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Chiu, K. F. "Ionised magnetron sputter deposition." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597619.
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The goal of this research work was to establish the Ionised Magnetron Sputter Deposition (IMSD) system and apply it to thin film fabrication. Using magnetron sputter deposition, with an additional built-in rf coil generating a rf coupled plasma to ionise sputtered atoms, the process provides a high level of control over the energy input to a growing film. The controllable parameters include ion flux, ion incident energy and the ratio of ions to neutrals of the depositing species. The possibility of depositing films and coatings with up to 85% of the depositing species as ions with energies controllable up to 150 eV offers a remarkable opportunity to engineer film growth and modify film properties by precisely controlled ion bombardment. The work presented here is concerned with the investigation and understanding of the basic properties of the IMSD process. It is composed of (1) a background introduction; (2) IMSD system characterisation; (3) characterisation of IMSD deposited metal thin films. Firstly, an introduction to magnetron sputtering and the effects of energetic bombardment on film properties, and a brief survey of ion assisted techniques are presented. The recently developed IMSD process is then introduced. The rf inductively coupled (RFI) plasma generated in the IMSD process was characterised using a single electrical probe. The RFI plasma is confined close to the substrate, and the bombarding ions are drawn directly from it, so that the plasma parameters are crucial to the ion bombardment on the substrate surface, in terms of ion flux and ion energy. It is found that the ion flux can be controlled by the power applied to the rf coil, which controls the ion density. The ion incident energy can be determined by the difference between plasma and substrate potentials. The ionisation fraction of the depositing flux (ratio of ions to total depositing atoms) has been measured by a parallel-plates method, which was developed here. The probe method was also employed later to confirm the measurement. Directionality of depositing flux was examined by depositing films into sub-micron vias and trenches.
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Schoff, Michael Elliott. "Sputter target erosion and its effects on long duration DC magnetron sputter coating." Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p1464930.
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Thesis (M.S.)--University of California, San Diego, 2009.<br>Title from first page of PDF file (viewed July 14, 2009). Available via ProQuest Digital Dissertations. Includes bibliographical references (p. 54-55).
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Junaid, Muhammad. "Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-84655.
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In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. For the growth of epitaxial GaN films two types of sputtering techniques, direct current (DC) magnetron sputtering and high power impulse magnetron sputtering (HiPIMS) were studied. The GaN epitaxial films grown by DC-MSE directly on to Al2O3(0001) in a mixture of Ar and N2, feature low threading dislocation densities on the order of ≤ 1010 cm-2, as determined by transmission electron microscopy (TEM) and modified Williamson-Hall plots. X-ray rocking curves reveal a narrow full-width at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence (PL) peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. GaN(0001) epitaxial films grown on Al2O3 substrates by HiPIMS deposition in a mixed N2/Ar discharge contain both strained domains and almost relaxed domains in the same epilayers, which was determined by a combination of x-ray diffraction (XRD), TEM, atomic force microscopy (AFM), μ-Raman microscopy, μ-PL, and Cathodoluminescence (CL). The almost fully relaxed domains show superior structural and optical properties evidenced by a rocking curves with full width at half maximum of 885 arc sec and a low temperature band edge luminescence at 3.47 eV with the FWHM of 10 meV. The other domain exhibits a 14 times higher isotropic strain component, which is due to higher densities of point and extended defects, resulting from bombardment of energetic species during growth. Single-crystal GaN(0001) nanorods have been grown directly on Si(111) substrates by DC-MSE in a pure N2environment. The as-grown GaN nanorods exhibit very high crystal quality from bottom to the top without any stacking faults, as determined by TEM. The crystal quality is found to increase with increasing working pressure. XRD results show that all the rods are highly 0001 oriented. All nanorods exhibit an N-polarity, as determined by convergent beam electron diffraction methods. Sharp and well-resolved 4 K μ-PL peaks at ~3.474 eV with a FWHM ranging from 1.7 meV to 22 meV are attributed to the intrinsic GaN band edge emission and corroborate the exceptional crystal quality of the material. Texture measurements reveal that the rods have random in-plane orientation when grown on Si(111) with its native oxide while they have an inplane epitaxial relationship of GaN[11̅20] // Si[1̅10] when grown on Si(111) without the surface oxide. The best structural and optical properties of the rods were achieved at N2 partial pressures of 15 to 20 mTorr. By diluting the reactive N2 working gas in DC-MSE with Ar, it is possible to achieve favorable growth conditions for high quality GaN nanorods onto Si(111) at a low total pressure of 5 mTorr. With an addition of small amount of Ar (0.5 mTorr), we observe an increase in nanorod aspect ratio from 8 to ~35, a decrease in average diameter from 74 nm to 35 nm, and a 2-fold increase in nanorod density compared to pure N2 conditions. By further dilution, the aspect ratio continuously decreases to 14 while the diameter increases to 60 nm and the nanorod density increases to a maximum of 2.4×109 cm-1. The changes in nanorod morphology upon Ar-dilution of the N2 working gas are explained by a transition from N-rich growth conditions, promoting the diffusion induced nanorods growth mode, to Ga-rich growth conditions, in qualitative agreement with GaN nanorods growth by MBE. At N2 partial pressure of 2.5 mTorr, the Ga-target is close to a non-poisoned state which gives the most perfect crystal quality which is reflected in an exceptionally narrow band edge emission at 3.479 eV with a FWHM of only 1.7 meV. Such structural and optical properties are comparable to rods previously grown at 3 to 4 time higher total working pressures of pure N2.
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Serban, Alexandra. "Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-141595.
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The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. Moreover, the ternary alloys (InGaN, InAlN and AlGaN) present the advantage of bandgap tuning, giving access to the whole visible spectrum, from near infrared into deep ultraviolet wavelengths. The intrinsic properties of III-nitride materials can be combined with characteristical features of nanodimension and geometry in nanorod structures. Moreover, nanorods offer the advantage of avoiding problems arising from the lack of native substrates, like lattice and thermal expansion, film – substrate mismatch. The growth and characterization of group III-nitride semiconductos nanorods, namely InAlN and GaN nanorods, is presented in this thesis. All the nanostructures were grown by employing direct-current reactive magnetron sputter epitaxy. InxAl1−xN self-assembled, core-shell nanorods on Si(111) substrates were demonstrated. A comprehensive study of temperature effect upon the morphology and composition of the nanorods was realized. The radial nanorod heterostructure consists of In-rich cores surrounded by Al-rich shells with different thicknesses. The spontaneous formation of core-shell nanorods is suggested to originate from phase separation due to spinodal decomposition. As the growth temperature increase, In desorption is favored, resulting in thicker Al-rich shells and larger nanorod diameters. Both self-assembled and selective-area grown GaN nanorods are presented. Self-assembled growth of GaN nanorods on cost-effective substrates offers a cheaper alternative and simplifies device processing. Successful growth of high- quality GaN (exhibiting strong bandedge emission and high crystalline quality) on conductive templates/substrates such as Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti is supported by the possibility to be used as electrodes when integrated in optoelectronic devices. The self-assembled growth leads to mainly random nucleation, resulting in nanorods with large varieties of diameters, heights and densities within a single growth run. This translates into non-uniform properties and complicates device processing. These problems can be circumvented by employing selective-area growth. Pre-patterned substrates by nano-sphere lithography resulted in GaN nanorods with controlled length, diameter, shape, and density. Well-faceted c-axis oriented GaN nanorods were grown directly onto the native SiOx layer inside nano-opening areas, exhibiting strong bandedge emission at room- temperature and single-mode lasing. Our studies on the growth mechanism revealed a different growth behavior when compared with selective-area grown GaN nanorods by MBE and MOCVD. The time-dependent growth series helped define a comprehensive growth mechanism from the initial thin wetting layer formed inside the openings, to the well-defined, uniform, hexagonal NRs resulted from the coalescence of multiple initial nuclei.
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Long, Yi. "Hardness of nitride thin films made by ionised magnetron sputter deposition." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614990.
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O'Kane, Chris. "Optimisation of RF magnetron sputter deposited calcium phosphate (Ca-P) thin films." Thesis, University of Ulster, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.535139.
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Perry, Duncan. "Optimisation of a closed-field unbalanced magnetron sputter process : titanium aluminium nitride." Thesis, University of Salford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308219.
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Žukauskaitė, Agnė. "Metastable ScAlN and YAlN Thin Films Grown by Reactive Magnetron Sputter Epitaxy." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-103832.
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Metastable ScxAl1-xN and YxAl1-xN thin films were deposited in an ultra high vacuum system using reactive magnetron sputter epitaxy from elemental Al, Sc, and Y targets in Ar/N2 gas mixture. Their structural, electrical, optical, mechanical, and piezoelectrical properties were investigated by using the transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, I-V and C-V measurements, nanoindentation, and two different techniques for piezoelectric characterization: piezoresponse force microscopy and double beam interferometry. Compared to AlN, improved electromechanical coupling and increase in piezoelectric response was found in ScxAl1-xN/TiN/Al2O3 structures with Sc content up to x=0.2. Decreasing the growth temperature down to 400 °C improved the microstructure and crystalline quality of the material. Microstructure of the films had a stronger influence on piezoelectric properties than the crystalline quality, which affected the leakage currents. When x was increased from x=0 to x=0.3, the hardness and reduced Young’s modulus Er showed a decrease from 17 GPa to 11 GPa, and 265 GPa down to 224 GPa, respectively. In ScxAl1-xN/InyAl1-yN superlattices, ScxAl1-xN layers negative lattice mismatched to In-rich InyAl1-yN were found to be stable at higher Sc concentration (x=0.4) than lattice-matched or positive lattice mismatched layers, confirmed by first principle (ab initio) calculations using density-functional formalism. Al-rich YxAl1-xN thin films were synthesized and reported for the first time. Formation of solid solution was observed up to x=0.22 and an increase in growth temperature up to 900°C improved the crystalline quality of the YxAl1-xN films. The band gap of YxAl1-xN decreased from 6.2 eV for AlN down to 4.5 eV (x=0.22) and was shown to follow Vegard’s rule. Refractive indices and extinction coefficients were also determined. Lattice constants of wurtzite YxAl1-xN measured experimentally are in good agreement with theoretical predictions obtained through ab initio calculations. The mixing enthalpy
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Ratova, Marina. "Enhanced properties of photocatalytic titania thin films via doping during magnetron sputter deposition." Thesis, Manchester Metropolitan University, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603487.
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Güttler, D. "Echtzeit-in-situ-Messung der Oberflächenbelegung einer Magnetron-Kathode bei der reaktiven Sputter-Abscheidung." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-61184.
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Reactive Sputtering is a widely used technique in processing of thin compound films. Such films can be sputtered from metal targets, which are comparatively cost efficient. Also the fact that sputtering from metal targets can ccur in the dc mode reduces the cost of the sputtering equipment. To keep the deposition process stable, its necessary to know the effects of target poisoning including its hyteresis behavior. The aim of this work was to nvestigate the evolution of reactive gas coverage on a titanium magnetron target surface, by real time, in-situ ion beam analysis during magnetron sputtering. A cylindrical 2 inch magnetron was used for reactive sputtering of TiN. It was operated in an Ar/N2 gas mixture at achamber pressure of about 3∙10-3 mbar. The argon/nitrogen flux ratio was variated between 0 and 20%. The nitrogen concentration on the target was determinated using the 14N(d, α)12C, nuclear reaction at a deuterium beam energy of 1.8 MeV. Depending on the adjusted nitrogen flow the target incorporation varies between 0 and about 1∙1016 N∙cm-2. Further the expected hysteresis behaviour ofnitrogen partial pressure, target voltage and nitrogen concentration at increasing/decreasing nitrogen gas flow is confirmed. The lateral distribution of nitrogen was measured across the diameter of target surface. In the zone of higher erosion (the \"race track\") the nitrogen concentration is 50% lower than in the middle or the edge of the target. A deposition zone in the center of the target could not be detected. By increasing the nitrogen flow into the chamber a saturation in nitrogen content in the target was found at an Ar/N2 flow ratio of about 10%. Assuming nitrogen implantation with a depth of 2.5 nm under the influence of typical target voltage during magnetron sputtering, this saturation is at a concentration value where stoichiomtric TiN is formed. Within the precision of the measurements, a mobile fraction of nitrogen could not determined. The concentration in the target remains unchanged after switching off the magnetron.
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Güttler, D. "Echtzeit-in-situ-Messung der Oberflächenbelegung einer Magnetron-Kathode bei der reaktiven Sputter-Abscheidung." Forschungszentrum Dresden-Rossendorf, 2004. https://hzdr.qucosa.de/id/qucosa%3A22122.
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Reactive Sputtering is a widely used technique in processing of thin compound films. Such films can be sputtered from metal targets, which are comparatively cost efficient. Also the fact that sputtering from metal targets can ccur in the dc mode reduces the cost of the sputtering equipment. To keep the deposition process stable, its necessary to know the effects of target poisoning including its hyteresis behavior. The aim of this work was to nvestigate the evolution of reactive gas coverage on a titanium magnetron target surface, by real time, in-situ ion beam analysis during magnetron sputtering. A cylindrical 2 inch magnetron was used for reactive sputtering of TiN. It was operated in an Ar/N2 gas mixture at achamber pressure of about 3∙10-3 mbar. The argon/nitrogen flux ratio was variated between 0 and 20%. The nitrogen concentration on the target was determinated using the 14N(d, α)12C, nuclear reaction at a deuterium beam energy of 1.8 MeV. Depending on the adjusted nitrogen flow the target incorporation varies between 0 and about 1∙1016 N∙cm-2. Further the expected hysteresis behaviour ofnitrogen partial pressure, target voltage and nitrogen concentration at increasing/decreasing nitrogen gas flow is confirmed. The lateral distribution of nitrogen was measured across the diameter of target surface. In the zone of higher erosion (the \"race track\") the nitrogen concentration is 50% lower than in the middle or the edge of the target. A deposition zone in the center of the target could not be detected. By increasing the nitrogen flow into the chamber a saturation in nitrogen content in the target was found at an Ar/N2 flow ratio of about 10%. Assuming nitrogen implantation with a depth of 2.5 nm under the influence of typical target voltage during magnetron sputtering, this saturation is at a concentration value where stoichiomtric TiN is formed. Within the precision of the measurements, a mobile fraction of nitrogen could not determined. The concentration in the target remains unchanged after switching off the magnetron.
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Wright, Jason. "Design and Implementation of DC Magnetron Sputter Deposition System and Hall Effect System Via LabView." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1417605695.
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Piascik, Jeffrey Robert Thompson Jeffrey Y. "Evaluation of structure and material properties of RF magnetron sputter-deposited yttria-stabilized zirconia thin films." Chapel Hill, N.C. : University of North Carolina at Chapel Hill, 2007. http://dc.lib.unc.edu/u?/etd,767.
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Thesis (Ph. D.)--University of North Carolina at Chapel Hill, 2007.<br>Title from electronic title page (viewed Dec. 18, 2007). "... in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Curriculum in Applied and Materials Sciences." Discipline: Applied and Materials Sciences; Department/School: Applied and Materials Sciences.
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Tungasmita, Sukkaneste. "Growth of wide-band gap AIN and (SiC)x(AIN)₁₋x thin films by reactive magnetron sputter deposition /." Linköping : Univ, 2001. http://www.bibl.liu.se/liupubl/disp/disp2001/tek711s.pdf.
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Höglund, Carina. "Reactive Magnetron Sputter Deposition and Characterization of Thin Films from the Ti-Al-N and Sc-Al-N Systems." Licentiate thesis, Linköping University, Linköping University, Thin Film Physics, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17683.
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<p>This Thesis treats the growth and characterization of ternary transition metal nitride thin films. The aim is to probe deeper into the Ti-Al-N system and to explore the novel Sc-Al-N system. Thin films were epitaxially grown by reactive magnetron sputtering from elemental targets onto single-crystal substrates covered with a seed layer. Elastic recoil detection analysis and Rutherford backscattering spectroscopy were used for compositional analysis and depth profiling. Different x-ray diffraction techniques were employed, ex situ using Cu radiation and in situ during deposition using synchrotron radiation, to identify phases, to obtain information about texture, and to determine the thickness and roughness evolution of layers during and after growth. Transmission electron microscopy was used for overview and lattice imaging, and to obtain lattice structure information by electron diffraction. Film properties were determined using van der Pauw measurements of the electrical resistivity, and nanoindentation for the materials hardness and elastic modulus. The epitaxial M<sub>n+1</sub>AX<sub>n</sub> phase Ti<sub>2</sub>AlN was synthesized by solid-state reaction during interdiffusion between sequentially deposited layers of (0001)-oriented AlN and Ti thin films. When annealing the sample, N and Al diffused into the Ti, forming Ti<sub>3</sub>AlN at 400 ºC and Ti2AlN at 500 ºC. The Ti<sub>2</sub>AlN formation temperature is 175 ºC lower than earlier reported results. Ti<sub>4</sub>AlN<sub>3</sub> thin films were, however, not possible to synthesize when depositing films with a Ti:Al:N ratios of 4:1:3. Substrate temperatures at 600 ºC yielded an irregularly stacked Tin+1AlNn layered structure because of the low mobility of Al adatoms. An increased temperature led, however, to an Al deficiency due to an out diffusion of Al atoms, and formation of Ti<sub>2</sub>AlN phase and Ti<sub>1-x</sub>Alx<sub>N</sub> cubic solid solution. In the Sc-Al-N system the first ternary phase was discovered, namely the perovskite Sc<sub>3</sub>AlN, with a unit cell of 4.40 Å. Its existence was supported by ab initio calculations of the enthalpy showing that Sc3AlN is thermodynamically stable with respect to the binaries. Sc3AlN thin films were experimentally found to have a hardness of 14.2 GPa, an elastic modulus of 21 GPa, and a room temperature resistivity of 41.2 μΩcm.</p>
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Braun, Stefan. "Gefüge- und Grenzflächenbeschaffenheit von Mo/Si-Multischichten, synthetisiert mittels Puls-Laser- und Magnetron-Sputter-Deposition : Spiegel für extrem ultraviolette Strahlung." LF, 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=971281130.
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Sohail, Hafiz Muhammad. "Growth of Pt/Mg Multilayer X-ray Mirrors : Effects of Sputter Yield Amplification." Thesis, Linköping University, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17392.
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<p>This thesis report is focused on the growth of Pt/Mg multilayers and the studies of the sputter yield amplification effect in these. The main application is to use the multilayers as X-ray mirrors reflecting an X-ray wavelength of 17 Å. This wavelength is important for astronomical applications in general, and solar imaging applications in particular.</p><p>For periodic X-ray multilayer mirrors only a certain specific wavelength of X-rays can be reflected. What wavelength that is reflected depends on the individual layer thicknesses of the materials that are constituting the multilayer. These thicknesses can be determined using modified Bragg’s law and are approximately a quarter of the wavelength.</p><p>In order to obtain the exact desired layer thickness of each individual layer it is necessary to understand the growth processes and the effects that are going on during deposition of such multilayer mirrors. It has been shown that when depositing multilayers consisting of one very light and one very heavy material, like e.g. Pt and Mg, the deposition rate of the light element is non-linear with deposition time for thin layers. This is because of backscattered energetic neutrals from the heavy target material, which affects the growing film. Furthermore, a sputter yield amplification is present for thin layers when a light element is grown on top of a heavy element, i.e. for Mg on top of Pt.</p><p>Dual DC magnetron sputtering has been used to grow the Pt/Mg multilayers, and the influence of the backscattered energetic neutrals and the sputter yield amplification effect has been studied for Ar and Kr sputtering gases at pressures ranging from 3 up to 9 mTorr. The individual layer thicknesses have been obtained from simulations of hard X-ray reflectivity measurements using the IMD program. The number of backscattered energetic neutrals and their energies at the target have been calculated using the TRIM code.</p><p>Using the results obtained it is now possible to predict and compensate for the non-linear deposition rate of Mg.</p>
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Le, Coz Thomas. "Fonctionnalisation d'un fil métallique par croissance de films minces dans un magnétron cylindrique inversé." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAI016.
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Les travaux présentés dans ce manuscrit traitent de l’optimisation du procédé de dépôt de couches minces sur un fil d’acier inoxydable en mouvement. Deux magnétrons cylindriques inversés (ICM) sont utilisés pour étudier différents aspects de la pulvérisation cathodique. Dans un premier temps, un modèle analytique permettant l’évaluation des contributions thermiques à l’échauffement du substrat est confronté à des séries de mesures. Les résultats obtenus sont concluants mais souffrent de l’inhomogénéité du champ magnétique, lequel est à l’origine de pertes localisées d’électrons secondaires de haute énergie. Afin de limiter la contribution thermique des charges sur le substrat, des anodes auxiliaires, destinées à récupérer le flux d’énergie, sont ajoutées à chaque extrémité des magnétrons. Leur influence sur la distribution du plasma, sur la microstructure et sur la composition chimique des dépôts est alors discutée. Dans une seconde partie, l’étude des magnétrons lors de dépôts réactifs met en avant la nécessité d’homogénéiser le champ magnétique dans les cathodes. Une discussion est alors conduite sur l’influence du champ magnétique sur la distribution des vitesses de dépôt au sein des magnétrons et un modèle analytique, ayant pour but de reproduire les profils de dépôt, est développé sur la base des résultats obtenus. Une étude paramétrique (pression, distance cible – substrat, intensité du champ magnétique) est aussi réalisée afin de déterminer les conditions de dépôt optimales dans un ICM. Finalement, de la modélisation par éléments finis à l’aide d’un logiciel commercial vient clore le manuscrit<br>The work presented in this manuscript deals with the optimization of the process of deposition of thin films on a moving stainless steel wire. Two inverted cylindrical magnetrons (ICMs) are used to study different aspects of sputtering. At first, an analytical model allowing the evaluation of the thermal contributions to the heating of the substrate is confronted with series of measurements. The results obtained are conclusive but suffer from the inhomogeneity of the magnetic field, which is responsible for the localized loss of high energy secondary electrons. In order to limit the thermal contribution of the charges on the substrate, auxiliary anodes designed to recover the energy flow, are added to each end of the magnetrons. Their influence on the plasma distribution, the microstructure and the chemical composition of the coatings is then discussed. In a second part, the study of reactive sputter deposition with ICMs highlights the need to homogenize the magnetic field in the cathodes. A discussion is then conducted on the influence of the magnetic field on the distribution of deposition rates within the magnetrons and an analytical model, aimed at reproducing the deposition profiles, is developed on the basis of the results obtained. A parametric study (pressure, target – substrate distance, magnetic field strength) is also performed to determine optimal deposition conditions in an ICM. Finally, finite element modeling using commercial software closes the manuscript
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Weichsel, Tim. "Entwicklung und Charakterisierung einer Elektron-Zyklotron-Resonanz-Ionenquelle mit integriertem Sputtermagnetron für die Erzeugung intensiver Ströme einfach geladener Aluminiumionen." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-206003.
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Es wurde eine Elektron-Zyklotron-Resonanz-Ionenquelle mit einer Mikrowellenfrequenz von2,45 GHz für die Produktion intensiver Ströme einfach geladener Metallionen entwickelt. Deren Beladung mit Metalldampf erfolgt über ein integriertes zylindrisches Sputtermagnetron, welches speziell für diese Aufgabe entworfen wurde. Die entstandene MECRIS, engl. Magnetron Electron Cyclotron Resonance Ion Source, vereinigt die ECR-Ionenquellentechnologie mit der Magnetron-Sputtertechnologie auf bisher einzigartige Weise und verkörpert so ein neues Metallionen-Quellenkonzept. Unter Verwendung eines Al-Sputtertargets konnte die Funktionsfähigkeit der MECRIS an dem Beispiel der Al+-Ionenerzeugung erfolgreich demonstriert werden. Der extrahierbare Al+-Ionenstrom wurde über einen neuartigen, im Rahmen der Arbeit entwickelten, Hochstrom-Faraday-Cup gemessen. Auf Basis numerischer Berechnungen wurde das Gesamtmagnetfeld so ausgelegt, dass die Permanentmagnete des Magnetrons und die Spulen der ECR-Quelle eine Minimum-B-Struktur erzeugen, welche einen effektiven Elektroneneinschluss nach dem magnetischen Spiegelprinzip ermöglicht. Gleichzeitig wird durch eine geschlossene ECR-Fläche, mit der magnetischen Resonanzflussdichte von 87,5 mT, eine optimale Heizung der Plasmaelektronen realisiert. Die mithilfe einer Doppel-Langmuir-Sonde gemessene Elektronentemperatur steigt in Richtung Quellenmitte an und beträgt maximal 11 eV. Geheizte Elektronen erlauben die effiziente Stoßionisation der Al-Atome, welche mit einer Rate von über 1E18 Al-Atome/s eingespeist werden und eine höchstmögliche Dichte von 2E10 1/cm³ aufweisen. Die MECRIS erzeugt hauptsächlich einfach geladene Ionen des gesputterten Materials (Al+) und des Prozessgases (Ar+). Der Al+-Ionenextraktionsstrom ist über die Erhöhung der Prozessparameter Sputterleistung, Mikrowellenleistung, Spulenstrom und Extraktionsspannung um eine Größenordnung bis auf maximal 135 μA steigerbar, was einer Stromdichte von 270 μA/cm² über die Extraktionsfläche von rund 0,5 cm² entspricht. Dies steht im Einklang mit der Prozessparameterabhängigkeit der anhand der Sonde bestimmten Plasmadichte, welche einen größtmöglichen Wert von etwa 6E11 1/cm³ annimmt. Das Verhältnis von extrahiertem Al+- zu Ar+-Ionenstrom kann durch Optimierung der Prozessparameter von 0,3 auf maximal 2 angehoben werden. Sondenmessungen des entsprechenden Ionendichteverhältnisses bestätigen diesen Sachverhalt. Um möglichst große Extraktionsströme und Al+/Ar+-Verhältnisse zu generieren, muss die ECR-Fläche demnach in dem Bereich der höchsten Al-Atomdichte in der Targetebene lokalisiert sein. Gegenüber dem alleinigen Magnetronplasma (ohne Mikrowelleneinspeisung) können mit dem MECRIS-Plasma um bis zu 140 % höhere Al+-Ionenströme produziert werden. Aus Sondenuntersuchungen geht hervor, dass dies eine Folge der um etwa eine Größenordnung gesteigerten Plasmadichte und der um rund 7 eV größeren Elektronentemperatur des MECRIS-Plasmas ist. Das MECRIS-Plasma wurde außerdem mittels optischer Emissionsspektroskopie charakterisiert und durch ein globales sowie ein zweidimensionales Modell simuliert. Die gewonnenen Prozessparameterabhängigkeiten der Plasmadichte, Elektronentemperatur sowie Al+- und Ar+-Ionendichte stimmen mit den Sondenergebnissen überein. Teilweise treten jedoch Absolutwertunterschiede von bis zu zwei Größenordnungen auf. Die Erhöhung der Sputterleistung und Extraktionsspannung über die derzeitigen Grenzen von 10 kW bzw. 30 kV sowie die Optimierung der Extraktionseinheit hinsichtlich minimaler Elektrodenblindströme bietet das Potential, den Al+-Ionenstrom bis in den mA-Bereich zu steigern<br>An electron cyclotron resonance ion source working at a microwave frequency of 2.45 GHz has been developed in order to generate an intense current of singly charged metal ions. It is loaded with metal vapor by an integrated cylindrical sputter magnetron, which was especially designed for this purpose. The MECRIS (Magnetron Electron Cyclotron Resonance Ion Source) merges ECR ion source technology with sputter magnetron technology in a unique manner representing a new metal ion source concept. By using an Al sputter target, the efficiency of the MECRIS was demonstrated successfully for the example of Al+ ion production. The extractable ion current was measured by a newly developed high-current Faraday cup. On the basis of numerical modeling, the total magnetic field was set in a way that the permanent magnets of the magnetron and the coils of the ECR source are forming a minimum-B-structure, providing an effective electron trap by the magnetic mirror principle. Simultaneously, optimal electron heating is achieved by a closed ECR-surface at resonant magnetic flux density of 87.5 mT. Electron temperature increases towards the center of the source to a maximum of about 11 eV and was measured by a double Langmuir probe. Due to the heated electron population, efficient electron impact ionization of the Al atoms is accomplished. Al atoms are injected with a rate of more than 1E18 Al-atoms/s resulting in a maximum Al atom density of 2E10 1/cm³. The MECRIS produces mainly singly charged ions of the sputtered material (Al+) and the process gas (Ar+). The Al+ ion extraction current is elevated by one order of magnitude to a maximum of 135 μA by increasing the process parameters sputter magnetron power, microwave power, coil current, and acceleration voltage. Related to the extraction area of about 0.5 cm², the highest possible Al+ ion current density is 270 μA/cm². A corresponding process parameter dependency was found for the plasma density showing a peak value of about 6E11 1/cm³, which was deduced from probe measurements. The ratio of the extracted Al+ ion current to the Ar+ ion current can be enhanced from 0.3 to a maximum of 2 by optimization of the process parameters. This was confirmed by probe investigations of the appropriate ion density ratio. In conclusion, the ECR-surface needs to be located in the area of the highest Al atom density in the target plane in order to improve the extraction current and Al+/Ar+ ratio. The MECRIS plasma produces an Al+ ion current, which is up to 140 % higher compared to that of the sole sputter magnetron plasma (without microwave injection). As revealed by probe measurements, this effect is due to the higher plasma density and electron temperature of the MECRIS plasma, leading to a difference of one order of magnitude and 7 eV, respectively. Additionally, the MECRIS plasma has been characterized by optical emission spectroscopy and simulated by a global and a two-dimensional model. Retrieved process parameter dependencies of plasma density, electron temperature, Al+ ion density, and Ar+ ion density coincide with probe findings. Although a discrepancy of the absolute values of partly up to two orders of magnitude is evident. Potentially, the Al+ ion current can be enhanced to the mA-region by optimizing the ion extraction system for minimal idle electrode currents and by rising sputter magnetron power as well as acceleration voltage above the actual limits of 10 kW and 30 kV, respectively
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Bräuer, Jörg. "Erarbeitung eines Raumtemperatur-Waferbondverfahrens basierend auf integrierten und reaktiven nanoskaligen Multilagensystemen." Doctoral thesis, Universitätsbibliothek Chemnitz, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-132820.
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Die vorliegende Arbeit beschreibt einen neuartigen Fügeprozess, das sogenannte reaktive Fügen bzw. Bonden. Hierbei werden sich selbsterhaltene exotherme Reaktionen in nanoskaligen Schichtsystemen als lokale Wärmequelle für das Fügen unterschiedlichster Substrate der Mikrosystemtechnik verwendet. Das Bonden mit den reaktiven Systemen unterscheidet sich von herkömmlichen Verfahren der Aufbau- und Verbindungstechnik primär dadurch, dass durch die rasche Reaktionsausbreitung bei gleichzeitig kleinem Reaktionsvolumen die Fügetemperaturen unmittelbar auf die Fügefläche beschränkt bleiben. Entgegen den herkömmlichen Fügeverfahren mit Wärmeeintrag im Volumen, schont das neue Verfahren empfindliche Bauteile und Materialien mit unterschiedlichsten thermischen Ausdehnungskoeffizienten lassen sich besser verbinden.
In der vorliegenden Arbeit werden die Grundlagen zur Dimensionierung, Prozessierung und Integration der gesputterten reaktiven Materialsysteme beschrieben. Diese Systeme werden verwendet, um heterogene Materialien mit unterschiedlichen Durchmessern innerhalb kürzester Zeit auf Wafer-Ebene und bei Raumtemperatur zu bonden. Die so erzeugten Verbindungen werden hinsichtlich der Mikrostruktur, der Zuverlässigkeit sowie der Dichtheit untersucht und bewertet. Zusätzlich wird die Temperaturverteilung in der Fügezone während des Fügeprozesses mit numerischen Methoden vorhergesagt.
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Pflug, Andreas. "Simulation des reaktiven Magnetron-Sputterns /." Stuttgart : Fraunhofer-IRB-Verl, 2007. http://deposit.d-nb.de/cgi-bin/dokserv?id=2938746&prov=M&dok_var=1&dok_ext=htm.
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Ulucan, Savaş Özyüzer Lütfi. "Growth of magnetron sputtered superconductor MgB2 thin films/." [s.l.]: [s.n.], 2006. http://library.iyte.edu.tr/tezlerengelli/master/fizik/T000550.pdf.
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Maniate, Janet. "Fabrication and characterization of DC magnetron sputtered ZnO films." Thesis, McGill University, 2003. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=19737.
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In order to examine and improve conditions for the fabrication of ZnO thin films by dc magnetron sputtering for solar cell applications, film deposition time, Ar-02 gas inflow and concentration of O? in the Ar-02 gas admitted into the evacuated chamber, line flushing time, voltage at the cathode and the quantity of dopant added to the target were adjusted. Effectiveness of treatment was assessed by characterization of the films produced. When O2 gas incoming to the chamber was 0.1%, the optimum conditions for deposition of thin film ZnO were two hours of line flushing prior to sputtering, deposition duration of eight hours, applied voltage of 32 V ac and Ar-02 gas inflow rate of 131.5 mm/min. Sputtered from Zn with dopant unincorporated, sheet resistance of the best ZnO film obtained was 3.09 x 10 Q/D. Sputtering with dopant incorporated within the target, sheet resistance of the best ZnO film obtained was 2.57 x 102 Q/D. O2 gas admission of 1% produced, over the 400-1600 nm wavelength range studied, the highest optical transmission, in excess on the average of 80% through the films. Films that transmitted the most light, tended to have the largest sheet resistances, 10 Q/D or above. For constant O2 admission concentration, it was found that optical transmission tended to increase as ac applied voltage was lowered during deposition. During Hall effect measurement, carrier concentration of the films was found to increase with increase of the dopant concentration, with mean carrier concentration for the most highly doped ZnO film sample being 2.22 x 10 cm" . Carrier mobility obtained with a combination of film treatments was approximately nine times greater than by doping alone, suggesting that carrier mobility can be altered by combining treatments. After a combination of treatments, highest sample mean carrier mobility was 21.79 cm2V" V1. After doping alone, with other conditions not optimized, the most highly doped sample had mean carrier mobility of 2.41 cm V" s" . A decrease in sheet resistance of the order of magnitude of 104 Q/D was obtained after 320 minutes of sample annealing at 200° C. Following heat treatment, the highest carrier concentration obtained was 7.70 x 10 cm" . The highest mean mobility was 5.89 c m W .
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Zhou, Wei. "Oblique Angle Deposition Effects on Magnetron-Sputtered Metal Films." Miami University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=miami1501067883261477.
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Weber, Jörn Christian [Verfasser]. "Reaktive Abscheidung von SiOxNy-Schichten durch Puls-Magnetron-Sputtern / Jörn Christian Weber." München : Verlag Dr. Hut, 2010. http://d-nb.info/1222187760/34.
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Danson, Nigel. "Novel techniques for the control of the properties of reactively-sputtered thin films." Thesis, Loughborough University, 1996. https://dspace.lboro.ac.uk/2134/32871.
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Precise control techniques are of fundamental importance in the accurate deposition of optical, mechanical, electrical and magnetic thin films. The objective of this work was twofold: to devise and evaluate novel control systems for reactive sputtering primarily oxide films, and investigate the effects of these processes on resultant film properties.
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Trinh, David Huy. "Synthesis and Characterisation of Magnetron Sputtered Alumina-Zirconia Thin Films." Licentiate thesis, Linköping : Linköping University, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7513.
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Gerbig, Yvonne B. "Control of the nanostructure and microtribology of magnetron sputtered surfaces." Thesis, University of Warwick, 2006. http://wrap.warwick.ac.uk/66300/.
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The technological importance of hard thin films is well established. There is growing recognition that nanometre-scale surface structures can be controlled to the benefit of function. In-process structuring brings these ideas together. This study explores how the morphology, especially the surface topography, and microtribological behaviour of Cr-N films can be controlled during unbalanced magnetron (UBM) sputtering. Experiments varying the sputter power, bias voltage, temperature, total pressure and Ar/N2 ratio during UBM sputtering generated different compositions, crystallite orientations and microstructures, and six associated topography types: pyramidal (type P), grain-like (G), crater-like (CR), ribbon-like (R), conical (C) and hillock-like (H). A new empirical zone model consistently relates these topography types to process parameters. The feature dimensions are also controlled by the deposition parameters. The films have closely reproducible topographical and mechanical properties. The microtribological behaviour for three topography types (P, C and CR) is studied under different conditions relevant to unlubricated contacts, lubricated contacts, and humid environments. Nanostructured surfaces show significantly lower friction than smooth ones, with actual reductions depending on the topography type. Friction strongly correlates with summit density (Ssd). Low friction (Ssd ~ 3 #/µm2) was measured on all type CR surfaces, but only by increasing the lateral dimensions of types P and C. Unlubricated friction is attributed principally to solid-solid adhesion, influenced by the density and curvature of summits. Wear is influenced by the density, shape and size of the surface features and by the mechanical properties of the film. Boundary lubrication reduced friction, with slight dependence on lubricant. Alongside the summits parameters, friction correlates with core fluid retention index. Applying hydrophobic and hydrophilic treatments shows that appropriate nanostructuring reduces the dependence of friction on humidity and sliding velocity, principally by controlling the summit density. In-process structuring is clearly very useful for creating nanostructures in order to enhance the microtribological behaviour of surfaces. Further investigations are recommended into friction optimization by nanostructuring.
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Mei-ChingHuang and 黃美靜. "RF magnetron sputter deposition of BiCuSeO epitaxial films." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/sxa5ep.
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碩士<br>國立成功大學<br>材料科學及工程學系<br>106<br>In this study, we attempted to grow epitaxial BiCuSeO (BCSO) films on (110) and (001) SrTiO3 (STO) substrates as the bottom electrode for the growth of multiferroic BiFeO3 (BFO) films. In our previous attempts, BCSO films of two in-plane orientations were obtained owing to the rapid deposition rate. So, in this work, we used two methods to reduce the rate. One was placing a stainless steel mesh above the substrate in order to scatter the sputtered atoms. Another one was controlling shutter opening time to adjust deposition rate. The films grown with the mesh were mainly (001) orientated but contained some (110) orientation and yet the film surface was rough. The films grown with the shutter had a unique (001) texture when the substrate temperature was 400 C and the shutter opening and closing times were 1 and 30 seconds, respectively. High-resolution X-ray diffraction (HRXRD) confirmed that the (001) oriented films were in-plane aligned as well, i.e. the grown BCSO films were epitaxial. Although bulk BCSO had larger a/b axes than STO, HRXRD showed that the a/b axes of BCSO films were stretched rather than compressed. Similarly, the c-axis of films was slightly shortened instead of being elongated. This was probably related to oxygen deficiency in the films. Cross-sectional transmission electron microscopy confirmed the epitaxial relationship between BCSO film and STO substrate. The resistivity of films measured at room temperature was 2.02×10-2 Ohmcm, which was good enough as the electrode. It was found that (001) BCSO epitaxial films could also be grown on the (110) oriented STO substrates. The BCSO films on (110) STO could be grown at very high rate, but only at the substrate temperature of 500 C. The resistivity of the BCSO epitaxial films on (110) STO was higher (9.55×10-3 Ohmcm). Preliminary attempts were made to grow epitaxial BFO films on BCSO. Polycrystalline BFO films of a pure phase were obtained, but the epitaxial growth has yet to be achieved.
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Huang, Jun-Hang, and 黃俊翰. "Fabrication of ZnO nanostructure with RF magnetron sputter." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/64294241028491148655.
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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>93<br>ZnO is a wide band-gap semiconductor(~3.4ev) and has many application based on its piezoelectric, optical, electric properties. In recent years, nano-technology has been attached and many processes were reported for producing ZnO nano-structure. There are many reports focus on manufacturing ZnO nano-structure with chemical vapor deposition(CVD) and metal-organic chemical vapor deposition(MOCVD). However, the method for physical vapor deposition(PVD) is still deficient. We report a new method for fabricating ZnO nano structure only use RF magnetron sputter. When sputtering, hydrogen and argon mixture was used and the reduction behavior was observed clearly. The ZnO buffer layer and ZnMgO nucleation stabilization layer were deposited, finally, high quality ZnO nano-rod was formed on these two films and properties of ZnO nano-rod were measured and discussed.
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Hsia, Chen-Hsien, and 夏承賢. "Radio frequency magnetron sputter deposited TiOxNy thin film anodes." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/08587496808884144931.
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碩士<br>逢甲大學<br>材料科學與工程學系<br>101<br>Lithium ion secondary batteries have been the power supplies of varies portable electronic devices, such as digital cameras, smart phones, notebooks, and computers. However, the battery miniaturization of batteries has also been the trend for the development of new generation batteries.Smaller, lighter, thinner, and higher energy density batteries are always demanded by the industries.
In this research, Titanium dioxide thin films are chosen as the anode materials. Nitrogen doped TiO2 thin films were deposited by introduced nitrogen gas during deposition. The resulted TiOxNy thin films with various nitrogen contents have been characterized. The TiO2 thin films can be effectively doped with nitrogen by reactive sputtering, and the grain sizes become smaller as the nitrogen contents of the TiOxNy thin films increase. Therefore, the Li ion diffusion length is decreased and the interface area between electrode/electrolyte was greater. Electrochemical characteristics of TiOxNy thin films as anodes for lithium ion batteries have been investigated. The results show that the discharge capacity of TiOxNy thin films at 3.35 A/g (10 C-rate) high current density is one and a half times higher than TiO2 thin films under the optimal condition. The capacity retention was significantly improved. The results have demonstrated that the nitrogen doping can effective enhance the performance of TiOxNy thin films.
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Lin, Bo-Shun, and 林柏勳. "Rf magnetron sputter deposition of LiFePO4/C thin films." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/83944845425040391200.
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碩士<br>逢甲大學<br>材料科學所<br>94<br>Secondary lithium batteries have been the primary power supply components for various portable electronic devices, such as cell phones and notebook computers. However, as the weight and volume of the portable devices continuously decrease, the search for smaller, lighter, and higher power density power sources has never stopped. In order to meet these requirements, the concept of Thin Film Batteries (TFB), or all solid state micro-batteries, has therefore been of great interest. With only a few micron meters of thickness or less, thin film batteries are compatible with micron electro-mechanical devices, and can be the back-up power for SRAM, as well.
This research uses LiFePO4/C as cathode material of thin film batteries. Through substrate bias assist sputtering LiFePO4/C thin film, then control the energy of ion bombard to achieve in-situ modification. Moreover, it also uses vacuum annealing treatment to develop high capacity and high discharge voltage cathode materials, and increases electric conductivity of thin film effectively. The result shows that adding the titanium under layer can increase the crystalline of LiFePO4/C, and after anneal treatment, the LiFePO4/C thin film and titanium under layer have diffusion reciprocal, and adding the titanium under layer can have better cycle life and adhesion，but capacity lower then non-adding titanium under layer thin film.
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XU, YI-JIE, and 許奕傑. "Growth and Characterzation of ZnGa2O4 Film by Magnetron Sputter." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/a5k6g7.
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碩士<br>大葉大學<br>醫療器材設計與材料碩士學位學程<br>107<br>In this study, transparent conductive oxide Zinc gallate (ZnGa2O4) thin films were grown on Sapphire substrate by a radio frequency (RF) magnetron using a commercial ceramic target in a vacuum chamber. The structure, composition, and photoluminescence properties of the films were systematically investigated.
The ZnGa2O4 film was deposited at a working pressure of 7×10-3 torr, RF power of 150 W and the process temperature at room temperature for 1 hours. After thin film deposition process, the ZnGa2O4 were annealed at temperature range from 600 to 1000℃ in the air atmosphere. X-ray Diffraction (XRD) patterns of ZnGa2O4 thin films grown on sapphire substrate showed that the polycrystalline nature of the film with preferred ZnGa2O4 phase (111), (222) and (333) crystal planes (with diffraction intense peaks located at 18.57◦, 37.61◦ and 57.82◦, respectively) were obtained which is in constant with the reported data (JCPDS card file 38-1240). The transmittance of 180-nm thick ZnGa2O4 in UV-C (280 nm) is as high as 90% at the annealing temperature of 900°C.
Transmission Electron Microscope (TEM) analysis revealed that an interface by-products of amorphous layer was formed on Si(100) substrate and the microstructure of ZnGa2O4 become disorder. A strong ultraviolet photoluminescence peak (located at 340 nm) was observed on ZnGa2O4/sapphire(0001).The Photoluminescence (PL) properties of sputter deposited ZnGa2O4 thin film on sapphire have indicated that sapphire(0001) substrate is suitable for the growth high crystalline quality ZnGa2O4.
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YANG, JHIH-REN, and 楊智仁. "Zinc oxide thin film devices prepared by magnetron sputter." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/248kpf.
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碩士<br>明志科技大學<br>電子工程系碩士班<br>107<br>In this research, devices of aluminum-doped zinc oxide (AZO) were prepared by suitable thin film process. The technology of magnetron sputter was used to fabricate thin films of AZO and hafnium dioxide (HfO2). The characteristics of films were modulated by sputtering process parameters. Rapid thermal process (RTP) was used to improve the electrical properties of AZO film.
There are three sections in this study. First, the design of device structure and process will be discussed. The second section addresses the characteristics of AZO films process parameter of sputtering and RTP. The parameters, i.e. deposition pressure and sputtering power, were adjusted during sputtering. Then, the films were modified by RTP with annealing temperature and time. The film characteristics were studied by various analysis technologies including four-point probe, α-step, Hall effect analysis, UV-visible spectrophotometer, and XRD. The third section presents the device characteristics. The prepared devices were measured with semiconductor parameter analyzer (Keithley 4200) for the switching characteristics and electrical properties.
The resistivity of sputtered AZO film can be reduced to 4×10-3 Ω-cm which is suitable for the using of device electrode. The high mobility (~ 17 cm2/V-s) of sputtered AZO film was prepared for the channel layer of device. The sputtered films of AZO and HfO2 demonstrate the high transparence (> 80%) in the visible light range of 400nm~700nm and can be applied for transparent devices.
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Hsu, Chih-Sheng, and 徐智聖. "Synthesis and Characterization of Pulse Magnetron Sputter WTiOx Films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/29825838236699558361.
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碩士<br>明道大學<br>材料暨系統工程研究所<br>96<br>Tungsten oxide films were used popularly for electrochromic films, but it was easy to form tungsten oxide films impure when deposited. Tungsten would be existence at low price（W+4、W+5）. This study is in order to get high price tungsten ions （W+6） so dope titanium ions into WTiOx films. Titanium ions will be integrated with oxide in WTiOx films by interstitial. Tungsten can be existed in WTiOx films at the high price, it is better to make the electrochromic properties. In this study uses a pulsed sputtering deposition system, tungsten-titanium alloy target and tungsten and titanium dual targets as the material of target, to compare optical properties of WTiOx films.
X-ray diffraction analysis, WTiOx films are amorphous structures, when 400W and 500W of pulsed power by co-sputtering have crystallization. Can find the films are mainly on tungsten oxide, the contents of titanium oxide are too less not easy to find in X-ray diffraction analysis. From the results of FE-SEM （Field Emission Scattering Electron Microscopy） and AFM （Atomic Force Microscope）images, the roughness of WTiOx films increase as the pulsed power increase. The roughness decrease of 400W and 500W by co-sputtering, because crystallization relation, WTiOx films grain size growth so films become denser. XPS （X-ray photoelectron emission spectroscopy）results shows W+6 and Ti+4 existed in films. The results means that dope titanium ions can get high price tungsten ions in the films. In the optics analysis, the WTiOx films of tungsten-titanium alloy target have transmittance variation （△T） 64.22% and optical density （△OD） 0.846 in infrared light wave, the WTiOx films of tungsten and titanium dual targets have transmittance variation 70.31% and optical density 1.175.
Titanium oxide films are of critical importance for dye-sensitized solar cell （DSSC）.
Work electrode needs porous and the function of conducting the electron. In this study uses WTiOx porous films to be the work electrode, increase the surface roughness of films by change pulsed power. The best efficiency of tungsten-titanium alloy target is 0.05666%, the best efficiency of tungsten and titanium dual targets is 0.1567%.
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Liang, Yu-Han, and 梁譽瀚. "Fabrication and characteristics of ZnO nanodots by RF magnetron sputter." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/67944819264936879661.
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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>95<br>Low dimensional ZnO materials have been popularly investigated in the recent years because of remarkable quantum confinement effects and optoelectrical properties than the bulk counterpart. Until now, ZnO nanostructures are almost fabricated by chemical vapor deposition, and a simple and reliable process for fabricating ZnO nanostructures by physical vapor deposition is still lacking.
In this study, we report on the fabrication of Zn/ZnO nanodots and ZnO hexagonal pyramids directly on silicon substrates only by RF magnetron sputtering. In this process, we utilized Ar/H2 mixture gas as reaction plasma and/or precisely controlled the process parameters, such as substrate bias and growth temperature…etc., to fabricate the high quality Zn/ZnO nanodots and ZnO hexagonal pyramids on silicon substrates. Furthermore, we successfully grow one dimensional Al-doped ZnO nanorods or nanowires on the tips of the ZnO hexagonal pyramids by chemical vapor deposition. In order to reduce the surface energy, nanorods or nanowires were preferentially nucleated on the tips of the pyramids and grown along the c-axis of wurzite structure. In this work, the growth mechanism and optical properties of the high quality zero- and one- dimensional ZnO nanostructures are measured and discussed.
The well-adopted method of RF magnetron sputter or along with chemical vapor deposition to fabricate high quality Zn/ZnO nanodots and well-aligned Al-doped ZnO nanorods can be applied in nano-optoelectronic devices, and provides a simple and reliable process for industrial applications.
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Chang, ChiaWen, and 張嘉文. "Electrochromism in Infrared of R.F Magnetron Sputter Deposited Tungsten Oxide." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/16129854281264457815.
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碩士<br>逢甲大學<br>材料科學學系<br>89<br>Electrochromic tungsten oxide possessing very high coloring-efficiency makes it to be the most promising EC materials whose electrochromic behavior is highly dependent on its O2/Ar. In this study, a survey on the effect of oxygen concentration by manipulating oxygen to argon flow rate ratio in an rf magnetron sputter deposition to the microstructure of the deposited tungsten oxide film was carried to reveal their electrochromic properties in UV-VIS and IR range.
SEM, AFM, XRD and ESCA were used to identify the film surface, roughness, crystal structure, film composition and bonding state of the constituent element. Lithium ions were inserted in the films by using a 0.1M LiClO4/propylene carbonate (PC) anhydrous electrolyte to study the cyclic voltammetric behavior and the response time constant. Optical transmission of the as-deposited, colored and bleached film was analyzed by using UV-VIS and FTIR spectrometer.
Experimental results showed that the deposited films were amorphous regardless of the O2/Ar flow ratio. Surface roughness showed indepent on the O/W ratio. Even though saturated oxygen concentration, the deposited films showed extremely different in electrochromic behavior, which is apparently affected by the film chemical state. The maximum amount of Li+ insertion occurs to the films deposited at O2/Ar flow ratio around 0.43 and its transmittance varies between coloring and bleaching to its maximum value about 46%. From IR spectra, extra peak appear at 870cm-1 due to W+6-O bond at high O2/Ar flow ratio. When coloring, the inserted electrons reduce W+6 ions into W+5, thus W+6=O bonds disappear, on the other hands they appears again after bleaching.
This study can have a microscopically looking inside the coloring mechanism of an r.f. sputter deposited tungsten oxide, meanwhile provide the optimization of the process.
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Lee, Mong Ying, and 李孟螢. "Photocatalytic activity of bipolar pulsed magnetron sputter deposited TiO2 thin films." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/95138230501963154662.
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碩士<br>國立金門大學<br>電子工程學系碩士班<br>102<br>TiO2 films were deposited by bipolar pulse DC magnetron sputtering system.The effects of Ar -O2 ratios,on the films crystal structure, surface microstructure and phtotcatalytic properties of the TiO2 thin films have been investigated .The crystal structure composition of the films were characterized by grazing-incidence X-ray diffraction . The surface morphology of the films was characterized by flied emission scanning electron microscopy(SEM). The phorocatalytic properties of the films were analyzed by the de-colorization of Methylene blue with visible light sources. The results implied that was critical in the crystalline phase anatase in the TiO2 thin films exhibited excellent qualities in the photocatalytic properties. The results power 200W oxygen content of 75% with good catalytic performance and anatase crystalline A (101), A (110) and A (200).
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Tai, Cheng-Chi, and 戴成奇. "Characterization of R.F Magnetron Sputter Deposited Ni/Al2O3 Cermet Thin Films." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/95375150283348601970.
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碩士<br>逢甲大學<br>材料與製造工程所<br>92<br>Ni/Al2O3 cermet thin films have been fabricated by rf magnetron sputter deposition, and characterized under self-heating. A composite target, consist of small Ni sheets (1×1×0.1cm3) attached on Al2O3 plate (dia. 5cm) was used. The sputtering was carried out in Ar atmosphere. The Ni/Al2O3 cermet thin films with different Ni atomic percents were prepared on SiO2/Si substrates. By changing the number of nickel sheets, the Ni /Al2O3 mole ratios of the films can be controlled. Resistivity for the films with different Ni/Al2O3 mole ratios was measured within a period of temperature ( 25℃ to 125℃), and the temperature coefficient of resistivity (TCR) was calculated. It was found that the film properties changed from metal to insulator with the decrease of Ni percents. The surface morphology and microstructures of as-deposited and in-situ bias and vacuum annealed (700 K，2hr) thin films were observed by scanning electron microscope (SEM). The film crystallography was characterized by grazing angle X-ray diffraction (XRD). The feasibility of applying the the Ni/Al2O3 cermet films on flow sensors and mico-heating devices was discussed.
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Ko, Yi-jung, and 柯懿容. "Preparation of Photocatalytic Tantalum Oxide Films by RF Magnetron Sputter Deposition." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/22774430152656387749.
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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>96<br>Abstract
Tantalum oxide is a photocatalytic semiconductor. It can decompose the organic pollutants by under UV light irradiation.
In this research, we fabricated the Ta2O5 films by using radio frequency magnetron sputtering. The properties of the deposited films were controlled by various working power and working pressure while keeping at constant substrate temperature and sputter time.
The crystal structures and composition of the films were characterized by X-ray powder diffraction (XRD),glancing incident angle X-ray Diffraction (GIXRD), and X-ray photoelectron spectroscopy (XPS). The surface morphology and roughness were studied with a field-emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM).The microstructure of the films was observed by transmission electron microscope (TEM). The visible light photocatalytic activity was evaluated by the measurement of the decomposition of methylene blue under visible light irradiation. The hydrophilicity of the deposited films was analyzed by water contact angle and measurement the ability of Ag reduction to confirm photocatalytic ability.
The results showed that no matter changed working pressure or RF power for as-deposited films which had low photocatalytic ability, methylene blue conversion Efficiency was only 22% and water contact angle had not obviously dropped. But after 650oC annealing for four hours, the methylene blue conversion Efficiency improved and water contact angle dropped greatly, among them methylene blue conversion Efficiency can reach as high as 85%, water contact angle can drop to 10 degrees. From this experiment, the crystallization of Ta2O5 films, hydroxyl radical(．OH), and the rounghness of films surface were main influence of photocatalytic Efficiency. The experiment shows that the optimum condition is that the deposited at working pressure 12 m Torr and RF power 400 W films after annealing at 650oC for four hours, it has the best photocatalytic ability and photo-induced hydrophilicity.
Key words: Tatanlum oxide、photocatalytic ability、photo-induced hydrophilicity
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Li, Chih-Hung, and 李至弘. "The Study of Highly Defective ZnO/Mg0.4Zn0.6O SuperlatticeMade by RF Magnetron Sputter." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/42749575539850514052.
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碩士<br>臺灣大學<br>應用力學研究所<br>98<br>We studied ZnO, Mg0.4Zn0.6O, Mg0.2Zn0.8O thin films, as well as Mg0.4Zn0.6O/ZnO superlattice deposited on silicon wafer and quartz glass substrates at room temperature using radio frequency magnetron sputtering technique. The material properties were characterized by SIMS, SEM, TEM, transmission spectrum, XRD and PL.
From the results of SIMS measurement, the content of Mg0.4Zn0.6O thin film was close to that of the target. After annealing at 600 oC and 800 oC in N2, the cubic MgZnO precipitates in Mg0.4Zn0.6O films. The cubic precipitates were observed by the SEM; in addition, the XRD patterns also revealed the diffraction peaks of cubic MgZnO precipitates. The optical bandgap of as-deposited Mg0.4Zn0.6O, calculated from the transmission spectrum, was approximately 3.95 eV. When annealed at 800 oC, the optical bandgap approached to that of ZnO after long time annealing due to the decrease of the film thickness by evaporation. This evaporation of film thickness also caused the increase of transmittance. By contrast, this increase of transmittance after long time anneal did not occur at 600 oC. As for Mg0.2Zn0.8O films annealed at 800 oC, we also observed the decrease of film thickness, but the amount of thickness reduction was not as large as that of Mg0.4Zn0.6O films. The bandgap of Mg0.2Zn0.8O also approaches to that of ZnO after long time annealing.
We then studied [ZnO/Mg0.4Zn0.6O]2.5 superlattice of various thickness per layer. The transmission spectra of samples with thinner layer thickness reveal two absorption edges between the wavelengths of 200 nm and 500 nm, which are resulted from the partial absorption of ZnO and Mg0.4Zn0.6O layers. After long time annealing treatment at 800 oC, the absorption edge degenerated to one with an optical bandgap a little higher than ZnO, caused by the diffusion of Mg into ZnO layer and evaporation of the films. On the other hand, the transmission spectra remain almost the same when the superlattice is subjected to a heating process of 600 oC, indicating the evaporation and precipitation were suppressed. The PL peaks for superlattice shifted as the thickness of superlattice layer changed, indicating the quantum confinement effect. To improve the quality of superlattice structures, we adopted a 10 nm ZnO seeding layer by atomic layer deposition prior to the deposition of the superlattice structure by rf-sputtering. From the FWHM of PL peak, the seeding layer improved the quality of rf-sputtered superlattice structures.
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Wu, Che-Wei, and 吳哲維. "optical properties of the Zinc Oxide nanocolumn deposited by RF magnetron sputter." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/91718300132715831366.
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碩士<br>中原大學<br>電子工程研究所<br>100<br>In this paper, ZnO nanocolumns structure optical resonance cavity was deposited by RF magnetron sputtering system in four different concentrations of O2 . (20%,40%,60% and 80%) The crystal structure and optical properties of four conditions of ZnO thin films are presented and discussed.
First, the crystal structure of the ZnO thin films are definited by XRD and SEM measurement. The XRD spectra show that the four kinds of ZnO samples have (002) preferred orientation and there are no other ZnO crystal phase. The thickness and the cross-sectional view were measured by SEM. It is find that the ZnO thin films are nanocolumns structure. The thickness of the thin films are about 1.8 μm and the width size of each column is about 100nm to 150 nm. After the annealing process, the quality of ZnO thin film become better, the thickness change to 1.2 μm and the width size of each column increase to 200nm to 250nm.
Second, the reflectivity spectra were measured and the effective refractive indices could be calculated. The effective refractive index of sample grown on 60% O2 concentration condition is closest to the refractive index of ZnO bulk material and the refractive index of 60% sample is most high. As a good optical resonance cavity, high refractive index is very important. Thus the 60% sample is the best choice to make the optical resonance cavity.
Finally, the PL measurement had used to analyze the emission spectra of the 60% sample. Here the detector was put in different angles, 45°to the sample and up at the sample. A classic ZnO spectra were measured in these two kind angles and there are some oscillate peaks being observed at the long wavelength region and at the short wavelength region at 10k. Here the Febry-Perot Mode and the Whispering Gallery Mode were used to explain the oscillate peaks. In conclusion, the peaks at the long wavelength region could be proved as Febry-Perot Mode signals and the peaks at the short wavelength region could be proved as Whispering Gallery Mode signal or optical phonon signal.
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Cho, Yi-Cheng, and 卓逸誠. "Investigation of the Flexible Electrochromic Thin Film by Pulse Magnetron Sputter Process." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/03358956800307524066.
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碩士<br>明道大學<br>材料科學與工程學系碩士班<br>101<br>Electrochromic films were used popularly for building window, optical goods, conveyance and liquid crystal displays. These productions were used the glass substrate mostly. Glass substrate has most high transmittance, heat-resistant and chemical resistance. But its disadvantages are easily broken, heavy and not easy to bend. Therefore, it limits its applications. The flexible substrate can overcome the problem of the glass.
In this study, tungsten titanium oxide film was deposited on ITO /PET substrate by using pulse magnetron sputter deposition. The optimum parameter was obtained by changing the pulse power, working pressure.
The experimental results show that the amorphous structure by XRD analysis of tungsten titanium oxide film. From the SEM of the surface analysis, as pulsed power increase the grain size increase of tungsten titanium oxide film. XPS results showed that large number of W+4 ions are included in oxide tungsten titanium film so easy for cause the the film colored was not completely. From the W4f area observed as pulsed power increase can get high price tungsten ions let transmittance increase. In the optics analysis, the tungsten titanium oxide film in the pressure 10 mTorr pulsed power 250W the optimum parameter have transmittance variation in infrared light wave 64.83 %.
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Chung, Yi-Chine, and 陳怡蒨. "Thermionic Enhanced DC-magnetron Sputter Deposited Tungsten Oxide and Its Electrochromic Behavior." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/63012829465992359869.
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碩士<br>逢甲大學<br>材料科學所<br>94<br>Due to its non- toxicity, reversibility, high coloration efficiency and durability, tungsten oxide has been widely used as electrochromic material in form of thin films. In this study, tungsten oxide was deposited by thermionic enhanced reactive DC magnetron sputtering at different oxygen partial pressures. After solving service durability of the filament, a variety of plasma diagnostics are used to correlate discharge parameters with microstructure and electrochromic properties of the deposited films.
The experimental result shows that electroplated platinum gives the longest life against oxygen attack. W, Ar*, Ar+ and O2+ were found as the main species in the discharge, with four species concentration and ion density increased by using thermionic emission enhancement. The target current variation with oxygen partial ratio from 9 % increased to 14% when thermionic enhancement is employed.
With or without thermionic enhancement, all over the range of oxygen partial pressure, it exhibits a fine columnar nano-grain sized structure in the deposited films. Six-valenced tungsten were found in the deposited films, when oxygen partial ratio exceeds the critical target poisoning point. With thermionic enhancement, maximum transmittance variation is 62 % and optical density is 0.6, respectively were obtained at an oxygen partial ratio 32 %. The available oxygen partial pressure range for producing electrochromic film in terms of maximum transmittance variation and optical density is also found to be extended by using thermionic emission enhancement.
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LIN, YI-HAN, and 林易翰. "Electrochromic Properties of Metallic Oxide Film With Bipolar Pulsed Magnetron Sputter System." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/q7cx72.
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碩士<br>國立金門大學<br>電子工程學系碩士班<br>103<br>Recently, electrochromism receives worldwide attention as an emerging technology. In all of the electrochromic materials, tungsten oxide has a lot of advantages, such as chemical stability, reversibility, opacity, inexpensiveness, and nontoxicity. It has, however, the defects of color leftover and filterability of short-wavelength visible light. In all of the methods of making thin films, sputtering has the advantages of the control of grain growth, the steady crystallization phase and the great thin film homogeneity. In addition, with the application of magnetron, sputtering can increase the pulsed power as well as the deposition rate. In this research, it is adopted by using the bipolar pulsed magnetron sputtering system to make tungsten oxide thin films. Therefore, being fixed the thickness of the thin films within 300 nm so as to explore how mixtures of different oxygen varing by gas flow rates, the pulsed power, and the third element, molybdenum, affect the crystal structure, the nanocrystalline structure, the cyclic voltammetry curve, the optical property. It was used XRD, SEM, UV-Visible, and electrochemistry cyclic voltammetry to measure and analyze the Tungsten oxide thin films. The result shows that all tungsten oxide thin films produced the monoclinic nanocrystalline structure in the oxygen gas flow rate of 5 sccm, which, increased the pulsed power, did not effect the crystal structure. Under the SEM the cluster size decreased as the oxygen gas flow rate increased. The cluster size increased as the pulsed power increased, all of the thin films formed a column structure. When penetrated the spectra, It was found that with the increase of power, the decoloring of the thin films could not restore to the primitive condition of deposition---proving that the thickness of the thin films have effect on the optical property of the thin films. Thus, as fixed the thickness of the films within 300 nm, it was discovered that the penetration of the thin films and the possibility of restoring decoloring condition to the original state. Therefore, it was found out when the pulsed power was 200 W and the oxygen gas flow rate was 15 sccm, it is the best parameter of tungsten oxide thin films. As the third element, molybdenum, was added the films to become tungsten-molybdenum oxide thin films, the XRD proved that molybdenum was in the form of solid solution in tungsten oxide thin films. Under the SEM, as the pulsed power of the molybdenum target increased, the cluster size raised relatively, and the column structure became prominent. The penetration spectra showed that when the molybdenum target pulsed power and the short wavelength increased and find out the molybdenum target pulsed power was 150 W, under the 400nm wavelength △T = 40.8％ (the number was 36.6％ ) △OD = 0.417 ( if it do not add the Tungsten Oxide, the number will be 0.328 ) the Coloration Efficiency is 4.699 cm2/C (if Tungsten Oxide was not added to it, the number was 3.913 cm2/C ), it was the best filtering short-wavelength tungsten- molybdenum oxide thin films.
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Zhang, Hong-Bin, and 張宏濱. "High-Reflectance Multilayer Mirrors for Extreme Ultraviolet Lithography Using Magnetron Sputter-deposition." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/63901264893913926240.
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碩士<br>明新科技大學<br>電子工程系碩士班<br>103<br>In this study, we designed and simulated EUV multilayer mirrors for high reflectance. We fabricated the multilayer mirrors and a capping layer on the top of the multilayer mirrors. The commercial Essential Macleod software was used for our designs and simulations. A Mo/Si multilayer was fabricated by the magnetic sputter system with low and room temperature at Instrument Technology Research Center (ITRC), and their reflectance was measured by the Mega reflector at National Synchrotron Radiation Center (NSRRC). Base on simulations, the reflectance of our designed multilayer mirror was 73% at the incident angle was 20∘. The reflectance of our fabricated sample at the incident angle of 20∘was 50% with 40 stacks of films at the deposition temperature of room temperature and was 47% at the deposition temperature of low temperature. Finally, we applied AFM, TEM, SEM, and XPS equipments to analyze roughness, structure, and atomic composition of the multilayer mirrors.
The AFM measurements showed the uniform morphology with a very low surface roughness value under 0.15 nm with 50V dc-bias assisting. It was found that the Mo-on-Si, Si-on-Mo, and Ru/Si interface layers were discriminated by HRTEM, and XPS. The Mo-on-Si interface layer was 0.45 nm. However, the Si-on-Mo interface layer was increased with thickness increased from 0.9 nm to 1.35 nm. The cause of Mo/Si and Ru/Si interfaces form was attributed to the substrate temperature was increased during sputtering.
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Hsu, Wei-Cheng, and 徐瑋成. "Study of Barium Strontium Titanate Dielectric Thin Films by RF Magnetron Sputter." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/97411486479262370205.
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碩士<br>龍華科技大學<br>電子工程系碩士班<br>102<br>BST thin films were deposited using Ba0.6Sr0.4TiO3 ceramic target by RF magnetron sputter. The effects of both deposition temperature and annealing temperature on BST dielectric property have been evaluated. BST films were deposited at 200, 250 and 300 ℃ and annealed at 600, 650, 700 and 750 ℃ for 120 minutes. The results show that the BST film deposited at 300 ℃ and subsequently annealed at 650 ℃ exhibits the largest dielectric constant, which is 344, 286, and 113 at 1K, 10K, and 100KHz, respectively. Moreover, leakage current will decrease as annealing temperature increasing. With 750 ℃ annealing, the leakage current of BST films deposited at 200 ℃, 250 ℃, and 300 ℃ is 1.79, 5.68 and 13.62 μA/cm2, respectively.
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LIU, YEN-CHUN, and 劉彥淳. "High Power Impulse Magnetron Sputter Deposited Chromium-Based Coatings for Corrosion Protection." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/vbtmm7.
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碩士<br>逢甲大學<br>材料科學與工程學系<br>107<br>High power impulse magnetron sputtering (HIPIMS) is a relatively recent advance in sputtering technology used for the physical vapor deposition of thin film coatings, which enable to deposit high adhesion, high quality and dense films due to its high level of ionization degree, high plasma density and high ion energy. This study employs HIPIMS to deposit Cr-N coatings on copper alloy substrates to improve the corrosion resistance. The changes of peak voltage, peak current and peak power of chromium target were observed by controlled HIPIMS process parameters such as pulse frequency and pulse width for optimizition. Several kinds of Cr-N single layer and multilayer structure were designed to deposit on copper alloy (brass), and the corrosion resistance was tested by DC polarization and salt spray test through copper accelerated acetic acid salt solution (CASS).
Experimental results show that, first of all, the peak current of HIPIMS process parameters under the pulse frequency of 800 Hz, the pulse width of 75 µs and the output power of 6 kW can reach up to 192 A and no intermittent arcs generated. Second, from the results of single layer study, HIPIMS coating had better film quality and electrochemical corrosion resistance than DCMS. The Ecorr and Icorr value of the brass substrate were -193 mV and 28.294 mA/cm2, while that of the HIPIMS-CrN single layer deposited brass were -109 mV and 0.602 mA/cm2, respectively. Thrid, from the results of multilayer study, it was found to improve corrosion protection further, due to the interuption of film defects by the underlying films that effectively stop corrosion medium toward substrate. In this regard, HM1 multilayer-structured sample has the highest Ecorr of 246 mV, and HM2 sample, with alternating gradient nitrogen composition, has the lowest Icorr of 0.122 mA/cm2. Notably, the known effect of high bias voltage applied for growing Cr seed layer can bring densified film microstructure and strong film adhesion for the on-growing layers. Here in our case, when implemented on brass substrate, shall be reduced its substrate bias voltage (and thus substrate heating) for avoiding dezincification of the brass, which would otherwise significant decrease in corrosion resistance. Finally, in terms of the CASS test, the HIPIMS and DCMS single layer coated sample showed lots of corrosion pins on the surface after 4-hour CASS testing. On the other hand, the multilayer-structured samples servived after 8-hour CASS test.
In summary, the multilayer-structured HIPIMS Cr-N coatings developed in this study present good thin film quality and corrosion resistance, which can be considered as an alternative to electroplating industry.
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Hsueh, Shun-Jen, and 薛舜仁. "The Study of Solar Selective Multilayer Absorber Prepared by Reactive Magnetron Sputter." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/33spv9.
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碩士<br>國立虎尾科技大學<br>材料科學與綠色能源工程研究所<br>100<br>The solar selective multilayer absorber has been used extensively in flat plate solar collector due to its excellent photothermal conversion. Compared with traditional methods, such as electrodeposition and spray, the sputtering can reduce the environmental pollution. The solar selective multilayer absorbers were prepared by reactive magnetron sputtering to study the effects of sputtering power and oxygen flux on the surface morphology, structure, and optical properties of aluminum oxide and nickel oxide films. The influences of the thickness of oxide film, the composition of oxide film, the oxygen flux and the sputtering power on the absorptance (α) and thermal emitance (ε) of multilayer absorber, and the thermal stability of multilayer absorber were investigated in this study.
According to the experimental resulted, the structure were changed from sheet to small grain due to the oxygen flux increased, which lead to oxygen composition increased and sputtering rate reduced of AlxOy and NixOy film. On the other hand, when sputtering power increased, the grain size were growth up and the sputtering rate were also increased, oxygen composition were reduce. From XRD and TEM result that the thin film of AlxOy was amorphous structure and NixOy was polycrystalline. In the multilayer absorber, as the thickness of top and bottom layer were reduce, the α were increased and ε were reduce. The absorber range of the AlxOy thin film was wider than NixOy thin film in bottom layer. So the best component of solar selective multilayer absorber SS/AlxOy(150W、8O2、60nm)/Ni/ AlxOy(150W、8O2、60nm) were optimized to achieve high solar absorptance(=0.94) and low thermal emittance(=0.05). In addition, the component of SS/AlxOy(150W、8O2、60nm)/Ni/ AlxOy(150W、8O2、60nm) has excellent thermal stability.
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TSAI, YAO-SHENG, and 蔡耀陞. "Thermoelectric Properties of Ag25Sb25Se5Te45 Thin Films Deposited by RF Magnetron Sputter Method." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/59750900746268586293.
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碩士<br>南臺科技大學<br>電子工程系<br>104<br>Due to rapid economic and industrial development, high usage of non-renewable resources (petroleum, coal, natural gas…etc.) deplete those limited resources on Earth, and the resource used in this research is thermoelectric material, which is a kind of renewable resources. Thermoelectric material is a type of material which can help electrical and thermal energy transform with each other. Apart from being renewable resource material and used in thermoelectric generation, it can also be used to make cooling wafer. In recent years, as semiconductor industry grows rapidly, to increase efficiency, the size of output processing becomes smaller and smaller. This leads to the increasing importance of radiating of materials, so the study of usage of thermoelectric thin films material also develop vigorously.
The antimony-telluride Ag25Sb25Se5Te45 thermoelectric thin films were deposited on SiO2/Si substrates by using the sputtering method. The effects of deposition power on the microstructures and thermoelectric properties of the Ag25Sb25Se5Te45 thin films were investigated. The crystal structure and surface morphology of the Ag25Sb25Se5Te45 thin films were characterized by X-ray diffraction analysis and field emission scanning electron microscope. We found that the Ag25Sb25Se5Te45 thin films showed the amorphous structure.