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Journal articles on the topic 'Spintronics'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

XU, Y. "Spintronics and spintronic materials overview." Current Opinion in Solid State and Materials Science 10, no. 2 (2006): 81–82. http://dx.doi.org/10.1016/j.cossms.2007.01.001.

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2

LV, XIAO-RONG, SHI-HENG LIANG, LING-LING TAO, and XIU-FENG HAN. "ORGANIC SPINTRONICS: PAST, PRESENT AND FUTURE." SPIN 04, no. 02 (2014): 1440013. http://dx.doi.org/10.1142/s201032471440013x.

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Organic spintronics, extended the conventional spintronics with metals, oxides and semiconductors, has opened new routes to explore the important process of spin-injection, transport, manipulation and detection, holding significant promise of revolutionizing future spintronic applications in high density information storage, multi-functional devices, seamless integration, and quantum computing. Here we survey this fascinating field from some new viewpoints on research hotspots and emerging trends. The main achievements and challenges arising from spin injection and transport, in organic materi

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3

Zlobin, I. S., V. V. Novikov, and Yu V. Nelyubina. "Coordination Compounds in Devices of Molecular Spintronics." Координационная химия 49, no. 1 (2023): 3–12. http://dx.doi.org/10.31857/s0132344x22700013.

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Spintronics, being one of the youngest fields of microelectronics, is applied already for several decades to enhance the efficiency of components of computer equipment and to develop units of quantum computer and other electronic devices. The use of molecular material layers in a spintronic device makes it possible to substantially deepen the understanding of the spin transport mechanisms and to form foundation for a new trend at the nexus of physics and chemistry: molecular spintronics. Since the appearance of this trend, various coordination compounds, including semiconductors, single-molecu

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4

Wang, Maorong, Yifan Zhang, Leilei Guo, Mengqi Lv, Peng Wang, and Xia Wang. "Spintronics Based Terahertz Sources." Crystals 12, no. 11 (2022): 1661. http://dx.doi.org/10.3390/cryst12111661.

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Terahertz (THz) sources, covering a range from about 0.1 to 10 THz, are key devices for applying terahertz technology. Spintronics-based THz sources, with the advantages of low cost, ultra-broadband, high efficiency, and tunable polarization, have attracted a great deal of attention recently. This paper reviews the emission mechanism, experimental implementation, performance optimization, manipulation, and applications of spintronic THz sources. The recent advances and existing problems in spintronic THz sources are fully present and discussed. This review is expected to be an introduction of

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5

Ivanov, V. A., T. G. Aminov, V. M. Novotortsev, and V. T. Kalinnikov. "Spintronics and spintronics materials." Russian Chemical Bulletin 53, no. 11 (2004): 2357–405. http://dx.doi.org/10.1007/s11172-005-0135-5.

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6

Guo, Lidan, Xianrong Gu, Xiangwei Zhu, and Xiangnan Sun. "Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices." Advanced Materials 31, no. 45 (2019): 1805355. http://dx.doi.org/10.1002/adma.201805355.

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7

Florea (Raduta), Ana-Maria, Stefan Caramizoiu, Ana-Maria Iordache, Stefan-Marian Iordache, and Bogdan Bita. "Solid-State Materials for Opto-Spintronics: Focus on Ferromagnets and 2D Materials." Solids 6, no. 2 (2025): 25. https://doi.org/10.3390/solids6020025.

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Opto-spintronics is an emerging field that focuses on harnessing light to manipulate and analyze electron spins to develop next-generation electronic devices. This paper explores recent progress and the role of solid-state materials in opto-spintronics by focusing on key classes of materials, such as ferromagnetic semiconductors, two-dimensional (2D) transition metal dichalcogenides (TMDCs), and topological insulators. It examines the unique properties of ferromagnetic and antiferromagnetic materials and their ability to interact with light to affect spin dynamics, offering potential for impro

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8

Drissi El Bouzaidi, M., and R. Ahl Laamara. "Exploring the half-metallic behavior and spintronic potential of Cr-doped CaTe." Bulletin of the Chemical Society of Ethiopia 39, no. 2 (2024): 341–50. http://dx.doi.org/10.4314/bcse.v39i2.12.

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The pursuit of miniaturized, high-performance electronic devices has intensified research into novel materials with extraordinary properties. While semiconductors lead the way in optoelectronics and energy harvesting, the burgeoning field of spintronics utilizing electron charge and spin promises revolutionary advances in information processing and storage. A critical component of spintronics is identifying materials with half-metallic behavior, characterized by complete spin polarization at the Fermi level. This study explores chromium (Cr)-doped CaTe as a candidate for half-metallic behavior

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9

Musa, Kanaan Mohammad. "ADVANCEMENTS AND APPLICATIONS IN SEMICONDUCTOR SPINTRONICS: HARNESSING ELECTRON SPIN FOR NEXT-GENERATION DEVICES." ORESTA 7, no. 2 (2024): 42–58. https://doi.org/10.5281/zenodo.15086486.

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<em>Today’s semiconductor devices use the charges of electrons and holes for tasks like light emission and signal processing. Semiconductor spintronics, a newer field, aims to exploit the spin of charge carriers to advance technologies like magnetic lasers, sensors, and transistors. Spintronics could enable the creation of memory, sensing, and logic devices with capabilities that charge-based devices can't match. This work explores the progress made with spintronic materials and devices, their current uses, and what the future might hold. A key feature of emerging spintronic logic device

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10

Wang, Chenying, Yujing Du, Yifan Zhao, et al. "Solar-Powered Switch of Antiferromagnetism/Ferromagnetism in Flexible Spintronics." Nanomaterials 13, no. 24 (2023): 3158. http://dx.doi.org/10.3390/nano13243158.

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The flexible electronics have application prospects in many fields, including as wearable devices and in structural detection. Spintronics possess the merits of a fast response and high integration density, opening up possibilities for various applications. However, the integration of miniaturization on flexible substrates is impeded inevitably due to the high Joule heat from high current density (1012 A/m2). In this study, a prototype flexible spintronic with device antiferromagnetic/ferromagnetic heterojunctions is proposed. The interlayer coupling strength can be obviously altered by sunlig

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11

Barla, Prashanth, Vinod Kumar Joshi, and Somashekara Bhat. "Spintronic devices: a promising alternative to CMOS devices." Journal of Computational Electronics 20, no. 2 (2021): 805–37. http://dx.doi.org/10.1007/s10825-020-01648-6.

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AbstractThe field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggr

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12

Fan, Yabin, and Kang L. Wang. "Spintronics Based on Topological Insulators." SPIN 06, no. 02 (2016): 1640001. http://dx.doi.org/10.1142/s2010324716400014.

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Spintronics using topological insulators (TIs) as strong spin–orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin–orbit torque (SOT)-induced m

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13

Johnson, Mark. "Spintronics." Journal of Physical Chemistry B 109, no. 30 (2005): 14278–91. http://dx.doi.org/10.1021/jp0580470.

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14

Awschalom, David D., Michael E. Flatté, and Nitin Samarth. "Spintronics." Scientific American 286, no. 6 (2002): 66–73. http://dx.doi.org/10.1038/scientificamerican0602-66.

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15

Grundler, Dirk. "Spintronics." Physics World 15, no. 4 (2002): 39–43. http://dx.doi.org/10.1088/2058-7058/15/4/38.

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16

Sarma, Sankar Das. "Spintronics." American Scientist 89, no. 6 (2001): 516. http://dx.doi.org/10.1511/2001.6.516.

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17

Bader, S. D., and S. S. P. Parkin. "Spintronics." Annual Review of Condensed Matter Physics 1, no. 1 (2010): 71–88. http://dx.doi.org/10.1146/annurev-conmatphys-070909-104123.

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18

Pulizzi, Fabio. "Spintronics." Nature Materials 11, no. 5 (2012): 367. http://dx.doi.org/10.1038/nmat3327.

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19

Kang, Wang, Yue Zhang, Zhaohao Wang, et al. "Spintronics." ACM Journal on Emerging Technologies in Computing Systems 12, no. 2 (2015): 1–42. http://dx.doi.org/10.1145/2663351.

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20

Flatte, Michael E. "Spintronics." IEEE Transactions on Electron Devices 54, no. 5 (2007): 907–20. http://dx.doi.org/10.1109/ted.2007.894376.

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21

Srinivasan, R. "Spintronics." Resonance 10, no. 9 (2005): 53–62. http://dx.doi.org/10.1007/bf02896321.

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22

Srinivasan, R. "Spintronics." Resonance 10, no. 11 (2005): 8–17. http://dx.doi.org/10.1007/bf02837641.

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23

Krause, Stefan. "Spintronics." Physik in unserer Zeit 51, no. 2 (2020): 100. http://dx.doi.org/10.1002/piuz.202070216.

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24

DasSarma, Sankar. "Spintronics." American Scientist 89, no. 6 (2001): 516. http://dx.doi.org/10.1511/2001.40.516.

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25

Mladenov, G., E. Koleva, V. Spivak, A. Bogdan, and S. Zelensky. "Prospects of spin transport electronics." Electronics and Communications 16, no. 3 (2011): 9–13. http://dx.doi.org/10.20535/2312-1807.2011.16.3.264053.

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This review provides basic information on spintronics. Briefly described the effects on which the development of spintronic nanoscale devices are based: giant magneto-resistance, spin-dependent tunnelling effect, transport of spin-polarized current, the creation of spinpolarized current torque for a magnetic switch and the motion of the magnetization of magnetic domains. As a example of successive applications spin-dependent devices are given parameters of magnetic memories based on use of spintronics components. It is shown that such memory is competitive to nowadays standard memories (at 90

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26

Seifert, Tom S., Liang Cheng, Zhengxing Wei, Tobias Kampfrath, and Jingbo Qi. "Spintronic sources of ultrashort terahertz electromagnetic pulses." Applied Physics Letters 120, no. 18 (2022): 180401. http://dx.doi.org/10.1063/5.0080357.

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Spintronic terahertz emitters are broadband and efficient sources of terahertz radiation, which emerged at the intersection of ultrafast spintronics and terahertz photonics. They are based on efficient spin-current generation, spin-to-charge-current conversion, and current-to-field conversion at terahertz rates. In this Editorial, we review the recent developments and applications, the current understanding of the physical processes, and the future challenges and perspectives of broadband spintronic terahertz emitters.

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27

Coileáin, Cormac Ó., and Han Chun Wu. "Materials, Devices and Spin Transfer Torque in Antiferromagnetic Spintronics: A Concise Review." SPIN 07, no. 03 (2017): 1740014. http://dx.doi.org/10.1142/s2010324717400148.

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From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic state

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28

Huang, Y. Q., V. Polojärvi, S. Hiura, et al. "(Invited) Quest for Fully Spin and Optically Polarized Semiconductor Nanostructures for Room-Temperature Opto-Spintronics." ECS Meeting Abstracts MA2023-02, no. 34 (2023): 1666. http://dx.doi.org/10.1149/ma2023-02341666mtgabs.

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Spintronics represents a new paradigm for future electronics, photonics and information technology, which explores the spin degree of freedom of the electron for information storage, processing and transfer. Since 1990s, we have witnessed great success of metal-based spintronics that has revolutionized the mass data storage industry. There has also been an enormous push for semiconductor spintronics during the past three decades, with the aim to capitalize the past and current success of charge-based semiconductor technology and to make its spin counterpart the backbone of future spintronics j

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29

Kumar, Prashant, Ravi Kumar, Sanjeev Kumar, et al. "Interacting with Futuristic Topological Quantum Materials: A Potential Candidate for Spintronics Devices." Magnetochemistry 9, no. 3 (2023): 73. http://dx.doi.org/10.3390/magnetochemistry9030073.

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Spintronics, also known as magneto-electronics or spin transport electronics, uses the magnetic moment of the electron due to intrinsic spin along with its electric charge. In the present review, the topological insulators (2D, 3D, and hydride) were discussed including the conducting edge of 2D topological insulators (TIs). Preparation methods of TIs along with fundamental properties, such as low power dissipation and spin polarized electrons, have been explored. Magnetic TIs have been extensively discussed and explained. Weyl phases, topological superconductors, and TIs are covered in this re

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30

Polley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, et al. "Progress toward picosecond on-chip magnetic memory." Applied Physics Letters 120, no. 14 (2022): 140501. http://dx.doi.org/10.1063/5.0083897.

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We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spint

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31

Pawar, Shweta, Hamootal Duadi, and Dror Fixler. "Recent Advances in the Spintronic Application of Carbon-Based Nanomaterials." Nanomaterials 13, no. 3 (2023): 598. http://dx.doi.org/10.3390/nano13030598.

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The term “carbon-based spintronics” mostly refers to the spin applications in carbon materials such as graphene, fullerene, carbon nitride, and carbon nanotubes. Carbon-based spintronics and their devices have undergone extraordinary development recently. The causes of spin relaxation and the characteristics of spin transport in carbon materials, namely for graphene and carbon nanotubes, have been the subject of several theoretical and experimental studies. This article gives a summary of the present state of research and technological advancements for spintronic applications in carbon-based m

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32

Wolf, S. A., Daryl Treger, and Almadena Chtchelkanova. "Spintronics: The Future of Data Storage?" MRS Bulletin 31, no. 5 (2006): 400–403. http://dx.doi.org/10.1557/mrs2006.101.

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AbstractReasearch and technology developments in the field of spintronics have grown tremendously in the past 10-15 years and already have had a major impact on the data storage industry.The future looks even brighter, as many new spintronic discoveries have been recently made that promise an even bigger impact in the future.This article summarizes the past accomplishments, describes some of the major discoveries that will have a lasting impact on the field, and discusses some of the technologies that may revolutionize data storage in the next decade.

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33

Yang, See-Hun, Ron Naaman, Yossi Paltiel, and Stuart S. P. Parkin. "Chiral spintronics." Nature Reviews Physics 3, no. 5 (2021): 328–43. http://dx.doi.org/10.1038/s42254-021-00302-9.

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34

Min, Byoung-Chul. "Silicon Spintronics." Journal of the Korean Magnetics Society 21, no. 2 (2011): 67–76. http://dx.doi.org/10.4283/jkms.2011.21.2.067.

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35

Kim, Se Kwon, Geoffrey S. D. Beach, Kyung-Jin Lee, Teruo Ono, Theo Rasing, and Hyunsoo Yang. "Ferrimagnetic spintronics." Nature Materials 21, no. 1 (2021): 24–34. http://dx.doi.org/10.1038/s41563-021-01139-4.

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36

Akinaga, H., and H. Ohno. "Semiconductor spintronics." IEEE Transactions on Nanotechnology 1, no. 1 (2002): 19–31. http://dx.doi.org/10.1109/tnano.2002.1005423.

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37

Han, Wei, Roland K. Kawakami, Martin Gmitra, and Jaroslav Fabian. "Graphene spintronics." Nature Nanotechnology 9, no. 10 (2014): 794–807. http://dx.doi.org/10.1038/nnano.2014.214.

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38

Jungwirth, T., X. Marti, P. Wadley, and J. Wunderlich. "Antiferromagnetic spintronics." Nature Nanotechnology 11, no. 3 (2016): 231–41. http://dx.doi.org/10.1038/nnano.2016.18.

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39

Fukami, Shunsuke, Virginia O. Lorenz, and Olena Gomonay. "Antiferromagnetic spintronics." Journal of Applied Physics 128, no. 7 (2020): 070401. http://dx.doi.org/10.1063/5.0023614.

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40

Cahay, M., and S. Bandyopadhyay. "Editorial: Spintronics." IEE Proceedings - Circuits, Devices and Systems 152, no. 4 (2005): 293. http://dx.doi.org/10.1049/ip-cds:20059068.

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41

Linder, Jacob, and Jason W. A. Robinson. "Superconducting spintronics." Nature Physics 11, no. 4 (2015): 307–15. http://dx.doi.org/10.1038/nphys3242.

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42

Chumak, A. V., V. I. Vasyuchka, A. A. Serga, and B. Hillebrands. "Magnon spintronics." Nature Physics 11, no. 6 (2015): 453–61. http://dx.doi.org/10.1038/nphys3347.

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43

Kleemann, W. "Magnetoelectric spintronics." Journal of Applied Physics 114, no. 2 (2013): 027013. http://dx.doi.org/10.1063/1.4811823.

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44

Yakhmi, Jatinder V., and Vaishali Bambole. "Molecular Spintronics." Solid State Phenomena 189 (June 2012): 95–127. http://dx.doi.org/10.4028/www.scientific.net/ssp.189.95.

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The emergence of spintronics (spin-based electronics), which exploits electronic charge as well as the spin degree of freedom to store/process data has already seen some of its fundamental results turned into actual devices during the last decade. Information encoded in spins persists even when the device is switched off; it can be manipulated with and without using magnetic fields and can be written using little energy. Eventually, spintronics aims at spin control of electrical properties (I-V characteristics), contrary to the common process of controlling the magnetization (spins) via applic

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45

APPELBAUM, IAN. "SILICON SPINTRONICS." International Journal of High Speed Electronics and Systems 18, no. 04 (2008): 853–59. http://dx.doi.org/10.1142/s0129156408005825.

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Recent advances in successful operation of silicon-based devices where transport is dependent on electron magnetic moment, or "spin", could provide a future alternative to CMOS for logic processing. The basics of this spin electronics (Spintronics) technology are discussed and the specific methods necessary for application to silicon are described. Fundamental measurements of spin polarization and spin precession are demonstrated.

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46

Bergenti, I., V. Dediu, M. Prezioso, and A. Riminucci. "Organic spintronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1948 (2011): 3054–68. http://dx.doi.org/10.1098/rsta.2011.0155.

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Organic semiconductors are emerging materials in the field of spintronics. Successful achievements include their use as a tunnel barrier in magnetoresistive tunnelling devices and as a medium for spin-polarized current in transport devices. In this paper, we give an overview of the basic concepts of spin transport in organic semiconductors and present the results obtained in the field, highlighting the open questions that have to be addressed in order to improve devices performance and reproducibility. The most challenging perspectives will be discussed and a possible evolution of organic spin

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47

Zwolak, M., and M. Di Ventra. "DNA spintronics." Applied Physics Letters 81, no. 5 (2002): 925–27. http://dx.doi.org/10.1063/1.1496504.

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48

Yu, Haiming, Jiang Xiao, and Philipp Pirro. "“Magnon Spintronics”." Journal of Magnetism and Magnetic Materials 450 (March 2018): 1–2. http://dx.doi.org/10.1016/j.jmmm.2017.12.033.

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49

Shiraishi, Masashi, and Tadaaki Ikoma. "Molecular spintronics." Physica E: Low-dimensional Systems and Nanostructures 43, no. 7 (2011): 1295–317. http://dx.doi.org/10.1016/j.physe.2011.02.010.

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50

Sanvito, Stefano. "Molecular spintronics." Chemical Society Reviews 40, no. 6 (2011): 3336. http://dx.doi.org/10.1039/c1cs15047b.

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