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1

APPELBAUM, IAN. "SILICON SPINTRONICS." International Journal of High Speed Electronics and Systems 18, no. 04 (2008): 853–59. http://dx.doi.org/10.1142/s0129156408005825.

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Recent advances in successful operation of silicon-based devices where transport is dependent on electron magnetic moment, or "spin", could provide a future alternative to CMOS for logic processing. The basics of this spin electronics (Spintronics) technology are discussed and the specific methods necessary for application to silicon are described. Fundamental measurements of spin polarization and spin precession are demonstrated.
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2

Guzowski, B., R. Gozdur, and A. Kociubiński. "Sputtered Y3Fe5O12 Films for Spintronics Application." Acta Physica Polonica A 136, no. 5 (2019): 693–95. http://dx.doi.org/10.12693/aphyspola.136.693.

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3

Yakhmi, Jatinder V., and Vaishali Bambole. "Molecular Spintronics." Solid State Phenomena 189 (June 2012): 95–127. http://dx.doi.org/10.4028/www.scientific.net/ssp.189.95.

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The emergence of spintronics (spin-based electronics), which exploits electronic charge as well as the spin degree of freedom to store/process data has already seen some of its fundamental results turned into actual devices during the last decade. Information encoded in spins persists even when the device is switched off; it can be manipulated with and without using magnetic fields and can be written using little energy. Eventually, spintronics aims at spin control of electrical properties (I-V characteristics), contrary to the common process of controlling the magnetization (spins) via applic
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4

Moura, A. R. "Application of magnon coherent states in spintronics." Journal of Magnetism and Magnetic Materials 498 (March 2020): 166091. http://dx.doi.org/10.1016/j.jmmm.2019.166091.

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5

Misiuk, A., L. Chow, A. Barcz, J. Bak-Misiuk, W. Osinniy, and M. Prujszczyk. "SILICON BASED MATERIALS FOR APPLICATION IN SPINTRONICS." Sensor Electronics and Microsystem Technologies 4, no. 3 (2007): 54–59. http://dx.doi.org/10.18524/1815-7459.2007.3.114023.

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6

Endoh, Tetsuo, and Hiroaki Honjo. "A Recent Progress of Spintronics Devices for Integrated Circuit Applications." Journal of Low Power Electronics and Applications 8, no. 4 (2018): 44. http://dx.doi.org/10.3390/jlpea8040044.

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Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into
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7

Xu, Zhen, Jing Liu, Shimin Hou, and Yongfeng Wang. "Manipulation of Molecular Spin State on Surfaces Studied by Scanning Tunneling Microscopy." Nanomaterials 10, no. 12 (2020): 2393. http://dx.doi.org/10.3390/nano10122393.

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The adsorbed magnetic molecules with tunable spin states have drawn wide attention for their immense potential in the emerging fields of molecular spintronics and quantum computing. One of the key issues toward their application is the efficient controlling of their spin state. This review briefly summarizes the recent progress in the field of molecular spin state manipulation on surfaces. We focus on the molecular spins originated from the unpaired electrons of which the Kondo effect and spin excitation can be detected by scanning tunneling microscopy and spectroscopy (STM and STS). Studies o
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8

Parveen, I. Mubeena, V. Asvini, G. Saravanan, K. Ravichandran, and D. KalaiSelvi. "Investigation of Ni-doped CeO2 nanoparticles–spintronics application." Ionics 23, no. 5 (2017): 1285–91. http://dx.doi.org/10.1007/s11581-016-1937-1.

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9

Popoola, Adewumi I., and S. Babatunde Akinpelu. "Numerical Investigation of the Stability and Spintronic Properties of Selected Quaternary Alloys." European Journal of Applied Physics 3, no. 4 (2021): 6–12. http://dx.doi.org/10.24018/ejphysics.2021.3.4.86.

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The use of electronic charge and spins (spintronics) has been proposed for much better data storage. This class of material is believed to have excellent capability for data integrity, low dynamic power consumption and high-density storage that showcases excellent protection against data loss. The spintronic and related properties have been investigated on four newly proposed quaternary alloys (NbRhGeCo, NbRhGeCr, NbRhGeFe and NbRhGeNi) through the first-principles calculation method of the Density Functional Theory (DFT). Specifically, the phonon frequencies, elastic stabilities, and the elec
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10

SUKEGAWA, H., Z. C. WEN, S. KASAI, K. INOMATA, and S. MITANI. "SPIN TRANSFER TORQUE SWITCHING AND PERPENDICULAR MAGNETIC ANISOTROPY IN FULL HEUSLER ALLOY Co2FeAl-BASED TUNNEL JUNCTIONS." SPIN 04, no. 04 (2014): 1440023. http://dx.doi.org/10.1142/s2010324714400232.

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Some of Co -based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co -based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co 2 FeAl alloy-based MTJs.
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11

Nie, Tianxiao, Xufeng Kou, Jianshi Tang, et al. "Superlattice of FexGe1−xnanodots and nanolayers for spintronics application." Nanotechnology 25, no. 50 (2014): 505702. http://dx.doi.org/10.1088/0957-4484/25/50/505702.

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12

Tang, Jianshi, Chiu-Yen Wang, Min-Hsiu Hung, et al. "Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application." ACS Nano 6, no. 6 (2012): 5710–17. http://dx.doi.org/10.1021/nn301956m.

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13

Vengalis, Bonifacas. "Multilayers of magnetic materiais and their application in spintronics." Lithuanian Journal of Physics 44, no. 5 (2004): 321–27. http://dx.doi.org/10.3952/lithjphys.44501.

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14

Rossella, F., P. Galinetto, M. C. Mozzati, et al. "TiO2 thin films for spintronics application: a Raman study." Journal of Raman Spectroscopy 41, no. 5 (2009): 558–65. http://dx.doi.org/10.1002/jrs.2465.

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15

Milyaev, M. A., N. S. Bannikova, L. I. Naumova, et al. "Effective Co-rich ternary CoFeNi alloys for spintronics application." Journal of Alloys and Compounds 854 (February 2021): 157171. http://dx.doi.org/10.1016/j.jallcom.2020.157171.

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16

Lu, Xiang-Qian, Chuan-Kui Wang, and Xiao-Xiao Fu. "Modulating the electronic structures of blue phosphorene towards spintronics." Physical Chemistry Chemical Physics 21, no. 22 (2019): 11755–63. http://dx.doi.org/10.1039/c9cp01684h.

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17

Garifullin, I. A. "The superconductor/ferromagnet proximity effect and its potential application in spintronics." Uspekhi Fizicheskih Nauk 176, no. 6 (2006): 676. http://dx.doi.org/10.3367/ufnr.0176.200606l.0676.

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18

Li, Jingyu, Guangbiao Zhang, Chengxiao Peng, et al. "Magneto-Seebeck effect in Co2FeAl/MgO/Co2FeAl: first-principles calculations." Physical Chemistry Chemical Physics 21, no. 10 (2019): 5803–12. http://dx.doi.org/10.1039/c8cp07697a.

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19

Banerjee, Mahasweta, Ayan Mukherjee, Amit Banerjee, Debajyoti Das, and Soumen Basu. "Enhancement of multiferroic properties and unusual magnetic phase transition in Eu doped bismuth ferrite nanoparticles." New Journal of Chemistry 41, no. 19 (2017): 10985–91. http://dx.doi.org/10.1039/c7nj02769a.

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20

Yu, Xing, Fanqiang Chen, Zhizhou Yu, and Yafei Li. "Enhanced robustness of half-metallicity in VBr3 nanowires by strains and transition metal doping." Physical Chemistry Chemical Physics 22, no. 42 (2020): 24455–61. http://dx.doi.org/10.1039/d0cp04764c.

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21

Gandhi, Ashish Chhaganlal, and Sheng Yun Wu. "Unidirectional anisotropy mediated giant memory effect in antiferromagnetic Cr2O3 nanorods." RSC Advances 7, no. 41 (2017): 25512–18. http://dx.doi.org/10.1039/c7ra03934d.

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Investigating the mechanism of unidirectional anisotropy mediated giant memory effect in antiferromagnetic (AF) transition metal oxide is a matter of importance for its future application in spintronics.
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22

Miyao, Masanobu, Koji Ueda, Yu-ichiro Ando, et al. "Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application." Thin Solid Films 517, no. 1 (2008): 181–83. http://dx.doi.org/10.1016/j.tsf.2008.08.055.

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23

Annese, Emilia, Thiago J. A. Mori, Pedro Schio, Benjamin Rache Salles, and Julio C. Cezar. "Fe-Phthalocyanine Nanoclusters on La0.67Sr0.33MnO3 Ferromagnetic Substrate for Spintronics Application." ACS Applied Nano Materials 3, no. 2 (2020): 1516–25. http://dx.doi.org/10.1021/acsanm.9b02319.

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24

Siakeng, Lalrinkima, Gennady M. Mikhailov, and D. P. Rai. "Electronic, elastic and X-ray spectroscopic properties of direct and inverse full Heusler compounds Co2FeAl and Fe2CoAl, promising materials for spintronic applications: a DFT+U approach." Journal of Materials Chemistry C 6, no. 38 (2018): 10341–49. http://dx.doi.org/10.1039/c8tc02530d.

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25

Aryal, Sandip, and Ranjit Pati. "Spin filtering with Mn-doped Ge-core/Si-shell nanowires." Nanoscale Advances 2, no. 5 (2020): 1843–49. http://dx.doi.org/10.1039/c9na00803a.

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26

Zhang, Ying, Wenhui Wang, Meng Huang, et al. "MnPS3 spin-flop transition-induced anomalous Hall effect in graphite flake via van der Waals proximity coupling." Nanoscale 12, no. 45 (2020): 23266–73. http://dx.doi.org/10.1039/d0nr05314g.

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Detection of the antiferromagnetic (AFM) state is an important issue for the application of two-dimensional (2D) antiferromagnets in spintronics, and interfacial exchange coupling is a highly efficient means to detect AFM order.
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27

Wang, Xiaotian, Zhenxiang Cheng, Gang Zhang, Minquan Kuang, Xiao-Lin Wang та Hong Chen. "Strain tuning of closed topological nodal lines and opposite pockets in quasi-two-dimensional α-phase FeSi2". Physical Chemistry Chemical Physics 22, № 24 (2020): 13650–58. http://dx.doi.org/10.1039/d0cp02334e.

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α-FeSi<sub>2</sub> is a valuable candidate for spintronics application by utilization of type I, type II, and hybrid-type topological nodal line semimetals in a single material tuned by mechanical strain.
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28

Stoica, Maria, and Cynthia S Lo. "P-type zinc oxide spinels: application to transparent conductors and spintronics." New Journal of Physics 16, no. 5 (2014): 055011. http://dx.doi.org/10.1088/1367-2630/16/5/055011.

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29

Wei, Qi, and Zhijun Ning. "Chiral Perovskite Spin-Optoelectronics and Spintronics: Toward Judicious Design and Application." ACS Materials Letters 3, no. 9 (2021): 1266–75. http://dx.doi.org/10.1021/acsmaterialslett.1c00274.

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30

Pan, F., C. Song, X. J. Liu, Y. C. Yang, and F. Zeng. "Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films." Materials Science and Engineering: R: Reports 62, no. 1 (2008): 1–35. http://dx.doi.org/10.1016/j.mser.2008.04.002.

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31

Feng, Yu, Zhou Cui, Bo Wu, Jianwei Li, Hongkuan Yuan, and Hong Chen. "Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti2NiAl." Beilstein Journal of Nanotechnology 10 (August 8, 2019): 1658–65. http://dx.doi.org/10.3762/bjnano.10.161.

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A Ti2NiAl inverse Heusler alloy based current-perpendicular-to-plane (CPP) spin valve (SV) with various kinds of atomic terminated interfaces has been designed to explore the potential application of Heusler alloys in spintronics devices. By performing first principles calculations combined with the nonequilibrium Green’s function, it is revealed that spin magnetic moments of interfacial atoms suffer a decrease, and the electronic structure shows that the TiNiB-terminated structure possesses the largest interface spin polarization of ≈55%. Our study on spin-transport properties indicates that
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32

Wang, Ke, Hai Wang, Min Zhang, Wei Zhao, Yan Liu, and Hongbo Qin. "The Electronic and Magnetic Properties of Multi-Atom Doped Black Phosphorene." Nanomaterials 9, no. 2 (2019): 311. http://dx.doi.org/10.3390/nano9020311.

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Recently, substitutional doping is proved to be an effective route to induce magnetism to black phosphorene for its application in spintronics. Herein, we investigate the thermodynamic stability, electronic and magnetic properties of doped black phosphorene with multi Al or Cl atoms using first-principles calculations. We find these doped phosphorenes are thermodynamically stable at 0 K and the stability first improves and then deteriorates with the number of dopant atom increasing. Corresponding to the variety of stability, the amount of electrons transferred between impurity and neighboring
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33

Thirupathi, C., S. Nithiyanantham, M. Sentilkumar, A. Arivudainambi, S. Mahalakshmi, and B. Natarajan. "Synthesis and Characterization of Co-Doped ZnO Diluted Magnetic Semiconductor for Spintronics Application." Advanced Science, Engineering and Medicine 12, no. 4 (2020): 524–29. http://dx.doi.org/10.1166/asem.2020.2554.

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The diluted magnetic semiconductor (DMS), are promising materials in the ferromagnetic exchange coupling between localized spins. ZnO nanoparticles in pure and cobalt doped with 2%, 4%, 6% and 8% were prepared through co-precipitation method at room temperature. XRD analysis showed the Co doped ZnO crystalizes in a wurzite structure. The particle size decreases with increase in concentration of cobalt. The SEM micrographs shows similar and regular equal in size depends with the increase of Co concentration and formation of spherical super structure and confirmed the Co2+ is completely replaced
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34

Feng, Wuwei, Xiao Fu, Caihua Wan, et al. "Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application." physica status solidi (RRL) - Rapid Research Letters 9, no. 11 (2015): 641–45. http://dx.doi.org/10.1002/pssr.201510340.

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35

Chattopadhyay, S., and T. K. Nath. "Electrical and magnetoelectronic properties of La0.7Sr0.3MnO3/SiO2/p-Si heterostructure for spintronics application." Current Applied Physics 11, no. 5 (2011): 1153–58. http://dx.doi.org/10.1016/j.cap.2011.02.009.

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36

Yang, Xin Sheng, Li Qin Yang, Li Lv, and Yong Zhao. "Preparation and Properties of Novel Bonded Perovskite Manganite Oxides." Advanced Materials Research 79-82 (August 2009): 1723–26. http://dx.doi.org/10.4028/www.scientific.net/amr.79-82.1723.

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The two-phase perovskite manganese composites have potential application in the field of spintronics, as the observed enhanced low-field magnetoresistance in this kind of composite. To prepare the real manganite-based two-phase composition, the concept of bonded perovskite manganese was put forward recently. In this article we review main research results in these bonded perovskite manganite oxide composites and give some expectation.
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37

LV, XIAO-RONG, SHI-HENG LIANG, LING-LING TAO, and XIU-FENG HAN. "ORGANIC SPINTRONICS: PAST, PRESENT AND FUTURE." SPIN 04, no. 02 (2014): 1440013. http://dx.doi.org/10.1142/s201032471440013x.

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Organic spintronics, extended the conventional spintronics with metals, oxides and semiconductors, has opened new routes to explore the important process of spin-injection, transport, manipulation and detection, holding significant promise of revolutionizing future spintronic applications in high density information storage, multi-functional devices, seamless integration, and quantum computing. Here we survey this fascinating field from some new viewpoints on research hotspots and emerging trends. The main achievements and challenges arising from spin injection and transport, in organic materi
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38

GAO, PAN, SUHANG LIU, LIN TIAN, and TIANXING MA. "QUANTUM MONTE CARLO STUDY OF MAGNETIC CORRELATION IN GRAPHENE NANORIBBONS AND QUANTUM DOTS." Modern Physics Letters B 27, no. 21 (2013): 1330016. http://dx.doi.org/10.1142/s0217984913300160.

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To realize the application of spintronics, possible magnetism in graphene-based material is an important issue to be addressed. At the tight banding level of armchair graphene nanoribbons, there are two flat bands in the band structure, two Van Hove singularities in the density of states, and the introducing of the next-nearest-neighbor hopping term cause high asymmetry in them, which plays a key role in the behavior of magnetic correlation. We further our studies within determinant quantum Monte Carlo simulation to treat the electron–electron interaction. It is found that the armchair graphen
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39

Wang, Tao, John Q. Xiao, and Xin Fan. "Spin–Orbit Torques in Metallic Magnetic Multilayers: Challenges and New Opportunities." SPIN 07, no. 03 (2017): 1740013. http://dx.doi.org/10.1142/s2010324717400136.

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Two decades after the discovery of the giant magnetoresistance that revolutionizes the hard disk drive, the rapid development of spin torque-based magnetic random access memory has once again demonstrated the great potential of spintronics in practical applications. While the industrial application is mainly focusing on the implementation of current-induced spin transfer torque (STT) in magnetic tunnel junctions, a new type of spin torque emerges due to the spin–orbit interaction in magnetic multilayers. A great effort has been devoted by the scientific community to study the so-called spin–or
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40

Panda, J., S. N. Saha, and T. K. Nath. "Room temperature giant positive junction magnetoresistance of NiFe2O4/n-Si heterojunction for spintronics application." Physica B: Condensed Matter 448 (September 2014): 184–87. http://dx.doi.org/10.1016/j.physb.2014.04.002.

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41

Merabet, B., O. M. Ozkendir, A. S. Hassanien, and M. A. Maleque. "Spin-orbit coupling effect on the electronic structure of Sr2FeHfO6 alloy for spintronics application." Journal of Magnetism and Magnetic Materials 518 (January 2021): 167374. http://dx.doi.org/10.1016/j.jmmm.2020.167374.

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42

Zhou, Guoqing, Guoqiang Tang, Tian Li, Guoxing Pan, Zanhong Deng, and Fapei Zhang. "Graphene-passivated cobalt as a spin-polarized electrode: growth and application to organic spintronics." Journal of Physics D: Applied Physics 50, no. 9 (2017): 095001. http://dx.doi.org/10.1088/1361-6463/aa5445.

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43

Hierro-Rodriguez, Aurelio, Doga Gürsoy, Charudatta Phatak, et al. "3D reconstruction of magnetization from dichroic soft X-ray transmission tomography." Journal of Synchrotron Radiation 25, no. 4 (2018): 1144–52. http://dx.doi.org/10.1107/s1600577518005829.

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The development of magnetic nanostructures for applications in spintronics requires methods capable of visualizing their magnetization. Soft X-ray magnetic imaging combined with circular magnetic dichroism allows nanostructures up to 100–300 nm in thickness to be probed with resolutions of 20–40 nm. Here a new iterative tomographic reconstruction method to extract the three-dimensional magnetization configuration from tomographic projections is presented. The vector field is reconstructed by using a modified algebraic reconstruction approach based on solving a set of linear equations in an ite
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44

Suzuki, Yoshishige, Hitoshi Kubota, Ashwin Tulapurkar, and Takayuki Nozaki. "Spin control by application of electric current and voltage in FeCo–MgO junctions." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1951 (2011): 3658–78. http://dx.doi.org/10.1098/rsta.2011.0190.

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Efficient control and detection of spins are the most important tasks in spintronics. The current and voltage applied to a magnetic tunnel junction may exert a torque on the magnetic thin layer in the junction and cause its reversal or continuous precession. The discovery of the giant tunnelling magnetoresistance effect in ferromagnetic tunnelling junctions using an MgO barrier enabled us to obtain a large signal output from the magnetization reversal and precession. Also, the interplay of large spin configuration–electric conduction coupling provides highly nonlinear effects like the spin-tor
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45

Xiao, Hai Mei, and Li Chun Shi. "The Application Research of Single-Molecule Magnets and Molecular Spin Electronics Materials." Advanced Materials Research 485 (February 2012): 522–25. http://dx.doi.org/10.4028/www.scientific.net/amr.485.522.

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In the basic and applied research, the electronics and spin degrees of freedom is a very promising field of research and development over the past decade, spintronics from fundamental physics to technical devices already have a great deal of progress. This study made an overview of the synthesis, structure and properties of single molecular magnets and their applications in molecular spin combined with the latest research on this study sphere. Single molecular magnets are made of inner magnetic nuclei and peripheral organic molecule lamella, which can improve physical and chemical properties b
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46

WANG, K. L., and P. KHALILI AMIRI. "NONVOLATILE SPINTRONICS: PERSPECTIVES ON INSTANT-ON NONVOLATILE NANOELECTRONIC SYSTEMS." SPIN 02, no. 02 (2012): 1250009. http://dx.doi.org/10.1142/s2010324712500099.

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Instant-on nonvolatile electronics, which can be powered on/off instantaneously without the loss of information, represents a new and emerging paradigm in electronics. Nonvolatile circuits consisting of volatile CMOS, combined with nonvolatile nanoscale magnetic memory, can make electronics nonvolatile at the gate, circuit and system levels. When high speed magnetic memory is embedded in CMOS logic circuits, it may help resolve the two major challenges faced in continuing CMOS scaling: Power dissipation and variability of devices. We will give a brief overview of the current challenges of CMOS
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47

Albani, Guglielmo, Alberto Calloni, Madan S. Jagadeesh, et al. "Ordered Porphyrin Arrays on Fe(001): An Enabling Technology for Future Spintronics." Proceedings 56, no. 1 (2020): 25. http://dx.doi.org/10.3390/proceedings2020056025.

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We give evidence of the formation of an ordered array of tetra-phenyl porphyrins (TPP) when these molecules are deposited on top of oxygen-passivated Fe(001), namely the Fe(001)-p(1 × 1)O surface. We also prove that they are magnetically coupled with the substrate. The ordered molecular packing, together with the magnetic coupling, are fundamental conditions for application in organic spintronic devices. The system is studied by means of spin-resolved photoemission spectroscopies and scanning tunneling microscopy.
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48

Oda, Tatsuki. "Development and application of the density functional approach with spin density magnetic dipole interaction." Impact 2020, no. 1 (2020): 30–31. http://dx.doi.org/10.21820/23987073.2020.1.30.

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Work on magnetism, spintronics and multiferroics has generated a great deal of new insight in the field of nanotechnology. According to Professor Tatsuki Oda, who is an expert in this field, one of the most important advancements is the new computational approach to assessing magnetic anisotropy energy (MAE) in antiferromagnets and ferrimagnets in realistic materials. Oda and his team from the Kanazawa University in Japan have taken this unique approach to achieve a world first - offering new tools to help researchers overcome the existing difficulties experienced in measuring antiferromagneti
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49

Panda, J., S. K. Giri, and T. K. Nath. "Electrical and Magneto-electronic Properties of p-La0.7Ca0.3MnO3/ SrTiO3/n-Si Heterostructure for Spintronics Application." IOP Conference Series: Materials Science and Engineering 73 (February 17, 2015): 012134. http://dx.doi.org/10.1088/1757-899x/73/1/012134.

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50

Chouhan, L., G. Bouzerar, and S. K. Srivastava. "Effect of Mg-doping in tailoring d0 ferromagnetism of rutile TiO2 compounds for spintronics application." Journal of Materials Science: Materials in Electronics 32, no. 8 (2021): 11193–201. http://dx.doi.org/10.1007/s10854-021-05784-y.

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