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Journal articles on the topic 'Sputter Depth Profiling'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Miller, R. G., C. Q. Bowles, P. L. Gutshall, and J. D. Eick. "The Effects of Ion Sputtering on Dentin and its Relation to Depth Profiling." Journal of Dental Research 73, no. 8 (1994): 1457–61. http://dx.doi.org/10.1177/00220345940730081001.

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Characterization of the dentin surface and the dentin/adhesive interface is fundamental to investigations concerning adhesive bonding to dentin. It has been shown that good adhesive bonding depends on both the structure and composition of the dentin surface. A combination of ion sputter etching and Auger electron spectroscopy can be used to obtain surface composition and elemental depth profiles at interfaces. This investigation was conducted to examine the changes induced in human dentin by ion sputtering under conditions commonly encountered during depth profiling. The sputtering was conduct

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2

López, F., M. V. García-Cuenca, J. M. Asensi, and J. L. Morenza. "Method for sputter rate determination in sputter depth profiling." Applied Surface Science 70-71 (June 1993): 68–72. http://dx.doi.org/10.1016/0169-4332(93)90400-6.

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3

Hofmann,, Siegfried. "Sputter Depth Profiling of Thin Films." High Temperature Materials and Processes 17, no. 1-2 (1998): 13–28. http://dx.doi.org/10.1515/htmp.1998.17.1-2.13.

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4

Wittmaack, K. "Recent advances in sputter depth profiling." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 3 (1986): 1662–65. http://dx.doi.org/10.1116/1.573989.

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5

Hofmann, Siegfried. "Profile reconstruction in sputter depth profiling." Thin Solid Films 398-399 (November 2001): 336–42. http://dx.doi.org/10.1016/s0040-6090(01)01340-2.

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6

Kosiba, R., G. Ecke, V. Cimalla, et al. "Sputter depth profiling of InN layers." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 215, no. 3-4 (2004): 486–94. http://dx.doi.org/10.1016/j.nimb.2003.08.039.

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7

Moulder, J. F., S. R. Bryan, and U. Roll. "Ultra thin film sputter depth profiling." Fresenius' Journal of Analytical Chemistry 365, no. 1-3 (1999): 83–84. http://dx.doi.org/10.1007/s002160051449.

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8

Hofmann, S., Y. Liu, W. Jian, H. L. Kang, and J. Y. Wang. "Depth resolution in sputter profiling revisited." Surface and Interface Analysis 48, no. 13 (2016): 1354–69. http://dx.doi.org/10.1002/sia.6039.

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9

Lee, Sang Yong. "Measurement of the Oxide Film on Cold Rolled Steel by XPS and TEM." Advanced Materials Research 774-776 (September 2013): 1141–44. http://dx.doi.org/10.4028/www.scientific.net/amr.774-776.1141.

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X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (TEM) with high annular dark-field (HAADF) microscopy have been used to characterize the nanoscale oxide film formed naturally on the surface of cold-rolled sheet of mild steel. Main aim of this research was to confirm that XPS could be used in determining the thickness of thin oxide film as a substitute for the laborious TEM analysis. The preparation and analysis technique for the XPS depth profiling has been investigated to characterize the oxide film. The selection of appropriate sputter rate and spu

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10

Hofmann, Siegfried, and Jiang Yong Wang. "Determination of the Depth Scale in Sputter Depth Profiling." Journal of Surface Analysis 9, no. 3 (2002): 306–9. http://dx.doi.org/10.1384/jsa.9.306.

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11

Abe, Yoshimi. "Organic Depth Profiling by Cluster Ion Sputter." Journal of Surface Analysis 15, no. 3 (2009): 239–42. http://dx.doi.org/10.1384/jsa.15.239.

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12

Hofmann, S. "Sputter-depth profiling for thin-film analysis." Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences 362, no. 1814 (2003): 55–75. http://dx.doi.org/10.1098/rsta.2003.1304.

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13

Hofmann, Siegfried. "Characterization of nanolayers by sputter depth profiling." Applied Surface Science 241, no. 1-2 (2005): 113–21. http://dx.doi.org/10.1016/j.apsusc.2004.09.027.

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14

Hofmann, S. "Sputter depth profiling: past, present, and future." Surface and Interface Analysis 46, no. 10-11 (2014): 654–62. http://dx.doi.org/10.1002/sia.5489.

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15

Hofmann, Siegfried. "Advances in sputter depth profiling using AES." Surface and Interface Analysis 35, no. 7 (2003): 556–63. http://dx.doi.org/10.1002/sia.1574.

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16

Naziripour, Ali, and Art J. Nelson. "Diffusivity of Pt in BaxSrl-xTiO3 by XPS Compositional Depth Profiling." Advances in X-ray Analysis 39 (1995): 885–89. http://dx.doi.org/10.1154/s0376030800023375.

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This paper investigates the diffusion of Pt into polycrystalline thin-film BaxSr1-xTiO3 synthesized by sputter deposition and metal-organic deposition (MOD). Comparison of these two sets of films demonstrated that no remarkable interdiffusion was observed at the Pt/BSTO interface for the sputtered films. This is contrary to the films prepared by MOD which shows Pt has thoroughly diffused into BSTO films. The deeper diffusion of Pt into BSTO films prepared by MOD is attributed to die microstructure of these films. The effects of die diffusion on some physical properties have been discussed. Mor

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17

Carter, G., and M. J. Nobes. "The diffusion approximation applied to sputter depth profiling." Radiation Effects and Defects in Solids 138, no. 1-2 (1996): 1–16. http://dx.doi.org/10.1080/10420159608211504.

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18

Maciazek, Dawid, Robert J. Paruch, Zbigniew Postawa, and Barbara J. Garrison. "Micro- and Macroscopic Modeling of Sputter Depth Profiling." Journal of Physical Chemistry C 120, no. 44 (2016): 25473–80. http://dx.doi.org/10.1021/acs.jpcc.6b09228.

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19

Wucher, Andreas, and Nicholas Winograd. "Molecular sputter depth profiling using carbon cluster beams." Analytical and Bioanalytical Chemistry 396, no. 1 (2009): 105–14. http://dx.doi.org/10.1007/s00216-009-2971-x.

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20

Hues, Steven M., and Peter Williams. "Oxygen-induced segregation effects in sputter depth-profiling." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 15, no. 1-6 (1986): 206–9. http://dx.doi.org/10.1016/0168-583x(86)90286-7.

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21

Hill, Malcolm D. "Automated interface recognition in auger sputter depth profiling." Surface and Interface Analysis 12, no. 1 (1988): 21–26. http://dx.doi.org/10.1002/sia.740120107.

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22

Huang, Qing, Tianhang Gu, Airong Liu, Jing Liu, and Wei-xian Zhang. "Probing pollutant reactions at the iron surface: a case study on selenite reactions with nanoscale zero-valent iron." Environmental Science: Nano 8, no. 9 (2021): 2650–59. http://dx.doi.org/10.1039/d1en00458a.

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The speciation and distribution of Se in the oxide layer of nZVI were studied using high-resolution X-ray photoelectron spectroscopy with sputter depth profiling, and the speciation and distribution of Se were proved to be depth dependent.

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23

Hofmann, Siegfried, Feng-Min Zhong, Hao Yang, Jiang-Yong Wang, and Cong-Kang Xu. "Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation." Journal of Vacuum Science & Technology A 41, no. 1 (2023): 013408. http://dx.doi.org/10.1116/6.0002233.

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We are dealing with some new insights in the quantification of sputter depth profiles obtained by secondary ion mass spectroscopy, which can be easily extended to XPS or AES. Recent publications present a rather negative image of the mixing-roughness-information depth (MRI) model of quantitative sputter depth profile evaluation in conjunction with Dowsett’s up-and-down slope (UDS) model, at first we attempt to point out the merits of the MRI model. Since these publications come up with a new, alternative model [called roughness-mixing-recoil model (RMR)], we discuss in detail the flaws of both

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24

Petravić, M., B. G. Svensson, and J. S. Williams. "On the estimation of depth resolution during sputter profiling." Applied Physics Letters 62, no. 3 (1993): 278–80. http://dx.doi.org/10.1063/1.108989.

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25

Smith, H. E. "Sputter depth profiling of surface potentials in silicon semiconductors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 1 (1996): 305. http://dx.doi.org/10.1116/1.588466.

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26

Hofmann, S., Y. Liu, J. Y. Wang, and J. Kovac. "Analytical and numerical depth resolution functions in sputter profiling." Applied Surface Science 314 (September 2014): 942–55. http://dx.doi.org/10.1016/j.apsusc.2014.06.159.

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27

Richter, S., and Peter Karduck. "EPMA sputter depth profiling of an InGaAs-InP heterostructure." Fresenius' Journal of Analytical Chemistry 365, no. 1-3 (1999): 221–26. http://dx.doi.org/10.1007/s002160051477.

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28

Petravić, M. "Depth resolution during sputter profiling of Si in GaAs." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85, no. 1-4 (1994): 388–90. http://dx.doi.org/10.1016/0168-583x(94)95850-5.

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29

Zheng, Leiliang, Andreas Wucher, and Nicholas Winograd. "Retrospective sputter depth profiling using 3D mass spectral imaging." Surface and Interface Analysis 43, no. 1-2 (2010): 41–44. http://dx.doi.org/10.1002/sia.3509.

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30

Mitchell, D. F., J. S. Arlow, J. R. Phillips, and G. I. Sproule. "Optimized ion beam raster for SIMS sputter depth profiling." Surface and Interface Analysis 14, no. 6-7 (1989): 302–6. http://dx.doi.org/10.1002/sia.740140606.

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31

Carter, G. "Viscoelastic Relaxation and Sputter-depth Profiling of Amorphous Materials." Surface and Interface Analysis 25, no. 1 (1997): 36–40. http://dx.doi.org/10.1002/(sici)1096-9918(199701)25:1<36::aid-sia210>3.0.co;2-i.

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32

Cheng, Yang‐Tse, Audrey A. Dow, Bruce M. Clemens, and Eun‐Hee Cirlin. "Influence of ion mixing on the depth resolution of sputter depth profiling." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7, no. 3 (1989): 1641–45. http://dx.doi.org/10.1116/1.576064.

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33

Cheng, Yang‐Tse, Audrey A. Dow, and Bruce M. Clemens. "Effect of ion mixing on the depth resolution of sputter depth profiling." Applied Physics Letters 53, no. 14 (1988): 1346–48. http://dx.doi.org/10.1063/1.99977.

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34

Wang, J. Y., Y. Liu, S. Hofmann, and J. Kovac. "Influence of nonstationary atomic mixing on depth resolution in sputter depth profiling." Surface and Interface Analysis 44, no. 5 (2011): 569–72. http://dx.doi.org/10.1002/sia.3855.

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35

Cumpson, Peter J., Jose F. Portoles, Naoko Sano, and Anders J. Barlow. "X-ray enhanced sputter rates in argon cluster ion sputter-depth profiling of polymers." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 31, no. 2 (2013): 021208. http://dx.doi.org/10.1116/1.4793284.

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36

Scheithauer, U. "Improved sputter depth resolution in Auger composition-depth profiling of polycrystalline thin film systems using single grain depth profiling." Surface and Interface Analysis 39, no. 1 (2006): 39–44. http://dx.doi.org/10.1002/sia.2499.

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37

Baryshev, S. V., J. A. Klug, A. V. Zinovev, et al. "Measuring the roughness of buried interfaces by sputter depth profiling." Nanotechnology 24, no. 1 (2012): 015708. http://dx.doi.org/10.1088/0957-4484/24/1/015708.

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38

Kajiwara, K., and R. Shimizu. "Resolution in sputter depth profiling assessed by AlAs/GaAs superlattices." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13, no. 3 (1995): 1316–20. http://dx.doi.org/10.1116/1.579557.

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39

Dreer, Sabine, Peter Wilhartitz, Kurt Piplits, Herbert Hutter, Michael Kopnarski, and Gernot Friedbacher. "Quantitative Sputter Depth Profiling of Silicon- and Aluminium Oxynitride Films." Microchimica Acta 133, no. 1-4 (2000): 75–87. http://dx.doi.org/10.1007/s006040070075.

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40

Cao, Z. X. "Auger electron spectroscopy sputter depth profiling technique for binary solids." Surface Science 452, no. 1-3 (2000): 220–28. http://dx.doi.org/10.1016/s0039-6028(00)00343-5.

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41

Barla, K., D. Nicolas, R. Pantel, B. Vuillermoz, A. Straboni, and Y. Caratini. "Quantitative Auger sputter depth profiling of very thin nitrided oxide." Journal of Applied Physics 68, no. 7 (1990): 3635–42. http://dx.doi.org/10.1063/1.346326.

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42

Puranik, S. G., and B. V. King. "Sputter depth profiling of thin films with LEIS and LENRS." Applied Surface Science 28, no. 2 (1987): 180–86. http://dx.doi.org/10.1016/0169-4332(87)90063-8.

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43

Smith, Emily F., Jonathan D. P. Counsell, James Bailey, et al. "Sample rotation improves gas cluster sputter depth profiling of polymers." Surface and Interface Analysis 49, no. 10 (2017): 953–59. http://dx.doi.org/10.1002/sia.6250.

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44

Hofmann, S., J. Y. Wang, and A. Zalar. "Backscattering effect in quantitative AES sputter depth profiling of multilayers." Surface and Interface Analysis 39, no. 10 (2007): 787–97. http://dx.doi.org/10.1002/sia.2590.

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45

Wucher, Andreas. "A simple erosion dynamics model of molecular sputter depth profiling." Surface and Interface Analysis 40, no. 12 (2008): 1545–51. http://dx.doi.org/10.1002/sia.2933.

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46

Lee, Hyung-Ik, Dae Won Moon, Suhk Kun Oh, Hee Jae Kang, Hyun Kyong Kim, and Jeong Yun Won. "Sub-nm depth resolution in sputter depth profiling by low energy ion bombardment." e-Journal of Surface Science and Nanotechnology 2 (2004): 24–27. http://dx.doi.org/10.1380/ejssnt.2004.24.

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47

Hofmann, Jan P., Marcus Rohnke, and Bert M. Weckhuysen. "Recent advances in secondary ion mass spectrometry of solid acid catalysts: large zeolite crystals under bombardment." Phys. Chem. Chem. Phys. 16, no. 12 (2014): 5465–74. http://dx.doi.org/10.1039/c3cp54337d.

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Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is used for the characterization of heterogeneous catalysts. Large zeolite ZSM-5 crystals are discussed as a showcase system for solid acid catalysts and studied in high-resolution mass spectrometry, imaging, and sputter-depth profiling modes.

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48

Zayachuk, D. M., V. E. Slynko, and A. Csik. "Formation of the Sputtered Phase of PbTe Crystals by Ar+ Plasma and Re-deposition of the Sputtered Species at Secondary Neutral Mass Spectrometry Conditions." Фізика і хімія твердого тіла 18, no. 1 (2017): 21–28. http://dx.doi.org/10.15330/pcss.18.1.21-28.

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Formation of the Pb and Te sputtered phase under exposure of the lateral surface of PbTe crystals grown from melt by the Bridgman method by Ar+ plasma at Secondary Neutral Mass Spectrometry (SNMS) conditions and re-deposition of the sputtered species on the sputtering crystal surface are investigated. Experimental evidence of mutual influence of the sputtering and re-deposition processes on each other during prolonged depth profiling of PbTe crystals is presented. Sputtering of the PbTe crystal surface forms the strongly supersaturated sputtered phase of Pb and Te. Re-deposition of the Pb and

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49

Cumpson, Peter J., Jose F. Portoles, and Naoko Sano. "Observations on X-ray enhanced sputter rates in argon cluster ion sputter depth profiling of polymers." Surface and Interface Analysis 45, no. 2 (2012): 601–4. http://dx.doi.org/10.1002/sia.5198.

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50

Kesler, V., and S. Hofmann. "Improvement of the depth resolution in sputter depth profiling by elastic peak electron spectroscopy." Surface and Interface Analysis 33, no. 8 (2002): 635–39. http://dx.doi.org/10.1002/sia.1432.

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