this fascinating field from some new viewpoints on research hotspots and emerging trends. The main achievements and challenges arising from spin injection and transport, in organic materials are highlighted, as well as prospects of novel organic spintronic devices are also emphasized.

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Barla, Prashanth, Vinod Kumar Joshi, and Somashekara Bhat. "Spintronic devices: a promising alternative to CMOS devices." Journal of Computational Electronics 20, no. 2 (January 19, 2021): 805–37. http://dx.doi.org/10.1007/s10825-020-01648-6.

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AbstractThe field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.

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Guo, Lidan, Xianrong Gu, Xiangwei Zhu, and Xiangnan Sun. "Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices." Advanced Materials 31, no. 45 (January 25, 2019): 1805355. http://dx.doi.org/10.1002/adma.201805355.

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Seifert, Tom S., Liang Cheng, Zhengxing Wei, Tobias Kampfrath, and Jingbo Qi. "Spintronic sources of ultrashort terahertz electromagnetic pulses." Applied Physics Letters 120, no. 18 (May 2, 2022): 180401. http://dx.doi.org/10.1063/5.0080357.

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Spintronic terahertz emitters are broadband and efficient sources of terahertz radiation, which emerged at the intersection of ultrafast spintronics and terahertz photonics. They are based on efficient spin-current generation, spin-to-charge-current conversion, and current-to-field conversion at terahertz rates. In this Editorial, we review the recent developments and applications, the current understanding of the physical processes, and the future challenges and perspectives of broadband spintronic terahertz emitters.

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Wang, Maorong, Yifan Zhang, Leilei Guo, Mengqi Lv, Peng Wang, and Xia Wang. "Spintronics Based Terahertz Sources." Crystals 12, no. 11 (November 18, 2022): 1661. http://dx.doi.org/10.3390/cryst12111661.

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Terahertz (THz) sources, covering a range from about 0.1 to 10 THz, are key devices for applying terahertz technology. Spintronics-based THz sources, with the advantages of low cost, ultra-broadband, high efficiency, and tunable polarization, have attracted a great deal of attention recently. This paper reviews the emission mechanism, experimental implementation, performance optimization, manipulation, and applications of spintronic THz sources. The recent advances and existing problems in spintronic THz sources are fully present and discussed. This review is expected to be an introduction of spintronic terahertz sources for novices in this field, as well as a comprehensive reference for experienced researchers.

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Coileáin, Cormac Ó., and Han Chun Wu. "Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review." SPIN 07, no. 03 (September 2017): 1740014. http://dx.doi.org/10.1142/s2010324717400148.

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From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.

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Mladenov, G., E. Koleva, V. Spivak, A. Bogdan, and S. Zelensky. "Prospects of spin transport electronics." Electronics and Communications 16, no. 3 (March 28, 2011): 9–13. http://dx.doi.org/10.20535/2312-1807.2011.16.3.264053.

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This review provides basic information on spintronics. Briefly described the effects on which the development of spintronic nanoscale devices are based: giant magneto-resistance, spin-dependent tunnelling effect, transport of spin-polarized current, the creation of spinpolarized current torque for a magnetic switch and the motion of the magnetization of magnetic domains. As a example of successive applications spin-dependent devices are given parameters of magnetic memories based on use of spintronics components. It is shown that such memory is competitive to nowadays standard memories (at 90 nm) and has the potential for future development (for example, reducing the critical size to 32 nm)

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Polley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, Sucheta Mondal, Kaushalya Jhuria, Hanuman Singh, Jon Gorchon, and Jeffrey Bokor. "Progress toward picosecond on-chip magnetic memory." Applied Physics Letters 120, no. 14 (April 4, 2022): 140501. http://dx.doi.org/10.1063/5.0083897.

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We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

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Fan, Yabin, and Kang L. Wang. "Spintronics Based on Topological Insulators." SPIN 06, no. 02 (June 2016): 1640001. http://dx.doi.org/10.1142/s2010324716400014.

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Spintronics using topological insulators (TIs) as strong spin–orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin–orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin–torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.

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Pawar, Shweta, Hamootal Duadi, and Dror Fixler. "Recent Advances in the Spintronic Application of Carbon-Based Nanomaterials." Nanomaterials 13, no. 3 (February 2, 2023): 598. http://dx.doi.org/10.3390/nano13030598.

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The term “carbon-based spintronics” mostly refers to the spin applications in carbon materials such as graphene, fullerene, carbon nitride, and carbon nanotubes. Carbon-based spintronics and their devices have undergone extraordinary development recently. The causes of spin relaxation and the characteristics of spin transport in carbon materials, namely for graphene and carbon nanotubes, have been the subject of several theoretical and experimental studies. This article gives a summary of the present state of research and technological advancements for spintronic applications in carbon-based materials. We discuss the benefits and challenges of several spin-enabled, carbon-based applications. The advantages include the fact that they are significantly less volatile than charge-based electronics. The challenge is in being able to scale up to mass production.

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Kumar, Prashant, Ravi Kumar, Sanjeev Kumar, Manoj Kumar Khanna, Ravinder Kumar, Vinod Kumar, and Akanksha Gupta. "Interacting with Futuristic Topological Quantum Materials: A Potential Candidate for Spintronics Devices." Magnetochemistry 9, no. 3 (March 2, 2023): 73. http://dx.doi.org/10.3390/magnetochemistry9030073.

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Spintronics, also known as magneto-electronics or spin transport electronics, uses the magnetic moment of the electron due to intrinsic spin along with its electric charge. In the present review, the topological insulators (2D, 3D, and hydride) were discussed including the conducting edge of 2D topological insulators (TIs). Preparation methods of TIs along with fundamental properties, such as low power dissipation and spin polarized electrons, have been explored. Magnetic TIs have been extensively discussed and explained. Weyl phases, topological superconductors, and TIs are covered in this review. We have focused on creating novel spintronic gadgets based on TIs which have metallic topological exterior facades that are topologically defended and have an insulating bulk. In this review, topological phases are discussed as a potential candidate for novel quantum phenomena and new technological advances for fault-tolerant quantum computation in spintronics, low-power electronics, and as a host for Majorana fermions are elucidated. Room temperature stable magnetic skyrmions and anti-skyrmions in spintronics for next-generation memory/storage devices have been reported.

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Yan, Han, Zexin Feng, Peixin Qin, Xiaorong Zhou, Huixin Guo, Xiaoning Wang, Hongyu Chen, et al. "Antiferromagnetic Spintronics: Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices (Adv. Mater. 12/2020)." Advanced Materials 32, no. 12 (March 2020): 2070091. http://dx.doi.org/10.1002/adma.202070091.

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Kumar, Rajat, Divyanshu Divyanshu, Danial Khan, Selma Amara, and Yehia Massoud. "Polymorphic Hybrid CMOS-MTJ Logic Gates for Hardware Security Applications." Electronics 12, no. 4 (February 10, 2023): 902. http://dx.doi.org/10.3390/electronics12040902.

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Various hardware security concerns, such as hardware Trojans and IP piracy, have sparked studies in the security field employing alternatives to CMOS chips. Spintronic devices are among the most-promising alternatives to CMOS devices for applications that need low power consumption, non-volatility, and ease of integration with silicon substrates. This article looked at how hardware can be made more secure by utilizing the special features of spintronics devices. Spintronic-based devices can be used to build polymorphic gates (PGs), which conceal the functionality of the circuits during fabrication. Since spintronic devices such as magnetic tunnel junctions (MTJs) offer non-volatile properties, the state of these devices can be written only once after fabrication for correct functionality. Symmetric circuits using two-terminal MTJs and three-terminal MTJs were designed, analyzed, and compared in this article. The simulation results demonstrated how a single control signal can alter the functionality of the circuit, and the adversary would find it challenging to reverse-engineer the design due to the similarity of the logic blocks’ internal structures. The use of spintronic PGs in IC watermarking and fingerprinting was also explored in this article. The TSMC 65nm MOS technology was used in the Cadence Spectre simulator for all simulations in this work. For the comparison between the structures based on different MTJs, the physical dimension of the MTJs were kept precisely the same.

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Wolf, S. A., Daryl Treger, and Almadena Chtchelkanova. "Spintronics: The Future of Data Storage?" MRS Bulletin 31, no. 5 (May 2006): 400–403. http://dx.doi.org/10.1557/mrs2006.101.

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AbstractReasearch and technology developments in the field of spintronics have grown tremendously in the past 10-15 years and already have had a major impact on the data storage industry.The future looks even brighter, as many new spintronic discoveries have been recently made that promise an even bigger impact in the future.This article summarizes the past accomplishments, describes some of the major discoveries that will have a lasting impact on the field, and discusses some of the technologies that may revolutionize data storage in the next decade.

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Popoola, Adewumi I., and S. Babatunde Akinpelu. "Numerical Investigation of the Stability and Spintronic Properties of Selected Quaternary Alloys." European Journal of Applied Physics 3, no. 4 (July 8, 2021): 6–12. http://dx.doi.org/10.24018/ejphysics.2021.3.4.86.

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The use of electronic charge and spins (spintronics) has been proposed for much better data storage. This class of material is believed to have excellent capability for data integrity, low dynamic power consumption and high-density storage that showcases excellent protection against data loss. The spintronic and related properties have been investigated on four newly proposed quaternary alloys (NbRhGeCo, NbRhGeCr, NbRhGeFe and NbRhGeNi) through the first-principles calculation method of the Density Functional Theory (DFT). Specifically, the phonon frequencies, elastic stabilities, and the electronic structure were systematically studied in the full Heusler structure. The results predict that NbRhGeFe and NbRhGeCr are elastically and structurally stable. Both NbRhGeFe and NbRhGeCo are half-metals with ferromagnetic character, but NbRhGeCo is unfortunately elastically unstable. NbRhGeCr and NbRhGeNi are non-magnetic metallic alloys in their spin channels. All the results predict NbRhGeFe to be the only suitable among all the four alloys for spintronic application.

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Chen, Aitian, Yuelei Zhao, Yan Wen, Long Pan, Peisen Li, and Xi-Xiang Zhang. "Full voltage manipulation of the resistance of a magnetic tunnel junction." Science Advances 5, no. 12 (December 2019): eaay5141. http://dx.doi.org/10.1126/sciadv.aay5141.

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One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

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Li, Xinlu, Meng Zhu, Yaoyuan Wang, Fanxing Zheng, Jianting Dong, Ye Zhou, Long You, and Jia Zhang. "Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe₃GaTe₂ with highly spin-polarized Fermi surfaces." Applied Physics Letters 122, no. 8 (February 20, 2023): 082404. http://dx.doi.org/10.1063/5.0136180.

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Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW materials has largely impeded its development in practical spintronic devices. Inspired by the lately discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.

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Li, Jing, Shuai-Shuai Ding, and Wen-Ping Hu. "Research of spinterface in organic spintronic devices." Acta Physica Sinica 71, no. 6 (2022): 067201. http://dx.doi.org/10.7498/aps.71.20211786.

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Spintronics are attractive to the utilization in next-generation quantum-computing and memory. Compared with inorganic spintronics, organic spintronics not only controls the spin degree-of-freedom but also possesses advantages such as chemical tailorability, flexibility, and low-cost fabrication process. Besides, the organic spin valve with a sandwich configuration that is composed of two ferromagnetic electrodes and an organic space layer is one of the classical devices in organic spintronics. Greatly enhanced or inversed magnetoresistance (MR) sign appearing in organic spin valve is induced by the unique interfacial effect an organic semiconductor/ferromagnetic interface. The significant enhancement or inversion of MR is later proved to be caused by the spin-dependent hybridization between molecular and ferromagnetic interface, <i>i.e.</i>, the spinterface. The hybridization is ascribed to spin-dependent broadening and shifting of molecular orbitals. The spinterface takes place at one molecular layer when attaching to the surface of ferromagnetic metal. It indicates that the MR response can be modulated artificially in a specific device by converting the nature of spinterface. Despite lots of researches aiming at exploring the mechanism of spinterface, several questions need urgently to be resolved. For instance, the spin polarization, which is difficult to identify and observe with the surface sensitive technique and the inversion or enhancement of MR signal, which is also hard to explain accurately. The solid evidence of spinterface existing in real spintronic device also needs to be further testified. Besides, the precise manipulation of the MR sign by changing the nature of spinterface is quite difficult. According to the above background, this review summarizes the advance in spinterface and prospects future controllable utilization of spinterface. In Section 2, we introduce the basic principle of spintronic device and spinterface. The formation of unique spinterface in organic spin valve is clarified by using the difference in energy level alignment between inorganic and organic materials. Enhancement and inversion of MR sign are related to the broadening and shifting of the molecular level. In Section 3, several examples about identification of spinterface are listed, containing characterization by surface sensitive techniques and identification in real working devices. In Section 4 some methods about the manipulation of spinterface are exhibited, including modulation of ferroelectric organic barrier, interface engineering, regulation of electronic phase separation in ferromagnetic electrodes, etc. Finally, in this review some unresolved questions in spintronics are given, such as multi-functional and room-temperature organic spin valve and improvement of the spin injection efficiency. Spinterface is of great importance for both scientific research and future industrial interest in organic spintronics. The present study paves the way for the further development of novel excellent organic spin valves.

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Ning, Weihua, Jinke Bao, Yuttapoom Puttisong, Fabrizo Moro, Libor Kobera, Seiya Shimono, Linqin Wang, et al. "Magnetizing lead-free halide double perovskites." Science Advances 6, no. 45 (November 2020): eabb5381. http://dx.doi.org/10.1126/sciadv.abb5381.

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Spintronics holds great potential for next-generation high-speed and low–power consumption information technology. Recently, lead halide perovskites (LHPs), which have gained great success in optoelectronics, also show interesting magnetic properties. However, the spin-related properties in LHPs originate from the spin-orbit coupling of Pb, limiting further development of these materials in spintronics. Here, we demonstrate a new generation of halide perovskites, by alloying magnetic elements into optoelectronic double perovskites, which provide rich chemical and structural diversities to host different magnetic elements. In our iron-alloyed double perovskite, Cs2Ag(Bi:Fe)Br6, Fe3+ replaces Bi3+ and forms FeBr6 clusters that homogenously distribute throughout the double perovskite crystals. We observe a strong temperature-dependent magnetic response at temperatures below 30 K, which is tentatively attributed to a weak ferromagnetic or antiferromagnetic response from localized regions. We anticipate that this work will stimulate future efforts in exploring this simple yet efficient approach to develop new spintronic materials based on lead-free double perovskites.

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Wang, Xiao-Lin. "Dirac spin-gapless semiconductors: promising platforms for massless and dissipationless spintronics and new (quantum) anomalous spin Hall effects." National Science Review 4, no. 2 (November 13, 2016): 252–57. http://dx.doi.org/10.1093/nsr/nww069.

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Abstract It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy dispersion are unique materials that can realize these massless and dissipationless states. Furthermore, we propose four new types of spin Hall effects that consist of spin accumulation of equal numbers of electrons and holes having the same or opposite spin polarization at the sample edge in Hall effect measurements, but with vanishing Hall voltage. These new Hall effects can be classified as (quantum) anomalous spin Hall effects. The physics for massless and dissipationless spintronics and the new spin Hall effects are presented for spin-gapless semiconductors with either linear or parabolic dispersion. New possible candidates for Dirac-type or parabolic-type spin-gapless semiconductors are proposed in ferromagnetic monolayers of simple oxides with either honeycomb or square lattices.

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Ren, Ceng-Ceng, Wei-Xiao Ji, Shu-Feng Zhang, Chang-Wen Zhang, Ping Li, and Pei-Ji Wang. "Strain-Induced Quantum Spin Hall Effect in Two-Dimensional Methyl-Functionalized Silicene SiCH3." Nanomaterials 8, no. 9 (September 7, 2018): 698. http://dx.doi.org/10.3390/nano8090698.

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Quantum Spin Hall (QSH) has potential applications in low energy consuming spintronic devices and has become a researching hotspot recently. It benefits from insulators feature edge states, topologically protected from backscattering by time-reversal symmetry. The properties of methyl functionalized silicene (SiCH3) have been investigated using first-principles calculations, which show QSH effect under reasonable strain. The origin of the topological characteristic of SiCH3, is mainly associated with the s-pxy orbitals band inversion at Γ point, whilst the band gap appears under the effect of spin-orbital coupling (SOC). The QSH phase of SiCH3 is confirmed by the topological invariant Z2 = 1, as well as helical edge states. The SiCH3 supported by hexagonal boron nitride (BN) film makes it possible to observe its non-trivial topological phase experimentally, due to the weak interlayer interaction. The results of this work provide a new potential candidate for two-dimensional honeycomb lattice spintronic devices in spintronics.

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Xu, Zhen, Jing Liu, Shimin Hou, and Yongfeng Wang. "Manipulation of Molecular Spin State on Surfaces Studied by Scanning Tunneling Microscopy." Nanomaterials 10, no. 12 (November 30, 2020): 2393. http://dx.doi.org/10.3390/nano10122393.

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The adsorbed magnetic molecules with tunable spin states have drawn wide attention for their immense potential in the emerging fields of molecular spintronics and quantum computing. One of the key issues toward their application is the efficient controlling of their spin state. This review briefly summarizes the recent progress in the field of molecular spin state manipulation on surfaces. We focus on the molecular spins originated from the unpaired electrons of which the Kondo effect and spin excitation can be detected by scanning tunneling microscopy and spectroscopy (STM and STS). Studies of the molecular spin-carriers in three categories are overviewed, i.e., the ones solely composed of main group elements, the ones comprising 3d-metals, and the ones comprising 4f-metals. Several frequently used strategies for tuning molecular spin state are exemplified, including chemical reactions, reversible atomic/molecular chemisorption, and STM-tip manipulations. The summary of the successful case studies of molecular spin state manipulation may not only facilitate the fundamental understanding of molecular magnetism and spintronics but also inspire the design of the molecule-based spintronic devices and materials.

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Huang, L., C. F. Li, Y. S. Tang, L. Lin, W. J. Zhai, X. M. Cui, G. Z. Zhou, et al. "Magnetotransport around the Morin transition in α-Fe₂O₃ single crystals." Journal of Applied Physics 132, no. 16 (October 28, 2022): 163903. http://dx.doi.org/10.1063/5.0099242.

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Antiferromagnetic spintronics has been receiving attention recently, while spin-texture dependent magnetoresistance (MR) represents one of the main mechanisms for magnetic data storage. In particular, sufficiently large MR with high operating temperatures would be highly required for advanced spintronic applications. In this work, we experimentally investigate the MR effect of well-known antiferromagnet α-Fe2O3 (hematite) in a single crystal form, which has the Morin transition temperature as high as Tm ∼ 260 K. It is revealed that the MR effect associated with the spin-texture re-alignment, i.e., the spin-flop from the out-of-plane direction ( c axis) to the in-plane direction, driven by sufficiently low magnetic fields inclined along the [012] direction, reaches up to ∼2.5% at temperature T ∼ 250 K. The first-principles calculations suggest that this MR effect originates from the reduced bandgap due to the spin-flop and the finite spin–orbital coupling. The present work sheds light on the possibility of α-Fe2O3 as a favored MR-based candidate for near-room temperature spintronics.

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Zhang, Yue, Xueqiang Feng, Zhenyi Zheng, Zhizhong Zhang, Kelian Lin, Xiaohan Sun, Guanda Wang, et al. "Ferrimagnets for spintronic devices: From materials to applications." Applied Physics Reviews 10, no. 1 (March 2023): 011301. http://dx.doi.org/10.1063/5.0104618.

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Spintronic devices use spin instead of charge to process information and are widely considered as promising candidates for next-generation electronic devices. In past decades, the main motivation in spintronics has been to discover new mechanisms and novel material systems to improve both device performance and the application prospects of spintronics. Recently, researchers have found that ferrimagnetic materials—in which sublattices are coupled antiferromagnetically—offer an emerging platform for realizing high-density, high-speed, and low-power-consumption memory and logic functions. Within such a ferrimagnetic class, vanishing magnetization and ultrafast magnetic dynamics can be achieved by adjusting chemical composition and temperature, among other parameters. Meanwhile, unlike for antiferromagnets, conventional electrical read–write methods remain suitable for ferrimagnets, which is beneficial for applications. In this review, an abundant class of ferrimagnets including oxides and alloys is surveyed, and unique magnetic dynamics and effective methods for manipulating the magnetic states of ferrimagnets are discussed. Finally, novel storage and computing devices based on ferrimagnets are considered, as there are some challenges to be addressed in future applications of ferrimagnets.

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Navarro-Quezada, Andrea. "Magnetic Nanostructures Embedded in III-Nitrides: Assembly and Performance." Crystals 10, no. 5 (May 1, 2020): 359. http://dx.doi.org/10.3390/cryst10050359.

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III-Nitride semiconductors are the materials of choice for state-of-the-art opto-electronic and high-power electronic applications. Through the incorporation of magnetic ions, like transition metals and rare-earths, III-Nitrides have further extended their applicability to spintronic devices. However, in most III-Nitrides the low solubility of the magnetic ions leads to the formation of secondary phases that are often responsible for the observed magnetic behavior of the layers. The present review summarizes the research dedicated to the understanding of the basic properties, from the fabrication to the performance, of III-Nitride-based phase-separated magnetic systems containing embedded magnetic nanostructures as suitable candidates for spintronics applications.

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Zong, Jia-Qi, Wei-Xiao Ji, Chang-Wen Zhang, Ping Li, and Pei-Ji Wang. "Strain-Tuned Nodal Ring in Two-Dimensional Zn3C6S6 Monolayers." Journal of Nanomaterials 2020 (August 28, 2020): 1–6. http://dx.doi.org/10.1155/2020/1378163.

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The nodal ring material has recently attracted wide attention due to its singular properties and potential applications in spintronics. Here, two-dimensional Zn3C6S6 is calculated and discussed by using first-principle calculations. We found that two-dimensional Zn3C6S6 can generate a nodal ring at 10% compressive strain, and the existence of the ring is proved by a partial charge density map. And as the compressive strain increases, the nodal ring does not disappear. At the same time, the stability of the electron-orbit coupling to the nodal ring is applied. Our findings indicate that the two-dimensional Zn3C6S6 is promising in new electronic and spintronic applications.

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Rehman, Mehtab Ur, Qun Wang, and Yunfei Yu. "Electronic, Magnetic and Optical Properties of Double Perovskite Compounds: A First Principle Approach." Crystals 12, no. 11 (November 10, 2022): 1597. http://dx.doi.org/10.3390/cryst12111597.

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Double perovskite compounds (DPCs) have gained much more attention due to their versatile character in the fields of electronics and spintronics. Using density functional theory (DFT) we investigated the electronic, magnetic and optical properties of DPC La2BB′O6 where B = Cr, Sc and V and B′ = Co, Ni. The electronic band gaps suggest these compounds are half-metallic (HF) semiconductors in the spin-up channel and metallic in the spin-down channel. Magnetic properties suggest these are ferromagnetic in nature, so all DPCs are half-metallic ferromagnetic (HM-FM). Furthermore, the compound La2CrCoO6 shows outstanding electronic and optical properties, so it can be used in optoelectronic/spintronic devices.

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Xie, Wanfeng, Zhiyong Pang, Jihui Fan, Hui Song, Feng Jiang, Huimin Yuan, Jianfei Li, Ziwu Ji, and Shenghao Han. "Structural properties of Alq3 nanocrystals prepared by physical vapor deposition and facile solution method." International Journal of Modern Physics B 29, no. 25n26 (October 14, 2015): 1542042. http://dx.doi.org/10.1142/s0217979215420424.

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Tris(8-hydroxyquinoline) aluminum [Formula: see text] nanostructures are promising materials for nanooptoelectronic devices and molecular spintronics. In this paper, we report [Formula: see text] nanocrystals prepared by both physical vapor deposition (PVD) and facile solution method. The transmission electron microscopy (TEM) and high resolution scanning electron microscope (SEM) measurements show that the [Formula: see text] nanomaterials prepared by PVD technique are [Formula: see text]-[Formula: see text] nanoflowers, while the [Formula: see text] nanostructures prepared by solution method are [Formula: see text]-[Formula: see text] nanorods. Our experiments indicate that the [Formula: see text]-[Formula: see text] nanomaterials prepared by using solution method are more suitable for the fabrication of molecular spintronic devices than that of PVD method.

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SUKEGAWA, H., Z. C. WEN, S. KASAI, K. INOMATA, and S. MITANI. "SPIN TRANSFER TORQUE SWITCHING AND PERPENDICULAR MAGNETIC ANISOTROPY IN FULL HEUSLER ALLOY Co2FeAl-BASED TUNNEL JUNCTIONS." SPIN 04, no. 04 (December 2014): 1440023. http://dx.doi.org/10.1142/s2010324714400232.

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Some of Co -based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co -based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co 2 FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.

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Rezende, Sergio M. "Introduction to nuclear spin waves in ferro- and antiferromagnets." Journal of Applied Physics 132, no. 9 (September 7, 2022): 091101. http://dx.doi.org/10.1063/5.0107157.

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Collective nuclear spin excitations, called nuclear spin waves or magnons, are enabled in strongly magnetic materials by the hyperfine coupling of the nuclear and electronic spins in an atom and the exchange interaction between electronic spins of neighboring atoms. Nuclear spin waves attracted the interest of theoretical and experimental researchers worldwide about four to five decades ago and then waned. Very recently, two experimental reports of nuclear spintronic effects in the canted antiferromagnet MnCO3 have shown that spin currents can be generated using nuclear spin states, bridging two quite separate worlds, one of nuclear spin excitations and the other of spintronics. In this Tutorial, we briefly review the basic concepts and properties of nuclear spin waves in ferro- and antiferromagnetic (AF) materials and present a few significant experimental results obtained some time ago with the uniaxial anisotropy AF MnF2 and the cubic anisotropy AF RbMnF3 and compare them with theory. We also briefly present the recent experimental observations of the nuclear spin pumping effect and the nuclear spin Seebeck effect in the canted antiferromagnet MnCO3. Other possible AF candidates for studies of nuclear spintronic effects are discussed.

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Zhou, Wenda, Mingyue Chen, Cailei Yuan, He Huang, Jingyan Zhang, Yanfei Wu, Xinqi Zheng, et al. "Antiferromagnetic Phase Induced by Nitrogen Doping in 2D Cr2S3." Materials 15, no. 5 (February 24, 2022): 1716. http://dx.doi.org/10.3390/ma15051716.

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Exploration for the new members of air-stable 2D antiferromagnetic magnets to widen the magnetic families has drawn great attention due to its potential applications in spintronic devices. In addition to seeking the intrinsic antiferromagnets, externally introducing antiferromagnetic ordering in existing 2D materials, such as structural regulation and phase engineering, may be a promising way to modulate antiferromagnetism in the 2D limit. In this work, the in situ nitrogen doping growth of ultrathin 2D Cr2S3 nanoflakes has been achieved. Antiferromagnetic ordering in 2D Cr2S3 nanoflakes can be triggered by nitrogen doping induced new phase (space group P3¯1c). This work provides a new route to realize antiferromagnetism in atomically thin 2D magnets and greatly extend applications of 2D magnets in valleytronics and spintronics.

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Zhang, Peina, Xinlu Li, Jianting Dong, Meng Zhu, Fanxing Zheng, and Jia Zhang. "π-magnetism and spin-dependent transport in boron pair doped armchair graphene nanoribbons." Applied Physics Letters 120, no. 13 (March 28, 2022): 132406. http://dx.doi.org/10.1063/5.0086377.

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Carbon-based magnetic nanostructures have long spin coherent length and are promising for spintronics applications in data storage and information processing. Recent experiments demonstrate that a pair of substitutional boron atoms (B2) doped 7-atom-wide armchair graphene nanoribbons (B2-7AGNRs) have intrinsic magnetism, providing a quasi-1D magnetic material platform for spintronics. In this work, we demonstrate that the magnetism in B2-7AGNRs is contributed by π-electrons, originating from the imbalance of electrons in two spin channels in response to boron dopants. The spin-dependent transport across single and double boron pair doped 7AGNRs (B2-7AGNRs and 2B2-7AGNRs) by constructing lateral graphene nanoribbon heterojunctions has been investigated by using first-principles calculations. We show that for B2-7AGNRs with spin splitting π -electronic states near the Fermi level, by applying a bias voltage, one can obtain a current spin polarization over 90% and a negative differential resistance effect. For 2B2-7AGNRs, two spin centers have been found to be antiferromagnetically coupled. We demonstrate a magnetoresistance effect over 15 000% by setting those two spin centers to be ferromagnetic and antiferromagnetic alignments. Based on the above spin-polarized transport properties, we reveal that GNR heterojunctions based on B2-7AGNRs could be potentially applied in quasi-1D spintronic devices.

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Chambers, Scott A., and Young K. Yoo. "New Materials for Spintronics." MRS Bulletin 28, no. 10 (October 2003): 706–10. http://dx.doi.org/10.1557/mrs2003.210.

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AbstractThis article introduces the October 2003 issue of MRS Bulletin on “New Materials for Spintronics.” As a result of quantum mechanics, the carriers in ferromagnetic metals such as Fe, Co, and Ni are spin-polarized due to an imbalance at the Fermi level in the number of spin-up and spin-down electrons. A carrier maintains its spin polarization as long as it does not encounter a magnetic impurity or interact with the host lattice by means of spin-orbit coupling. The discovery of optically induced, long-lived quantum coherent spin states in semiconductors has created a range of possibilities for a new class of devices that utilize spin. This discovery also points to the need for a wider range of spin-polarized materials that will be required for different device configurations. In this issue of MRS Bulletin, we focus on three classes of candidate spintronic materials and review the current state of our understanding of them: III–V and II–VI semiconductors, oxides, and Heusler alloys. The field of spin-polarized materials is growing very rapidly, and the search for new magnetic semiconductors and other suitable spin-injection materials with higher Curie temperatures is bringing spintronics closer to the realm of being practical.

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Maekawa, Sadamichi, Takashi Kikkawa, Hiroyuki Chudo, Jun’ichi Ieda, and Eiji Saitoh. "Spin and spin current—From fundamentals to recent progress." Journal of Applied Physics 133, no. 2 (January 14, 2023): 020902. http://dx.doi.org/10.1063/5.0133335.

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Along with the progress of spin science and spintronics research, the flow of electron spins, i.e., spin current, has attracted interest. New phenomena and electronic states were explained in succession using the concept of spin current. Moreover, as many of the conventionally known spintronics phenomena became well organized based on spin current, it has rapidly been recognized as an essential concept in a wide range of condensed matter physics. In this article, we focus on recent developments in the physics of spin, spin current, and their related phenomena, where the conversion between spin angular momentum and different forms of angular momentum plays an essential role. Starting with an introduction to spin current, we first discuss the recent progress in spintronic phenomena driven by spin-exchange coupling: spin pumping, topological Hall torque, and emergent inductor. We, then, extend our discussion to the interaction/interconversion of spins with heat, lattice vibrations, and charge current and address recent progress and perspectives on the spin Seebeck and Peltier effects. Next, we review the interaction between mechanical motion and electron/nuclear spins and argue the difference between the Barnett field and rotational Doppler effect. We show that the Barnett effect reveals the angular momentum compensation temperature, at which the net angular momentum is quenched in ferrimagnets.

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Bandyopadhyay, Supriyo. "Power Dissipation in Spintronic Devices: A General Perspective." Journal of Nanoscience and Nanotechnology 7, no. 1 (January 1, 2007): 168–80. http://dx.doi.org/10.1166/jnn.2007.18013.

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Champions of "spintronics" often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional 'charge based' electronic devices. Yet, not a single spintronic device exists today that can lend credence to this claim. Here, I show that no spintronic device that clones conventional electronic devices, such as field effect transistors and bipolar junction transistors, is likely to reduce power dissipation significantly. For that to happen, spin-based devices must forsake the transistor paradigm of switching states by physical movement of charges, and instead, switch states by flipping spins of stationary charges. An embodiment of this approach is the "single spin logic" idea proposed more than 10 years ago. Here, I revisit that idea and present estimates of the switching speed and power dissipation. I show that the Single Spin Switch is far superior to the Spin Field Effect Transistor (or any of its clones) in terms of power dissipation. I also introduce the notion of "matrix element engineering" which will allow one to switch devices without raising and lowering energy barriers between logic states, thereby circumventing the kTln2 limit on energy dissipation. Finally, I briefly discuss single spin implementations of classical reversible (adiabatic) logic.

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Wan, Haiqing, Xianbo Xiao, and Yee Sin Ang. "Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices." Nanomaterials 12, no. 1 (December 26, 2021): 56. http://dx.doi.org/10.3390/nano12010056.

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We study the quantum transport properties of graphene nanoribbons (GNRs) with a different edge doping strategy using density functional theory combined with nonequilibrium Green’s function transport simulations. We show that boron and nitrogen edge doping on the electrodes region can substantially modify the electronic band structures and transport properties of the system. Remarkably, such an edge engineering strategy effectively transforms GNR into a molecular spintronic nanodevice with multiple exceptional transport properties, namely: (i) a dual spin filtering effect (SFE) with 100% filtering efficiency; (ii) a spin rectifier with a large rectification ratio (RR) of 1.9 ×106; and (iii) negative differential resistance with a peak-to-valley ratio (PVR) of 7.1 ×105. Our findings reveal a route towards the development of high-performance graphene spintronics technology using an electrodes edge engineering strategy.

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Ye, Qian, Yu-Hao Shen, and Chun-Gang Duan. "Ferroelectric Controlled Spin Texture in Two-Dimensional NbOI₂ Monolayer." Chinese Physics Letters 38, no. 8 (September 1, 2021): 087702. http://dx.doi.org/10.1088/0256-307x/38/8/087702.

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The persistent spin helix (PSH) system is considered to have promising applications in energy-conservation spintronics because it supports an extraordinarily long spin lifetime of carriers. Here, we predict that the existence of PSH state in two-dimensional (2D) ferroelectric NbOI2 monolayers. Our first-principles calculation results show that there exists Dresselhaus-type spin-orbit coupling (SOC) band splitting near the conduction-band minimum (CBM) of the NbOI2 monolayer. It is revealed that the spin splitting near CBM merely refers to out-of-plane spin configuration in the wave vector space, which gives rise to a long-lived PSH state that can be controlled by reversible ferroelectric polarization. We believe that the coupling characteristics of ferroelectric polarization and spin texture in NbOI2 provide a platform for the realization of fully electric controlled spintronic devices.

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Coey, J. M. D., and C. L. Chien. "Half-Metallic Ferromagnetic Oxides." MRS Bulletin 28, no. 10 (October 2003): 720–24. http://dx.doi.org/10.1557/mrs2003.212.

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AbstractHalf-metals are unusual ferromagnets that have electrons at the Fermi level in a single spin state, either spin up or spin down. Of potential interest as sources and analyzers of polarized electrons in spintronic devices, they are usually identified from spin-dependent band-structure calculations. We present a classification scheme for half-metals and then discuss methods for measuring spin polarization based on point contacts or tunnel junctions with ferromagnetic or superconducting counter electrodes. Oxide examples include CrO2, the best-studied half-metal. The half-metallicity tends to be destroyed by increasing temperature and by structural defects. The half-metals that currently offer the best prospects for spintronics applications are those with the highest Curie temperatures, such as magnetite, Fe3O4, and perhaps oxide semiconductors such as Co-doped ZnO.

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Ju, Yongho “Sungtaek.” "Nanoscale Thermal Phenomena in Tunnel Junctions for Spintronics Applications." Journal of Electronic Packaging 128, no. 2 (December 5, 2005): 109–14. http://dx.doi.org/10.1115/1.2165215.

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The nascent field of spintronics has great potential to enable new types of information processing and storage devices and supplement conventional semiconductor electronics. An overview of nanoscale thermal phenomena in a tunnel junctions is provided, which is one of the key building blocks of spintronic devices. Experiments showed that the thermal resistance of nanoscale AlOx tunnel barriers increases linearly with thickness, which is consistent with the theory of energy transport in highly disordered materials. Heat conduction across a tunnel junction is impeded by significant additional resistance at interfaces between the barrier layer and electrodes due to mismatch in atomic vibrational properties and nonequilibrium between electrons and phonons. The quantum-mechanical tunneling probability depends strongly on electron energy, which leads to asymmetry in heat-generation rate along the two opposing electrodes of a tunnel junction.

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Ivanov, V. A., T. G. Aminov, V. M. Novotortsev, and V. T. Kalinnikov. "Spintronics and spintronics materials." Russian Chemical Bulletin 53, no. 11 (November 2004): 2357–405. http://dx.doi.org/10.1007/s11172-005-0135-5.

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Zhao, Yifan, Shishun Zhao, Lei Wang, Ziyao Zhou, Junxue Liu, Tai Min, Bin Peng, Zhongqiang Hu, Shengye Jin, and Ming Liu. "Solar Driven Spintronics: Sunlight Control of Interfacial Magnetism for Solar Driven Spintronic Applications (Adv. Sci. 24/2019)." Advanced Science 6, no. 24 (December 2019): 1970147. http://dx.doi.org/10.1002/advs.201970147.

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Verzhbitskiy, Ivan, and Goki Eda. "Electrostatic control of magnetism: Emergent opportunities with van der Waals materials." Applied Physics Letters 121, no. 6 (August 8, 2022): 060501. http://dx.doi.org/10.1063/5.0107329.

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Since the first reports on the observation of magnetic order in atomically thin crystals of FePS3, CrI3, and CrGeTe3 in 2016 and 2017, there has been a greatly renewed interest in the magnetism of van der Waals (vdW) layered magnets. Due to their dimensionality and structure, ultrathin vdW magnets offer tantalizing prospects for electrostatic control of magnetism for energy-efficient spintronic logic and memory devices. Recent demonstrations revealed unusually high susceptibility of some vdW magnets to electrostatic fields and shed light on a path to room temperature devices, a long-standing goal in spintronics research. In this Perspective, we discuss the potential of different classes of vdW magnets for electrostatic control of magnetism by comparing their properties with those of non-vdW magnets such as dilute magnetic III–V semiconductors and perovskite manganites that have been intensively studied in the past two decades.

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Seo, Junho, Duck Young Kim, Eun Su An, Kyoo Kim, Gi-Yeop Kim, Soo-Yoon Hwang, Dong Wook Kim, et al. "Nearly room temperature ferromagnetism in a magnetic metal-rich van der Waals metal." Science Advances 6, no. 3 (January 2020): eaay8912. http://dx.doi.org/10.1126/sciadv.aay8912.

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In spintronics, two-dimensional van der Waals crystals constitute a most promising material class for long-distance spin transport or effective spin manipulation at room temperature. To realize all-vdW-material–based spintronic devices, however, vdW materials with itinerant ferromagnetism at room temperature are needed for spin current generation and thereby serve as an effective spin source. We report theoretical design and experimental realization of a iron-based vdW material, Fe4GeTe2, showing a nearly room temperature ferromagnetic order, together with a large magnetization and high conductivity. These properties are well retained even in cleaved crystals down to seven layers, with notable improvement in perpendicular magnetic anisotropy. Our findings highlight Fe4GeTe2 and its nanometer-thick crystals as a promising candidate for spin source operation at nearly room temperature and hold promise to further increase Tc in vdW ferromagnets by theory-guided material discovery.

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Rajan, P. Iyyappa, S. Mahalakshmi, and Sharat Chandra. "Occurrence of spintronics behaviour (half-metallicity, spin gapless semiconductor and bipolar magnetic semiconductor) depending on the location of oxygen vacancies in BiFe 0.83 Ni 0.17 O 3." Royal Society Open Science 4, no. 6 (June 2017): 170273. http://dx.doi.org/10.1098/rsos.170273.

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The current communication signifies the effect of oxygen vacancies (OVs) both qualitatively and quantitatively in multiferroic BiFe 0.83 Ni 0.17 O 3 by an in-depth atomic-level investigation of its electronic structure and magnetization properties, and these materials have a variety of applications in spintronics, optoelectronics, sensors and solar energy devices. Depending on the precise location of OVs, all the three types of spintronic material namely half-metallic, spin gapless semiconductor and bipolar magnetic conductor have been established in a single material for the first time and both super-exchange and double-exchange interactions are possible in accordance with the precise location of OVs. We have also calculated the vacancy formation energies to predict their thermodynamic stabilities. These results can highlight the impact and importance of OVs that can alter the multiferroic properties of materials.

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Hara, Yoshinori, Katsumi Yoshino, Asaka Tsujie, Toshihiro Shimada, and Taro Nagahama. "Inverse tunnel magnetoresistance of magnetic tunnel junctions with a NiCo₂O₄ electrode." AIP Advances 13, no. 2 (February 1, 2023): 025162. http://dx.doi.org/10.1063/5.0107014.

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Inverse spinel oxide NiCo2O4 (NCO) is known to exhibit ferrimagnetic characteristics and electrical conductivity. First-principles calculations predict NCO to be a half-metal with a negative polarization of −100%. In this study, we fabricated epitaxial NCO/MgO/Fe magnetic tunnel junctions by reactive molecular beam epitaxy and observed an inverse tunnel magnetoresistance (TMR) effect of −19.1% at 14 K, indicating that NCO has negative spin polarization. The TMR ratio monotonically decreased with increasing temperature, which was attributed to the temperature dependence of the NCO surface magnetization due to the thermal excitation of spin waves. In addition, the TMR ratio displayed strong bias voltage dependence, decreasing to less than half of the maximum value at +20 and −30 mV. These findings support the use of NCO in spintronic devices and should lead to further developments in oxide spintronics.

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Hu, Guichao, Shijie Xie, Chuankui Wang, and Carsten Timm. "Spin-dependent transport and functional design in organic ferromagnetic devices." Beilstein Journal of Nanotechnology 8 (September 13, 2017): 1919–31. http://dx.doi.org/10.3762/bjnano.8.192.

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Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

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Zhang, Y. J., Z. H. Liu, Z. G. Wu, and X. Q. Ma. "Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys." IUCrJ 6, no. 4 (May 9, 2019): 610–18. http://dx.doi.org/10.1107/s2052252519005062.

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Materials with full spin polarization that exhibit zero net magnetization attract great scientific interest because of their potential applications in spintronics. Here, the structural, magnetic and electronic properties of a C1 b -ordered FeMnGa alloy are reported using first-principles calculations. The results indicate that the corresponding band structure exhibits a considerable gap in one of the spin channels and a zero gap in the other thus allowing for high mobility of fully spin-polarized carriers. The localized magnetic moments of Fe and Mn atoms have an antiparallel arrangement leading to fully compensated ferrimagnetism, which possesses broken magnetic inversion symmetry. Such magnetic systems do not produce dipole fields and are extremely stable against external magnetic fields. Therefore, this will improve the performance of spintronic devices. Using this principle, similar band dispersion and compensated magnetic moments were predicted in a C1 b -ordered FeMnAl0.5In0.5 Heusler alloy.

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Song, Yiyao, Bingjun Shi, Peng Lv, Dongwei Ma, Weifeng Zhang, and Yu Jia. "The effective spin-splitting manipulation of monolayer WSe₂ and Janus WSSe on SrIrO₃(111) surface: A DFT study." AIP Advances 12, no. 12 (December 1, 2022): 125308. http://dx.doi.org/10.1063/5.0098997.

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Spin regulation and manipulation in two-dimensional transition-metal dichalcogenides (TMDCs) is of great significance for two-dimensional spintronics. The electronic structure and spin feature of WSe2/SrIrO3(111) and WSSe/SrIrO3(111) interfaces were investigated by first-principles calculations with spin–orbital coupling, for which various and effective stacking configurations were considered. The spin-splitting of WSe2 at K point in the Brillouin zone can be significantly enhanced by the strong spin–orbital coupling of SrIrO3, while for WSSe, the enhanced spin-splitting is found at Q point. In particular, a small compressive strain of 1% can further strengthen the spin-splitting to 630 meV at K point, along with the p-type doping in WSe2. These findings provide a way to engineer the electronic structure and spin-splitting of TMDCs via strong interfacial spin–orbital coupling and appropriate strain field, which will extend their potential applications in spintronic devices.

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Song, Yuan Qiang, Huai Wu Zhang, Ying Li Liu, Yuan Xun Li, and Qi Ye Wen. "Magnetic and Magneto-Optical Properties of Sputtered Co-CeO₂ Thin Films on Al₂O₃ (0001) Substrates with (100) Orientation." Materials Science Forum 687 (June 2011): 117–21. http://dx.doi.org/10.4028/www.scientific.net/msf.687.117.

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Diluted magnetically doped CeO2 films is an attractive dilute magnetic oxide which would facilitate the practical realization of spintronic devices and may also be used to explore novel magneto-optical applications. In this experiments, 3 at% cobalt-doped CeO2 films with the stoichiometry of Ce0.97Co0.03O2-δ (CCO) were deposited by magnetron sputtering methods on Al2O3 (0001) substrates. The structural, magnetic, and magneto-optical properties were investigated. The results indicate that CCO films with CeO2 (100) orientation can readily be obtained via magnetron sputtering on Al2O3 (0001) substrates. Films are ferromagnetic at room temperature, which is anisotropic with an out-of-plane magnetization easy axis. Magneto-optical measurements exhibit a giant Faraday rotation of about 4800 deg/cm at 650 nm wavelength in out-of-plane direction. The excellent room-temperature ferromagnetism and the giant Faraday rotation in CCO films show highly potential applications in novel magneto-optical devices as well as in spintronics.

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Journal articles on the topic 'Spintronica'

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