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1

Landi, Gabriel Teixeira. "Desenvolvimento de um gerador de nanopartículas e caracterização de nanopartículas de cobalto." Universidade de São Paulo, 2009. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-12052009-092829/.

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Neste trabalho, desenvolvemos um gerador de nanopartículas (NPs) como uma adaptação para um sistema de magnetron sputtering. Com ele, somos capazes de produzir NPs de materiais diversos e codepositá-las em matrizes dielétricas ou metálicas. A adaptação consiste em incluir uma região de alta pressão relativa de Ar no caminho do vapor atômico removido do alvo. A aglomeração ocorre termodinamicamente devido a diminuição da energia cinética após colisões com o gás. Desenvolvemos também, uma metodologia para colimar o fluxo de NPs dentro da região de alta pressão. A deposição é feita no substrato n
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2

Deoli, Naresh T. "Sputtering of Bi and Preferential Sputtering of an Inhomogeneous Alloy." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc700021/.

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Angular distributions and total yields of atoms sputtered from bismuth targets by normally incident 10 keV -50 keV Ne+ and Ar+ ions have been measured both experimentally and by computer simulation. Polycrystalline Bi targets were used for experimental measurements. The sputtered atoms were collected on high purity aluminum foils under ultra-high vacuum conditions, and were subsequently analyzed using Rutherford backscattering spectroscopy. The Monte-Carlo based SRIM code was employed to simulate angular distributions of sputtered Bi atoms and total sputtering yields of Bi to compare with expe
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3

Marriott, Timothy. "Magnetron sputtering of bioceramics." Thesis, University of Nottingham, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.539210.

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4

Brookes, Marc. "Novel components by magnetron sputtering." Thesis, University of Salford, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491045.

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The advent of the closed field unbalanced magnetron sputtering (CFUBMS) technique has provided a novel method for the production of ultra thick multilayer coatings, which form free standing foils when removed from the substrate. Applications for this method range from the production of complex metal/ceramic probe tips, to an alternative route for the production of axisymmetric high precision-machined components, such as a bellows component used in the production of uranium enrichment by the sponsors of this project, Urenco (Capenhurst) Ltd. In this study the CFUBMS system was developed to grow
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5

Spencer, Alaric Graham. "High rate reactive magnetron sputtering." Thesis, Loughborough University, 1988. https://dspace.lboro.ac.uk/2134/10464.

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Glow discharge sputtering has been used for many years to produce thin films but its commercial applications are severely limited by low deposit ion rates. The DC planar magnetron, developed a decade ago, allows much higher deposition rates and its commercial use has expanded rapidly. Non-reactive magnetron sputtering of metallic thin films is well understood and utilized. However when a reactive gas is introduced the process becomes harder to control and can switch between two stable modes. Often films are produced simply by using one of these stable modes even though this does not lead to op
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6

Yeadon, Andrew D. "Developing a remote plasma sputtering process for the in-line reactive sputtering of ceramic thin films." Thesis, University of Surrey, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599918.

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High target utilisation sputtering (HiTUS) is a patented remote plasma sputtering technique for the deposition of thin films. A prototype in-line sputter deposition facility, based on the existing standard HiTUS technology, has been developed. Materials deposited by both the standard HiTUS and the prototype in-line system where characterised. This was important in examining the key deliverable of the new system which is uniform deposition of high quality coatings on large (20 cm by 30 cm) substrates. Initially characterisation of the in-line system showed that fully reacted transparent alumina
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7

Lama, F. "Sputtering processes in UO2̲ and UF4̲." Thesis, University of Sussex, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375154.

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8

Eleuterio, Filho Sebastião. "Magnetron Sputtering planar construção e aplicação." [s.n.], 1991. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277105.

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Orientador: Sergio Artur Bianchini Bilac<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin<br>Made available in DSpace on 2018-07-14T00:34:53Z (GMT). No. of bitstreams: 1 EleuterioFilho_Sebastiao_M.pdf: 3937274 bytes, checksum: 3a5a8e1cc4df74ca5071ce507ea876fa (MD5) Previous issue date: 1991<br>Resumo: A técnica de deposição de filmes magnetron sputtering apresenta muitas vantagens em relação à outros métodos, como por exemplo, a simplicidade do equipamento, o baixo custo de manutenção, fácil manuseio e, a possibilidade de obtenção de altas taxa
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9

Samartsev, Andrey V. "Sputtering of Indium under polyatomic ion bombardment." [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=976510278.

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10

Huo, Chunqing. "Modeling High Power Impulse Magnetron Sputtering Discharges." Licentiate thesis, KTH, Rymd- och plasmafysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-94002.

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HiPIMS, high power impulse magnetron sputtering, is a promising technology that has attracted a lot of attention ever since its appearance. A time-dependent plasma discharge model has been developed for the ionization region in HiPIMS discharges. As a flexible modeling tool, it can be used to explore the temporal variations of the ionized fractions of the working gas and the sputtered vapor, the electron density and temperature, and the gas rarefaction and refill processes. The model development has proceeded in steps. A basic version IRM I is fitted to the experimental data from a HiPIMS disc
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11

Yahia, Maymon. "Development of an enhanced magnetron sputtering system." Thesis, University of Salford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490427.

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The magnetron sputtering process has become established as the process of choice for the deposition of a wide range of industrially important coatings. However, despite its successes, there are inherent limitations in the current process. The ion-to-atom ratio incident at the substrate, which has a profound effect on coating properties, cannot readily be varied using present technology. Consequently, film properties may not be optimal. The relation between the incident charge and the energy delivered to the surface is another parameter that cannot be controlled in classical magnetron sputterin
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12

Burbidge, Douglas S. "Sputtering and characterizations of titanium oxide films." Thesis, University of British Columbia, 1985. http://hdl.handle.net/2429/25850.

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Reactive magnetron sputtering of titanium oxides has been investigated with emphasis on the technique of using a reactive gas baffle to enhance film oxidation. This method consists of placing a partial barrier between the sputtering target and the substrate. For the first time the dependence of the effectiveness of this technique on the material being sputtered has been considered and the effects of various baffles were compared for the same material (TiO[sub x] ,0≤x≤2). Decreasing the transparency of the baffle to sputtered flux resulted in an increase in the maximum attainable oxygen partial
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13

Böhlmark, Johan. "Fundamentals of high power impulse magnetron sputtering /." Linköping : Linköping University, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7359.

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14

Böhlmark, Johan. "Fundamentals of High Power Impulse Magnetron Sputtering." Doctoral thesis, Linköpings universitet, Plasma och beläggningsfysik, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7359.

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In plasma assisted thin film growth, control over the energy and direction of the incoming species is desired. If the growth species are ionized this can be achieved by the use of a substrate bias or a magnetic field. Ions may be accelerated by an applied potential, whereas neutral particles may not. Thin films grown by ionized physical vapor deposition (I-PVD) have lately shown promising results regarding film structure and adhesion. High power impulse magnetron sputtering (HIPIMS) is a relatively newly developed technique, which relies on the creation of a dense plasma in front of the sputte
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15

Hales, P. W. "Resistive and superconducting magnets for magnetron sputtering." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442462.

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16

Niu, Feng. "Functional nanocomposite thin-films by co-sputtering." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390504.

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17

Kaminski, Piotr M. "Remote plasma sputtering for silicon solar cells." Thesis, Loughborough University, 2013. https://dspace.lboro.ac.uk/2134/13058.

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The global energy market is continuously changing due to changes in demand and fuel availability. Amongst the technologies considered as capable of fulfilling these future energy requirements, Photovoltaics (PV) are one of the most promising. Currently the majority of the PV market is fulfilled by crystalline Silicon (c-Si) solar cell technology, the so called 1st generation PV. Although c-Si technology is well established there is still a lot to be done to fully exploit its potential. The cost of the devices, and their efficiencies, must be improved to allow PV to become the energy source of
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18

Bagmut, A. G., and I. A. Bagmut. "Crystallization of Films, Deposited with Laser Sputtering." Thesis, Bar-Ilan University, 2015. http://repository.kpi.kharkov.ua/handle/KhPI-Press/30801.

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19

Abid, Al Shaybany Sari. "Sputtering of High Quality Layered MoS2 films." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-427144.

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We have deposited bulk, monolayer and few-layers as well as large-scale 2D layered MoS2 thin films by pulsed DC magnetron sputtering from an MoS2 target. MoS2 has gained great attention lately, together with other layered Transition Metal Dichalcogenides (TMDCs), for its unique optical and electrical properties with thickness-dependent bandgap. MoS2 also transitions from an indirect to a direct bandgap when thinned down to monolayer. This is intriguing in the fabrication of novel solar cells and photodetectors. Sputter-deposition has the advantage of producing large-scale, high-quality films,
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20

Strandberg, Erik. "Simulation of how pressure influences the reactive sputtering process." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-256617.

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Sputtering is a physical vapor deposition (PVD) process used to create thin films, i.e very thin layers of material. To form compounds, such as oxides and nitrides, it may be beneficial to add a reactive gas to the process which is known as reactive sputtering. This thesis focuses on the simulation of the reactive sputtering process and, more specifically, the effect of the process pressure. Two models have been developed. A Monte Carlo model simulates the distribution of sputtered material throughout the chamber. It is based on the binary collision model with initial conditions acquired from
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21

Oliveira, Gilderlon Fernandes. "Caracterização magnética de filmes finos e micro objetos baseados em metais de transição e terras raras." Universidade de São Paulo, 2014. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-02042015-143732/.

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O uso de magnetismo em sensores, transdutores e, principalmente, em mídias de gravação magnética, atinge uma escala de investimento no mercado global de bilhões de dólares anualmente. Essas aplicações tecnologicas, atualmente, apontam para usos do magnetismo na escala nanoscópica, por meio da miniaturização de dispositivos magnéticos sensores e transdutores; em gravação magnética através da nanoestruturação das unidades básicas de armazenamento; ou, ainda, na medicina pelo uso de nanopartículas magnéticas como carregadores de drogas medicinais ou como elementos aquecedores por meio da radiação
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22

Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A23651.

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Objective of the present work is a broad investigation of the so called &amp;quot;target poisoning&amp;quot; during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 M
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23

Wei, Yu. "Ion bombardment induced compositional changes in compound semiconductor surfaces by XPS combined with LEISS." Thesis, Aston University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.282997.

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24

Raza, Mohsin. "Synthesis of hydrogenated amorphous carbon (a-C:H) thin films by HiPIMS-based processes." Thesis, Linköpings universitet, Plasma och beläggningsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-84320.

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This thesis explores the feasibility of high power impulse magnetron sputtering (HiPIMS) to synthesize hydrogenated amorphous carbon (a-C:H) thin films in Ar-hydrocarbon ambient and the relationship between process parameters, gas phase composition and film properties. To this purpose a stable process based on HiPIMS and direct current magnetron sputtering (DCMS) has been developed. Four series of amorphous carbon thin films were deposited by hybrid HiPIMS-DCMS and pure DCMS processes at 15 mTorr pressure using different Ar-acetylene compositions and a substrate bias from 0 to -350 V. The effe
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25

Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1240493527858-26662.

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Objective of the present work is a broad investigation of the so called &amp;quot;target poisoning&amp;quot; during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 M
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26

Sveinsson, Ólafur Björgvin. "Measurement setup for High Power Impulse Magnetron Sputtering." Thesis, Uppsala universitet, Signaler och System, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-162988.

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Recently material physics group at Science Institute of University of Iceland has been using reactive sputtering to grow thin films used in various research projects at the institute. These films have been grown using dc sputtering which has been proven a very successful method. High power impulse magnetron sputtering or HiPIMS is an new pulsed power sputtering method where shorter but high power pulses are used to sputter over lower steady power. The project resulted in a functional system capable of growing thin films using HiPIMS. Thin films grown with high power pulses have a higher film d
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27

Lundin, Daniel. "Plasma properties in high power impulse magnetron sputtering." Licentiate thesis, Linköping : Department of Physics, Chemistry, and Biology, Linköping University, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11621.

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28

Shih, Jeanne-Louise. "Zinc oxide-silicon heterojunction solar cells by sputtering." Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=112583.

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Heterojunctions of n-ZnO/p-Si solar cells were fabricated by RF sputtering ZnO:Al onto boron-doped (100) silicon (Si) substrates. Zinc Oxide (ZnO) films were also deposited onto soda lime glass for electrical measurements. Sheet resistance measurements were performed with a four-point-probe on the glass samples. Values for samples evacuated for 14 hours prior to deposition increased from 7.9 to 10.17 and 11.5 O/&squ; for 40 W, 120 and 160 W in RF power respectively. In contrast, those evacuated for 2 hours started with a higher value of 22.5 O/&squ;, and decreased down to 7.6 and 5.8 O/&squ;.
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29

Särhammar, Erik. "Sputtering and Characterization of Complex Multi-element Coatings." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-229207.

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The thin film technology is of great importance in modern society and is a key technology in wide spread applications from electronics and solar cells to hard protective coatings on cutting tools and diffusion barriers in food packaging. This thesis deals with various aspects of thin film processing and the aim of the work is twofold; firstly, to obtain a fundamental understanding of the sputter deposition and the reactive sputter deposition processes, and secondly, to evaluate sputter deposition of specific material systems with low friction properties and to improve their performance.From st
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30

Petty, Thomas. "Tungsten nanostructure formation in a magnetron sputtering device." Thesis, University of Liverpool, 2015. http://livrepository.liverpool.ac.uk/2036140/.

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Fuzzy tungsten is a phenomena that could potentially occur in future fusion reactors. There are three conditions for fuzz to form, the existence of He ions impinging on a tungsten sample for a sufficient amount of time, that these ions be of sufficient energy, and that the surface temperature of the tungsten is hot enough. These conditions will likely be fulfilled in ITER, the future flagship fusion reactor. Therefore efforts to understand and characterise the fuzz formation are of importance. A thorough literature review has been provided, bringing together for the first time works from over
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31

Strauß, Florian, Janek Binzen, Erwin Hüger, Paul Heitjans, and Harald Schmidt. "Thin LixSi Films Produced by Ion Beam Sputtering." Diffusion fundamentals 21 (2014) 11, S.1, 2014. https://ul.qucosa.de/id/qucosa%3A32405.

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32

Janacek, Tomas Carleton University Dissertation Engineering Electronics. "A study of collimated sputtering for VLSI metallization." Ottawa, 1993.

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33

Brownstein, Barry Scott 1960. "Characterization of an ultrahigh vacuum (UHV) sputtering system." Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277865.

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Contamination from the gas source, target, or system can cause impurities to become incorporated in a sputtered film. These impurities can harm the sputtered film e.g., in terms of electromigration and microstructure properties. A custom-designed ultra-high vacuum sputtering system was constructed to study trace levels of background contaminants allowed by different pump combinations. Turbomolecular and cryogenic pumps each selectively aided by a LN2 trap and a titanium sublimation pump were used. Contamination was measured with RGAs at base pressures and at 1 mT. The main contaminants for the
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34

Lima, Valquiria Fernanda Gonçalves de. "Preparação e caracterização de nanopartículas magnéticas de Sm-Co, Nd-Fe-B, Fe-Pt e Co-Pt pelo método de agregação gasosa." Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-26112014-135553/.

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Atualmente, nanopartículas (NPs) são utilizadas em todos os ramos da tecnologia. Suas promissoras aplicações envolvem entre outros, o campo dos sensores e transdutores, mídia de gravação magnética, carreadores magnéticos de drogas medicinais. Com o objetivo de produzir NPs pelo método físico, um gerador de nanopartículas foi adaptado usando um dos canhões do sistema de magnetron sputtering, baseando-se no método de agregação gasosa. Com o gerador somos capazes de produzir NPs de diversos materiais e codepositá-las em matrizes dielétricas ou metálicas. Neste trabalho apresentamos o desenvolvime
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Bigelow, Alan W. "Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target." Thesis, University of North Texas, 2000. https://digital.library.unt.edu/ark:/67531/metadc2657/.

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Energy distribution measurements of sputtered neutral particles contribute to the general knowledge of sputtering, a common technique for surface analysis. In this work emphasis was placed on the measurement of energy distribution of sputtered neutral atoms from different depths. The liquid Ga-In eutectic alloy as a sample target for this study was ideal due to an extreme concentration ratio gradient between the top two monolayers. In pursuing this study, the method of sputter-initiated resonance ionization spectroscopy (SIRIS) was utilized. SIRIS employs a pulsed ion beam to initiate sputteri
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Ja'fer, Hussein Abidjwad. "Plasma-assisted deposition using an unbalanced magnetron." Thesis, Loughborough University, 1993. https://dspace.lboro.ac.uk/2134/27734.

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It is well known that ion bombardment of growing films can strongly influence their microstructure and consequently their physical properties. The available technology for ion assisted deposition, particularly where separate sources are used for the deposition flux and the ion flux, is difficult to implement in many production situations. The planar magnetron provides a controllable ion flux while retaining the many other desirable features of simplicity, high deposition rate, geometric versatility and tolerance of reactive gases. This assists in the implementation of ion beam assisted deposit
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Pratontep, Sirapat. "Production and characterisation of size-selected nanoclusters on surfaces." Thesis, University of Birmingham, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.289304.

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Nakles, Michael Robert. "Experimental and Modeling Studies of Low-Energy Ion Sputtering for Ion Thrusters." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/10040.

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This thesis investigates low-energy xenon-molybdenum (Xe+-Mo) sputtering yields for ion energies of 100 eV and less. Sputtering yield data at these energies are important for ion thruster design and lifetime prediction. The basic principles of sputtering phenomena are discussed. An overview of various popular types of experimental sputtering yield methods is presented with an emphasis on the techniques that have been used to find Xe+-Mo sputtering yields in the past. Sputtering yields in this study are found through both models and experiments. Sputtering yields are calculated using the Sigmu
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Forsén, Rikard. "Dynamic pressure measurements in high power impulse magnetron sputtering." Thesis, Linköping University, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-52551.

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<p>A microphone has been used to measure the dynamic pressure inside a vacuum chamber during high power impulse magnetron sputtering with high enough time-resolution (~µs) to track the pressure change during the discharge pulse. An experimental measurement of the dynamic pressure is of interest since it would give information about gas depletion, which is believed to dramatically alter the plasma discharge characteristics. This investigation has shown that the magnitude of the pressure wave, which arises due to the gas depletion, corresponds to a 0.4 - 0.7Pa (3 - 5.5mTorr) pressure difference
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40

Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-27841.

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Objective of the present work is a broad investigation of the so called target poisoning during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 MV tandem accelerator
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41

Bischoff, Lothar, and Jochen Teichert. "Focused Ion Beam Sputtering of Silicon and Related Materials." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-30797.

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The impressive development of focused ion beam (FIB) systems from the laboratory level to high performance industrial machines during the last twenty years is briefly reported. The design and the functional principle of a liquid metal ion source as well as a FIB column are described. Main application fields of the FIB technology are stoichiometric writing implantation or ion milling which are dominated by the sputtering effect. The FIB is a very suitable tool for sputtering of well defined holes which can easily be analysed by surface profiling. By applying this volume loss method the sputter
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Rasch, Joel. "Probe measurements in a pulsed high power sputtering magnetron." Thesis, KTH, Rymd- och plasmafysik, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-91546.

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43

Santos, Claudiosir Roque dos. "Deposição de nano-camadas de VO2 por Magnetron Sputtering." Universidade Federal de Santa Maria, 2007. http://repositorio.ufsm.br/handle/1/9264.

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The vanadium dioxide (VO2) shows a metal-insulator transition (MIT) near the room temperature with huge changes in its electrical and optical behavior. Both the electrical and optic properties, and even the transition temperature, depend on the morphologic characteristics of the metal. In this work, vanadium oxide nanolayers were deposited onto glass substrate by reactive magnetron sputtering. The aim was to obtain the best deposition parameters, like substrate temperature (Ts) and oxygen partial pressure (PO2), for the VO2M1 phase synthesis. Samples deposited with oxygen partial pressures ran
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Flynn, Christopher Richard ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Sputtering for silicon photovoltaics: from nanocrystals to surface passivation." Awarded by:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2009. http://handle.unsw.edu.au/1959.4/44686.

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Deposition of thin material films by sputtering is an increasingly common process in the field of silicon (Si)-based photovoltaics. One of the recently developed sputter-deposited materials applicable to Si photovoltaics comprises Si nanocrystals (NCs) embedded in a Si-based dielectric. The particular case of Si nanocrystals in a Silicon Dioxide (SiO2) matrix was studied by fabricating metal-insulator-semiconductor (MIS) devices, in which the insulating layer consists of a single layer of Si NCs in SiO2 deposited by sputtering (Si:NC-MIS devices). These test structures were subjected to impeda
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45

Trinh, David Huy. "Nanocrystalline Alumina-Zirconia Thin Films Grown by Magnetron Sputtering." Doctoral thesis, Linköping : Department of Physics, Chemistry and Biology, Linköpings universitet, 2008. http://www.bibl.liu.se/liupubl/disp/disp2008/tek1153s.pdf.

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46

Aiempanakit, Montri. "Reactive High Power Impulse Magnetron Sputtering of Metal Oxides." Doctoral thesis, Linköpings universitet, Plasma och beläggningsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91259.

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The work presented in this thesis deals with reactive magnetron sputtering processes of metal oxides with a prime focus on high power impulse magnetron sputtering (HiPIMS). The aim of the research is to contribute towards understanding of the fundamental mechanisms governing a reactive HiPIMS process and to investigate their implications on the film growth. The stabilization of the HiPIMS process at the transition zone between the metal and compound modes of Al-O and Ce-O was investigated for realizing the film deposition with improved properties and higher depositionrate and the results are c
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Silva, Maria de Fatima Oliveira Vales de. "Multilayer TiB←2/X hard coatings by sputtering deposition." Thesis, Cranfield University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.284875.

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Weathers, Duncan Lee. "Sputtering by multiply-charged ions, and preferential sputtering of isotopic mixtures." Thesis, 1989. https://thesis.library.caltech.edu/8004/1/Weather_1989.pdf.

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<p>Collector-type experiments have been conducted to investigate two different aspects of sputtering induced by keV ions. The first study looked for possible ejection mechanisms related to the primary charge state of the projectile. Targets of CsI and LiNbO_3 were bombarded with 48 keV Ar^(q+), and a Au target was bombarded with 60 keV Ar^(q+), for q = 4, 8, and 11. The collectors were analyzed using heavy-ion Rutherford backscattering spectroscopy to determine the differential angular sputtering yields; these and the corresponding total yields were examined for variations as a function o
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Spicklemire, Stephen James. "Isotopic fractionation in sputtering." Thesis, 1990. https://thesis.library.caltech.edu/8612/2/Spicklemire_sj_1990.pdf.

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Isotopic fractionation due to sputtering has been investigated via a collector type experiment in which targets of known isotopic composition have been bombarded with several keV Ar<sup>+</sup> and Xe<sup>+</sup> ions with fluences down to 3.0x10<sup>14</sup> ions/cm<sup>2</sup> , believed to be the lowest fluences for which such detailed measurements have ever been made. The isotopes were sputtered onto carbon collectors and analyzed with Secondary Ion Mass Spectroscopy (SIMS.) There is clear indication of preferential effects several times that predicted by the dominant analytical theo
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LU, CHI-YU, and 呂季諭. "Properties of TiCrBN Thin Films Grown by a Hybrid Superimposed High Power Impulse Magnetron Sputtering, Radio Frequency Sputtering and DCMS Sputtering Technique." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/43716892671955626157.

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