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1

Kozlova, M. V., V. N. Fateev, O. K. Alekseeva, N. A. Ivanova, V. V. Tishkin, and A. Sh Aliyev. "MAGNETRON SPUTTERING SYNTHESIS OF ELECTROCATALYSTS." Chemical Problems 22, no. 1 (2024): 7–19. http://dx.doi.org/10.32737/2221-8688-2024-1-7-19.

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Magnetron sputtering is a well-known method of obtaining various coatings and surface modifications, but nowadays it is successfully used for the synthesis of electrocatalysts. One of the main advantages of the method is the possibility to vary the parameters during the process, such as the mode (direct current sputtering, pulsed medium-frequency sputtering, high radio frequency sputtering), potential supply to the sputtered substrate or catalyst carrier, pressure in the vacuum chamber, atmosphere composition, which allows to change the composition and structure of the obtained coatings and ca
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2

Zhang, Jin Min, Quan Xie, Vesna Borjanović, et al. "Preparation of the Kondo Insulators FeSi by Magnetron Sputtering." Materials Science Forum 663-665 (November 2010): 1129–32. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.1129.

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The Kondo insulator FeSi was prepared by DC magnetron sputtering and the effects of sputtering parameters on the formation of FeSi were investigated in detail. The formation of monosilicide FeSi was clarified using X-ray diffraction (XRD) and its microstructure was characterized by scanning electron microscopy (SEM). The results indicate that the sputtering gas pressure, the sputtering power and the Ar flux all have significantly effects on formation of FeSi and the crystalline of the film. The sputtering gas pressure has effects on sputtering yields, depositing rate and the energy of sputteri
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3

Ji, Xiao Lin, Hai Dong Ju, Tao Yu Zou, et al. "Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering." Advanced Materials Research 1105 (May 2015): 74–77. http://dx.doi.org/10.4028/www.scientific.net/amr.1105.74.

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Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputter
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4

Manukhi V.V. "Sputtering of carbide films from the surface of the metal by helium ions bombardment." Technical Physics 67, no. 11 (2022): 1500. http://dx.doi.org/10.21883/tp.2022.11.55182.48-22.

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The paper investigates the dependence of the sputtering yields by light ions bombardment of the surface layers of titanium and tungsten, modified with carbon, on the thickness of the layer. The theoretical study was conducted on the basis of a sputtering model (previously adapted to describe the sputtering of two-component targets and layered-inhomogeneous surfaces), based on two sputtering mechanisms, which allows to analyze the obtained dependencies. Theoretical calculations of the total yields sputtering by helium ions bombardment of the surface layers of titanium and tungsten modified with
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5

Yan, Li, Ping-Yang Wang, Yang-Hua Ou, and Xiao-Lu Kang. "Numerical Study of Hall Thruster Plume and Sputtering Erosion." Journal of Applied Mathematics 2012 (2012): 1–16. http://dx.doi.org/10.1155/2012/327021.

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Potential sputtering erosion caused by the interactions between spacecraft and plasma plume of Hall thrusters is a concern for electric propulsion. In this study, calculation model of Hall thruster’s plume and sputtering erosion is presented. The model is based on three dimensional hybrid particle-in-cell and direct simulation Monte Carlo method (PIC/DSMC method) which is integrated with plume-wall sputtering yield model. For low-energy heavy-ion sputtering in Hall thruster plume, the Matsunami formula for the normal incidence sputtering yield and the Yamamura angular dependence of sputtering
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6

Aumayr, Friedrich, and Hannspeter Winter. "Potential sputtering." Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences 362, no. 1814 (2003): 77–102. http://dx.doi.org/10.1098/rsta.2003.1300.

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7

Rossnagel, Stephen M. "Magnetron sputtering." Journal of Vacuum Science & Technology A 38, no. 6 (2020): 060805. http://dx.doi.org/10.1116/6.0000594.

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8

Eckstein, W. "Sputtering yields." Vacuum 82, no. 9 (2008): 930–34. http://dx.doi.org/10.1016/j.vacuum.2007.12.004.

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9

Shimizu, Ryuichi. "Preferential sputtering." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 18, no. 1-6 (1986): 486–95. http://dx.doi.org/10.1016/s0168-583x(86)80074-x.

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10

"Sputtering." Metal Finishing 93, no. 12 (1995): 71. http://dx.doi.org/10.1016/0026-0576(95)92473-6.

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11

Hoshi, Y., and M. Naoe. "Differences between Sputtering Methods in The Formation of Amorphous Magnetic Alloy Films." MRS Proceedings 58 (1985). http://dx.doi.org/10.1557/proc-58-75.

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ABSTRACTFe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum
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12

Liu, Shuangjie, Xingwang Li, Yongping Hao, Xing Li, and Fengli Liu. "Effect of magnetron sputtering process parameters on the conductivity of thin metal film." AIP Advances 13, no. 9 (2023). http://dx.doi.org/10.1063/5.0170746.

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This paper focuses on the effect of magnetron sputtering process parameters on the performance of thin metal film. Copper–tin alloy metal film was deposited on both sides of the PVDF film using direct current magnetron sputtering technology, and the effects of different working pressures, sputtering powers, sputtering times, and argon flow rates on the uniformity, deposition rate, and electrical conductivity of the metal film were studied separately. The main and minor factors affecting the conductivity of the metal film were determined by multiple linear regression, and the process parameters
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13

"Sputtering targeted." Materials Today 9, no. 12 (2006): 69. http://dx.doi.org/10.1016/s1369-7021(06)71765-5.

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14

"Sputtering targets." Metal Finishing 97, no. 7 (1999): 66. http://dx.doi.org/10.1016/s0026-0576(00)80648-0.

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15

"Sputtering system." Metal Finishing 97, no. 7 (1999): 66. http://dx.doi.org/10.1016/s0026-0576(00)80655-8.

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16

"Sputtering material." Metal Finishing 97, no. 7 (1999): 67. http://dx.doi.org/10.1016/s0026-0576(00)80657-1.

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17

"Sputtering device." Metal Finishing 97, no. 7 (1999): 70–71. http://dx.doi.org/10.1016/s0026-0576(00)80669-8.

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18

"Sputtering apparatus." Metal Finishing 97, no. 10 (1999): 72. http://dx.doi.org/10.1016/s0026-0576(00)81044-2.

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19

"Sputtering target." Metal Finishing 97, no. 12 (1999): 81. http://dx.doi.org/10.1016/s0026-0576(00)81225-8.

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20

"Sputtering target." Metal Finishing 98, no. 3 (2000): 86. http://dx.doi.org/10.1016/s0026-0576(00)81571-8.

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21

"Sputtering target." Metal Finishing 98, no. 4 (2000): 88. http://dx.doi.org/10.1016/s0026-0576(00)81682-7.

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22

"Sputtering apparatus." Metal Finishing 98, no. 4 (2000): 88. http://dx.doi.org/10.1016/s0026-0576(00)81683-9.

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23

"Sputtering cathodes." Metal Finishing 97, no. 11 (1999): 76–77. http://dx.doi.org/10.1016/s0026-0576(00)82181-9.

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24

"Sputtering apparatus." Metal Finishing 97, no. 11 (1999): 90. http://dx.doi.org/10.1016/s0026-0576(00)82239-4.

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25

"Sputtering apparatus." Metal Finishing 97, no. 11 (1999): 110. http://dx.doi.org/10.1016/s0026-0576(00)82306-5.

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26

"Sputtering apparatus." Metal Finishing 97, no. 11 (1999): 110–11. http://dx.doi.org/10.1016/s0026-0576(00)82308-9.

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27

"Sputtering process." Metal Finishing 98, no. 7 (2000): 73. http://dx.doi.org/10.1016/s0026-0576(00)82410-1.

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28

"Sputtering apparatus." Metal Finishing 98, no. 7 (2000): 75. http://dx.doi.org/10.1016/s0026-0576(00)82418-6.

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29

"Sputtering apparatus." Metal Finishing 98, no. 7 (2000): 78. http://dx.doi.org/10.1016/s0026-0576(00)82433-2.

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30

"Sputtering cathodes." Metal Finishing 98, no. 11 (2000): 85. http://dx.doi.org/10.1016/s0026-0576(00)83582-5.

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31

"Sputtering targets." Metal Finishing 98, no. 11 (2000): 109. http://dx.doi.org/10.1016/s0026-0576(00)83672-7.

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32

"Sputtering apparatus." Metal Finishing 97, no. 6 (1999): 165. http://dx.doi.org/10.1016/s0026-0576(00)84006-4.

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33

"Sputtering target." Metal Finishing 98, no. 12 (2000): 82. http://dx.doi.org/10.1016/s0026-0576(01)80102-1.

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34

"Sputtering system." Metal Finishing 97, no. 9 (1999): 119. http://dx.doi.org/10.1016/s0026-0576(01)80493-1.

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35

"Sputtering device." Metal Finishing 99, no. 1 (2001): 108. http://dx.doi.org/10.1016/s0026-0576(01)80649-8.

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36

"Sputtering apparatus." Metal Finishing 99, no. 1 (2001): 108–9. http://dx.doi.org/10.1016/s0026-0576(01)80650-4.

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37

"Sputtering device." Metal Finishing 99, no. 1 (2001): 118. http://dx.doi.org/10.1016/s0026-0576(01)80705-4.

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38

"Sputtering apparatus." Metal Finishing 99, no. 1 (2001): 118. http://dx.doi.org/10.1016/s0026-0576(01)80707-8.

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39

"Sputtering apparatus." Metal Finishing 99, no. 5 (2001): 87. http://dx.doi.org/10.1016/s0026-0576(01)80890-4.

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40

"Sputtering target." Metal Finishing 99, no. 3 (2001): 87. http://dx.doi.org/10.1016/s0026-0576(01)80967-3.

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41

"Sputtering apparatus." Metal Finishing 99, no. 2 (2001): 120–21. http://dx.doi.org/10.1016/s0026-0576(01)81075-8.

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42

"Sputtering apparatus." Metal Finishing 99, no. 2 (2001): 121. http://dx.doi.org/10.1016/s0026-0576(01)81080-1.

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43

"Sputtering apparatus." Metal Finishing 99, no. 9 (2001): 109. http://dx.doi.org/10.1016/s0026-0576(01)81537-3.

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44

"Sputtering apparatus." Metal Finishing 99, no. 9 (2001): 114. http://dx.doi.org/10.1016/s0026-0576(01)81557-9.

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45

"Sputtering target." Metal Finishing 99, no. 9 (2001): 114. http://dx.doi.org/10.1016/s0026-0576(01)81558-0.

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46

"Sputtering cathode." Metal Finishing 99, no. 11 (2001): 94. http://dx.doi.org/10.1016/s0026-0576(01)81673-1.

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47

"Sputtering device." Metal Finishing 99, no. 12 (2001): 59–60. http://dx.doi.org/10.1016/s0026-0576(01)81776-1.

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48

"Sputtering method." Metal Finishing 99, no. 12 (2001): 63. http://dx.doi.org/10.1016/s0026-0576(01)81798-0.

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49

"Sputtering targets." Metal Finishing 94, no. 5 (1996): 38. http://dx.doi.org/10.1016/s0026-0576(96)80014-6.

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50

"Sputtering target." Metal Finishing 94, no. 10 (1996): 80–81. http://dx.doi.org/10.1016/s0026-0576(96)91183-6.

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