Relevant bibliographies by topics / Sputter Depth Profiling

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Sputter Depth Profiling'

Author: Grafiati
Published: 28 May 2022
Last updated: 31 July 2025

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Journal articles on the topic "Sputter Depth Profiling"

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Miller, R. G., C. Q. Bowles, P. L. Gutshall, and J. D. Eick. "The Effects of Ion Sputtering on Dentin and its Relation to Depth Profiling." Journal of Dental Research 73, no. 8 (1994): 1457–61. http://dx.doi.org/10.1177/00220345940730081001.

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Characterization of the dentin surface and the dentin/adhesive interface is fundamental to investigations concerning adhesive bonding to dentin. It has been shown that good adhesive bonding depends on both the structure and composition of the dentin surface. A combination of ion sputter etching and Auger electron spectroscopy can be used to obtain surface composition and elemental depth profiles at interfaces. This investigation was conducted to examine the changes induced in human dentin by ion sputtering under conditions commonly encountered during depth profiling. The sputtering was conduct
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López, F., M. V. García-Cuenca, J. M. Asensi, and J. L. Morenza. "Method for sputter rate determination in sputter depth profiling." Applied Surface Science 70-71 (June 1993): 68–72. http://dx.doi.org/10.1016/0169-4332(93)90400-6.

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Hofmann,, Siegfried. "Sputter Depth Profiling of Thin Films." High Temperature Materials and Processes 17, no. 1-2 (1998): 13–28. http://dx.doi.org/10.1515/htmp.1998.17.1-2.13.

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Wittmaack, K. "Recent advances in sputter depth profiling." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 3 (1986): 1662–65. http://dx.doi.org/10.1116/1.573989.

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Hofmann, Siegfried. "Profile reconstruction in sputter depth profiling." Thin Solid Films 398-399 (November 2001): 336–42. http://dx.doi.org/10.1016/s0040-6090(01)01340-2.

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Kosiba, R., G. Ecke, V. Cimalla, et al. "Sputter depth profiling of InN layers." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 215, no. 3-4 (2004): 486–94. http://dx.doi.org/10.1016/j.nimb.2003.08.039.

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Moulder, J. F., S. R. Bryan, and U. Roll. "Ultra thin film sputter depth profiling." Fresenius' Journal of Analytical Chemistry 365, no. 1-3 (1999): 83–84. http://dx.doi.org/10.1007/s002160051449.

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Hofmann, S., Y. Liu, W. Jian, H. L. Kang, and J. Y. Wang. "Depth resolution in sputter profiling revisited." Surface and Interface Analysis 48, no. 13 (2016): 1354–69. http://dx.doi.org/10.1002/sia.6039.

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Lee, Sang Yong. "Measurement of the Oxide Film on Cold Rolled Steel by XPS and TEM." Advanced Materials Research 774-776 (September 2013): 1141–44. http://dx.doi.org/10.4028/www.scientific.net/amr.774-776.1141.

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X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (TEM) with high annular dark-field (HAADF) microscopy have been used to characterize the nanoscale oxide film formed naturally on the surface of cold-rolled sheet of mild steel. Main aim of this research was to confirm that XPS could be used in determining the thickness of thin oxide film as a substitute for the laborious TEM analysis. The preparation and analysis technique for the XPS depth profiling has been investigated to characterize the oxide film. The selection of appropriate sputter rate and spu
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Hofmann, Siegfried, and Jiang Yong Wang. "Determination of the Depth Scale in Sputter Depth Profiling." Journal of Surface Analysis 9, no. 3 (2002): 306–9. http://dx.doi.org/10.1384/jsa.9.306.

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Dissertations / Theses on the topic "Sputter Depth Profiling"

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Tolstoguzov, A., B. Ber, P. Chapon, and M. N. Drozdov. "Depth Profiling of Multilayer Mo/Si Nanostructures." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35262.

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A round-robin characterization is reported on the sputter depth profiling of [60(3.0 nm Mo/ 0.3 nm B4C/ 3.7 nm Si)] and [60  (3.5 nm Mo/ 3.5 nm Si)] stacks deposited on Si (111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers and a pulsed radio frequency glow discharge optical emission spectrometer were used. The pros and cons of each instrumental approach are discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35262
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Willingham, David George Winograd Nicholas. "Strong-field photoionization of sputtered neutral molecules for chemical imaging and depth profiling." [University Park, Pa.] : Pennsylvania State University, 2009. http://etda.libraries.psu.edu/theses/approved/WorldWideIndex/ETD-4536/index.html.

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Book chapters on the topic "Sputter Depth Profiling"

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King, B. V. "Sputter Depth Profiling." In Springer Series in Surface Sciences. Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-662-05227-3_4.

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King, B. V. "Sputter Depth Profiling." In Springer Series in Surface Sciences. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-662-02767-7_4.

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Lesch, Norbert, Silvia Richter, and Peter Karduck. "EPMA Sputter Depth Profiling, Part II: Experiment." In Modern Developments and Applications in Microbeam Analysis. Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-7506-4_18.

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Richter, Silvia, Norbert Lesch, and Peter Karduck. "EPMA Sputter Depth Profiling, Part I: Theory and Evaluation." In Modern Developments and Applications in Microbeam Analysis. Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-7506-4_17.

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Ying, Ji-Feng, Mingsheng Zhang, Rong Ji, Huiqing Xie, and Jack Tsai. "Sensitivities of Depth Resolution to Sampling Depth and Sputter Ion Energy in XPS Depth Profiling." In PRICM. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118792148.ch427.

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Ying, Ji-Feng, Mingsheng Zhang, Rong Ji, Huiqing Xie, and Jack Tsai. "Sensitivities of Depth Resolution to Sampling Depth and Sputter Ion Energy in XPS Depth Profiling." In Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-48764-9_427.

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Vandervorst, W., J. Remmerie, F. R. Shepherd, and M. L. Swanson. "Sputter-Induced Segregation of As in Si During SIMS Depth Profiling." In Springer Series in Chemical Physics. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82724-2_75.

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Tanovic, L., N. Tanovic, and A. Zalar. "Investigation of Microtopography Induced during Sputter Depth Profiling of Ni/Cr Multilayered Structures." In Erosion and Growth of Solids Stimulated by Atom and Ion Beams. Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4422-0_10.

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Ballard, B. L., P. K. Predecki, T. R. Watkins, K. J. Kozaczek, D. N. Braski, and C. R. Hubbard. "Depth Profiling Biaxial Stresses in Sputter Deposited Molybdenum Films; Use of the Cos2ϕ Method." In Advances in X-Ray Analysis. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-5377-9_40.

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Kaiser, U., R. Jede, P. Sander, H. J. Schmidt, O. Ganschow, and A. Benninghoven. "Deterioration of Depth Resolution in Sputter Depth Profiling by Raster Scanning an Ion Beam at Oblique Incidence and Constant Slew Rate." In Springer Series in Chemical Physics. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82724-2_85.

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Conference papers on the topic "Sputter Depth Profiling"

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Abou-Hanna, Jeries, John Carlson, and Jose´ Lozano. "Chemistry Consistency Analysis of Tungsten-Doped Diamond-Like Carbon (DLC) Coatings." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-79136.

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Tungsten-doped diamond-like carbon (DLC) coatings have been magnetron sputtered onto 52100 steel with chromium and chromium/tungsten carbide dual interlayers using a Hauzer Techno Coating HTC 1200 4 UBM unbalanced magnetron deposition system. Internal fixturing to the deposition chamber rotates parts to be coated with a two degree of freedom system. By design, at certain intervals during the deposition, the acetylene flow is linearly altered to change film characteristics throughout the film. AES sputter depth profiling analysis shows that the fixture rotational system, designed to uniformly c
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Parks, J. E., L. J. Moore, M. T. Spaar, D. W. Beekman, and E. H. Taylor. "Ultratrace Solids Analyses Using Resonance Ionization Spectroscopy." In Laser Applications to Chemical Analysis. Optica Publishing Group, 1987. http://dx.doi.org/10.1364/laca.1987.tub1.

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Sputter initiated resonance ionization spectroscopy (SIRIS) is a new, ultrasensitive analytical technique for solids analysis, particularly in the fields of semiconductors, geophysics, biology, medicine, health physics, and basic science. SIRIS uses sputtering to atomize a solid sample and tunable dye lasers to selectively excite and ionize a selected element with the use of resonance ionization spectroscopy (RIS). The RIS process provides good sensitivity and allows interference-free measurements. The sensitivity is sufficiently high that analyses can be performed with a pulsed ion beam which
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Wise, Michael L., and Stephen W. Downey. "Characterization of Semiconductor Materials by the Photoionization of Sputtered Neutrals Using Ultra-High Laser Intensities." In Laser Applications to Chemical and Environmental Analysis. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/lacea.1996.lfb.6.

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The depth profiling of dopant concentrations across ultrathin device structures is critical to microelectronic device design and fabrication. Secondary Ion Mass Spectrometry (SIMS) remains an extremely important technique for semiconductor characterization. However, secondary ion production during sputtering is extremely dependent on matrix composition, complicating the characterization of elemental concentrations at or near the interfaces of two materials. For this reason, complementary analytical techniques referred to as Sputtered Neutrals Mass Spectrometry (SNMS) have been developed. In SN
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Downey, S. W., and R. S. Hozack. "Characterization of III-V Materials by Resonance Ionization Mass Spectrometry." In Laser Applications to Chemical Analysis. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/laca.1990.tub2.

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Layered, III-V compound semiconductors are important as both electrical and optical devices in communications technology. Often, these heterostructures have complicated elemental distributions that need quantitative characterization. Depth profiling by sputtering through these layered materials is one method of obtaining elemental distributions. Under optimum conditions, atoms are the predominantly sputtered product; the atom flux therefore provides information about the sample that is relatively free from chemical (matrix) interferences. Resonance Ionization Mass Spectrometry (RIMS) [1] is us
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Wise, Michael L., and Stephen W. Downey. "Factors Affecting Detection Sensitivities of Sputtered Neutrals Using Ultra-High Intensity Laser Post-Ionization." In Laser Applications to Chemical and Environmental Analysis. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/lacea.1996.lthd.8.

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Ultra high intensity post ionization mass spectrometry combines many positive features of secondary ionization mass spectrometry (SIMS) and sputtered neutral mass spectrometry (SNMS). All of these techniques use ion beam sputtering to sample the material or structure in question, affording both depth profiling and surface analysis with excellent depth resolution. Post-ionization is one form of SNMS, using a laser to photoionize sputtered atoms and is relatively free from SIMS-type matrix effects. The main question of ultra high intensity post ionization is can most or all elements be detected
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